Electroplated magnetic material for coupling on-axis magnetic integrated inductors

Abstract

Embodiments disclosed herein can include an apparatus having a substrate. In one embodiment, an opening is formed through the substrate. In one embodiment, a layer is disposed on a sidewall of the opening, and the layer includes a first magnetic material, and an insert is in the opening. In one embodiment, the insert includes a second magnetic material different from the first magnetic material. In one embodiment, a first via is through the insert, and a second via can be formed through the insert.

Description

Background Technology

[0001] In semiconductor packaging applications, voltage regulators are used to improve power delivery performance. Fully integrated voltage regulators allow higher voltages and lower currents to flow from the motherboard through the substrate. This significantly reduces load line losses and improves power delivery efficiency. Inductors are a key component in this voltage regulator design. Currently, inductors are included in the core of the package substrate. However, as the core continues to shrink, inductors cannot maintain a corresponding area reduction while still retaining the required inductance. In other words, existing integrated inductor technology does not have the ability to scale to higher inductance densities. Attached Figure Description

[0002] Figure 1A This is a plan view of the coupled inductor in the core according to an embodiment.

[0003] Figure 1B According to the embodiments Figure 1A The diagram shows a cross-sectional view of the coupled inductor.

[0004] Figures 2A-2K This is an illustration depicting a process for forming a coupled inductor in a core according to an embodiment.

[0005] Figure 3 This is a cross-sectional view of a pair of coaxial inductors with electroplated magnetic housings according to an embodiment.

[0006] Figure 4A This is a plan view of a coupled inductor with a dielectric-filled through-hole in the core according to an embodiment.

[0007] Figure 4B According to the embodiments Figure 4A The diagram shows a cross-sectional view of the coupled inductor.

[0008] Figures 5A-5C This is a cross-sectional illustration depicting a process for forming a coupled inductor with a dielectric-filled through-hole according to an embodiment.

[0009] Figure 6 This is a flowchart depicting a process for forming a coupled coaxial inductor according to an embodiment.

[0010] Figure 7 This is a cross-sectional view of an electronic system having a coupled coaxial inductor within the core of a package substrate, according to an embodiment.

[0011] Figure 8 This is a schematic diagram of a computing device constructed according to an embodiment. Detailed Implementation

[0012] This document describes coupled coaxial inductor structures with electroplated external magnetic housings according to various embodiments. In the following description, terms commonly used by those skilled in the art are used to describe various aspects of exemplary implementations in order to convey the working substance of the exemplary implementations to others skilled in the art. However, it will be apparent to those skilled in the art that this disclosure can be practiced using only some of the described aspects. Specific quantities, materials, and configurations are set forth for purposes of explanation in order to provide a thorough understanding of the exemplary implementations. However, it will be apparent to those skilled in the art that this disclosure can be practiced without specific details. In other instances, well-known features have been omitted or simplified so as not to obscure the exemplary implementations.

[0013] The various operations are described sequentially as a plurality of discrete operations in a manner most conducive to understanding this disclosure; however, the order of description should not be construed as implying that these operations necessarily depend on the order. In particular, these operations are not necessarily to be performed in the order presented.

[0014] This document describes various embodiments or aspects of this disclosure. In some implementations, different embodiments are implemented independently. However, the embodiments are not limited to individually implemented embodiments. For example, two or more different embodiments may be combined to achieve a single device, process, structure, etc. In some cases, all aspects of various embodiments may be combined together. In other cases, a portion of a first embodiment may be combined with portions of one or more different embodiments. For example, a portion of a first embodiment may be combined with a portion of a second embodiment, or a portion of a first embodiment may be combined with portions of a second embodiment and a portion of a third embodiment.

[0015] As mentioned above, integrated inductor structures are used as voltage regulator solutions for power delivery in semiconductor packages. Existing integrated inductors have adopted a coaxial structure. For example, conductive vias can be surrounded by a magnetic housing. However, this coaxial structure is limited in terms of inductance density. As industry continues to expand to smaller package form factors (outline dimensions), this limited inductance density becomes problematic. For example, the area of ​​the package substrate can be reduced, and the thickness of the core of the package substrate can be reduced. This means that there is less area (area) available for placing the coaxial inductor structure, and the length of the coaxial inductor structure is reduced (due to the reduced core thickness). Therefore, designing integrated inductor structures that provide the necessary inductance for advanced packaging solutions becomes increasingly difficult.

[0016] Therefore, the embodiments disclosed herein may include coupled coaxial inductor solutions. The coupled coaxial inductor solutions described herein allow for additional reduction in inductor size and / or increase inductance while maintaining the same dimensions. That is, the embodiments described herein involve an overall increase in inductance density. This increase in inductance density is achieved at least in part by utilizing a shared magnetic region around adjacent inductor vias. Specifically, a single magnetic insert can fill a cavity, and a pair of conductive vias can extend through the magnetic insert. To further improve inductance, a high-permeability housing can be provided around the magnetic insert.

