A reverse-type perovskite anode interface modification material and application thereof

Abstract

This invention discloses an inverse perovskite anode interface modification material and its application, belonging to the field of perovskite solar cell technology. The interface modification material includes thiomalic acid, 2-amino-3-sulfonylpropionic acid, DL-2-amino-3-phosphopropionic acid, dimercaptosuccinic acid, etc. The interface modification material contains two or more groups that interact with TCO (total organic carbon), and the material preferentially and directionally deposits in areas not covered by SAM (soil anode metallization layer). During the deposition process of this interface modification material, an alcohol-soluble solvent can partially dissolve and wash away aggregated SAM molecules, improving the coverage of SAM molecules and enhancing the hole extraction and transport capabilities of the SAM hole transport layer. The interface modification material of this invention contains groups that interact with perovskite, reducing the formation of cracks and pores at the perovskite buried interface, and reducing and passivating defects.

Description

Technical Field

[0001] This invention belongs to the field of perovskite solar cell technology, specifically relating to an inverted perovskite anode interface modification material and its application. Background Technology

[0002] In perovskite solar cells, the interface characteristics between the perovskite layer and the charge transport layer have a significant impact on the device's efficiency and stability. The bottom interface charge transport layer has a particularly significant influence, directly affecting charge transport behavior at the interface and playing a crucial role in the deposition quality of the perovskite thin film.

[0003] In recent years, some self-assembled monolayer (SAM) materials containing carbazole phosphonic acid groups (such as MeO-2PACz, Me-4PACz, and 2PACz) have been used as hole transport layer materials in inverted perovskite solar cells due to their suitable energy level arrangement. However, these molecules typically have an amphiphilic structure and are prone to aggregation during self-assembly, leading to incomplete SAM coverage on the substrate. Furthermore, because the hydrophobic carbazole groups in SAM face outwards and the molecule lacks other functional groups that can form strong interactions with perovskite, the perovskite precursor solution exhibits poor wettability on the substrate, resulting in incomplete perovskite film coverage and poor crystallinity. These problems also limit the carrier transport performance of the SAM / perovskite interface.

[0004] To address the issues of insufficient coverage and poor perovskite wettability in the SAM layer, two methods have been developed within the industry:

[0005] The first method involves doping the SAM layer, a simple and widely applicable approach. However, the introduction of dopant molecules may affect the ordered self-assembly process of the SAM, causing sites that should be occupied by the SAM to be replaced by dopant molecules. This can prevent the carrier extraction performance at these sites from reaching its optimal level, resulting in additional energy loss, as described in patent CN202511772777.4.

[0006] The second method involves modifying SAM, typically using materials that can interact with SAM molecules, such as through π-π interactions (Adv. Mater., 2025, 37, e05597) or by forming hydrogen bonds (F and -OH) (Adv. EnergyMater., 2025, 15, 2501556). These intermolecular interactions can induce rearrangement of some SAM molecules during deposition, thus mitigating SAM aggregation to some extent. However, this method does not fundamentally solve the problem of incomplete coverage: deep vacancies formed by aggregation and defects caused by insufficient surrounding SAM molecules remain difficult to completely fill or effectively cover using this method. Summary of the Invention

[0007] The purpose of this section is to outline some aspects of the embodiments of the present invention and to briefly describe some preferred embodiments.

[0008] In view of the problems existing in the above and / or prior art, the present invention is proposed to solve the following technical problems:

[0009] Solving the problem of SAM aggregation on TCO surfaces;

[0010] Solve the problem that SAM cannot fully cover TCO;

[0011] To address the problem of poor wettability of perovskite precursor solutions on substrates;

[0012] This addresses the issue of carrier recombination caused by defects at the perovskite buried interface, as well as leakage caused by incomplete SAM or perovskite coverage.

[0013] Therefore, the purpose of this invention is to overcome the shortcomings of the prior art and provide an inverse perovskite anode interface modification material.

[0014] To solve the above-mentioned technical problems, the present invention provides the following technical solution: an inverse perovskite anode interface modification material, characterized in that: the interface modification material includes thiomalic acid, 2-amino-3-sulfonylpropionic acid, DL-2-amino-3-phosphopropionic acid and dimercaptosuccinic acid;

[0015] The interface modification material contains two or more anchoring groups that interact with the transparent conductive substrate (TCO), and at least one group that can interact with perovskite, wherein the anchoring groups include carboxyl groups, sulfonic acid groups, phosphate groups, and boric acid groups.

