A vertically electrostatically driven voltage sensitive element and method of manufacture

Abstract

The application discloses a vertically electrostatically driven voltage sensitive element and a preparation method thereof. The method comprises the following steps: composing the voltage sensitive element by a bottom plate module, an electrostatic driving module, an induction measurement module and a supporting module, and arranging the electrostatic driving module, the induction measurement module and the supporting module on the bottom plate module; symmetrically arranging the electrostatic driving module on both sides of the induction measurement module, vertically vibrating the electrostatic driving module according to the electrostatic force, driving the induction measurement module by the electrostatic driving module, and vertically vibrating the induction measurement module to measure the current electric field of the voltage sensitive element; and connecting the supporting module with the induction measurement module to support the induction measurement module to vertically vibrate. The application can improve the measurement sensitivity. The application can be widely applied in the technical field of sensors.

Description

Technical Field

[0001] This application relates to the field of sensor technology, and in particular to a vertically electrostatically driven voltage-sensitive element and its fabrication method. Background Technology

[0002] Electric field is one of the physical parameters in a power system. Monitoring voltage in a power system provides important support for improving the operational stability of the power system. Existing voltage monitoring can use traditional voltage transformers for voltage measurement, but traditional voltage transformers are too large and costly, making them unsuitable for wide-area voltage deployment and measurement. Current technologies usually use non-invasive voltage measurement, which involves establishing a field-source model to retrieve the measured voltage; however, existing technologies have low measurement sensitivity. Summary of the Invention

[0003] The main objective of this application is to propose a vertically electrostatically driven voltage-sensitive element and its fabrication method, which can improve measurement sensitivity.

[0004] To achieve the above objectives, one aspect of this application provides a vertically electrostatically driven voltage-sensitive element, which includes a base plate module, an electrostatic driving module, a sensing and measurement module, and a support module; wherein: The electrostatic drive module is mounted on the base plate module and is connected to the sensing and measurement module; wherein, the electrostatic drive module is symmetrically arranged on both sides of the sensing and measurement module, and the electrostatic drive module is used to perform vertical vibration based on electrostatic force; The sensing measurement module is mounted on the base plate module, and its two ends are connected to the support module. The sensing measurement module is used to measure the current electric field based on the vertical vibration of the electrostatic drive module. The support module is mounted on the base plate module and is connected to the sensing and measurement module; wherein, the support module is used to support the sensing and measurement module to perform vertical vibration.

[0005] In some embodiments, the base plate module includes a substrate layer, a device layer, and an insulating layer; wherein, The insulating layer is disposed between the device layer and the substrate layer; the device layer is connected to the electrostatic drive module, the inductive measurement module and the support module respectively.

[0006] In some embodiments, the base plate module further includes a groove disposed in the coverage area of ​​the electrostatic drive module, the induction measurement module and the support module, and the bottom of the groove is a substrate layer.

[0007] In some embodiments, the electrostatic drive module includes a plurality of electrostatic drive electrode groups, which are symmetrically arranged on both sides of the induction measurement module. Each electrostatic drive electrode group includes a fixed drive electrode, a movable drive electrode, and a strain material. The fixed driving electrode includes a first root connecting block and a first fixed comb array, the first fixed comb array being disposed on the side of the first root connecting block; the first end of the first root connecting block is fixedly connected to the device layer in the base plate module, and the second end of the first root connecting block is suspended. The movable drive electrode includes a second root connecting block and a second fixed comb tooth array. The second fixed comb tooth array is disposed on the side of the second root connecting block. The first end of the second root connecting block is fixedly connected to the sensing and measuring module, and the second end of the second root connecting block is suspended. The second fixed comb tooth array is arranged intersecting with the first fixed comb tooth array. The strain material is disposed on the upper surface of the first root connecting block, or the strain material is disposed on the upper surface of the second root connecting block; wherein the strain material is used to cause the first root connecting block or the second root connecting block to undergo stress warping.

[0008] In some embodiments, the sensing measurement module includes two sensing electrodes and a shielding electrode, the sensing electrodes being symmetrically arranged on both sides of the shielding electrode; wherein, The sensing electrode includes a third root connecting block and a third fixed comb tooth array. The third fixed comb tooth array is disposed at the first end of the third root connecting block, and the second end of the third root connecting block is connected to the device layer in the base plate module. The shielding electrode includes a vibration structure and a fourth fixed comb tooth array. The fourth fixed comb tooth array is symmetrically arranged on both sides of the vibration structure. Both sides of the vibration structure are fixedly connected to the electrostatic drive module, and both ends of the vibration structure are fixedly connected to the support module. The fourth fixed comb tooth array is arranged intersecting with the third fixed comb tooth array.

