Inspection apparatus and method of inspection

Abstract

An inspection apparatus and a method of inspection are disclosed. The inspection apparatus includes a transfer chamber; a transfer actuator; a plurality of lift pins disposed below the transfer actuator, the plurality of lift pins supporting a substrate, and the plurality of lift pins spaced apart from the transfer actuator; a plurality of auxiliary pins disposed below the transfer actuator, the plurality of auxiliary pins supporting the substrate in a second direction, the plurality of auxiliary pins surrounding a test element of the substrate in a plan view, and the plurality of auxiliary pins disposed symmetrically about the test element; and a thickness sensor including a plurality of probes, the plurality of probes disposed at a side of the transfer chamber and measuring a thickness of a film deposited on the test element of the substrate.

Description

Technical Field

[0001] This disclosure relates to inspection, and more specifically, to inspection equipment, methods of inspection using inspection equipment, and electronic devices inspected by inspection equipment. Background Technology

[0002] In the manufacturing process of display devices, transistor layers can be formed on a substrate using various film formation and etching processes. An organic light-emitting layer, comprising a lower electrode, an organic film layer (e.g., a hole transport layer, a light-emitting layer, and an electron transport layer), and an upper electrode, can then be formed on the transistor layer. Subsequently, the display device can be completed by encapsulating the substrate on which the transistor layer and organic light-emitting layer are formed using an encapsulation film.

[0003] After the encapsulation film is used to encapsulate the display device substrate, an inspection step can be performed to determine whether the encapsulation film has been deposited to the predetermined thickness. However, if the display device is supported by a lifting pin during the inspection, sagging may occur within the display device, which could reduce the reliability of the encapsulation film thickness measurement. Summary of the Invention

[0004] An inspection apparatus includes: a transfer chamber through which a substrate is transferred, the substrate including a test element and a thin film deposited on an upper surface of the test element; a transfer actuator disposed in the transfer chamber and configured to transfer the substrate in a first direction; a plurality of lifting pins disposed below the transfer actuator in a cross-sectional view, the plurality of lifting pins being configured to support the substrate in a second direction intersecting the first direction, and the plurality of lifting pins being spaced apart from the transfer actuator in a plan view; a plurality of auxiliary pins disposed below the transfer actuator in a cross-sectional view, the plurality of auxiliary pins being configured to support the substrate in the second direction, the plurality of auxiliary pins surrounding the test element of the substrate in a plan view, and the plurality of auxiliary pins being symmetrically arranged about the test element; and a thickness sensor including a plurality of probes disposed on one side of the transfer chamber and configured to measure the thickness of the thin film deposited on the test element of the substrate.

[0005] Each of the multiple auxiliary pins can be spaced from the test element by a distance ranging from approximately 20 mm to approximately 80 mm in a plan view.

[0006] The auxiliary pin can be spaced apart from the transmission actuator in the plan view.

[0007] The number of auxiliary pins can range from 4 to 80.

[0008] The test element may include a first test element and a second test element spaced apart from the first test element in a plan view, and the auxiliary pin may include a first auxiliary pin symmetrically arranged with respect to the first test element and a second auxiliary pin symmetrically arranged with respect to the second test element.

[0009] The number of each of the first and second auxiliary pins can be in the range of 4 to 8.

[0010] The inspection equipment may also include a first processing chamber located on one side of the transfer chamber and a second processing chamber located on the other side of the transfer chamber.

[0011] The first processing chamber may be a processing chamber configured for depositing inorganic membranes, and the second processing chamber may be a processing chamber configured for depositing organic membranes.

[0012] Thickness sensors can be configured to measure the thickness of inorganic or organic films.

[0013] The number of test elements can range from 1 to 10, and the probes of the thickness sensor can correspond one-to-one with the test elements of the substrate.

[0014] The thickness sensor can be configured to project light through a probe.

[0015] The inspection method according to embodiments of the present disclosure includes: depositing a thin film on a substrate including a test element in a first processing chamber; conveying the substrate into a transfer chamber via a transfer actuator; lifting the substrate using a plurality of lifting pins spaced apart from the transfer actuator in a plan view and a plurality of auxiliary pins arranged symmetrically around and about the test element; and measuring the thickness of the thin film deposited on the test element on the substrate using a thickness sensor.

[0016] Lifting pins and auxiliary pins can be used to lift the substrate. In a plan view, each of the multiple auxiliary pins can be spaced from the test element of the substrate at a distance ranging from approximately 20 mm to approximately 80 mm.

[0017] After the base is raised using lifting pins and auxiliary pins, the angle formed between one side of the base and the horizontal reference plane can be less than or equal to about 1.5 degrees.

[0018] In measuring the thickness of thin films, thickness sensors can measure the thickness of the film by projecting light onto a test element on a substrate.

[0019] After measuring the thickness of the film, the inspection method may also include transferring the substrate to a second processing chamber when the thickness of the film is equal to a preset thickness.

[0020] After the substrate is transferred to the second processing chamber, the inspection method may also include removing the test area on which the test element on which the substrate is disposed.

[0021] The first processing chamber may be a processing chamber for depositing inorganic membranes, and the second processing chamber may be a processing chamber for depositing organic membranes.

[0022] After measuring the thickness of the film, the inspection method may further include returning the substrate to the first processing chamber when the thickness of the film differs from the preset thickness.

[0023] An electronic device includes: a display device; and a processor configured to drive the display device. An inspection device is configured to measure the display device. The inspection device includes: a transfer chamber through which a substrate is transferred, the substrate including a test element and a thin film deposited on the upper surface of the test element; a transfer actuator disposed in the transfer chamber and configured to transfer the substrate in a first direction; a plurality of lifting pins disposed below the transfer actuator in cross-section, configured to support the substrate in a second direction intersecting the first direction, and spaced apart from the transfer actuator in plan view; a plurality of auxiliary pins disposed below the transfer actuator in cross-section, configured to support the substrate in the second direction, surrounding the test element of the substrate in plan view, and symmetrically arranged about the test element; and a thickness sensor including a plurality of probes disposed on one side of the transfer chamber and configured to measure the thickness of the thin film deposited on the test element of the substrate. Attached Figure Description

[0024] A more complete understanding of this disclosure and its many accompanying aspects will be readily available when considered in conjunction with the accompanying drawings and by referring to the following detailed description, as a better understanding of this disclosure and its many accompanying aspects is gained.

[0025] Figure 1 This is a schematic diagram illustrating a substrate inspection apparatus according to an embodiment of the present disclosure.

[0026] Figure 2 It is shown Figure 1 A cross-sectional view of an embodiment of the first transfer chamber.

