A method of manufacturing a semiconductor having a low conductivity region
By controlling the temperature and gas conditions of the reaction chamber, polycrystalline silicon is formed using H2, SiH4, and boron gas, solving the problems of low efficiency and high cost in existing semiconductor manufacturing technologies, and realizing semiconductor manufacturing in the low conductivity region.
CN122406374APending Publication Date: 2026-07-17SAE TECH DELEVOPMENT DONGGUAN
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-17
- Publication Date
- 2026-07-17
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Figure CN122406374A_ABST
Abstract
本发明公开了一种具有低电导率区域的半导体的制造方法，包括：将半导体晶片置于反应室中，并控制所述反应室中的温度为预设温度；向所述反应室中通入反应气体，使得所述半导体晶片表面的硅原子与所述反应气体的气体分子发生反应并沉积在所述半导体晶片的表面上，以形成多晶硅；向所述反应室中通入掺杂气体，并控制所述掺杂气体的气体原子在所述半导体晶片表面的掺杂浓度，且控制所述掺杂气体的浓度和功率，以控制所述多晶硅的形成时间、纹理方向、形状和密度。本发明通过控制沉积和掺杂条件来形成局部的半导体掺杂，能够制造出具有降低了电导率的区域的半导体，并且具有制造步骤简单、制造效率高、成本低等优点。
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