high frequency module

Abstract

A high-frequency module (1) includes: a module substrate (90); a power amplifier (11) disposed on the module substrate (90); a filter (31) disposed on the module substrate (90) and having a passband including a transmission band of a first FDD frequency band (band A) supporting a first power level, the filter (31) being connected to the power amplifier (11); and a filter (32) disposed on the module substrate (90) and having a passband including a transmission band of a second FDD frequency band (band B) supporting a second power level, a first TDD frequency band (band B) supporting the first power level, or a second TDD frequency band (band B) supporting the second power level, the second power level being defined by a maximum output power lower than the first power level, wherein, when the module substrate (90) is viewed from above, the filter (32) is disposed between the power amplifier (11) and the filter (31).

Description

Technical Field

[0001] This invention relates to a high-frequency module. Background Technology

[0002] In organizations such as 3GPP (3rd Generation Partnership Project), research is underway on utilizing power levels (e.g., power levels 2, 1.5, 1, etc.) in the Frequency Division Duplex (FDD) band, which are defined by higher maximum output power than previously available.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-063315 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] However, in the high-frequency circuit described in Patent Document 1, if a higher maximum output power than before is allowed in the FDD band, there is a situation where the characteristics of the filter deteriorate due to heat.

[0008] Therefore, the present invention provides a high-frequency module capable of suppressing the degradation of filter characteristics caused by heat.

[0009] Solution for solving the problem

[0010] One aspect of the present invention relates to a high-frequency circuit comprising: a module substrate; a first power amplifier disposed on the module substrate; a first filter disposed on the module substrate having a passband including a transmit band supporting a first FDD band of a first power level, the first filter being connected to the first power amplifier; and a second filter disposed on the module substrate having a transmit band including a second FDD band supporting a second power level, a first TDD band supporting the first power level, or a passband including a second TDD band supporting the second power level, the second power level being defined by a maximum output power lower than the first power level, wherein, when viewed from above the module substrate, the second filter is disposed between the first power amplifier and the first filter.

[0011] The effects of the invention

[0012] According to the present invention, it is possible to suppress the degradation of filter characteristics caused by heat. Attached Figure Description

[0013] Figure 1 This is a circuit diagram of the communication device involved in Embodiment 1.

[0014] Figure 2 This is a top view of the high-frequency module involved in Implementation Method 1.

[0015] Figure 3 This is a top view of the high-frequency module involved in Implementation Method 1.

[0016] Figure 4 This is a cross-sectional view of the high-frequency module involved in Implementation Method 1.

[0017] Figure 5A This is a partial cross-sectional view of the filter involved in Implementation Method 1.

[0018] Figure 5B This is a partial cross-sectional view of the filter involved in Implementation Method 1.

[0019] Figure 5C This is a partial cross-sectional view of the filter involved in Implementation Method 1.

[0020] Figure 6 This is a top view of the high-frequency module involved in Variation 1 of Embodiment 1.

[0021] Figure 7 This is a top view of the high-frequency module involved in Variation 2 of Embodiment 1.

[0022] Figure 8 This is a circuit diagram of the communication device involved in Embodiment 2.

[0023] Figure 9 This is a top view of the high-frequency module involved in Implementation Method 2.

[0024] Figure 10 This is a circuit diagram of the communication device involved in Embodiment 3.

[0025] Figure 11 This is a top view of the high-frequency module involved in Implementation Method 3.

[0026] Figure 12 This is a top view of the high-frequency module involved in Implementation Method 3.

[0027] Figure 13 This is a top view of the high-frequency module involved in Variation 1 of Embodiment 3. Detailed Implementation

[0028] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Furthermore, the embodiments described below are general or specific examples. The numerical values, shapes, materials, constituent elements, arrangements of constituent elements, and connection methods shown in the following embodiments are examples and are not intended to limit the present invention.

[0029] Furthermore, the figures are schematic diagrams that have been appropriately emphasized, omitted, or proportionally adjusted for the purpose of illustrating the invention, and are not necessarily strictly illustrative, sometimes differing from the actual shapes, positional relationships, and proportions. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0030] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. Specifically, when the module substrate has a rectangular shape when viewed from above, the x-axis is parallel to the first side of the module substrate, and the y-axis is parallel to the second side of the module substrate orthogonal to the first side. Additionally, the z-axis is an axis perpendicular to the main surface of the module substrate, with its positive direction representing the upward direction and its negative direction representing the downward direction.

[0031] In the following description of the circuit structure, "connection" includes not only direct connections via connection terminals and / or wiring conductors, but also connections via other circuit elements. "A and B are connected in a switchable manner" means that the connection and non-connection between A and B can be switched, meaning A is connected to B via a switch. Furthermore, "A and B connected" includes "A and B are connected in a switchable manner." "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, meaning C is connected in series in the path connecting A and B. "The path connecting A and B" refers to the path formed by conductors that electrically connect A and B.

[0032] A "terminal" refers to the point where a conductor within an element ends. Furthermore, when the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but also as any point on the conductors between elements or the entire conductor assembly.

[0033] The "passband of a filter" is the portion of the spectrum transmitted by the filter, defined as the frequency band where the output power does not decrease by more than 3dB compared to the maximum output power. Therefore, the high-frequency and low-frequency ends of the passband of a bandpass filter are determined by the higher and lower frequencies of the two points where the output power decreases by 3dB compared to the maximum output power.

[0034] "Transmit band" refers to the frequency band used for transmitting in a communication device, while "receive band" refers to the frequency band used for receiving in a communication device. For example, in the FDD band, different frequency bands (uplink band and downlink band) are used as the transmit and receive bands. Conversely, in the Time Division Duplex (TDD) band, the transmit and receive bands use the same frequency band.

[0035] "Power class" refers to a classification of the output power of user equipment, defined by its maximum output power. A lower power class value indicates a higher permissible maximum output power. For example, 3GPP specifies power classes 1, 1.5, 2, and 3. Specifically, in power class 1, the maximum output power is specified as 31 dBm. In power class 1.5, the maximum output power is specified as 29 dBm. In power class 2, the maximum output power is specified as 26 dBm. In power class 3, the maximum output power is specified as 23 dBm.

[0036] Furthermore, the maximum output power of the UE is defined by the maximum output power at the antenna end. The maximum output power of the UE is measured using methods defined by 3GPP, etc. For example, the maximum output power is measured by measuring the radiated power of the antenna. Alternatively, instead of measuring the radiated power, a terminal can be placed near the antenna, and the maximum output power of the antenna can be measured by connecting a measuring instrument (such as a spectrum analyzer) to that terminal.

[0037] "Frequency bands supporting power class" refers to frequency bands that can utilize that power class, as defined by standards and specifications. For example, in 3GPP, FDD frequency bands supporting power class 2 for 5G NR, such as n1, n2, n3, n5, n8, n13, n25, n26, n28, n66, n71, and n85, are under investigation.

[0038] "Component disposed on substrate" includes components disposed on the main surface of the substrate and components disposed within the substrate. "Component disposed on the main surface of substrate" includes, in addition to components disposed in contact with the main surface of the substrate, components disposed above the main surface without contact with it (e.g., components stacked on top of other components disposed in contact with the main surface). Additionally, "component disposed on the main surface of substrate" may also include components disposed in recesses formed on the main surface. "Component disposed within substrate" includes, in addition to components being encapsulated within a module substrate, components entirely disposed between two main surfaces of the substrate but with a portion of the component not covered by the substrate, and only a portion of the component disposed within the substrate.

[0039] "A is located between B and C" means that at least one of the line segments connecting any point in B to any point in C passes through A. "A is closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Conversely, "A is farther from C than B" means that the distance between A and C is longer than the distance between B and C. Here, "the distance between A(B) and C" refers to the length of the shortest line segment connecting any point in A(B) to any point in C.

[0040] "Viewing the module substrate from above" refers to observing an object by projecting it orthogonally onto a plane parallel to the main surface of the module substrate. In other words, "viewing the module substrate from above" means observing an object by projecting it orthogonally onto the xy plane from the positive z-axis side.

[0041] The "band gap" of a semiconductor material refers to the energy difference between the top of the valence band and the bottom of the conduction band. The band gap is an inherent value of semiconductor materials and is determined by detecting the semiconductor material.

[0042] Terms such as “parallel” and “perpendicular” that indicate the relationship between elements, and terms such as “rectangle” that indicate the shape of elements, and numerical ranges that do not only indicate a strict meaning but also include substantially equivalent ranges, such as a few percent of an error.

[0043] (Implementation Method 1)

[0044] Implementation method 1 will be described. The communication device 5 involved in this implementation method can be used to provide wireless connectivity. For example, the communication device 5 can be installed on a UE in a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by installing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, vehicles, unmanned aerial vehicles (UAVs), and automated guided vehicles (AGVs). In yet another example, by installing the communication device 5, wireless connectivity can also be provided using a wireless access point or wireless hotspot.

[0045] Reference Figure 1 The circuit structure of the communication device 5 and the high-frequency module 1 involved in this embodiment will be described. Figure 1 This is a circuit diagram of the communication device 5 involved in this embodiment.

[0046] also, Figure 1 The circuit structure provided is exemplary; the communication device 5 and the high-frequency module 1 can be installed using any of a variety of circuit mounting methods and circuit techniques. Therefore, the following description of the communication device 5 and the high-frequency module 1 should not be interpreted restrictively.

[0047] [1.1 Circuit structure of communication device 5]

[0048] First, refer to Figure 1The circuit structure of the communication device 5 according to this embodiment will be explained. The communication device 5 includes a high-frequency module 1, an antenna 2, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0049] The high-frequency module 1 is capable of transmitting high-frequency signals between the antenna 2 and the RFIC 3. The circuit structure of the high-frequency module 1 will be described later.