[0009] In some embodiments, the support module includes a support beam and a connecting fulcrum, a first end of the support beam is fixedly connected to the connecting fulcrum, and a second end of the support beam is fixedly connected to the sensing and measurement module; the connecting fulcrum is disposed on the device layer in the base plate module.

[0010] In some embodiments, the voltage-sensitive element further includes a plurality of metal electrode materials disposed on the upper surface of the device layer of the base plate module.

[0011] To achieve the above objectives, another aspect of this application provides a method for fabricating a vertically electrostatically driven voltage-sensitive element, used to fabricate the aforementioned voltage-sensitive element, the method comprising: A substrate layer is obtained, and an insulating layer and a device layer are sequentially prepared on the upper surface of the substrate layer to obtain a base plate module. Strain-grown material is then performed on the device layer to obtain a first element. The strain material of the first element is etched according to the preset coordinate information to obtain the second element; The second element is photolithographically processed according to the first preset pattern template to obtain the third element, and the device layer in the third element is deep silicon etched to the insulating layer to obtain the fourth element; wherein, the fourth element includes a movable driving electrode, a fixed driving electrode, a sensing electrode, a shielding electrode and a support beam, the movable driving electrode is electrically insulated and isolated from the fixed driving electrode, and the sensing electrode is electrically insulated and isolated from the shielding electrode; The device layer of the fourth element is coated with a protective material to obtain the fifth element, and the fifth element is photolithographically processed according to a preset window to obtain the target groove area; The target groove area is sequentially subjected to development and etching processes to obtain a first groove; wherein, the bottom of the first groove is an insulating layer; The insulating layer at the bottom of the first groove is etched to obtain the target groove, and the protective material of the device layer in the fifth element is removed to obtain the voltage-sensitive element.

[0012] In some embodiments, the method further includes: A substrate layer is obtained, and an insulating layer and a device layer are sequentially prepared on the upper surface of the substrate layer to obtain a base plate module. Strain-grown material is then performed on the device layer to obtain a sixth element. The sixth element is graphically processed according to the second preset graphic template to obtain the first material shape, and the strain material in the sixth element is removed according to the first material shape to obtain the seventh element; Metal electrode material is grown on the device layer of the seventh element, and the metal electrode material is patterned according to the third preset pattern template to obtain a second material shape. The metal electrode material in the seventh element is removed according to the second material shape to obtain the eighth element. The eighth element is photolithographically processed according to the first preset pattern template to obtain the ninth element, and the device layer in the ninth element is deep silicon etched to the insulating layer to obtain the tenth element; wherein, the tenth element includes a movable driving electrode, a fixed driving electrode, a sensing electrode, a shielding electrode and a support beam, the movable driving electrode is electrically insulated and isolated from the fixed driving electrode, and the sensing electrode is electrically insulated and isolated from the shielding electrode; The device layer of the tenth element is coated with a protective material to obtain the eleventh element, and the eleventh element is photolithographically processed according to a preset window to obtain the target groove area; The target groove area is sequentially subjected to development and etching processes to obtain a first groove; wherein, the bottom of the first groove is an insulating layer; The insulating layer at the bottom of the first groove is etched to obtain the target groove, and the protective material of the device layer in the eleventh element is removed to obtain the voltage-sensitive element.

[0013] In some embodiments, the strain material includes metallic or non-metallic materials, and the strain material growth includes any one of magnetron sputtering, electron beam evaporation, ion beam sputtering, low-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, or electroplating.

[0014] To achieve the above objectives, another aspect of this application provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the method described above.

[0015] To achieve the above objectives, another aspect of the embodiments of this application proposes a computer-readable storage medium storing a computer program that, when executed by a processor, implements the methods described above.

[0016] To achieve the above objectives, another aspect of the embodiments of this application proposes a computer program product, including a computer program that, when executed by a processor, implements the aforementioned method.

[0017] The embodiments of this application include at least the following beneficial effects: This application provides a vertically electrostatically driven voltage-sensitive element and its preparation method, apparatus, electronic device, storage medium, and program product. This solution comprises a voltage-sensitive element consisting of a base plate module, an electrostatic driving module, a sensing and measurement module, and a support module. The electrostatic driving module, sensing and measurement module, and support module are mounted on the base plate module. The electrostatic driving module is symmetrically arranged on both sides of the sensing and measurement module. The electrostatic driving module vibrates vertically based on electrostatic force, and the sensing and measurement module, driven by the electrostatic driving module, also vibrates vertically, thereby measuring the current electric field of the voltage-sensitive element. The support module connects to the sensing and measurement module to support its vertical vibration. By driving the sensing and measurement module to vibrate vertically based on electrostatic force, the electric field is sensed and measured, improving the measurement sensitivity. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a vertically electrostatically driven voltage-sensitive element provided in an embodiment of this application; Figure 2 This is a schematic diagram of the electrostatic drive module in a vertically electrostatically driven voltage-sensitive element provided in an embodiment of this application; Figure 3 This is a schematic diagram of the induction measurement module in a vertically electrostatically driven voltage-sensitive element provided in an embodiment of this application; Figure 4 This is a flowchart illustrating a method for fabricating a vertically electrostatically driven voltage-sensitive element according to an embodiment of this application; Figure 5 This is another flowchart of a method for fabricating a vertically electrostatically driven voltage-sensitive element provided in an embodiment of this application; Figure 6 This is a hardware structure diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit it. In the following description, when referring to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with those of this application; they are merely examples of apparatuses and methods consistent with some aspects of the embodiments of this application as detailed in the appended claims.

