A method of manufacturing a semiconductor device

Abstract

The application discloses a manufacturing method of a semiconductor device, which comprises the following steps: forming a titanium oxide film on the surface of a semiconductor substrate; forming a buffer layer on the surface of a semiconductor wafer; assembling the semiconductor substrate and the semiconductor wafer together so that the titanium oxide film and the buffer layer are in contact; and heating the assembly of the semiconductor substrate and the semiconductor wafer to a preset temperature and keeping for a preset time, so that the titanium oxide film is dissolved in the semiconductor substrate, and a semiconductor device with low stress is obtained. The technical scheme of the application can relieve the stress between the semiconductor wafer and the substrate, thereby reducing the influence of the stress on the semiconductor device, and further improving the performance and reliability of the semiconductor device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method for manufacturing a semiconductor device. Background Technology

[0002] Semiconductor wafers are typically composed of different materials that may experience varying temperature changes and mechanical stresses during fabrication. When the semiconductor wafer and substrate are bonded together through processing or bonding techniques, the differences in the properties of these materials can cause slight changes in the lattice structure between them, resulting in stress. This stress can sometimes affect the performance of the semiconductor wafer and substrate; for example, it may lead to semiconductor device failure or performance degradation. Therefore, in the design and manufacturing of semiconductor devices, measures need to be taken to reduce the stress between the semiconductor wafer and substrate to minimize its impact and improve the performance and reliability of the semiconductor device. Summary of the Invention

[0003] The purpose of this invention is to provide a method for manufacturing a semiconductor device that can alleviate the stress between the semiconductor wafer and the substrate, thereby reducing the impact of stress on the semiconductor device and improving the performance and reliability of the semiconductor device.

[0004] To achieve the above objectives, embodiments of the present invention provide a method for manufacturing a semiconductor device, comprising:

[0005] A titanium oxide thin film is formed on the surface of a semiconductor substrate;

[0006] A buffer layer is formed on the surface of a semiconductor wafer;

[0007] The semiconductor substrate and the semiconductor wafer are assembled together such that the titanium oxide thin film and the buffer layer are in contact;

[0008] The assembly of the semiconductor substrate and the semiconductor wafer is heated to a preset temperature and held for a preset time, so that the titanium oxide film dissolves in the semiconductor substrate, thereby obtaining a low-stress semiconductor device.

[0009] Furthermore, the thickness of the titanium oxide film is 150 nm.

[0010] Furthermore, the buffer layer is composed of aluminum oxide.

[0011] Furthermore, the thickness of the buffer layer is 200 nm.

[0012] Furthermore, the preset temperature is 600–850°C.

[0013] Furthermore, the preset time is 30 minutes.

[0014] Compared with existing technologies, this invention provides a method for manufacturing a semiconductor device. First, a titanium oxide thin film is formed on the surface of a semiconductor substrate, and a buffer layer is formed on the surface of a semiconductor wafer. Then, the semiconductor substrate and the semiconductor wafer are assembled together, with the titanium oxide thin film and the buffer layer in contact. Finally, the assembly of the semiconductor substrate and the semiconductor wafer is heated to a preset temperature and held for a preset time, causing the titanium oxide thin film to dissolve into the semiconductor substrate, thereby obtaining a low-stress semiconductor device. This invention, by incorporating a titanium oxide thin film into the semiconductor substrate, can alleviate the stress between the semiconductor wafer and the substrate, thereby reducing the impact of stress on the semiconductor device and improving its performance and reliability. Attached Figure Description

[0015] Figure 1 This is a flowchart of a preferred embodiment of a semiconductor device manufacturing method provided by the present invention. Detailed Implementation

[0016] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0017] This invention provides a method for manufacturing a semiconductor device, see [link to relevant documentation]. Figure 1 The diagram shown is a flowchart of a preferred embodiment of a semiconductor device manufacturing method provided by the present invention, the method comprising steps S11 to S14:

[0018] Step S11: Form a titanium oxide thin film on the surface of a semiconductor substrate;

[0019] Step S12: Form a buffer layer on the surface of the semiconductor wafer;

[0020] Step S13: Assemble the semiconductor substrate and the semiconductor wafer together so that the titanium oxide thin film and the buffer layer are in contact;

[0021] Step S14: Heat the assembly of the semiconductor substrate and the semiconductor wafer to a preset temperature and hold it for a preset time, so that the titanium oxide film dissolves in the semiconductor substrate to obtain a low-stress semiconductor device.

