A 62mm IGBT power module and its packaging method

Abstract

This invention provides a 62mm IGBT power module and its packaging method, comprising: soldering the chip to a single DBC; soldering the DBC to a base plate; fixing the housing to the base plate; the housing includes a housing body and signal terminals; the signal terminals are built into the housing body, with both ends located outside the housing body; performing wire bonding and power terminal soldering; the bonding between the signal terminals and the DBC and the bonding between the copper layers inside the DBC uses aluminum-clad copper wire; the power terminal soldering uses ultrasonic cold pressing soldering; filling the housing with insulating silicone and installing the top cover. This IGBT power module packaging method uses aluminum-clad copper wire for bonding between the signal terminals and the DBC, and between the copper layers of the DBC, which significantly optimizes conductivity, heat dissipation, reliability, oxidation resistance, and production cost compared to pure aluminum or pure copper wire; the ultrasonic cold pressing soldering for power terminal soldering improves the reliability of permanent connections; it reduces one high-temperature soldering and cleaning process, reducing production energy consumption and waste discharge.

Description

Technical Field

[0001] This invention belongs to the field of IGBT power module packaging technology, specifically relating to a 62mm IGBT power module and its packaging method. Background Technology

[0002] An IGBT module is a power switching device used for efficient power conversion and control. From bottom to top, an IGBT power module consists of: a base plate, a DBC substrate, a chip, and terminals. The chip is soldered to the DBC at the bottom and connected to the DBC copper foil at the top via bonding wires. The DBC is soldered to the base plate, and the terminals are led out from the DBC or chip to the outside of the module, which is then encapsulated in a housing. The current industry standard for mass-producing 62mm IGBT power modules is as follows: solder paste printing on the DBC motherboard; chip mounting; high-temperature PINK soldering of the entire motherboard; overall motherboard cleaning; motherboard splitting and cutting into independent DBC sub-units; soldering the independent DBC sub-units to the copper base plate; ultrasonic bonding with all-aluminum wires (all chip power areas, signal terminals, and DBC copper layer interconnections use pure aluminum leads); high-temperature soldering assembly of power terminals and separate signal terminals; secondary module cleaning; injection molding and encapsulation of the housing, silicone potting, and nut assembly; and final electrical performance testing. Its product structure adopts a split small DBC substrate layout, with signal terminals individually soldered to the surfaces of two independent small DBCs. The small DBCs and the internal power units are electrically connected by pure aluminum bonding wires.

[0003] The existing conventional process uses array processing for the motherboard, which has high output efficiency per unit during mass production; the pure aluminum lead wire and soldering assembly process is mature and the raw material procurement cost is low. However, there are the following shortcomings: (1) The process includes three high-temperature soldering processes: chip soldering, DBC soldering to the base plate, and terminal assembly, as well as two whole-machine cleaning processes. The high-temperature heating has high energy consumption, and the cleaning generates a large amount of flux waste liquid, resulting in high wastewater treatment costs, which does not meet the green and low-carbon manufacturing standards. At the same time, multi-layer soldering will cause excessive growth of intermetallic compounds (IMC) on the back of the chip. The IMC layer is brittle and has high conductivity resistance. Under cold and hot cycles, it is easy to cause interface delamination and cracking, which will aggravate the long-term reliability failure of the module. (2) The thermal expansion coefficients of the power terminals, DBC copper layer and ceramic substrate are significantly different. Under the high and low temperature alternating conditions of multiple soldering, the intermediate soldering layer continuously bears the cyclic thermal stress. After long-term use, the terminal is poorly soldered and the solder layer falls off, which directly leads to the module's open circuit failure. (3) All interconnects use pure aluminum leads. Aluminum has high resistivity, low mechanical strength, and weak creep resistance. Specifically, the signal circuit with aluminum wire has high DC resistance, resulting in high transmission loss of weak drive and temperature measurement signals, which easily leads to temperature measurement distortion and gate oscillation. After thousands of power cycles, the aluminum bonding points are prone to slippage and lead wire breakage, with contact resistance drift exceeding 30%, significantly shortening the module's service life. (4) In the traditional solution, the signal terminals are soldered on two independent small DBC substrates. The small copper layer of the small-sized DBC has a small bonding area with the ceramic substrate, making it easy for the copper layer to peel off and delaminate during the reliability accelerated aging test, directly causing electrical failures in the module. (5) The motherboard cutting process easily leads to a high defect rate and high production losses. During the array motherboard cutting process, mechanical stress easily causes cracking of the DBC ceramic substrate and scratches on the surface copper metal layer. The high defect rate of finished products directly reduces the yield of the production line and increases the cost of scrapping raw materials. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a 62mm IGBT power module and its packaging method. The bonding between the signal terminals and the DBC, and between the copper layers inside the DBC, adopts aluminum-clad copper wire, which significantly optimizes conductivity, heat dissipation, reliability, oxidation resistance, process window, and production cost compared to pure aluminum or pure copper wire. The power terminal welding adopts ultrasonic cold pressure welding, which significantly improves the reliability of permanent connection of the power terminals. Compared with traditional processes, it reduces one high-temperature soldering and cleaning process, which can reduce production energy consumption and waste liquid discharge. The production yield is high and the environmental protection is high.

