A multi-source commutation converter valve tower and arrangement method

Abstract

The embodiment of the specification provides a multi-source commutation converter valve tower and a layout method, wherein the multi-source commutation converter valve tower comprises a thyristor converter valve tower and an IGBT converter valve tower; the thyristor converter valve tower and the IGBT converter valve tower are arranged in a layered integrated manner, the IGBT converter valve tower is arranged below the thyristor converter valve tower, and the thyristor converter valve tower and the IGBT converter valve tower are connected through a support insulator; the thyristor converter valve tower is a double tower, and each single valve of the thyristor converter valve tower is arranged horizontally; and the IGBT converter valve tower is a modular cascaded structure, and the IGBT converter valve tower is arranged in layers. Compared with the scheme in the prior art that the thyristor valve tower adopts a suspension type structure, the IGBT valve tower adopts a support type structure, and the two are arranged in a staggered manner, the land occupation area of the valve hall is effectively saved, and the engineering cost is reduced.

Description

Technical Field

[0001] The embodiments in this specification relate to the field of high voltage direct current transmission technology, and in particular to a multi-source commutation converter valve tower and its arrangement method. Background Technology

[0002] The core technology of high-voltage direct current (HVDC) transmission lies in the converter station equipment. In HVDC transmission projects, the converter station realizes the conversion of DC and AC energy, and the converter valve is the core equipment for this energy conversion. The multi-source phase-commutation converter valve is a new type of converter valve that combines the advantages of thyristor converter valves and IGBT (Insulated Gate Bipolar Transistor) converter valves, making it suitable for large-scale renewable energy aggregation and transmission scenarios.

[0003] The multi-source commutation converter valve includes a thyristor converter valve and an SVF reactive power compensation filter. The reactive power compensation filter is composed of a chain-type full-bridge submodule and uses fully controlled IGBT devices (IGBT converter valves). The thyristor converter valve is responsible for the transmission of active power, while the IGBT converter valve is responsible for filtering out harmonics generated by the thyristor valve and compensating for the reactive power it consumes.

[0004] Due to the significant differences in weight and structure between thyristor converter valves and IGBT converter valves, the lighter thyristor converter valves typically employ a suspended structure, while the heavier IGBT converter valves adopt a supported structure. When both are arranged in the same valve chamber, they are usually staggered, resulting in a larger valve chamber area and higher engineering costs. Summary of the Invention

[0005] In view of this, embodiments of this specification provide a multi-source commutation converter valve tower. One or more embodiments of this specification also relate to an arrangement method for a multi-source commutation converter valve tower, to address the technical deficiencies existing in the prior art.

[0006] According to a first aspect of the embodiments of this specification, a multi-source commutation converter valve tower is provided, comprising: Thyristor converter valve tower and IGBT converter valve tower; The thyristor converter valve tower and the IGBT converter valve tower are arranged in a layered integrated manner. The IGBT converter valve tower is arranged below the thyristor converter valve tower. The thyristor converter valve tower and the IGBT converter valve tower are connected by a support insulator. The thyristor converter valve tower is a double valve tower, and the individual valves of the thyristor converter valve tower are arranged horizontally. The IGBT converter valve tower has a modular cascaded structure, and the IGBT converter valve tower is arranged in layers.

[0007] In one possible implementation, the valve assembly of the thyristor converter valve tower is arranged in a left-right spiral configuration, with each individual valve arranged on the same horizontal layer.

[0008] In one possible implementation, the inlet of the thyristor converter valve tower is located on the converter transformer side, the high-voltage DC side is located at the tail of the second layer, and the low-voltage DC side is located at the tail of the first layer.

[0009] In one possible implementation, the IGBT converter valve tower is composed of multiple valve assemblies connected in series, with each layer of valve assemblies arranged in a left-right series configuration, and the valve layer potential gradually decreasing from top to bottom.

[0010] In one possible implementation, the high-potential layer of the IGBT converter valve tower is located above the IGBT converter valve tower and adjacent to the layer where the thyristor converter valve tower is located.

