Magnetron sputtering coating device

Abstract

The utility model belongs to the technical field of solar cell manufacturing, and relates to a magnetron sputtering coating device, the magnetron sputtering coating device comprises a furnace body, a magnetron sputtering mechanism, a gas supply mechanism and a plurality of heating pieces, the furnace body is provided with a reaction cavity, and the cavity wall of the reaction cavity is a continuous smooth transition surface; the magnetron sputtering mechanism is movably mounted in the reaction cavity, and the gas supply mechanism is communicated with the reaction cavity; the plurality of heating pieces are arranged on the furnace body; the plurality of heating pieces are distributed around the reaction cavity when being observed in the first direction; the first direction is the axis direction of the furnace body. According to the magnetron sputtering coating device, the cavity wall of the reaction cavity is designed into the continuous smooth transition surface, so that the risk of reactant gas accumulation caused by dead angles in the reaction cavity can be reduced, the reactant gas is uniformly distributed in the reaction cavity, the coating uniformity of the magnetron sputtering coating device is improved, and the performance of a solar cell is further improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cell manufacturing, and in particular to a magnetron sputtering coating device. Background Art

[0002] In magnetron sputtering coating technology, the uniformity of the gas in the cavity plays a critical role in the film quality and film uniformity of the coating device. However, for existing magnetron sputtering coating devices, due to the limitation of the cavity shape, there will be accumulation and unevenness of the gas in the cavity, which will greatly reduce the sputtering reaction, affect the coating quality, and affect the performance of solar cells. Utility Model Content

[0003] In view of this, it is necessary to provide a magnetron sputtering coating device to improve the technical problem of uneven distribution of reaction gas in the existing magnetron sputtering coating device, which leads to uneven distribution of doping elements.

[0004] The present application provides a magnetron sputtering coating device, which includes a furnace body, a magnetron sputtering mechanism, a gas supply mechanism and a plurality of heating elements. The furnace body is provided with a reaction chamber, and the chamber wall of the reaction chamber is a continuous smooth transition surface; the magnetron sputtering mechanism is at least partially installed in the reaction chamber, and the gas supply mechanism is connected to the reaction chamber; the plurality of heating elements are all arranged in the furnace body; when observed along a first direction, the plurality of heating elements are distributed around the reaction chamber; the first direction is the axial direction of the furnace body.

[0005] The above-mentioned magnetron sputtering coating device, by designing the cavity wall of the reaction chamber into a continuous and smooth transition surface, can reduce the risk of reaction gas accumulation due to dead corners in the reaction chamber, thereby making the reaction gas evenly distributed in the reaction chamber, improving the uniformity of the coating of the magnetron sputtering coating device, and thus improving the performance of solar cells.

[0006] In at least one embodiment, the heating element includes a quartz tube and a heating wire, the quartz tube is arranged on the outer peripheral side of the furnace body, and the heating wire extends along a spiral path and is arranged in the quartz tube.

[0007] In at least one embodiment, the gas supply mechanism includes a gas mixing component and multiple gas delivery components, the multiple gas delivery components are all connected to the gas inlet of the gas mixing component, and the gas outlet of the gas mixing component is connected to the reaction chamber; the gas delivery component is configured to deliver gas to the gas mixing component, and the gas delivered by each gas delivery component is different; the gas mixing component is configured to mix the different gases delivered by the gas delivery components to form the above-mentioned reaction gas.

[0008] In at least one embodiment, the gas delivery component includes a pipeline, a control valve and a gas flow meter, one end of the pipeline is connected to the gas inlet of the gas mixing component, and the other end of the pipeline is connected to an external gas storage device; the control valve and the gas flow meter are both installed on the pipeline, the gas flow meter is configured to monitor the flow of gas in the pipeline, and the control valve is configured to control the gas flow in the pipeline according to the monitoring information of the gas flow meter.

[0009] In at least one embodiment, the gas supply mechanism further includes a gas uniformizing component, which is installed on the magnetron sputtering mechanism and connected to the gas outlet of the gas mixing component; the gas uniformizing component is configured to transport the reaction gas into the reaction chamber.