[0050] Antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1. Antenna 2 can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Alternatively, antenna 2 can also receive high-frequency signals from the outside of the communication device 5 and output them to the high-frequency module 1. Furthermore, antenna 2 may not be included in the communication device 5. Additionally, the communication device 5 may have one or more antennas besides antenna 2.

[0051] RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC 3 can process the transmit signal input from BBIC 4 through up-conversion or the like, and output the high-frequency transmit signal generated by the signal processing to high-frequency module 1. Furthermore, RFIC 3 can process the high-frequency receive signal input via the receive path of high-frequency module 1 through down-conversion or the like, and output the receive signal generated by the signal processing to BBIC 4. Additionally, RFIC 3 may also have a control unit that controls switches and power amplifiers in high-frequency module 1. Moreover, some or all of the functions of the control unit in RFIC 3 may be included externally to RFIC 3, for example, in BBIC 4 or high-frequency module 1.

[0052] BBIC 4 is a baseband signal processing circuit that performs signal processing using a frequency band lower than the frequency of the high-frequency signal transmitted by high-frequency module 1. Signals processed by BBIC 4 include, for example, image signals used for image display and / or sound signals used for communication via a speaker. Furthermore, BBIC 4 may not be included in the communication device 5.

[0053] [1.2 Circuit Structure of High-Frequency Module 1]

[0054] Next, refer to Figure 1The circuit structure of the high-frequency module 1 according to this embodiment will be described below. The high-frequency module 1 includes a power amplifier 11, a low-noise amplifier 21, filters 31, 32, 33, 34, 35 and 36, matching circuits 41, 42, 43, 44, 45 and 46, switching circuits 50 and 51, an antenna connection terminal 100, a high-frequency input terminal 111 and a high-frequency output terminal 121.

[0055] Antenna connection terminal 100 is an external connection terminal of high-frequency module 1. Antenna connection terminal 100 is connected to antenna 2 externally to high-frequency module 1 and to switching circuit 50 internally to high-frequency module 1. Thus, high-frequency module 1 can transmit signals to antenna 2 via antenna connection terminal 100 and receive signals from antenna 2.

[0056] The high-frequency input terminal 111 is an external connection terminal of the high-frequency module 1. The high-frequency input terminal 111 is connected externally to the RFIC 3 and internally to the power amplifier 11 of the high-frequency module 1. Thus, the high-frequency module 1 can provide the transmission signal from the RFIC 3 to the power amplifier 11 via the high-frequency input terminal 111.

[0057] The high-frequency output terminal 121 is an external connection terminal of the high-frequency module 1. The high-frequency output terminal 121 is externally connected to the RFIC 3 and internally connected to the low-noise amplifier 21 within the high-frequency module 1. Thus, the high-frequency module 1 can provide the received signal, amplified by the low-noise amplifier 21, to the RFIC 3 via the high-frequency output terminal 121.

[0058] Power amplifier 11, an example of a first power amplifier, is connected between the high-frequency input terminal 111 and filters 31-35. Specifically, the input terminal of power amplifier 11 is connected to the high-frequency input terminal 111. On the other hand, the output terminal of power amplifier 11 is connected to filters 31-35 in a switchable manner via matching circuit 46 and switching circuit 51. Power amplifier 11 can amplify the transmitted signal provided from RFIC 3 via high-frequency input terminal 111 using power supplied from a power source (not shown).

[0059] Furthermore, some or all of the power amplifier 11 may not be included in the high-frequency module 1. In this case, some or all of the power amplifier 11 may be connected between the RFIC 3 and the high-frequency input terminal 111, or may be included in the RFIC 3.

[0060] A low-noise amplifier 21 is connected between the filter 36 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier 21 is connected to the filter 36. On the other hand, the output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signal that has passed through the filter 36 using power supplied from a power source (not shown).

[0061] Furthermore, some or all of the low-noise amplifier 21 may not be included in the high-frequency module 1. In this case, some or all of the low-noise amplifier 21 may be connected between the high-frequency output terminal 121 and the RFIC 3, or it may be included in the RFIC 3.

[0062] Filter 31 is an example of a first filter and has a passband that includes the transmission band of frequency band A. Filter 31 is connected between antenna connection terminal 100 and power amplifier 11. Specifically, one end of filter 31 is switchably connected to antenna connection terminal 100 via matching circuit 41 and switching circuit 50. On the other hand, the other end of filter 31 is switchably connected to power amplifier 11 via switching circuit 51 and matching circuit 46. Filter 31 has a power tolerance corresponding to a first power level defined by a higher maximum output power.

[0063] The first power class is defined by a maximum output power higher than the second power class. The second power class is defined by a maximum output power lower than the first power class. For example, power class 2, power class 1.5, or power class 1 can be used as the first power class. For example, power class 3 can be used as the second power class. Furthermore, if a new power class is defined in the standard specification, that new power class can also be used as either the first or second power class based on its maximum output power.

[0064] Filter 32 is an example of a second filter, having a passband that includes the transmission band of frequency band B. Filter 32 is connected between antenna connection terminal 100 and power amplifier 11. Specifically, one end of filter 32 is switchably connected to antenna connection terminal 100 via matching circuit 42 and switching circuit 50. On the other hand, the other end of filter 32 is switchably connected to power amplifier 11 via switching circuit 51 and matching circuit 46.

[0065] Filter 33 is an example of a third filter, having a passband that includes the transmit frequency band C. Filter 33 is connected between antenna connection terminal 100 and power amplifier 11. Specifically, one end of filter 33 is switchably connected to antenna connection terminal 100 via matching circuit 43 and switching circuit 50. On the other hand, the other end of filter 33 is switchably connected to power amplifier 11 via switching circuit 51 and matching circuit 46. Filter 33 has power tolerance corresponding to a first power level defined by a higher maximum output power. Furthermore, filter 33 may not be included in high-frequency module 1.

[0066] Filter 34 is an example of a fourth filter, having a passband that includes the transmit band D. Filter 34 is connected between antenna connection terminal 100 and power amplifier 11. Specifically, one end of filter 34 is switchably connected to antenna connection terminal 100 via matching circuit 44 and switching circuit 50. On the other hand, the other end of filter 34 is switchably connected to power amplifier 11 via switching circuit 51 and matching circuit 46. Filter 34 has power tolerance corresponding to the first power level. Furthermore, filter 34 may not be included in the high-frequency module 1.

[0067] Filter 35 is an example of a fifth filter, having a passband that includes the transmit band E. Filter 35 is connected between antenna connection terminal 100 and power amplifier 11. Specifically, one end of filter 35 is switchably connected to antenna connection terminal 100 via matching circuit 45 and switching circuit 50. On the other hand, the other end of filter 35 is switchably connected to power amplifier 11 via switching circuit 51 and matching circuit 46. Furthermore, filter 35 may not be included in high-frequency module 1.

[0068] Filter 36 is an example of a sixth filter, having a passband that includes the receive frequency band of band A. Filter 36 is connected between antenna connection terminal 100 and low-noise amplifier 21. Specifically, one end of filter 36 is switchably connected to antenna connection terminal 100 via matching circuit 41 and switching circuit 50. On the other hand, the other end of filter 36 is connected to low-noise amplifier 21.

[0069] Frequency bands A through E are frequency bands used in communication systems built using Radio Access Technology (RAT). Frequency bands A through E are predefined by standardization bodies such as 3GPP and IEEE (Institute of Electrical and Electronics Engineers). Examples of communication systems include 5G NR (5th Generation New Radio) systems, LTE (Long Term Evolution) systems, and WLAN (Wireless Local Area Network) systems.

[0070] Frequency band A is an example of a first FDD frequency band, which is an FDD frequency band that supports the first power level. For example, frequency bands n1, n3, n8, n26, n28, or n66 used for 5G NR can be used as frequency band A. However, frequency band A is not limited to these bands. For example, LTE frequency bands can also be used as frequency band A.

[0071] Frequency band B is an example of a second FDD band, a first TDD band, and a second TDD band. It is an FDD band supporting a second power level (second FDD band), a TDD band supporting a first power level (first TDD band), or a TDD band supporting a second power level (second TDD band). For example, n12, n13, n40, or n41 used for 5G NR can be used as frequency band B. However, frequency band B is not limited to these bands. For example, LTE bands can also be used as frequency band B.

[0072] Band C is an example of a third FDD band, which is an FDD band supporting the first power level. As Band C, a different frequency band than Band A is used, such as n1, n3, n8, n26, n28, or n66 used for 5G NR. However, Band C is not limited to these frequency bands. For example, LTE frequency bands can also be used as Band C.

[0073] Band D is an example of the fourth FDD band, and it is an FDD band that supports the first power level. As band D, a different frequency band than bands A and C is used, such as n1, n3, n8, n26, n28, or n66 used for 5G NR. However, band D is not limited to these bands. For example, LTE frequency bands can also be used as band D.

[0074] Frequency band E is an example of the fifth FDD band, the third TDD band, and the fourth TDD band. It is an FDD band supporting the second power level (fifth FDD band), a TDD band supporting the first power level (third TDD band), or a TDD band supporting the second power level (fourth TDD band). Frequency band E uses a different frequency band than frequency band B, such as n12, n13, n40, or n41 used for 5G NR. However, frequency band E is not limited to these bands. For example, LTE frequency bands can also be used as frequency band E.

[0075] A matching circuit (matching network) 41 is connected between the switching circuit 50 and the filters 31 and 36 to achieve impedance matching between the switching circuit 50 and the filters 31 and 36. The matching circuit 41 may, for example, include an inductor and / or capacitor (so-called parallel inductor and / or parallel capacitor) connected between the path connecting the switching circuit 50 and the filters 31 and 36 and ground. Alternatively, the matching circuit 41 may also include an inductor and / or capacitor (so-called series inductor and / or series capacitor) connected between the switching circuit 50 and the filters 31 and 36. Furthermore, the matching elements included in the matching circuit 41 are not limited to inductors and / or capacitors. Additionally, the matching circuit 41 may not be included in the high-frequency module 1.

