Magnetron sputtering device

Abstract

The utility model relates to a magnetron sputtering device. The magnetron sputtering device comprises a target tube; the magnetic bar penetrates through the inner cavity of the target tube; the two sides of the target tube are sleeved with the magnetic field shielding sleeves, the magnetic field shielding sleeves are located at the two ends of the magnetic bar, and the magnetic field shielding sleeves and the target tube are fixedly arranged; and the target material sleeves the target tube and is positioned between the magnetic field shielding sleeves on the two sides of the target tube. The utility model has the beneficial effects that the magnetic field shielding sleeve can shield crossed magnetic fields at the two ends of the magnetic bar, so that the two ends of the target material are not sputtered, the excessive etching at the two ends of the target material is reduced, and the utilization rate of the target material is improved; when the magnetic field shielding sleeve is arranged in a magnetic field, magnetic lines of force of the magnetic field can be effectively absorbed and redirected. By absorbing and guiding magnetic lines, the magnetic field shielding sleeve can reduce penetration of a magnetic field and weaken magnetic field interference to the surrounding environment.

Description

Technical Field

[0001] The utility model relates to the field of physical vapor deposition, in particular to a magnetron sputtering device. Background Art

[0002] In a PVD device, when power is applied to the cathode target, the target releases a jet of atoms or molecules to form a so-called evaporation cloud, which are deposited on the substrate in a vacuum to form a thin film.

[0003] In order to control the movement of atoms or molecules during the deposition process, PVD equipment usually generates a magnetic field by placing permanent magnets or electromagnetic driven magnets around the target material. This cathode magnetic field can form a magnetic mirror effect between the deposition evaporation source and the substrate, which confines the atomic or molecular beam to a specific area, allowing it to travel in a straight line and reduce the impact on the deposited film.

[0004] Different magnetic field settings can affect the distribution of evaporated substances in the chamber, adjust the deposition rate, the organizational structure of the film, and the film-forming properties, etc. Therefore, for specific materials and deposition requirements, adjusting the cathode magnetic field can improve the uniformity and quality of the coating.

[0005] In the production of magnetron sputtering cylindrical targets currently used in China, the etching speed at both ends of the target tube is generally faster than that in the middle, which causes deep grooves to form in the target material, resulting in a huge waste of target material and even puncturing the target tube, causing water leakage.

[0006] To solve the above problems, a more common method is to extend the target tube and the magnetic rod, thereby extending the target material accordingly, so that the length exceeds the length of the substrate to be deposited, and the substrate is located in an area with a more uniform magnetic field as much as possible. This method will cause waste of raw materials and increase equipment costs.

[0007] There are also methods such as adjusting the position of the magnet and adding aluminum hoops to control the strength and direction of the cathode magnetic field, but the etching effect on controlling the two ends of the target tube is not very obvious. Utility Model Content

[0008] The technical problem to be solved by the utility model is that the etching speed at the two ends of the target tube is faster than that in the middle, so that the target material forms a deep groove phenomenon, resulting in a great waste of the target material.

[0009] The technical solution adopted by the utility model to solve the technical problem is: a magnetron sputtering device, which is characterized by comprising:

[0010] Target tube;

[0011] A magnetic rod, the magnetic rod is inserted into the inner cavity of the target tube;

[0012] Magnetic field shielding sleeves are provided on both sides of the target tube, the positions of the magnetic field shielding sleeves are at the two ends of the magnetic bar, and the magnetic field shielding sleeves are fixedly arranged with the target tube;

[0013] The target material is sleeved on the target tube and is located between the magnetic field shielding sleeves on both sides of the target tube.

[0014] It is further defined that the magnetic field shielding sleeve is made of a high magnetic permeability material with a magnetic permeability of more than 100.

[0015] It is further defined that the magnetic field shielding sleeve is an iron-nickel alloy, a superconductor or an iron-nickel alloy.

[0016] It is further defined that the magnetic field shielding sleeve is bound to the target tube by a target material binding material, so that the magnetic field shielding sleeve and the target tube are fixed.

[0017] It is further defined that both the magnetic field shielding sleeve and the target material are cylindrical, and the magnetic field shielding sleeve and the target material have the same size.

[0018] It is further defined that the gap between the magnetic field shielding sleeve and the target material is between 0.2 mm and 0.5 mm.

