Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus and a substrate processing method are provided. A substrate processing apparatus according to one aspect of an embodiment includes an inner tank, an outer tank, and a cover. The inner tank includes an opening in an upper portion of the inner tank to store a processing liquid in the inner tank. The outer tank is located outside the inner tank to receive the processing liquid flowing out from the opening. The cover closes or opens the opening of the inner tank. In a case where the cover closes the opening, a gap is formed between a lower surface of the cover and a liquid surface of the processing liquid stored in the inner tank. The cover includes a support member and a stagnation prevention mechanism. The support member supports a plurality of substrates to be subjected to immersion processing in the inner tank from above in a case where the opening is closed. The stagnation prevention mechanism prevents the processing liquid from stagnating around the support member.

Description

Technical Field

[0001] The exemplary embodiments disclosed herein relate to substrate processing apparatus and substrate processing method. Background Technology

[0002] Typically, in substrate processing systems, techniques for immersing a substrate in a processing liquid such as an etchant to perform liquid processing on the substrate are known (see Japanese Patent Application Laid-Open No. 2021-180253).

[0003] This disclosure provides techniques that can improve the yield of substrates. Summary of the Invention

[0004] A substrate processing apparatus according to one aspect of an embodiment includes an inner tank, an outer tank, and a cover. The inner tank includes an opening in its upper portion for storing a processing liquid. The outer tank is located outside the inner tank to receive the processing liquid flowing out from the opening. The cover closes or opens the opening of the inner tank. When the cover is closed, a gap is formed between the lower surface of the cover and the liquid surface of the processing liquid stored in the inner tank. The cover includes a support member and an anti-retention mechanism. When the opening is closed, the support member supports multiple substrates to be immersed in the inner tank from above. The anti-retention mechanism prevents the processing liquid from accumulating around the support member. Attached Figure Description

[0005] Figure 1 This is a schematic block diagram illustrating the configuration of a substrate processing system according to an embodiment; Figure 2 This is a schematic block diagram illustrating the configuration of an etching processing apparatus according to an embodiment; Figure 3 This is a diagram illustrating an example of an etching process according to an embodiment; Figure 4 This is a cross-sectional view showing an example of the configuration of the support member according to an embodiment; Figure 5 This is an enlarged cross-sectional view showing an example of the configuration of the support member according to an embodiment; Figure 6 It is along Figure 5 The arrow view showing the cross-section intercepted by line AA; Figure 7 This is an enlarged cross-sectional view showing an example of the configuration of the support member according to alternative example 1 of the embodiment; Figure 8 It is along Figure 7 The arrow view shows the cross-section intercepted by line BB; Figure 9 This is a flowchart illustrating an example of a substrate processing procedure performed by a substrate processing system according to an alternative example 1 of an embodiment; Figure 10 This is an enlarged cross-sectional view showing an example of the configuration of the support member according to alternative example 2 of the embodiment; Figure 11 It is along Figure 10 The arrow view showing the cross-section intercepted by line CC; Figure 12 This is a cross-sectional view illustrating an example of the configuration of the support member according to alternative example 3 of the embodiment; Figure 13 This is an enlarged cross-sectional view showing an example of the configuration of the support member according to Alternative Example 3 of the embodiment; and Figure 14 It is along Figure 13 The arrow view shows the cross-section cut by line DD. Detailed Implementation

[0006] In the following description, exemplary embodiments of the substrate processing apparatus and substrate processing method disclosed in this application will be explained in detail with reference to the accompanying drawings. This disclosure is not limited to the embodiments described below. Note that the drawings are schematic, and therefore in some cases, the relationships between the dimensions of elements and the ratios between elements may differ from actual relationships. Furthermore, portions where the relationships and / or ratios between dimensions differ may be included in the drawings.

[0007] Conventionally, in substrate processing systems, techniques are known for immersing substrates in a processing liquid such as an etchant to perform liquid processing on the substrates. In the aforementioned conventional techniques, multiple substrates are collectively immersed in a processing liquid stored in a processing tank, enabling liquid processing of multiple substrates simultaneously.

[0008] On the other hand, in the aforementioned conventional techniques, in some cases, the reaction products from liquid treatment remain on top of the processing liquid stored in the processing tank. Therefore, for example, when the liquid-treated substrate is extracted from the processing liquid, the reaction products adhere to the substrate, and as a result, there is a possibility of a decrease in the substrate yield.

[0009] Therefore, it is desirable to develop a technology that can overcome the above-mentioned problems and improve the yield of substrates.

[0010] Configuration of substrate processing system Reference Figure 1 The configuration of the substrate processing system 1 according to the embodiment is described. Figure 1 This is a schematic block diagram illustrating the configuration of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus.

[0011] like Figure 1As shown, the substrate processing system 1 according to the embodiment includes: a transporter transport entry / exit unit 2, a batch forming unit 3, a batch placement unit 4, a batch transfer unit 5, a batch processing unit 6, and a control device 7.

[0012] The carrier transport entry and exit section 2 includes a carrier platform 20, a carrier conveying mechanism 21, carrier stocks 22 and 23, and a carrier placing pedestal 24.

[0013] Multiple transporters C are placed on a transport stage 20 that is transported from the outside. Each transporter C is a container capable of holding multiple wafers W (e.g., 25 wafers) that are vertically aligned in a horizontal orientation. A transporter transfer mechanism 21 transports the transporters C between the transport stage 20, transporter libraries 22 and 23, and transporter placement seat 24.