[0017] In one embodiment, the magnetic insert and the magnetic housing may comprise different magnetic materials. For example, the magnetic housing may be an electroplated magnetic material (PMM), and the magnetic insert may be a magnetic paste (MPM). PMM can have higher permeability and provide an overall increased inductance. MPM can fill larger cavities in a cost-effective manner (e.g., using a scraper-filling process) and can be patterned to form holes for through-holes. The combination of two different materials allows for coupling of the inductor, where the magnetic material is utilized more efficiently because a single magnetic insert can be used to surround two through-holes.

[0018] Now for reference Figure 1A and Figure 1B A plan view of a substrate 110 having an integrated coupled coaxial inductor 130 according to an embodiment is shown. Figure 1A ) and corresponding cross-sectional diagrams ( Figure 1B In one embodiment, substrate 110 may be the core of an encapsulation substrate. In some embodiments, the core may be an organic dielectric-based material, such as a fiber-reinforced dielectric material. In other embodiments, substrate 110 may be a glass core.

[0019] In the case of a substrate with a glass core, the glass core can be substantially entirely glass. The glass core can be a solid block comprising a glass material having an amorphous crystalline structure, and the solid glass core can also include various structures such as through-holes, cavities, channels, or other features filled with one or more other materials (e.g., metals, metal alloys, dielectric materials, etc.). Thus, the glass core can be distinguished from, for example, the "pre-impregnated" core or "FR4" core of a printed circuit board (PCB) substrate, which typically comprises glass fibers embedded in a resin-based organic material such as epoxy resin.

[0020] The glass core can have any suitable size. In a particular embodiment, the glass core can have a thickness of about 50 μm or greater. For example, the thickness of the glass core can be between about 50 μm and about 1.4 mm. However, smaller or larger thicknesses can also be used. The glass core can have an edge dimension (e.g., length, width, etc.) of about 10 mm or greater. For example, the edge dimension can be between about 10 mm and about 250 mm. However, larger or smaller edge dimensions can also be used. More generally, the area dimensions of the glass core (viewed from a top plan view) can be between about 10 mm × 10 mm and about 250 mm × 250 mm. In one embodiment, the glass core can have a first side perpendicular or orthogonal to the second side. In a more general embodiment, the glass core can include a rectangular prism volume having portions (e.g., through-holes) that have been removed and filled with other materials (e.g., metal, etc.).

[0021] The glass core may comprise a single, integral glass layer. In other embodiments, the glass core may comprise two or more discrete glass layers stacked on top of each other. The discrete glass layers may be configured to be in direct contact with each other, or the discrete glass layers may be mechanically coupled to each other by an adhesive or the like. Each discrete glass layer in the glass core may have a thickness of less than about 50 μm. For example, a discrete glass layer in the glass core may have a thickness between about 25 μm and about 50 μm. However, in some embodiments, the discrete glass layers may have a greater or lesser thickness. As used herein, “about” may refer to a range of values ​​within ten percent of the claimed value. For example, about 50 μm may refer to a range between 45 μm and 55 μm.

[0022] The glass core can be any suitable glass formulation that has the necessary mechanical robustness and compatibility with semiconductor packaging manufacturing and assembly processes. For example, the glass core can include aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, silicon dioxide, fused silica, etc. In some embodiments, the glass core can include one or more additives, such as, but not limited to, Al₂O₃, B₂O₃, MgO, CaO, SrO, BaO, SnO₂, Na₂O, K₂O, SrO, P₂O₃, ZrO₂, Li₂O, Ti, or Zn. More generally, the glass core can contain silicon and oxygen, and any one or more of aluminum, boron, magnesium, calcium, barium, tin, sodium, potassium, strontium, phosphorus, zirconium, lithium, titanium, or zinc. In one embodiment, the glass core can contain at least 23% (by weight) silicon and at least 26% (by weight) oxygen. In some embodiments, the glass core can further contain at least 5% (by weight) aluminum.

[0023] In one embodiment, the coupled coaxial inductor 130 may be vertically oriented. That is, the coupled coaxial inductor 130 may be formed in an opening extending from the bottom surface of the substrate 110 to the top surface of the substrate 110. The opening may have sidewalls 112. In the illustrated embodiment, the opening has an elongated shape with rounded ends. However, the opening may have any suitable shape. In one embodiment, the size of the opening may be selected to allow the formation of a coaxial inductor 130 with the desired inductance. For example, the length of the opening may be up to about 200 μm, up to about 500 μm, or up to about 1,000 μm. In a particular embodiment, the length of the opening may be between about 200 μm and about 500 μm. In an embodiment, the coupled coaxial inductor 130 may include a first magnetic material and a second magnetic material, wherein the first magnetic material is different from the second magnetic material.