[0010] In at least one embodiment, the gas homogenizing component is provided with n gas flow channels at intervals along the second direction, and the i-th gas flow channel is provided with 2 gas flow channels at intervals along the first direction. i exhaust holes, i = 1, 2...n; the second direction intersects the first direction; when i is 1 to n-1, 2 i The exhaust holes connect the i-th airflow channel and the i+1-th airflow channel; when i=n, ​​2 i The exhaust holes are connected to the reaction chamber; along the first direction, the distance between each exhaust hole of the i-1th air flow channel and the exhaust hole of the adjacent i-th air flow channel is equal.

[0011] In at least one embodiment, the magnetron sputtering coating device further includes a loading mechanism, which is movably mounted in the reaction chamber; the loading mechanism is configured to carry a target workpiece, and deliver the target workpiece into the reaction chamber, or remove the target workpiece from the reaction chamber.

[0012] In at least one embodiment, a central axis of the magnetron sputtering mechanism along the first direction is parallel to a central axis of the loading mechanism along the first direction.

[0013] In at least one embodiment, the loading mechanism includes a carrier plate and a driving member, the carrier plate is movably mounted in the reaction chamber, and a plurality of receiving grooves for accommodating target workpieces are arranged on the top of the carrier plate; gas recovery holes are arranged on both sides of the carrier plate, and the gas recovery holes are configured to be connected to an external gas recovery device; the driving member is installed on the outside of the furnace body and connected to the carrier plate; the driving member is configured to drive the carrier plate to extend into the reaction chamber or move out of the reaction chamber.

[0014] In at least one embodiment, the magnetron sputtering mechanism includes a base, a plurality of target materials and a plurality of magnetic groups. The base is movably arranged in a reaction chamber along a first direction, and the plurality of target materials are arranged on the base at intervals. A mounting hole is opened at one end of each target material, and the mounting hole extends along the first direction. Each magnetic group is installed in the mounting hole of the corresponding target material, and the gas uniformizing assembly is installed between two adjacent target materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1It is a structural schematic diagram of a magnetron sputtering coating device provided in an embodiment of the present application without a gas supply mechanism;

[0016] Figure 2 It is a schematic diagram of the internal structure of a magnetron coating device provided in one embodiment of the present application;

[0017] Figure 3 This is a schematic diagram of a reaction chamber provided in an embodiment of the present application. Figure 1 ;

[0018] Figure 4 This is a schematic diagram of a reaction chamber provided in an embodiment of the present application. Figure 2 ;

[0019] Figure 5 This is a schematic diagram of a reaction chamber provided in an embodiment of the present application. Figure 3 ;

[0020] Figure 6 is a schematic diagram of the cross-sectional structure of a magnetron coating device provided in one embodiment of the present application;

[0021] Figure 7 yes Figure 2 The structural schematic diagram of the heating element shown;

[0022] Figure 8 yes Figure 2 A schematic structural diagram of a magnetron sputtering mechanism is shown;

[0023] Fig. 9 yes Figure 8 A partial enlarged view of the middle Ⅸ;

[0024] Fig.10 It is a structural schematic diagram of a gas homogenizing component provided in one embodiment of the present application;

[0025] Fig.11 yes Figure 2 The structural diagram of the middle loading mechanism;

[0026] Fig.12 yes Fig.11 A partial enlarged view of point Ⅻ in the middle.

[0027] Main component symbols

[0028] 100, magnetron sputtering coating device; 10, furnace body; 11, reaction chamber; 12, plane; 13, arc surface; 20, magnetron sputtering mechanism; 21, base; 22, target material; 221, mounting hole; 23, magnetic group; 30, gas supply mechanism; 31, gas mixing component; 32, gas supply component; 321, pipeline; 322, control valve; 323, gas flow meter; 33, gas uniformity component; 331, gas flow channel; 331 1. First air flow channel; 3312. Second air flow channel; 3313. Third air flow channel; 332. Exhaust hole; 3321. First exhaust hole; 3322. Second exhaust hole; 3323. Third exhaust hole; 40. Heating element; 41. Quartz tube; 42. Heating wire; 50. Loading mechanism; 51. Carrier plate; 511. Receiving groove; 512. Gas recovery hole; 52. Driving element; 200. External gas recovery equipment.