[0014] The substrate transfer mechanism 30, described later, transports multiple wafers W to be processed from the transporter C placed on the transporter placement seat 24 to the batch processing unit 6. The substrate transfer mechanism 30 transports multiple wafers W to be processed from the batch processing unit 6 into the transporter C placed on the transporter placement seat 24.

[0015] The batch forming unit 3 includes a substrate transport mechanism 30 to form batches. A batch consists of multiple wafers W (e.g., 50 wafers), which are obtained by combining wafers W to be processed simultaneously in at least one of the transporters C. For example, the multiple wafers W forming a single batch are aligned at a constant interval with their main surfaces facing each other.

[0016] The substrate transfer mechanism 30 transfers multiple wafers W between the carrier C, which is placed on the carrier placement seat 24, and the batch placement section 4.

[0017] The wafer placement section 4 includes a batch transfer station 40, and wafers transferred between the batch forming section 3 and the batch processing section 6 via the batch transfer section 5 are temporarily placed (i.e., waiting) on ​​the batch transfer station 40. The batch transfer station 40 includes a placement station 41 and a placement station 42. The batch to be processed formed by the batch forming section 3 is placed on the placement station 41, and the batch that has already been processed in the batch processing section 6 is placed on the placement station 42. Multiple wafers W, having a batch quantity, are aligned one after another in an upright position on each of the placement stations 41 and 42.

[0018] The batch transfer unit 5 includes a batch transfer mechanism 50 for transferring batches between the batch placement unit 4 and the batch processing unit 6 and / or within the batch processing unit 6. The batch transfer mechanism 50 includes a track 51, a moving body 52, and a substrate holder 53.

[0019] The track 51 is positioned to pass over the batch placement section 4 and the batch processing section 6 along the X-axis. The moving body 52 is configured to move along the track 51 while holding multiple wafers W. A substrate holder 53 is provided on the moving body 52 to hold multiple wafers W aligned one after another in an upright position.

[0020] The batch processing unit 6 performs etching, cleaning, and drying processes on multiple wafers W in a batch. In the batch processing unit 6, two etching devices 60, a cleaning device 70, a cleaning device 80, and a drying device 90 are arranged side by side along track 51.

[0021] Etching apparatus 60 performs etching processing on multiple wafers W in a batch. Cleaning apparatus 70 performs cleaning processing on multiple wafers W in a batch. Cleaning apparatus 80 performs cleaning processing on substrate holder 53.

[0022] The drying apparatus 90 performs drying processing collectively on multiple wafers W in a batch. Note that the number of etching apparatus 60, cleaning apparatus 70, cleaning apparatus 80, and drying apparatus 90 is not limited. Figure 1 The example shown.

[0023] Each etching processing apparatus 60 includes a processing tank 61 dedicated to etching processing, a processing tank 62 dedicated to rinsing processing, and substrate lifting mechanisms 63 and 64.

[0024] Processing tank 61 is capable of accommodating wafers W in a batch, aligned in an upright orientation, to store a chemical liquid (hereinafter referred to as "etching agent") specifically for etching processing. Details of processing tank 61 will be described later.

[0025] The processing tank 62 stores a processing liquid (e.g., deionized water) specifically for rinsing. In each of the substrate lifting mechanisms 63 and 64, multiple wafers W forming a batch are held in a state where the wafers W are aligned one after another in an upright posture.

[0026] Each etching processing apparatus 60 holds the batch conveyed by the batch transfer unit 5 in the corresponding substrate lifting mechanism 63, and further immerses the batch in the etchant in the processing tank 61 to perform etching processing.

[0027] The batches etched in processing tank 61 are transferred to processing tank 62 via batch transfer unit 5. The etching processing apparatus 60 holds the transferred batches with substrate lifting mechanism 64 and further immerses the batches in rinsing liquid in processing tank 62 to perform a rinsing process. The batches rinsed in processing tank 62 are then transferred to processing tank 71 of cleaning processing apparatus 70 via batch transfer unit 5.

[0028] The cleaning process apparatus 70 includes a dedicated cleaning tank 71, a dedicated rinsing tank 72, and substrate lifting mechanisms 73 and 74. A dedicated cleaning chemical liquid (hereinafter referred to as a "cleaning solution") is stored in the dedicated cleaning tank 71. The cleaning solution may be, for example, an ammonia solution or tetramethylammonium hydroxide (TMAH).

[0029] A dedicated rinsing solution (e.g., deionized water) is stored in a dedicated rinsing tank 72. Substrate lifting mechanisms 73 and 74 each hold multiple wafers W in batches, with the wafers W aligned one after another in an upright position.

[0030] The cleaning process apparatus 70 holds the batch conveyed by the batch transfer unit 5 in the substrate lifting mechanism 73 and further immerses the batch in the cleaning liquid in the processing tank 71 to perform the cleaning process.

[0031] The batches cleaned in the processing tank 71 are transferred to the processing tank 72 via the batch transfer unit 5. The cleaning processing device 70 holds the transferred batches with the substrate lifting mechanism 74 and further immerses the batches in the rinsing liquid of the processing tank 72 to perform a rinsing process. The batches rinsed in the processing tank 72 are then transferred to the processing tank 91 of the drying processing device 90 via the batch transfer unit 5.

[0032] The drying apparatus 90 includes a processing tank 91 and a substrate lifting mechanism 92. Processing gas specifically for drying is supplied to the processing tank 91. In the substrate lifting mechanism 92, multiple wafers W in batches are held in a vertically aligned manner, one after another.