[0016] The interface modification material inhibits SAM agglomeration, fills areas not covered by SAM, reduces the generation of cracks and pores at the perovskite buried interface, and passivates interface defects.

[0017] Another objective of this invention is to overcome the shortcomings of the prior art and provide an application of an inverse perovskite anode interface modification material in the fabrication of perovskite solar cells.

[0018] As a preferred embodiment of the application described in this invention, it includes:

[0019] Clean the TCO glass to obtain the TCO substrate;

[0020] A SAM layer was deposited on a TCO substrate and annealed at 80-150℃ for 5-30 min to obtain a TCO / SAM layer.

[0021] Anode interface modification materials were deposited on TCO / SAM using spin coating, blade coating, and slot coating methods.

[0022] After the modification material is deposited, the substrate is annealed. The material effectively fills the area not covered by SAM, and the thickness on SAM is between 0.1 nm and 10 nm.

[0023] Perovskite films were deposited on modified SAM using a solution method and then annealed. The thickness of the perovskite films was between 300 nm and 1000 nm.

[0024] One or more layers of charge transport layer or buffer layer are deposited on the surface of perovskite;

[0025] Device fabrication is completed by depositing one or more layers of transparent, metallic, or carbon electrodes.

[0026] In a preferred embodiment of the application described in this invention, the deposition of the anodic interface modification material involves using an alcohol solution containing the anodic interface modification material during the deposition process, with the concentration of the solution between 0.1 mg / ml and 10 mg / ml.

[0027] In a preferred embodiment of the application described in this invention, the alcohol comprises methanol, ethanol, and isopropanol.

[0028] As a preferred embodiment of the application described in this invention, the deposited SAM layer comprises a single material or a mixture of 2PACz, 4PACz, Me-4PACz, and Me-2PACz.

[0029] In a preferred embodiment of the application described in this invention, the substrate is subjected to annealing treatment, wherein the annealing temperature is between 50°C and 200°C, and the annealing time is between 5 and 60 minutes.

[0030] In a preferred embodiment of the application described in this invention, the deposited perovskite film contains an A-site organic cation, MA. + FA + and Cs + At least one of them; the B-site cation is Pb 2+ Sn 2+ Bi 2+ Cu 2+ and Ag + At least one of them; the X position is I - ,Br - and Cl - At least one of them;

[0031] Solvents include dimethyl sulfoxide, dimethylformamide, and N-methylpyrrolidone.

[0032] In a preferred embodiment of the application described in this invention, the perovskite film is annealed at a temperature of 80~200℃ for 5~60 min.

[0033] As a preferred embodiment of the application described in this invention, the charge transport layer includes C 60 SnO2; the buffer layer includes BCP and LiF;

[0034] Deposited transparent electrodes include ITO and IZO, while metallic electrodes include Ag, Au, and Cu.

[0035] Beneficial effects of this invention:

[0036] (1) During the deposition process of the interface modification material of the present invention, the alcohol-soluble solvent can partially dissolve and wash away the aggregated SAM molecules, improve the coverage of SAM molecules, and enhance the hole extraction and transport capabilities of the SAM hole transport layer; the interface modification material contains groups that interact with perovskite, which reduces the generation of cracks and pores at the perovskite buried interface, and reduces and passivates defects.

[0037] (2) The interface modification material of the present invention contains two or more TCO anchoring groups, which can make the material preferentially and selectively fill the area not covered by SAM molecules (including deep vacancy areas formed by aggregation and vacancy areas caused by insufficient surrounding SAM molecules), and the anchoring probability is high, the gap filling ability is strong, greatly reducing the recombination of charge carriers at this point and reducing leakage current.

[0038] (3) The groups that can interact with perovskite and the groups that are not anchored to TCO (which are hydrophilic) in the interface modification material of the present invention can improve the wettability of the perovskite precursor solution on the substrate, regulate the crystallization of perovskite, avoid the generation of buried interface pores and cracks, thereby reducing and passivating defects and reducing non-radiative recombination. Attached Figure Description

[0039] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0040] Figure 1 This is a process flow diagram in an embodiment of the present invention.

[0041] Figure 2This is a contact angle test diagram of the perovskite precursor solution on the substrate in an embodiment of the present invention.

[0042] Figure 3 This is a SEM image of the buried interface of the perovskite film (after peeling) in an embodiment of the present invention.