[0029] The following specific implementation methods will further illustrate the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0030] The following specific embodiments illustrate the implementation of the present application, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. Although the description of the present application will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this application are limited to the implementation. On the contrary, the purpose of introducing the application in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present application. In order to provide a deep understanding of the present application, the following description will include many specific details. The present application can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present application, some specific details will be omitted in the description. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0031] Hereinafter, if used, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more. Positional terms such as "upper", "lower", "left", and "right" are defined relative to the orientation of the components schematically placed in the accompanying drawings. It should be understood that these directional terms are relative concepts. They are used for description and clarification relative to the components, and may change accordingly according to changes in the orientation of the components placed in the accompanying drawings.

[0032] In this application, if used, unless otherwise expressly specified and limited, the term "connection" should be understood in a broad sense, for example, "connection" can be fixed connection, detachable connection, or integrated; can be directly connected or indirectly connected through an intermediate medium. The term "and / or" used herein includes any and all combinations of one or more of the relevant listed items.

[0033] When the following embodiments are described in detail in conjunction with schematic diagrams, for ease of explanation, the diagrams showing the local structures of the devices will not be partially enlarged according to the general scale, and the schematic diagrams are only examples and should not limit the scope of protection of this application.

[0034] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below in conjunction with the accompanying drawings.

[0035] The present application embodiment provides a magnetron sputtering coating device 100, such as Figure 1 and Figure 2 As shown, the magnetron sputtering coating device 100 comprises a furnace body 10, a magnetron sputtering mechanism 20 and a gas supply mechanism 30. The furnace body 10 is provided with a reaction chamber 11, and the chamber wall of the reaction chamber 11 is a continuous smooth transition surface.

[0036] It can be understood that after the reaction gas enters the reaction chamber 11, the reaction gas flows along the cavity wall of the reaction chamber 11. Since the cavity wall of the reaction chamber 11 is a continuous smooth transition surface, the continuous smooth transition surface can reduce the risk of dead corners in the reaction chamber 11 and cause the accumulation of reaction gas. Therefore, the uniformity of the reaction gas distribution in the reaction chamber 11 is improved, which provides a basis for the subsequent sputtering reaction with the magnetron sputtering mechanism 20.

[0037] It should be noted that the cavity wall of the reaction chamber 11 includes a peripheral wall surface and two end surfaces arranged at both ends of the peripheral wall surface, and the peripheral wall surface and the two end surfaces together enclose the above-mentioned reaction chamber 11. Among them, the peripheral wall surface of the reaction chamber 11 is the surface mainly facing the magnetron sputtering mechanism 20, and the peripheral wall surface of the reaction chamber 11 is a continuous smooth transition surface. Of course, the two ends of the reaction chamber 11 can also be connected to the peripheral wall surface by a smooth transition surface.

[0038] In some embodiments, Figure 3 As shown, the peripheral wall surface of the reaction chamber 11 is a continuous and smoothly transitioned annular surface, similar to the inner wall of a circular tube.

[0039] In some embodiments, Figure 4 As shown, the peripheral wall surface of the reaction chamber 11 includes a plurality of planes 12 and a plurality of arc surfaces 13, which are alternately connected to form a continuous smooth transition surface, similar to setting the corners of the rectangular chamber wall as arc surfaces 13 for smooth transition.

[0040] In some embodiments, Figure 5 As shown, the peripheral wall surface of the reaction chamber 11 is a continuous and smoothly transitioned elliptical surface, similar to the inner wall of an elliptical tube.

[0041] It is worth noting that in other embodiments, the peripheral wall surface of the reaction chamber 11 may also be other continuous smooth transition surfaces, which is not limited in the present application, and those skilled in the art may select according to actual conditions, as long as the peripheral wall surface of the reaction chamber 11 can ensure a continuous and smooth transition.

[0042] In some embodiments, Figure 2 As shown, the magnetron sputtering mechanism 20 is at least partially installed in the reaction chamber 11, and the gas supply mechanism 30 is connected to the reaction chamber 11. The gas supply mechanism 30 is configured to deliver reaction gas to the reaction chamber 11, and the magnetron sputtering mechanism 20 is configured to react with the reaction gas to deposit a thin film on the surface of the target workpiece. It should be noted that the target workpiece can be a wafer or a silicon wafer waiting for coating, and this application does not limit this.

