A method for etching a capacitor lower electrode pattern and a capacitor lower electrode
By forming a protective layer on the surface of the lower electrode and using carbon-fluorine system gas etching and cleaning with weak and strong acid solutions, the problem of polymer residue in traditional processes is solved, thereby improving the capacitance reliability and performance of CMOS image sensors.
CN122458438APending Publication Date: 2026-07-24SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO LTD
- Filing Date
- 2025-01-24
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
In the traditional MIM capacitor bottom electrode pattern etching process, polymer residue issues can lead to substandard capacitance or conduction between the upper and lower electrodes, affecting the reliability of high-pixel, high-performance CMOS image sensors.
Method used
A protective layer is formed on the surface of the lower electrode. The lower electrode is then cleaned by gas etching using a fluorocarbon system combined with wet cleaning using weak and strong acid solutions to remove the polymer and protect it from damage.
Benefits of technology
This method effectively removes polymer residues, improves capacitor reliability, and ensures the capacitor performance of high-pixel, high-performance CMOS image sensors. It is simple and inexpensive.
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Figure CN122458438A_ABST
Abstract
The application discloses a capacitor lower electrode pattern etching method and a capacitor lower electrode, and belongs to the technical field of semiconductors. The method comprises the following steps: sequentially forming a lower electrode, a protective layer and a photoresist layer along a thickness direction on a substrate surface; exposing and developing the photoresist layer to form a patterned photoresist layer; etching the protective layer and the lower electrode along the thickness direction according to the patterned photoresist layer; removing the photoresist layer after the etching is completed; after the photoresist layer is removed, wet cleaning is performed to remove the protective layer, so that a polymer attached to the surface of the protective layer is removed, and the capacitor lower electrode is obtained; and the polymer is formed in the etching process and / or the photoresist layer removing process. The application can effectively remove the polymer generated on the surface of the side of the lower electrode away from the substrate in the etching process and the photoresist layer removing process while guaranteeing the performance, and thus the reliability of the capacitor in a high-pixel and high-performance CMOS image sensor can be improved. Moreover, the method is simple to implement, low in cost and remarkable in effect.
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