Flow uniformizing device and semiconductor apparatus
By using a quartz grid plate and an aluminum alloy retaining ring, the corrosion problem of the grid plate by corrosive gases was solved, ensuring the reaction rate and etching yield of semiconductor equipment, and achieving the stability of the grid plate and preventing particulate contamination.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING E TOWN SEMICON TECH CO LTD
- Filing Date
- 2026-04-29
- Publication Date
- 2026-07-17
AI Technical Summary
During the etching stage of semiconductor manufacturing, the corrosion of the grid plate by corrosive gases leads to a decrease in plasma reaction rate and particulate contamination, affecting the etching yield.
The first and second grid plates are made of quartz and combined with aluminum alloy fixing rings. A dense aluminum oxide film is formed through hard anodizing to avoid oxidation and corrosion by corrosive gases. They are fixed by connectors to form a limiting space to ensure the stability of the grid plates and prevent particulate matter contamination.
It effectively avoids the oxidation and corrosion of the grid plate by corrosive gases, maintains the plasma reaction rate, reduces particulate matter contamination, and improves the etching yield.
Smart Images
Figure CN122421702A_ABST