[0024] In one embodiment, the magnetic housing 115 formed along the sidewall 112 of the opening through the substrate 110 may be a first magnetic material. The magnetic housing 115 may include a high permeability material. In some embodiments, the magnetic housing 115 may be PMM. For example, the magnetic housing 115 may include one or more of cobalt, iron, or nickel. Additives such as one or more of phosphorus, sulfur, oxygen, or vanadium may be added to the magnetic housing 115. In a particular embodiment, the magnetic housing 115 may include one or more of CoFe, CoNiFe, or CoFe:X, where X is P, S, O, or VO. X One or more of these materials. Using this high-permeability material for the magnetic housing 115 allows for an increase in the total inductance of the coupled coaxial inductor 130 while reducing or maintaining its overall size. This results in an improved inductance density of the coupled coaxial inductor 130 compared to existing solutions.

[0025] In one embodiment, the thickness of the magnetic housing 115 can be any suitable thickness. A greater thickness provides enhanced inductance. However, since the magnetic housing 115 is formed via an electroplating process, increasing the thickness of the magnetic housing 115 comes at the cost of longer processing time and increased manufacturing costs. In some embodiments, the magnetic housing 115 may have a thickness of up to about 10 μm or up to about 20 μm. In a particular embodiment, the thickness of the magnetic housing 115 is between about 3 μm and about 10 μm.

[0026] In the illustrated embodiment, the magnetic housing 115 directly contacts the sidewall 112 of the opening through the substrate 110. However, in some embodiments, the magnetic housing 115 may be separated from the substrate 110 by a seed layer. For example, the seed layer may be a conductive material used to initiate the electroplating of the magnetic housing 115.

[0027] In one embodiment, the magnetic insert 117 fills a portion of an opening within the magnetic housing 115. For example, the magnetic insert 117 may be surrounded by an inner sidewall 113 of the magnetic housing 115. The magnetic material comprising the magnetic insert 117 may have a lower permeability than the magnetic housing 115. The magnetic insert 117 may be an MPM (Magnetic Particulate Matter). Thus, the magnetic insert 117 can be dispensed quickly and cost-effectively into the opening through the substrate 110 (e.g., using a scraper process). In one embodiment, the magnetic insert 117 may be an MPM containing magnetic particles mixed into a polymer or the like.

[0028] In one embodiment, a pair of through holes 120 A and 120 B The thickness is set to allow the magnetic insert 117 to pass through. Through hole 120 A and 120 B It can be a conductive material, such as copper. In one embodiment, the through-hole 120 A and 120 B The sidewall 114 can be surrounded by the magnetic insert 117. Although the through hole 120 A and 120 B It is shown as being in direct contact with the magnetic insert 117, but it should be understood that it may be in direct contact with the through hole 120. A and 120 B A seed layer (not shown) is provided between the magnetic insert 117 and the through-hole 120. In one embodiment, the through-hole 120 A and 120 B It can have a diameter between approximately 25 μm and approximately 200 μm. In one embodiment, the through-hole is 120 μm. A and 120 B The sidewall 114 can be spaced from the magnetic housing 115 by up to 25 μm, up to 50 μm, or up to 100 μm. However, it should be understood that any spacing can be used depending on size constraints, desired inductance levels, etc.

[0029] exist Figure 1B In the illustrated embodiment, sidewalls 112, 113, and 114 are generally vertical (i.e., orthogonal to the top and bottom surfaces of substrate 110). Such vertically oriented sidewalls can exist when forming an opening through substrate 110 using a mechanical drilling process. However, in some embodiments, sidewalls with other profiles can also exist. For example, a laser ablation process through substrate 110 can create tapered sidewalls 112. In the case of a glass substrate 110, a laser-assisted etching process can also provide tapered sidewalls 112 or sidewalls 112 with double tapers (e.g., to form an opening with an hourglass profile). Figure 1BIn this embodiment, sidewalls 112, 113, and 114 are generally parallel to each other. However, in other embodiments, sidewalls 112, 113, and 114 may not be parallel to each other. For example, sidewall 112 may be inclined, and through hole 120 A and 120 B The sidewall 114 can be generally vertical. Such embodiments are possible when a laser-assisted etching process is used to form an opening through the glass substrate 110 and a mechanical drill is used to form an opening through the magnetic insert 117.

[0030] Now for reference Figures 2A-2K The illustration shows a series of diagrams depicting the process for forming an integrated coupled coaxial inductor 230 according to an embodiment.

