Surface acoustic wave device and radio frequency front-end module

Abstract

The application discloses a surface acoustic wave device and a radio frequency front-end module, and relates to the technical field of radio frequency filtering.The surface acoustic wave device comprises a piezoelectric substrate, an interdigital transducer and a first suppression structure.The interdigital transducer is arranged on the surface of the piezoelectric substrate.The interdigital transducer comprises bus bars arranged oppositely, and a plurality of electrode fingers connected with the bus bars and arranged at intervals.The plurality of electrode fingers are arranged alternately.The first suppression structure is located in a gap region.The second suppression structure is arranged on the electrode finger in the edge region.The projection of two adjacent first suppression structures in a first direction does not completely overlap, and the projection of two adjacent first suppression structures in a second direction does not completely overlap.The second direction is the arrangement direction of the electrode fingers.The application can effectively improve the suppression effect of the surface acoustic wave device on some specific types of mode mixing, thereby improving the overall mode mixing suppression effect.

Description

Technical Field

[0001] This application relates to the field of radio frequency filtering technology, and in particular to a surface acoustic wave device and a radio frequency front-end module. Background Technology

[0002] Surface acoustic wave (SAW) devices, such as SAW resonators, are devices that convert electrical signals into acoustic signals or vice versa. SAW devices typically consist of a piezoelectric substrate and an interdigital transducer (IDT). The IDT is formed on the piezoelectric substrate and can be used to convert electrical signals into acoustic signals or vice versa.

[0003] The performance of surface acoustic wave (SAW) devices is affected by heterogeneous modes, which come in many types, such as transverse modes and waveguide modes. In related technologies, a suppressor structure (piston) is typically placed at the tip of the electrode fingers to suppress some heterogeneous modes. However, for certain specific types of heterogeneous modes, the use of a piston is insufficient to effectively suppress them, resulting in the heterogeneous mode suppression performance of SAW devices still failing to meet practical application requirements. Summary of the Invention

[0004] This application provides a surface acoustic wave (SAW) device and an RF front-end module, which can effectively improve the SAW device's suppression effect on certain specific types of miscellaneous modes, thereby improving the overall miscellaneous mode suppression effect of the SAW device.

[0005] In a first aspect, this application provides a surface acoustic wave device, the surface acoustic wave device comprising a piezoelectric substrate, an interdigital transducer, a first suppression structure and a second suppression structure; The interdigital transducer is disposed on the surface of the piezoelectric substrate. The interdigital transducer includes busbars arranged opposite each other and a plurality of electrode fingers connected to and spaced apart from the busbars. The plurality of electrode fingers are arranged alternately. In a first direction, there is an overlapping region between two busbars. The overlapping region includes a middle region and edge regions located on both sides of the middle region in the first direction. A gap region is formed between the overlapping region and the busbar. The first direction is the extension direction of the electrode fingers. The first suppression structure is located in the gap region; The second suppression structure is disposed on the electrode finger in the edge region; Wherein, the projections of two adjacent first suppression structures in the first direction do not completely overlap, and the projections of two adjacent first suppression structures in the second direction do not completely overlap, the second direction being the arrangement direction of the electrode fingers.

[0006] Secondly, this application provides a surface acoustic wave device, which includes a piezoelectric substrate, an interdigital transducer, a first suppression structure, and a second suppression structure. The interdigital transducer is disposed on the surface of the piezoelectric substrate. The interdigital transducer includes busbars arranged opposite each other and a plurality of electrode fingers connected to and spaced apart from the busbars. The plurality of electrode fingers are arranged alternately. In a first direction, there is an overlapping region between two busbars. The overlapping region includes a middle region and edge regions located on both sides of the middle region in the first direction. A gap region is formed between the overlapping region and the busbar. The first direction is the extension direction of the electrode fingers. The first suppression structure is located in the gap region; The second suppression structure is disposed on the electrode finger in the edge region; The two gap regions are arranged opposite each other and have different filling rates. The filling rate of the gap region is the ratio of the area of ​​the first suppression structure to the area of ​​the gap region. In the same gap region, the projections of two adjacent first suppression structures in the first direction do not completely overlap, and the projections of two adjacent first suppression structures in the second direction do not completely overlap. The second direction is the arrangement direction of the electrode fingers.

[0007] Thirdly, this application provides a radio frequency front-end module, which includes the surface acoustic wave device as described above.

[0008] This application provides a surface acoustic wave (SAW) device and a radio frequency (RF) front-end module. The SAW device includes a piezoelectric substrate, an interdigital transducer, and a first suppression structure. The interdigital transducer is disposed on the surface of the piezoelectric substrate and includes a busbar disposed opposite to each other and a plurality of electrode fingers connected to and spaced apart from the busbars. The plurality of electrode fingers are arranged alternately. In a first direction, there is an overlapping region between two busbars, and a gap region is formed between the overlapping region and the busbars. The first direction is the extension direction of the electrode fingers. The first suppression structure is located in the gap region, and a second suppression structure is disposed on the electrode fingers in the edge region. The projections of two adjacent first suppression structures in the first direction do not completely overlap, and the projections of two adjacent first suppression structures in the second direction do not completely overlap. The second direction is the arrangement direction of the electrode fingers. By controlling the projections of two adjacent first suppression structures to not completely overlap in the first and second directions, the two adjacent first suppression structures are asymmetrically arranged in the first and second directions. That is, the two adjacent first suppression structures are randomly distributed in the gap region. Since the two adjacent first suppression structures are randomly and irregularly distributed in the gap region, the gap region cannot form an obvious resonant cavity or the resonant cavities formed will not overlap to form strong clutter modes. This can effectively suppress specific types of clutter modes (i.e. clutter modes that easily intrude into the gap region), thereby comprehensively improving the clutter mode suppression effect of surface acoustic wave devices. Attached Figure Description

[0009] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0010] Figure 1 This is a schematic diagram of the structure of a surface acoustic wave device provided by related technologies; Figure 2 This is a schematic diagram of the harmonic admittance curves corresponding to surface acoustic wave devices provided by related technologies; Figure 3 These are schematic diagrams of the top structure of the surface acoustic device provided by related technologies, and schematic diagrams of the vibration modes corresponding to Spurious1, Spurious2 and Spurious3. Figure 4 This is a schematic diagram of the harmonic admittance curve of the surface acoustic wave device after the suppression structure has been optimized, as provided in the embodiments of this application. Figure 5 This is a schematic diagram comparing the real part of the admittance curves of the surface acoustic wave device before and after the suppression structure is optimized, as provided in the embodiments of this application. Figure 6This is a top view of the surface acoustic device with optimized suppression structure and a mode shape diagram corresponding to the Spurious3 mode provided in the embodiments of this application. Figure 7 This is a schematic diagram of the structure of a surface acoustic wave device provided in an embodiment of this application; Figure 8 This is a schematic diagram of another surface acoustic wave device provided in the embodiments of this application; Figure 9 This is a schematic diagram of another surface acoustic wave device provided in the embodiments of this application; Figure 10 This is a schematic diagram of another surface acoustic wave device provided in the embodiments of this application; Figure 11 This is a schematic diagram of another surface acoustic wave device provided in the embodiments of this application; Figure 12 This is a schematic diagram of another surface acoustic wave device provided in the embodiments of this application; Figure 13 This is a schematic diagram comparing the harmonic admittance curves of the surface acoustic wave device provided in Embodiment 1 and Comparative Example 1, as provided in this application. Detailed Implementation

[0011] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0012] The flowchart shown in the attached diagram is for illustrative purposes only and does not necessarily include all content and operations / steps, nor does it necessarily have to be performed in the order described. For example, some operations / steps can be broken down, combined, or partially merged, so the actual execution order may change depending on the actual situation.

[0013] It should be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms.

[0014] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0015] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0016] Before introducing the surface acoustic wave device provided in this application, we will first introduce the several types of miscellaneous modes involved in this application.

[0017] In related technologies, high-performance surface acoustic wave (SAW) devices typically need to be unaffected by noxious modes. Noxious modes generally include transverse modes, higher-order modes, SH (Shear Horizontal) modes, Rayleigh modes, etc. Different types of noxious modes will have different effects on SAW devices, and the mechanisms of action and elimination of different types of noxious modes are different.

[0018] Higher-order modes are generally resonant modes formed by volume waves in the depth direction, mainly occurring in temperature-compensated surface acoustic wave (SAW) filters (TC-SAW) and thin-model SAW filters (TF-SAW). Transverse modes, on the other hand, are widely present in various types of SAW devices, and are most prominent in TC-SAW and point-of-in-place (POI-SAW) filters.

[0019] Surface acoustic wave (SAW) devices provided in related technologies typically employ fingertip widening or thickening. This structure generally only provides good suppression of certain specific miscellaneous modes, while having no effect on other types of miscellaneous modes. Based on this, miscellaneous modes can be divided into Class I and Class II miscellaneous modes. Class I miscellaneous modes are those that can be suppressed by adjusting the width or thickness of the fingertip, while Class II miscellaneous modes cannot be suppressed by changing the width or thickness of the fingertip.

[0020] like Figure 1 As shown, Figure 1 This is a schematic diagram of the structure of a surface acoustic wave (SAW) device provided by related technologies. Figure 1 It can be seen that the electrode tips of the interdigital transducers of surface acoustic wave devices are equipped with suppression structures, and short-strip structures (GAP Shot Structure, GSS) are used in the gap region (GAP) on the outer side of the finger tips to suppress miscellaneous modes.

[0021] Specifically, the suppression structure is located at the tip of the electrode finger. The suppression structure can be positioned in the width direction, the thickness direction, or both directions of the electrode finger tip. Specifically, if the suppression structure includes the second suppression structure provided in this application, this second suppression structure can be positioned above each electrode finger tip, thereby increasing the overall thickness of the electrode finger tip. Alternatively, the second suppression structure can be positioned on both sides of the electrode finger tip, effectively increasing the width of the electrode finger tip. Or, in the same resonator structure, the second suppression structure can be simultaneously positioned above or on both sides of the electrode finger tip, thereby effectively suppressing unwanted modes.