[0020] It is understood that the terms “first,” “second,” etc., used in this application may be used herein to describe various concepts, but unless otherwise stated, these concepts are not limited by these terms. These terms are only used to distinguish one concept from another. For example, without departing from the scope of the embodiments of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the words “if,” “when,” or “in response to a determination” as used herein may be interpreted as “when…” or “when…” or “in response to a determination.”

[0021] As used in this application, the terms "at least one", "multiple", "each", "any", etc., "at least one" includes one, two or more, "multiple" includes two or more, "each" refers to each of the corresponding multiples, and "any" refers to any one of the multiples.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0023] Figure 1 This is a schematic diagram of an optional structure of a vertically electrostatically driven voltage-sensitive element provided in an embodiment of this application. Figure 1 The voltage-sensitive element includes a base plate module, an electrostatic drive module, a sensing and measurement module, and a support module; wherein: The electrostatic drive module is mounted on the base plate module and is connected to the induction measurement module. The electrostatic drive module is symmetrically arranged on both sides of the induction measurement module and is used to perform vertical vibration based on electrostatic force. The induction measurement module is mounted on the base plate module, and its two ends are connected to the support module. The induction measurement module is used to measure the current electric field based on the vertical vibration of the electrostatic drive module. The support module is mounted on the base plate module and is connected to the sensing and measurement module; the support module is used to support the sensing and measurement module to perform vertical vibration.

[0024] In some embodiments, a vertically electrostatically driven voltage-sensitive element provided in this application comprises a base plate module, an electrostatic driving module, a sensing and measurement module, and a support module. The electrostatic driving module, sensing and measurement module, and support module are mounted on the base plate module. The electrostatic driving module is connected to the sensing and measurement module and is used to vibrate vertically under the drive of electrostatic force, causing the movable structure in the sensing and measurement module to follow suit with vertical vibration, thereby causing a change in the electric field of the measurement structure in the sensing and measurement module, and thus calculating the magnitude of the external electric field or voltage measured by the voltage-sensitive element. The support module and the sensing and measurement module... The connection is used to support the sensing measurement module to follow the electrostatic drive module in vertical up-and-down vibration. The elastic deformation of the support component restores the movable structure in the sensing measurement module to its initial position, thereby enabling repeated measurements. In this embodiment, an insulating layer 3 is provided on the substrate layer 1, followed by a device layer 2. Different electrodes and corresponding structures are designed based on the device layer 2, including a movable drive electrode 5, a sensing electrode 8, a shielding electrode 7, and a support beam 9. A metal electrode material 10 is provided on the device layer to extract the measured electric field signal. In this embodiment, a strain material 6 is provided on the fixed drive electrode to generate electrostatic force for up-and-down vibration.

[0025] In some embodiments, the base plate module includes a substrate layer, a device layer, and an insulating layer; wherein... An insulating layer is disposed between the device layer and the substrate layer; the device layer is connected to the electrostatic drive module, the induction measurement module and the support module respectively.

[0026] In some embodiments, the base plate module has a structure from top to bottom consisting of a device layer, an insulating layer, and a substrate layer. The device layer is used to set or connect the electrostatic drive module, the sensing measurement module, and the support module in the voltage-sensitive element. The insulating layer is used to achieve electrical insulation between different modules to avoid interference between different modules during voltage or electric field measurement, thereby affecting the measurement accuracy.

[0027] In some embodiments, the base plate module further includes a groove, which is disposed in the coverage area of ​​the electrostatic drive module, the induction measurement module and the support module, and the bottom of the groove is a substrate layer.

[0028] In some embodiments, the base plate module may also be provided with a groove of a certain depth to increase the vibration amplitude of the electrostatic drive module when it vibrates up and down in the vertical direction under the drive of electrostatic force, thereby improving the sensing capability of the sensing measurement module and thus improving the measurement sensitivity of the voltage sensitive element. In this embodiment, the groove is provided in the area covered by the electrostatic drive module, the sensing drive module and the support module, and the device layer and the insulating layer in this area are removed, thereby increasing the vibration amplitude and thus improving the measurement sensitivity.