[0005] To address the aforementioned problems, a first aspect of the present invention provides a packaging method for a 62mm IGBT power module, comprising the following steps: S1. A single-chip DBC is used to solder the chip onto the DBC; S2. Solder the DBC with the chip soldered on to the base plate; S3. Fix the outer casing to the base plate; the outer casing includes an outer casing body and signal terminals; the signal terminals are built into the outer casing body, and both ends of the signal terminals are located outside the outer casing body; S4. Perform wire bonding and power terminal soldering; the wire bonding includes bonding between signal terminals and DBC and bonding between copper layers of different power sub-units inside DBC; the bonding between signal terminals and DBC uses aluminum-clad copper wire; the bonding between copper layers of different power sub-units inside DBC uses aluminum-clad copper wire; the power terminal soldering uses ultrasonic cold pressing soldering. S5. Fill the housing with insulating silicone, then install the top cover to complete the encapsulation of the IGBT power module.

[0006] Preferably, the aluminum-clad copper wire includes a copper core and an aluminum cladding layer; the aluminum cladding layer covers the outer layer of the copper core; the bus diameter of the aluminum-clad copper wire is 15~25μm, and the thickness of the aluminum cladding layer accounts for 10%~15% of the total diameter.

[0007] Preferably, the process conditions for bonding between the signal terminals and the DBC and / or bonding between copper layers of different power sub-units within the DBC are as follows: The ultrasonic power is 50~80mW; the bonding pressure is 35~65g; and the bonding time is 12~28ms.

[0008] Preferably, the ultrasonic cold pressing welding process conditions for the power terminals are as follows: The welding pressure is 280~350N; the welding amplitude is 60%~80%; the deformation is 25%~50% of the power terminal; the ultrasonic frequency is 20 kHz; and the welding time is 0.1~10s.

[0009] Preferably, the wire bonding further includes bonding between chips and bonding between the chip emitter and the DBC power copper layer; the bonding between chips and / or the bonding between the chip emitter and the DBC power copper layer uses aluminum wire.

[0010] Preferably, the signal terminal is made of copper; the portion of the signal terminal located on the outside of the housing body is plated with a nickel layer.

[0011] Preferably, soldering the chip onto the DBC specifically includes the following steps: Set solder pads on the DBC; then set IGBTs and FRDs on the solder pads; perform vacuum reflow soldering on the DBC after setting IGBTs and FRDs, and check the solder void rate by X-ray inspection to ensure it is ≤3%.

[0012] Preferably, soldering the DBC with the chip soldered on to the base plate specifically includes the following steps: Set solder pads on the base plate; then set DBCs on the solder pads; solder the base plate after setting DBCs, and inspect the individual void rate (≤2%) and the overall void rate (≤5%) by X-ray inspection.

[0013] Preferably, when bonding the signal terminal to the DBC and / or bonding the copper layers of different power sub-units inside the DBC, the arch height of the aluminum-clad copper wire is controlled to be 1~10mm; the span of the aluminum-clad copper wire is 1~30mm.

[0014] A second aspect of the present invention provides a 62mm IGBT power module obtained by the above-described IGBT power module packaging method.