[0022] In practice, firstly, a material soluble in the semiconductor substrate, such as titanium oxide (TiO2), is selected, and a thin film of this material is formed on the surface of the semiconductor substrate, i.e., a titanium oxide thin film is formed on the surface of the semiconductor substrate, and a buffer layer is formed on the surface of the semiconductor wafer. Then, the semiconductor substrate and the semiconductor wafer are assembled together, so that the titanium oxide thin film on the surface of the semiconductor substrate and the buffer layer on the surface of the semiconductor wafer are in contact. Finally, the assembly of the semiconductor substrate and the semiconductor wafer is heated to a preset temperature and held at the preset temperature for a preset time, so that the titanium oxide thin film dissolves in the semiconductor substrate, thereby obtaining a low-stress semiconductor device.

[0023] It should be noted that by incorporating the titanium oxide thin film into the substrate, the embodiments of the present invention can alleviate the stress between the semiconductor wafer and the substrate, thereby improving the performance and reliability of the obtained semiconductor device.

[0024] In one alternative embodiment, the titanium oxide film has a thickness of 150 nm.

[0025] Specifically, in conjunction with the above embodiments, the thickness of the titanium oxide thin film formed on the surface of the semiconductor substrate in this embodiment of the invention is 150 nanometers.

[0026] In one alternative embodiment, the buffer layer is composed of aluminum oxide.

[0027] Specifically, in conjunction with the above embodiments, the buffer layer formed on the surface of the semiconductor wafer in the embodiments of the present invention is composed of aluminum oxide (Al2O3), that is, the embodiments of the present invention can form an aluminum oxide layer as a buffer layer on the surface of the semiconductor wafer.

[0028] In one alternative embodiment, the thickness of the buffer layer is 200 nm.

[0029] Specifically, in conjunction with the above embodiments, the thickness of the buffer layer formed on the surface of the semiconductor wafer in this embodiment of the invention is 200 nanometers, that is, the thickness of the aluminum oxide layer is 200 nanometers.

[0030] In one optional embodiment, the preset temperature is 600–850°C.

[0031] Specifically, in conjunction with the above embodiments, when heating the assembly of the semiconductor substrate and the semiconductor wafer to a preset temperature, the preset temperature can be selected within the range of 600°C to 850°C. That is, the embodiments of the present invention can heat the assembly of the semiconductor substrate and the semiconductor wafer to heat it to 600°C to 850°C.

[0032] For example, the preset temperature can be 600℃, 610℃, 620℃, 630℃, 640℃, 650℃, 660℃, 670℃, 680℃, 690℃, 700℃, 710℃, 720℃, 730℃, 740℃, 750℃, 760℃, 770℃, 780℃, 790℃, 800℃, 810℃, 820℃, 830℃, 840℃, or 850℃, and can also be set according to actual needs. This embodiment of the invention does not impose specific limitations.

[0033] In one optional embodiment, the preset time is 30 minutes.

[0034] Specifically, in conjunction with the above embodiments, after heating the assembly of the semiconductor substrate and the semiconductor wafer to a preset temperature, the present invention needs to maintain the assembly at the preset temperature for a preset time. The preset time can be 30 minutes. That is, the present invention can heat the assembly of the semiconductor substrate and the semiconductor wafer to 600°C to 850°C and maintain the assembly at 600°C to 850°C for 30 minutes, so that the titanium oxide film dissolves in the semiconductor substrate.