[0022] like Figure 2 As shown, Figure 2 This is a schematic diagram of the harmonic admittance curves for surface acoustic wave (SAW) devices provided by related technologies. This is achieved by setting suppression structures at the electrode finger tips of the interdigital transducer and short-circuit strip structures in the gap region, combined with... Figure 2 As can be seen from the harmonic admittance curves, surface acoustic wave devices also have three main miscellaneous modes, namely miscellaneous mode Spurious1, miscellaneous mode Spurious2 and miscellaneous mode Spurious3.

[0023] like Figure 3 As shown, Figure 3 These are top view structural diagrams of surface acoustic devices provided by related technologies, as well as mode shapes corresponding to Spurious1, Spurious2, and Spurious3. Figure 3 The images, from top to bottom, show a top view of the surface acoustic wave device, the mode shapes of Spurious1, Spurious2, and Spurious3. The mode shapes confirm that all three modes are transverse modes, but there are significant differences in their behavior at the fingertips of the electrode fingers. Specifically, from... Figure 3 It can be seen that the colors of the Spurious 1 and Spurious 2 in the gap area outside the fingertip of the electrode finger are generally lighter, and they are only distributed in a very narrow area close to the edge. This is consistent with the distribution characteristics of traditional transverse dies. Therefore, the Spurious 1 and Spurious 2 can be suppressed by adjusting the width or thickness of the fingertip. However, the Spurious 3 is widely distributed in the gap area outside the fingertip of the electrode finger, which is obviously different from the Spurious 1 and Spurious 2. Therefore, the Spurious 3 cannot be suppressed by adjusting the width or thickness of the fingertip.

[0024] Therefore, based on the above, in order to further distinguish the above-mentioned heterogeneous modes, in the embodiments of this application, heterogeneous modes Spurious1, Spurious2, and Spurious3 can be further understood and distinguished into two types of heterogeneous modes by their energy distribution characteristics in the gap region. The first type of heterogeneous mode has a narrow energy distribution in the gap region, and the energy is mainly distributed in the gap region near the fingertip region of the electrode finger. The energy distribution of this type of heterogeneous mode is narrow in the gap region and close to the fingertip region, such as the heterogeneous modes Spurious1 and Spurious2 mentioned above. The second type of heterogeneous mode has a wide energy distribution in the gap region, such as the heterogeneous mode Spurious3 mentioned above.

[0025] Furthermore, in order to further determine the effect of the suppression structure on the heterogeneous modes Spurious1, Spurious2, and Spurious3, and to better illustrate the two different types of heterogeneous modes, the suppression structure (piston) set on the tip of the electrode finger was adjusted, that is, the width or thickness of the suppression structure at the tip of the electrode finger was adjusted, and the effect of the suppression structure on the heterogeneous modes Spurious1, Spurious2, and Spurious3 was verified.

[0026] It can be seen that, as Figure 4 and Figure 5 As shown, Figure 4 This is a schematic diagram of the harmonic admittance curve of the surface acoustic wave device after optimization of the suppression structure. Figure 5 This is a schematic diagram comparing the real part admittance curves of the surface acoustic wave device before and after optimization of the suppression structure. Figure 4 and Figure 5 It can be seen that after optimizing the suppression structure, Spurious modes 1 and 2 are sufficiently suppressed, but Spurious mode 3 only undergoes a frequency shift without a significant change in intensity. This indicates that setting the suppression structure at the electrode fingertip can only suppress Spurious modes 1 and 2 (i.e., the first type of miscellaneous mode), but cannot suppress Spurious mode 3 (i.e., the second type of miscellaneous mode). Therefore, even with multiple optimizations and the setting of the suppression structure at the electrode fingertip, some miscellaneous modes (the second type of miscellaneous mode) will still exist that cannot be effectively suppressed, resulting in the miscellaneous mode suppression effect of the surface acoustic wave device still failing to meet the requirements of practical applications. Since surface acoustic wave devices may simultaneously exhibit both the first and second types of miscellaneous modes in some application scenarios, the embodiments of this application aim to achieve simultaneous suppression of both types of miscellaneous modes.

[0027] like Figure 6 As shown, Figure 6This is a top view of the optimized surface acoustic wave device and a schematic diagram of the mode shape corresponding to the Spurious3 mode. Figure 6 In the image, from top to bottom, are a top view of the optimized surface acoustic wave device and a mode shape diagram of Spurious3. Figure 3 Comparing the mode shapes of Spurious3 in the model, the mode shapes of Spurious3 before and after optimization are similar, which further illustrates that even if a suppression structure is set at the electrode fingertip and multiple optimizations are performed, there will still be some non-suppressible stray modes (type II stray modes), which will result in the stray mode suppression effect of the surface acoustic wave device still not meeting the requirements of practical applications.

[0028] In order to suppress the first and second types of clutter modes mentioned above, this application provides a surface acoustic wave device and an RF front-end module. By taking advantage of the characteristic that the second type of clutter mode easily intrudes into the gap region, the second type of clutter mode is specifically suppressed, thereby achieving simultaneous suppression of the first and second types of clutter modes, and thus comprehensively improving the clutter mode suppression effect of the surface acoustic wave device.

[0029] Please see Figure 7 This application provides a surface acoustic wave device, the surface acoustic wave device 100 includes a piezoelectric substrate 10, an interdigital transducer 20, a first suppression structure 30 and a second suppression structure 40.

[0030] like Figure 7 As shown, an interdigital transducer 20 is disposed on the surface of a piezoelectric substrate 10. The interdigital transducer 20 includes busbars 21 disposed opposite to each other, and a plurality of electrode fingers 22 connected to and spaced apart from the busbars 21. The plurality of electrode fingers 22 are arranged alternately. In a first direction, there is an overlapping region A between two busbars 21. The overlapping region A is the region where the projections of the plurality of electrode fingers 22 overlap in a second direction. A gap region B is formed between the overlapping region A and the busbars 21. The gap region B is the region between the busbars 21 and the overlapping region A in the first direction, where the first direction is the extension direction of the electrode fingers 22 (i.e., the direction of extension of the electrode fingers 22). Figure 7 The first direction is the lateral direction), and the second direction is the arrangement direction of the electrode fingers 22 (i.e., the lateral direction). Figure 7 (in the vertical direction).

[0031] It should be noted that since the interdigital transducer 20 includes two busbars 21 arranged opposite to each other, the overlapping area A and the two busbars 21 each form a gap area B.

[0032] For example, the material of the piezoelectric substrate 10 may include at least one of lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and POI substrate, without being specifically limited herein.

[0033] For example, the interdigital transducer 20 is disposed on the surface of the piezoelectric substrate 10. The interdigital transducer 20 includes a busbar 21 disposed opposite to each other, and a plurality of electrode fingers 22 connected to the busbar 21 and disposed at intervals, with the plurality of electrode fingers 22 arranged alternately to each other.

[0034] For example, electrode fingers 22 are typically rectangular. However, the cross-section of electrode fingers 22 formed under certain process conditions may be trapezoidal. Generally, the extension direction of the long side of an electrode finger 22 is perpendicular to the extension direction of the busbar 21, and multiple electrode fingers 22 are parallel to each other, with a certain gap between adjacent electrode fingers 22. In this embodiment of the invention, electrode fingers 22 need to contact a busbar 21 to achieve electrical connection. The duty cycle of the electrode fingers 22 can be 0.25-0.75, for example, 0.25, 0.3, 0.4, 0.5, 0.6, 0.75, etc., where the duty cycle (metallization ratio) is the proportion of the width of a single electrode finger 22 to the pitch, and the pitch is the distance between the centerlines of two adjacent electrode fingers in the second direction.

[0035] It should be noted that the cross-section of electrode finger 22 can also be a regular trapezoid or an inverted trapezoid, without any specific limitation here.

[0036] For example, the materials of the busbar 21 and the electrode finger 22 may include one or more of the following metals: aluminum, molybdenum, copper, gold, platinum, silver, nickel, chromium, tungsten, titanium, etc. There is no specific limitation here, and it can be determined according to the specific situation. However, the selected materials need to have good conductivity.

[0037] The first suppression structure 30 is located in the gap region B. For example, the first suppression structure 30 may be disposed on the piezoelectric substrate 10 located in the gap region B, or the first suppression structure 30 may be disposed on or overlap with the electrode finger 22 located in the gap region B, or the first suppression structure 30 may be disposed on both the piezoelectric substrate 10 located in the gap region B and the electrode finger 22, or overlap with the electrode finger. No specific limitation is made here.

[0038] Specifically, the gap region B may include multiple first suppression structures 30. The multiple first suppression structures 30 may be arranged adjacent to each other or spaced apart from each other, without any specific limitation here.

[0039] For example, the first suppression structure 30 can be a mass block, and the material of the mass block can be a metallic material, such as any one or more of aluminum, molybdenum, copper, gold, platinum, silver, nickel, chromium, and tungsten. Alternatively, the first suppression structure 30 can also be a dielectric block, and the material of the dielectric block can be an insulating material, such as silicon dioxide. Or, the first suppression structure 30 can be composed of both a mass block and a dielectric block; for example, part of the first suppression structure 30 can be a mass block, and part of the first suppression structure 30 can be a dielectric block, without specific limitations. Therefore, the material of the first suppression structure 30 can be selected according to actual needs, thereby ensuring a good suppression effect on the first type of miscellaneous mold while also effectively suppressing the second type of miscellaneous mold.

[0040] It should be noted that the material of the first suppression structure 30 may be the same as or different from the material of the busbar 21 and the electrode finger 22; no specific limitation is made here.

[0041] Specifically, the surface acoustic wave device 100 includes a plurality of first suppression structures 30, and the plurality of first suppression structures 30 can be randomly distributed in two gap regions B. The projections of two adjacent first suppression structures 30 in a first direction do not completely overlap, and the projections of two adjacent first suppression structures 30 in a second direction do not completely overlap, the second direction being the arrangement direction of the electrode fingers 22 (i.e., Figure 7 (in the vertical direction).

[0042] Specifically, two adjacent first suppression structures 30 can be the two closest first suppression structures 30 within the same gap region B; alternatively, two adjacent first suppression structures 30 can be the two closest first suppression structures 30 within different gap regions B. In the embodiments of this application, both of the above cases can be considered as two adjacent first suppression structures 30.