[0029] Please see Figure 2 , Figure 2 This is a schematic diagram of the electrostatic drive module in a vertically electrostatically driven voltage-sensitive element according to an embodiment of this application. The electrostatic drive module includes several electrostatic drive electrode groups, which are symmetrically arranged on both sides of the sensing and measurement module. Each electrostatic drive electrode group includes a fixed drive electrode, a movable drive electrode, and a strain material. The fixed drive electrode includes a first root connecting block and a first fixed comb array, the first fixed comb array being disposed on the side of the first root connecting block; the first end of the first root connecting block is fixedly connected to the device layer in the base plate module, and the second end of the first root connecting block is suspended. The movable drive electrode includes a second root connecting block and a second fixed comb tooth array. The second fixed comb tooth array is disposed on the side of the second root connecting block. The first end of the second root connecting block is fixedly connected to the sensing and measurement module, and the second end of the second root connecting block is suspended. The second fixed comb tooth array is arranged intersecting with the first fixed comb tooth array. The strain material is disposed on the upper surface of the first root connecting block or on the upper surface of the second root connecting block; wherein the strain material is used to cause stress warping in the first root connecting block or the second root connecting block.

[0030] In some embodiments, the electrostatic drive module includes multiple electrostatic drive electrode groups symmetrically arranged on both sides of the sensing and measurement module. In this embodiment, the electrostatic drive electrode groups are symmetrically arranged on both sides of the movable structure in the sensing and measurement module so that the movable structure in the sensing and measurement module can vibrate up and down under electrostatic force. Each electrostatic drive electrode group consists of a fixed drive electrode, a movable drive electrode, and a strain material. The fixed drive electrode consists of a first root connecting block and a first fixed comb tooth array disposed on one side of the first root connecting block. The second end of the first root connecting block is suspended, and the first end is connected to the device layer. The movable drive electrode consists of a second root connecting block and a second fixed comb tooth array disposed on one side of the second root connecting block. One end is connected to a movable structure in the sensing and measurement module to drive it to vibrate up and down, and the second end of the second root connecting block is suspended; the first fixed comb tooth array and the second fixed comb tooth array are arranged crosswise to be driven by the generated electrostatic force; at the same time, strain material is provided on the upper surface of the first root connecting block of the fixed driving electrode or the upper surface of the second root connecting block of the movable driving electrode, and the strain material cannot be provided on the upper surface of the first root connecting block of the fixed driving electrode or the upper surface of the second root connecting block of the movable driving electrode at the same time. The strain material causes the fixed driving electrode or the movable driving electrode to generate vertically upward stress warping, so that the first fixed comb tooth array and the second fixed comb tooth array are not on the same plane, thereby generating electrostatic force for driving; in this embodiment, according to Figure 2 The electrostatic drive module shown uses a metal electrode material 10 to input voltage. The fixed drive electrode 4 is connected to the device layer 2 and is electrically insulated from the movable drive electrode 5 through the insulating layer 3. The fixed drive electrode 4 warps under the action of the strain material 6, so that it is not on the same plane as the movable drive electrode 5, thereby generating an electrostatic force to drive the movable drive electrode 5 to vibrate up and down.

[0031] Please see Figure 3 , Figure 3 This application provides a sensing measurement module for a vertically electrostatically driven voltage-sensitive element. The sensing measurement module includes two sensing electrodes and one shielding electrode, with the sensing electrodes symmetrically arranged on both sides of the shielding electrode; wherein, The sensing electrode includes a third root connecting block and a third fixed comb array. The third fixed comb array is disposed at the first end of the third root connecting block, and the second end of the third root connecting block is connected to the device layer in the base plate module. The shielding electrode includes a vibration structure and a fourth fixed comb tooth array. The fourth fixed comb tooth array is symmetrically arranged on both sides of the vibration structure. Both sides of the vibration structure are fixedly connected to the electrostatic drive module, and both ends of the vibration structure are fixedly connected to the support module. The fourth fixed comb tooth array is arranged intersecting with the third fixed comb tooth array.

[0032] In some embodiments, the inductive measurement module consists of two inductive electrodes and a shielding electrode, with inductive motors correspondingly disposed on both sides of the shielding electrode. The inductive electrode consists of a third root connecting block and a third fixed comb tooth array disposed at the first end of the third root connecting block, with the second end of the third root connecting block connected to the device layer. The shielding electrode consists of a movable vibrating structure and a fourth fixed comb tooth array disposed on both sides of the vibrating structure. The third and fourth fixed comb tooth arrays are arranged crosswise so that when the shielding electrode vibrates up and down, it periodically shields the inductive electrode, thereby causing a change in the induced charge of the inductive electrode under the action of the external electric field to be measured, thereby calculating the magnitude of the electric field to be measured. At the same time, the two ends of the vibrating structure in the shielding electrode are connected to the support module to realize the up and down vibration of the shielding electrode.

