Preparation method and application of low-temperature sintered low-cost aluminum nitride ceramic substrate

By using a Y2O3-Al2O3-CaO ternary composite additive and a three-stage gradient sintering process, the problems of high temperature and high energy consumption and abnormal grain growth in the preparation of aluminum nitride ceramic substrates were solved, achieving low-temperature densification and high-performance aluminum nitride ceramic substrates suitable for packaging high-power electronic devices.

CN122444529APending Publication Date: 2026-07-24YANGZHOU XIAOTIAN PHOTOSKOT TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANGZHOU XIAOTIAN PHOTOSKOT TECHNOLOGY CO LTD
Filing Date
2026-04-23
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

Existing aluminum nitride ceramic substrate preparation technologies suffer from problems such as high sintering temperature, high energy consumption and equipment costs, high additive costs, inability to simultaneously achieve low-temperature densification and deformation resistance, easy abnormal grain growth, low substrate flatness, and poor finished product yield, making it difficult to meet the packaging requirements of high-end power electronic devices.

Method used

By using medium-purity AlN powder and Y2O3-Al2O3-CaO ternary composite sintering aid, combined with low-temperature air debinding and a three-stage gradient sintering process, and by precisely controlling liquid phase generation and grain boundary support, low-temperature densification at 1600℃ under normal pressure is achieved, abnormal grain growth is suppressed, and the entire process is optimized to improve the flatness and mechanical properties of the substrate.

Benefits of technology

A breakthrough in synergistic effect between low-temperature sintering and high performance has been achieved. The product has high density, high thermal conductivity, high bending strength and low deformation, which reduces production costs and energy consumption, making it suitable for mass production and meeting the packaging requirements of high-power electronic devices.

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Abstract

The application discloses a preparation method and application of a low-temperature sintered low-cost aluminum nitride ceramic substrate, and belongs to the field of advanced ceramic materials and electronic packaging technologies. 50 The application selects a medium-purity aluminum nitride base powder with a purity of 99.5-99.8%, an oxygen content of less than or equal to 0.5% and a median particle size D=1-1.5 mu m as a main material, matches a composite sintering aid with a specific ratio, and additionally has an organic bonding system, so that the finished product is prepared through raw material drying, planetary ball milling, temperature and humidity control flow casting, air atmosphere glue removal, high-purity nitrogen three-stage low-temperature sintering, gradient cooling and precise post-processing, and the sintering temperature is 1600 DEG C. The application realizes low-temperature dense sintering through the synergistic effect of the aid, effectively inhibits abnormal grain growth, avoids substrate sintering deformation and cracking, and has excellent flatness. The preparation process is simple and controllable, the production cost is low, the aluminum nitride ceramic substrate prepared has stable performance, and can be widely applied to the heat dissipation packaging field of various electronic devices.
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Citation Information

Patent Citations

  • CN121673062A