Mass transfer equipment

Abstract

The utility model discloses mass transfer equipment which comprises a base, a laser device and a transfer head. The laser device is connected with the base and used for generating a laser beam. The transfer head is connected with the base, receives the laser beam and comprises an attachment device and a bearing device. The attachment device comprises an attachment body and a plurality of attachment parts. The attachment body is connected to the carrier device. The plurality of attachment parts are formed on the attachment body and are used for attaching a plurality of semiconductor elements. The bearing device comprises a shade. The shade comprises a top surface, a bottom surface and a plurality of optical channels. The plurality of optical channels extend from the top surface to the bottom surface and correspond to the plurality of attachment portions. Wherein the laser beam is projected toward the top surface of the mask, and the plurality of optical channels allow the laser beam to pass therethrough to be projected to the plurality of attachment portions to weld or release the plurality of semiconductor elements.

Description

Technical Field

[0001] The utility model relates to a process equipment, in particular to a mass transfer equipment. Background Art

[0002] In order to improve the transfer or transposition efficiency of semiconductor components, mass transfer technology is to pick up a large number of semiconductor components from a wafer or other substrate through the microstructure of a transfer head, move the transfer head to a target substrate, and weld the semiconductor components to the relative position of the target substrate when alignment is completed to form an electronic device.

[0003] Welding semiconductor components can be done by irradiating the transfer head with a laser beam, leaving the semiconductor components on the target substrate. Figure 5 As shown, when the semiconductor element of the transfer head 93 is bonded to the target substrate, the microstructure 931 is affected by the bonding pressure. When the laser beam 911 of the laser source 91 is fully irradiated on the transfer head 93, in addition to the semiconductor element being welded to the target substrate, the structure of the transfer head 93 is also affected by the laser beam 911 and has a heat accumulation problem, especially the part connected to the microstructure 931. When the transfer head 93 is repeatedly affected by pressure and heat accumulation, it is usually found that the transfer head has been damaged or deformed, as shown in the dotted part in the figure, which changes the position spacing of the overall microstructure 931. The change in spacing will affect the accuracy of picking up the semiconductor element, which in turn causes the semiconductor element to fail to be correctly bonded to the correct (predetermined) position of the target substrate. Ultimately, the yield of the electronic product is poor. This problem is more obvious in the transfer of semiconductor elements of tiny size. Utility Model Content

[0004] In view of the above shortcomings, the mass transfer device of the present invention can allow the laser beam to be projected more accurately on the attachment portion to reduce the thermal impact of the laser beam on the transfer head, thereby improving the stability and durability of the transfer head.

[0005] In order to achieve the above-mentioned purpose, the mass transfer equipment of the utility model includes a base, a laser device and a transfer head. The laser device is connected to the base and can generate a laser beam. The transfer head is connected to the base and receives the laser beam, and includes an attachment device and a carrier. The attachment device includes an attachment body and a plurality of attachment parts. The attachment body is connected to the carrier. The plurality of attachment parts are formed on the attachment body and can attach a plurality of semiconductor components. The carrier includes a mask. The mask includes a top surface, a bottom surface and a plurality of light channels. The plurality of light channels extend from the top surface to the bottom surface and correspond to a plurality of attachment parts. Among them, the laser beam is projected toward the top surface of the mask, and the plurality of light channels allow the laser beam to pass through and be projected to the plurality of attachment parts to weld or release the plurality of semiconductor components.

[0006] The top surface of the mask is capable of reflecting the laser beam.

[0007] The carrying device includes a substrate and a fixing portion, wherein the fixing portion is connected to the substrate and can fix the mask.

[0008] The substrate is located between the mask and the attachment device, and the bottom surface of the mask faces the substrate.

[0009] Wherein, the mask and the substrate maintain a distance.

[0010] The mask is located between the substrate and the attachment device, the top surface of the mask faces the substrate, and the bottom surface of the mask faces the attachment device.

[0011] The peripheral size of each of the plurality of attachment portions is the same as or smaller than the size of each of the plurality of light channels of the mask.

[0012] The plurality of light channels penetrate the top surface and the bottom surface.

[0013] The mask includes a metal material and can reflect the laser beam.

[0014] Thus, the optical channel of the mask in the mass transfer device of the present invention corresponds to the attachment portion, so the laser beam is only projected on the attachment portion to reduce the thermal impact on the attachment device, thereby improving the stability and service life of the transfer head.