[0043] Figure 4 This is a SEM image of a perovskite cross-section in an embodiment of the present invention.

[0044] Figure 5 The XRD pattern of the perovskite thin film in this embodiment of the invention is shown.

[0045] Figure 6 This is a PL spectrum measured from the glass surface in an embodiment of the present invention.

[0046] Figure 7 This is a PL spectrum measured from the perovskite surface in an embodiment of the present invention.

[0047] Figure 8 The image shows the Sn 3d XPS pattern of the substrate TCO in this embodiment of the invention.

[0048] Figure 9 The image shows the Pb 4f XPS spectrum of the perovskite thin film in this embodiment of the invention.

[0049] Figure 10 This is a schematic diagram of the device structure of a perovskite solar cell in an embodiment of the present invention.

[0050] Figure 11 This is a JV characteristic curve of a perovskite solar cell in an embodiment of the present invention. Detailed Implementation

[0051] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the examples in the specification.

[0052] Thiomalic acid (mercaptosuccinic acid), 2-amino-3-sulfonopropionic acid, DL-2-amino-3-phosphopropionic acid, and dimercaptosuccinic acid in this invention are all commercially available products with the following structural formulas:

[0053]

[0054] Example 1

[0055] (1) Clean the FTO glass by sequentially using glass cleaner, deionized water, and ethanol for 15 min of ultrasonic cleaning, followed by UV-ozone cleaning for 10 min.

[0056] (2) A monolayer hole transport layer of Me-4PACz was deposited on the cleaned FTO glass by spin coating;

[0057] The concentration of Me-4PACz solution was 0.5 mg / ml, the solvent was ethanol, the spin coating parameters were 5000 rpm for 20 s, followed by annealing at 120℃ for 5~30 min, and the film thickness was ≤10 nm (monolayer).

[0058] (3) Spin-coating a thin film of thiomalic acid TMA onto the Me-4PACz hole transport layer;

[0059] The TMA solution concentration was 3 mg / ml, the solvent was ethanol, and the spin coating speed was 5000 rpm.

[0060] (4) The obtained TMA film is annealed at 80°C for 5 min. During spin coating and annealing, TMA can be anchored to the uncovered FTO, fill the SAM gaps, improve the uniformity of the transport layer coverage, and improve wettability. The thickness of the TMA film is ≤10 nm.

[0061] (5) A perovskite film with a thickness of about 500 nm was deposited on the modified SAM by spin coating.

[0062] Preparation method of perovskite precursor solution: 247.6 mg FAI, 12.7 mg MAI, 20.8 mg CsI, 737.6 mg PbI2, 22.2 mg PbCl2 and 5.4 mg MACl were dissolved in 1 mL of a mixed solution of DMSO and DMF (volume ratio DMF:DMSO = 4:1).

[0063] Spin-coating process for preparing perovskite thin films: The precursor solution is deposited on the TMA film using spin-coating processes at 1000 rpm for 5 s and 4000 rpm for 30 s. Extraction is performed using chlorobenzene as an anti-solvent 5 s before the end of spin-coating.

[0064] (6) The obtained perovskite film is annealed at 100℃ for 40 min. During this process, TMA molecules passivate the defects at the perovskite bottom interface, improve the interface contact, and improve the film quality.

[0065] (7) A 20 nm layer of C was deposited on the perovskite film by vacuum evaporation. 60 8 nm BCP, 100 nm Ag metal electrode; the vacuum degree of the cavity during evaporation is 10 -5 Torr, with an evaporation rate of 0.1 Å / s.

[0066] A schematic diagram illustrating the mechanism by which anodic interface modification reduces SAM aggregation, effectively fills uncovered areas, and passivates the perovskite substrate interface is shown below. Figure 1 .

[0067] The contact angle of the perovskite precursor solution (prepared by the same method as (5)) on the substrate is shown in the figure. Figure 2 As can be seen, the contact angle is significantly reduced, and the wettability is improved.

[0068] See the SEM image of the exfoliated perovskite subsurface interface. Figure 3 It can be seen that the buried interface has become smoother, and the pores and cracks have been significantly reduced; see the SEM image of the perovskite cross-section. Figure 4 The number of holes and gaps at the buried interface is reduced.