[0043] For example, taking the case where two adjacent first suppression structures 30 are located in the same gap region B, the projections of the two adjacent first suppression structures 30 in the first direction do not completely overlap, that is, the projections of the two adjacent first suppression structures 30 in the first direction do not overlap at least partially; and the projections of the two adjacent first suppression structures 30 in the second direction also do not completely overlap, that is, the projections of the two adjacent first suppression structures 30 in the second direction do not overlap at least partially. Therefore, in the same gap region B, the positions of the two adjacent first suppression structures 30 are not aligned in either the first or second direction, resulting in the two adjacent first suppression structures 30 located in the same gap region B being randomly and irregularly distributed in the gap region B. This prevents the gap region B from forming a clear resonant cavity or prevents the formed resonant cavities from overlapping to form a strong heterogeneous mode. Therefore, by simultaneously setting the first suppression structure 30 and the second suppression structure 40, this application can ensure a good suppression effect on the first type of heterogeneous mode while also effectively suppressing the second type of heterogeneous mode.

[0044] For example, taking the case where the first suppression structure 30 is located in different gap regions B, the projections of two adjacent first suppression structures 30 in the first direction do not completely overlap, that is, the projections of two adjacent first suppression structures 30 in the first direction do not overlap at least partially. Simultaneously, since the two gap regions B are arranged opposite each other in the first direction, the projections of two adjacent first suppression structures 30 in different gap regions B in the second direction will inevitably not overlap. Therefore, in different gap regions B, the positions of two adjacent first suppression structures 30 are not aligned in either the first or second direction, resulting in a disorderly and irregular distribution of adjacent first suppression structures 30 in different gap regions B. This prevents gap regions B from forming obvious resonant cavities or ensures that the formed resonant cavities do not overlap to form strong heterogeneous modes. Therefore, by simultaneously setting the first suppression structure 30 and the second suppression structure 40, this application can ensure a good suppression effect on the first type of heterogeneous mode while also effectively suppressing the second type of heterogeneous mode.

[0045] It should be noted that, in the embodiments of this application, regardless of whether they are in the same gap region B or in different gap regions B, the projections of two adjacent first suppression structures 30 in the first direction do not completely overlap, and the projections of any two adjacent first suppression structures 30 in the second direction do not completely overlap, thereby ensuring that the two adjacent first suppression structures 30 are randomly and irregularly distributed in the gap region B.

[0046] To suppress second-type clutter modes, this application provides a surface acoustic wave device 100 and an RF front-end module. Utilizing the characteristic that second-type clutter modes easily intrude into the gap region B, the projections of two adjacent first suppression structures 30 in the first and second directions are not completely overlapped. This results in the adjacent first suppression structures 30 being asymmetrically arranged at least in the first and second directions, meaning that the two adjacent first suppression structures 30 are randomly distributed within the gap region B. Because the adjacent first suppression structures 30 are randomly and irregularly distributed within the gap region B, the gap region B cannot form a distinct resonant cavity, or the formed resonant cavities will not overlap to form a strong clutter mode. This effectively suppresses second-type clutter modes (such as clutter mode Spurious3). Simultaneously, since the energy of first-type clutter modes (such as clutter modes Spurious1 and Spurious2) intrudes less into the gap region B, the arrangement of the first suppression structures 30 will not have a significant adverse effect on other transverse modes. Therefore, the overall effect of clutter mode suppression of the surface acoustic wave device 100 can be improved.

[0047] like Figure 7 As shown, in some embodiments, the overlapping region A includes a middle region A1 and an edge region A2 located on both sides of the middle region A1 in a first direction; the surface acoustic wave device 100 also includes a second suppression structure 40, which is disposed on the electrode finger 22 of the edge region A2.

[0048] For example, the second suppression structure 40 is located in the edge region A2; wherein, within the same edge region A2, the second suppression structure 40 can be disposed on one or both sides of the electrode finger 22 in the width direction of the electrode finger 22 in the edge region A2, or disposed in the thickness direction of the electrode finger 22 in the edge region A2, or disposed on both sides of the electrode finger 22 in the edge region A2, thereby effectively changing the sound velocity in the corresponding region according to different needs, thereby effectively suppressing the first type of miscellaneous mode.

[0049] For example, the projection of the second suppression structure 40 in the thickness direction of the surface acoustic wave device 100 is located within the projection of the electrode finger 22 in the thickness direction of the surface acoustic wave device 100 in the edge region A2. Since the second suppression structure 40 is disposed on the side of the electrode finger 22 away from the piezoelectric substrate 10, that is, the second suppression structure 40 is disposed in the thickness direction of the electrode finger 22, the second suppression structure 40 can also be considered as a thickening structure for the electrode.

[0050] It should be noted that the second suppression structure 40 can also be disposed in the width direction (such as the second direction) of the electrode finger 22. In this case, the electrode finger 22 is effectively widened. For example, the second suppression structure 40 can be located on the left side of the electrode finger 22, or on the right side of the electrode finger 22, or simultaneously on both the left and right sides of the electrode finger 22. No specific limitation is made here. In one embodiment, the second suppression structure 40 can be symmetrically disposed relative to the electrode finger 22. The second suppression structure 40 can also be disposed in the thickness direction of the electrode finger 22. In this case, the electrode finger 22 is effectively thickened. For example, the second suppression structure 40 can be located above the electrode finger 22, or below the electrode finger 22, or simultaneously above and below the electrode finger 22. No specific limitation is made here. The length, thickness, width, and placement position of the second suppression structure 40 can be set according to actual needs and are not specifically limited here.

[0051] In one embodiment, when setting the second suppression structure 40 provided in this application, the same type of second suppression structure 40 can be set in the interdigital transducers of the same resonator, such as setting a thickened structure on all electrode fingers, or setting it on both sides of all electrode fingers. In another example, in the same resonator, a thickened structure and a widened structure are simultaneously set on the electrode fingers, as detailed in [link to relevant documentation]. Figure 7 In this design, the second suppression structure 40 is directly disposed on some of the electrode fingers, thus forming a thickened structure, while the second suppression structure 40 is disposed on both sides of some of the electrode fingers. Preferably, in order to better avoid the formation of strong common resonance in different gap regions, and at the same time to better ensure the suppression effect of miscellaneous modes, in this application, the second suppression structure 40 forming the thickened structure is disposed on two adjacent electrode fingers, and the second suppression structure 40 forming the widened structure is disposed on two other adjacent electrode fingers, and the thickened and widened electrodes are arranged sequentially. By differentiating the fingertips of different electrode fingers, the formation of strong common resonance in different gap regions can be avoided, while the suppression effect of miscellaneous modes can be effectively improved.

[0052] In this embodiment, by simultaneously setting a first suppression structure 30 and a second suppression structure 40, and by distributing adjacent first suppression structures 30 randomly and irregularly within the gap region B, and by giving them different fill rates, the gap region B cannot form a distinct resonant cavity, or the resonant cavities formed will not overlap to form a strong heterodyne mode. This effectively suppresses the second type of heterodyne mode (such as heterodyne mode Spurious3). At the same time, because the first suppression structures 30 are randomly and irregularly distributed within the gap region B, the fill rates of the two relatively set gap regions are different, further improving the suppression effect on the second type of heterodyne mode. In addition, the setting of the second suppression structure 40 can also effectively suppress the first type of heterodyne mode. Thus, the overall effect of the surface acoustic wave device 100 can be improved simultaneously for both the first and second types of heterodyne modes, effectively reducing the in-band ripple of the surface acoustic wave device 100 and making the passband of the surface acoustic wave device 100 more stable.

[0053] In some embodiments, the projections of two adjacent first suppression structures 30 in the first direction and the second direction do not completely overlap.

[0054] For example, taking the case where two adjacent first suppression structures 30 are located in different gap regions B, the projections of the two adjacent first suppression structures 30 in the first direction do not overlap at all; that is, the projections of the two adjacent first suppression structures 30 in the first direction do not overlap. Simultaneously, since the two gap regions B are arranged opposite each other in the first direction, the projections of the two adjacent first suppression structures 30 in different gap regions B in the second direction will necessarily not overlap. Therefore, in different gap regions B, the positions of the two adjacent first suppression structures 30 are differentiated in both the first and second directions, resulting in a significant difference in the positions of the two adjacent first suppression structures 30 located in the same gap region B. This leads to a more disordered and irregular distribution of the two adjacent first suppression structures 30 within the gap region B, further preventing the formation of a distinct resonant cavity in the gap region B or preventing the formation of strong heterogeneous modes by overlapping resonant cavities, thus further improving the suppression effect on the second type of heterogeneous modes.

[0055] For example, taking the case where two adjacent first suppression structures 30 are located in different gap regions B, within the same gap region B, the projections of the two adjacent first suppression structures 30 in the first direction do not overlap at all; that is, the projections of the two adjacent first suppression structures 30 in the first direction do not overlap. Furthermore, the projections of the two adjacent first suppression structures 30 in the second direction also do not overlap at all. Therefore, within the same gap region B, the positions of the two adjacent first suppression structures 30 are differentiated in both the first and second directions, resulting in significant positional differences between the two adjacent first suppression structures 30 within the same gap region B. This leads to a more disordered and irregular distribution of the two adjacent first suppression structures 30 within the gap region B, further preventing the formation of a distinct resonant cavity in the gap region B or preventing the formation of strong heterogeneous modes by overlapping resonant cavities, thus further improving the suppression effect on the second type of heterogeneous modes.

[0056] In some embodiments, the projections of any two first suppression structures 30 in the first direction and the second direction do not completely overlap.

[0057] For example, the projections of any two first suppression structures 30 in the first direction do not completely overlap, that is, the projections of any two first suppression structures 30 in the first direction do not overlap at least partially; and the projections of any two first suppression structures 30 in the second direction also do not completely overlap, that is, the projections of any two first suppression structures 30 in the second direction do not overlap at least partially. Therefore, the positions of any two first suppression structures 30 are not aligned in either the first or second direction, so that all the first suppression structures 30 are randomly and irregularly distributed in the gap region B, thereby preventing the gap region B from forming a distinct resonant cavity or preventing the formed resonant cavities from overlapping to form a strong heterodyne mode.

