A power device of field plate substrate structure and a manufacturing method thereof
By introducing single-layer, double-layer, or multi-layer field plate structures into GaN high electron mobility transistor devices and adjusting the electrical connection method, the problem of difficult capacitance control under high voltage and high frequency of traditional devices is solved, thereby improving the stability and withstand voltage of the devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUXI NCE POWER
- Filing Date
- 2026-04-02
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional GaN high electron mobility transistors are difficult to effectively control the gate-related capacitance and electric field distribution under high voltage and high frequency operating conditions, which leads to instability of the device in the off state and may cause problems such as abnormal turn-on and current surge.
By employing single-layer, double-layer, or multi-layer field plate structures and changing the electrical connection between the field plate and the gate and substrate, the potential stability of the device in the off state can be increased by adjusting the gate-related capacitance.
It improves the stability and reliability of the device under complex voltage operating conditions, enhances its withstand voltage capability, and reduces the sensitivity of the gate potential to external voltage changes.
Smart Images
Figure CN122421384A_ABST