[0027] Figure 3 , Figure 4 and Figure 5 It is shown Figure 2 A plan view of the lifting pin, auxiliary pin, and base of the first transfer chamber.

[0028] Figure 6 yes Figure 5 An enlarged view of the first auxiliary pin area.

[0029] Figure 7 It is shown Figure 2 A cross-sectional view of an embodiment of the lifting pin and auxiliary pin supporting the base.

[0030] Figure 8 yes Figure 7 A magnified view of region A.

[0031] Figure 9 It shows including Figure 7 A cross-sectional view of an embodiment of a display panel based on a substrate.

[0032] Figure 10 It shows from Figure 9 A cross-sectional view of an embodiment where the test area has been removed from the display panel.

[0033] Figure 11 It shows the use Figure 1 A flowchart illustrating an embodiment of a method for inspecting a substrate using a substrate inspection device.

[0034] Figure 12 This is a block diagram illustrating an electronic device according to an embodiment of the present disclosure.

[0035] Figure 13 It is based on Figure 12 Schematic diagrams of electronic devices in various embodiments. Detailed Implementation

[0036] In describing embodiments of the present disclosure as illustrated in the accompanying drawings, specific terminology has been used for clarity. However, this disclosure is not necessarily intended to be limited to the specific terminology chosen so far, and it should be understood that each particular element includes all technical equivalents operating in a similar manner.

[0037] This disclosure can be modified in various ways and can take various forms, and specific embodiments are shown in the accompanying drawings and described in detail in the specification. However, this is not necessarily intended to limit this disclosure to the particular form, and it should be understood to include all modifications, equivalents, or substitutions falling within the spirit and scope of this disclosure.

[0038] Terms such as "first" and "second" can be used to describe various elements, but elements should not necessarily be limited by these terms. These terms can be used for the purpose of distinguishing one element from another. For example, without departing from the scope of this disclosure, a first element may be named a second element, and similarly, a second element may be named a first element.

[0039] When an element is said to be “connected to” another element, it should be understood that the element may be directly connected to or directly coupled to the other element, but the other element may also exist between the element and the other element. Other expressions used to describe the relationship between elements (i.e., “between” and “closely between” or “adjacent to” and “directly adjacent to”) should be interpreted in the same way.

[0040] Unless the context clearly indicates otherwise, singular expressions include plural expressions. In this application, terms such as “comprising” or “having” are intended to describe the presence of features, quantities, steps, operations, elements, components or combinations thereof, but should not necessarily be construed as excluding the possibility of the presence or addition of one or more other features, quantities, steps, operations, elements, components or combinations thereof.

[0041] Terms such as “below,” “under,” “below,” “under,” “above,” “on,” “above,” and “on top” are used to describe the relative relationships of the components shown in the accompanying drawings. These terms are relative concepts and are described based on the directions shown in the accompanying drawings.

[0042] In the following description, embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and for any element not described in detail for the purposes of this drawing, it will be understood that the element is at least similar to a corresponding element described elsewhere in this disclosure.

[0043] Embodiments of this disclosure relate to an inspection apparatus (e.g., a substrate inspection apparatus) for measuring the thickness of a thin film deposited on a substrate in a display device manufacturing process. The inspection apparatus includes: a transfer chamber (through which the substrate is moved), a transport section for transporting the substrate along a first direction, and a plurality of lifting pins and auxiliary pins supporting the substrate from below in a second direction. The auxiliary pins are symmetrically arranged with respect to one or more test elements formed on the substrate and are spaced apart from the transport section in a plan view. A measuring section located on one side of the transfer chamber includes a plurality of probes that project light toward the test elements to measure the thickness of the deposited thin film. By arranging the auxiliary pins at precise distances from the test elements, such as approximately 20 mm to 80 mm, the substrate is uniformly supported during inspection, thereby minimizing sagging or bending that could distort the thickness measurement.

[0044] This inspection device can be operated as part of an in-line inspection method that occurs between deposition processes. An inorganic or organic thin film is deposited in a first processing chamber, and the substrate is transferred to an inspection chamber for thickness measurement before entering a second processing chamber. If the measured thickness differs from a preset standard, the substrate can be returned for reprocessing, thus avoiding yield loss and wasted production time. The method involves using a combination of lifting pins and auxiliary pins to elevate the substrate, maintaining an angle within approximately 1.5 degrees (°) relative to the horizontal plane to ensure measurement accuracy. Light from the probe is reflected from the test element to achieve optical detection of the film thickness, and this result is used to control subsequent process steps.

[0045] Embodiments of this disclosure can also cover display devices and electronic devices (such as smartphones, tablets, laptops / notebooks, computer monitors, or automotive displays) inspected by the inspection equipment. By providing additional mechanical support and enabling optical measurements during the process, the inspection equipment enhances the reliability and efficiency of thin-film inspection during production. This inspection equipment allows for early detection of deposition errors, reduces the likelihood of defective panels continuing through subsequent manufacturing stages, and increases throughput. Overall, embodiments of this disclosure improve both the accuracy and cost-effectiveness of thin-film quality control for advanced display manufacturing.

[0046] Figure 1 This is a schematic diagram illustrating a substrate inspection apparatus according to an embodiment of the present disclosure.

[0047] In this specification, a plane may be defined by a first direction D1 and a third direction D3 intersecting the first direction D1. For example, the third direction D3 may be perpendicular to the first direction D1. Furthermore, a second direction D2 may be the normal direction of the plane. For example, the second direction D2 may be perpendicular to the plane formed by the first direction D1 and the third direction D3.

[0048] refer to Figure 1 The substrate inspection device SPC may include a first load locking chamber RCB1 and a second load locking chamber RCB2, a first storage chamber SCB1 and a second storage chamber SCB2, a first processing chamber PCB1, a second processing chamber PCB2 and a third processing chamber PCB3, a first transfer chamber MCB1 and a second transfer chamber MCB2, and a first thickness sensor MP1 and a second thickness sensor MP2.

[0049] Substrate SUB (see Figure 2 The substrate SUB can be transported to the substrate inspection apparatus (SPC) via the first load-locking chamber RCB1. After the substrate SUB is transported to the first load-locking chamber RCB1, the air present in the first load-locking chamber RCB1 can be vented. Therefore, the interior of the first load-locking chamber RCB1 can be maintained in a near-vacuum state where residual air is minimized. For example, the pressure inside the first load-locking chamber RCB1 can be about 50 mTorr or less. However, the embodiments disclosed herein are not necessarily limited to this.