[0033] The drying process apparatus 90 holds the batch conveyed by the batch transfer unit 5 in the substrate lifting mechanism 92, and performs drying processing on the batch by using a processing gas specifically for drying processing supplied to the processing tank 91. The batch that has been dried in the processing tank 91 is then transferred to the batch placement unit 4 by the batch transfer unit 5.

[0034] The cleaning process apparatus 80 supplies a dedicated cleaning liquid to the substrate holder 53 of the batch transfer mechanism 50 and further supplies dry gas to the substrate holder 53 to perform a cleaning process on the substrate holder 53.

[0035] The substrate processing system 1 includes a control device 7. The control device 7 is, for example, a computer, and includes a controller 9 and a memory 10. The memory 10 stores programs for controlling various processes to be performed in the substrate processing system 1. The controller 9 reads and executes the programs stored in the memory 10 to control the operation of the substrate processing system 1.

[0036] The above-described program can be stored in a computer-readable storage medium, and can also be installed from the storage medium into the memory 10 of the control device 7. Examples of computer-readable storage media include, for example, hard disks (HD), floppy disks (FD), compact discs (CD), magneto-optical discs (MO), and memory cards.

[0037] Configuration of etching processing equipment Next, refer to Figure 2 and Figure 3 This describes the configuration of the etching processing apparatus 60 that performs the etching process on wafer W. Figure 2 This is a schematic block diagram illustrating the configuration of the etching processing apparatus 60 according to an embodiment.

[0038] The etching processing apparatus 60 includes an etchant supply unit 100 and a substrate processing unit 110. The etchant supply unit 100 supplies etchant L to the substrate processing unit 110. The etchant L is an example of a processing liquid.

[0039] The etchant supply unit 100 includes an etchant supply source 101, an etchant supply route 102, and a flow controller 103.

[0040] For example, the etchant supply source 101 is a tank in which the etchant L is stored. For example, the etchant L according to the embodiment is a mixed solution comprising phosphoric acid, acetic acid and nitric acid, etc.

[0041] The etchant supply route 102 connects the etchant supply source 101 and the outer tank 112 of the processing tank 61 to each other so as to supply etchant L from the etchant supply source 101 to the outer tank 112.

[0042] A flow controller 103 is arranged on the etchant supply route 102 to adjust the flow rate of the etchant L to be supplied to the outer tank 112. The flow controller 103 includes an on / off valve, a flow control valve, a flow meter, etc.

[0043] The substrate processing unit 110 immerses a plurality of wafers W in etchant L supplied from the etchant supply unit 100 to perform an etching process on the plurality of wafers W. The wafers W are an example of a substrate.

[0044] Therefore, as Figure 3As shown, for SiOx films or AlOx films on wafer W (in Figure 3 In this process, a portion of the metal film formed on the surface of the AlOx film is etched. For example, the metal film may include Mo or W.

[0045] In this embodiment, the etchant L to be used in the etching process can be a mixed solution comprising phosphoric acid, acetic acid, and nitric acid. Therefore, located near... Figure 3 The etching amount of the metal film at the opening of the recess T and the etching amount of the metal film at the position near the bottom of the recess T become uniform.

[0046] On the other hand, in the above etching process, when the metal film includes, for example, Mo, the Mo reacts with the phosphorus included in the etchant to generate an oxide of phosphorus and Mo (hereinafter referred to as "phosphomolybdic acid") as a reaction product.

[0047] The aforementioned phosphomolybdic acid has multiple forms, and among these forms are those with low solubility in aqueous solutions. Therefore, in the etching process according to the embodiment, in some cases, the reaction products remain on top of the etchant L stored in the substrate processing unit 110.

[0048] Return to Figure 2 The substrate processing unit 110 includes a processing tank 61, a substrate lifting mechanism 63, an etchant circulation unit 120, and a bubbling gas supply unit 140. The processing tank 61 includes an inner tank 111, an outer tank 112, and a cover 113.

[0049] The inner tank 111 is a tank for immersing multiple wafers W in etchant L, and thus contains etchant L specifically for immersion. An opening 111a is formed in the upper part of the inner tank 111, and etchant L is stored up to the opening 111a.

[0050] In the inner tank 111, a plurality of wafers W are immersed in etchant L by a substrate lifting mechanism 63 to perform etching on the plurality of wafers W. The substrate lifting mechanism 63 is configured to rise and fall, and further holds the plurality of wafers W in a state in which the wafers W are aligned one after another in a vertical posture.

[0051] An outer groove 112 is arranged outside the inner groove 111 such that the outer groove 112 surrounds the inner groove 111 to receive the etchant L flowing out from the opening 111a of the inner groove 111. Figure 2 As shown, the liquid level in the outer tank 112 is kept lower than the liquid level in the inner tank 111.

[0052] The cover 113 closes or opens the opening 111a of the inner groove 111. In other words, the cover 113 is movable between a closed position for covering the opening 111a of the inner groove 111 and an open position for opening the opening 111a.

[0053] Controller 9 (see Figure 1 The cover 113 is moved to the closed position to reduce the dissolution of atmospheric oxygen into the etchant L in the inner tank 111. The controller 9 moves the cover 113 to the open position to allow multiple wafers W to be transported into or out of the inner tank 111.

[0054] For example, cover 113 includes a first cover 114 and a second cover 115. The first cover 114 closes or opens a first region in the opening 111a of the inner groove 111. The second cover 115 closes or opens a second region in the opening 111a of the inner groove 111.