[0058] like Figure 7 As shown, in some embodiments, the gap region B further includes multiple modulation regions B1. Each modulation region B1 is a region within the gap region B between two adjacent electrode fingers 22 connected to the same busbar 21, and is located on the side closer to the busbar 21. The fill rates of adjacent modulation regions B1 are different, and the fill rate of modulation region B1 is the ratio of the area of ​​the first suppression structure 30 to the area of ​​the modulation region B1. In one example, the fill rates of any two adjacent modulation regions B1 are different; in another example, the fill rates of some adjacent modulation regions B1 are different, and the fill rates of some adjacent modulation regions B1 can be the same. No specific limitation is made here. It should be noted that, as... Figure 7As shown, the gap region B adjacent to different busbars 21 can include multiple modulation regions B1, and in the first direction, the modulation region B1 and the protection region B2 together form the gap region B.

[0059] In this context, adjacent modulation regions B1 can be the two closest modulation regions B1 within the same gap region B; alternatively, adjacent modulation regions B1 can be two modulation regions B1 positioned opposite each other in different gap regions B. In the embodiments of this application, both of these cases can be considered as adjacent modulation regions B1.

[0060] For example, the fill rates of two adjacent modulation regions B1 are different, that is, the total area of ​​the first suppression structure 30 in one modulation region B1 is different from the total area of ​​the first suppression structure 30 in the adjacent modulation region B1. By controlling the different fill rates of two adjacent modulation regions B1, the first suppression structures 30 in the two adjacent modulation regions B1 can be differentiated, so that the first suppression structures 30 in the two adjacent modulation regions B1 are randomly and irregularly distributed in the corresponding modulation regions B1. This further ensures that the gap regions B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap to form strong heterogeneous modes. While ensuring a good suppression effect on the first type of heterogeneous mode, it is also beneficial to improve the suppression effect on the second type of heterogeneous mode.

[0061] like Figure 8 As shown, exemplarily, taking a gap region B comprising an adjacent first modulation region C1, a second modulation region C2, and a third modulation region C3 as an example, the first modulation region C1 and the second modulation region C2 are located in the same gap region B, while the first modulation region C1 and the third modulation region C3 are located in different gap regions B. In this embodiment, the fill rates of the first modulation region C1 and the second modulation region C2 are different, and the fill rates of the first modulation region C1 and the third modulation region C3 are also different.

[0062] In some embodiments, the number of first suppression structures 30 in one modulation region B1 is different from the number of first suppression structures 30 in another modulation region B1; and / or, the shape of the first suppression structure 30 in one modulation region B1 is different from the shape of the first suppression structure 30 in another modulation region B1.

[0063] For example, the number of first suppression structures 30 in one modulation region B1 can be greater than the number of first suppression structures 30 in another modulation region B1, and the number of first suppression structures 30 in one modulation region B1 can also be less than the number of first suppression structures 30 in another modulation region B1, as long as the number of first suppression structures 30 in one modulation region B1 is different from the number of first suppression structures 30 in another modulation region B1, thereby making the filling rates of the two adjacent modulation regions B1 different. In this embodiment of the application, by making the number of first suppression structures 30 different, their resonance and synergistic effect on sound waves are disrupted, thereby ensuring a good suppression effect on the first type of miscellaneous modes while further improving the suppression effect on the second type of miscellaneous modes.

[0064] For example, the shape of the first suppression structure 30 within a modulation region B1 can be the projection shape of the first suppression structure 30 in the thickness direction of the surface acoustic wave device 100. The shape of the first suppression structure 30 within the modulation region B1 can be rectangular, circular, trapezoidal, irregular, etc. It should be noted that in two adjacent modulation regions B1, at least one of the first suppression structures 30 needs to have a different shape, so that the filling rate of the two adjacent modulation regions B1 is different; no specific limitation is made here. In this embodiment, by making the outer contour shape of the first suppression structure 30 different, its resonance and synergistic effect on the sound wave are disrupted, thereby ensuring a good suppression effect on the first type of miscellaneous mode while further improving the suppression effect on the second type of miscellaneous mode.

[0065] It should be noted that only the number of the first suppression structure 30 in one modulation region B1 can be controlled to be different from the number of the first suppression structure 30 in another modulation region B1; only the shape of the first suppression structure 30 in one modulation region B1 can be controlled to be different from the shape of the first suppression structure 30 in another modulation region B1; preferably, both the number and shape of the first suppression structure 30 in one modulation region B1 and the number and shape of the first suppression structure 30 in another modulation region B1 can be controlled to be different, so that the filling rate difference between the two adjacent modulation regions B1 is greater, and further so that the gap regions B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap each other to form strong heterogeneous modes. Thus, while ensuring a good suppression effect on the first type of heterogeneous mode, it is beneficial to improve the suppression effect on the second type of heterogeneous mode.

[0066] In some embodiments, the fill rate difference between two adjacent modulation regions B1 is less than or equal to 50%.

[0067] For example, the fill rate difference between two adjacent modulation regions B1 can be 5%, 10%, 15%, 20%, 30%, 40%, and 50%, etc. By controlling the fill rate difference between two adjacent modulation regions B1 to be less than or equal to 50%, the fill rates of the two adjacent modulation regions B1 can have a certain difference, further ensuring that the gap regions B in which they are located cannot form obvious resonant cavities or that the resonant cavities formed will not overlap to form strong heterogeneous modes. This ensures excellent suppression of the first type of heterogeneous mode while also improving the suppression of the second type of heterogeneous mode.

[0068] Preferably, the fill rate difference between two adjacent modulation regions B1 can be 10%-15%, such as 10%, 12%, 13%, and 15%. By further controlling the fill rate difference between two adjacent modulation regions B1 to 10%-15%, the difference in fill rate between the two adjacent modulation regions B1 can be controlled within a preferred range. This ensures that the gap regions B in which they are located cannot form obvious resonant cavities, or that the resonant cavities formed will not overlap to form strong clutter modes, thus guaranteeing excellent suppression effects for both the first and second types of clutter modes.

[0069] like Figure 8 As shown, exemplarily, taking a gap region B comprising an adjacent first modulation region C1, a second modulation region C2, and a third modulation region C3 as an example, the first modulation region C1 and the second modulation region C2 are located in the same gap region B, while the first modulation region C1 and the third modulation region C3 are located in different gap regions B. In this embodiment, the difference in fill rate between the first modulation region C1 and the second modulation region C2 is less than or equal to 50%, and the difference in fill rate between the first modulation region C1 and the third modulation region C3 is also less than or equal to 50%.

[0070] like Figure 8 As shown, in some embodiments, along the second direction, the modulation region B1 includes a first modulation region C1 and a second modulation region C2 disposed adjacent to the first modulation region C1; wherein, the first modulation region C1 includes a first sub-suppression structure 31, the second modulation region C2 includes a second sub-suppression structure 32, and the length of the first sub-suppression structure 31 in the second direction is greater than the length of the second sub-suppression structure 32 in the second direction.

[0071] For example, the first modulation region C1 may include one or more first sub-suppression structures 31, and the second modulation region C2 may include one or more second sub-suppression structures 32. By controlling the length of the first sub-suppression structure 31 in the second direction to be greater than the length of the second sub-suppression structure 32 in the second direction, the surfaces of the gap regions B facing the first and second sub-suppression structures 31 and 32 are differentiated. This allows the first and second sub-suppression structures 31 and 32 to achieve structural differentiation, disrupting the structural symmetry or periodicity of the first and second sub-suppression structures 31 and 32. This avoids the common resonance of each first suppression structure 30, thereby achieving different disturbance amplitudes. This prevents the formation of certain originally symmetrical clutter modes, ensuring that the gap regions B in which they are located cannot form obvious resonant cavities or that the formed resonant cavities will not overlap to form strong clutter modes, which is beneficial for improving the suppression effect on the second type of clutter modes.

[0072] It should be noted that the length of the first sub-suppression structure 31 in the first direction can be greater than the length of the second sub-suppression structure 32 in the first direction, and the length of the first sub-suppression structure 31 in the first direction can also be less than or equal to the length of the second sub-suppression structure 32 in the first direction, without specific limitations here.

[0073] like Figure 8 As shown, in some embodiments, modulation region B1 further includes a third modulation region C3, which is disposed on the opposite side of the first modulation region C1 and the second modulation region C2 and close to another busbar 21; wherein, the fill rate difference between the first modulation region C1 and the second modulation region C2 is greater than the fill rate difference between the first modulation region C1 and the third modulation region C3; and the fill rate difference between the first modulation region C1 and the third modulation region C3 is greater than the fill rate difference between the second modulation region C2 and the third modulation region C3.

[0074] For example, the third modulation region C3 may include one or more third sub-suppression structures 33. The length of the first sub-suppression structure 31 in the second direction may also be greater than the length of the third sub-suppression structure 33 in the second direction.

[0075] Specifically, the fill rates of the first modulation region C1, the second modulation region C2, and the third modulation region C3 are all different, that is, the fill rates of the first modulation region C1, the second modulation region C2, and the third modulation region C3 are all different.

[0076] For example, by controlling the fill rate difference between the first modulation region C1 and the second modulation region C2 to be greater than the fill rate difference between the first modulation region C1 and the third modulation region C3, and the fill rate difference between the first modulation region C1 and the third modulation region C3 to be greater than the fill rate difference between the second modulation region C2 and the third modulation region C3, differentiated settings can be achieved within each modulation region B1. This allows the fill rate difference of modulation regions B1 within the same gap region B to be greater than the fill rate difference of modulation regions B1 within different gap regions B, further increasing the difference between each modulation region B1. This prevents the gap regions B in which they are located from forming obvious resonant cavities, or prevents the formed resonant cavities from overlapping and forming strong clutter modes, which is beneficial for improving the suppression effect on the second type of clutter modes.

[0077] like Figure 8 As shown, in some embodiments, within the modulation region B1, the fill rate on the side closer to the overlapping region A is greater than the fill rate on the side closer to the busbar 21.