[0043] It can be understood that when coating the target workpiece, the technician first places the target workpiece in the reaction chamber 11, and then the gas supply mechanism 30 introduces the reaction gas into the reaction chamber 11, and the reaction gas flows along the cavity wall of the reaction chamber 11. Then, the magnetron sputtering mechanism 20 is started, and the magnetron sputtering mechanism 20 and the reaction gas undergo a sputtering reaction, thereby depositing a thin film on the surface of the target workpiece.

[0044] In summary, the magnetron sputtering coating device 100 in the present application has at least the following beneficial effects: compared with the existing square or rectangular reaction chamber 11, the present application can reduce the risk of reaction gas accumulation due to dead corners in the reaction chamber 11 by designing the chamber wall of the reaction chamber 11 as a continuous smooth transition surface. As a result, the reaction gas is evenly distributed in the reaction chamber 11, the uniformity of the coating of the magnetron sputtering coating device 100 is improved, and the performance of the solar cell is thereby improved.

[0045] In some embodiments, Figure 1 and Figure 2 As shown, the magnetron sputtering coating device 100 further includes a plurality of heating elements 40 , which are all disposed on the furnace body 10 . The heating elements 40 are configured to heat the furnace body 10 to provide a required temperature for the sputtering reaction in the reaction chamber 11 .

[0046] In some embodiments, the first direction is defined as the axial direction of the furnace body 10. When viewed along the first direction, the plurality of heating elements 40 are distributed around the reaction chamber 11. In other words, the plurality of heating elements 40 are disposed around the outer peripheral side of the reaction chamber 11.

[0047] It should be noted that by surrounding the outer peripheral side of the reaction chamber 11 with a plurality of heating elements 40, the uniformity of heating of the entire furnace body 10 can be improved, and the risk of having a part of the reaction chamber 11 with a high temperature and another part with a low temperature can be reduced, thereby improving the uniformity and reaction efficiency of the sputtering reaction in the reaction chamber 11.

[0048] In other embodiments, the heating element 40 may also be arranged in other ways, which is not limited in the present application, and those skilled in the art may choose according to actual conditions.

[0049] In some embodiments, Figure 7 As shown, the heating element 40 is a quartz heating tube. The heating element 40 includes a heating wire 42 and a quartz tube 41. The quartz tube 41 is arranged on the outer peripheral side of the furnace body 10, and the heating wire 42 extends along a spiral path and is arranged inside the quartz tube 41. In addition, both ends of the heating wire 42 are respectively connected to an external thermocouple (not shown) and an external heating power line (not shown) to ensure that the heating wire 42 can work normally.

[0050] It is worth noting that compared with the existing method of winding the heating wire 42 around the quartz tube 41, the present application adopts the method of setting the heating wire 42 inside the quartz tube 41, which can not only protect the heating wire 42 through the quartz tube 41 to increase the service life of the heating wire 42, but also reduce the problem of difficult maintenance of the heating wire 42 wrapped around the quartz tube 41, making the maintenance of the heating wire 42 more convenient, and the technicians can directly disassemble the quartz tube 41 and replace the heating wire 42.

[0051] In some embodiments, Figure 2 As shown, the gas supply mechanism 30 includes a gas mixing component 31 and a plurality of gas supply components 32, and the plurality of gas supply components 32 are all connected to the gas inlet of the gas mixing component 31, and the gas outlet of the gas mixing component 31 is connected to the reaction chamber 11. It should be noted that the number of gas supply components 32 can be selected according to actual conditions, and this application does not limit this, and skilled technicians can select according to actual conditions.

[0052] The gas supply assembly 32 is configured to supply gas to the gas mixing assembly 31, and each gas supply assembly 32 supplies different gases, such as hydrogen, oxygen, argon, etc. The gas mixing assembly 31 is configured to mix the different gases supplied by the gas supply assembly 32 to form the above-mentioned reaction gas.

[0053] It can be understood that before the sputtering reaction begins, the multiple gas supply components 32 first deliver different types of gases to the gas mixing component 31. Then, the gas mixing component 31 evenly mixes the different types of gases to form a reaction gas. Then, the gas mixing component 31 delivers the reaction gas to the reaction chamber 11 for use in the sputtering reaction.

[0054] Through the cooperation of the gas mixing component 31 and multiple gas supply components 32, different types of gases can be mixed in advance to improve the uniformity of gas mixing in the reaction gas, ensure that the gas structure composition at various locations in the reaction chamber 11 is the same, and thus improve the effect of the sputtering reaction in the reaction chamber 11.