[0055] exist Figure 2 In the example shown, the opening 111a is configured to be opened / closed using two covers (i.e., a first cover 114 and a second cover 115); however, the configuration of the cover 113 is not limited to the example described above. In this disclosure, for example, the opening 111a can be closed or opened using a single cover 113.

[0056] The cover 113 includes a support member 116. For example, when the cover 113 is closed at the opening 111a, the support member 116 extends from the lower surface 113a of the cover 113 (see [link to documentation]). Figure 4 A plate-like member extending downwards.

[0057] With the cover 113 closed, the opening 111a is closed, and the support member 116 supports from above the multiple wafers W to be impregnated in the inner tank 111.

[0058] Therefore, even when the processing liquid nozzle 125 and gas nozzle 144, described later, form an upward flow of etchant L in the inner tank 111, it is possible to prevent a portion of the wafer W from floating upward and accidentally moving into a slot different from the intended slot.

[0059] Therefore, according to the embodiment, multiple wafers W can be stably etched. The detailed configuration of the support member 116 will be described later.

[0060] The etchant circulation unit 120 circulates the etchant L between the inner tank 111 and the outer tank 112. The etchant circulation unit 120 includes a circulation path 121, a pump 122, a heater 123, a filter 124, and multiple liquid treatment nozzles 125 (in...). Figure 2 (The middle part contains three nozzles).

[0061] The outer tank 112 and the inner tank 111 are connected to each other via a circulation path 121. One end of the circulation path 121 is connected to the bottom of the outer tank 112, and the other end of the circulation path 121 is connected to a processing liquid nozzle 125 located in the inner tank 111. The pump 122, heater 123, and filter 124 are arranged in this order on the circulation path 121, starting from the outer tank 112.

[0062] Pump 122 creates a circulating flow of etchant L, which is transported from the outer tank 112 to the inner tank 111 via circulation path 121. Etching agent L overflows from the opening 111a of the inner tank 111 to flow back into the outer tank 112. In this way, a circulating flow of etchant L is formed in the substrate processing unit 110. In other words, the aforementioned circulating flow is formed in the outer tank 112, circulation path 121, and inner tank 111.

[0063] Heater 123 adjusts the temperature of the etchant L circulating through circulation path 121. Filter 124 filters the etchant L circulating through circulation path 121. Processing liquid nozzle 125 discharges the etchant L upward in inner tank 111, which is circulating through circulation path 121, to form an upward flow in inner tank 111.

[0064] The bubbling gas supply unit 140 discharges bubbles of inert gas (e.g., nitrogen) into the etchant L stored in the inner tank 111. The bubbling gas supply unit 140 includes a gas supply source 141, a gas supply route 142, a flow controller 143, and multiple gas nozzles 144 (in...). Figure 6 (The center contains six nozzles).

[0065] Gas supply route 142 connects gas supply source 141 and a plurality of gas nozzles 144 to each other to supply inert gas (e.g., nitrogen) from gas supply source 141 to the plurality of gas nozzles 144.

[0066] A flow controller 143 is arranged on the gas supply route 142 to adjust the supply of inert gas to the multiple gas nozzles 144. The flow controller 143 includes an on / off valve, a flow control valve, and a flow meter, etc.

[0067] For example, multiple gas nozzles 144 are located in the inner tank 111 below the wafer W and the processing liquid nozzle 125. The multiple gas nozzles 144 discharge bubbles of inert gas upward into the etchant L stored in the inner tank 111 to form an upward flow in the inner tank 111.

[0068] According to an embodiment, the etching apparatus 60 discharges bubbles of inert gas from a plurality of gas nozzles 144, enabling a rapid flow of etchant L to be supplied to the gaps between a plurality of wafers W aligned in the inner tank 111. Therefore, according to this embodiment, etching can be performed efficiently and uniformly on a plurality of wafers W.

[0069] Configuration of support components Next, refer to Figures 4 to 6 The detailed configuration of the support member 116 provided in the etching processing apparatus 60 is explained. Figure 4 This is a cross-sectional view showing an example of the configuration of the support member 116 according to an embodiment.

[0070] Figure 5 This is an enlarged cross-sectional view showing an example of the configuration of the support member 116 according to an embodiment, and also shows... Figure 4 An enlarged view of region R1 shown. Figure 6 It is along Figure 5 The arrow view shows the cross-section intercepted by line AA. Note that... Figure 4 And the following diagrams (except for) Figure 9 (Except for) each shows the case where the cover 113 is in the closed position and further etching is performed on multiple wafers W.

[0071] like Figure 4 As shown, the support member 116 is located in the inner groove 111 along a predetermined direction (i.e., Figure 4 The support member 116 is positioned above all wafers W aligned along the Y-axis direction. In other words, the support member 116 is arranged to extend along the direction aligned with the multiple wafers W.

[0072] like Figure 5 As shown, a comb-shaped support member 116a is arranged on the front end of the support member 116, which is opposite to the bottom end of the support member 116 that contacts the cover 113 (e.g., the second cover 114). In an embodiment, a plurality of recesses formed in the comb-shaped support member 116a support the upper portions of a plurality of wafers W from above.

[0073] Therefore, it is possible to prevent a portion of wafer W from moving into a slot different from the predetermined slot. Thus, according to the embodiment, multiple wafers W can be stably etched.

[0074] In this document, in this embodiment, as Figure 5 As shown, preferably, the support member 116 includes a slit 116b located closer to the base end of the support member 116 than to its leading end, and extending in a horizontal direction. The slit 116b is an example of an anti-stagnation mechanism.

[0075] For example, in opening 111a (see Figure 2 With the cover 113 closed, the slit 116b is positioned where the surface of the etchant L, La, passes through the slit 116b.