[0050] The first storage chamber SCB1 can be connected to the first load-locking chamber RCB1. The first storage chamber SCB1 can be in which the substrate (e.g., Figure 2The substrate (SUB) is temporarily stored in a chamber before being transferred to the first processing chamber PCB1, the second processing chamber PCB2, and the third processing chamber PCB3. The pressure inside the first storage chamber SCB1 can be substantially the same as the pressure inside the first load-locking chamber RCB1.

[0051] The first processing chamber PCB1 can be connected to the first storage chamber SCB1. Therefore, the substrate SUB transferred to the first storage chamber SCB1 can be transferred to the first processing chamber PCB1. The first processing chamber PCB1 can be a processing chamber for performing deposition processes, exposure processes, and etching processes on the substrate SUB. For example, thin films or the like can be formed on the substrate SUB in the first processing chamber PCB1.

[0052] In this embodiment, a first processing chamber PCB1 may be disposed on one side of a first transfer chamber MCB1, and a second processing chamber PCB2 may be disposed on the other side of the first transfer chamber MCB1. The first transfer chamber MCB1 can connect the first processing chamber PCB1 and the second processing chamber PCB2. A substrate SUB that has undergone deposition in the first processing chamber PCB1 can be transferred to the first transfer chamber MCB1. The first transfer chamber MCB1 may extend in a first direction D1.

[0053] Each of the first thickness sensor MP1 and the second thickness sensor MP2 can be disposed in the first transmission chamber MCB1. Figure 1 In the diagram, the first transfer chamber MCB1 is shown as including a first thickness sensor MP1 and a second thickness sensor MP2, but the first transfer chamber MCB1 may include one, three, or more thickness sensors. Furthermore, in... Figure 1 In the diagram, the thickness sensor is shown as being located only in the first transfer chamber MCB1, but the thickness sensor may also be located in the second transfer chamber MCB2.

[0054] In this embodiment, the thickness of the thin film deposited on the substrate SUB can be measured in the first transfer chamber MCB1. For example, each of the first thickness sensor MP1 and the second thickness sensor MP2 can measure the thickness of the thin film deposited on the substrate SUB. For example, the first transfer chamber MCB1 can be not only the chamber in which the substrate SUB is transferred from the first processing chamber PCB1 to the second processing chamber PCB2, but also the chamber for measuring the thickness of the thin film deposited on the substrate SUB. The first thickness sensor MP1 and the second thickness sensor MP2 can completely inspect the substrate SUB passing through the first transfer chamber MCB1.

[0055] The second processing chamber PCB2 can be connected to the first transfer chamber MCB1. After the film thickness is measured in the first transfer chamber MCB1, the substrate SUB can be transferred to the second processing chamber PCB2. The second processing chamber PCB2 can perform a deposition process on the substrate SUB. Thereafter, the substrate SUB can be sequentially transferred through the second transfer chamber MCB2 to the third processing chamber PCB3. Figure 1 In this context, the substrate inspection apparatus SPC is shown to include a first processing chamber PCB1, a second processing chamber PCB2, and a third processing chamber PCB3, but the substrate inspection apparatus SPC may include two or fewer or four or more processing chambers.

[0056] The third processing chamber PCB3 can be connected to the second storage chamber SCB2, and the second load-locking chamber RCB2 can be located on one side of the second storage chamber SCB2. For example, a substrate SUB that has undergone deposition processes through the first processing chamber PCB1, the second processing chamber PCB2, and the third processing chamber PCB3 can be sequentially transferred through the second storage chamber SCB2 and the second load-locking chamber RCB2 to the first auxiliary pin area SPA1 (see...). Figure 3 )external.

[0057] In an embodiment, the first processing chamber PCB1 may be a processing chamber for depositing an inorganic film on a substrate SUB, the second processing chamber PCB2 may be a processing chamber for depositing an organic film, and the third processing chamber PCB3 may be a processing chamber for depositing an inorganic film. However, the embodiments of this disclosure are not necessarily limited to this. The first processing chamber PCB1 may be a processing chamber for depositing an organic film on a substrate SUB, the second processing chamber PCB2 may be a processing chamber for depositing an inorganic film, and the third processing chamber PCB3 may be a processing chamber for depositing an organic film.

[0058] Figure 2 It is shown Figure 1 A cross-sectional view of an embodiment of the first transfer chamber.

[0059] refer to Figure 1 and Figure 2 The first transfer chamber MCB1 may include a transfer actuator MVP, a lifting pin LP, an auxiliary pin SP, a first thickness sensor MP1, and a second thickness sensor MP2.

[0060] The transfer actuator MVP can transfer the substrate SUB from the first processing chamber PCB1 to the second processing chamber PCB2. For example, the transfer actuator MVP can extend in a first direction D1. For example, the transfer actuator MVP can include a conveyor belt and a conveyor chain, etc. However, the embodiments of this disclosure are not necessarily limited to this.

[0061] The lifting pin LP can be positioned in the first transfer chamber MCB1 in the cross-sectional view, and can be positioned below the transfer actuator MVP. Multiple lifting pins LP can be positioned below the transfer actuator MVP. For example, the lifting pins LP can be spaced apart from each other in the first direction D1. See later. Figure 3 , Figure 4 and Figure 5 Describe the planar layout of the lifting pin LP.

[0062] The auxiliary pin SP can be positioned within the first transfer chamber MCB1 in the cross-sectional view and can be positioned below the transfer actuator MVP. Multiple auxiliary pins SP can be positioned below the transfer actuator MVP. For example, the auxiliary pin SP can overlap with the first thickness sensor MP1 and / or the second thickness sensor MP2 in the plan view. See later. Figure 3 , Figure 4 and Figure 5 Describe the planar layout of the auxiliary pin SP.

[0063] The first thickness sensor MP1 and the second thickness sensor MP2 can be located on one side of the first transmission chamber MCB1. For example... Figure 2 As shown, each of the first thickness sensor MP1 and the second thickness sensor MP2 may be spaced apart from the transfer actuator MVP in the second direction D2 and may be attached to the upper surface of the first transfer chamber MCB1.

[0064] The first thickness sensor MP1 may include a first probe PB1 that projects light onto a thin film on a substrate SUB and a first calculator CP1 that measures the thickness of the thin film. The second thickness sensor MP2 may include a second probe PB2 that projects light onto a thin film on a substrate SUB and a second calculator CP2 that measures the thickness of the thin film.

[0065] Figure 3 , Figure 4 and Figure 5 It is shown Figure 2 A plan view of the lifting pin, auxiliary pin, and base of the first transfer chamber. For example, Figure 4 This is a plan view showing the transfer of the substrate SUB from the first processing chamber PCB1 to the first transfer chamber MCB1. Figure 5 This is a plan view showing the transfer of the substrate SUB to and placement in the first transfer chamber MCB1.