[0078] Since the second type of miscellaneous modes are mainly miscellaneous modes leaking from the overlapping region A to the gap region B, within the same modulation region B1, by controlling the fill rate on the side closer to the overlapping region A to be greater than the fill rate on the side closer to the busbar 21, the first suppression structure 30 is positioned as close as possible to the overlapping region A. This effectively binds the second type of miscellaneous modes that originally leaked into the gap region B to the overlapping region A, which helps to reduce the energy leakage of the second type of miscellaneous modes. As a result, the gap regions B where the second type of miscellaneous modes are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap each other to form strong miscellaneous modes, which helps to improve the suppression effect on the second type of miscellaneous modes.

[0079] For example, within the same modulation region B1, the number of first suppression structures 30 provided near the overlapping region A is greater than the number of first suppression structures 30 provided near the busbar 21; or, the area of ​​the first suppression structure 30 provided near the overlapping region A is greater than the area of ​​the first suppression structure 30 provided near the busbar 21. As long as the fill rate on the side near the overlapping region A is greater than the fill rate on the side near the busbar 21, no specific limitation is made here.

[0080] In some embodiments, the areas of two adjacent first suppression structures 30 are different.

[0081] For example, within the same modulation region B1, the areas of two adjacent first suppression structures 30 can be different, thereby enabling differentiated settings of the first suppression structures 30 within the same modulation region B1. This prevents the formation of obvious resonant cavities in the gap region B where they are located, or prevents the formed resonant cavities from overlapping to form strong heterogeneous modes. This ensures a good suppression effect on the first type of heterogeneous modes while also improving the suppression effect on the second type of heterogeneous modes.

[0082] For example, the areas of two adjacent first suppression structures 30 can be different in different modulation regions B1, so that the first suppression structures 30 can also be differentiated in different modulation regions B1, so that the gap regions B in different modulation regions B1 cannot form obvious resonant cavities or the resonant cavities formed will not overlap to form strong clutter modes, which is beneficial to improving the suppression effect on the second type of clutter modes.

[0083] In some embodiments, multiple first suppression structures 30 are spaced apart within the same gap region B, and the fill rate of the gap region B is less than or equal to 50%, wherein the fill rate of the gap region B is the ratio of the area of ​​the first suppression structure 30 to the area of ​​the gap region B.

[0084] For example, within the same gap region B, multiple first suppression structures 30 are spaced apart, and the fill rate of the gap region B can be 20%, 25%, 30%, 35%, 40%, 45%, and 50%, etc. By controlling the multiple first suppression structures 30 within the same gap region B to be spaced apart, and controlling the fill rate of the gap region B to be less than or equal to 50%, it is beneficial to ensure that none of the gap regions B contain obvious resonant cavities, or that the resonant cavities formed do not overlap to form strong heterodynes, thereby improving the suppression effect on the second type of heterodynes.

[0085] like Figure 9 As shown, in some embodiments, the first suppression structure 30 includes an opening 34 that is disposed toward the overlapping region A.

[0086] For example, the first suppression structure 30 is located in the gap region B and is connected to the adjacent busbar 21. It should be noted that when the first suppression structure 30 and the busbar 21 are fabricated simultaneously, the first suppression structure 30 will be at least partially connected to the adjacent busbar 21, and the material of the first suppression structure 30 is the same as the material of the busbar 21.

[0087] For example, the first suppression structure 30 may include one or more openings 34, at least one opening 34 being positioned toward the overlapping region A, thereby confining the second type of miscellaneous modes leaking into the gap region B at the opening 34, which helps to reduce the energy leakage of the second type of miscellaneous modes, so that the gap region B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap each other to form strong miscellaneous modes, which helps to improve the suppression effect on the second type of miscellaneous modes.

[0088] For example, when the first suppression structure 30 includes a plurality of openings 34, the projections of two adjacent openings 34 in the first direction do not completely overlap, and the projections of two adjacent openings 34 in the second direction do not completely overlap, so that the adjacent openings 34 in the first suppression structure 30 are randomly and irregularly distributed, thereby preventing the gap region B from forming an obvious resonant cavity or preventing the formed resonant cavities from superimposing on each other to form a strong miscellaneous mode, further improving the suppression effect on the second type of miscellaneous mode.

[0089] For example, when the first suppression structure 30 includes multiple openings 34, the fill rate of the gap region B can be greater than 50%, and the fill rate of the gap region B is the ratio of the area of ​​the first suppression structure 30 to the area of ​​the gap region B. For example, the fill rate of the gap region B can be 55%, 65%, 70%, 75%, 80%, 85%, and 90%, etc. By controlling the first suppression structure 30 to include multiple openings 34 and the fill rate of the gap region B to be greater than 50%, it is beneficial to reduce the energy leakage of the second type of miscellaneous mode, so that the gap regions B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap to form strong miscellaneous modes, thereby improving the suppression effect on the second type of miscellaneous mode.

[0090] For example, within the same gap region B, the area of ​​the opening 34 can be the same or different, and the shape of the opening 34 can be the same or different, without specific limitations. Therefore, in this embodiment, the filling rate of the gap region B can be controlled by controlling parameters such as the area and shape of the opening 34, thereby ensuring a good suppression effect on the first type of miscellaneous mold while also effectively suppressing the second type of miscellaneous mold.

[0091] like Figure 7 As shown, in some embodiments, the gap region B includes a modulation region B1, which is adjacent to the busbar 21 and spaced apart from the overlapping region A; wherein the length of the modulation region B1 in the first direction is less than or equal to 2λ, and λ is twice the center distance length of adjacent electrode fingers in the second direction.

[0092] For example, the modulation region B1 is adjacent to the busbar 21 and spaced apart from the overlapping region A. The length of the modulation region B1 in the first direction can be 0.1λ, 0.5λ, 0.8λ, λ, 1.2λ, 1.5λ, 1.8λ, and 2λ, etc., without specific limitation. By controlling the length of the modulation region B1 in the first direction to be less than or equal to 2λ, it can be ensured that the first suppression structure 30 located in the modulation region B1 has excellent suppression effect on the second type of miscellaneous mold, while also facilitating the miniaturization of the surface acoustic wave device 100.

[0093] like Figure 7 As shown, in some embodiments, within the same gap region B, the gap region B further includes a protection region B2, which is adjacent to the modulation region B1 and adjacent to the overlapping region A; wherein, the length of the protection region B2 in the first direction is less than or equal to 0.3λ.

[0094] For example, the protection region B2 is adjacent to the modulation region B1, and the protection region B2 is also adjacent to the overlapping region A. The length of the protection region B2 in the first direction can be 0.05λ, 0.1λ, 0.15λ, 0.18λ, 0.2λ, 0.23λ, 0.25λ, 0.28λ, and 0.3λ, etc., without specific limitation. By controlling the length of the protection region B2 in the first direction to be less than or equal to 0.3λ, the situation where the second type of specular distortion is difficult to leak into the modulation region B1 for suppression due to the excessive size of the protection region B2 can be avoided. This effectively ensures that the first suppression structure 30 located in the modulation region B1 has an excellent suppression effect on the second type of specular distortion.

[0095] It should be noted that, in order to ensure that the first suppression structure 30 located in the modulation region B1 effectively suppresses the second type of noise mode, the length of the protection region B2 in the first direction can be controlled to be less than the length of the modulation region B1 in the first direction, so that the second type of noise mode leaks into the modulation region B1 and is effectively suppressed, effectively preventing the second type of noise mode from residing in the gap region B.

[0096] like Figure 10 and Figure 11 As shown, in some embodiments, the surface acoustic wave device 100 further includes an intermediate electrode 23 located within the protection region B2, and the length of the intermediate electrode 23 in the second direction is greater than the length of the first suppression structure 30 in the second direction.

[0097] like Figure 10As shown, when multiple first suppression structures 30 are provided at intervals in the gap region B and the filling rates of adjacent gap regions B are different, the surface acoustic wave device 100 may further include an intermediate electrode 23 located in the protection region B2. The intermediate electrode 23 is provided at intervals with the overlapping region A, and the length of the intermediate electrode 23 in the second direction is greater than the length of the first suppression structure 30 in the second direction.

[0098] like Figure 11 As shown, when the first suppression structure 30 is provided with an opening 34, the surface acoustic wave device 100 may further include an intermediate electrode 23 located in the protection region B2. The intermediate electrode 23 is spaced apart from both the overlapping region A and the first suppression structure 30, and the length of the intermediate electrode 23 in the second direction is greater than the length of the first suppression structure 30 in the second direction.

[0099] In some embodiments, the fill rate of the protection region B2 is greater than the fill rate of the modulation region B1, the fill rate of the protection region B2 is the ratio of the area of ​​the intermediate electrode 23 to the area of ​​the protection region B2, and the fill rate of the modulation region B1 is the ratio of the area of ​​the first suppression structure 30 to the area of ​​the modulation region B1.

[0100] For example, within the same gap region B, the fill rate of the guard region B2 is greater than that of the modulation region B1, that is, the ratio of the area of ​​the intermediate electrode 23 to the area of ​​the guard region B2 is greater than the ratio of the area of ​​the first suppression structure 30 to the area of ​​the modulation region B1. This further prevents the gap region B from forming a significant resonant cavity, or prevents the formed resonant cavities from overlapping and forming strong heterodynes, thus further improving the suppression effect on the second type of heterodynes.

[0101] In some embodiments, the area of ​​the first suppression structure 30 is (0.1λ×0.1λ) to (λ×λ), where λ is twice the center-to-center distance length of adjacent electrode fingers 22 in the second direction.

[0102] For example, the projected area of ​​the first suppression structure 30 in the thickness direction can be (0.1λ×0.1λ), (0.3λ×0.3λ), (0.3λ×0.45λ), (0.5λ×0.3λ), (0.8λ×0.4λ), (0.7λ×0.9λ), (λ×λ), etc., without specific limitation. By controlling the area of ​​the first suppression structure 30 within the range of (0.1λ×0.1λ)-(λ×λ), the first suppression structure 30 has more acoustic wave action surface, allowing it to reflect the second type of miscellaneous modes leaking into the gap region B as much as possible. This helps reduce the energy leakage of the second type of miscellaneous modes and prevents the gap region B from forming a significant resonant cavity or the formed resonant cavities from overlapping to form a strong miscellaneous mode, thereby improving the suppression effect on the second type of miscellaneous modes.