[0076] Therefore, as Figure 6 As shown, located in support member 116 (i.e., Figure 6 The etchant L on both sides (in the X-axis direction) can communicate with each other through the slit 116b. Therefore, it is possible to prevent the etchant L from remaining on the side surface of the support member 116 (i.e., perpendicular to the X-axis direction). Figure 6 The vicinity of the surface in the X-axis direction.

[0077] In other words, the support member 116 includes a slit 116b, which prevents the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0078] Therefore, according to this embodiment, it is possible to prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and to further improve the yield of wafer W.

[0079] Additionally, in this embodiment, as Figure 4 As shown, when the opening 111a is closed by the cover 113, it is preferable that a gap is formed between the lower surface 113a of the cover 113 and the liquid surface La of the etchant L.

[0080] Therefore, the etchant L in the upper layer flows into the outer tank 112 (see...). Figure 2 In this case, the lower surface 113a of the cover 113 can be prevented from becoming resistant to flow. Therefore, it is possible to promote the flow of the etchant L in the upper layer (in which the reaction products of the etching process are easily retained) into the outer tank 112.

[0081] Therefore, according to this embodiment, the filter 124 (see...) Figure 2 This efficiently removes the reaction products from the etching process, thereby further improving the yield of wafer W.

[0082] Alternative Example 1 Next, refer to Figures 7 to 14 Various alternative examples of the support member 116 according to the embodiment are described. Figure 7 This is an enlarged cross-sectional view showing an example of the configuration of the support member 116 according to an alternative example 1 of the embodiment. Figure 8 It is consistent with the embodiments Figure 6 Corresponding along Figure 7 The arrow view shows the cross-section cut by line BB.

[0083] like Figure 7 As shown, in Alternative Example 1, the support member 116 includes a first gas discharge mechanism 116c. The first gas discharge mechanism 116c is an example of an anti-retention mechanism and a gas discharge mechanism.

[0084] The opening 111a is closed on the cover 113 (see...) Figure 2 In the case of ), the first gas discharge mechanism 116c discharges gas G from above the liquid surface La of the etchant L located around the support member 116 toward the liquid surface La.

[0085] Therefore, the discharged gas G agitates the etchant L, preventing the etchant L from remaining near the side surface of the support member 116. This also prevents the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0086] Therefore, according to Alternative Example 1, it is possible to prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0087] Furthermore, in alternative example 1, such as Figure 7 and Figure 8 As shown, the first gas discharge mechanism 116c may include a plurality of first nozzle groups 116d, each of which is composed of a plurality of first nozzles 116e that discharge gas G in different directions.

[0088] Therefore, gas G can be discharged over a wide range toward the liquid surface La located near the support member 116, making it more reliable to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0089] Therefore, according to Alternative Example 1, it is possible to more reliably prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0090] In alternative example 1, such as Figure 7 As shown, the first nozzle 116e, belonging to the first nozzle group 116d (see...) Figure 8 Gas G can be discharged at an angle θ1 equal to or less than 45° relative to the liquid surface La of etchant L.

[0091] Therefore, the gas G can efficiently form the etchant L to flow in the horizontal direction, which further makes it more reliable to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0092] Therefore, according to Alternative Example 1, it is possible to more reliably prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0093] Furthermore, in alternative example 1, such as Figure 8 As shown, one of the first nozzles 116e can discharge gas G at an angle θ2 equal to or greater than 45° relative to the other of the first nozzles 116e belonging to the same first nozzle group 116d.

[0094] Therefore, gas G can be discharged over a wider area toward the liquid surface La near the support member 116, making it more reliable to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0095] Therefore, according to Alternative Example 1, it is possible to more reliably prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0096] Furthermore, in alternative example 1, such as Figure 7 As shown, similar to the embodiments described above, the support member 116 may include a slit 116b. Therefore, it is possible to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0097] Therefore, according to Alternative Example 1, it is possible to prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0098] In this disclosure, gas G can be nitrogen or dry air. As described above, when inexpensive nitrogen or dry air is used for gas G, etching can be performed on wafer W at low cost.

[0099] Figure 9 This is a flowchart illustrating an example of a substrate processing procedure performed by a substrate processing system 1 according to an alternative example 1 of an embodiment. In the substrate processing according to alternative example 1, the controller 9 controls the etching processing apparatus 60, etc., to open the cover 113 of the processing tank 61 (step S101).

[0100] Next, the controller 9 controls the batch transfer unit 5, etc., to transport a batch consisting of multiple wafers W into the inner tank 111 of the processing tank 61 (step S102). Through the processing in step S102, the multiple wafers W are immersed in the etchant L.

[0101] Next, the controller 9 controls the etching processing apparatus 60, etc., to close the cover 113 of the processing tank 61 (step S103). Through the above-described process in step S103, multiple wafers W are supported from above by the support member 116.

[0102] Next, the controller 9 controls the etching processing apparatus 60, etc., to cause the first gas discharge mechanism 116c to discharge gas G from above the liquid surface La of the etchant L toward the liquid surface La (step S104). The above-described process in step S104 prevents the etchant L from remaining around the support member 116.

[0103] Note that in Alternative Example 1, simultaneously with the start of the above-described process in step S104, the controller 9 can cause the bubbling gas supply unit 140 to begin discharging inert gas bubbles into the etchant L.

[0104] Next, the controller 9 determines whether the etching process of the batch immersed in the etchant L has been completed (step S105). For example, if the immersion time interval of the batch exceeds a predetermined time interval, the controller 9 can determine that the etching process of the batch has been completed.