[0033] In some embodiments, the support module includes a support beam and a connecting fulcrum. A first end of the support beam is fixedly connected to the connecting fulcrum, and a second end of the support beam is fixedly connected to the sensing and measurement module. The connecting fulcrum is disposed on the device layer in the base plate module.

[0034] In some embodiments, the support module consists of a support beam and a connecting fulcrum. The first end of the support beam is connected to the connecting fulcrum, and the second end of the support beam is connected to the vibration structure in the sensing and measurement module. At the same time, the connecting fulcrum is connected to the device layer. Externally input electrical signals or electrical signals generated by the shielding electrode can be imported or exported through the support beam, the connecting fulcrum, and the device layer. In this embodiment, in order to ensure the force balance of the shielding electrode, the electrostatic drive module is symmetrically arranged on both sides of the vibration structure of the shielding electrode, and a support structure is symmetrically arranged to support the shielding electrode to vibrate up and down.

[0035] In some embodiments, the voltage-sensitive element further includes a plurality of metal electrode materials disposed on the upper surface of the device layer of the base plate module.

[0036] In some embodiments, in order to measure the electrical signal obtained by the voltage-sensitive unit and to cause the electrostatic drive module to generate electrostatic force to vibrate up and down, a metal electrode material is disposed on the device layer surface of the voltage-sensitive element.

[0037] Figure 4 This is an optional flowchart of a method for fabricating a vertically electrostatically driven voltage-sensitive element provided in an embodiment of this application. Figure 4 The method may include, but is not limited to, steps S401 to S406: Step S401: Obtain the substrate layer, and sequentially prepare an insulating layer and a device layer on the upper surface of the substrate layer to obtain the base plate module, and perform strain material growth on the device layer to obtain the first element; Step S402: Etch the strain material of the first element according to the preset coordinate information to obtain the second element; Step S403: The second element is photolithographically processed according to the first preset pattern template to obtain the third element, and the device layer in the third element is deep silicon etched to the insulating layer to obtain the fourth element; wherein, the fourth element includes a movable driving electrode, a fixed driving electrode, a sensing electrode, a shielding electrode and a support beam, the movable driving electrode and the fixed driving electrode are electrically insulated and isolated, and the sensing electrode and the shielding electrode are electrically insulated and isolated. Step S404: Apply a protective material to the device layer of the fourth element to obtain the fifth element, and perform photolithography on the fifth element according to the preset window to obtain the target groove area; Step S405: The target groove area is sequentially developed and etched to obtain the first groove; wherein, the bottom of the first groove is an insulating layer; Step S406: Etch the insulating layer at the bottom of the first groove to obtain the target groove, and remove the protective material of the device layer in the fifth element to obtain the voltage-sensitive element.

[0038] Steps S401 to S406 of this embodiment involve obtaining a substrate layer and sequentially fabricating an insulating layer and a device layer on the substrate layer to obtain a base plate module. Based on the base plate module, an electrostatic drive module, a sensing measurement module, and a support module are fabricated. First, strain material is grown on the current device layer to induce stress warping on the fixed or movable drive electrodes in the electrostatic drive module, thus obtaining a first element. Then, the shape of the strain material on the fixed or movable drive electrodes is etched onto the surface of the device layer. In this embodiment, a method compatible with laser etching, ultraviolet lithography, and etching processes can be used to pattern the shape of the strain material. Then, the remaining portion of the strain material is etched away to obtain a second element. On the surface of the device layer of the second element, spin-coated photoresist and ultraviolet exposure lithography using a preset pattern template are applied to define the shapes of the movable drive electrode, fixed drive electrode, sensing electrode, shielding electrode, and support beam on the device layer surface. Then, a deep silicon etching process is used to etch the movable drive electrode, fixed drive electrode, sensing electrode, and shielding electrode. The device layers are etched away to achieve isolation and electrical insulation, resulting in a fourth element. A protective material is then coated onto the surface of the fourth element's device layer. In this embodiment, positive photoresist, negative photoresist, or other materials with good ductility for thin-film fabrication can be used to protect the sensitive structure from subsequent processing, resulting in a fifth element. The fifth element is then patterned according to a preset window pattern to determine the area to be etched to form a groove. The groove area is then developed to remove the protective material. This area is then etched until the bottom is an insulating layer. In this embodiment, deep silicon etching or wet etching can be used to etch the device layer. The insulating layer at the bottom of this area is then etched to remove it, resulting in a groove. In this embodiment, fluorine-based gas dry etching and buffered hydrofluoric acid solution wet etching can be used. The remaining protective material on the surface of the fifth element is then removed to obtain a voltage-sensitive element. In this embodiment, oxygen plasma etching can be used for removal, but it is not limited to this method.