[0066] refer to Figure 2 and Figure 3The first auxiliary pin region SPA1, the second auxiliary pin region SPA2, the third auxiliary pin region SPA3, the fourth auxiliary pin region SPA4, and the fifth auxiliary pin region SPA5 can be confined within the first transfer chamber MCB1. The lifting pin LP can include the first lifting pin LP1, the second lifting pin LP2, the third lifting pin LP3, and the fourth lifting pin LP4. The auxiliary pin SP can include the first auxiliary pin SP1, the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5. The transfer actuator MVP can include the first transfer actuator MVP1, the second transfer actuator MVP2, and the third transfer actuator MVP3.

[0067] Each of the first auxiliary pin region SPA1, the second auxiliary pin region SPA2, the third auxiliary pin region SPA3, the fourth auxiliary pin region SPA4, and the fifth auxiliary pin region SPA5 can be defined along the first direction D1 at both sides of the first transfer chamber MCB1. For example, as Figure 3 As shown, the first auxiliary pin region SPA1, the second auxiliary pin region SPA2, and the third auxiliary pin region SPA3 can be defined on one side of the first transfer chamber MCB1 in the direction opposite to the first direction D1. In this case, the second auxiliary pin region SPA2 can be spaced apart from the first auxiliary pin region SPA1 in the direction opposite to the third direction D3, and the third auxiliary pin region SPA3 can be spaced apart from the second auxiliary pin region SPA2 in the direction opposite to the third direction D3. The fourth auxiliary pin region SPA4 and the fifth auxiliary pin region SPA5 can be defined on one side of the first transfer chamber MCB1 in the first direction D1. In this case, the fifth auxiliary pin region SPA5 can be spaced apart from the fourth auxiliary pin region SPA4 in the direction opposite to the third direction D3.

[0068] exist Figure 3 In the diagram, the first transfer chamber MCB1 is shown as including five auxiliary pin regions SPA1, SPA2, SPA3, SPA4, and SPA5, but embodiments of this disclosure are not necessarily limited to this. The first transfer chamber MCB1 may include one or more and ten or fewer auxiliary pin regions (ranging from 1 to 10, inclusive). Preferably, the first transfer chamber MCB1 may include three or more and eight or fewer auxiliary pin regions (ranging from 3 to 8, inclusive). Furthermore, in Figure 3 , Figure 4 and Figure 5In the diagram, the first auxiliary pin area SPA1, the second auxiliary pin area SPA2, the third auxiliary pin area SPA3, the fourth auxiliary pin area SPA4, and the fifth auxiliary pin area SPA5 are shown as having a rectangular shape, but each of the first auxiliary pin area SPA1, the second auxiliary pin area SPA2, the third auxiliary pin area SPA3, the fourth auxiliary pin area SPA4, and the fifth auxiliary pin area SPA5 may include a planar shape such as an ellipse or a polygon other than a rectangle.

[0069] In embodiments, thickness sensors (e.g., first thickness sensor MP1 and second thickness sensor MP2) can correspond one-to-one with auxiliary pin regions. For example, although in Figure 2 Two thickness sensors are shown, but in such cases... Figure 3 As shown, with five auxiliary pin areas, five thickness sensors can be configured. Therefore, the number of probes included in the thickness sensors can be set to five.

[0070] The first auxiliary pin area SPA1, the second auxiliary pin area SPA2, the third auxiliary pin area SPA3, the fourth auxiliary pin area SPA4, and the fifth auxiliary pin area SPA5 can each include a first auxiliary pin SP1, a second auxiliary pin SP2, a third auxiliary pin SP3, a fourth auxiliary pin SP4, and a fifth auxiliary pin SP5, respectively. For example, the first auxiliary pin SP1 can be located in the first auxiliary pin area SPA1, the second auxiliary pin SP2 can be located in the second auxiliary pin area SPA2, the third auxiliary pin SP3 can be located in the third auxiliary pin area SPA3, the fourth auxiliary pin SP4 can be located in the fourth auxiliary pin area SPA4, and the fifth auxiliary pin SP5 can be located in the fifth auxiliary pin area SPA5.

[0071] In an embodiment, the first auxiliary pin SP1, the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5 can be symmetrically arranged in the first auxiliary pin region SPA1, the second auxiliary pin region SPA2, the third auxiliary pin region SPA3, the fourth auxiliary pin region SPA4, and the fifth auxiliary pin region SPA5, respectively, in a plan view. For example, as... Figure 3 As shown, the first auxiliary pin SP1 can be symmetrically arranged in the first auxiliary pin area SPA1 in the plan view. Since each of the first auxiliary pin SP1, the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5 is symmetrically arranged, the sagging of the base SUB can be effectively prevented or reduced when supporting the base SUB.

[0072] In an embodiment, each of the first auxiliary pin SP1, the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5 may include four to eight (inclusive) auxiliary pins. For example, as Figure 3 As shown, each of the first auxiliary pin SP1, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5 may include eight auxiliary pins. The second auxiliary pin SP2 may include four auxiliary pins. For example, the total number of the first auxiliary pin SP1, the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5 may be 36 or more and 62 or fewer (inclusive of 36 to 62). However, embodiments of this disclosure are not necessarily limited thereto.

[0073] The first lifting pin LP1, the second lifting pin LP2, the third lifting pin LP3, and the fourth lifting pin LP4 can be spaced apart from each other along the third direction D3. For example, the second lifting pin LP2 can be spaced apart from the first lifting pin LP1 in the opposite direction to the third direction D3, the third lifting pin LP3 can be spaced apart from the second lifting pin LP2 in the opposite direction to the third direction D3, and the fourth lifting pin LP4 can be spaced apart from the third lifting pin LP3 in the opposite direction to the third direction D3. Furthermore, each of the first lifting pin LP1, the second lifting pin LP2, the third lifting pin LP3, and the fourth lifting pin LP4 can be spaced apart from the first transfer actuator MVP1, the second transfer actuator MVP2, and the third transfer actuator MVP3 in a plan view.

[0074] Each of the first lifting pin LP1, the second lifting pin LP2, the third lifting pin LP3, and the fourth lifting pin LP4 can be arranged at equal intervals in the first direction D1. For example, each of the first lifting pin LP1 and the fourth lifting pin LP4 can be six, and each of the second lifting pin LP2 and the third lifting pin LP3 can be seven. The total number of the first lifting pin LP1, the second lifting pin LP2, the third lifting pin LP3, and the fourth lifting pin LP4 can be twenty-six. However, the embodiments of this disclosure are not necessarily limited to this.

