High speed, high efficiency sic power module

By using silicon carbide switching components and an aluminum nitride substrate, the problem of low switching frequency in existing power converter modules is solved, achieving high-frequency, high-efficiency, and high-power-density operation, while reducing the size and cost of filter components.

CN122373830APending Publication Date: 2026-07-10WOLF SEMICON CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
WOLF SEMICON CORP
Filing Date
2016-03-11
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

When existing power converter modules use silicon switching components, the low switching frequency results in large size, high cost, and low efficiency of the filtering components, making it difficult to achieve high-frequency and high-power-density efficient operation.

Method used

An active metal brazed substrate employing silicon carbide switching components and aluminum nitride substrates achieves high-frequency operation by minimizing power switching and gate control path lengths, combined with a high thermal conductivity substrate material, improving heat dissipation and reducing stray inductance.

Benefits of technology

It achieves high efficiency and high power density operation at high switching frequencies, reduces the size and cost of filter components, and improves system compatibility and reliability.

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Abstract

This application relates to high-speed, high-efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite to the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The housing is disposed on the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the heat dissipation of the power converter module can be significantly improved while maintaining the structural integrity of the power converter module.
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Citation Information

Patent Citations

  • High speed, high efficiency sic power module

    CN112103272B