[0076] A matching circuit (matching network) 42 is connected between the switching circuit 50 and the filter 32 to achieve impedance matching between them. The matching circuit 42 may include, for example, a parallel inductor and / or a parallel capacitor, or it may include a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 42 are not limited to inductors and / or capacitors. Additionally, the matching circuit 42 may not be included in the high-frequency module 1.

[0077] A matching circuit (matching network) 43 is connected between the switching circuit 50 and the filter 33 to achieve impedance matching between them. The matching circuit 43 may include, for example, a parallel inductor and / or a parallel capacitor, or a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 43 are not limited to inductors and / or capacitors. Alternatively, the matching circuit 43 may not be included in the high-frequency module 1.

[0078] A matching circuit (matching network) 44 is connected between the switching circuit 50 and the filter 34 to achieve impedance matching between them. The matching circuit 44 may include, for example, a parallel inductor and / or a parallel capacitor, or a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 44 are not limited to inductors and / or capacitors. Alternatively, the matching circuit 44 may not be included in the high-frequency module 1.

[0079] A matching circuit (matching network) 45 is connected between the switching circuit 50 and the filter 35 to achieve impedance matching between them. The matching circuit 45 may include, for example, a parallel inductor and / or a parallel capacitor, or a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 45 are not limited to inductors and / or capacitors. Alternatively, the matching circuit 45 may not be included in the high-frequency module 1.

[0080] A matching circuit (matching network) 46 is connected between the switching circuit 51 and the power amplifier 11 to achieve impedance matching between them. The matching circuit 46 may include, for example, a parallel inductor and / or a parallel capacitor, or a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 46 are not limited to inductors and / or capacitors. Additionally, the matching circuit 46 may not be included in the high-frequency module 1.

[0081] A switching circuit 50 is connected between the antenna connection terminal 100 and filters 31-36. Specifically, the switching circuit 50 includes a common terminal 500 and selection terminals 501, 502, 503, 504, and 505. The common terminal 500 is connected to the antenna connection terminal 100. Selection terminal 501 is connected to filters 31 and 36 via matching circuit 41. Selection terminal 502 is connected to filter 32 via matching circuit 42. Selection terminal 503 is connected to filter 33 via matching circuit 43. Selection terminal 504 is connected to filter 34 via matching circuit 44. Selection terminal 505 is connected to filter 35 via matching circuit 45.

[0082] In such a connection structure, the switching circuit 50 can, for example, connect the common terminal 500 exclusively to the selection terminals 501-505 based on a digital control signal from the RFIC 3. That is, in the switching circuit 50, the common terminal 500 is selectively connected to the selection terminals 501-505. The switching circuit 50 is, for example, constructed using an SP5T type switching circuit. Furthermore, the switching circuit 50 may not be included in the high-frequency module 1.

[0083] Switching circuit 51, an example of a first switching circuit, is connected between filters 31-35 and power amplifier 11. Specifically, switching circuit 51 includes a common terminal 510 and selection terminals 511, 512, 513, 514, and 515. Common terminal 510, an example of a first common terminal, is connected to power amplifier 11 via matching circuit 46. Selection terminal 511, an example of a first selection terminal, is connected to filter 31. Selection terminal 512, an example of a second selection terminal, is connected to filter 32. Selection terminal 513, an example of a third selection terminal, is connected to filter 33. Selection terminal 514, an example of a fourth selection terminal, is connected to filter 34. Selection terminal 515, an example of a fifth selection terminal, is connected to filter 35.

[0084] In such a connection structure, the switching circuit 51 can, for example, connect the common terminal 510 exclusively to the selection terminals 511-515 based on a digital control signal from the RFIC 3. That is, in the switching circuit 51, the common terminal 510 is selectively connected to the selection terminals 511-515. The switching circuit 51 is, for example, constructed using an SP5T type switching circuit. Furthermore, the switching circuit 51 may not be included in the high-frequency module 1. In this case, the high-frequency module 1 may also include at least one power amplifier.

[0085] [1.3 Installation Example of High-Frequency Module 1]

[0086] Next, refer to Figures 2-4 An example of installing a high-frequency module 1 with the circuit structure described above will be explained. Figure 2 This is a top view of the high-frequency module 1 involved in this embodiment. Figure 3 This is a top view of the high-frequency module 1 involved in this embodiment, which is a view of the main surface 90b of the module substrate 90 from the z-axis positive side. Figure 4 This is a cross-sectional view of the high-frequency module 1 involved in this embodiment. Figure 4 The cross-section of the high-frequency module 1 in the middle is Figure 2 and Figure 3 The cross section at line iv-iv.

[0087] exist Figures 2-4 In order to easily understand the configuration relationship of each component, sometimes each component is labeled with a label indicating that component (e.g., "PA"), but it is also possible not to label the actual components. Additionally, in... Figure 2 and Figure 3 The illustrations of resin components 91 and 92 covering multiple circuit components and metal shielding 93 covering resin components 91 and 92 are omitted.

[0088] also, Figures 2-4An example of mounting the high-frequency module 1 is shown. The high-frequency module 1 can be mounted using any of a variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1 should not be interpreted restrictively.

[0089] High-frequency module 1, in addition to Figure 1 In addition to the multiple circuit components shown, it also includes metal components 61 and 62, a module substrate 90, resin components 91 and 92, a metal shield 93, and multiple external connection terminals 94.

[0090] The module substrate 90 has main surfaces 90a and 90b facing each other. Main surface 90a is an example of a first main surface, sometimes referred to as the upper surface or surface. Main surface 90b is an example of a second main surface, sometimes referred to as the lower surface or back surface. Wiring and through conductors are formed in the module substrate 90 and on the main surfaces 90a and 90b, but their illustrations are omitted.

[0091] The module substrate 90 can be, for example, a low-temperature co-fired ceramic (LTCC) substrate or a high-temperature co-fired ceramic (HTCC) substrate with a multi-dielectric layer stacked structure, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

[0092] The resin component 91 covers the main surface 90a of the module substrate 90 and at least a portion of the circuit components on the main surface 90a. Furthermore, the resin component 91 does not cover at least a portion of the top surface of each of the filters 31-36, and the top surface of each of the filters 31-36 is exposed from the resin component 91 and in contact with the metal shield 93. Epoxy resin can be used as the material for the resin component 91, but it is not limited to this. The resin component 91 serves to ensure the reliability of the circuit components on the main surface 90a, including mechanical strength and moisture resistance. Furthermore, the resin component 91 is not necessarily included in the high-frequency module 1.

[0093] The resin component 92 covers the main surface 90b of the module substrate 90 and at least a portion of the circuit components on the main surface 90b. Alternatively, the resin component 92 may not cover at least a portion of the top surface of the integrated circuit 20. That is, at least a portion of the top surface of the integrated circuit 20 may be exposed from the resin component 92. Epoxy resin can be used as the material for the resin component 92, but it is not limited to this. The resin component 92 serves to ensure the reliability of the circuit components on the main surface 90b, including mechanical strength and moisture resistance. Furthermore, the resin component 92 is not necessarily included in the high-frequency module 1.

[0094] Metal shielding component 93 is, for example, a thin metal film formed by sputtering. Figure 4 As shown, the metal shield 93 covers the surfaces of the resin components 91 and 92. Additionally, the metal shield 93 also covers the top surfaces of filters 31-36. The metal shield 93 is connected to ground, enabling it to suppress external noise from entering the high-frequency module 1 and to suppress noise generated in the high-frequency module 1 from interfering with other modules or devices.

[0095] Multiple external connection terminals 94 are disposed on the main surface 90b of the module substrate 90. The multiple external connection terminals 94 include... Figure 1 The antenna connection terminal 100, high-frequency input terminal 111, and high-frequency output terminal 121 are shown. Furthermore, the plurality of external connection terminals 94 include a ground terminal connected to ground. The plurality of external connection terminals 94 are electrically connected to input / output terminals and / or ground terminals, etc., on a mother substrate (not shown) arranged in the negative z-axis direction of the high-frequency module 1. Copper electrodes or solder electrodes can be used as the plurality of external connection terminals 94, but are not limited to these.

[0096] Here, refer to Figures 2-4 The components arranged on the main surfaces 90a and 90b of the module substrate 90 will be described.

[0097] The power amplifier 11 (PA) is disposed on the main surface 90a of the module substrate 90. The power amplifier 11 can be constructed from a heterojunction bipolar transistor (HBT) and can be manufactured using semiconductor materials. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as semiconductor materials. Furthermore, the amplifying transistor of the power amplifier 11 is not limited to an HBT. For example, the power amplifier 11 can also be constructed from a high-electron-mobility transistor (HEMT) or a metal-semiconductor field-effect transistor (MESFET). In this case, gallium nitride (GaN) or silicon carbide (SiC) can also be used as semiconductor materials.

[0098] Filter 31 (A-Tx(PC2-FDD)) is disposed on the main surface 90a of module substrate 90. When viewed from above, filter 31 is disposed further away from power amplifier 11 than filters 32, 35, and 36. That is, the distance between filter 31 and power amplifier 11 is longer than the distances between filters 32, 35, and 36 and power amplifier 11 respectively. Furthermore, when viewed from above, filter 31 is closer to the outer edge of module substrate 90 than filter 36. That is, the distance between filter 31 and the outer edge of module substrate 90 is shorter than the distance between filter 36 and the outer edge of module substrate 90.

[0099] Filter 32 (B-Tx(PC3-FDD / TDD, PC2-TDD)) is disposed on the main surface 90a of module substrate 90. When viewed from above, filter 32 is disposed between power amplifier 11 and filters 31, 33, 34 and 36.

[0100] Filter 33 (C-Tx(PC2-FDD)) is disposed on the main surface 90a of module substrate 90. When viewed from above, filter 33 is farther from power amplifier 11 than filters 32 and 35. That is, the distance between filter 33 and power amplifier 11 is longer than the distance between filters 32 and 35 and power amplifier 11 respectively.