[0105] If it is determined that the etching process of the batch has not yet been completed (step S105: No), the controller 9 continues the process of step S105.

[0106] On the other hand, if it is determined that the etching process of the batch has ended (step S105: Yes), the controller 9 causes the first gas discharge mechanism 116c to stop discharging gas G (step S106).

[0107] Note that in Alternative Example 1, simultaneously with the above-described process in step S106, the controller 9 can cause the bubbling gas supply unit 140 to stop discharging inert gas bubbles.

[0108] Next, the controller 9 controls the etching processing apparatus 60, etc., to open the cover 113 of the processing tank 61 (step S107). The controller 9 controls the batch transfer unit 5, etc., to transport the batch out from the inner tank 111 of the processing tank 61 (step S108). Note that the batch transported out from the inner tank 111 is then subjected to cleaning, rinsing, and drying processes.

[0109] Finally, the controller 9 controls the etching processing apparatus 60, etc., to close the cover 113 of the processing tank 61 (step S109), and further concludes a series of substrate processing.

[0110] Alternative Example 2 Figure 10 This is an enlarged cross-sectional view showing an example of the configuration of the support member 116 according to alternative example 2 of the embodiment, and corresponding to the embodiment described above. Figure 5 . Figure 11 It is along Figure 10 The arrow view showing the cross-section cut by line CC corresponds to the embodiment described above. Figure 6 .

[0111] like Figure 10 As shown, in Alternative Example 2, the support member 116 includes a second gas discharge mechanism 116f. The second gas discharge mechanism 116f is an example of an anti-retention mechanism and a gas discharge mechanism.

[0112] The opening 111a is closed on the cover 113 (see...) Figure 2 In the case of ), the second gas discharge mechanism 116f discharges gas G from below the liquid surface La of the etchant L located around the support member 116 into the liquid of the etchant L.

[0113] Therefore, the etchant L is agitated by the discharged gas G, which prevents the etchant L from remaining near the side surface of the support member 116. Thus, the reaction products of the etching process are prevented from remaining in the upper layer of the etchant L where the support member 116 is located.

[0114] Therefore, according to Alternative Example 2, it is possible to prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0115] In alternative example 2, such as Figure 10 and Figure 11 As shown, the second gas discharge mechanism 116f may include a plurality of second nozzle groups 116g, each of which consists of a plurality of second nozzles 116h configured to discharge gas G in different directions.

[0116] Therefore, gas G can be discharged over a wide range in the liquid near the support member 116, which can prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0117] Therefore, according to Alternative Example 2, it is possible to more reliably prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0118] In alternative example 2, such as Figure 10 As shown, the second nozzle 116h, belonging to the second nozzle group 116g (see...) Figure 11 Gas G can be discharged at an angle θ3 equal to or less than 45° relative to the liquid surface La of etchant L.

[0119] Therefore, the gas G can efficiently form the etchant L to flow in the horizontal direction, which further makes it more reliable to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0120] Therefore, according to Alternative Example 2, it is possible to more reliably prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0121] In alternative example 2, such as Figure 11 As shown, a second nozzle 116h can discharge gas G at an angle θ4 equal to or greater than 45° relative to another second nozzle 116h belonging to the same second nozzle group 116g.

[0122] Therefore, gas G can be discharged over a wider range into the liquid near the support member 116, making it more reliable to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0123] Therefore, according to Alternative Example 2, the reaction products can be prevented from adhering to wafer W more reliably, and the yield of wafer W can be further improved.

[0124] Note that in alternative example 2, such as Figure 10 As shown, similar to the embodiments described above, the support member 116 may include a slit 116b. Therefore, similar to the embodiments described above, it is possible to more reliably prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0125] Therefore, according to Alternative Example 2, it is possible to prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0126] Alternative Example 3 Figure 12 This is a cross-sectional view showing an example of the configuration of the support member 116 according to alternative example 3 of the embodiment. Figure 13 This is an enlarged cross-sectional view showing an example of the configuration of the support member 116 according to alternative example 3 of the embodiment, and it shows... Figure 12 An enlarged view of region R2 shown. Figure 14 It is along Figure 13 The arrow view shows the cross-section cut by line DD.

[0127] like Figures 12 to 14As shown, in alternative example 3, the support member 116 includes a second gas discharge mechanism 116i consisting of a pair of rod-shaped nozzles. For example, the aforementioned pair of rod-shaped nozzles are located on a pair of side surfaces of the support member 116.

[0128] The opening 111a is closed on the cover 113 (see...) Figure 2 In the case of ), the second gas discharge mechanism 116i, which is composed of a rod-shaped nozzle, discharges gas G from below the liquid surface La of the etchant L located around the support member 116 into the liquid of the etchant L.

[0129] Therefore, the etchant L is agitated by the discharged gas G, which prevents the etchant L from remaining near the side surface of the support member 116. Thus, the reaction products of the etching process are prevented from remaining in the upper layer of the etchant L where the support member 116 is located.

[0130] Therefore, according to Alternative Example 3, it is possible to prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0131] In alternative example 3, the second gas discharge mechanism 116i, which is a rod-shaped nozzle, can discharge gas G at an angle equal to or less than 45° relative to the liquid surface La of the etchant L.

[0132] Therefore, the gas G can efficiently form the etchant L to flow in the horizontal direction, which further makes it more reliable to prevent the reaction products of the etching process from remaining in the upper layer of the etchant L where the support member 116 is located.