[0069] See perovskite thin film XRD pattern. Figure 5 It can be seen that, compared with the conventional method, the peak of PbI2 in the perovskite film prepared after anodic interface modification is significantly weakened, and the peak intensity of the (100) crystal plane is enhanced, indicating that the crystallinity of the perovskite is enhanced and the perovskite is preferentially oriented along the (100) crystal plane.

[0070] PL patterns of perovskite thin films measured from the glass surface and the perovskite surface ( Figure 6 and Figure 7 (Excitation wavelength 450 nm) It can be seen that: the increased PL peak intensity measured on the perovskite surface indicates that the perovskite crystal quality is improved and non-radiative recombination is reduced; while the decreased PL peak intensity on the glass surface indicates that the hole transport performance at the anode interface is improved.

[0071] See Sn 3d XPS pattern of TCO substrate. Figure 8 The Sn 3d orbital electrons shift towards lower binding energies, indicating that the TMA molecule is chemically anchored to the FTO substrate.

[0072] See the Pb 4f XPS pattern of the perovskite thin film. Figure 9 The shift of Pb 4f orbital electrons toward lower binding energy indicates that TMA molecules chemically interact with uncoordinated Pb²⁺ at the perovskite interface, thus achieving passivation of interface defects.

[0073] See the schematic diagram of the device structure. Figure 10 ;

[0074] The JV characteristic curves of the prepared perovskite solar cells are shown in the figure. Figure 11 It can be seen that the Voc and FF of the wide-bandgap perovskite solar cell are significantly improved after TMA modification.

[0075] Example 2

[0076] (1) Clean the FTO glass by sequentially using glass cleaner, deionized water, and ethanol for 15 min of ultrasonic cleaning, followed by UV-ozone cleaning for 10 min.

[0077] (2) A monolayer hole transport layer of Me-4PACz was deposited on the cleaned FTO glass by spin coating;

[0078] The concentration of Me-4PACz solution was 0.5 mg / ml, the solvent was ethanol, the spin coating parameters were 5000 rpm for 20 s, followed by annealing at 120℃ for 5~30 min, and the film thickness was ≤10 nm (monolayer).

[0079] (3) Spin-coating a thin film of 2-amino-3-sulfopropionic acid onto the Me-4PACz hole transport layer;

[0080] The solution concentration was 3 mg / ml, the solvent was ethanol, and the spin coating speed was 5000 rpm.

[0081] (4) The obtained film is annealed at 100°C for 5 min. During spin coating and annealing, 2-amino-3-sulfopropionic acid can anchor to the uncovered FTO, fill the SAM voids, and improve the uniformity of the transport layer coverage.

[0082] (5) A perovskite film was deposited on the modified SAM by spin coating;

[0083] Among them, the spin-coating method for preparing perovskite thin films involves depositing the precursor solution onto the film layer using spin-coating processes at 1000 rpm for 5 seconds and 4000 rpm for 30 seconds. Extraction is performed using chlorobenzene as an anti-solvent 5 seconds before the end of spin-coating.

[0084] (6) The obtained perovskite film is annealed at 100℃ for 40 min. During this process, 2-amino-3-sulfopropionic acid molecules passivate the defects at the perovskite bottom interface, improve the interface contact, and improve the film quality.

[0085] (7) A 20 nm layer of C was deposited on the perovskite film by vacuum evaporation. 60 The structure consists of an 8 nm BCP and a 100 nm Ag metal electrode; the vacuum level of the cavity during vapor deposition is 10⁻⁵ Torr, and the evaporation rate is 0.1 Å / s.

[0086] In this embodiment, 2-amino-3-sulfonylpropionic acid, due to the presence of sulfonic acid and carboxyl groups, can interact with the hydroxyl groups on the uncovered FTO, thus preferentially filling SAM voids and improving the uniformity of the transport layer coverage; the presence of amino groups in the molecular structure can interact with Pb. 2+ Interaction, and also with I- ,Br - Hydrogen bonds are formed, thereby improving the wettability of perovskite on the substrate, regulating crystallization, and reducing and passivating defects.

[0087] Example 3

[0088] (1) Clean the FTO glass by sequentially using glass cleaner, deionized water, and ethanol for 15 min of ultrasonic cleaning, followed by UV-ozone cleaning for 10 min.

[0089] (2) A hole transport layer of Me-4PACz was deposited on the cleaned FTO glass by spin coating. The concentration of Me-4PACz solution was 0.5 mg / ml, the solvent was ethanol, the spin coating parameters were 5000 rpm and 20 s, followed by annealing at 120℃ for 5~30 min, and the film thickness was ≤10 nm (monolayer).

