Method of processing semiconductor surface stress release

Abstract

The method for releasing stress of semiconductor surface comprises: growing an aluminum nitride buffer layer on the semiconductor surface; growing a first aluminum nitride layer on the aluminum nitride buffer layer; and growing a second aluminum nitride layer on the first aluminum nitride layer. The method effectively releases stress generated in the process of manufacturing semiconductor components and devices, while ensuring the optical and electrical properties of the devices.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to a method for relieving stress on the surface of a semiconductor. Background Technology

[0002] In the semiconductor device manufacturing process, the accumulation of surface energy can lead to problems such as electrical signal interference, device overheating, and voltage imbalance, thereby affecting the device's performance and reliability. Traditional stress relief methods (such as mechanical methods, high-temperature methods, magnetic methods, and laser annealing methods) have problems such as high cost, risks associated with thermal annealing, poor practicality, or long-term aging.

[0003] Therefore, there is an urgent need for a method to relieve semiconductor surface stress that is efficient, low-cost, and has no negative impact on device performance. Summary of the Invention

[0004] The purpose of this invention is to provide an improved method for releasing stress on semiconductor surfaces. By optimizing the thin film growth process, the stress generated during the manufacturing process of semiconductor devices can be effectively released, while ensuring the optical and electrical performance of the devices.

[0005] To achieve the above objectives, the present invention provides a method for relieving stress on the semiconductor surface, comprising the following steps:

[0006] An aluminum nitride buffer layer is grown on the semiconductor surface;

[0007] A first aluminum nitride layer is grown on the aluminum nitride buffer layer; and

[0008] A second aluminum nitride layer is grown on the first aluminum nitride layer.

[0009] Compared with existing technologies, this invention sequentially grows an aluminum nitride buffer layer, a first aluminum nitride layer, and a second aluminum nitride layer on the semiconductor surface. This multi-stage aluminum nitride film growth process effectively releases stress generated during semiconductor device manufacturing, improving device stability and reliability. Furthermore, the aluminum nitride film possesses high mechanical strength and excellent optical properties, with no negative impact on the optical and electrical performance of the device. Moreover, the processing method of this invention is simple, low-cost, and suitable for large-scale production, making it widely applicable in semiconductor manufacturing, optoelectronic device manufacturing, and electronic device manufacturing, with broad market prospects.

[0010] Preferably, the processing method is carried out in a metal-organic chemical vapor deposition apparatus.

[0011] Preferably, the growth of the aluminum nitride buffer layer includes: controlling the reaction chamber temperature to 400-500°C and the pressure to 150-180 mbar, and supplying the reaction chamber with trimethylaluminum and ammonia.

[0012] Preferably, the growth of the first aluminum nitride layer includes: controlling the reaction chamber temperature to 550-650°C and the pressure to 30-60 mbar, and supplying trimethylaluminum and ammonia gas to the reaction chamber.

[0013] Preferably, the growth of the second aluminum nitride layer includes: controlling the reaction chamber temperature to 700-800°C and the pressure to 40-80 mbar, and supplying trimethylaluminum and ammonia gas to the reaction chamber.

[0014] Preferably, the thickness of the aluminum nitride buffer layer is 20-30 nm.

[0015] Preferably, the thickness of the first aluminum nitride layer is 35-50 nm.

[0016] Preferably, the thickness of the second aluminum nitride layer is 1000-2000 nm. Detailed Implementation

[0017] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific implementation methods of this application are described in detail below with reference to some embodiments. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0018] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0019] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0020] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0021] The method for releasing semiconductor surface stress according to the present invention will be further described below with reference to embodiments, but this does not limit the present invention. The method of the present invention aims to provide an improved method for releasing semiconductor surface stress, which effectively releases the stress generated during the manufacturing process of semiconductor devices by optimizing the thin film growth process, while ensuring the optical and electrical performance of the devices.

[0022] In one embodiment of the semiconductor surface stress relief method of the present invention, the following steps are included:

[0023] An aluminum nitride buffer layer is grown on the semiconductor surface;

[0024] A first aluminum nitride layer is grown on the aluminum nitride buffer layer; and

[0025] A second aluminum nitride layer is grown on the first aluminum nitride layer.

[0026] This invention sequentially grows an aluminum nitride buffer layer, a first aluminum nitride layer, and a second aluminum nitride layer on a semiconductor surface. By employing a multi-stage aluminum nitride thin film growth process, stress generated during semiconductor device manufacturing is effectively released, improving device stability and reliability. Furthermore, the aluminum nitride thin film possesses high mechanical strength and excellent optical properties, without negatively impacting the optical and electrical performance of the device. Moreover, the processing method of this invention is simple, low-cost, and suitable for large-scale production, making it widely applicable in semiconductor manufacturing, optoelectronic device manufacturing, and electronic device manufacturing, with broad market prospects.