[0015] Compared with the prior art, the present invention has the following advantages: The packaging method of the 62mm IGBT power module of the present invention is as follows: 1. The bonding between the signal terminals and the DBC, and the bonding between the copper layers of different power sub-units inside the DBC, adopt aluminum-clad copper wire. Compared with pure aluminum wire, the resistivity of the copper core inside the aluminum-clad copper wire is only 60% of that of aluminum, which can reduce the DC resistance of the signal circuit by more than 35%, and significantly reduce the transmission loss of the drive signal; while the thermal conductivity of the copper core is 1.8 times that of aluminum, which improves the heat dissipation efficiency of the signal area and reduces the steady-state junction temperature of the module by 2~5℃; and the tensile and creep resistance of the copper core is far superior to that of pure aluminum. After 1000 power cycles, there is no slippage or breakage of the leads, and the contact resistance drift can be controlled within 8%, which is far better than the drift of more than 30% of pure aluminum wire, and can effectively suppress gate oscillation and temperature measurement distortion. Compared to pure copper wire, aluminum-clad copper wire has an outer aluminum layer that isolates it from air, eliminating the risk of oxidation during storage at room temperature before encapsulation. It also eliminates the need for a high-purity nitrogen-sealed bonding cavity, resulting in lower equipment modification costs. The outer aluminum layer is soft, reducing the impact of ultrasonic bonding and preventing scratches on the thin metallized layer of the DBC. This also reduces cutter wear and significantly lowers material costs. Furthermore, the unit price of aluminum-clad copper raw materials is lower than that of high-purity bare copper wire, making its overall mass production cost superior to the pure copper wire solution. 2. Power terminal soldering uses ultrasonic cold-pressing instead of tin soldering, avoiding the use of solder pads or other tin soldering intermediate layers. This eliminates the cyclic thermal stress caused by the difference in thermal expansion coefficients of multiple materials, reducing the risk of power terminal detachment and poor soldering failure under long-term temperature cycling conditions, and extending service life. 3. Signal terminals are integrated into the module housing, replacing the solution of soldering signal terminals to small DBCs. This eliminates the need for independent small DBC layouts, relying solely on a single DBC to complete all power and signal wiring, thereby eliminating the risk of copper-ceramic delamination in small DBCs. 4. Compared to traditional processes, eliminating one high-temperature soldering and cleaning step reduces production energy consumption and wastewater discharge. It also reduces excessive growth of metal compounds on the back of the chip. Since the IMC layer is brittle and has high resistance, excessive thickness can lead to interface cracking and increased contact resistance. Reducing excessive growth of metal compounds on the back of the chip improves the reliability of IGBT devices. 5. Using a single-wafer DBC eliminates the motherboard cutting step, avoiding defects such as cracks and metal scratches in the DBC, thus improving production line yield. Attached Figure Description

[0016] Figure 1 This is a cross-sectional view of the aluminum-clad copper wire in the packaging method of the 62mm IGBT power module described in this embodiment of the invention; Figure 2 This is a schematic diagram of the bonding structure between the DBC and the signal terminals built into the housing in the packaging method of the 62mm IGBT power module described in this embodiment of the invention. Figure 3 This is a schematic diagram of the outer casing structure in the packaging method of the 62mm IGBT power module according to an embodiment of the present invention.

[0017] The components are: 1-outer shell; 2-signal terminal; 3-copper inner core; 4-aluminum cladding layer. Detailed Implementation

[0018] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0019] A first aspect of this invention provides a packaging method for a 62mm IGBT power module, comprising the following steps: S1. A single-chip DBC is used to solder the chip onto the DBC; S2. Solder the DBC with the chip soldered on to the base plate; S3. Fix the outer casing to the base plate; the outer casing includes an outer casing body and signal terminals; the signal terminals are built into the outer casing body, and both ends of the signal terminals are located outside the outer casing body; S4. Perform wire bonding and power terminal soldering; the wire bonding includes bonding between signal terminals and DBC and bonding between copper layers of different power sub-units inside DBC; the bonding between signal terminals and DBC uses aluminum-clad copper wire; the bonding between copper layers of different power sub-units inside DBC uses aluminum-clad copper wire; the power terminal soldering uses ultrasonic cold pressing soldering. S5. Fill the housing with insulating silicone, then install the top cover to complete the encapsulation of the IGBT power module.