[0101] Filter 34 (D-Tx(PC2-FDD)) is disposed on the main surface 90a of module substrate 90. When viewed from above, filter 34 is farther from power amplifier 11 than filters 32 and 35. That is, the distance between filter 34 and power amplifier 11 is longer than the distance between filters 32 and 35 and power amplifier 11 respectively.

[0102] Filter 35 (E-Tx(PC3-FDD / TDD, PC2-TDD)) is disposed on the main surface 90a of module substrate 90. When viewed from above, filter 35 is disposed between power amplifier 11 and filters 31, 33, 34 and 36.

[0103] Filter 36 (A-Rx) is disposed on the main surface 90a of module substrate 90. When viewed from above, filter 36 is disposed between power amplifier 11 and filter 31.

[0104] The top surface of each of filters 31-36 protrudes from the resin member 91 and contacts the metal shield 93. Alternatively, some or all of filters 31-36 may not contact the metal shield 93. Or, only a portion of their top surface may contact the metal shield 93.

[0105] Filters 31-36 are installed as surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC resonant filters, dielectric resonant filters, or any combination thereof. For example, filters 31, 33, and 34 can also be BAW filters with higher power tolerance, and the remaining filters can also be SAW filters. Furthermore, filters 31-36 are not limited to these types of filters.

[0106] Matching circuits 41-45 (MN(ANT)) and matching circuit 46 (MN(PA)) are disposed on the main surface 90a of the module substrate 90, and are mounted, for example, as surface-mount inductors and / or surface-mount capacitors. Surface-mount inductors and / or surface-mount capacitors refer to surface-mount devices (SMD) that constitute inductors and / or capacitors. Furthermore, matching circuits 41-46 are not limited to surface-mount inductors and / or surface-mount capacitors. For example, part or all of the matching circuits 41-46 can also be mounted by means of wiring patterns formed on the module substrate 90.

[0107] Metal component 61 is a shielding wall erected on the main surface 90a of the module substrate 90, with its top end connected to metal shield 93. Viewed from above, metal component 61 is positioned between power amplifier 11 and filters 31, 33, 34, and 36. Furthermore, metal component 61 is not limited to a metal wall or metal plate. For example, metal component 61 can be multiple bonding leads or multiple pillar electrodes.

[0108] Metal component 62 is a shielding wall erected on the main surface 90a of the module substrate 90, with its top end connected to metal shield 93. Viewed from above, metal component 62 is positioned between power amplifier 11 and filters 31 and 36. Furthermore, metal component 62 is not limited to a metal wall or metal plate. For example, metal component 62 can be multiple bonding leads or multiple pillar electrodes.

[0109] An integrated circuit 20 (IC) is disposed on the main surface 90b of the module substrate 90, and includes a low-noise amplifier 21 and switching circuits 50 and 51. The integrated circuit 20 can be manufactured using semiconductor materials. Examples of semiconductor materials include single-crystal silicon, gallium nitride (GaN), or silicon carbide (SiC).

[0110] The low-noise amplifier 21 (LNA), switching circuit 50 (SW(ANT)), and switching circuit 51 (SW(PA)) can be constructed using field-effect transistors (FETs). Furthermore, the amplifying transistors of the low-noise amplifier 21 and the switches included in switching circuits 50 and 51 are not limited to FETs. For example, some or all of the low-noise amplifier 21 and switching circuits 50 and 51 can also be constructed using bipolar transistors.

[0111] Furthermore, the low-noise amplifier 21 and the switching circuits 50 and 51 may not be included in a single integrated circuit. For example, the low-noise amplifier 21 may be included in a different integrated circuit than the switching circuits 50 and 51. In this case, the switching circuit 51 may also be included in the same integrated circuit as the control circuit (not shown) that controls the power amplifier 11.

[0112] Furthermore, the installation of high-frequency module 1 is not limited to Figures 2-4 Installation example. For example, the high-frequency module 1 may not be installed on both sides of the module substrate 90, but on only one side of the module substrate 90.

[0113] [1.4 Structure of filters 31, 33 and 34]

[0114] Next, refer to Figures 5A-5C Several examples of the structures of filters 31, 33, and 34 are explained. Figures 5A-5C These are partial cross-sectional views of filters 31, 33, and 34 involved in this embodiment.

[0115] also, Figures 5A-5C The examples shown below illustrate the illustrative structures. Filters 31, 33, and 34 can be installed using any of a wide variety of circuit mounting methods and circuit techniques. Therefore, the descriptions of filters 31, 33, and 34 provided below should not be interpreted restrictively.

[0116] exist Figure 5A In the example, filters 31, 33 and 34 are each SAW filters, including a piezoelectric layer 301, a low-velocity layer 302, a high-velocity layer 303, a support substrate 304 and an IDT (interdigital transducer) electrode 305.

[0117] The piezoelectric layer 301 is a piezoelectric layer stacked on the low-velocity acoustic layer 302, capable of propagating surface acoustic waves. An IDT electrode 305 is disposed on the piezoelectric layer 301. As a material for the piezoelectric layer 301, for example, piezoelectric single crystals or piezoelectric ceramics such as lithium tantalate (LiTaO3), lithium niobate (LiNbO3), aluminum nitride, or zinc oxide can be used. However, the material of the piezoelectric layer 301 is not limited to these materials.

[0118] A low-velocity layer 302 is stacked on top of a high-velocity layer 303 and disposed between the piezoelectric layer 301 and the high-velocity layer 303. The sound speed of bulk waves propagating in the low-velocity layer 302 is lower than that of elastic waves such as surface waves and boundary waves propagating in the piezoelectric layer 301. The material of the low-velocity layer 302 can be, for example, a dielectric material such as silicon dioxide, glass, silicon oxynitride, lithium oxide, tantalum oxide, or a compound obtained by adding fluorine, carbon, or boron to silicon dioxide, or any combination thereof. Furthermore, the material of the low-velocity layer 302 is not limited to these materials.

[0119] A high-velocity acoustic layer 303 is stacked on a support substrate 304 and disposed between a low-velocity acoustic layer 302 and the support substrate 304. The high-velocity acoustic layer 303 can confine the surface acoustic waves generated by the resonator within the portion formed by the stacked piezoelectric layer 301 and the low-velocity acoustic layer 302, thereby preventing leakage to layers lower than the high-velocity acoustic layer 303. The sound speed of the bulk waves propagating in the high-velocity acoustic layer 303 is higher than that of elastic waves such as surface waves and boundary waves propagating in the piezoelectric layer 301. Materials for the high-velocity acoustic layer 303 can include, for example, piezoelectric materials such as silicon nitride, aluminum nitride, lithium tantalate, lithium niobate, and quartz; ceramics such as alumina, sapphire, magnesium oxide, silicon carbide, zirconium oxide, cordierite, mullite, talc, and forsterite; dielectrics such as diamond and glass; semiconductors such as silicon and gallium nitride; resins; or any combination thereof. Furthermore, the material of the high-velocity acoustic layer 303 is not limited to these materials.

[0120] The support substrate 304 can support the high-velocity acoustic layer 303, the low-velocity acoustic layer 302, and the piezoelectric layer 301. The support substrate 304 is made of a semiconductor material with a larger bandgap than silicon (Si) (so-called wide-bandgap material) or an insulating material. Specifically, as the wide-bandgap material for the support substrate 304, examples include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), diamond, aluminum nitride (AlN), sapphire, or any combination thereof. Furthermore, as the insulating material for the support substrate 304, examples include spinel (MgAl2O4), yttrium aluminum garnet (Y3Al5O4), etc. 12 The material of the support substrate 304 is not limited to these materials, including quartz, mullite (3Al2O32SiO2 or 2Al2O3SiO2), silane (SiAlON), or any combination thereof.

[0121] The IDT electrode 305 is disposed on the piezoelectric layer 301 and is capable of converting electrical signals into surface acoustic waves and inversely converting surface acoustic waves into electrical signals. The material of the IDT electrode 305 can be, for example, aluminum, titanium, gold, silver, copper, platinum, tungsten, molybdenum, ruthenium, or any combination thereof. Furthermore, the material of the IDT electrode 305 is not limited to these materials.

[0122] exist Figure 5B In the example, filters 31, 33 and 34 each include a piezoelectric layer 301, a low acoustic impedance layer 312, a high acoustic impedance layer 313, a support substrate 304 and an IDT electrode 305.

[0123] The low acoustic impedance layer 312 and the high acoustic impedance layer 313 are acoustic multilayer films alternately stacked on the support substrate 304. Furthermore, the number of layers of the low acoustic impedance layer 312 and the high acoustic impedance layer 313 is not limited to [specific number of layers]. Figure 5B Examples.

[0124] The low acoustic impedance layer 312 has a lower inherent acoustic impedance than the high acoustic impedance layer 313. Materials used for the low acoustic impedance layer 312 include, for example, silicon oxide (SiO2), aluminum nitride (AlN), or any combination thereof. Furthermore, the material of the low acoustic impedance layer 312 is not limited to these materials.

[0125] The high acoustic impedance layer 313 has a lower inherent acoustic impedance than the low acoustic impedance layer 312. Materials used for the high acoustic impedance layer 313 include, for example, tungsten (W), molybdenum (Mo), tantalum oxide (Ta2O5), zinc oxide (ZnO), or any combination thereof. Furthermore, the material of the high acoustic impedance layer 313 is not limited to these materials.

[0126] exist Figure 5C In the example, filters 31, 33 and 34 each include a piezoelectric layer 301, an intermediate layer 322, a support substrate 304 and an IDT electrode 305.

[0127] An intermediate layer 322 is stacked on the support substrate 304, forming a gap below the piezoelectric layer 301. Thus, the IDT electrode 305 and the piezoelectric layer 301 function as a laterally excited bulk acoustic resonator (XBAR). Alternatively, the intermediate layer 322 can also be integrated with the support substrate 304.