[0035] Based on all the above embodiments, the implementation process of this solution is described below through the first specific embodiment, including: (1) selecting a material soluble in semiconductor substrate, such as titanium oxide (TiO2), and forming a titanium oxide thin film with a thickness of 150 nm on the surface of semiconductor substrate; (2) forming a buffer layer of aluminum oxide (Al2O3) with a thickness of 200 nm on the surface of semiconductor wafer; (3) assembling semiconductor substrate and semiconductor wafer together, so that the titanium oxide thin film on the surface of semiconductor substrate and the buffer layer on the surface of semiconductor wafer are in contact; (4) heating the assembly of semiconductor substrate and semiconductor wafer to 600°C and holding it at 600°C for 30 min, so that the titanium oxide thin film dissolves in semiconductor substrate, thereby obtaining a low-stress semiconductor device.

[0036] Based on all the above embodiments, the implementation process of this solution is described below through a second specific embodiment, including: (1) selecting a material soluble in the semiconductor substrate, such as titanium oxide (TiO2), and forming a titanium oxide thin film with a thickness of 150 nm on the surface of the semiconductor substrate; (2) forming a buffer layer of aluminum oxide (Al2O3) with a thickness of 200 nm on the surface of the semiconductor wafer; (3) assembling the semiconductor substrate and the semiconductor wafer together, so that the titanium oxide thin film on the surface of the semiconductor substrate and the buffer layer on the surface of the semiconductor wafer are in contact; (4) subjecting the assembly of the semiconductor substrate and the semiconductor wafer to heat treatment, so as to heat the assembly of the semiconductor substrate and the semiconductor wafer to 725°C and hold it at 725°C for 30 min, so that the titanium oxide thin film dissolves in the semiconductor substrate, thereby obtaining a low-stress semiconductor device.

[0037] Based on all the above embodiments, the implementation process of this solution is described below through a third specific embodiment, including: (1) selecting a material soluble in the semiconductor substrate, such as titanium oxide (TiO2), and forming a titanium oxide thin film with a thickness of 150 nm on the surface of the semiconductor substrate; (2) forming a buffer layer of aluminum oxide (Al2O3) with a thickness of 200 nm on the surface of the semiconductor wafer; (3) assembling the semiconductor substrate and the semiconductor wafer together, so that the titanium oxide thin film on the surface of the semiconductor substrate and the buffer layer on the surface of the semiconductor wafer are in contact; (4) subjecting the assembly of the semiconductor substrate and the semiconductor wafer to heat treatment, so as to heat the assembly of the semiconductor substrate and the semiconductor wafer to 850°C and hold it at 850°C for 30 min, so that the titanium oxide thin film dissolves in the semiconductor substrate, thereby obtaining a low-stress semiconductor device.

[0038] In summary, the semiconductor device manufacturing method provided by this invention involves first forming a titanium oxide thin film on the surface of a semiconductor substrate and a buffer layer on the surface of a semiconductor wafer; then, assembling the semiconductor substrate and the semiconductor wafer together, such that the titanium oxide thin film and the buffer layer are in contact; finally, heating the assembly of the semiconductor substrate and the semiconductor wafer to a preset temperature and holding it for a preset time, causing the titanium oxide thin film to dissolve into the semiconductor substrate, thereby obtaining a low-stress semiconductor device. This invention, by incorporating a titanium oxide thin film into the semiconductor substrate, can alleviate the stress between the semiconductor wafer and the substrate, thereby reducing the impact of stress on the semiconductor device and improving its performance and reliability.

[0039] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for manufacturing a semiconductor device, characterized in that, include: A titanium oxide thin film is formed on the surface of a semiconductor substrate; A buffer layer is formed on the surface of a semiconductor wafer; The semiconductor substrate and the semiconductor wafer are assembled together such that the titanium oxide thin film and the buffer layer are in contact; The assembly of the semiconductor substrate and the semiconductor wafer is heated to a preset temperature and held for a preset time, so that the titanium oxide film dissolves in the semiconductor substrate, thereby obtaining a low-stress semiconductor device.

2. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, The thickness of the titanium oxide film is 150 nm.

3. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, The buffer layer is composed of aluminum oxide.

4. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, The thickness of the buffer layer is 200 nm.

5. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, The preset temperature is 600–850°C.

6. The method for manufacturing a semiconductor device as described in claim 1, characterized in that, The preset time is 30 minutes.

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