[0090] (3) A thin film of dimercaptosuccinic acid was spin-coated on the Me-4PACz hole transport layer; wherein the solution concentration was 2 mg / ml, the solvent was ethanol, and the spin-coating speed was 5000 rpm.

[0091] (4) The obtained dimercaptosuccinic acid film is annealed at 80°C for 5 min. During spin coating and annealing, dimercaptosuccinic acid can be anchored to the uncovered FTO, fill the SAM gaps, and improve the uniformity of the transport layer coverage.

[0092] (5) A perovskite film is deposited on the modified SAM by spin coating. The process of preparing the perovskite film by spin coating is as follows: the precursor solution is deposited on the film by spin coating at 1000 rpm for 5 s, 4000 rpm for 30 s, and chlorobenzene is used for extraction in the 5th second before the end of spin coating.

[0093] (6) The obtained perovskite film is annealed at 100℃ for 40 min. During this process, the molecules passivate the defects at the perovskite bottom interface, improve the interface contact, and improve the film quality.

[0094] (7) A 20 nm layer of C was deposited on the perovskite film by vacuum evaporation. 60 The device consists of an 8 nm BCP and a 100 nm Ag metal electrode; the vacuum level of the cavity during vapor deposition is 10⁻⁵ Torr, and the evaporation rate is 0.1 Å / s.

[0095] In Example 3, the two carboxyl groups in dimercaptosuccinic acid have the same function as the two carboxyl groups in Example 1, preferentially anchoring the modified material in regions not covered by SAM. The presence of the two thiol groups in this material can enhance the binding of Pb in perovskite. 2+The probability of interaction regulates perovskite crystallization, passivates defects, and reduces non-radiative recombination.

[0096] Example 4

[0097] (1) Clean the FTO glass by sequentially using glass cleaner, deionized water, and ethanol for 15 min of ultrasonic cleaning, followed by UV-ozone cleaning for 10 min.

[0098] (2) A 4PACz monolayer hole transport layer was deposited on the cleaned FTO glass by spin coating. The concentration of the 4PACz solution was 0.3 mg / ml, the solvent was ethanol, the spin coating parameters were 3000 rpm for 20 s, followed by annealing at 100℃ for 20 min, and the film thickness was ≤10 nm (monolayer).

[0099] (3) A thin film of DL-2-amino-3-phosphopropionic acid was spin-coated on the 4PACz hole transport layer; wherein the solution concentration was 2 mg / ml, the solvent was ethanol, and the spin-coating speed was 6000 rpm.

[0100] (4) The obtained DL-2-amino-3-phosphopropionic acid film was annealed at 80°C for 5 min. During spin coating and annealing, DL-2-amino-3-phosphopropionic acid can be anchored to the uncovered FTO, fill the 4PACz gap, and improve the uniformity of the transport layer coverage.

[0101] (5) A perovskite film was deposited on the modified 4PACz film by spin coating. The perovskite precursor solution was prepared by dissolving 247.6 mg FAI, 12.7 mg MAI, 20.8 mg CsI, 737.6 mg PbI2, 22.2 mg PbCl2 and 5.4 mg MACl in a mixed solution of 1 mL DMSO and DMF (volume ratio DMF:DMSO=4:1).

[0102] Among them, the spin-coating method for preparing perovskite thin films involves depositing the precursor solution onto the film layer using spin-coating processes at 1000 rpm for 5 seconds and 4000 rpm for 30 seconds. Extraction is performed using chlorobenzene as an anti-solvent 5 seconds before the end of spin-coating.

[0103] (6) The obtained perovskite film is annealed at 100℃ for 40 min. During this process, the molecules passivate the defects at the perovskite bottom interface, improve the interface contact, and improve the film quality.

[0104] (7) A 20 nm layer of C was deposited on the perovskite film by vacuum evaporation. 60The device consists of an 8 nm BCP and a 100 nm Ag metal electrode; the vacuum level of the cavity during vapor deposition is 10⁻⁵ Torr, and the evaporation rate is 0.1 Å / s.