[0055] In some embodiments, Figure 2 As shown, the gas supply component 32 includes a pipeline 321, a control valve 322 and a gas flow meter 323. One end of the pipeline 321 is connected to the air inlet of the gas mixing component 31, and the other end of the pipeline 321 is connected to an external gas storage device.

[0056] The control valve 322 and the gas flow meter 323 are both installed in the pipeline 321 . The gas flow meter 323 is configured to monitor the flow of gas in the pipeline 321 , and the control valve 322 is configured to control the gas flow in the pipeline 321 according to the monitoring information of the gas flow meter 323 .

[0057] It is understandable that when each gas delivery component 32 delivers gas to the gas mixing component 31, the technician can monitor the ratio of various gas delivery through the gas flow meter 323. If there is an imbalance in the ratio, the technician adjusts the gas flow of the corresponding pipeline 321 through the control valve 322.

[0058] It should be noted that, through the cooperation of the control valve 322 and the gas flow meter 323, precise control of the gas components in the reaction gas can be achieved to ensure that the ratio of various gases in the reaction gas meets the preset ratio, thereby improving the uniformity and stability of the sputtering reaction in the reaction chamber 11.

[0059] For example, the preset reaction gas ratio of argon: hydrogen: hydrogen sulfide is 3:2:2. When the gas flow meter 323 detects that the argon content in the reaction gas is too low, resulting in the ratio of the reaction gas in the gas mixing component 31 not meeting the above ratio, the technician can increase the gas flow of argon by adjusting the control valve 322 in the argon delivery pipeline 321; and vice versa.

[0060] In some embodiments, Figure 2 , Figure 8 and Fig. 9 As shown, the gas supply mechanism 30 further includes a gas homogenizing component 33, which is installed on the magnetron sputtering mechanism 20 and connected to the gas outlet of the gas mixing component 31. The gas homogenizing component 33 is configured to deliver the reaction gas to the reaction chamber 11. It can be understood that when delivering the reaction gas to the reaction chamber 11, the gas mixing component 31 first delivers the reaction gas to the gas homogenizing component 33, and then the gas homogenizing component 33 delivers the reaction gas to the reaction chamber 11.

[0061] It should be noted that, by setting up the gas homogenizing component 33, the reaction gas can be evenly delivered to the reaction chamber 11, thereby improving the uniformity of the reaction gas distribution in the reaction chamber 11 and reducing the risk of the reaction gas being concentrated at the air inlet and sparse far from the air inlet in the reaction chamber 11.

[0062] In some embodiments, the second direction is defined as the radial direction of the furnace body 10, and the second direction is perpendicular to the first direction. In other embodiments, the second direction may not be perpendicular to the first direction, and this application does not limit this, and those skilled in the art may choose according to actual conditions.

[0063] The air homogenizing component 33 is provided with n air flow channels 331 at intervals along the second direction, and the i-th air flow channel 331 is provided with 2 air flow channels 331 at intervals along the first direction. i There are 332 exhaust holes, i=1, 2, ... n. When i is 1 to n-1, 2 i The exhaust holes 332 connect the i-th air flow channel 331 and the i+1-th air flow channel 331; when i=n, ​​2 i The exhaust holes 332 are connected to the reaction chamber 11. Along the first direction, the distance between each exhaust hole 332 of the (i-1)th air flow channel 331 and the exhaust hole 332 of the adjacent (i)th air flow channel 331 is equal.

[0064] It should be noted that, through the structural design of the above-mentioned gas uniformity component 33, not only can the reaction gas be evenly distributed and transported to the reaction chamber 11, thereby improving the uniformity of the reaction gas distribution in the reaction chamber 11, but also the coverage area during the reaction gas input can be increased, thereby reducing the risk of the reaction gas being concentrated at the air inlet and sparse at the air inlet in the reaction chamber 11.

[0065] For example, Fig.10 As shown, the gas homogenizing component 33 is provided with three gas flow channels 331 at intervals along the second direction, that is, n=3. The three gas flow channels 331 are respectively a first gas flow channel 3311, a second gas flow channel 3312 and a third gas flow channel 3313. It is worth noting that the first gas flow channel 3311 is configured to be connected to the gas outlet of the gas mixing component 31.