[0075] Each of the first transfer actuator MVP1, the second transfer actuator MVP2, and the third transfer actuator MVP3 can extend in a first direction D1. The first transfer actuator MVP1, the second transfer actuator MVP2, and the third transfer actuator MVP3 can transfer the base SUB along the first direction D1. The first transfer actuator MVP1, the second transfer actuator MVP2, and the third transfer actuator MVP3 can be spaced apart from each other along a third direction D3. For example, the second transfer actuator MVP2 can be spaced apart from the first transfer actuator MVP1 in the opposite direction of the third direction D3, and the third transfer actuator MVP3 can be spaced apart from the second transfer actuator MVP2 in the opposite direction of the third direction D3. Figure 3 In the present disclosure, the transfer actuator MVP is shown as including three transfer actuators MVP1, MVP2 and MVP3, but the embodiments of the present disclosure are not necessarily limited thereto.

[0076] Also refer to Figure 1 and Figure 4 The substrate SUB can be transferred from the first processing chamber PCB1 to the first transfer chamber MCB1 via the transfer actuator MVP. The substrate SUB may include a display panel (e.g., Figure 10 The active area AA of the display panel DP, and includes a first test area TA1 and a second test area TA2 defined on both sides of the active area AA.

[0077] The first test element TE1, the second test element TE2, the third test element TE3, the fourth test element TE4, and the fifth test element TE5 can be disposed in the first test area TA1 and the second test area TA2. For example, the first test element TE1, the second test element TE2, and the third test element TE3 can be disposed in the first test area TA1 of the substrate SUB, and the fourth test element TE4 and the fifth test element TE5 can be disposed in the second test area TA2.

[0078] In an embodiment, the length of the long side of the base SUB in the first direction D1 may be approximately 1500 mm. The length of the short side of the base SUB in the third direction D3 may be approximately 925 mm. However, the embodiments of this disclosure are not necessarily limited to these.

[0079] Therefore, the substrate inspection apparatus may also include multiple vacuum-loaded locking chambers, storage chambers, and processing chambers connected by a transfer chamber housing a transport unit, lifting pins, auxiliary pins, and a thickness sensor. During operation, the substrate is transported through these chambers along defined orthogonal directions, and while supported by symmetrically arranged lifting pins and auxiliary pins, the thickness sensor (also referred to herein as the measuring unit) projects light onto designated test elements in the peripheral test area of ​​the substrate to accurately measure the thickness of the deposited film as the substrate moves between deposition stages.

[0080] Also refer to Figure 5 The substrate SUB can be transferred to the first transfer chamber MCB1 via the transfer actuator MVP. The first test element TE1, the second test element TE2, the third test element TE3, the fourth test element TE4, and the fifth test element TE5, disposed on the substrate SUB, can be respectively disposed in the first auxiliary pin region SPA1, the second auxiliary pin region SPA2, the third auxiliary pin region SPA3, the fourth auxiliary pin region SPA4, and the fifth auxiliary pin region SPA5 of the first transfer chamber MCB1. For example, the first test element TE1 can be disposed in the first auxiliary pin region SPA1, the second test element TE2 in the second auxiliary pin region SPA2, the third test element TE3 in the third auxiliary pin region SPA3, the fourth test element TE4 in the fourth auxiliary pin region SPA4, and the fifth test element TE5 in the fifth auxiliary pin region SPA5.

[0081] In this embodiment, the first test element TE1, the second test element TE2, the third test element TE3, the fourth test element TE4, and the fifth test element TE5 can be surrounded by the first auxiliary pin SP1, the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4, and the fifth auxiliary pin SP5, respectively. For example, the first auxiliary pin SP1 can surround the first test element TE1 in a plan view and can be symmetrically arranged about the first test element TE1. The second auxiliary pin SP2 can surround the second test element TE2 in a plan view and can be symmetrically arranged about the second test element TE2.

[0082] exist Figure 3 , Figure 4 and Figure 5 In this embodiment, the auxiliary pin area SPA is shown as including five auxiliary pin areas SPA1, SPA2, SPA3, SPA4 and SPA5, but embodiments of this disclosure are not necessarily limited thereto. The auxiliary pin area SPA may be one or more and ten or fewer (in the range of 1 to 10, inclusive).

[0083] When the number of auxiliary pin areas SPA is one or more and ten or fewer (in the range of 1 to 10, inclusive), the number of test elements TE corresponding one-to-one with the auxiliary pin areas SPA can be one or more and ten or fewer (in the range of 1 to 10, inclusive). Furthermore, the number of auxiliary pins SP disposed in the auxiliary pin areas SPA can be four or more and eighty or fewer (in the range of 4 to 80, inclusive). Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 The embodiments shown are merely one example included in this disclosure, and various embodiments beyond the scope of the description may be considered.

[0084] Figure 6 yes Figure 5 An enlarged view of the first auxiliary pin area.

[0085] refer to Figure 5 and Figure 6 The first auxiliary pin SP1 can be arranged around the first test element TE1 in the plan view. For example, the first auxiliary pin SP1 can be symmetrically arranged about the first test element TE1.

[0086] In an embodiment, the planar spacing distance DT between any of the first auxiliary pins SP1 and the first test element TE1 can be about 20 mm or more and about 80 mm or less (within the range of 20 mm to 80 mm, including 20 mm and 80 mm). Preferably, the spacing distance DT between any of the first auxiliary pins SP1 and the first test element TE1 can be about 30 mm or more and about 70 mm or less (within the range of 30 mm to 70 mm, including 30 mm and 70 mm). When the spacing distance DT is less than about 20 mm, electrical interference may occur between the first auxiliary pins SP1 and the first test element TE1, making accurate measurement of the film thickness impossible. When the spacing distance DT is greater than about 80 mm, substrate SUB sagging may occur, which may reduce reliability when measuring film thickness.

[0087] although Figure 6 The first test element TE1 and the first auxiliary pin SP1 are described, but the interval between each of the second test element TE2, the third test element TE3, the fourth test element TE4 and the fifth test element TE5 and the corresponding one of the second auxiliary pin SP2, the third auxiliary pin SP3, the fourth auxiliary pin SP4 and the fifth auxiliary pin SP5 can be substantially the same as the interval distance DT.

[0088] Figure 7 It is shown Figure 2A cross-sectional view of an embodiment of the lifting pin and auxiliary pin supporting the base. Figure 8 yes Figure 7 A magnified view of region A.

[0089] refer to Figure 2 , Figure 7 and Figure 8 The base SUB, which is transmitted by the first transmission actuator MVP1, can be lifted in the second direction D2 via the lifting pin LP and the auxiliary pin SP. For example, the base SUB supported by the first transmission actuator MVP1 can be lifted in the second direction D2 via the lifting pin LP and the auxiliary pin SP.