[0031] Now for reference Figure 2A and Figure 2B A plan view of the substrate 210 according to an embodiment is shown. Figure 2A ) and corresponding cross-sectional diagrams ( Figure 2B As shown in the figure, the opening 205 is formed to penetrate the thickness of the substrate 210. In one embodiment, the substrate 210 may be a core substrate, such as an organic core or a glass core. The opening 205 can be formed using any suitable subtractive process, such as etching, drilling, or wiring. Figure 2A and Figure 2B In one embodiment, the sidewall 212 of the opening 205 is generally vertical. However, in other embodiments, the sidewall 212 may be inclined, curved, etc. In one embodiment, the length of the opening 205 may be greater than the width of the opening 205. For example, the length of the opening 205 may be between about 200 μm and about 500 μm, and the width of the opening 205 may be between about 150 μm and about 350 μm. However, it should be understood that embodiments may include any suitable length and / or width for the opening 205.

[0032] Now for reference Figure 2C and Figure 2D The diagram shows a plan view of the substrate 210 after the magnetic housing 215 has been deposited on the substrate 210 according to an embodiment. Figure 2C ) and corresponding cross-sectional diagrams ( Figure 2DThe magnetic housing 215 can be formed using any suitable electroplating process. For example, an electroplating process can be used to deposit the magnetic housing 215. In some embodiments, a seed layer (not shown) can be provided between the magnetic housing 215 and the substrate 210 to provide a starting point for the electroplating process. The magnetic housing 215 can be blanket-deposited on the substrate 210. For example, the magnetic housing 215 can be formed along the sidewall 212 of the opening 205 and the top and bottom surfaces of the substrate 210. The inner sidewall 213 of the magnetic housing 215 can be substantially parallel to the sidewall 212 of the opening 205.

[0033] In one embodiment, the magnetic housing 215 may comprise a PMM having high magnetic permeability. In one embodiment, the magnetic housing 215 may comprise any PMM already described herein as used as the magnetic housing 215. For example, the magnetic housing 215 may comprise one or more of cobalt, iron, or nickel. Additives such as one or more of phosphorus, sulfur, oxygen, or vanadium may be added to the magnetic housing 215. In a particular embodiment, the magnetic housing 215 may comprise one or more of CoFe, CoNiFe, or CoFe:X, wherein X is P, S, O, or V0. X One or more of them.

[0034] Now for reference Figure 2E and Figure 2F The diagram shows a plan view of the substrate 210 after the magnetic insert 217 has been deposited in the opening 205, according to an embodiment. Figure 2E ) and corresponding cross-sectional diagrams ( Figure 2F In one embodiment, the magnetic insert 217 may be an MPM. In one embodiment, the magnetic insert 217 may be dispensed into the opening 205 by a scraper filling process or the like. After the magnetic insert 217 is disposed in the opening 205, portions of the magnetic housing 215 on the top and bottom surfaces of the substrate 210 are removed (e.g., using a grinding and / or polishing process).

[0035] In some embodiments, the adhesion between the magnetic insert 217 and the magnetic housing 215 can be improved by roughening the inner sidewall 213 of the magnetic housing 215 before depositing the magnetic insert 217. For example, in some embodiments, the inner sidewall 213 of the magnetic housing 215 can be roughened using a short etching process. Since the magnetic insert 217 is deposited using a scraper process or the like, a seed layer is not required. Therefore, the magnetic insert 217 can directly contact the magnetic housing 215.

[0036] Now for reference Figure 2G and Figure 2H The diagram shows a plan view of the substrate 210 after the opening 207 is formed as a through magnetic insert 217, according to an embodiment. Figure 2G ) and corresponding cross-sectional diagrams ( Figure 2H In one embodiment, the opening 207 can be formed using laser processing, drilling, or the like. The profile of the sidewall 214 of the opening 207 can depend on the process used to form the opening 207.

[0037] Now for reference Figure 2I and Figure 2J The illustration shows a through-hole 220 formed in the opening 207 according to an embodiment. A and 220 B This is a plan view of the substrate 210 after the coaxial inductor 230 is coupled. Figure 2I ) and corresponding cross-sectional diagrams ( Figure 2J In one embodiment, through hole 220 A and 220 B Electroplating can fill the sidewall 214 of the opening 207. In some cases, a seed layer (not shown) can be provided on the sidewall 214 of the opening 207 to initiate electroplating. That is, in some embodiments, the through-hole 220 A and 220 B The seed layer material can be used to separate the magnetic insert 217. A surface roughening process (e.g., short-duration etching) can be performed on the sidewall 214 of the opening 207 to improve the via 220. A and 220 B Attachment between the magnetic insert 217 and the through-hole 220. In the illustrated embodiment, the through-hole 220 A and 220 B It is solid. However, in other embodiments, the through-hole 220 A and 220 B It can be a housing (as will be described in more detail in this article).