[0039] Please see Figure 5 In some embodiments, the method for fabricating a vertically electrostatically driven voltage-sensitive element provided in this application may also include, but is not limited to, steps S501 to S507: Step S501: Obtain the substrate layer, and sequentially prepare an insulating layer and a device layer on the upper surface of the substrate layer to obtain the base plate module, and perform strain material growth on the device layer to obtain the sixth element; Step S502: The sixth element is graphically processed according to the second preset graphic template to obtain the first material shape, and the strain material in the sixth element is removed according to the first material shape to obtain the seventh element. Step S503: Metal electrode material is grown on the device layer of the seventh element, and the metal electrode material is patterned according to the third preset pattern template to obtain the second material shape. The metal electrode material in the seventh element is removed according to the second material shape to obtain the eighth element. Step S504: The eighth element is photolithographically processed according to the first preset pattern template to obtain the ninth element, and the device layer in the ninth element is deep silicon etched to the insulating layer to obtain the tenth element; wherein, the tenth element includes a movable driving electrode, a fixed driving electrode, a sensing electrode, a shielding electrode and a support beam, the movable driving electrode and the fixed driving electrode are electrically insulated and isolated, and the sensing electrode and the shielding electrode are electrically insulated and isolated. Step S505: Apply protective material to the device layer of the tenth element to obtain the eleventh element, and perform photolithography on the eleventh element according to the preset window to obtain the target groove area. Step S506: The target groove area is sequentially developed and etched to obtain the first groove; wherein, the bottom of the first groove is an insulating layer; Step S507: Etch the insulating layer at the bottom of the first groove to obtain the target groove, and remove the protective material of the device layer in the eleventh element to obtain the voltage-sensitive element.

[0040] Steps S501 to S506 of this embodiment involve sequentially fabricating an insulating layer and a device layer on a substrate to obtain a base plate module. Based on the base plate module, an electrostatic drive module, an induction measurement module, and a support module are fabricated. First, strain material is grown on the current device layer to induce stress warping on the fixed or movable drive electrodes in the electrostatic drive module, thus obtaining the sixth element. Then, the shape of the strain material on the fixed or movable drive electrodes is etched onto the surface of the device layer. In this embodiment, a process compatible with laser etching, ultraviolet lithography, and etching can be used to pattern the shape of the strain material. Then, the remaining portion of the strain material is etched... The seventh element is obtained by etching. Then, a metal electrode material is grown on the surface of the seventh element, and the electrode used for signal connection with the outside is retained by photolithography etching. The remaining metal electrode material is removed to obtain the eighth element. Then, the eighth element is processed in the previous step S403 to fabricate a movable drive electrode, a fixed drive electrode, a sensing electrode, a shielding electrode, and a support beam on the eighth element. At the same time, the device layer between the movable drive electrode and the fixed drive electrode, and between the sensing electrode and the shielding electrode, is removed to achieve electrical insulation and isolation, thereby obtaining the tenth element. The tenth element is processed in steps S404, S405, and S406 in sequence to obtain a voltage-sensitive element.

[0041] In some embodiments, the strained material includes metallic or non-metallic materials, and the strained material growth includes any one of magnetron sputtering, electron beam evaporation, ion beam sputtering, low-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, or electroplating.

[0042] In some embodiments, the strain material can be a metallic material, such as silver, platinum, or aluminum, or a non-metallic material, such as silicon oxide, silicon nitride, or polycrystalline silicon, which are compatible with semiconductor processes and have stress with the silicon substrate during growth. The strain material is grown on the device layer using any one of the following processes: magnetron sputtering, electron beam evaporation, ion beam sputtering, low-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, or electroplating. In a specific embodiment, the deformation amplitude of the driving electrode can be changed by altering the thickness, width, and length of the strain material 6, as well as by changing the structural parameters of the driving electrode. This changes the vibration amplitude of the sensitive structure, the sensitivity of the sensor, and the amplitude of the driving voltage. The embodiments of this application include at least the following beneficial effects: This application provides a vertically electrostatically driven voltage-sensitive element and its preparation method, apparatus, electronic device, storage medium, and program product. This solution comprises a voltage-sensitive element consisting of a base plate module, an electrostatic driving module, a sensing and measurement module, and a support module. The electrostatic driving module, sensing and measurement module, and support module are mounted on the base plate module. The electrostatic driving module is symmetrically arranged on both sides of the sensing and measurement module. The electrostatic driving module vibrates vertically based on electrostatic force, and the sensing and measurement module, driven by the electrostatic driving module, also vibrates vertically, thereby measuring the current electric field of the voltage-sensitive element. The support module connects to the sensing and measurement module to support its vertical vibration. By driving the sensing and measurement module to vibrate vertically based on electrostatic force, the electric field is sensed and measured, improving the measurement sensitivity.