[0090] When the substrate SUB is supported by the lifting pin LP and the auxiliary pin SP, the end of the substrate SUB can droop downwards in the opposite direction to the second direction D2. Due to the drooping of the substrate SUB in the opposite direction to the second direction D2, the upper surface (i.e., one side) of the substrate SUB can form an angle SGA relative to a horizontal reference plane perpendicular to / tangential to the direction of gravity. For example, the upper surface of the substrate SUB can form an angle SGA with a surface having a normal parallel to the second direction D2. When drooping occurs in the substrate SUB, the thickness of the film deposited on the substrate SUB may not be accurately measured.

[0091] In this embodiment, the angle SGA between the upper surface of the substrate SUB and the horizontal reference plane can be about 1.5 degrees or less. Preferably, the angle SGA between the upper surface of the substrate SUB and the horizontal reference plane can be about 1 degree or less. Since the angle SGA meets the range described above, the thickness of the film deposited on the substrate SUB can be reliably measured.

[0092] Figure 9 It shows including Figure 7 A cross-sectional view of an embodiment of a display panel based on a substrate. Figure 10 It shows from Figure 9 A cross-sectional view of an embodiment where the test area has been removed from the display panel. Figure 9 The display panel DP shown illustrates the effect of... Figure 1 The display panel is produced after the substrate inspection equipment SPC has completed deposition. Figure 10 The display panel DP shown here illustrates the display panel after removing the first test area TA1 and the second test area TA2.

[0093] refer to Figure 7 and Figure 9The display panel DP may include a substrate SUB, a display element layer DEL, and a packaging layer ENC. The display element layer DEL may include a buffer layer BUF, a gate insulating layer GI, a transistor TR, an interlayer insulating layer ILD, a connection electrode CNE, a first via layer VIA1, a second via layer VIA2, a light-emitting element LED, and a pixel defining layer PDL. The display panel DP may have an active region AA and a first test region TA1 and a second test region TA2 located on both sides of the active region AA.

[0094] A transistor TR may include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. A light-emitting element LED may include a pixel electrode PE, a light-emitting layer EL, and a common electrode CE.

[0095] The substrate SUB can include glass substrates, metal substrates, and plastic substrates, etc. However, the embodiments of this disclosure are not necessarily limited to these; the substrate SUB can be an inorganic layer, an organic layer, or a composite material layer.

[0096] A buffer layer (BUF) can be disposed on the substrate SUB. The buffer layer BUF prevents impurities such as oxygen and moisture from penetrating through the substrate SUB into the upper part of the substrate SUB. The buffer layer BUF may include inorganic insulating material.

[0097] The active layer ACT can be disposed on the buffer layer BUF. The active layer ACT can include oxide semiconductors, silicon semiconductors, or organic semiconductors. For example, oxide semiconductors can include oxides of at least one of indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn). Silicon semiconductors can include amorphous silicon and polycrystalline silicon, etc. The active layer ACT can include a source region, a drain region, and a channel region located between the source and drain regions.

[0098] The gate insulating layer GI can be disposed on the buffer layer BUF. For example, the gate insulating layer GI can cover the active layer ACT on the buffer layer BUF. The gate insulating layer GI can include an inorganic insulating material. In an embodiment, the gate insulating layer GI can be completely disposed in the active region AA. In an embodiment, the gate insulating layer GI can be disposed only below the gate electrode GE.

[0099] The gate electrode GE may be disposed on the gate insulating layer GI. The gate electrode GE may at least partially overlap with the channel region of the active layer ACT. The gate electrode GE may include conductive materials such as metals, alloys, conductive metal nitrides, conductive metal oxides, and transparent conductive materials. Examples of conductive materials that can be used for the gate electrode GE may include gold (Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), tungsten (W), copper (Cu), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), aluminum-containing alloys, silver-containing alloys, copper-containing alloys, molybdenum-containing alloys, aluminum nitride (AlN), tungsten nitride (WN), titanium nitride (TiN), chromium nitride (CrN), tantalum nitride (TaN), strontium ruthenium oxide (SrRuO3), zinc oxide (ZnO), indium tin oxide (ITO), tin oxide (SnO2), indium oxide (In2O3), gallium oxide (Ga2O3), and indium zinc oxide (IZO), etc. These can be used individually or in combination with each other. Optionally, the gate electrode GE can have a single-layer structure or a multilayer structure including multiple conductive layers.

[0100] An interlayer insulating layer (ILD) can be disposed on the gate electrode GE. For example, the ILD can be disposed on the gate insulating layer GI and can cover the gate electrode GE on the gate insulating layer GI. The ILD can include an inorganic insulating material. In an embodiment, the ILD can be completely disposed within the active region AA.

[0101] The source electrode SE and drain electrode DE can be disposed on the interlayer insulating layer (ILD). The source electrode SE and drain electrode DE can be connected to the active layer ACT, respectively. For example, the source electrode SE can contact the source region of the active layer ACT, and the drain electrode DE can contact the drain region of the active layer ACT. Each of the source electrode SE and drain electrode DE can comprise a conductive material. The active layer ACT, gate electrode GE, source electrode SE, and drain electrode DE can form a transistor TR.

[0102] The test element TE can be further disposed on the interlayer insulating layer (ILD). For example, the test element TE can be disposed in the first test region TA1 and the second test region TA2, and can be disposed in the same layer as the source electrode SE and the drain electrode DE. For example, the first test element, the second test element, and the third test element (e.g., Figure 4 The first test element TE1, the second test element TE2, and the third test element TE3 can be set in the first test area TA1, and the fourth and fifth test elements (e.g., Figure 4The fourth test element TE4 and the fifth test element TE5 can be set in the second test area TA2.

[0103] In embodiments, the source electrode SE and drain electrode DE may comprise the same material as the test element TE. For example, the test element TE may be formed simultaneously with the source electrode SE and drain electrode DE in the same process. However, embodiments of this disclosure are not necessarily limited to this. The test element TE may also be formed in the same process as the common electrode CE.

[0104] The first via layer VIA1 can be disposed on the source electrode SE and the drain electrode DE. For example, the first via layer VIA1 can be disposed on the interlayer insulating layer ILD and can cover the source electrode SE, the drain electrode DE and the test element TE on the interlayer insulating layer ILD. The first via layer VIA1 may include an organic insulating material.

[0105] The connection electrode CNE can be disposed on the first via layer VIA1. The connection electrode CNE can transmit signals from the transistor TR to the light-emitting element LED. The connection electrode CNE can include conductive materials such as metals, alloys, conductive metal nitrides, conductive metal oxides, and transparent conductive materials. These can be used alone or in combination with each other. However, the embodiments disclosed herein are not necessarily limited thereto.