[0015] The detailed structure or features of the mass transfer device provided by the present invention will be described in the detailed description of the implementation method in the following. However, those skilled in the art should understand that the detailed description and the specific embodiments listed for implementing the present invention are only applicable to the description of the present invention and are not intended to limit the scope of the claims of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the application environment of the mass transfer device of the utility model.

[0017] Figure 2 yes Figure 1 FIG. 1 is a schematic diagram of a first embodiment of a laser device and a transfer head of a mass transfer device of the present invention.

[0018] Figure 3 yes Figure 1 FIG. 1 is a schematic diagram of a second embodiment of a laser device and a transfer head of a mass transfer device of the present invention.

[0019] Figure 4 yes Figure 1 FIG. 1 is a schematic diagram of a third embodiment of a laser device and a transfer head of a mass transfer device of the present invention.

[0020] Figure 5It is a schematic diagram of a laser device and a transfer head of a mass transfer device in the prior art.

[0021] Wherein, the reference numerals are:

[0022] 10: Mass transfer equipment

[0023] 11: Base

[0024] 13: Laser device

[0025] 131:Laser beam

[0026] 133: Reflected Light

[0027] 15: Transfer head

[0028] 17: Attachment device

[0029] 171: Attachment

[0030] 173: Attached body

[0031] 19: Carrying device

[0032] 191:Mask

[0033] 1911: Top

[0034] 1913: Bottom

[0035] 1915: Light Channel

[0036] 193:Substrate

[0037] 195:Fixed part

[0038] 30: Feeding tray

[0039] 31: Semiconductor components

[0040] 50: Target substrate

[0041] 91: Laser source

[0042] 911:Laser Beam

[0043] 93: Transfer head

[0044] 931: Microstructure DETAILED DESCRIPTION

[0045] First, it is explained that throughout the entire specification, including the embodiments described below and the claims, the terms related to directions are based on the directions in the drawings. Secondly, in the embodiments and drawings to be described below, the same element numbers represent the same or similar elements or their structural features.

[0046] like Figure 1 As shown, the mass transfer device 10 of the present invention is used to transfer the semiconductor components 31 carried by the material tray 30 to the target substrate 50. The material tray 30 can be a wafer or other semiconductor components 31. The semiconductor components 31 can be crystal grains, and optoelectronic components are used as an example in the embodiment.

[0047] The mass transfer device 10 includes a base 11 , a laser device 13 and a transfer head 15 . The laser device 13 is connected to the base 11 and is used to generate a laser beam 131 . The transfer head 15 is connected to the base 11 .

[0048] like Figure 2 As shown, the transfer head 15 includes an attachment device 17 and a carrier device 19. The attachment device 17 includes a plurality of attachment portions 171 and an attachment body 173. The plurality of attachment portions 171 are formed on the attachment body 173 and are used to attach a plurality of semiconductor components 31. The attachment body 173 is connected to the carrier device 19, and the connection can be through bonding or other bonding methods. The carrier device 19 is located on the top surface of the attachment body 173, and the attachment portions 171 are distributed on the bottom surface of the attachment body 173. In this embodiment, the attachment portion 171 is a microstructure protruding from the bottom surface of the attachment body 173.

[0049] The carrying device 19 includes a mask 191. The mask 191 includes a top surface 1911, a bottom surface 1913 and a plurality of light channels 1915. The plurality of light channels 1915 extend from the top surface 1911 to the bottom surface 1913 and correspond to the plurality of attachment portions 171. In this embodiment, the light channels 1915 are openings that penetrate the top surface 1911 and the bottom surface 1913. In this embodiment, the mask 191 is made of metal material to reflect the laser beam by means of the metal material. The metal material has a low laser absorption rate. In other embodiments, the mask 191 may also be made of other materials to allow the top surface around the light channels 1915 to form a reflective surface. In other embodiments, the light channels 1915 may not be openings, but channels made of optical materials (such as high-transmittance materials) to allow the laser beam to pass through. In this way, the mask 191 may be a structure made of metal materials and high-transmittance materials.

[0050] The size of the optical channel 1915 is roughly the same as or smaller than the size around the attachment portion 171, so that the laser beam passing through the optical channel 1915 can be correctly projected within the range of the attachment portion 171 to reduce the position deviation of the attachment portion 171 caused by thermal deformation of the attachment body 173.

[0051] The laser beam is projected toward the top surface 1911 of the mask 191 , and the plurality of light channels 1915 allow the laser beam to pass through and project to the plurality of attachment portions 171 to solder the plurality of semiconductor components 31 to the target substrate. The top surface 1911 is used to reflect the laser beam to form reflected light 133 .