[0019] It is further defined that the magnetron sputtering device also includes a cathode body, an electric field shielding cover and a target end shielding cover, the two ends of the target tube are rotatably supported on the cathode body, the target end shielding cover covers the end of the target tube, the electric field shielding cover covers the outside of the magnetic field shielding cover, the electric field shielding cover is connected to the target end shielding cover and is connected to zero potential, the shielding cover component, the cathode target component and the cathode body are insulated from each other, the shielding cover component is composed of the electric field shielding cover and the target end shielding cover, and the cathode target component is composed of the target material and the magnetic field shielding cover.

[0020] The utility model has the beneficial effects that the magnetic field shielding sleeve can shield the cross magnetic field at both ends of the magnetic rod, so that sputtering does not occur at both ends of the target tube, thereby reducing excessive etching at both ends of the target material and improving the utilization rate of the target material;

[0021] When the magnetic field shielding sleeve is placed in a magnetic field, it can effectively absorb and redirect the magnetic field lines. By absorbing and guiding the magnetic field lines, the magnetic field shielding sleeve can reduce the penetration of the magnetic field and reduce the magnetic field interference to the surrounding environment. The magnetic field shielding sleeve made of high magnetic permeability material can significantly improve the magnetic field shielding effect;

[0022] Higher magnetic permeability means higher magnetic field guiding ability, making it easier for magnetic field lines to be absorbed and guided by the magnetic field shielding sleeve;

[0023] A magnetic field shielding sleeve is surrounded outside the magnetic field shielding sleeve, which can cut off the electric field between the magnetic field shielding sleeve and the substrate, and is also equivalent to secondary magnetic field shielding. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The utility model is further described below in conjunction with the accompanying drawings and embodiments;

[0025] Figure 1 It is a schematic diagram of the arrangement structure of the target material and the magnetic field shielding on the target tube of the utility model;

[0026] Figure 2 yes Figure 1 AA section view;

[0027] Figure 3 yes Figure 1 BB cross-section diagram;

[0028] Figure 4 It is a structural schematic diagram of the magnetron sputtering device of the utility model;

[0029] Figure 5 yes Figure 4 CC profile of ;

[0030] Figure 6 yes Figure 2 Schematic diagram of magnetic field distribution;

[0031] Figure 7 yes Figure 5 Schematic diagram of magnetic field distribution;

[0032] In the figure, 1. target tube, 2. magnetic rod, 3. magnetic field shielding sleeve, 4. target material, 5. cathode body, 6. electric field shielding cover, 7. target material end shielding cover, 8. substrate. DETAILED DESCRIPTION

[0033] like Figures 1 to 7 As shown, a magnetron sputtering device comprises:

[0034] Target tube 1;

[0035] A magnetic rod 2, the magnetic rod 2 is inserted into the inner cavity of the target tube 1;

[0036] A magnetic field shielding sleeve 3 is provided on both sides of the target tube 1. The magnetic field shielding sleeve 3 is located at both ends of the magnetic bar 2. The magnetic field shielding sleeve 3 is fixed to the target tube 1.

[0037] The target material 4 is sleeved on the target tube 1 and is located between the magnetic field shielding sleeves 3 on both sides of the target tube 1 .

[0038] The target material 4 is in segmented form and is prepared according to the size of the substrate. The target blank material is made into a cylindrical shape through the target material process. The target material thickness is based on actual needs and is generally between 9 mm and 14 mm.

[0039] The cylindrical target material 4 is bound to the target tube 1 by the target binding material to fix the target material 4 to the target tube 1. Each segment of the target material 4 is evenly distributed to both ends with the middle position of the target tube as the center, and the gap between each segment of the target material 4 is maintained between 0.2 mm and 0.5 mm. The gap between the magnetic field shielding sleeve 3 and the target material 4 is also between 0.2 mm and 0.5 mm. The target binding material is not limited to metal indium, metal mixed glue, etc.

[0040] The magnetic field shielding sleeve 3 is made of a high magnetic permeability material with a magnetic permeability of more than 100, specifically, an iron-nickel alloy, a superconductor or an iron-nickel alloy.

[0041] The magnetic field shielding cover 3 and the target material 4 are both cylindrical, and the magnetic field shielding cover 3 and the target material 4 have the same size.

[0042] The magnetic field shielding sleeve 3 is also bound to the target tube 1 through the target binding material like the target material 4 , so that the magnetic field shielding sleeve 3 and the target tube 1 are fixed.