[0043] This application also provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the above-described method. This electronic device can be any smart terminal, including tablet computers, in-vehicle computers, etc.

[0044] It is understood that the content of the above method embodiments is applicable to this device embodiment. The specific functions implemented by this device embodiment are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0045] Please see Figure 6 , Figure 6 The hardware structure of an electronic device according to another embodiment is illustrated. The electronic device includes: The processor 601 can be implemented using a general-purpose CPU (Central Processing Unit), microprocessor, application-specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute relevant programs to implement the technical solutions provided in the embodiments of this application. The memory 602 can be implemented as a read-only memory (ROM), a static storage device, a dynamic storage device, or a random access memory (RAM). The memory 602 can store the operating system and other application programs. When the technical solutions provided in the embodiments of this specification are implemented through software or firmware, the relevant program code is stored in the memory 602 and is called and executed by the processor 601 using the methods described in the embodiments of this application. The input / output interface 603 is used to implement information input and output; The communication interface 604 is used to enable communication and interaction between this device and other devices. Communication can be achieved through wired means (such as USB, network cable, etc.) or wireless means (such as mobile network, WIFI, Bluetooth, etc.). Bus 605 transmits information between various components of the device (e.g., processor 601, memory 602, input / output interface 603, and communication interface 604); The processor 601, memory 602, input / output interface 603, and communication interface 604 are connected to each other within the device via bus 605.

[0046] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method.

[0047] It is understood that the content of the above method embodiments is applicable to this storage medium embodiment. The specific functions implemented in this storage medium embodiment are the same as those in the above method embodiments, and the beneficial effects achieved are also the same as those achieved in the above method embodiments.

[0048] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method.

[0049] It is understood that the content of the above method embodiments is applicable to the embodiments of this program product. The specific functions implemented by the embodiments of this program product are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0050] Memory, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs and non-transitory computer-executable programs. Furthermore, memory may include high-speed random access memory, and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, memory may optionally include memory remotely located relative to the processor, and these remote memories can be connected to the processor via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

[0051] The embodiments described in this application are for the purpose of more clearly illustrating the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions provided by the embodiments of this application. As those skilled in the art will know, with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of this application are also applicable to similar technical problems.

[0052] Those skilled in the art will understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of this application, and may include more or fewer steps than shown, or combine certain steps, or different steps.

[0053] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0054] Those skilled in the art will understand that all or some of the steps in the methods disclosed above, as well as the functional modules / units in the systems and devices, can be implemented as software, firmware, hardware, or suitable combinations thereof.

[0055] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0056] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0057] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of the units described above is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0058] The units described above as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0059] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0060] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes multiple instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing programs, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0061] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but this does not limit the scope of the claims of the present application. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and substance of the embodiments of the present application shall be within the scope of the claims of the present application.

Claims

1. A voltage-sensitive element driven by vertical electrostatics, characterized in that, The voltage-sensitive element includes a base plate module, an electrostatic drive module, a sensing and measurement module, and a support module; wherein: The electrostatic drive module is mounted on the base plate module and is connected to the sensing and measurement module; wherein, the electrostatic drive module is symmetrically arranged on both sides of the sensing and measurement module, and the electrostatic drive module is used to perform vertical vibration based on electrostatic force; The sensing measurement module is mounted on the base plate module, and its two ends are connected to the support module. The sensing measurement module is used to measure the current electric field based on the vertical vibration of the electrostatic drive module. The support module is mounted on the base plate module and is connected to the sensing and measurement module; wherein, the support module is used to support the sensing and measurement module to perform vertical vibration.

2. The voltage-sensitive element according to claim 1, characterized in that, The base plate module includes a substrate layer, a device layer, and an insulating layer; wherein... The insulating layer is disposed between the device layer and the substrate layer; the device layer is connected to the electrostatic drive module, the inductive measurement module and the support module respectively.

3. The voltage-sensitive element according to claim 2, characterized in that, The base plate module also includes a groove, which is disposed in the coverage area of ​​the electrostatic drive module, the induction measurement module and the support module, and the bottom of the groove is a substrate layer.

4. The voltage-sensitive element according to claim 1, characterized in that, The electrostatic drive module includes several electrostatic drive electrode groups, which are symmetrically arranged on both sides of the induction measurement module. Each electrostatic drive electrode group includes a fixed drive electrode, a movable drive electrode, and a strain material. The fixed driving electrode includes a first root connecting block and a first fixed comb array, the first fixed comb array being disposed on the side of the first root connecting block; the first end of the first root connecting block is fixedly connected to the device layer in the base plate module, and the second end of the first root connecting block is suspended. The movable drive electrode includes a second root connecting block and a second fixed comb tooth array. The second fixed comb tooth array is disposed on the side of the second root connecting block. The first end of the second root connecting block is fixedly connected to the sensing and measuring module, and the second end of the second root connecting block is suspended. The second fixed comb tooth array is arranged intersecting with the first fixed comb tooth array. The strain material is disposed on the upper surface of the first root connecting block, or the strain material is disposed on the upper surface of the second root connecting block; wherein the strain material is used to cause the first root connecting block or the second root connecting block to undergo stress warping.