[0038] exist Figure 2I and Figure 2J In the illustrated embodiment, excess material (e.g., copper and / or seed layer material) is removed from the top and bottom surfaces of the substrate by a grinding and / or polishing process. However, in other embodiments, photolithography-defined electroplating can be used to bond the pads to the via 220. A and 220 B On the top and bottom. An example of this embodiment is... Figure 2K As shown in the figure, pad 224 can be provided in through hole 220. A and 220 B At either end of the via 220. Pad 224 can be formed by providing a resist layer on portions of the seed layer on the top and bottom surfaces of the substrate 210. After electroplating, the resist layer and the lower portion of the seed layer can be removed to allow the via 220 to be formed. Aand 220 B The pad 224 is defined above and / or below.

[0039] Now for reference Figure 3 A plan view of an alternative coaxial inductor architecture according to an additional embodiment is shown. Figures 2A-2K Comparison of the coupled coaxial inductor 230 in the middle, Figure 3 The image shows a coaxial inductor 330. A and 330 B Coaxial inductor 330 A and 330 B Each can have a single through-hole 320 surrounded by a magnetic insert 317 and a magnetic housing 315 within the substrate 310. The magnetic housing 315 can be a PMM, and the magnetic insert 317 can be an MPM. Because the high-permeability magnetic housing 315 is closer to the through-hole 320, its inductance is higher than the coupling solution described above. However, since the magnetic insert 317 and the magnetic housing 315 are not shared between the through-holes 320, the total area can be larger.

[0040] Now for reference Figure 4A and Figure 4B A plan view of a substrate 410 having an integrated coupled coaxial inductor 430 according to an embodiment is shown. Figure 4A ) and corresponding cross-sectional diagrams ( Figure 4B In the embodiment, besides through hole 420 A and 420 B Apart from its formation, the coupled coaxial inductor 430 can be similar to Figure 1A and Figure 1B The coupled coaxial inductor 130 is shown in the image. For example, the coupled coaxial inductor 430 may include a magnetic housing 415 (i.e., PMM) surrounding the magnetic insert 417 (i.e., MPM). However, the through-hole 420... A and 420 B It can also be a housing. For example, a through-hole 420. A and 420 B The interior can be filled with insulating plug material 428. That is, the insulating plug material 428 can contact the through hole 420. A and 420 B The inner wall is 425. Since the entire volume does not require copper plating, the use of this through-hole architecture allows for faster manufacturing.

[0041] Now for reference Figures 5A-5C The illustration shows a series of cross-sectional views depicting a process for forming a coupled coaxial inductor in a substrate 510 according to an embodiment. In the embodiment, references can be used... Figures 2A-2H The similar processing operations described are used to form Figure 5AThe structure is as follows. For example, a magnetic housing 515 can be formed along the sidewall of the opening through the substrate 510, and a magnetic insert 517 can fill the magnetic housing 515. The opening 507 can be formed into a through magnetic insert 517 by drilling, laser ablation, or other processes.

[0042] Now for reference Figure 5B The through-hole housing 520 according to an embodiment is shown. A and 520 B A cross-sectional view of the substrate 510 after electroplating on the sidewalls of the opening 507. In one embodiment, the sidewalls of the opening 507 can be roughened using an etching process or the like. The magnetic insert 517 and the through-hole housing 520 can also be... A and 520 B A seed layer (not shown) is provided between the top and bottom surfaces of the substrate 510. In one embodiment, residual seed layer material and copper on the top and bottom surfaces of the substrate 510 can be removed by polishing, etching, or other processes.

[0043] Now for reference Figure 5C This illustrates, according to an embodiment, the distribution of insulating plug material 528 into the through-hole housing 520. A and 520 B The diagram shows a cross-sectional view of the substrate 510 after the coupling of the coaxial inductor 530 is completed. In one embodiment, the insulating plug material 528 can be any suitable filler material, such as a cumulative film. In one embodiment, the insulating plug material 528 can be inserted into the through-hole housing 520 using any suitable process. A and 520 B middle.

[0044] Now for reference Figure 6 The diagram illustrates a flowchart of process 660 for forming a coaxial inductor according to embodiments described herein. In some cases, process 660 can be used to form either an integrated coupled coaxial inductor or an integrated coaxial inductor as described in more detail herein.

[0045] In one embodiment, process 660 may begin with operation 661, which includes forming an opening through the thickness of the substrate. In one embodiment, the substrate may be the core of a package substrate. For example, the substrate may be an organic core, a glass core, etc. The opening may be formed by laser drilling, mechanical drilling, etching, etc.