[0066] Among them, the first airflow channel 33111 is provided with two first exhaust holes 3321 at intervals along the first direction, the second airflow channel 3312 is provided with four second exhaust holes 3322 along the first direction, and the third airflow channel 3313 is provided with eight third exhaust holes 3323 along the first direction. The two first exhaust holes 3321 connect the first airflow channel 3311 and the second airflow channel 3312, the four second exhaust holes 3322 connect the second airflow channel 3312 and the third airflow channel 3313, and the eight third exhaust holes 3323 connect the third airflow channel 3313 and the reaction chamber 11.

[0067] In addition, along the first direction, the first exhaust holes 3321 in the first airflow channel 3311 and the adjacent second exhaust holes 3322 in the second airflow channel 3312 are equidistant from each other, and the second exhaust holes 3322 in the second airflow channel 3312 and the adjacent third exhaust holes 3323 in the third airflow channel 3313 are equidistant from each other.

[0068] It can be understood that when the gas mixing component 31 delivers the reaction gas to the gas homogenizing component 33, the reaction gas first enters the first gas flow channel 3311, and then enters the second gas flow channel 3312 through the two first exhaust holes 3321. After entering the second gas flow channel 3312, the reaction gas enters the third gas flow channel 3313 through the four second exhaust holes 3322. After entering the third gas flow channel 3313, the reaction gas enters the reaction chamber 11 through the eight third exhaust holes 3323.

[0069] In short, the reaction gas first passes through the first exhaust hole 3321332 and enters the second air flow channel 3312 in two parts; then passes through the second exhaust hole 3322332 and enters the third air flow channel 3313 in four parts; finally, passes through the third exhaust hole 3323332 and enters the reaction chamber 11 in eight parts.

[0070] In other embodiments, the number of the air flow channels 331 may be 4, 5 or other numbers. This application does not limit this, and those skilled in the art may choose according to actual conditions.

[0071] In some embodiments, Figure 2 and Fig.11 As shown, the magnetron sputtering coating device 100 further includes a loading mechanism 50, which is movably mounted on the reaction chamber 11. The loading mechanism 50 is configured to carry a target workpiece (not shown) and deliver the target workpiece into the reaction chamber 11, or remove the target workpiece from the reaction chamber 11. It should be noted that the automatic loading or unloading of the target workpiece can be achieved through the setting of the loading mechanism 50.

[0072] Specifically, the loading mechanism 50 includes a loading plate 51 and a driving member 52. The loading plate 51 is movably mounted on the reaction chamber 11, and a plurality of receiving grooves 511 for receiving target workpieces are provided on the top of the loading plate 51. The driving member 52 is mounted on the outside of the furnace body 10 and connected to the loading plate 51. The driving member 52 is configured to drive the loading plate 51 to extend into the reaction chamber 11 or to move out of the reaction chamber 11.

[0073] It can be understood that when the target workpiece needs to be installed, the driving member 52 drives the carrier 51 to move out of the reaction chamber 11; after the target workpiece is installed, the driving member 52 controls the carrier 51 to move into the reaction chamber 11. It should be noted that the automatic loading or unloading of the target workpiece can be achieved through the cooperation of the carrier 51 and the driving member 52, thereby greatly improving the automation degree and coating efficiency of the magnetron sputtering coating device 100.

[0074] In some embodiments, Figure 2 As shown, the central axis of the magnetron sputtering mechanism 20 along the first direction is parallel to the central axis of the loading mechanism 50 along the first direction. It should be noted that during the sputtering reaction, the sputtered atoms in the magnetron sputtering mechanism 20 are directly deposited on the target workpiece to form a thin film layer.

[0075] Therefore, by arranging the central axis of the magnetron sputtering mechanism 20 along the first direction parallel to the central axis of the loading mechanism 50 along the first direction, it is possible to ensure that the distance between the magnetron sputtering mechanism 20 and any target workpiece in the loading mechanism 50 is the same, thereby reducing the risk of different film thicknesses deposited on the target workpieces corresponding to the two parts of the magnetron sputtering mechanism 20 due to one part of the magnetron sputtering mechanism 20 being close to the loading mechanism 50 and the other part of the magnetron sputtering mechanism 20 being far away from the loading mechanism 50.