[0128] [1.5 Summary]

[0129] As described above, the high-frequency module 1 according to this embodiment includes: a module substrate 90; a power amplifier 11 disposed on the module substrate 90; a filter 31 disposed on the module substrate 90 and having a passband including a transmission band supporting a first FDD band (band A) supporting a first power level, the filter 31 being connected to the power amplifier 11; and a filter 32 disposed on the module substrate 90 and having a transmission band including a second FDD band (band B) supporting a second power level, a first TDD band (band B) supporting a first power level, or a second TDD band (band B) supporting a second power level, the second power level being defined by a maximum output power lower than the first power level, wherein, when viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11 and the filter 31.

[0130] Therefore, heat propagation from power amplifier 11 to filter 31 is reduced by filter 32 disposed between power amplifier 11 and filter 31. Consequently, it is possible to suppress the degradation of filter 31's characteristics due to temperature rise caused by heat generated in power amplifier 11. In particular, filter 31, which supports a first FDD band for a first power level allowing higher maximum output power, generates more heat and is more prone to temperature rise compared to filter 32, which supports a second FDD band for a second power level, a first TDD band for a first power level, or a second TDD band for a second power level. Therefore, the effect of suppressing filter 31's characteristic degradation by reducing heat propagation from power amplifier 11 to filter 31 is greater.

[0131] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include a switching circuit 51, which is disposed on the module substrate 90 and includes a common terminal 510 connected to the output terminal of the power amplifier 11, a selection terminal 511 connected to the filter 31, and a selection terminal 512 connected to the filter 32.

[0132] Therefore, filters 31 and 32 can be selectively connected to power amplifier 11. Thus, when filter 31 is connected to power amplifier 11, filter 32 is not connected to power amplifier 11, thereby further reducing heat propagation from power amplifier 11 to filter 31.

[0133] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include a filter 33, which is disposed on the module substrate 90 and has a passband that includes a transmission band that supports a third FDD band of the first power level. The switching circuit 51 also includes a selection terminal 513 connected to the filter 33. When viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11 and the filter 33.

[0134] Therefore, heat propagation from power amplifier 11 to filter 33 is also reduced by filter 32 disposed between power amplifier 11 and filter 33. Thus, it is possible to suppress the degradation of filter 33's characteristics due to temperature rise caused by heat generated in power amplifier 11. In particular, filter 33, used to support the third FDD band of the first power level allowing higher maximum output power, generates more heat and is more prone to temperature rise compared to filter 32, used to support the second FDD band of the second power level, the first TDD band of the first power level, or the second TDD band of the second power level. Therefore, the effect of suppressing filter 33's characteristic degradation by reducing heat propagation from power amplifier 11 to filter 33 is greater.

[0135] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include a filter 34, which is disposed on the module substrate 90 and has a passband that includes a transmission band that supports a fourth FDD band of the first power level. The switching circuit 51 also includes a selection terminal 514 connected to the filter 34. When viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11 and the filter 34.

[0136] Therefore, heat propagation from power amplifier 11 to filter 34 is also reduced by filter 32 disposed between power amplifier 11 and filter 34. Thus, it is possible to suppress the degradation of filter 34's characteristics due to temperature rise caused by heat generated in power amplifier 11. In particular, filter 34, which supports the fourth FDD band of the first power level allowing higher maximum output power, generates more heat and is more prone to temperature rise compared to filter 32, which supports the second FDD band of the second power level, the first TDD band of the first power level, or the second TDD band of the second power level. Therefore, the reduction in heat propagation from power amplifier 11 to filter 34 has a greater effect on suppressing the degradation of filter 34's characteristics.

[0137] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include a filter 35, which is disposed on the module substrate 90 and has a transmit band including a fifth FDD band supporting a second power level, a third TDD band supporting a first power level, or a fourth TDD band supporting a second power level. The switching circuit 51 also includes a selection terminal 515 connected to the filter 35. When viewed from above the module substrate 90, the filter 35 is disposed between the power amplifier 11 and the filter 31.

[0138] Therefore, heat propagation from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by filter 35. Consequently, it is possible to further suppress the degradation of filter 31's characteristics due to the temperature rise caused by the heat generated in power amplifier 11.

[0139] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include: a low-noise amplifier 21 disposed on the module substrate 90; and a filter 36 disposed on the module substrate 90, having a passband that includes a receiving frequency band of the first FDD band. The filter 36 is connected to the low-noise amplifier 21. When viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11 and the filter 36.

[0140] Therefore, heat propagation from power amplifier 11 to filter 36 is reduced by filter 32 disposed between power amplifier 11 and filter 36. Thus, it is possible to suppress the degradation of filter 36's characteristics due to temperature rise caused by heat generated in power amplifier 11.

[0141] Alternatively, for example, in the high-frequency module 1 of this embodiment, when viewed from above the module substrate 90, the filter 36 is disposed between the power amplifier 11 and the filter 31.

[0142] Therefore, heat propagation from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by filter 36. Consequently, it is possible to further suppress the degradation of filter 31's characteristics due to the temperature rise caused by the heat generated in power amplifier 11.

[0143] Alternatively, for example, in the high-frequency module 1 of this embodiment, when viewed from above the module substrate 90, the filter 31 is closer to the outer edge of the module substrate 90 than the filter 36.

[0144] Therefore, by configuring the filter 31 closer to the outer edge of the module substrate 90, heat dissipation from the filter 31 to the outside of the high-frequency module 1 is increased. Consequently, the temperature rise of the filter 31 and the resulting degradation of its characteristics can be further suppressed.

[0145] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include metal components 61 and / or 62, which are disposed between the power amplifier 11 and the filter 31 when viewed from above the module substrate 90.

[0146] Therefore, heat propagation from the power amplifier 11 to the filter 31 is reduced by the metal components 61 and / or 62 disposed between the power amplifier 11 and the filter 31. Consequently, the degradation of the filter 31's characteristics due to the temperature rise caused by the heat generated in the power amplifier 11 can be further suppressed.

[0147] Alternatively, for example, in the high-frequency module 1 according to this embodiment, the module substrate 90 has main surfaces 90a and 90b facing each other. The power amplifier 11, filter 31 and filter 32 are disposed on the main surface 90a. The high-frequency module 1 also includes: a plurality of external connection terminals 94 disposed on the main surface 90b; a resin member 91 disposed on the main surface 90a and covering at least a portion of the power amplifier 11, filter 31 and filter 32; and a metal shield 93 covering at least a portion of the surface of the resin member 91, wherein at least a portion of the filter 32 may also contact the metal shield 93.

[0148] As a result, heat dissipation from filter 32 to the outside of high-frequency module 1 increases. Consequently, heat propagation from power amplifier 11 to filter 31 via filter 32 is further reduced, which can further suppress the degradation of filter 31's characteristics.

[0149] Alternatively, for example, in the high-frequency module 1 involved in this embodiment, the filter 31 is a surface acoustic wave filter including a piezoelectric layer 301 and a support substrate 304, and the support substrate 304 is made of a semiconductor material or an insulating material with a band gap larger than that of silicon.

[0150] Therefore, the support substrate 304, made of a semiconductor material or an insulating material with a larger bandgap than silicon, can suppress the decrease in resistance caused by temperature rise, and in particular, can raise the temperature at which the resistance begins to decrease compared to a silicon substrate. Thus, the filter 31, by virtue of the support substrate 304 made of a semiconductor material or an insulating material with a larger bandgap than silicon, can suppress the characteristic degradation at high temperatures compared to a silicon substrate. In particular, the temperature of the filter 31, used to support the first FDD band of the first power level that allows for higher maximum output power, tends to rise easily; therefore, the suppression effect on characteristic degradation at high temperatures is significant.

[0151] Alternatively, for example, in the high-frequency module 1 of this embodiment, the filter 31 may be a surface acoustic wave filter including a piezoelectric layer 301 and a support substrate 304. The support substrate 304 may also be made of silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), diamond, aluminum nitride (AlN), sapphire, spinel (MgAl2O4), or yttrium aluminum garnet (Y3Al5O4). 12It is composed of at least one of the following: quartz, mullite (3Al2O32SiO2 or 2Al2O3SiO2), and silon (SiAlON).

[0152] Therefore, the support substrate 304, made of the aforementioned semiconductor material or insulating material, can suppress the decrease in resistance caused by temperature rise, and in particular, can increase the temperature at which resistance begins to decrease compared to a silicon substrate. Thus, the filter 31, thanks to the support substrate 304 made of the aforementioned semiconductor material or insulating material, can suppress characteristic degradation at high temperatures compared to a silicon substrate. In particular, the filter 31, used to support the first FDD band of the first power level that allows for higher maximum output power, is prone to temperature rise; therefore, the suppression effect on characteristic degradation at high temperatures is significant.

[0153] (Modification 1 of Implementation Method 1)

[0154] Next, a variation of Embodiment 1 will be described. The main difference between this variation and Embodiment 1 is the arrangement of filters 31 and 36 on the main surface 90a of the module substrate 90. Hereinafter, this variation will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 1. Furthermore, the circuit structures of the communication device 5 and the high-frequency module 1 involved in this variation are the same as those of the communication device 5 and the high-frequency module 1 involved in Embodiment 1, therefore, the illustrations and their descriptions are omitted.

[0155] [1.6 Installation Example of High-Frequency Module 1]

[0156] Reference Figure 6 An installation example of the high-frequency module 1 involved in this variation will be described. Figure 6 This is a top view of the high-frequency module 1 involved in this variation. Figure 6 In order to easily understand the configuration relationship of each component, sometimes each component is labeled with a label indicating that component (e.g., "PA"), but it is also possible not to label the actual components. Additionally, in... Figure 6 The illustrations of resin components 91 and 92 covering multiple circuit components and metal shielding 93 covering resin components 91 and 92 are omitted.