[0046] In one embodiment, process 660 may proceed to operation 662, which includes forming a first magnetic layer on the sidewall of the opening. In one embodiment, the first magnetic layer may include a PMM (Polymer Magnetic Material). The first magnetic layer may be structurally and / or compositionally similar to any magnetic housing described in more detail herein. For example, the first magnetic layer may have a high magnetic permeability. The first magnetic layer may be formed by processes such as electroplating.

[0047] In one embodiment, process 660 may proceed to operation 663, which includes filling the opening with a second magnetic layer different from the first magnetic layer. In one embodiment, the second magnetic layer may be an MPM similar to any magnetic insert described in more detail herein. For example, the second magnetic layer may be applied to the opening via a scraper process or the like.

[0048] In one embodiment, process 660 can proceed to operation 664, which includes forming a hole through the second magnetic layer. In one embodiment, the hole can be formed by a drilling process, a laser ablation process, or the like. Then, process 660 can proceed to operation 665, which includes forming a through-hole in the hole. The through-hole can be formed by an electroplating process. For example, a seed layer can be formed along the sidewalls of the hole, and the through-hole is electroplated to fill the sidewalls. In some embodiments, the hole is substantially filled with a through-hole. In other embodiments, the through-hole is a housing, and an insulating plug fills the remaining portion of the hole.

[0049] Now for reference Figure 7 The diagram shows a cross-sectional view of an electronic system 790 according to an embodiment. In this embodiment, the electronic system 790 may include a board 791, such as a printed circuit board (PCB) or a motherboard. In one embodiment, the board 791 may be coupled to a package substrate 700 via a second-level interconnect (SLI) 792. In one embodiment, the SLI 792 may include solder balls, sockets, etc.

[0050] In one embodiment, the package substrate 700 may include a core 710 having a coupled coaxial inductor 730. The coupled coaxial inductor 730 may include a magnetic housing 715 filled with a magnetic insert 717. A pair of through holes 720 A and 720 B It can be formed as a through magnetic insert 717. In one embodiment, the magnetic housing 715 is a PMM and the magnetic insert 717 is an MPM. For example, the permeability of the magnetic housing 715 can be higher than the permeability of the magnetic insert 717. Although in Figure 7 A specific example of a coupled coaxial inductor 730 is shown, but it should be understood that electronic system 790 may include any coaxial inductor structure described herein.

[0051] In one embodiment, a stacked layer 793 may be disposed above and below the core 710. The stacked layer 793 may include electrical wiring that couples the coaxial inductor 730 to other components within the electronic system 790, such as one or more dies 795. For example, one or more of the coupled coaxial inductors 730 may be part of a voltage regulator used to support power delivery to one or more dies 795. Figure 7 As shown, conductive routes (e.g., pads 782, vias 783, and / or traces 784) can be used to provide a conductive path from the coupled coaxial inductor 730 to one of the dies 795. In some embodiments, the coupled coaxial inductor 730 may have a first via 720 electrically connected to each other in parallel. A Second through hole 720 B (like Figure 7 The leftmost coupled coaxial inductor 730 is shown. However, in other embodiments, such as Figure 7 As shown in the intermediate coupled coaxial inductor 730, the coupled coaxial inductor 730 may have a first through-hole 720 disposed along different electrical paths (i.e., electrically isolated from each other). A Second through hole 720 B In addition to being electrically coupled to one or more dies 795, the coupled coaxial inductor 730 may also be electrically coupled to SLI 792 (e.g., to provide a power delivery path from board 791 to the coupled coaxial inductor 730).

[0052] In one embodiment, one or more dies 795 may be coupled to the accumulation layer 793 via a first-level interconnect (FLI) 794. The FLI 794 may be any suitable FLI architecture, such as solder balls, copper bumps, hybrid bonding interfaces, etc. In this embodiment, one or more dies 795 may be any type of die (e.g., processor dies (e.g., central processing unit (CPU), graphics processing unit (GPU), XPU), memory dies, communication dies, power management dies, etc.). In this embodiment, two or more dies 795 may be electrically coupled together via a bridge (not shown) embedded in or disposed on the accumulation layer 793.

[0053] Figure 8A computing device 800 according to one embodiment of the present disclosure is shown. The computing device 800 houses a board 802. The board 802 may include multiple components, including but not limited to a processor 804 and at least one communication chip 806. The processor 804 is physically and electrically coupled to the board 802. In some embodiments, at least one communication chip 806 is also physically and electrically coupled to the board 802. In a further implementation, the communication chip 806 is part of the processor 804. In one embodiment, a device package is coupled to the board 802. One or both of the processor 804 or the communication chip 806 may be coupled to the board 802 via the device package.