[0133] Therefore, in Alternative Example 3, it is possible to more reliably prevent reaction products from adhering to wafer W, for example, when multiple wafers W are being extracted from etchant L, and further improve the yield of wafer W.

[0134] A substrate processing apparatus (e.g., substrate processing system 1) according to one aspect of an embodiment includes an inner tank 111, an outer tank 112, and a cover 113. The inner tank 111 includes an opening 111a in its upper portion to store a processing liquid (e.g., etchant L). The outer tank 112 is located outside the inner tank 111 to receive the processing liquid (e.g., etchant L) flowing out from the opening 111a. The cover 113 closes or opens the opening 111a of the inner tank 111. When the cover 113 closes the opening 111a, a gap is formed between the lower surface 113a of the cover 113 and the liquid level La of the processing liquid (e.g., etchant L) stored in the inner tank 111. The cover 113 includes a support member 116 and anti-retention mechanisms (e.g., a slit 116b, a first gas discharge mechanism 116c, and second gas discharge mechanisms 116f and 116i). With opening 111a closed, support member 116 supports multiple substrates (e.g., wafers W) to be immersed in the inner tank 111 from above. Anti-retention mechanisms (e.g., slit 116b, first gas venting mechanism 116c, and second gas venting mechanisms 116f and 116i) prevent processing liquids (e.g., etchant L) from accumulating around support member 116. Therefore, the yield of wafers W can be improved.

[0135] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, the support member 116 includes a plate-like member that extends downward from the lower surface 113a of the cover 113 when the opening 111a is closed. An anti-retention mechanism is located closer to the base end of the support member 116 than to its front end, and is a slit 116b extending in the horizontal direction. Therefore, the yield of the wafer W can be improved.

[0136] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, the anti-retention mechanism includes a first gas discharge mechanism 116c, which discharges gas G toward the liquid surface La of the processing liquid located around the support member 116 when the cover 113 closes the opening 111a. Therefore, the yield of the wafer W can be improved.

[0137] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, the first gas discharge mechanism 116c includes a plurality of first nozzle groups 116d, each first nozzle group 116d consisting of a plurality of first nozzles 116e that discharge gas G in different directions. Therefore, the yield of the wafer W can be further improved.

[0138] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, a plurality of first nozzles 116e discharge gas G at an angle θ1 equal to or less than 45° relative to the liquid surface La of the processing liquid (e.g., etchant L). Therefore, the yield of the wafer W can be further improved.

[0139] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, one of the plurality of first nozzles 116e discharges gas G at an angle θ2 equal to or greater than 45° relative to another of the plurality of first nozzles 116e belonging to the same first nozzle group 116d. Therefore, the yield of the wafer W can be further improved.

[0140] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, the anti-retention mechanism includes a second gas discharge mechanism 116f or 116i, which discharges gas G into the processing liquid located around the support member 116 when the cover 113 closes the opening 111a. Therefore, the yield of the wafer W can be improved.

[0141] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, the second gas discharge mechanism 116f includes a plurality of second nozzle groups 116g, each second nozzle group 116g being composed of a plurality of second nozzles 116h that discharge gas G in different directions. Therefore, the yield of the wafer W can be further improved.

[0142] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, a plurality of second nozzles 116h discharge gas G at an angle θ3 equal to or less than 45° relative to the liquid surface La of the processing liquid (e.g., etchant L). Therefore, the yield of the wafer W can be further improved.

[0143] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, one of the plurality of second nozzles 116h discharges gas G at an angle θ4 equal to or greater than 45° relative to another of the plurality of second nozzles 116h belonging to the same second nozzle group 116g. Therefore, the yield of the wafer W can be further improved.

[0144] In the substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment, the support member 116 includes a plate-like member that extends downward from the lower surface 113a of the cover 113 when the opening 111a is closed. The second gas exhaust mechanism 116i includes a pair of rod-shaped nozzles, each located on a pair of side surfaces of the support member 116. Therefore, the yield of the wafer W can be further improved.

[0145] In the substrate processing apparatus (e.g., substrate processing system 1) according to the embodiment, a pair of rod-shaped nozzles discharge gas G at an angle equal to or less than 45° relative to the liquid surface La of the processing liquid (e.g., etchant L). Therefore, the yield of the wafer W can be further improved.

[0146] In the substrate processing apparatus (e.g., substrate processing system 1) according to the embodiment, the gas includes nitrogen or dry air. Therefore, etching processing can be performed on the wafer W at low cost.

[0147] A substrate processing apparatus (e.g., substrate processing system 1) according to an embodiment includes an inner tank 111, an outer tank 112, and a cover 113. The inner tank 111 includes an opening 111a in its upper portion to store a processing liquid (e.g., etchant L). The outer tank 112 is located outside the inner tank 111 to receive the processing liquid (e.g., etchant L) flowing out from the opening 111a. The cover 113 closes or opens the opening 111a of the inner tank 111. When the cover 113 closes the opening 111a, a gap is formed between the lower surface 113a of the cover 113 and the liquid surface La of the processing liquid (e.g., etchant L) stored in the inner tank 111. The cover 113 includes a support member 116 that supports multiple substrates (e.g., wafers W) to be immersed in the inner tank 111 from above when the opening 111a is closed. Therefore, etching can be stably performed on multiple wafers W.