[0106] The second via layer VIA2 can be disposed on the connecting electrode CNE. For example, the second via layer VIA2 can be disposed on the first via layer VIA1 and can cover the connecting electrode CNE. The second via layer VIA2 can be made of substantially the same material as the first via layer VIA1.

[0107] The pixel electrode PE can be disposed on the second via layer VIA2. The pixel electrode PE may include a conductive material. The pixel electrode PE can be connected to the drain electrode DE via the connection electrode CNE. Therefore, the pixel electrode PE can be electrically connected to the transistor TR.

[0108] A pixel defining layer (PDL) may be disposed on a pixel electrode (PE). For example, the pixel defining layer (PDL) may expose at least a portion of the pixel electrode (PE). The pixel defining layer (PDL) may comprise an inorganic insulating material or an organic insulating material.

[0109] The light-emitting layer EL can be disposed on the pixel electrode PE. In an embodiment, the light-emitting layer EL can be disposed in an opening defined by the pixel defining layer PDL. For example, the light-emitting layer EL can be surrounded by the pixel defining layer PDL. In an embodiment, the light-emitting layer EL can also be disposed on the pixel defining layer PDL. The light-emitting layer EL can include at least one of organic light-emitting materials and quantum dots. However, the embodiments of this disclosure are not necessarily limited thereto.

[0110] A common electrode CE can be disposed on the light-emitting layer EL. Alternatively, the common electrode CE can be disposed on the pixel-defining layer PDL. For example, the common electrode CE can be continuously disposed on the light-emitting layer EL and the pixel-defining layer PDL. The common electrode CE may include a conductive material. The light-emitting layer EL can emit light based on the voltage difference between the pixel electrode PE and the common electrode CE.

[0111] The encapsulation layer ENC can be disposed on the common electrode CE. The encapsulation layer ENC may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In embodiments, the inorganic and organic encapsulation layers may be alternately disposed. For example, the organic encapsulation layer may include polymer-cured materials such as polyacrylate, epoxy resin, and silicone resin. For example, the inorganic encapsulation layer may include silicon oxide, silicon nitride, silicon carbide, alumina, tantalum oxide, hafnium oxide, zirconium oxide, and titanium oxide.

[0112] In an embodiment, the substrate inspection device (e.g., Figure 1 The first transfer chamber (MCB1) can measure the thickness of the inorganic or organic encapsulation layer included in the encapsulation layer ENC. For example, the first thickness sensor MP1 and the second thickness sensor MP2 of the first transfer chamber MCB1 can measure the thickness of the inorganic or organic encapsulation layer included in the encapsulation layer ENC. The first and second sensors (e.g., Figure 2 The first calculator CP1 and the second calculator CP2 can determine whether the thickness of the encapsulation layer ENC is equal to the preset thickness.

[0113] Therefore, a substrate with multiple test elements can be positioned within corresponding auxiliary pin areas of the transfer chamber, with each test element symmetrically surrounded and supported by auxiliary pins to prevent sagging during thickness measurement. The spacing between each test element and its surrounding auxiliary pins can be carefully controlled, for example, between 30 mm and 70 mm, to balance electrical isolation and mechanical stability, thereby ensuring accurate optical thickness measurement while maintaining an angle between the substrate and the horizontal plane not exceeding 1.5°. A display panel can be formed on the substrate to include multiple functional layers such as transistor layers, electrode layers, and encapsulation layers, and the inspection device uses optical sensors to measure the thickness of these inorganic or organic encapsulation layers to verify conformity with preset specifications.

[0114] Figure 11 It shows the use Figure 1 A flowchart illustrating an embodiment of a method for inspecting a substrate using a substrate inspection device.

[0115] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6, Figure 7 , Figure 8 , Figure 9 , Figure 10 and Figure 11 A thin film can be deposited on the substrate SUB in the first processing chamber PCB1. The thin film can be... Figure 9 The thin-film encapsulation layer ENC shown is either an inorganic thin-film layer or an organic thin-film layer. Optionally, the thin film may refer to either a first via layer VIA1 or a second via layer VIA2.

[0116] After a thin film is deposited on the substrate SUB, the substrate SUB can be transferred to the first transfer chamber MCB1 via the transfer actuator MVP (also referred to herein as the transfer unit). The substrate SUB transferred to the first transfer chamber MCB1 can be lifted by the lifting pin LP and the auxiliary pin SP. In this case, compared to the case where the substrate SUB is supported only by the lifting pin LP, supporting the substrate SUB with the auxiliary pin SP can prevent or reduce the occurrence of substrate SUB sagging.

[0117] The substrate SUB, lifted by the lifting pin LP and the auxiliary pin SP, can have a film thickness measured by a first thickness sensor MP1 and a second thickness sensor MP2. In an embodiment, the multiple probes of the thickness sensors can correspond one-to-one with the test element TE of the substrate SUB. In an embodiment, the first probe PB1 and the second probe PB2 can project light onto the test element TE included in the substrate SUB to measure the film thickness. However, the embodiments of this disclosure are not necessarily limited to this. The first probe PB1 and the second probe PB2 can also project electrons onto the test element TE to measure the film thickness.

[0118] Since the test element TE is positioned on the substrate SUB, the light emitted from the first thickness sensor MP1 and the second thickness sensor MP2 can be reflected by the test element TE, allowing for selective measurement of the thickness of the thin film deposited on the test element TE.

[0119] In this scenario, the first calculator CP1 and the second calculator CP2 can determine whether the measured thickness of the film is equal to a preset thickness. For example, when the measured thickness of the film differs from the preset thickness, the substrate SUB can be returned to the first processing chamber PCB1. In another example, when the measured thickness of the film equals the preset thickness, the substrate SUB can be transferred to the second processing chamber PCB2.

[0120] Subsequently, thin film processing can be sequentially performed on the substrate SUB in the second processing chamber PCB2 and the third processing chamber PCB3. The substrate SUB, having undergone sequential thin film processing, can be transported out of the substrate inspection equipment SPC through the second storage chamber SCB2 and the second load locking chamber RCB2. Afterwards, as... Figure 10As shown, the first test area TA1 and the second test area TA2 of the substrate SUB can be removed.

[0121] For reference Figure 1 and Figure 11 As described, when the substrate SUB is supported by the lifting pin LP, sagging of the substrate SUB can be prevented or reduced by the auxiliary pin SP. As a result, the thickness of the film deposited on the substrate SUB can be measured more accurately. For example, the reliability of the substrate inspection equipment SPC for measuring film thickness can be improved because the auxiliary pin SP provides additional support to the substrate SUB.