[0020] The packaging method of the 62mm IGBT power module of the present invention is as follows: 1. The bonding between the signal terminals and the DBC, and the bonding between the copper layers of different power sub-units inside the DBC, adopt aluminum-clad copper wire. Compared with pure aluminum wire, the resistivity of the copper core inside the aluminum-clad copper wire is only 60% of that of aluminum, which can reduce the DC resistance of the signal circuit by more than 35%, and significantly reduce the transmission loss of the drive signal; while the thermal conductivity of the copper core is 1.8 times that of aluminum, which improves the heat dissipation efficiency of the signal area and reduces the steady-state junction temperature of the module by 2~5℃; and the tensile and creep resistance of the copper core is far superior to that of pure aluminum. After 1000 power cycles, there is no slippage or breakage of the leads, and the contact resistance drift can be controlled within 8%, which is far better than the drift of more than 30% of pure aluminum wire, and can effectively suppress gate oscillation and temperature measurement distortion. Compared to pure copper wire, aluminum-clad copper wire has an outer aluminum layer that isolates it from air, eliminating the risk of oxidation during storage at room temperature before encapsulation. It also eliminates the need for a high-purity nitrogen-sealed bonding cavity, resulting in lower equipment modification costs. The outer aluminum layer is soft, reducing the impact of ultrasonic bonding and preventing scratches on the thin metallized layer of the DBC. This also reduces cutter wear and significantly lowers material costs. Furthermore, the unit price of aluminum-clad copper raw materials is lower than that of high-purity bare copper wire, making its overall mass production cost superior to the pure copper wire solution. 2. Power terminal soldering uses ultrasonic cold-pressing instead of tin soldering, avoiding the use of solder pads or other tin soldering intermediate layers. This eliminates the cyclic thermal stress caused by the difference in thermal expansion coefficients of multiple materials, reducing the risk of power terminal detachment and poor soldering failure under long-term temperature cycling conditions, and extending service life. 3. Signal terminals are integrated into the module housing, replacing the solution of soldering signal terminals to small DBCs. This eliminates the need for independent small DBC layouts, relying solely on a single DBC to complete all power and signal wiring, thereby eliminating the risk of copper-ceramic delamination in small DBCs. 4. Compared to traditional processes, eliminating one high-temperature soldering and cleaning step reduces production energy consumption and wastewater discharge. It also reduces excessive growth of metal compounds on the back of the chip. Since the IMC layer is brittle and has high resistance, excessive thickness can lead to interface cracking and increased contact resistance. Reducing excessive growth of metal compounds on the back of the chip improves the reliability of IGBT devices. 5. Using a single-wafer DBC eliminates the motherboard cutting step, avoiding defects such as cracks and metal scratches in the DBC, thus improving production line yield.

[0021] Preferably, the aluminum-clad copper wire comprises a copper core and an aluminum cladding layer; the aluminum cladding layer covers the outer layer of the copper core; the bus diameter of the aluminum-clad copper wire is 15~25μm, and the thickness of the aluminum cladding layer accounts for 10%~15% of the total diameter. When the bus diameter of the aluminum-clad copper wire is not within the above range, the stress caused by thermal expansion between the chip and the DBC is too large, and the bonding solder joint is prone to fatigue cracking. When the thickness of the aluminum cladding layer is within the above range, the copper core will not penetrate the aluminum layer to directly contact the chip aluminum pads after bonding, and the aluminum layer will not be too thick, so as not to lose too much of the conductive cross-sectional area of ​​the copper core.

[0022] Preferably, the bonding process conditions between the signal terminal and the DBC are: ultrasonic power of 50~80mW; bonding pressure of 35~65g; and bonding time of 12~28ms.

[0023] Preferably, the bonding process conditions between the copper layers of different power sub-units inside the DBC are: ultrasonic power of 50~80mW; bonding pressure of 35~65g; and bonding time of 12~28ms.

[0024] Preferably, the ultrasonic cold-press welding process conditions for the power terminals are: welding pressure of 280~350N; welding amplitude of 60%~80%; deformation of 25%~50% of the power terminal; ultrasonic frequency of 20 kHz; and welding time of 0.1~10s. Here, welding amplitude refers to the percentage of the longitudinal vibration amplitude of the ultrasonic welding head reaching its maximum stroke.

[0025] Preferably, the wire bonding further includes bonding between chips and bonding between the chip emitter and the DBC power copper layer; the bonding between chips and / or the bonding between the chip emitter and the DBC power copper layer uses aluminum wire. The chip emitter and power main circuit interconnects retain pure aluminum wire, which balances cost and high current carrying capacity requirements.