[0027] Specifically, in a preferred embodiment, semiconductor components, such as silicon-based semiconductor components, are first prepared. The surface of the semiconductor components is cleaned to remove impurities and oxide layers to facilitate subsequent growth processes.

[0028] Aluminum nitride buffer layer was prepared. A silicon-based semiconductor device was placed in a metal-organic chemical vapor deposition (MOCVD) apparatus, and the reaction chamber temperature was controlled at 400-500℃ and the pressure at 150-180 mbar. Trimethylaluminum and ammonia gas were then supplied to the reaction chamber, for example, 80 ml of trimethylaluminum and 10000 ml of ammonia gas were introduced. Under these conditions, an aluminum nitride buffer layer was grown on the surface of the semiconductor device for 15-20 minutes, yielding an aluminum nitride buffer layer with a thickness of 20-30 nm.

[0029] Prepare the first aluminum nitride layer. Adjust the reaction chamber temperature to 550-650℃ and the pressure to 30-60 mbar. Provide the reaction chamber with 200 ml of trimethylaluminum and 5000 ml of ammonia gas. Under these conditions, grow the first aluminum nitride layer on the aluminum nitride buffer layer for 15-20 minutes to obtain a first aluminum nitride layer with a thickness of 35-50 nm.

[0030] To prepare the second aluminum nitride layer, the reaction chamber temperature was adjusted to 700-800℃ and the pressure to 40-80 mbar. 500 ml of trimethylaluminum and 75000 ml of ammonia gas were supplied to the reaction chamber. The growth rate was controlled at 1.5-2.0 μm / h, and the growth time was 60-90 minutes under these conditions to obtain a second aluminum nitride layer with a thickness of 1000-2000 nm.

[0031] After the above treatment, the stress on the semiconductor surface was measured using a stress tester, revealing a significant reduction in surface stress and stable device performance. Optical and electrical performance tests confirmed that the aluminum nitride film had no negative impact on device performance, improved photoelectric conversion efficiency, and significantly enhanced long-term operational stability.

[0032] In summary, this invention, through a multi-stage aluminum nitride thin film growth process, effectively releases the stress generated during semiconductor device manufacturing, thereby improving the stability and reliability of the devices. Furthermore, the aluminum nitride thin film possesses high mechanical strength and excellent optical properties, without negatively impacting the optical and electrical performance of the devices. Moreover, the processing method of this invention is simple, low-cost, and suitable for large-scale production, making it widely applicable in semiconductor manufacturing, optoelectronic device manufacturing, and electronic device manufacturing, with broad market prospects.

[0033] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. A method for relieving stress on a semiconductor surface, characterized in that, Includes the following steps: An aluminum nitride buffer layer is grown on the semiconductor surface; A first aluminum nitride layer is grown on the aluminum nitride buffer layer; as well as A second aluminum nitride layer is grown on the first aluminum nitride layer.

2. The method for relieving semiconductor surface stress as described in claim 1, characterized in that, The processing method is carried out in a metal-organic chemical vapor deposition apparatus.

3. The method for relieving semiconductor surface stress as described in claim 1, characterized in that, The growth of the aluminum nitride buffer layer includes: controlling the reaction chamber temperature to 400-500℃ and the pressure to 150-180mbar, and supplying trimethylaluminum and ammonia to the reaction chamber.

4. The method for relieving semiconductor surface stress as described in claim 1, characterized in that, The growth of the first aluminum nitride layer includes: controlling the reaction chamber temperature to 550-650°C and the pressure to 30-60 mbar, and supplying trimethylaluminum and ammonia gas to the reaction chamber.

5. The method for relieving semiconductor surface stress as described in claim 1, characterized in that: The growth of the second aluminum nitride layer includes: controlling the reaction chamber temperature to 700-800°C and the pressure to 40-80 mbar, and supplying trimethylaluminum and ammonia gas to the reaction chamber.

6. The method for relieving semiconductor surface stress as described in claim 1, characterized in that: The thickness of the aluminum nitride buffer layer is 20-30 nm.

7. The method for relieving semiconductor surface stress as described in claim 1, characterized in that: The thickness of the first aluminum nitride layer is 35-50 nm.

8. The method for relieving semiconductor surface stress as described in claim 1, characterized in that: The thickness of the second aluminum nitride layer is 1000-2000 nm.