Compression-resistant composite quantum dot diffusion film
The pressure-resistant composite quantum dot diffusion film addresses the issue of quantum dot damage by incorporating multiple protective layers, ensuring durability and maintaining performance.
Patent Information
- Application Number
- CN202421024702.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-13
- Publication Date
- 2024-12-24
- Estimated Expiration
- 2034-05-13
AI Technical Summary
Quantum dots in conventional quantum films are prone to damage when squeezed, affecting their performance due to lack of pressure resistance.
A pressure-resistant composite quantum dot diffusion film comprising a PET substrate layer, light-guiding layer, diffusion part, pressure-resistant layer, pressure-resistant cavities, wear-resistant layer, and additional layers to enhance durability and protection.
The film provides enhanced wear-resistance and pressure-resistance, protecting quantum dots from damage and maintaining their performance.
Smart Images

Figure CN222232708U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of optical films, in particular to a pressure-resistant composite quantum dot diffusion film. Background Art
[0002] With the development of science and technology and the progress of society, more and more requirements are placed on electronic products. Lightness, power saving and high definition have become the research and development hotspots of various manufacturers. The number of LEDs is decreasing and the thickness of products is getting thinner. In order to improve the color gamut of displays, quantum dot technology is gradually being applied to displays. Quantum dot display technology has no size restrictions and can be used on small screens as well as large screens.
[0003] Quantum dots are composed of a limited number of atoms, and the three dimensions are all in the nanometer order of magnitude. Quantum dots are generally spherical or quasi-spherical, with a stable diameter of 2-20nm. They are aggregates of atoms and molecules at the nanoscale, and can be composed of one semiconductor material, such as elements of group IIB.VIA or group IIIA.VA, or two or more semiconductor materials. Because quantum dots cannot be exposed to the air, the quantum film conventionally used in backlight technology is attached to the diffusion film. When the quantum film is squeezed, it is easy to damage the quantum dots in the quantum film, thereby affecting the efficiency of quantum dot diffusion. For this reason, we have proposed a pressure-resistant composite quantum dot diffusion film. Utility Model Content
[0004] The utility model is to solve the shortcomings of the prior art and propose a pressure-resistant composite quantum dot diffusion film, which solves the problem that the quantum dots are squeezed in the diffusion film and affect their normal performance.
[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:
[0006] A pressure-resistant composite quantum dot diffusion film comprises a PET substrate layer, a light-guiding layer, a diffusion part, a pressure-resistant layer, a plurality of pressure-resistant cavities and a wear-resistant layer, wherein the thickness of the PET substrate layer is 1 μm-3 μm; the light-guiding layer is arranged on the upper side of the PET substrate layer; the diffusion part is arranged on the upper side of the light-guiding layer; the pressure-resistant layer is arranged on the upper side of the diffusion part; a plurality of the pressure-resistant cavities are arranged in the pressure-resistant layer; and the wear-resistant layer is arranged on the upper side of the pressure-resistant layer.
[0007] Through the above technical solution, the wear-resistant layer provides a wear-resistant function, and the pressure-resistant cavity cooperates with the pressure-resistant layer to provide a pressure-resistant protection function for the diffusion part.
[0008] Preferably, the diffusion part includes a light diffusion layer A, which is arranged on the upper side of the light guiding layer, a quantum dot layer is arranged on the upper side of the light diffusion layer A, a diffusion particle layer is arranged on the upper side of the quantum dot layer, and a light diffusion layer B is arranged on the upper side of the diffusion particle layer.
[0009] Through the above technical solution, the diffusion part provides a quantum dot light diffusion function.
[0010] Preferably, a plurality of diffusion grooves are provided on both the upper and lower sides of the quantum dot layer.
[0011] Through the above technical solution, the diffusion groove is used to increase the diffusion area.
[0012] Preferably, the quantum dot layer is composed of epoxy resin glue and a plurality of quantum dots, and the plurality of quantum dots are arranged inside the resin glue.
[0013] Through the above technical solution, the epoxy resin glue provides a protective function for the quantum dots, preventing the quantum dots from being squeezed and damaged, which would affect their own functions.
[0014] Preferably, a light-enhancing layer is disposed on the lower side of the PET substrate layer, and the thickness of the light-enhancing layer is 1 μm-2.5 μm.