[0011] In one possible implementation, the input terminals of the thyristor converter valve tower are arranged adjacent to the input terminals of the IGBT converter valve tower.

[0012] In one possible implementation, the length of the post insulator is determined by the insulation level of the multi-source commutation valve structure; The thyristor converter valve tower and the IGBT converter valve tower are both constructed using a supported valve tower structure.

[0013] According to a second aspect of the embodiments of this specification, a method for arranging a multi-source commutation converter valve tower is provided, comprising: The valve tower of the multi-source commutation converter valve structure is arranged with the inlet side facing the converter transformer, and the outlet side is uniformly arranged at the tail end of the valve tower. The DC-side terminals of the thyristor converter valve tower are connected via a busbar to form a six-pulse valve; The IGBT converter valve tower has its wiring output at the bottom, and a supported busbar structure is adopted. The bottom outgoing wires of the IGBT converter valve tower are connected in a star or delta configuration via a reactor.

[0014] In one possible implementation, the high-voltage DC terminal and the low-voltage DC terminal of the thyristor converter valve tower are horizontally connected via a busbar.

[0015] In one possible implementation, the bottom outgoing line of the IGBT converter valve tower passes through the bridge arm reactor, and the three phases converge at one point to form a star connection.

[0016] One embodiment of this specification implements a layered integrated design based on the structural characteristics of the thyristor valve tower and the IGBT valve tower. The overall valve tower structure is supported. Compared with the existing technology where the thyristor valve tower adopts a suspended structure and the IGBT valve tower adopts a supported structure with the two staggered, this design effectively saves the valve hall floor space and reduces the project cost.

[0017] One embodiment of this specification implements a thyristor valve tower assembly arranged in a left-right spiral configuration, with each valve tower arranged on the same horizontal layer. The low-voltage DC terminal is located at the tail end of the upper valve tower, and the high-voltage DC terminal is located at the tail end of the lower valve tower, resulting in a compact thyristor valve tower structure and a reasonable potential distribution.

[0018] One embodiment of this specification places the high potential of the IGBT converter valve tower on the upper layer of the supported valve tower, adjacent to the valve layer where the high potential of the thyristor converter valve tower is located. This facilitates the incoming line of the converter transformer and simplifies the arrangement of the incoming line of the converter transformer in the valve hall.

[0019] In summary, this invention can be widely applied in the field of high-voltage direct current transmission technology. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a multi-source commutation valve tower provided in one embodiment of this specification; Figure 2 This is a schematic diagram of the thyristor valve tower assembly arrangement of a multi-source commutation valve tower according to one embodiment of this specification; Figure 3 This is a schematic diagram of the IGBT valve tower assembly arrangement of a multi-source commutation valve tower according to one embodiment of this specification; Figure 4 This is a front view of a schematic diagram of a six-pulse unit multi-source commutator arrangement for a multi-source commutator valve tower arrangement method provided in one embodiment of this specification. Figure 5 This is a side view of a schematic diagram of a six-pulse unit multi-source commutator arrangement for a multi-source commutator valve tower arrangement method provided in one embodiment of this specification. The labels in the attached diagram represent: 1. IGBT converter valve tower; 2. IGBT converter valve tower support insulator; 3. Thyristor converter valve tower; 4. Thyristor converter valve tower support insulator. Detailed Implementation

[0021] Many specific details are set forth in the following description to provide a full understanding of this specification. However, this specification can be implemented in many other ways than those described herein, and those skilled in the art can make similar extensions without departing from the spirit of this specification. Therefore, this specification is not limited to the specific implementations disclosed below.

[0022] The terminology used in one or more embodiments of this specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the one or more embodiments of this specification. The singular forms “a” and “the” as used in one or more embodiments of this specification and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in one or more embodiments of this specification refers to and includes any or all possible combinations of one or more associated listed items.

[0023] It should be understood that although the terms first, second, etc., may be used to describe various information in one or more embodiments of this specification, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, first may also be referred to as second without departing from the scope of one or more embodiments of this specification, and similarly, second may also be referred to as first. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to a determination."