[0076] In some embodiments, Figure 2 , Fig.11 and Fig.12 As shown, gas recovery holes 512 are provided on both sides of the carrier plate 51, and the gas recovery holes 512 are configured to be connected to the external gas recovery device 200. Specifically, there are multiple gas recovery holes 512, and the multiple gas recovery holes 512 are spaced apart on both sides of the carrier plate 51 along the first direction.

[0077] In addition, the gas recovery holes 512 on both sides of the carrier plate 51 correspond to each other. In other words, the gas recovery holes 512 on both sides are symmetrically arranged. The external gas recovery device 200 collects the exhaust gas in the reaction chamber 11 through the multiple gas recovery holes 512 on both sides of the carrier plate 51.

[0078] It should be noted that, compared with a single or one-sided gas recovery hole 512, multiple gas recovery holes 512 are provided on both sides of the carrier plate 51 in the present application, which can not only improve the efficiency of gas recovery, but also ensure that the exhaust gas in the reaction chamber 11 is discharged at a uniform speed, thereby reducing the risk of gas disturbance caused by different exhaust gas flow rates due to different distances from the exhaust gas to the gas recovery hole 512, thereby improving the uniformity of the coating of the magnetron sputtering coating device 100.

[0079] In some embodiments, Figure 6 and Figure 8 As shown, the magnetron sputtering mechanism 20 includes a base 21, a plurality of targets 22 and a plurality of magnetic groups 23. The base 21 is movably disposed in the reaction chamber 11 along a first direction, and a plurality of targets 22 are spaced apart from the base 21. The targets 22 are specifically materials for reactive coating, such as silicon targets or doped silicon materials, and anti-reflection film series materials.

[0080] In some embodiments, the target 22 is configured to rotate around its own central axis, so that the sputtering reaction between the target 22 and the reaction gas can be more uniform, thereby further improving the uniformity of the coating of the magnetron sputtering coating device 100.

[0081] In some embodiments, a mounting hole 221 is formed at one end of each target 22, the mounting hole 221 extends along a first direction, and each magnetic group 23 is mounted in the mounting hole 221 of the corresponding target 22. The magnetic group 23 is configured to control the direction of the magnetic pole to maintain the magnetic field to magnetically cut the cathode target 22.

[0082] In some embodiments, Figure 8 As shown, the gas homogenizing assembly 33 is installed between two adjacent target materials 22. It can be understood that when plasma discharge occurs, the reaction gas first contacts the target material 22. When the reaction gas is ionized into a plasma state, the magnetic group 23 inside the target material 22 controls the ions to collide with the target material 22, so as to sputter out the atoms of the target material 22 and deposit them on the target workpiece to form a thin film.

[0083] It should be noted that by arranging the gas uniformizing component 33 between two adjacent target materials 22, on the one hand, the reaction gas can be brought closer to the target material 22, saving gas volume, that is, saving gas consumption of the magnetron sputtering coating device 100; on the other hand, the structure of the magnetron sputtering mechanism 20 can be made more compact, reducing the volume of the magnetron sputtering coating device 100.

[0084] The coating process of the magnetron sputtering coating device 100 in the present application is as follows: the target workpiece is loaded onto the loading mechanism 50 and sent into the reaction chamber 11; after the loading mechanism 50 enters the reaction chamber 11, the reaction chamber 11 is vacuum-treated, and the furnace body 10 is heated by the external heating element 40 at the same time.

[0085] After the temperature in the reaction chamber 11 rises to the target temperature, the gas is delivered to the reaction chamber 11 through the gas supply mechanism 30 to pre-clean the reaction chamber 11 and reduce the contamination of impurities. After the pre-cleaning is completed, the gas supply mechanism 30 passes the reaction gas into the reaction chamber 11 and turns on the magnetron sputtering mechanism 20 so that the magnetron sputtering mechanism 20 and the reaction gas undergo a sputtering reaction to deposit a thin film on the target workpiece.

[0086] After the reaction is completed, the magnetron target 22 mechanism is turned off, and the supply of reaction gas is stopped, and the target workpiece after coating is cooled. After the target workpiece after coating is cooled, the target workpiece after coating can be annealed to improve the performance of the target workpiece after coating. Finally, the target workpiece after coating can be removed from the reaction chamber 11.

[0087] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the disclosure scope of the present application.