[0054] These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, graphics processors, digital signal processors, cryptographic processors, chipsets, antennas, displays, touchscreen displays, touchscreen controllers, batteries, audio codecs, video codecs, power amplifiers, global positioning system (GPS) devices, compasses, accelerometers, gyroscopes, speakers, cameras, and mass storage devices (e.g., hard disk drives, CDs, DVDs, etc.).

[0055] Communication chip 806 implements wireless communication for transmitting data to and from computing device 800. The term "wireless" and its derivatives can be used to describe circuits, devices, systems, methods, techniques, communication channels, etc., that can transmit data through a non-solid medium using modulated electromagnetic radiation. This term does not imply that the associated device does not contain any wires, although in some embodiments such devices may not contain any wires. Communication chip 806 can implement any of a number of wireless standards or wireless protocols, including but not limited to Wi-Fi (IEEE 802.11 series), WiMAX (IEEE 802.16 series), IEEE 802.20, LTE, Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, its derivatives, and any other wireless protocols designated as 3G, 4G, 5G, and higher. Computing device 800 may include multiple communication chips 806. For example, the first communication chip 806 can be specifically used for short-range wireless communication such as Wi-Fi and Bluetooth, and the second communication chip 806 can be specifically used for longer-range wireless communication such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, and Ev-DO.

[0056] The processor 804 of the computing device 800 includes an integrated circuit die packaged within the processor 804. In some implementations of this disclosure, according to the embodiments described herein, the processor's integrated circuit die may be part of a package substrate having a coupled coaxial inductor having a PMM housing and an MPM insert. The term "processor" may refer to any device or part of a device that processes electronic data from registers and / or memory to convert that electronic data into other electronic data that can be stored in registers and / or memory.

[0057] The communication chip 806 also includes an integrated circuit die packaged within the communication chip 806. According to another embodiment of this disclosure, the integrated circuit die of the communication chip may be part of a packaging substrate having a coupled coaxial inductor having a PMM housing and an MPM insert.

[0058] In this embodiment, computing device 800 can be part of any device. For example, computing device can be part of a personal computer, server, mobile device, tablet, automobile, etc. That is, computing device 800 is not limited to use in any particular type of system, and computing device 800 can be included in any device that can benefit from computing capabilities.

[0059] The above description of the implementations shown in this disclosure includes the content described in the abstract and is not intended to be exhaustive or to limit this disclosure to its precise form. While specific implementations and examples of this disclosure have been described herein for illustrative purposes, those skilled in the art will recognize that various equivalent modifications are possible within the scope of this disclosure.

[0060] These modifications can be made to this disclosure based on the above detailed description. The terminology used in the appended claims should not be construed as limiting this disclosure to the specific implementations disclosed in the specification and claims. Rather, the scope of this disclosure will be determined entirely by the appended claims, which should be interpreted according to established principles of claim interpretation.

[0061] Example:

[0062] Example 1: A device comprising: a substrate; an opening penetrating the substrate; a layer disposed on a sidewall of the opening, wherein the layer comprises a first magnetic material; an insert disposed in the opening, wherein the insert comprises a second magnetic material different from the first magnetic material; a first through-hole penetrating the insert; and a second through-hole penetrating the insert.

[0063] Example 2: The device according to Example 1 further includes: a seed layer, which is located between the sidewall of the opening and the layer.

[0064] Example 3: The device according to Example 1 or Example 2, wherein the first magnetic material is an electroplated magnetic material, and wherein the second magnetic material is a magnetic paste.

[0065] Example 4: The device according to Examples 1-3, wherein the first magnetic material has a first permeability and the second magnetic material has a second permeability, and wherein the first permeability is higher than the second permeability.

[0066] Example 5: The device according to Examples 1-4, wherein the first magnetic material comprises one or more of cobalt, iron, or nickel.

[0067] Example 6: The device according to Example 5, wherein the first magnetic material further includes one or more of phosphorus, sulfur, oxygen or vanadium.

[0068] Example 7: The device according to Examples 1-6, wherein the layer has a thickness of up to 10 μm.

[0069] Example 8: The device according to Examples 1-7, wherein the first through hole is spaced apart from the second through hole by a portion of the insert.

[0070] Example 9: The device according to Examples 1-8, wherein the first through-hole is a housing, and wherein the housing is filled with an electrically insulating layer.

[0071] Example 10: The device according to Examples 1-9 further includes: a first seed layer between the insert and the first through hole; and a second seed layer between the insert and the second through hole.

[0072] Example 11: A device comprising: a substrate; an inductor extending through the thickness of the substrate, wherein the inductor includes: a first conductive through-hole; a second conductive through-hole; an insert surrounding the first through-hole and the second through-hole, wherein the insert comprises a first magnetic material; and a housing surrounding the insert, wherein the housing comprises a second magnetic material different from the first magnetic material, and wherein the insert directly contacts the housing.