[0026] Preferably, the signal terminal is made of copper; the portion of the signal terminal located on the outside of the housing body is plated with a nickel layer. This improves oxidation resistance and bonding strength.

[0027] Preferably, soldering the chip onto the DBC specifically includes the following steps: Set solder pads on the DBC; then set IGBTs and FRDs on the solder pads; perform vacuum reflow soldering on the DBC after setting IGBTs and FRDs, and check the solder void rate by X-ray inspection to ensure it is ≤3%.

[0028] Preferably, soldering the DBC with the chip soldered on to the base plate specifically includes the following steps: Set solder pads on the base plate; then set DBCs on the solder pads; solder the base plate after setting DBCs, and inspect the individual void rate (≤2%) and the overall void rate (≤5%) by X-ray inspection.

[0029] Preferably, when bonding the signal terminals to the DBC and / or bonding the copper layers of different power sub-units within the DBC, the arch height of the aluminum-clad copper wire is controlled to be 1~10mm; the span of the aluminum-clad copper wire is controlled to be 1~30mm. Controlling the arch height and span of the aluminum-clad copper wire can alleviate the alternating stress caused by the thermal expansion mismatch between the copper core and the ceramic DBC.

[0030] A second aspect of the present invention provides a 62mm IGBT power module obtained by the above-described packaging method for a 62mm IGBT power module.

[0031] Example 1 This embodiment of a packaging method for a 62mm IGBT power module includes the following steps: 1. Use a single-chip DBC and mark the DBC with a QR code.

[0032] 2. Mount solder pads corresponding to the IGBT and FRD sizes on a single DBC chip, and then set the IGBT and FRD on the corresponding solder pads; perform vacuum reflow soldering on the DBC after setting the IGBT and FRD, and inspect the solder void rate by X-ray to ensure it is ≤3%.

[0033] 3. Set solder pads on the copper base plate, then set DBCs on the solder pads, solder the base plate after setting DBCs, and inspect the individual void rate (≤2%) and the overall void rate (≤5%) by X-ray inspection.

[0034] 4. Secure the outer casing to the base plate; such as Figure 3 As shown, the housing includes a housing body 1 and signal terminals 2. The signal terminals 2 are built into the housing body 1, and both ends of the signal terminals 2 are located outside the housing body 1. The signal terminals are made of copper, and the outer surface of the signal terminals is plated with a nickel layer. Sealant is applied to the inner wall of the housing, and after placing copper retaining rings, a press is used to press them together, achieving gapless fixation between the DBC substrate and the housing.

[0035] 5. Perform wire bonding and power terminal soldering, using partitioned dual-wire bonding. Bonding between signal terminals and DBC5, and between copper layers of different power sub-units within the DBC, uses aluminum-clad copper wire. Bonding between chips, and between the chip emitter and the DBC power copper layer, uses aluminum wire. Power terminal soldering employs ultrasonic cold-pressing. For example... Figure 1 As shown, the aluminum-clad copper wire includes a copper core 3 and an aluminum cladding layer 4 (as shown). Figure 1 (As shown); the aluminum cladding layer 4 covers the outer layer of the copper core 3; the main diameter of the aluminum-clad copper wire is 15μm, and the thickness of the aluminum cladding layer accounts for 12% of the total diameter. The aluminum wire diameter is 15μm.

[0036] Bonding between signal terminals and DBC ( Figure 2The bonding process conditions for the bonding between copper layers of different power sub-units within the DBC, the bonding between chips, and the bonding between the chip emitter and the DBC power copper layer are as follows: ultrasonic power of 60mW; bonding pressure of 50g; and bonding time of 20ms. The bonding atmosphere does not require a high-purity nitrogen-sealed chamber; a normal pressure, low-oxygen environment (oxygen content ≤50ppm) is sufficient, significantly reducing equipment investment. For bonding between signal terminals and the DBC, and between copper layers of different power sub-units within the DBC, the arch height of the aluminum-clad copper wire is controlled at 5mm; the span of the aluminum-clad copper wire is 10mm. The ultrasonic cold-press welding process conditions for the power terminals are: welding pressure of 320N; welding amplitude of 70%; deformation of 30% of the power terminal; ultrasonic frequency of 20 kHz; and welding time of 3s.

[0037] 6. Fill the housing with insulating silicone, then install the top cover and lock the pin nut to complete the encapsulation of the IGBT power module.

[0038] 7. Perform full electrical performance testing on conduction resistance, gate signal, high voltage insulation, and temperature measurement accuracy.