Claims

1. A magnetron sputtering coating device, characterized in that: The magnetron sputtering coating device comprises: A furnace body, wherein the furnace body is provided with a reaction chamber, and the chamber wall of the reaction chamber is a continuous smooth transition surface; A magnetron sputtering mechanism, wherein the magnetron sputtering mechanism is at least partially installed in the reaction chamber; A gas supply mechanism, the gas supply mechanism is connected to the reaction chamber; A plurality of heating elements are disposed on the furnace body; when viewed along a first direction, the plurality of heating elements are distributed around the reaction chamber; and the first direction is the axial direction of the furnace body.

2. The magnetron sputtering coating device according to claim 1, characterized in that: The heating element comprises a quartz tube and a heating wire. The quartz tube is arranged on the outer peripheral side of the furnace body, and the heating wire is extended along a spiral path and arranged in the quartz tube.

3. The magnetron sputtering coating device according to claim 1, characterized in that: The gas supply mechanism includes a gas mixing component and a plurality of gas supply components, the plurality of gas supply components are all connected to the gas inlet of the gas mixing component, and the gas outlet of the gas mixing component is connected to the reaction chamber; The gas delivery components are configured to deliver gas to the gas mixing components, and each gas delivery component delivers different gases; the gas mixing component is configured to mix the different gases delivered by the gas delivery components to form a reaction gas.

4. The magnetron sputtering coating device according to claim 3, characterized in that: The gas supply assembly includes a pipeline, a control valve and a gas flow meter, one end of the pipeline is connected to the gas inlet of the gas mixing assembly, and the other end of the pipeline is connected to an external gas storage device; The control valve and the gas flow meter are both installed in the pipeline. The gas flow meter is configured to monitor the flow of gas in the pipeline, and the control valve is configured to control the gas flow in the pipeline according to the monitoring information of the gas flow meter.

5. The magnetron sputtering coating device according to claim 3, characterized in that: The gas supply mechanism also includes a gas uniformizing component, which is installed on the magnetron sputtering mechanism and connected to the gas outlet of the gas mixing component; the gas uniformizing component is configured to transport the reaction gas into the reaction chamber.

6. The magnetron sputtering coating device according to claim 5, characterized in that: The air homogenizing component is provided with n air flow channels at intervals along the second direction, and the i-th air flow channel is provided with 2 air flow channels at intervals along the first direction. i exhaust holes, i=1, 2, ..., n; the second direction intersects the first direction; When i is 1 to n-1, 2 i The exhaust holes are connected to the i-th air flow channel and the i+1-th air flow channel; when i=n, ​​2 i The exhaust holes are connected to the reaction chamber; along the first direction, the spacing between each exhaust hole in the (i-1)th air flow channel and the exhaust hole in the adjacent (i)th air flow channel is equal.

7. The magnetron sputtering coating device according to any one of claims 1 to 6, characterized in that: The magnetron sputtering coating device also includes a loading mechanism, which is movably installed in the reaction chamber; the loading mechanism is configured to carry a target workpiece and deliver the target workpiece into the reaction chamber or remove the target workpiece from the reaction chamber.

8. The magnetron sputtering coating device according to claim 7, characterized in that: The central axis of the magnetron sputtering mechanism along the first direction is parallel to the central axis of the loading mechanism along the first direction.

9. The magnetron sputtering coating device according to claim 7, characterized in that: The material loading mechanism comprises a loading plate and a driving member, wherein the loading plate is movably mounted on the reaction chamber, and a plurality of receiving grooves for receiving the target workpiece are arranged on the top of the loading plate; gas recovery holes are arranged on both sides of the loading plate, and the gas recovery holes are configured to be connected to an external gas recovery device; The driving member is installed on the outside of the furnace body and connected to the carrier plate; the driving member is configured to drive the carrier plate to extend into the reaction chamber or to move out of the reaction chamber.

10. The magnetron sputtering coating device according to claim 5, characterized in that: The magnetron sputtering mechanism includes a base, multiple target materials and multiple magnetic groups. The base is movably arranged in the reaction chamber along the first direction, and the multiple target materials are arranged on the base at intervals. A mounting hole is opened at one end of each target material, and the mounting hole extends along the first direction. Each magnetic group is installed in the mounting hole corresponding to the target material, and the gas uniformizing assembly is installed between two adjacent target materials.

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