[0157] also, Figure 6 An example of mounting the high-frequency module 1 is shown. The high-frequency module 1 can be mounted using any of a variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1 should not be interpreted restrictively.

[0158] Similar to Embodiment 1, when viewed from above the module substrate 90, filters 32 and 35 are disposed between the power amplifier 11 and filters 31, 33, 34, and 36. However, in this modified example, the positions of filters 31 and 36 are interchanged. Thus, when viewed from above the module substrate 90, filter 31 is disposed between the power amplifier 11 and filter 36, and filter 36 is closer to the outer edge of the module substrate 90 than filter 31.

[0159] [1.7 Summary]

[0160] As described above, in the high-frequency module 1 involved in this variation, the filter 31 may be disposed between the power amplifier 11 and the filter 36 when viewed from above the module substrate 90.

[0161] Therefore, heat propagation from power amplifier 11 to filter 36 is reduced not only by filter 32 but also by filter 31. Consequently, it is possible to further suppress the degradation of filter 36's characteristics due to temperature rise caused by heat generated in power amplifier 11. In particular, it is effective in improving the reception characteristics of signals in the first FDD band.

[0162] (Modification 2 of Implementation Method 1)

[0163] Next, a variation of Embodiment 1, 2, will be described. The main difference between this variation and Embodiment 1 is the arrangement of filters 31 and 32 and matching circuit 46 on the main surface 90a of the module substrate 90. Hereinafter, this variation will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 1.

[0164] [1.8 Installation Example of High-Frequency Module 1]

[0165] Reference Figure 7 An installation example of the high-frequency module 1 involved in this variation will be described. Figure 7 This is a top view of the high-frequency module 1 involved in this variation. Figure 7 In order to easily understand the configuration relationship of each component, sometimes each component is labeled with a label indicating that component (e.g., "PA"), but it is also possible not to label the actual components. Additionally, in... Figure 7 The illustrations of resin components 91 and 92 covering multiple circuit components and metal shielding 93 covering resin components 91 and 92 are omitted.

[0166] also, Figure 7 An example of mounting the high-frequency module 1 is shown. The high-frequency module 1 can be mounted using any of a variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1 should not be interpreted restrictively.

[0167] Similar to Embodiment 1, when viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11 and the filter 31. Furthermore, in this modified example, when viewed from above the module substrate 90, the matching circuit 46 is also disposed between the power amplifier 11 and the filter 31.

[0168] [1.9 Summary]

[0169] As described above, the high-frequency module 1 involved in this variation may also include a matching circuit 46, which is connected between the power amplifier 11 and the filter 31. When viewed from above the module substrate 90, the matching circuit 46 is positioned between the power amplifier 11 and the filter 31.

[0170] Therefore, the heat propagation from the power amplifier 11 to the filter 31 is reduced not only by the filter 32 but also by the matching circuit 46. Consequently, the temperature rise of the filter 31 caused by the heat generated in the power amplifier 11, thus suppressing the degradation of the filter 31's characteristics, can be further suppressed.

[0171] (Implementation Method 2)

[0172] Next, Embodiment 2 will be described. The main difference between this embodiment and Embodiment 1 is that the high-frequency module includes a filter for receiving frequency band B instead of a filter for receiving frequency band A. Hereinafter, the high-frequency module 1A according to this embodiment will be described with reference to the accompanying drawings.

[0173] Furthermore, the communication device 5A according to this embodiment is the same as the communication device 5, except that it has a high-frequency module 1A instead of the high-frequency module 1. Therefore, the description of the circuit structure of the communication device 5A is omitted, and will refer to... Figure 8 The circuit structure of the high-frequency module 1A is described. Figure 8 This is a circuit diagram of the communication device 5A involved in this embodiment.

[0174] also, Figure 8 This is an illustrative circuit structure; the communication device 5A and the high-frequency module 1A can be installed using any of a variety of circuit mounting methods and circuit techniques. Therefore, the following description of the high-frequency module 1A should not be interpreted restrictively.

[0175] [2.1 Circuit Structure of High-Frequency Module 1A]

[0176] The high-frequency module 1A includes a power amplifier 11, a low-noise amplifier 21, filters 31, 32, 33, 34, 35 and 37, matching circuits 41, 42, 43, 44, 45 and 46, switching circuits 50 and 51, an antenna connection terminal 100, a high-frequency input terminal 111 and a high-frequency output terminal 121.

[0177] Filter 37 is an example of a seventh filter, having a passband that includes the receive frequency band B. Filter 37 is connected between antenna connection terminal 100 and low-noise amplifier 21. Specifically, one end of filter 37 is switchably connected to antenna connection terminal 100 via matching circuit 42 and switching circuit 50. On the other hand, the other end of filter 37 is connected to low-noise amplifier 21.

[0178] [2.2 Installation Example of High Frequency Module 1A]

[0179] Next, refer to Figure 9 An example of installing a high-frequency module 1A with the circuit structure described above will be explained. Figure 9 This is a top view of the high-frequency module 1A involved in this embodiment.

[0180] exist Figure 9 In order to easily understand the configuration relationship of each component, sometimes each component is labeled with a label indicating that component (e.g., "PA"), but it is also possible not to label the actual components. Additionally, in... Figure 9 The illustrations of resin components 91 and 92 covering multiple circuit components and metal shielding 93 covering resin components 91 and 92 are omitted.

[0181] also, Figure 9 An example installation of the high-frequency module 1A is shown. The high-frequency module 1A can be installed using any of a variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1A should not be interpreted limitingly.

[0182] In addition to having Figure 8 In addition to the multiple circuit components shown, it also includes a module substrate 90, resin components 91 and 92, a metal shield 93, and multiple external connection terminals 94.

[0183] Filter 37 (B-Rx) is disposed on the main surface 90a of module substrate 90. Similar to filter 36 in Embodiment 1, filter 37 is disposed between power amplifier 11 and filter 31 when viewed from above the module substrate 90. Furthermore, like filters 31-36, filter 37 can be mounted as a SAW filter, BAW filter, LC resonant filter, or dielectric resonant filter, or any combination thereof. However, filter 37 is not limited to these types of filters.

[0184] Furthermore, the installation of the high-frequency module 1A is not limited to... Figure 9 For example, the high-frequency module 1A may not be mounted on both sides of the module substrate 90, but on only one side of the module substrate 90.

[0185] [2.3 Summary]

[0186] As described above, in the high-frequency module 1A of this embodiment, the passband of the filter 32 may include the transmission band of the second FDD band. The high-frequency module 1A also includes: a low-noise amplifier 21 disposed on the module substrate 90; and a filter 37 disposed on the module substrate 90, having a passband that includes the reception band of the second FDD band. The filter 37 is connected to the low-noise amplifier 21. When viewed from above the module substrate 90, the filter 37 is disposed between the power amplifier 11 and the filter 31.

[0187] Therefore, heat propagation from power amplifier 11 to filter 31 is reduced not only by filter 32 but also by filter 37. Consequently, it is possible to further suppress the degradation of filter 31's characteristics due to the temperature rise caused by the heat generated in power amplifier 11.

[0188] (Implementation Method 3)

[0189] Next, Embodiment 3 will be described. The main difference between this embodiment and Embodiment 1 is that the high-frequency module includes two power amplifiers. Hereinafter, the high-frequency module 1B according to this embodiment will be described with reference to the accompanying drawings.

[0190] Furthermore, the communication device 5B according to this embodiment is the same as the communication device 5, except that it has a high-frequency module 1B instead of the high-frequency module 1. Therefore, the description of the circuit structure of the communication device 5B is omitted, and will refer to... Figure 10 The circuit structure of high-frequency module 1B is described. Figure 10 This is a circuit diagram of the communication device 5B involved in this embodiment.

[0191] also, Figure 10 This is an illustrative circuit structure; the communication device 5B and the high-frequency module 1B can be installed using any of a variety of circuit mounting methods and circuit techniques. Therefore, the following description of the high-frequency module 1B should not be interpreted restrictively.

[0192] [3.1 Circuit structure of high-frequency module 1B]

[0193] The high-frequency module 1B includes power amplifiers 11B and 12B, a low-noise amplifier 21, filters 31, 32, 33, 34, 35 and 36, matching circuits 41, 42, 43, 44, 45, 46B and 47B, switching circuits 50, 52 and 53, an antenna connection terminal 100, high-frequency input terminals 111 and 112, and a high-frequency output terminal 121.

[0194] High-frequency input terminals 111 and 112 are external connection terminals of the high-frequency module 1B. High-frequency input terminals 111 and 112 are externally connected to the RFIC 3 of the high-frequency module 1B, and internally connected to power amplifiers 11B and 12B, respectively. Thus, the high-frequency module 1B can provide the transmit signals from the RFIC 3 via high-frequency input terminals 111 and 112 to the power amplifiers 11B and 12B, respectively.

[0195] Power amplifier 11B, an example of a first power amplifier, is connected between the high-frequency input terminal 111 and filters 31, 33, and 34. Specifically, the input terminal of power amplifier 11B is connected to the high-frequency input terminal 111. On the other hand, the output terminal of power amplifier 11B is connected to filters 31, 33, and 34 in a switchable manner via matching circuit 46B and switching circuit 52. Power amplifier 11B can amplify the transmitted signal provided from RFIC 3 via high-frequency input terminal 111 using power supplied from a power source (not shown).

[0196] Furthermore, some or all of the power amplifier 11B may not be included in the high-frequency module 1. In this case, some or all of the power amplifier 11B may be connected between the RFIC 3 and the high-frequency input terminal 111, or it may be included in the RFIC 3.