[0024] This specification provides a multi-source commutation valve tower and also relates to a method for arranging the multi-source commutation valve tower, which will be described in detail in the following embodiments.

[0025] See Figure 1 , Figure 1 A schematic diagram of a multi-source commutation valve tower according to an embodiment of this specification is shown. The multi-source commutation valve tower includes: IGBT commutation valve tower 1, IGBT commutation valve tower support insulator 2, thyristor commutation valve tower 3, and thyristor commutation valve tower support insulator 4.

[0026] In some embodiments, the thyristor converter valve tower 3 and the IGBT converter valve tower 1 are designed as a single, layered unit, employing a supported valve tower structure. Because the IGBT converter valve tower 1 is heavier, it is positioned at the bottom of the multi-source commutation valve tower using a supported structure; the thyristor converter valve tower 3 is lighter and positioned at the top of the multi-source commutation valve tower. This integrated, supported structure, compared to the traditional suspended thyristor valve tower and supported IGBT valve tower staggered arrangement, effectively saves valve hall floor space and reduces project costs.

[0027] In some embodiments, the thyristor converter valve tower 3 is a double valve tower, with each individual valve in the thyristor converter valve tower 3 arranged horizontally. Specifically, the thyristor converter valve tower 3 is composed of multiple valve assemblies connected in series and arranged horizontally. The valve assemblies of the thyristor converter valve tower 3 are arranged in a left-right helical manner, with each individual valve arranged on the same horizontal layer. This left-right helical arrangement allows for a more compact structure of the thyristor converter valve tower 3, reducing the floor space occupied by the valve tower.

[0028] In some embodiments, such as Figure 2 As shown, the thyristor converter valve tower 3 is a double valve tower. The inlet end is located on the converter transformer side. The internal components of the valve layer are arranged in a left-right spiral pattern. The DC high-voltage end is located at the end of the second layer, and the DC low-voltage end is located at the end of the first layer. Specifically, the thyristor converter valve tower 3 includes two layers, with one single valve arranged in each layer. Two single valves are connected in series to form a double valve. The DC low-voltage end of the first layer is located at the end of the first layer, and the DC high-voltage end of the second layer is located at the end of the second layer. The valve components are compactly arranged through a left-right spiral pattern. In some embodiments, the IGBT converter valve tower 1 is a modular cascaded structure, with the IGBT converter valve tower 1 arranged in layers. Specifically, the IGBT converter valve tower 1 is composed of multiple valve components connected in series, with each layer of valve components arranged in a left-right series configuration, and the valve layer potential gradually decreasing from top to bottom.

[0029] In some embodiments, such as Figure 3 As shown, the IGBT converter valve tower 1 is arranged in layers, with the incoming line located on the converter transformer side. The components between the valve layers are spirally arranged from top to bottom, with the lowest potential point located at the tail of the tower. The high-potential layer of the IGBT converter valve tower 1 is located on the upper layer and adjacent to the layer containing the thyristor converter valve tower 3, facilitating the incoming line to the converter transformer. By placing the high-potential layer on the upper layer and adjacent to the thyristor converter valve tower 3, the distance of the converter transformer's incoming line can be shortened, simplifying the wiring.

[0030] In some embodiments, the input terminals of the thyristor converter valve tower 3 and the input terminals of the IGBT converter valve tower 1 are arranged adjacent to each other, which facilitates the arrangement of the converter transformer input and simplifies the wiring in the valve hall. By arranging the input terminals of the two valve towers adjacent to each other, the output lines of the converter transformer can be shared, reducing the bus length in the valve hall.