[0103] like Figure 12 As shown, in some embodiments, the first suppression structure 30 includes a first connecting portion 35 and a second connecting portion 36 connected to the first connecting portion 35; wherein the extending direction of the first connecting portion 35 is the same as the first direction, and the extending direction of the second connecting portion 36 is the same as the second direction.

[0104] For example, the first suppression structure 30 is formed by combining a first connecting portion 35 and a second connecting portion 36, and the extending direction of the first connecting portion 35 is different from the extending direction of the second connecting portion 36. Specifically, the extending direction of the first connecting portion 35 is the same as the first direction, and the extending direction of the second connecting portion 36 is the same as the second direction.

[0105] It should be noted that the shape, area and other parameters of the first connecting part 35 and the second connecting part 36 may be the same or different, and no specific limitation is made here.

[0106] In some embodiments, the length of the second connecting portion 36 in the second direction is greater than the length of the first connecting portion 35 in the second direction.

[0107] Based on the distribution characteristics of the second type of miscellaneous modes in region B, which are wide and close to the overlapping region A, within the same modulation region B1, by controlling the length of the second connecting part 36 on the side close to the overlapping region A to be greater than the length of the first connecting part 35 in the second direction, and at this time the first suppression structure 30 has more acoustic wave action surface, the second connecting part 36 reflects the second type of miscellaneous modes leaking into the gap region B as much as possible, thereby helping to reduce the energy leakage of the second type of miscellaneous modes. As a result, the gap regions B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap to form strong miscellaneous modes, which is beneficial to improving the suppression effect of the second type of miscellaneous modes.

[0108] In some embodiments, the projections of two adjacent second suppression structures 40 in the second direction do not completely overlap.

[0109] For example, the length, area, shape and other parameters of two adjacent second suppression structures 40 in the second direction may be different. For instance, the length of one of the second suppression structures 40 in the second direction may be greater than the length of its adjacent second suppression structure 40 in the second direction, so that the projections of the two adjacent second suppression structures 40 in the second direction do not completely overlap.

[0110] For example, within the same edge region A2, the projections of two adjacent second suppression structures 40 in the second direction do not completely overlap; that is, the projections of two adjacent second suppression structures 40 in the second direction do not overlap at least partially. Therefore, within the same edge region A2, the positions of two adjacent second suppression structures 40 are not aligned in the second direction, thereby disrupting the structural symmetry or periodicity of each second suppression structure 40. This prevents each second suppression structure 40 from generating common resonance, thus achieving different disturbance amplitudes. This prevents the formation of certain originally symmetrical first-type miscellaneous modes, further smoothing the admittance curve. Combined with the improvement of the second-type miscellaneous modes by the first suppression structure 30, the overall miscellaneous mode suppression effect of the surface acoustic wave device 100 can be comprehensively improved, thereby effectively reducing the in-band ripple of the surface acoustic wave device 100 and making the passband of the surface acoustic wave device 100 more stable.

[0111] In some embodiments, in the first direction, the second suppression structure 40 overlaps at least with the projected portion of a first suppression structure 30.

[0112] For example, in the first direction, the length, area, shape, and other parameters of two adjacent second suppression structures 40 in the second direction can be different, so that the projections of two adjacent second suppression structures 40 in the second direction do not completely overlap. By controlling that the second suppression structure 40 overlaps at least with the projection portion of a first suppression structure 30, the synergistic effect of the first suppression structure 30 and the second suppression structure 40 can be utilized to further improve the suppression effect on the first type of miscellaneous modes and the second type of miscellaneous modes, ensuring excellent suppression effect on both the first type of miscellaneous modes and the second type of miscellaneous modes, further improving the overall miscellaneous mode suppression effect of the surface acoustic wave device 100, thereby effectively reducing the in-band ripples of the surface acoustic wave device 100 and making the passband of the surface acoustic wave device 100 more stable.

[0113] The following will provide a detailed description of another surface acoustic wave device 100 provided in the embodiments of this application.

[0114] This application provides a surface acoustic wave device 100, which includes at least a piezoelectric substrate 10, an interdigital transducer 20, a first suppression structure 30, and a second suppression structure 40.

[0115] like Figure 7As shown, an interdigital transducer 20 is disposed on the surface of a piezoelectric substrate 10. The interdigital transducer 20 includes busbars 21 disposed opposite to each other, and a plurality of electrode fingers 22 connected to and spaced apart from the busbars 21. The plurality of electrode fingers 22 are arranged alternately. In a first direction, there is an overlapping region A between two busbars 21. The overlapping region A is the region where the projections of the plurality of electrode fingers 22 overlap in a second direction. A gap region B is formed between the overlapping region A and the busbars 21. The gap region B is the region between the busbars 21 and the overlapping region A in the first direction. The first direction is the extension direction of the electrode fingers 22 (i.e., the direction of extension of the electrode fingers 22). Figure 7 The first direction is the lateral direction), and the second direction is the arrangement direction of the electrode fingers 22 (i.e., the lateral direction). Figure 7 (in the vertical direction).

[0116] It should be noted that since the interdigital transducer 20 includes two busbars 21 arranged opposite to each other, the overlapping area A and the two busbars 21 each form a gap area B.

[0117] For example, the material of the piezoelectric substrate 10 may include at least one of lithium niobate (LiNbO3), lithium tantalate (LiTaO3), and POI substrate.

[0118] For example, the interdigital transducer 20 is disposed on the surface of the piezoelectric substrate 10. The interdigital transducer 20 includes a busbar 21 disposed opposite to each other, and a plurality of electrode fingers 22 connected to the busbar 21 and disposed at intervals, with the plurality of electrode fingers 22 arranged alternately to each other.

[0119] For example, electrode fingers 22 are typically rectangular. However, the cross-section of an electrode finger 22 formed under certain process conditions may be trapezoidal. Generally, the extension direction of the long side of the electrode finger 22 is perpendicular to the extension direction of the busbar 21, and multiple electrode fingers 22 are parallel to each other, with a certain gap between adjacent electrode fingers 22. In this embodiment of the invention, the electrode finger 22 needs to contact a busbar 21 to achieve electrical connection. The duty cycle of the electrode finger 22 can be 0.25-0.75, for example, 0.25, 0.3, 0.4, 0.5, 0.6, 0.75, etc., where the duty cycle (metallization ratio) is the proportion of the width of a single electrode finger 22 to the pitch. The pitch is the distance between the centerlines of two adjacent electrode fingers in the second direction.

[0120] It should be noted that the cross-section of electrode finger 22 can also be a regular trapezoid or an inverted trapezoid, which is not specifically limited here.

[0121] For example, the materials of the busbar 21 and the electrode finger 22 may include one or more of the following metals: aluminum, molybdenum, copper, gold, platinum, silver, nickel, chromium, tungsten, titanium, etc. There is no specific limitation here, and it can be determined according to the specific situation. However, the selected materials need to have good conductivity.

[0122] The first suppression structure 30 is located in the gap region B. For example, the first suppression structure 30 can be disposed on the piezoelectric substrate 10 located in the gap region B, the first suppression structure 30 can also be disposed on the electrode finger 22 located in the gap region B, or the first suppression structure 30 can be disposed on both the piezoelectric substrate 10 located in the gap region B and the electrode finger 22, without specific limitation.

[0123] Specifically, the gap region B may include multiple first suppression structures 30. The multiple first suppression structures 30 may be arranged adjacent to each other or spaced apart from each other, without any specific limitation here.

[0124] For example, the first suppression structure 30 can be a mass block, and the material of the mass block can be a metallic material, such as any one or more of aluminum, molybdenum, copper, gold, platinum, silver, nickel, chromium, and tungsten. Alternatively, the first suppression structure 30 can also be a dielectric block, and the material of the dielectric block can be an insulating material, such as silicon dioxide. Or, the first suppression structure 30 can be composed of both a mass block and a dielectric block; for example, part of the first suppression structure 30 can be a mass block, and part of the first suppression structure 30 can be a dielectric block, without specific limitations. Therefore, the material of the first suppression structure 30 can be selected according to actual needs, thereby ensuring a good suppression effect on the first type of miscellaneous mold while also effectively suppressing the second type of miscellaneous mold.

[0125] Specifically, the surface acoustic wave device 100 includes a plurality of first suppression structures 30, with two oppositely arranged gap regions B having different filling rates. The filling rate of gap region B is the ratio of the area of ​​the first suppression structure 30 to the area of ​​gap region B. Furthermore, within the same gap region B, the projections of two adjacent first suppression structures 30 in a first direction do not completely overlap, and the projections of two adjacent first suppression structures 30 in a second direction do not completely overlap either. The second direction is the arrangement direction of the electrode fingers 22 (i.e.,...). Figure 7 (in the vertical direction).

[0126] In this embodiment, since they are in the same gap region B, the two adjacent first suppression structures 30 are the two first suppression structures 30 that are closest to each other in the same gap region B.

[0127] For example, the filling rates of the relatively set gap regions B are different, that is, the total area of ​​the first suppression structure 30 in the gap region B adjacent to one busbar 21 is different from the total area of ​​the first suppression structure 30 in the gap region B adjacent to the other busbar 21. By controlling the different filling rates of the relatively set gap regions B, the first suppression structures 30 in the two gap regions B can be differentiated, so that the first suppression structures 30 in the two gap regions B are randomly and irregularly distributed in the corresponding gap regions B. Furthermore, it is ensured that the gap regions B cannot form obvious resonant cavities or the resonant cavities formed will not overlap to form strong heterogeneous modes. By simultaneously setting the first suppression structure 30 and the second suppression structure 40, this application can ensure a good suppression effect on the first type of heterogeneous mode while also effectively suppressing the second type of heterogeneous mode.