[0105] In Example 4, the spin-coating process of the DL-2-amino-3-phosphopropionic acid solution dissolved and washed away some of the aggregated 4PACz, thereby improving the uniformity of the hole transport layer. Simultaneously, the phosphate and carboxylic acid groups in the molecule preferentially anchor it in areas not covered by 4PACz, and the dual-anchoring structure increases the probability of void filling, minimizing leakage at the anodic interface. Furthermore, the amino groups in the molecule can react with Pb... 2+ Interaction, and also with I - ,Br - Hydrogen bonds are formed, which further improves the wettability of perovskite on the substrate, regulates crystallization, and reduces and passivates defects.

[0106] Comparative Example 1

[0107] The difference between Comparative Example 1 and Example 1 is as follows:

[0108] Steps (3) and (4) were not performed, but all other steps were the same as in Example 1, and a perovskite solar cell was prepared.

[0109] The perovskite solar cells prepared in Example 1 and Comparative Example 1 were placed in AM 1.5G (100 mW / cm²). 2 The current-voltage curve of the cell was tested using a digital source meter under a solar simulator to obtain the photovoltaic parameters of the cell at 25°C, and the open-circuit voltage V was obtained. OC Short-circuit current J SC The values ​​of fill factor FF and photoelectric conversion efficiency PCE are shown in Table 1.

[0110] Table 1

[0111] It can be seen that, compared with the ordinary method, the device's V OC J SC In particular, the FF values ​​have been improved, thus significantly enhancing the photoelectric conversion efficiency of the device.

[0112] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the scope of the present invention.

Claims

1. A reverse perovskite anode interface modification material, characterized in that: The interface modification materials include thiomalic acid, 2-amino-3-sulfopropionic acid, DL-2-amino-3-phosphopropionic acid, and dimercaptosuccinic acid. The interface modification material contains two or more anchoring groups that interact with the transparent conductive substrate (TCO), and at least one group that can interact with perovskite, wherein the anchoring groups include carboxyl groups, sulfonic acid groups, phosphate groups, and boric acid groups. The interface modification material inhibits SAM agglomeration, fills areas not covered by SAM, reduces the generation of cracks and pores at the perovskite buried interface, and passivates interface defects.

2. The application of the inverse perovskite anode interface modification material according to claim 1 in the preparation of perovskite solar cells.

3. The application as described in claim 2, characterized in that: include, Clean the TCO glass to obtain the TCO substrate; A SAM layer was deposited on a TCO substrate and annealed at 80-150℃ for 5-30 min to obtain a TCO / SAM layer. Anode interface modification materials were deposited on TCO / SAM using spin coating, blade coating, and slot coating methods. After the modification material is deposited, the substrate is annealed. The material effectively fills the area not covered by SAM, and the thickness on SAM is between 0.1 nm and 10 nm. Perovskite films were deposited on modified SAM using a solution method and then annealed. The thickness of the perovskite films was between 300 nm and 1000 nm. One or more layers of charge transport layer or buffer layer are deposited on the surface of perovskite; Device fabrication is completed by depositing one or more layers of transparent, metallic, or carbon electrodes.

4. The application as described in claim 3, characterized in that: The deposition of the anode interface modification material involves using an alcohol solution containing the anode interface modification material during the deposition process, with a concentration between 0.1 mg / ml and 10 mg / ml.

5. The application as described in claim 4, characterized in that: The alcohols include methanol, ethanol, and isopropanol.

6. The application as described in claim 3, characterized in that: The deposited SAM layer, wherein the SAM layer material includes 2PACz, 4PACz, Me-4PACz, Me-2PACz, or a mixture thereof.

7. The application as described in claim 3, characterized in that: The substrate is subjected to annealing treatment, wherein the annealing temperature is between 50℃ and 200℃ and the annealing time is 5 to 60 min.

8. The application as described in claim 3, characterized in that: The deposited perovskite film, wherein the organic cation at the A-site of the perovskite is MA. + FA + and Cs + At least one of them; the B-site cation is Pb 2+ Sn 2+ Bi 3+ Cu 2+ and Ag + At least one of them; X is I - ,Br - and Cl - At least one of them; Solvents include dimethyl sulfoxide, dimethylformamide, and N-methylpyrrolidone.

9. The application as described in claim 3, characterized in that: The perovskite film is annealed at a temperature of 80~200℃ for 5~60 min.

10. The application as described in claim 3, characterized in that: The charge transport layer includes C 60 SnO2; the buffer layer includes BCP and LiF; Deposited transparent electrodes include ITO and IZO, while metallic electrodes include Ag, Au, and Cu.

Images