[0197] Power amplifier 12B, an example of a second power amplifier, is connected between the high-frequency input terminal 112 and filters 32 and 35. Specifically, the input terminal of power amplifier 12B is connected to the high-frequency input terminal 112. On the other hand, the output terminal of power amplifier 12B is connected to filters 32 and 35 in a switchable manner via matching circuit 47B and switching circuit 53. Power amplifier 12B can amplify the transmitted signal provided from RFIC 3 via high-frequency input terminal 112 using power supplied from a power source (not shown).

[0198] Furthermore, some or all of the power amplifier 12B may not be included in the high-frequency module 1. In this case, some or all of the power amplifier 12B may be connected between RFIC 3 and the high-frequency input terminal 112, or may be included in RFIC 3.

[0199] A matching circuit (matching network) 46B is connected between the switching circuit 52 and the power amplifier 11B to achieve impedance matching between them. The matching circuit 46B may include, for example, a parallel inductor and / or a parallel capacitor, or a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 46B are not limited to inductors and / or capacitors. Additionally, the matching circuit 46B may not be included in the high-frequency module 1B.

[0200] A matching circuit (matching network) 47B is connected between the switching circuit 53 and the power amplifier 12B to achieve impedance matching between them. The matching circuit 47B may include, for example, a parallel inductor and / or a parallel capacitor, or a series inductor and / or a series capacitor. Furthermore, the matching elements included in the matching circuit 47B are not limited to inductors and / or capacitors. Additionally, the matching circuit 47B may not be included in the high-frequency module 1B.

[0201] Switching circuit 52, an example of a second switching circuit, is connected between filters 31, 33, and 34 and power amplifier 11B. Specifically, switching circuit 52 includes a common terminal 520 and selection terminals 521, 522, and 523. Common terminal 520, an example of a second common terminal, is connected to power amplifier 11B via matching circuit 46B. Selection terminal 521, an example of a sixth selection terminal, is connected to filter 31. Selection terminal 522, an example of a seventh selection terminal, is connected to filter 33. Selection terminal 523, an example of an eighth selection terminal, is connected to filter 34.

[0202] In such a connection structure, the switching circuit 52 can, for example, connect the common terminal 520 exclusively to the selection terminals 521, 522, and 523 based on digital control signals from the RFIC 3. That is, in the switching circuit 52, the common terminal 520 is selectively connected to the selection terminals 521 to 523. The switching circuit 52 is, for example, constructed using an SP3T type switching circuit. Furthermore, the switching circuit 52 may not be included in the high-frequency module 1B.

[0203] Switching circuit 53, an example of a third switching circuit, is connected between filters 32 and 35 and power amplifier 12B. Specifically, switching circuit 53 includes a common terminal 530 and selection terminals 531 and 532. Common terminal 530, an example of a third common terminal, is connected to power amplifier 12B via matching circuit 47B. Selection terminal 531, an example of a ninth selection terminal, is connected to filter 32. Selection terminal 532, an example of a tenth selection terminal, is connected to filter 35.

[0204] In such a connection structure, the switching circuit 53 can, for example, connect the common terminal 530 exclusively to the selection terminals 531 and 532 based on a digital control signal from the RFIC 3. That is, in the switching circuit 53, the common terminal 530 is selectively connected to the selection terminals 531 and 532. The switching circuit 53 is, for example, constructed from an SPDT-type switching circuit. Furthermore, the switching circuit 53 may not be included in the high-frequency module 1B.

[0205] [3.2 Installation Example of High Frequency Module 1B]

[0206] Next, refer to Figure 11 and Figure 12 An example of installing a high-frequency module 1B with the circuit structure described above will be explained. Figure 11 This is a top view of the high-frequency module 1B involved in this embodiment. Figure 12 This is a top view of the high-frequency module 1B according to this embodiment, which is a view of the main surface 90b of the module substrate 90 from the z-axis positive side.

[0207] exist Figure 11 and Figure 12 In order to easily understand the configuration relationship of each component, sometimes each component is labeled with a label indicating that component (e.g., "PA"), but it is also possible not to label the actual components. Additionally, in... Figure 11 and Figure 12 The illustrations of resin components 91 and 92 covering multiple circuit components and metal shielding 93 covering resin components 91 and 92 are omitted.

[0208] also, Figure 11 and Figure 12 An example installation of the high-frequency module 1B is shown. The high-frequency module 1B can be installed using any of a variety of circuit mounting and circuit technologies. Therefore, the following description of the high-frequency module 1B should not be interpreted limitingly.

[0209] Power amplifiers 11B and 12B (PA) are disposed on the main surface 90a of the module substrate 90. Similar to the power amplifier 11 according to Embodiment 1, power amplifiers 11B and 12B can each be constructed, for example, from an HBT, HEMT, MESFET, or any combination thereof.

[0210] Matching circuits 46B and 47B (MN(PA)) are disposed on the main surface 90a of the module substrate 90, positioned between power amplifiers 11B and 12B when the module substrate 90 is viewed from above. Matching circuits 46B and 47B are, for example, mounted as chip inductors and / or chip capacitors. However, matching circuits 46B and 47B are not limited to chip inductors and / or chip capacitors. For example, part or all of matching circuits 46B and 47B can also be mounted via wiring patterns formed on the module substrate 90.

[0211] When viewed from above the module substrate 90, filters 32 and 35 are positioned between the power amplifier 11B and filters 31, 33, 34 and 36.

[0212] An integrated circuit 20B (IC) is disposed on the main surface 90b of the module substrate 90, and includes a low-noise amplifier 21 and switching circuits 50, 52, and 53. The integrated circuit 20B can be manufactured using semiconductor materials. Examples of semiconductor materials include single-crystal silicon, gallium nitride (GaN), or silicon carbide (SiC). Furthermore, the low-noise amplifier 21 and the switching circuits 50, 52, and 53 can also be included in multiple integrated circuits.

[0213] [3.3 Summary]

[0214] As described above, the high-frequency module 1B in this embodiment may also include a power amplifier 12B disposed on the module substrate 90 and connected to the filter 32.

[0215] Therefore, in the high-frequency module 1B, which can amplify the transmitted signal of the first FDD band and the transmitted signal of the second FDD band, the first TDD band, or the second TDD band using power amplifiers 11B and 12B respectively, heat propagation from power amplifier 11B to filter 31 can be reduced by the filter 32 disposed between power amplifier 11B and filter 31. Thus, the temperature rise of filter 31 due to heat generated in power amplifier 11B, thereby suppressing the degradation of filter 31's characteristics.

[0216] Alternatively, for example, the high-frequency module 1B according to this embodiment may also include: a filter 33 disposed on the module substrate 90, having a passband including a transmission band that supports a third FDD frequency band of a first power level; and a switching circuit 52 disposed on the module substrate 90, including a common terminal 520 connected to the output terminal of the power amplifier 11B, a selection terminal 521 connected to the filter 31, and a selection terminal 522 connected to the filter 33. When viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11B and the filter 33.

[0217] Therefore, heat propagation from power amplifier 11B to filter 33 is also reduced by filter 32 disposed between power amplifier 11B and filter 33. Thus, it is possible to suppress the degradation of filter 33's characteristics due to temperature rise caused by heat generated in power amplifier 11B.

[0218] Alternatively, for example, the high-frequency module 1B involved in this embodiment may also include a filter 34, which is disposed on the module substrate 90 and has a passband that includes a transmission band that supports a fourth FDD band of the first power level. The switching circuit 52 also includes a selection terminal 523 connected to the filter 34. When viewed from above the module substrate 90, the filter 32 is disposed between the power amplifier 11B and the filter 34.

[0219] Therefore, heat propagation from power amplifier 11B to filter 34 is also reduced by filter 32 disposed between power amplifier 11B and filter 34. Thus, it is possible to suppress the degradation of filter 34's characteristics due to the temperature rise caused by heat generated in power amplifier 11B.

[0220] Alternatively, for example, the high-frequency module 1B according to this embodiment may also include: a filter 35 disposed on the module substrate 90, having a transmit band including a fifth FDD band supporting a second power level, a third TDD band supporting a first power level, or a fourth TDD band supporting a second power level; and a switching circuit 53 disposed on the module substrate 90, including a common terminal 530 connected to the output terminal of the power amplifier 12B, a selection terminal 531 connected to the filter 32, and a selection terminal 532 connected to the filter 35. When viewed from above the module substrate 90, the filter 35 is disposed between the power amplifier 11B and the filter 31.

[0221] Therefore, heat propagation from power amplifier 11B to filter 31 is reduced not only by filter 32 but also by filter 35. Consequently, it is possible to further suppress the temperature rise of filter 31 caused by heat generated in power amplifier 11B, thereby suppressing the degradation of filter 31's characteristics.

[0222] (A variation of implementation method 3)

[0223] Next, a variation of Embodiment 3 will be described. The main difference between this variation and Embodiment 3 is the arrangement of filters 31-33 and 35 and power amplifier 12B on the main surface 90a of the module substrate 90. Hereinafter, this variation will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 3. Furthermore, the circuit structures of the communication device 5B and high-frequency module 1B involved in this variation are the same as those of the communication device 5B and high-frequency module 1B involved in Embodiment 3, therefore, the illustrations and their descriptions are omitted.

[0224] [3.4 Installation Example of High Frequency Module 1B]

[0225] Reference Figure 13 An installation example of the high-frequency module 1B involved in this variation will be described. Figure 13 This is a top view of the high-frequency module 1B involved in this variation. Figure 13 In order to make it easier to understand the configuration relationship of each component, sometimes each component is labeled with a label indicating that component (such as "PA" etc.), but it is also possible not to label the actual components.

[0226] In addition, Figure 13The illustrations of resin components 91 and 92 covering multiple circuit parts and the metal shielding 93 covering resin components 91 and 92 are omitted. Furthermore, in... Figure 13 The diagrams of filters 34 and 36 and matching circuit 44 are also omitted.