[0148] The substrate processing apparatus (e.g., substrate processing system 1) according to the embodiment includes immersion (e.g., step S102), support (e.g., step S103), and prevention (e.g., step S104). Immersion (e.g., step S102) includes immersing a plurality of substrates (e.g., wafers W) in a processing liquid (e.g., etchant L) in an inner tank 111. Support (e.g., step S103) includes closing the opening 111a with a cover 113 and supporting the plurality of substrates (e.g., wafers W) from above with a support member 116. Prevention (e.g., step S104) includes venting gas G through a gas venting mechanism (e.g., a first gas venting mechanism 116c and a second gas venting mechanism 116f and 116i) and preventing the processing liquid (e.g., etchant L) from remaining around the support member 116. Therefore, the yield of wafers W can be further improved.

[0149] So far, embodiments according to this disclosure have been described. This disclosure is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. For example, in the above embodiments, the following situation is illustrated: the technology according to this application is applied to the collective etching process of multiple wafers W. However, it is not limited thereto. For example, the technology according to this application can be applied to, for example, the collective electroplating process of multiple wafers W.

[0150] According to this disclosure, the yield of substrates can be improved. Note that the above effects are not limited, and any of the effects described in this disclosure can be achieved.

Claims

1. A substrate processing apparatus, comprising: An inner tank, which includes an opening in its upper part, for storing the processing liquid in the inner tank; An outer tank, located outside the inner tank, is used to receive the processed liquid flowing out from the opening; as well as A cover that closes or opens the opening of the inner groove. Wherein, when the opening is closed by the cover, a gap is formed between the lower surface of the cover and the liquid level of the processing liquid stored in the inner tank, and The cover includes: Support member, which supports from above a plurality of substrates to be impregnated in the inner tank when the opening is closed; and An anti-retention mechanism prevents the processing liquid from remaining around the support member.

2. The substrate processing apparatus according to claim 1, wherein, The support member includes a plate-like member that extends downward from the lower surface of the cover when the opening is closed. The anti-stagnation mechanism is located closer to the base end of the support member than to the front end of the support member, and is a slit extending in the horizontal direction.

3. The substrate processing apparatus according to claim 1 or 2, wherein, The anti-retention mechanism includes a first gas discharge mechanism that, when the cover closes the opening, discharges gas toward the surface of the processed liquid located around the support member.

4. The substrate processing apparatus according to claim 3, wherein, The first gas discharge mechanism includes a plurality of first nozzle groups, each first nozzle group consisting of a plurality of first nozzles that discharge the gas in different directions.

5. The substrate processing apparatus according to claim 4, wherein, The plurality of first nozzles discharge the gas at an angle equal to or less than 45° relative to the surface of the processed liquid.

6. The substrate processing apparatus according to claim 4 or 5, wherein, One of the plurality of first nozzles discharges the gas at an angle equal to or greater than 45° relative to another of the plurality of first nozzles belonging to the same group of first nozzles.

7. The substrate processing apparatus according to claim 1 or 2, wherein, The anti-retention mechanism includes a second gas discharge mechanism that, when the cover closes the opening, discharges gas into the liquid of the treatment liquid located around the support member.

8. The substrate processing apparatus according to claim 7, wherein, The second gas discharge mechanism includes a plurality of second nozzle groups, each of which consists of a plurality of second nozzles that discharge the gas in different directions.

9. The substrate processing apparatus according to claim 8, wherein, The plurality of second nozzles discharge the gas at an angle equal to or less than 45° relative to the surface of the processed liquid.

10. The substrate processing apparatus according to claim 8 or 9, wherein, One of the plurality of second nozzles discharges the gas at an angle equal to or greater than 45° relative to another of the plurality of second nozzles belonging to the same group of second nozzles.

11. The substrate processing apparatus according to claim 7, wherein, The support member includes a plate-like member that extends downward from the lower surface of the cover when the opening is closed. The second gas discharge mechanism includes a pair of rod-shaped nozzles, which are respectively located on a pair of side surfaces of the support member.

12. The substrate processing apparatus according to claim 11, wherein, The paired rod-shaped nozzles discharge the gas at an angle equal to or less than 45° relative to the surface of the liquid being processed.

13. The substrate processing apparatus according to any one of claims 3 to 12, wherein, The gas includes nitrogen or dry air.

14. A substrate processing apparatus, comprising: An inner tank, which includes an opening in its upper part, for storing the processing liquid in the inner tank; An outer tank, located outside the inner tank, is used to receive the processed liquid flowing out from the opening; as well as A cover that closes or opens the opening of the inner groove. Wherein, when the opening is closed by the cover, a gap is formed between the lower surface of the cover and the liquid level of the processing liquid stored in the inner tank, and The cover includes: A support member that supports from above a plurality of substrates to be impregnated in the inner tank when the opening is closed.

15. A substrate processing method performed in a substrate processing apparatus, the substrate processing apparatus comprising an inner tank, an outer tank, and a cover, the inner tank including an opening in its upper portion for storing a processing liquid in the inner tank, the outer tank being located outside the inner tank to receive the processing liquid flowing out from the opening, the cover closing or opening the opening of the inner tank, wherein, With the opening closed, a gap is formed between the lower surface of the cover and the surface of the processing liquid stored in the inner tank. The cover includes a support member and a gas discharge mechanism. The support member supports multiple substrates to be immersed in the inner tank from above when the opening is closed. The gas discharge mechanism discharges gas toward the processing liquid surrounding the support member when the opening is closed. The substrate processing method includes: The plurality of substrates are immersed in the processing liquid in the inner tank; The cover closes the opening; The support member supports the plurality of substrates from above; The gas is discharged by the gas discharge mechanism; and To prevent the processing liquid from accumulating around the support member.

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