[0052] In other embodiments, the semiconductor element 31 attached to the attachment portion 171 may also be released by a laser beam, rather than being limited to welding.

[0053] The carrier device 19 includes a substrate 193 and a fixing portion 195. The substrate 193 is transparent to allow the laser beam to pass through. The substrate 193 is usually made of glass or other high-transmittance materials. The fixing portion 195 is connected to the substrate 193 by screws, mechanical fastening, adhesive, magnetism or vacuum suction. The fixing portion 195 is used to fix the mask 191 to ensure that the light channel 1915 of the mask 191 is aligned with the attachment portion 171.

[0054] In this embodiment, the substrate 193 is located between the mask 191 and the attachment device 17, and the bottom surface 1913 of the mask 191 faces the substrate 193. The mask 191 and the substrate 193 are kept at a distance to prevent the heat energy of the mask 191 from being transferred to the substrate 193, thereby affecting the attachment body 173 and the attachment portion 171.

[0055] In another embodiment, when the substrate 193 does not transfer the heat energy of the mask 191 to the attachment body 173, or even if it transfers the heat energy but does not cause the attachment body 173 to be deformed by heat, the mask 191 and the substrate 193 are allowed to fit each other, such as: Figure 3 shown.

[0056] like Figure 4 As shown, the mask 191 is located between the substrate 193 and the attachment body 173 of the attachment device 17, the top surface 1911 of the mask 191 faces the substrate 193, and the bottom surface 1913 of the mask 191 faces the attachment body 173 of the attachment device 17. In this embodiment, the optical path of the laser beam acting on the attachment portion 171 is sequentially through the substrate 193 and the optical channel 1915 of the mask 191, so that the distance from the laser beam passing through the optical channel 1915 of the mask 191 to the attachment portion 173 is relatively long. Figure 2 and Figure 3 The distance is shorter and the range of the laser beam irradiating the attachment portion 171 can be effectively limited. In this embodiment, the metal material of the mask 191 can assist in conducting the heat energy of the attachment body 173 to reduce the deformation of the attachment portion 171 and the attachment body 173 due to heat.

[0057] Finally, the constituent elements disclosed in the aforementioned embodiments of the present invention are merely illustrative and are not intended to limit the scope of the present invention. Replacements or changes of other equivalent elements should also be covered by the patent scope of the present invention.

[0058] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, technicians familiar with the field may make various corresponding changes and deformations based on the present invention, but these corresponding changes and deformations should all fall within the scope of protection of the claims of the present invention.

Claims

1. A mass transfer device, characterized in that: include: a base; a laser device connected to the base and capable of generating a laser beam; and A transfer head is connected to the base and receives the laser beam, and includes an attachment device and a carrier device, the attachment device includes an attachment body and multiple attachment parts, the attachment body is connected to the carrier device, the multiple attachment parts are formed on the attachment body, and can attach multiple semiconductor components, the carrier device includes a mask, the mask includes a top surface, a bottom surface and multiple light channels, the multiple light channels extend from the top surface to the bottom surface and correspond to the multiple attachment parts, wherein the laser beam is projected toward the top surface of the mask, and the multiple light channels allow the laser beam to pass through and be projected to the multiple attachment parts to weld or release the multiple semiconductor components.

2. The mass transfer device according to claim 1, characterized in that: The top surface of the mask is capable of reflecting the laser beam.

3. The mass transfer device according to claim 1, characterized in that: The carrying device includes a base plate and a fixing portion, wherein the fixing portion is connected to the base plate and can fix the mask.

4. The mass transfer device according to claim 3, characterized in that: The substrate is located between the mask and the attachment device, and the bottom surface of the mask faces the substrate.

5. The mass transfer device according to claim 4, characterized in that: The mask and the substrate maintain a distance.

6. The mass transfer device according to claim 3, characterized in that: The mask is located between the substrate and the attachment device, the top surface of the mask faces the substrate, and the bottom surface of the mask faces the attachment device.

7. The mass transfer device according to claim 1, characterized in that: The peripheral dimension of each of the plurality of attachment portions is the same as or smaller than the dimension of each of the plurality of light channels of the mask.

8. The mass transfer device according to claim 1, characterized in that: The plurality of light channels penetrate through the top surface and the bottom surface.

9. The mass transfer device according to claim 1, characterized in that: The mask includes a metal material and can reflect the laser beam.

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