[0043] In this embodiment, the magnetic field shielding sleeve 3 is specifically made of an iron-nickel alloy material. The iron-nickel alloy material is made into a cylindrical shape using the preparation process of the target material 4 and is bound to both ends of the target tube 1. The thickness of the magnetic field shielding sleeve 3 is based on actual needs, and the effective shielding of the magnetic field is achieved by adjusting the thickness of the magnetic field shielding sleeve 3.

[0044] The surface magnetic field of the target 4 was tested using a Tesla meter, and the magnetic field uniformity was maintained within 2% by adjusting the magnet distance and the single magnetic field strength.

[0045] The magnetron sputtering device also includes a cathode body 5, an electric field shielding cover 6 and a target end shielding cover 7. Both ends of the target tube 1 are rotatably supported on the cathode body 5. The target end shielding cover 7 covers the end of the target tube 1. The electric field shielding cover 6 covers the outside of the magnetic field shielding cover 3. The electric field shielding cover 6 is connected to the target end shielding cover 7 and is connected to zero potential. The shielding cover component composed of the electric field shielding cover 6 and the target end shielding cover, the cathode target component composed of the target 4 and the magnetic field shielding cover 3, and the cathode body 5 are insulated from each other.

[0046] The electric field shielding cover 6 installed outside the magnetic field shielding sleeve 3 can cut off the electric field between the target material 4 and the substrate 8, thereby forming a secondary shielding of the magnetic field.

[0047] like Figure 6 The figure shows the magnetic field generated by the magnetic bar. In the target area, the magnetic field generated by the magnetic bar is uniform and not shielded. However, in the end area of ​​the magnetic bar, there is a cross magnetic field. The sputtering rate is the highest in the cross magnetic field area, which will cause the target 4 to etch a channel.

[0048] like Figure 7As shown, when the magnetic field shielding sleeve 3 is placed in a magnetic field, it can effectively absorb and redirect the magnetic field lines of the magnetic field. By absorbing and guiding the magnetic field lines, the magnetic field shielding sleeve 3 can reduce the penetration of the magnetic field and reduce the magnetic field interference to the surrounding environment.

[0049] An electric field shielding cover 6 is surrounded outside the magnetic field shielding cover 3 to cut off the electric field between the magnetic field shielding cover 3 and the substrate 8, which is also equivalent to secondary magnetic field shielding.

Claims

1. A magnetron sputtering device, characterized in that it comprises: Target tube (1); A magnetic rod (2), wherein the magnetic rod (2) is inserted into the inner cavity of the target tube (1); A magnetic field shielding sleeve (3), wherein both sides of the target tube (1) are covered with a magnetic field shielding sleeve (3), the magnetic field shielding sleeve (3) is located at the two ends of the magnetic bar (2), and the magnetic field shielding sleeve (3) is fixedly arranged on the target tube (1); A target material (4) is sleeved on a target tube (1) and is located between magnetic field shielding sleeves (3) on both sides of the target tube (1).

2. The magnetron sputtering device according to claim 1, characterized in that: The magnetic field shielding sleeve (3) is made of a high magnetic permeability material with a magnetic permeability of more than 100.

3. The magnetron sputtering device according to claim 1, characterized in that: The magnetic field shielding sleeve (3) is made of an iron-nickel alloy, a superconductor or an iron-nickel alloy.

4. The magnetron sputtering device according to claim 1, characterized in that: The magnetic field shielding sleeve (3) is bound to the target tube (1) by means of a target material binding material, thereby achieving fixation of the magnetic field shielding sleeve (3) and the target tube (1).

5. The magnetron sputtering device according to claim 1, characterized in that: The magnetic field shielding sleeve (3) and the target material (4) are both cylindrical, and the magnetic field shielding sleeve (3) and the target material (4) have the same size.

6. The magnetron sputtering device according to claim 1, characterized in that: The gap between the magnetic field shielding sleeve (3) and the target material (4) is between 0.2 mm and 0.5 mm.

7. The magnetron sputtering device according to claim 1, characterized in that: The invention also comprises a cathode body (5), an electric field shielding cover (6) and a target end shielding cover (7). The two ends of the target tube (1) are rotatably supported on the cathode body (5). The target end shielding cover (7) covers the end of the target tube (1). The electric field shielding cover (6) covers the outside of the magnetic field shielding cover (3). The electric field shielding cover (6) and the target end shielding cover (7) are connected to zero potential. The shielding cover component composed of the electric field shielding cover (6) and the target end shielding cover, the cathode target component composed of the target (4) and the magnetic field shielding cover (3), and the cathode body (5) are insulated from each other.

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