[0031] In some embodiments, the length of the thyristor converter valve tower support insulator 4 between the thyristor converter valve tower 3 and the IGBT converter valve tower 1 is determined by the insulation level of the multi-source commutation converter valve structure. Specifically, a suitable length of the thyristor converter valve tower support insulator 4 is selected based on the voltage difference between the thyristor converter valve tower 3 and the IGBT converter valve tower 1 to ensure insulation reliability. The thyristor converter valve tower support insulator 4 serves both as insulation and as support for the thyristor converter valve tower 3, transferring the weight of the thyristor converter valve tower 3 to the IGBT converter valve tower 1 and its foundation.

[0032] It should be noted that the multi-source commutation valve tower in this embodiment is designed in a layered integrated manner based on the structural characteristics of the thyristor converter valve tower 3 and the IGBT converter valve tower 1. The overall structure adopts a supported valve tower structure, which effectively saves the valve hall floor space and reduces the project cost. The valve components of the thyristor converter valve tower 3 are arranged in a left-right spiral manner, with each valve tower arranged on the same horizontal layer, resulting in a compact structure. The IGBT converter valve tower 1 is arranged in layers, with the valve components in each layer arranged in a left-right series configuration. The valve layer potential gradually decreases, facilitating insulation coordination. The thyristor converter valve tower 3 and the IGBT converter valve tower 1 are connected by thyristor converter valve tower support insulators 4. The length of the support insulators is determined by the insulation level to ensure insulation reliability. The high potential of the IGBT converter valve tower 1 is located on the upper layer of the supported valve tower, adjacent to the layer where the thyristor converter valve tower 3 is located, facilitating the incoming line of the converter transformer.

[0033] The following is in conjunction with the appendix Figure 4 , Figure 5 Taking the application of a multi-source commutation valve tower arrangement method provided in this specification in a six-pulse multi-source commutation valve as an example, the arrangement method of the multi-source commutation valve tower will be further explained. Among them, Figure 4 This diagram shows a front view of a six-pulse unit multi-source commutator arrangement schematic of a multi-source commutator valve tower arrangement method according to an embodiment of this specification. Figure 5 The diagram shows a side view of a six-pulse unit multi-source commutator arrangement schematic diagram of a multi-source commutator valve tower arrangement method provided in one embodiment of this specification, which specifically includes the following steps.

[0034] Step one involves arranging the incoming side of the multi-source commutation converter valve tower towards the converter transformer, while the outgoing side is uniformly arranged at the tail end of the valve tower. Specifically, the ABC three-phase valve towers are arranged horizontally, with the first end of the valve tower located at the converter transformer bushing (incoming line). By arranging the incoming side of the valve tower towards the converter transformer, the length of the connecting busbar between the converter transformer and the valve tower can be shortened, simplifying the wiring within the valve hall.

[0035] Step two: Connect the DC-side terminals of the thyristor converter valve tower 3 via a busbar to form a six-pulse valve. Specifically, the high-voltage DC terminals and low-voltage DC terminals of the thyristor converter valve tower 3 are horizontally connected via a busbar to form a six-pulse valve. The busbar has advantages such as large current carrying capacity, high mechanical strength, and convenient installation, and is suitable for the DC-side connection of the thyristor converter valve tower 3.

[0036] Step 3: The IGBT converter valve tower 1 is routed out at the bottom using a support busbar. Since the IGBT converter valve tower 1 is located at the bottom, bottom routing facilitates wiring, and the support busbar can support the weight of the IGBT converter valve tower 1 while ensuring the mechanical stability of the busbar.

[0037] Step four: Connect the bottom outgoing lines of IGBT converter valve tower 1 to either a star or delta connection via reactors. Specifically, after passing through the bridge arm reactor, the three phases (A, B, and C) of the bottom outgoing lines of IGBT converter valve tower 1 converge at a single point, forming a star connection. The bridge arm reactor limits harmonic currents, improving the power quality of the system. In other embodiments, the bottom outgoing lines of IGBT converter valve tower 1 can also be connected to a delta connection via reactors to adapt to different system requirements.