[0128] For example, within the same gap region B, the projections of two adjacent first suppression structures 30 in the first direction do not completely overlap; that is, the projections of two adjacent first suppression structures 30 in the first direction do not overlap at least partially. Furthermore, the projections of two adjacent first suppression structures 30 in the second direction also do not completely overlap; that is, the projections of two adjacent first suppression structures 30 in the second direction do not overlap at least partially. Therefore, within the same gap region B, the positions of two adjacent first suppression structures 30 are not aligned in either the first or second direction, resulting in a disorderly and irregular distribution of adjacent first suppression structures 30 within the gap region B. This prevents the formation of a distinct resonant cavity in the gap region B, or prevents the formed resonant cavities from overlapping to form a strong heterogeneous mode. By simultaneously setting the first suppression structure 30 and the second suppression structure 40, this application can ensure a good suppression effect on the first type of heterogeneous mode while also effectively suppressing the second type of heterogeneous mode.

[0129] It should be noted that, in the embodiments of this application, within the same gap region B, the projections of any two adjacent first suppression structures 30 in the first direction do not completely overlap, and the projections of any two adjacent first suppression structures 30 in the second direction do not completely overlap, thereby ensuring that the two adjacent first suppression structures 30 are randomly and irregularly distributed within the gap region B.

[0130] To suppress second-type clutter modes, this application provides a surface acoustic wave (SAW) device 100 and an RF front-end module. Utilizing the characteristic that second-type clutter modes easily intrude into gap regions B, by controlling the different fill rates of the two gap regions B and ensuring that the projections of two adjacent first suppression structures 30 within the same gap region B do not completely overlap in the first and second directions, the distribution of the first suppression structures 30 within the two gap regions B is different. Furthermore, any two adjacent first suppression structures 30 within the same gap region B are randomly distributed. Because the adjacent first suppression structures 30 are randomly and irregularly distributed within the gap region B, the gap region B cannot form a clear resonant cavity, or the formed resonant cavities will not overlap to form a strong clutter mode. This effectively suppresses second-type clutter modes (such as clutter mode Spurious3). Simultaneously, since the energy of first-type clutter modes (such as clutter modes Spurious1 and Spurious2) intrudes into the gap region B less, the arrangement of the first suppression structures 30 will not have a significant adverse effect on other transverse modes. Therefore, the overall effect of clutter mode suppression of the SAW device 100 can be improved.

[0131] like Figure 7 As shown, in some embodiments, the overlapping region A includes a middle region A1 and an edge region A2 located on both sides of the middle region A1 in a first direction; the surface acoustic wave device 100 also includes a second suppression structure 40, which is disposed on the electrode finger 22 of the edge region A2.

[0132] For example, the second suppression structure 40 is located in the edge region A2; wherein, within the same edge region A2, the second suppression structure 40 can be disposed on one or both sides of the electrode finger 22 in the width direction of the electrode finger 22 in the edge region A2, or disposed in the thickness direction of the electrode finger 22 in the edge region A2, or disposed on both sides of the electrode finger 22 in the edge region A2, thereby effectively changing the sound velocity in the corresponding region according to different needs, thereby effectively suppressing the first type of miscellaneous mode.

[0133] For example, the projection of the second suppression structure 40 in the thickness direction of the surface acoustic wave device 100 is located within the projection of the electrode finger 22 in the thickness direction of the surface acoustic wave device 100 in the edge region A2. Since the second suppression structure 40 is disposed on the side of the electrode finger 22 away from the piezoelectric substrate 10, that is, the second suppression structure 40 is disposed in the thickness direction of the electrode finger 22, the second suppression structure 40 can also be considered as a thickening structure for the electrode.

[0134] It should be noted that the second suppression structure 40 can also be disposed in the width direction (such as the second direction) of the electrode finger 22. In this case, the electrode finger 22 is effectively widened. For example, the second suppression structure 40 can be located on the left side of the electrode finger 22, or on the right side of the electrode finger 22, or simultaneously on both the left and right sides of the electrode finger 22. No specific limitation is made here. The second suppression structure 40 can also be disposed in the thickness direction of the electrode finger 22. In this case, the electrode finger 22 is effectively thickened. For example, the second suppression structure 40 can be located above the electrode finger 22, or below the electrode finger 22, or simultaneously above and below the electrode finger 22. No specific limitation is made here. The length, thickness, width, and placement position of the second suppression structure 40 can be set according to actual needs and are not specifically limited here.

[0135] In this embodiment, by simultaneously setting a first suppression structure 30 and a second suppression structure 40, and by distributing adjacent first suppression structures 30 randomly and irregularly within the gap region B, the gap region B cannot form a distinct resonant cavity, or the formed resonant cavities will not overlap to form a strong heterodyne mode. This effectively suppresses the second type of heterodyne mode (such as heterodyne mode Spurious3). At the same time, because the first suppression structures 30 are randomly and irregularly distributed within the gap region B, the filling rates of the two relatively set gap regions are different, further improving the suppression effect on the second type of heterodyne mode. In addition, the setting of the second suppression structure 40 can also effectively suppress the first type of heterodyne mode. Thus, the overall effect of the surface acoustic wave device 100 can be improved simultaneously for both the first and second types of heterodyne modes, effectively reducing the in-band ripple of the surface acoustic wave device 100 and making the passband of the surface acoustic wave device 100 more stable.

[0136] It should be noted that the relevant structures in the embodiments of this application can be referred to the above embodiments, and will not be repeated here.

[0137] like Figure 7 As shown, in some embodiments, the gap region B further includes multiple modulation regions B1. Each modulation region B1 is a region within the gap region B between two adjacent electrode fingers 22 connected to the same busbar 21, and is located on the side closer to the busbar 21. The fill rates of adjacent modulation regions B1 are different, and the fill rate of modulation region B1 is the ratio of the area of ​​the first suppression structure 30 to the area of ​​the modulation region B1. In one example, the fill rates of any two adjacent modulation regions B1 are different; in another example, the fill rates of some adjacent modulation regions B1 are different, and the fill rates of some adjacent modulation regions B1 may be the same; no specific limitation is made here.

[0138] In this context, adjacent modulation regions B1 can be the two closest modulation regions B1 within the same gap region B; alternatively, adjacent modulation regions B1 can be two modulation regions B1 positioned opposite each other in different gap regions B. In the embodiments of this application, both of these cases can be considered as adjacent modulation regions B1.

[0139] For example, the fill rates of two adjacent modulation regions B1 are different, that is, the total area of ​​the first suppression structure 30 in one modulation region B1 is different from the total area of ​​the first suppression structure 30 in the adjacent modulation region B1. By controlling the different fill rates of two adjacent modulation regions B1, the first suppression structures 30 in the two adjacent modulation regions B1 can be differentiated, so that the first suppression structures 30 in the two adjacent modulation regions B1 are randomly and irregularly distributed in the corresponding modulation regions B1. This further ensures that the gap regions B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap to form strong clutter modes, which is beneficial to improving the suppression effect on the second type of clutter modes.

[0140] like Figure 8 As shown, exemplarily, taking a gap region B comprising an adjacent first modulation region C1, a second modulation region C2, and a third modulation region C3 as an example, the first modulation region C1 and the second modulation region C2 are located in the same gap region B, while the first modulation region C1 and the third modulation region C3 are located in different gap regions B. In this embodiment, the fill rates of the first modulation region C1 and the second modulation region C2 are different, and the fill rates of the first modulation region C1 and the third modulation region C3 are also different.

[0141] In some embodiments, the number of first suppression structures 30 in one modulation region B1 is different from the number of first suppression structures 30 in another modulation region B1; and / or, the shape of the first suppression structure 30 in one modulation region B1 is different from the shape of the first suppression structure 30 in another modulation region B1.

[0142] For example, the number of first suppression structures 30 in one modulation region B1 can be greater than the number of first suppression structures 30 in another modulation region B1, and the number of first suppression structures 30 in one modulation region B1 can also be less than the number of first suppression structures 30 in another modulation region B1, as long as the number of first suppression structures 30 in one modulation region B1 is different from the number of first suppression structures 30 in another modulation region B1, thereby making the filling rates of the two adjacent modulation regions B1 different. In this embodiment of the application, by making the number of first suppression structures 30 different, their resonance and synergistic effect on sound waves are disrupted, thereby ensuring a good suppression effect on the first type of miscellaneous modes while further improving the suppression effect on the second type of miscellaneous modes.

[0143] For example, the shape of the first suppression structure 30 within a modulation region B1 can be the projection shape of the first suppression structure 30 in the thickness direction of the surface acoustic wave device 100. The shape of the first suppression structure 30 within the modulation region B1 can be rectangular, circular, trapezoidal, irregular, etc. It should be noted that in two adjacent modulation regions B1, at least one of the first suppression structures 30 needs to have a different shape, so that the filling rate of the two adjacent modulation regions B1 is different; no specific limitation is made here. In this embodiment, by making the outer contour shape of the first suppression structure 30 different, its resonance and synergistic effect on the sound wave are disrupted, thereby ensuring a good suppression effect on the first type of miscellaneous mode while further improving the suppression effect on the second type of miscellaneous mode.

[0144] It should be noted that only the number of the first suppression structure 30 in one modulation region B1 can be controlled to be different from the number of the first suppression structure 30 in another modulation region B1; only the shape of the first suppression structure 30 in one modulation region B1 can be controlled to be different from the shape of the first suppression structure 30 in another modulation region B1; preferably, both the number and shape of the first suppression structure 30 in one modulation region B1 and the number and shape of the first suppression structure 30 in another modulation region B1 can be controlled to be different, so that the filling rate difference between the two adjacent modulation regions B1 is greater, and further so that the gap regions B in which they are located cannot form obvious resonant cavities or the resonant cavities formed will not overlap each other to form strong heterogeneous modes. Thus, while ensuring a good suppression effect on the first type of heterogeneous mode, it is beneficial to improve the suppression effect on the second type of heterogeneous mode.

[0145] In some embodiments, multiple first suppression structures 30 are spaced apart within the same gap region B, and the fill rate of the gap region B is less than or equal to 50%, wherein the fill rate of the gap region B is the ratio of the area of ​​the first suppression structure 30 to the area of ​​the gap region B.

[0146] For example, within the same gap region B, multiple first suppression structures 30 are spaced apart, and the fill rate of the gap region B can be 20%, 25%, 30%, 35%, 40%, 45%, and 50%, etc. By controlling the multiple first suppression structures 30 within the same gap region B to be spaced apart, and controlling the fill rate of the gap region B to be less than or equal to 50%, it is beneficial to ensure that none of the gap regions B contain obvious resonant cavities, or that the resonant cavities formed do not overlap to form strong heterodynes, thereby improving the suppression effect on the second type of heterodynes.