[0073] Example 12: The device according to Example 11, wherein the first magnetic material is a magnetic paste, and wherein the second magnetic material is an electroplated magnetic material.

[0074] Example 13: The device according to Example 11 or Example 12, wherein the first magnetic material has a first permeability and the second magnetic material has a second permeability, and wherein the first permeability is lower than the second permeability.

[0075] Example 14: The device according to Examples 11-13, wherein the first magnetic material comprises one or more of cobalt, iron, or nickel.

[0076] Example 15: The device according to Example 14, wherein the first magnetic material further comprises phosphorus, sulfur, oxygen or vanadium.

[0077] Example 16: The device according to Examples 11-15, wherein the substrate comprises an organic dielectric material.

[0078] Example 17: The device according to Examples 11-16, wherein the substrate includes a glass layer.

[0079] Example 18: A device comprising: a substrate; an opening extending through the thickness of the substrate; a housing lining the sidewalls of the opening, wherein the housing comprises a first magnetic material comprising one or more of cobalt, iron, or nickel; an insert disposed within the housing, wherein the insert comprises a second magnetic material comprising a polymer having magnetic filler particles; and a through-hole extending through the insert, wherein the through-hole is conductive.

[0080] Example 19: The device according to Example 18, wherein the through hole has an electrically insulating core.

[0081] Example 20: The device according to Example 18 or Example 19 further includes: a seed layer between the housing and the sidewall of the opening, wherein the insert directly contacts the housing.

Claims

1. An apparatus comprising: substrate; An opening that extends through the substrate; A layer disposed on the sidewall of the opening, wherein the layer comprises a first magnetic material; An insert, which is located in the opening, wherein the insert comprises a second magnetic material different from the first magnetic material; A first through hole, which penetrates the insert; and The second through hole extends through the insert.

2. The device according to claim 1, further comprising: A seed layer, which is located between the sidewall of the opening and the layer.

3. The device according to claim 1 or 2, wherein the first magnetic material is an electroplated magnetic material, and wherein the second magnetic material is a magnetic paste.

4. The device according to claim 1 or 2, wherein the first magnetic material has a first permeability and the second magnetic material has a second permeability, and wherein the first permeability is higher than the second permeability.

5. The device according to claim 1 or 2, wherein the first magnetic material comprises one or more of cobalt, iron, or nickel.

6. The device according to claim 5, wherein the first magnetic material further comprises one or more of phosphorus, sulfur, oxygen or vanadium.

7. The device according to claim 1 or 2, wherein the layer has a thickness of up to 10 μm.

8. The device according to claim 1 or 2, wherein the first through-hole is spaced apart from the second through-hole by a portion of the insert.

9. The device according to claim 1 or 2, wherein the first through-hole is a housing, and wherein the housing is filled with an electrically insulating layer.

10. The device according to claim 1 or 2, further comprising: A first seed layer is located between the insert and the first through hole; as well as A second seed layer is located between the insert and the second through hole.

11. An apparatus comprising: substrate; An inductor that extends through the thickness of the substrate, wherein the inductor comprises: The first conductive through-hole; A conductive second through hole; An insert surrounding the first through-hole and the second through-hole, wherein the insert comprises a first magnetic material; and A housing surrounding the insert, wherein the housing comprises a second magnetic material different from the first magnetic material, and wherein the insert is in direct contact with the housing.

12. The apparatus of claim 11, wherein the first magnetic material is a magnetic paste, and wherein the second magnetic material is an electroplated magnetic material.

13. The device according to claim 11 or 12, wherein the first magnetic material has a first permeability and the second magnetic material has a second permeability, and wherein the first permeability is lower than the second permeability.

14. The device according to claim 11 or 12, wherein the first magnetic material comprises one or more of cobalt, iron, or nickel.

15. The device of claim 14, wherein the first magnetic material further comprises phosphorus, sulfur, oxygen or vanadium.

16. The device according to claim 11 or 12, wherein the substrate comprises an organic dielectric material.

17. The device according to claim 11 or 12, wherein the substrate comprises a glass layer.

18. An apparatus comprising: substrate; An opening that extends through the thickness of the substrate; A housing lining the sidewalls of the opening, wherein the housing comprises a first magnetic material, the first magnetic material comprising one or more of cobalt, iron, or nickel; An insert, located within the housing, wherein the insert comprises a second magnetic material comprising a polymer having magnetic filler particles; and A through-hole that extends through the insert, wherein the through-hole is conductive.

19. The device of claim 18, wherein the through hole has an electrically insulating core.

20. The device according to claim 18 or 19, further comprising: A seed layer is located between the housing and the sidewall of the opening, wherein the insert directly contacts the housing.

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