[0038] It should be noted that the arrangement method of the multi-source commutation converter valve tower in this embodiment simplifies the wiring in the valve hall by arranging the valve tower's inlet side towards the converter transformer and uniformly arranging the outlet side at the tail end of the valve tower; by connecting the DC side terminals of the thyristor converter valve tower 3 through a busbar to form a six-pulse valve, the active power transmission function of the thyristor converter valve tower 3 is realized; by using a support busbar at the bottom outlet of the IGBT converter valve tower 1, wiring is convenient and the weight of the IGBT converter valve tower 1 can be supported; by connecting the bottom outlet of the IGBT converter valve tower 1 through a reactor to form a star or delta connection, the harmonic filtering and reactive power compensation functions of the IGBT converter valve tower 1 are realized.

[0039] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments in this specification are not limited to the described order of actions, because according to the embodiments in this specification, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in this specification are all preferred embodiments, and the actions and modules involved are not necessarily essential to the embodiments in this specification.

[0040] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0041] The preferred embodiments disclosed above are merely illustrative of this specification. The optional embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the embodiments described herein. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the embodiments, thereby enabling those skilled in the art to better understand and utilize this specification. This specification is limited only by the claims and their full scope and equivalents.

Claims

1. A multi-source commutation valve tower, characterized in that, include: Thyristor converter valve tower and IGBT converter valve tower; The thyristor converter valve tower and the IGBT converter valve tower are arranged in a layered integrated manner. The IGBT converter valve tower is arranged below the thyristor converter valve tower. The thyristor converter valve tower and the IGBT converter valve tower are connected by a support insulator. The thyristor converter valve tower is a double valve tower, and the individual valves of the thyristor converter valve tower are arranged horizontally. The IGBT converter valve tower has a modular cascaded structure, and the IGBT converter valve tower is arranged in layers. The thyristor converter valve tower and the IGBT converter valve tower are both constructed using a supported valve tower structure.

2. The multi-source commutation converter valve tower according to claim 1, characterized in that, The valve assembly of the thyristor converter valve tower adopts a left-right spiral arrangement, with each single valve arranged on the same horizontal layer.

3. The multi-source commutation valve tower according to claim 2, characterized in that, The incoming end of the thyristor converter valve tower is located on the converter transformer side, the high voltage end of the DC side is located at the tail of the second layer, and the low voltage end of the DC side is located at the tail of the first layer.

4. The multi-source commutation valve tower according to claim 1, characterized in that, The IGBT converter valve tower is composed of multiple valve assemblies connected in series. Each layer of valve assemblies is arranged in a left-right series configuration, and the valve layer potential gradually decreases from top to bottom.

5. The multi-source commutation valve tower according to claim 4, characterized in that, The high-potential layer of the IGBT converter valve tower is located on the upper layer of the IGBT converter valve tower and is adjacent to the layer where the thyristor converter valve tower is located.

6. The multi-source commutation converter valve tower according to claim 1, characterized in that, The input terminals of the thyristor converter valve tower are arranged adjacent to the input terminals of the IGBT converter valve tower.

7. The multi-source commutation converter valve tower according to claim 1, characterized in that, The length of the post insulator is determined by the insulation level of the multi-source commutation valve structure.

8. A method for arranging a multi-source commutation converter valve tower, characterized in that, Applied to a multi-source commutation converter tower as described in any one of claims 1 to 7, the method comprises: The valve tower of the multi-source commutation converter valve structure is arranged with the inlet side facing the converter transformer, and the outlet side is uniformly arranged at the tail end of the valve tower. The DC-side terminals of the thyristor converter valve tower are connected via a busbar to form a six-pulse valve; The IGBT converter valve tower has its wiring output at the bottom, and a supported busbar structure is adopted. The bottom outgoing wires of the IGBT converter valve tower are connected in a star or delta configuration via a reactor.

9. The method according to claim 8, characterized in that, The high-voltage DC terminal and low-voltage DC terminal of the thyristor converter valve tower are horizontally connected via a busbar.

10. The method according to claim 8, characterized in that, The bottom outgoing line of the IGBT converter valve tower passes through the bridge arm reactor, and the three phases converge at one point to form a star connection.

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