A method of manufacturing a semiconductor device
By forming openings in the mandrel layer and sidewall layers on the sidewalls, and utilizing material difference etching technology, the problem of inaccurate end-to-end cut-off size control of metal lines was solved, achieving precise pattern definition and improving device yield.
CN122373784APending Publication Date: 2026-07-10SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHENZHEN PENGXIN MICRO INTEGRATED CIRCUIT MFG CO LTD
- Filing Date
- 2025-01-03
- Publication Date
- 2026-07-10
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Figure CN122373784A_ABST
Abstract
A method for manufacturing a semiconductor device includes: providing an interlayer dielectric layer, with a core layer formed above the interlayer dielectric layer; etching the core layer to form an opening penetrating the core layer; forming sidewall layers on sidewalls on both sides of the opening along a first direction; forming a fill layer between the sidewall layers to fill the opening, the fill layer being made of a different material than the sidewall layers; etching the core layer and sidewall layers on both sides of the fill layer along the first direction to form a first metal line pattern truncated by the fill layer in the core layer, the first metal line pattern extending along the first direction; and etching the interlayer dielectric layer based on the core layer to form a first trench having a truncated region. This invention enables the achievement of smaller end-to-end truncation dimensions for metal lines.
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