[0227] also, Figure 13 An example installation of the high-frequency module 1B is shown. The high-frequency module 1B can be installed using any of a variety of circuit mounting and circuit technologies. Therefore, the following description of the high-frequency module 1B should not be interpreted limitingly.

[0228] Similar to Embodiment 3, when viewed from above the module substrate 90, filter 32 is disposed between power amplifier 11B and filters 31 and 33. Furthermore, when viewed from above the module substrate 90, filter 31 is disposed between power amplifier 12B and filters 32 and 35.

[0229] [3.5 Summary]

[0230] As described above, in the high-frequency module 1B involved in this variation, the filter 31 may be disposed between the power amplifier 12B and the filter 32 when viewed from above the module substrate 90.

[0231] Therefore, heat propagation from power amplifier 12B to filter 32 is also reduced by filter 31 disposed between power amplifier 12B and filter 32. Thus, it is possible to suppress the degradation of filter 32's characteristics due to the temperature rise caused by heat generated in power amplifier 12B.

[0232] (Other implementation methods)

[0233] The high-frequency module of the present invention has been described above based on the embodiments, but the high-frequency module of the present invention is not limited to the above embodiments. Other embodiments implemented by combining any of the constituent elements in the above embodiments, variations of the above embodiments that can be conceived by those skilled in the art by implementing various modifications to the above embodiments without departing from the spirit of the present invention, and various devices that incorporate the above high-frequency module are also included in the present invention.

[0234] For example, in the circuit structures of the various circuits involved in the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, a matching circuit and / or a switching circuit may be inserted between the low-noise amplifier 21 and the filter 36.

[0235] Industrial availability

[0236] As a high-frequency module or communication device configured at the front end, the present invention can be widely used in communication devices such as portable telephones.

[0237] Explanation of reference numerals in the attached figures

[0238] 1. 1A, 1B: High-frequency modules;

[0239] 2: Antenna;

[0240] 3: RFIC;

[0241] 4: BBIC;

[0242] 5, 5A, 5B: Communication devices;

[0243] 11, 11B, 12B: Power amplifiers;

[0244] 20, 20B: Integrated circuits;

[0245] 21: Low-noise amplifier;

[0246] 31, 32, 33, 34, 35, 36, 37: Filters;

[0247] 41, 42, 43, 44, 45, 46, 46B, 47B: Matching circuit;

[0248] 50, 51, 52, 53: Switching circuits;

[0249] 61, 62: Metal components;

[0250] 90: Module baseboard;

[0251] 90a, 90b: Main face;

[0252] 91, 92: Resin components;

[0253] 93: Metal shielding components;

[0254] 94: External connection terminal;

[0255] 100: Antenna connection terminal;

[0256] 111, 112: High-frequency input terminals;

[0257] 121: High-frequency output terminal;

[0258] 301: Piezoelectric layer;

[0259] 302: Low-sound-velocity layer;

[0260] 303: Hypersonic layer;

[0261] 304: Support base plate;

[0262] 305: IDT electrode;

[0263] 312: Low acoustic impedance layer;

[0264] 313: High acoustic impedance layer;

[0265] 322: Intermediate layer;

[0266] 500, 510, 520, 530: Common terminals;

[0267] 501, 502, 503, 504, 505, 511, 512, 513, 514, 515, 521, 522, 523, 531, 532: Select terminals;

[0268] A, B, C, D, E: Frequency bands.

Claims

1. A high-frequency module, comprising: Module baseboard; A first power amplifier is disposed on the module substrate; A first filter, disposed on the module substrate, has a passband including a transmit band of a first frequency division duplex band (FDD) supporting a first power level; the first filter is connected to the first power amplifier; and A second filter, disposed on the module substrate, has a transmit band including a second FDD band supporting a second power level, a first time-division duplex band (i.e., a first TDD band) supporting the first power level, or a passband including a second TDD band supporting the second power level, wherein the second power level is defined by a maximum output power lower than the first power level. in, When viewed from above the module substrate, the second filter is positioned between the first power amplifier and the first filter.

2. The high-frequency module according to claim 1, wherein, The high-frequency module also includes a first switching circuit, which is disposed on the module substrate and includes a first common terminal connected to the output terminal of the first power amplifier, a first selection terminal connected to the first filter, and a second selection terminal connected to the second filter.

3. The high-frequency module according to claim 2, wherein, The high-frequency module also includes a third filter, which is disposed on the module substrate and has a passband that includes a transmission frequency band supporting the first power level in a third FDD band. The first switching circuit also includes a third selection terminal connected to the third filter. When viewed from above the module substrate, the second filter is positioned between the first power amplifier and the third filter.

4. The high-frequency module according to claim 2 or 3, wherein, The high-frequency module further includes a fourth filter, which is disposed on the module substrate and has a passband that includes a transmission frequency band supporting the first power level's fourth FDD frequency band. The first switching circuit also includes a fourth selection terminal connected to the fourth filter. When viewed from above the module substrate, the second filter is positioned between the first power amplifier and the fourth filter.

5. The high-frequency module according to any one of claims 2 to 4, wherein, The high-frequency module further includes a fifth filter, which is disposed on the module substrate and has a passband including a transmit band supporting a fifth FDD band of the second power level, a third TDD band supporting the first power level, or a fourth TDD band supporting the second power level. The first switching circuit also includes a fifth selection terminal connected to the fifth filter. When viewed from above the module substrate, the fifth filter is positioned between the first power amplifier and the first filter.

6. The high-frequency module according to any one of claims 1 to 5, wherein, The high-frequency module also features: A low-noise amplifier, disposed on the module substrate; and A sixth filter, disposed on the module substrate, has a passband that includes the receiving frequency band of the first FDD band, and is connected to the low-noise amplifier. When viewed from above the module substrate, the second filter is positioned between the first power amplifier and the sixth filter.

7. The high-frequency module according to claim 6, wherein, When viewed from above the module substrate, the sixth filter is positioned between the first power amplifier and the first filter.

8. The high-frequency module according to claim 6 or 7, wherein, When viewed from above, the first filter is closer to the outer edge of the module substrate than the sixth filter.

9. The high-frequency module according to claim 6, wherein, When viewed from above the module substrate, the first filter is positioned between the first power amplifier and the sixth filter.

10. The high-frequency module according to any one of claims 1 to 9, wherein, The passband of the second filter includes the transmit band of the second FDD band. The high-frequency module also features: A low-noise amplifier, disposed on the module substrate; and A seventh filter, disposed on the module substrate, has a passband that includes the receiving frequency band of the second FDD band, and is connected to the low-noise amplifier. When viewed from above the module substrate, the seventh filter is positioned between the first power amplifier and the first filter.

11. The high-frequency module according to any one of claims 1 to 10, wherein, The high-frequency module also includes a matching circuit, which is connected between the first power amplifier and the first filter. When viewed from above the module substrate, the matching circuit is positioned between the first power amplifier and the first filter.

12. The high-frequency module according to any one of claims 1 to 11, wherein, The high-frequency module also includes a metal component, which is positioned between the first power amplifier and the first filter when viewed from above the module substrate.

13. The high-frequency module according to claim 1, wherein, The high-frequency module also includes a second power amplifier configured on the module substrate and connected to the second filter.

14. The high-frequency module according to claim 13, wherein, The high-frequency module also features: A third filter, disposed on the module substrate, has a passband including a transmit band supporting a third FDD frequency band of the first power level; and A second switching circuit, disposed on the module substrate, includes a second common terminal connected to the output terminal of the first power amplifier, a sixth selection terminal connected to the first filter, and a seventh selection terminal connected to the third filter. When viewed from above the module substrate, the second filter is positioned between the first power amplifier and the third filter.

15. The high-frequency module according to claim 14, wherein, The high-frequency module further includes a fourth filter, which is disposed on the module substrate and has a passband that includes a transmission frequency band supporting the first power level's fourth FDD frequency band. The second switching circuit also includes an eighth selection terminal connected to the fourth filter. When viewed from above the module substrate, the second filter is positioned between the first power amplifier and the fourth filter.

16. The high-frequency module according to any one of claims 13 to 15, wherein, The high-frequency module also features: The fifth filter, disposed on the module substrate, has a transmit band including a fifth FDD band supporting the second power level, a third TDD band supporting the first power level, or a passband supporting a fourth TDD band supporting the second power level. as well as A third switching circuit, disposed on the module substrate, includes a third common terminal connected to the output terminal of the second power amplifier, a ninth selection terminal connected to the second filter, and a tenth selection terminal connected to the fifth filter. When viewed from above the module substrate, the fifth filter is positioned between the first power amplifier and the first filter.

17. The high-frequency module according to any one of claims 13 to 16, wherein, When viewed from above, the first filter is positioned between the second power amplifier and the second filter.

18. The high-frequency module according to any one of claims 1 to 17, wherein, The module substrate has a first main surface and a second main surface facing each other. The first power amplifier, the first filter, and the second filter are disposed on the first main surface. The high-frequency module also features: Multiple external connection terminals are configured on the second main surface; A resin component disposed on the first main surface, covering at least a portion of the first power amplifier, the first filter, and the second filter; as well as A metal shielding element that covers at least a portion of the surface of the resin component. At least a portion of the second filter is in contact with the metal shield.

19. The high-frequency module according to any one of claims 1 to 18, wherein, The first filter is a surface acoustic wave filter comprising a piezoelectric layer and a supporting substrate. The support substrate is made of a semiconductor material or an insulating material with a band gap larger than that of silicon.

20. The high-frequency module according to any one of claims 1 to 18, wherein, The first filter is a surface acoustic wave filter comprising a piezoelectric layer and a supporting substrate. The support substrate is made of silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), diamond, aluminum nitride (AlN), sapphire, spinel (MgAl2O4), and yttrium aluminum garnet (Y3Al5O4). 12 It is composed of at least one of quartz, mullite (i.e., 3Al2O32SiO2 or 2Al2O3SiO2), and silon (i.e., SiAlON).

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