[0147] The following simulation experiments will compare the harmonic admittance variation curves of the surface acoustic wave device (Example 1) provided in this application with those of the surface acoustic wave device (Comparative Example 1) provided in related technologies. Figure 13 This is a schematic diagram comparing the real part variation curves of the admittance of the surface acoustic wave device provided in Example 1 and Comparative Example 1.

[0148] The surface acoustic wave device provided in one embodiment of this application (Embodiment 1) can be used for... Figure 10 The corresponding surface acoustic wave (SAW) device has a first suppression structure disposed in the gap region, and the projections of two adjacent first suppression structures in the first direction do not completely overlap, nor do the projections of two adjacent first suppression structures in the second direction, and the filling rates of the two relatively disposed gap regions are different; while the SAW device provided in the related technology (Comparative Example 1) can be Figure 1 The corresponding surface acoustic wave device is a surface acoustic wave device that does not have a first suppression structure in the gap region and has the same structure in the rest.

[0149] like Figure 13 As shown in the simulation experiment, the comparison of the real part admittance curves of the two devices reveals that the real part admittance curve of the surface acoustic wave device provided in Comparative Example 1 still has a bulge at the anti-resonance point (red elliptical region), indicating that the surface acoustic wave device provided in Comparative Example 1 still has a second type of miscellaneous mode (such as miscellaneous mode Spurious3). Compared with the surface acoustic wave device provided in Comparative Example 1, the real part admittance curve of the surface acoustic wave device provided in Example 1 at the anti-resonance point (red elliptical region) is smoother and its fluctuation is weaker, indicating that the surface acoustic wave device provided in Example 1 has a stronger ability to suppress the second type of miscellaneous mode. It can be seen that the ripples of the surface acoustic wave device provided in this embodiment almost disappear near the anti-resonance point. That is, the surface acoustic wave device of Example 1 has a significantly better suppression effect on the second type of miscellaneous mode than the surface acoustic wave device provided in Comparative Example 1. Therefore, the surface acoustic wave device of Example 1 can specifically suppress the second type of miscellaneous mode, thereby comprehensively improving the miscellaneous mode suppression effect of the surface acoustic wave device.

[0150] This application also provides a filter, which includes the surface acoustic wave device 100 described in any of the above embodiments.

[0151] When the filter includes a surface acoustic wave device 100, the filter provided in the embodiments of this application will be described in detail below.

[0152] The filter includes multiple series-arm surface acoustic wave (SAW) devices 100 connected in series between the input and output terminals, and multiple parallel-arm SAW devices 100 connected at one end to the series-arm SAW device 100 and at the other end to the ground terminal. At least one of the series-arm SAW device 100 and the parallel-arm SAW device 100 can be the SAW device 100 provided in any of the above embodiments. The filter has a good suppression effect on type II clutter modes.

[0153] This application also provides an RF front-end module, which includes the filter described in any of the above embodiments. This RF front-end module has a smaller size and better suppression of type II noise modes, thereby improving its reliability and practicality.

[0154] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A surface acoustic wave device, characterized in that, The surface acoustic wave device includes: piezoelectric substrate; An interdigital transducer disposed on the surface of the piezoelectric substrate includes opposing busbars and a plurality of electrode fingers connected to and spaced apart from the busbars, the plurality of electrode fingers being arranged alternately; in a first direction, there is an overlapping region between two busbars, the overlapping region including a middle region and edge regions located on both sides of the middle region in the first direction, the overlapping region forming a gap region with the busbar, the gap region also including a plurality of modulation regions, the modulation regions being the regions between two adjacent electrode fingers connected to the same busbar in the gap region, and located on the side closer to the busbar, the first direction being the extension direction of the electrode fingers; A first suppression structure is located in the gap region; A second suppression structure is disposed on the electrode finger in the edge region; Wherein, the projections of any two first suppression structures in the first direction and in the second direction do not completely overlap, and are randomly distributed in the gap region, the second direction is the arrangement direction of the electrode fingers, the filling rate of any two adjacent modulation regions is different, the filling rate of the modulation region is the ratio of the area of ​​the first suppression structure to the area of ​​the modulation region; the number of the first suppression structures in one modulation region is different from the number of the first suppression structures in another modulation region.

2. The surface acoustic wave device according to claim 1, characterized in that, The shape of the first suppression structure in one modulation region is different from the shape of the first suppression structure in another modulation region.

3. The surface acoustic wave device according to claim 1, characterized in that, The difference in fill rate between two adjacent modulation regions is less than or equal to 50%.

4. The surface acoustic wave device according to claim 1, characterized in that, Along the second direction, the modulation region includes a first modulation region and a second modulation region disposed adjacent to the first modulation region; The first modulation region includes a first sub-suppression structure, the second modulation region includes a second sub-suppression structure, and the length of the first sub-suppression structure in the second direction is greater than the length of the second sub-suppression structure in the second direction.

5. The surface acoustic wave device according to claim 4, characterized in that, The modulation region further includes a third modulation region, which is located on the opposite side of the first modulation region and the second modulation region and close to another busbar. Wherein, the fill rate difference between the first modulation region and the second modulation region is greater than the fill rate difference between the first modulation region and the third modulation region; and the fill rate difference between the first modulation region and the third modulation region is greater than the fill rate difference between the second modulation region and the third modulation region.

6. The surface acoustic wave device according to any one of claims 1-5, characterized in that, Within the modulation region, the fill rate on the side closer to the overlapping region is greater than the fill rate on the side closer to the busbar.

7. The surface acoustic wave device according to claim 1, characterized in that, The areas of two adjacent first suppression structures are different.

8. The surface acoustic wave device according to claim 1, characterized in that, Within the same gap region, multiple first suppression structures are spaced apart, and the fill rate of the gap region is less than or equal to 50%, wherein the fill rate of the gap region is the ratio of the area of ​​the first suppression structure to the area of ​​the gap region.

9. The surface acoustic wave device according to claim 1, characterized in that, The first suppression structure includes an opening that is disposed toward the overlapping region.

10. The surface acoustic wave device according to claim 1, characterized in that, The gap region includes a modulation region, which is adjacent to the busbar and spaced apart from the overlapping region; Wherein, the length of the modulation region in the first direction is less than or equal to 2λ, and λ is twice the center-to-center distance between adjacent electrode fingers in the second direction.

11. The surface acoustic wave device according to claim 10, characterized in that, Within the same gap region, the gap region further includes a protection region, which is adjacent to the modulation region and adjacent to the overlapping region; Wherein, the length of the protected area in the first direction is less than or equal to 0.3λ.

12. The surface acoustic wave device according to claim 11, characterized in that, The surface acoustic wave device further includes an intermediate electrode located within the protection region, and the length of the intermediate electrode in the second direction is greater than the length of the first suppression structure in the second direction.

13. The surface acoustic wave device according to claim 12, characterized in that, The fill rate of the protected region is greater than the fill rate of the modulation region. The fill rate of the protected region is the ratio of the area of ​​the intermediate electrode to the area of ​​the protected region. The fill rate of the modulation region is the ratio of the area of ​​the first suppression structure to the area of ​​the modulation region.

14. The surface acoustic wave device according to claim 1, characterized in that, The area of ​​the first suppression structure is (0.1λ×0.1λ)-(λ×λ), where λ is twice the center-to-center distance between adjacent electrode fingers in the second direction.

15. The surface acoustic wave device according to claim 1, characterized in that, The first suppression structure includes a first connecting portion and a second connecting portion connected to the first connecting portion; Wherein, the extension direction of the first connecting part is the same as the first direction, and the extension direction of the second connecting part is the same as the second direction.

16. The surface acoustic wave device according to claim 15, characterized in that, The length of the second connecting portion in the second direction is greater than the length of the first connecting portion in the second direction.

17. The surface acoustic wave device according to claim 1, characterized in that, The projections of two adjacent second suppression structures in the second direction do not completely overlap.

18. The surface acoustic wave device according to claim 1, characterized in that, In the first direction, the second suppression structure overlaps at least with a projected portion of the first suppression structure.

19. A surface acoustic wave device, characterized in that, The surface acoustic wave device includes: piezoelectric substrate; An interdigital transducer disposed on the surface of the piezoelectric substrate includes opposing busbars and a plurality of electrode fingers connected to and spaced apart from the busbars, the plurality of electrode fingers being arranged alternately; in a first direction, there is an overlapping region between two busbars, the overlapping region including a middle region and edge regions located on both sides of the middle region in the first direction, the overlapping region forming a gap region with the busbar, the gap region also including a plurality of modulation regions, the modulation regions being the regions between two adjacent electrode fingers connected to the same busbar in the gap region, and located on the side closer to the busbar, the first direction being the extension direction of the electrode fingers; A first suppression structure is located in the gap region; A second suppression structure is disposed on the electrode finger in the edge region; The two gap regions are arranged opposite to each other and have different fill rates. The fill rate of the gap region is the ratio of the area of ​​the first suppression structure to the area of ​​the gap region. Within the same gap region, the projections of any two first suppression structures in the first direction and the second direction do not completely overlap and are randomly distributed within the gap region. The second direction is the arrangement direction of the electrode fingers. The fill rates of any two adjacent modulation regions are different and the fill rate of the modulation region is the ratio of the area of ​​the first suppression structure to the area of ​​the modulation region. The number of first suppression structures in one modulation region is different from the number of first suppression structures in the other modulation region.

20. The surface acoustic wave device according to claim 19, characterized in that, Within the same gap region, multiple first suppression structures are spaced apart, and the fill rate of the gap region is less than or equal to 50%.

21. The surface acoustic wave device according to claim 19, characterized in that, The number of the first suppression structures in one modulation region is different from the number of the first suppression structures in the other modulation region; and / or, The shape of the first suppression structure in one modulation region is different from the shape of the first suppression structure in another modulation region.

22. A radio frequency front-end module, characterized in that, Includes the surface acoustic wave device as described in any one of claims 1-21.

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