[0039] Example 2 The packaging method of the 62mm IGBT power module in this embodiment is the same as that in Embodiment 1, except that the bus diameter of the aluminum-clad copper wire is 15μm and the thickness of the aluminum cladding layer accounts for 15% of the total diameter.

[0040] Example 3 The packaging method of the 62mm IGBT power module in this embodiment is the same as that in Embodiment 1, except that the bus diameter of the aluminum-clad copper wire is 15μm and the thickness of the aluminum cladding layer accounts for 10% of the total diameter.

[0041] Multiple experiments revealed that when the diameter of the aluminum-clad copper wire is not within the range of 15~25μm, the probability of fatigue cracking of the bonding joint increases significantly, resulting in a decrease in product yield. When the percentage of aluminum cladding thickness to total diameter is less than 10%, the probability of the copper core penetrating the aluminum layer and directly contacting the chip's aluminum pads after bonding increases, while when it exceeds 15%, excessive loss of the copper core's conductive cross-sectional area occurs.

[0042] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A packaging method for a 62mm IGBT power module, characterized in that, Includes the following steps: S1. A single-chip DBC is used to solder the chip onto the DBC; S2. Solder the DBC with the chip soldered on to the base plate; S3. Fix the outer casing to the base plate; the outer casing includes an outer casing body and signal terminals; the signal terminals are built into the outer casing body, and both ends of the signal terminals are located outside the outer casing body; S4. Perform wire bonding and power terminal soldering; the wire bonding includes bonding between signal terminals and the DBC and bonding between copper layers of different power sub-units within the DBC; the bonding between signal terminals and the DBC uses aluminum-clad copper wire; the bonding between copper layers of different power sub-units within the DBC uses aluminum-clad copper wire; the aluminum-clad copper wire includes a copper core and an aluminum cladding layer; the aluminum cladding layer covers the outer layer of the copper core; the bus diameter of the aluminum-clad copper wire is 15~25μm, and the thickness of the aluminum cladding layer accounts for 10%~15% of the total diameter; the power terminal soldering uses ultrasonic cold pressing soldering; the process conditions for ultrasonic cold pressing soldering of the power terminals are: soldering pressure of 280~350N; soldering amplitude of 60%~80%; deformation of 25%~50% of the power terminal; ultrasonic frequency of 20 kHz; welding time is 0.1~10s; the wire bonding also includes bonding between chips and bonding between the chip emitter and the DBC power copper layer; the bonding between chips and / or the bonding between the chip emitter and the DBC power copper layer uses aluminum wire; S5. Fill the housing with insulating silicone, then install the top cover to complete the encapsulation of the IGBT power module.

2. The packaging method for a 62mm IGBT power module according to claim 1, characterized in that, The process conditions for bonding between signal terminals and the DBC and / or bonding between copper layers of different power sub-units within the DBC are as follows: The ultrasonic power is 50~80mW; the bonding pressure is 35~65g; and the bonding time is 12~28ms.

3. The packaging method for a 62mm IGBT power module according to claim 1, characterized in that: The signal terminal is made of copper; the portion of the signal terminal located on the outside of the housing body is plated with a nickel layer.

4. The packaging method for a 62mm IGBT power module according to claim 1, characterized in that, Soldering the chip onto the DBC specifically includes the following steps: Set solder pads on the DBC; then set IGBTs and FRDs on the solder pads; perform vacuum reflow soldering on the DBC after setting IGBTs and FRDs, and check the solder void rate by X-ray inspection to ensure it is ≤3%.

5. The packaging method for a 62mm IGBT power module according to claim 1, characterized in that, Soldering the DBC with the chip attached to the base plate specifically includes the following steps: Set solder pads on the base plate; then set DBCs on the solder pads; solder the base plate after setting DBCs, and inspect the individual void rate (≤2%) and the overall void rate (≤5%) by X-ray inspection.

6. The packaging method for a 62mm IGBT power module according to claim 1, characterized in that: When bonding between signal terminals and DBC and / or between copper layers of different power sub-units within DBC, the arch height of the aluminum-clad copper wire is controlled to be 1~10mm; the span of the aluminum-clad copper wire is controlled to be 1~30mm.

7. A 62mm IGBT power module obtained by the packaging method of a 62mm IGBT power module as described in any one of claims 1-6.

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