5. The voltage-sensitive element according to claim 1, characterized in that, The sensing measurement module includes two sensing electrodes and one shielding electrode, with the sensing electrodes symmetrically arranged on both sides of the shielding electrode; wherein, The sensing electrode includes a third root connecting block and a third fixed comb tooth array. The third fixed comb tooth array is disposed at the first end of the third root connecting block, and the second end of the third root connecting block is connected to the device layer in the base plate module. The shielding electrode includes a vibration structure and a fourth fixed comb tooth array. The fourth fixed comb tooth array is symmetrically arranged on both sides of the vibration structure. Both sides of the vibration structure are fixedly connected to the electrostatic drive module, and both ends of the vibration structure are fixedly connected to the support module. The fourth fixed comb tooth array is arranged intersecting with the third fixed comb tooth array.

6. The voltage-sensitive element according to claim 1, characterized in that, The support module includes a support beam and a connecting fulcrum. The first end of the support beam is fixedly connected to the connecting fulcrum, and the second end of the support beam is fixedly connected to the sensing and measurement module. The connecting fulcrum is located on the device layer in the base plate module.

7. The voltage-sensitive element according to any one of claims 1-6, characterized in that, The voltage-sensitive element also includes several metal electrode materials, which are disposed on the upper surface of the device layer of the base plate module.

8. A method for fabricating a vertically electrostatically driven voltage-sensitive element, used to fabricate the voltage-sensitive element according to any one of claims 1-7, characterized in that, The method includes: A substrate layer is obtained, and an insulating layer and a device layer are sequentially prepared on the upper surface of the substrate layer to obtain a base plate module. Strain-grown material is then performed on the device layer to obtain a first element. The strain material of the first element is etched according to the preset coordinate information to obtain the second element; The second element is photolithographically processed according to the first preset pattern template to obtain the third element, and the device layer in the third element is deep silicon etched to the insulating layer to obtain the fourth element; wherein, the fourth element includes a movable driving electrode, a fixed driving electrode, a sensing electrode, a shielding electrode and a support beam, the movable driving electrode is electrically insulated and isolated from the fixed driving electrode, and the sensing electrode is electrically insulated and isolated from the shielding electrode; The device layer of the fourth element is coated with a protective material to obtain the fifth element, and the fifth element is photolithographically processed according to a preset window to obtain the target groove region; The target groove area is sequentially subjected to development and etching processes to obtain a first groove; wherein, the bottom of the first groove is an insulating layer; The insulating layer at the bottom of the first groove is etched to obtain the target groove, and the protective material of the device layer in the fifth element is removed to obtain the voltage-sensitive element.

9. The method according to claim 8, characterized in that, The method further includes: A substrate layer is obtained, and an insulating layer and a device layer are sequentially prepared on the upper surface of the substrate layer to obtain a base plate module. Strain-grown material is then performed on the device layer to obtain a sixth element. The sixth element is graphically processed according to the second preset graphic template to obtain the first material shape, and the strain material in the sixth element is removed according to the first material shape to obtain the seventh element; Metal electrode material is grown on the device layer of the seventh element, and the metal electrode material is patterned according to the third preset pattern template to obtain a second material shape. The metal electrode material in the seventh element is removed according to the second material shape to obtain the eighth element. The eighth element is photolithographically processed according to the first preset pattern template to obtain the ninth element, and the device layer in the ninth element is deep etched to the insulating layer to obtain the tenth element; wherein, the tenth element includes a movable driving electrode, a fixed driving electrode, a sensing electrode, a shielding electrode and a support beam, the movable driving electrode is electrically insulated and isolated from the fixed driving electrode, and the sensing electrode is electrically insulated and isolated from the shielding electrode; The device layer of the tenth element is coated with a protective material to obtain the eleventh element, and the eleventh element is photolithographically processed according to a preset window to obtain the target groove area; The target groove area is sequentially subjected to development and etching processes to obtain a first groove; wherein, the bottom of the first groove is an insulating layer; The insulating layer at the bottom of the first groove is etched to obtain the target groove, and the protective material of the device layer in the eleventh element is removed to obtain the voltage-sensitive element.

10. The method according to any one of claims 8-9, characterized in that, The strain material includes metallic or non-metallic materials, and the growth of the strain material includes any one of magnetron sputtering, electron beam evaporation, ion beam sputtering, low-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, or electroplating.

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