Single-point diamond grinding induced silicon carbide amorphization assisted ultra-precision turning method and system and obtained complex curved surface single crystal silicon carbide mold
By using a single-point diamond grinding-induced silicon carbide amorphization-assisted ultra-precision turning composite machining system, combined with a thermal field and active chemical medium, an amorphous layer is formed and ductile cutting is performed, solving the problem of efficient and precise machining of complex curved silicon carbide molds and achieving efficient and low-damage machining of complex curved surfaces.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- YANSHAN UNIV
- Filing Date
- 2026-04-17
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional processing methods are difficult to achieve high-efficiency and high-precision processing of complex curved silicon carbide molds. Existing composite processing technologies cannot meet the processing requirements of complex curved molds and have problems such as thermal damage, uneven chemical modification, and residual liquid affecting mold life.
A single-point diamond grinding-induced silicon carbide amorphization-assisted ultra-precision turning composite machining system is adopted. Through the synergistic effect of thermal field, active chemical medium and precision mechanical removal, a continuous and uniform amorphous layer is formed, and ductile cutting is performed using a diamond turning tool to achieve efficient and low-damage material removal.
It achieves efficient and low-damage machining of complex curved silicon carbide molds, with a surface roughness of less than 1 nm, a surface shape accuracy of less than 0.3 μm, and extremely shallow subsurface damage, significantly improving machining efficiency and quality.
Smart Images
Figure CN122401243A_ABST