[0122] Furthermore, since the film thickness is measured during transport, rather than after all processing is complete, the substrate SUB can be returned and reprocessed if the film thickness differs from the preset thickness. As a result, time can be reduced and cost efficiency improved for the substrate inspection equipment (SPC).

[0123] Figure 12 This is a block diagram illustrating an electronic device according to an embodiment of the present disclosure.

[0124] refer to Figure 12 The display device according to the embodiment can be applied to various electronic devices 10. The electronic device 10 according to the embodiment includes the display device described above, and may also include modules or devices with additional functions in addition to the display device.

[0125] The electronic device 10 may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0126] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0127] Data necessary for the operation of processor 12 or display module 11 can be stored in memory 13. When processor 12 executes the application stored in memory 13, image data signals and / or input control signals can be transmitted to display module 11, and display module 11 can process the received signals and output image information through the display screen.

[0128] The power module 14 can convert the power supplied by a power supply module such as a power adapter or battery device. For example, the power module 14 may include a power conversion module that generates the power necessary for the operation of the electronic device 10.

[0129] At least one of the components of the electronic device 10 described above may be included in the display device according to the embodiment. Furthermore, some of the individual modules that are functionally included in a single module may be included in the display device, while others may be provided separately from the display device. For example, the display device may include a display module 11, and the processor 12, memory 13, and power module 14 may be provided as other devices in the electronic device 10, rather than being provided in the display device.

[0130] Figure 13 It is based on Figure 12 Schematic diagrams of electronic devices in various embodiments.

[0131] refer to Figure 12 and Figure 13 Various electronic devices 10 employing the display device according to the embodiments may include image display electronic devices such as smartphones 10_1a, tablet computers 10_1b, laptops / notebook computers 10_1c, televisions 10_1d, and computer monitors 10_1e. Furthermore, various electronic devices 10 employing the display device according to the embodiments may also include wearable electronic devices such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c that include display modules, and vehicle electronic devices 10_3 such as central information displays (CIDs) and rearview mirror displays installed in the instrument panel, central dashboard, and instrument panel of a vehicle.

[0132] This disclosure can be applied to display devices and electronic devices including such display devices. For example, this disclosure can be applied to high-resolution smartphones, mobile phones, smart tablets, smartwatches, tablet computers, vehicle navigation systems, televisions, computer monitors, laptops / notebook computers, etc.

[0133] Although this disclosure has been described with reference to exemplary embodiments, those skilled in the art will understand that various modifications and changes can be made without departing from the spirit and scope of this disclosure.

Claims

1. An inspection device, wherein, The inspection equipment includes: A transfer chamber is configured to receive a substrate, the substrate including a test element and a thin film deposited on the upper surface of the test element; A transfer actuator is disposed in the transfer chamber, and the transfer actuator is configured to transfer the substrate in a first direction; Multiple lifting pins are disposed below the transfer actuator in the cross-sectional view. The multiple lifting pins are configured to support the base in a second direction intersecting the first direction, and the multiple lifting pins are spaced apart from the transfer actuator in the plan view. A plurality of auxiliary pins, disposed below the transfer actuator in the cross-sectional view, are configured to support the substrate in the second direction. In the plan view, the auxiliary pins surround the test element of the substrate and are symmetrically arranged about the test element. A thickness sensor includes multiple probes disposed on one side of the transfer chamber and configured to measure the thickness of the thin film deposited on the test element on the substrate.

2. The inspection device according to claim 1, wherein, Each of the plurality of auxiliary pins is spaced from the test element in the plan view at a distance ranging from 20 mm to 80 mm.

3. The inspection device according to claim 1, wherein, Each of the plurality of auxiliary pins is spaced apart from the transfer actuator in the plan view.

4. The inspection device according to claim 1, wherein, The number of the plurality of auxiliary pins is in the range of 4 to 80.

5. The inspection device according to claim 1, wherein, The test element includes a first test element and a second test element spaced apart from the first test element in the plan view, and The plurality of auxiliary pins include a first auxiliary pin symmetrically arranged with respect to the first test element and a second auxiliary pin symmetrically arranged with respect to the second test element.

6. The inspection device according to claim 5, wherein, The number of each of the first auxiliary pin and the second auxiliary pin is in the range of 4 to 8.

7. The inspection device according to claim 1, wherein, The inspection equipment also includes: A first processing chamber is located on one side of the transfer chamber; and The second processing chamber is located on the other side of the transfer chamber.

8. The inspection device according to claim 7, wherein, The first processing chamber is configured for depositing an inorganic film, and the second processing chamber is configured for depositing an organic film.

9. The inspection device according to claim 8, wherein, The thickness sensor is configured to measure the thickness of the inorganic membrane or the organic membrane.

10. The inspection device according to any one of claims 1 to 9, wherein, The number of test elements is in the range of 1 to 10, and The plurality of probes of the thickness sensor correspond one-to-one with the test elements of the substrate.

11. The inspection device according to any one of claims 1 to 9, wherein, The thickness sensor projects light through the plurality of probes.

12. A method of inspection, wherein, The method includes: In the first processing chamber, a thin film is deposited on a substrate including the test element; The substrate is transferred into the transfer chamber using a transfer actuator; The substrate is lifted using a plurality of lifting pins spaced apart from the transfer actuator in a plan view and a plurality of auxiliary pins arranged symmetrically about the test element; and The thickness of the thin film deposited on the test element on the substrate is measured using a thickness sensor.

13. The method according to claim 12, wherein, In lifting the base using the plurality of lifting pins and the plurality of auxiliary pins In the plan view, each of the plurality of auxiliary pins is spaced from the test element of the substrate by a distance ranging from 20 mm to 80 mm.

14. The method according to claim 13, wherein, After lifting the substrate using the plurality of lifting pins and the plurality of auxiliary pins. The angle formed between one side of the base and the horizontal reference plane is less than or equal to 1.5 degrees.

15. The method according to claim 12, wherein, In measuring the thickness of the film, The thickness sensor measures the thickness of the thin film by projecting light onto the test element on the substrate.

16. The method according to claim 12, wherein, After measuring the thickness of the film, the method further includes: When the thickness of the film is measured to be equal to a preset thickness, the substrate is transferred to the second processing chamber.

17. The method according to claim 16, wherein, After transferring the substrate to the second processing chamber, the method further includes: Remove the test area of ​​the test element on which the substrate is disposed from the substrate.

18. The method according to claim 16, wherein, The first processing chamber is a processing chamber for depositing inorganic films, and the second processing chamber is a processing chamber for depositing organic films.

19. The method according to claim 12, wherein, After measuring the thickness of the film, the method further includes: When the thickness of the film is measured to be different from the preset thickness, the substrate is returned to the first processing chamber.

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