[0015] Through the above technical solution, the brightness enhancement layer provides a brightness enhancement effect.
[0016] Preferably, a heat dissipation layer is arranged at the lower side of the light-enhancing layer, and a mesh-shaped hollow structure is arranged inside the heat dissipation layer.
[0017] Through the above technical solution, the heat dissipation layer provides a heat dissipation function.
[0018] Preferably, an adhesive layer is provided on the lower side of the heat dissipation layer, and UV glue is provided on the lower surface of the adhesive layer.
[0019] Through the above technical solution, the adhesive layer provides a sticky function.
[0020] In summary, in the present invention, the wear-resistant layer provides a wear-resistant function, and the pressure-resistant cavity cooperates with the pressure-resistant layer to provide a pressure-resistant protection function for the diffusion part.
[0021] In the utility model, the epoxy resin glue provides a protection function for the quantum dots, thereby preventing the quantum dots from being squeezed and damaged, thereby affecting their own functions.
[0022] In the utility model, the diffusion part provides a function of diffusing quantum dot light. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 It is a schematic diagram of the structure of the utility model in cross section.
[0024] In the figure: 1. PET substrate layer; 2. Light guide layer; 3. A light diffusion layer; 4. Quantum dot layer; 5. Diffusion particle layer; 6. B light diffusion layer; 7. Diffusion groove; 8. Pressure-resistant layer; 9. Pressure-resistant cavity; 10. Wear-resistant layer; 11. Brightness enhancement layer; 12. Heat dissipation layer; 13. Adhesive layer. DETAILED DESCRIPTION
[0025] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.
[0026] like Figure 1 As shown, a pressure-resistant composite quantum dot diffusion film includes a PET substrate layer 1, a light guide layer 2, a diffusion part, a pressure-resistant layer 8, a plurality of pressure-resistant cavities 9 and a wear-resistant layer 10. The thickness of the PET substrate layer 1 is 1 μm-3 μm. The light guide layer 2 is disposed on the upper side of the PET substrate layer 1 by coating with glue, and the diffusion part is disposed on the upper side of the light guide layer 2.
[0027] The diffusion part includes a light diffusion layer A 3, which is disposed on the upper side of the light guide layer 2 by coating with glue, and a quantum dot layer 4 is disposed on the upper side of the light diffusion layer A 3 by coating with glue, and a plurality of diffusion grooves 7 are disposed on the upper and lower sides of the quantum dot layer 4, and the quantum dot layer 4 is composed of epoxy resin glue and a plurality of quantum dots, and the plurality of quantum dots are disposed inside the resin glue.
[0028] The upper side of the quantum dot layer 4 is provided with a diffusion particle layer 5 through glue coating, the upper side of the diffusion particle layer 5 through glue coating is provided with a B light diffusion layer 6, the pressure-resistant layer 8 is provided on the upper side of the diffusion part, a plurality of pressure-resistant cavities 9 are provided in the pressure-resistant layer 8, the wear-resistant layer 10 is provided on the upper side of the pressure-resistant layer 8 through glue coating, the lower side of the PET substrate layer 1 is provided with a light-enhancing layer 11 through glue coating, the thickness of the light-enhancing layer 11 is 1μm-2.5μm, the lower side of the light-enhancing layer 11 is provided with a heat dissipation layer 12 through glue coating, the heat dissipation layer 12 is provided with a mesh hollow structure, the lower side of the heat dissipation layer 12 is provided with an adhesive layer 13, and the lower side surface of the adhesive layer 13 is provided with UV glue,
[0029] The A light diffusion layer 3 and the B light diffusion layer 6 are made of tetrafluoroethylene, the pressure-resistant layer 8 is made of acrylic material, the wear-resistant layer 10 is made of TPU polyurethane, the light-enhancing layer 11 is made of polycarbonate (PC) or polyvinyl alcohol (PVA), and the heat dissipation layer 12 is made of polymer nanocomposite material.
[0030] It should be noted that quantum dots (QDs) are tiny semiconductor particles a few nanometers in size that have different optical and electronic properties from larger light-emitting diode particles. They are at the heart of nanotechnology. When quantum dots are irradiated with ultraviolet light, some electrons receive enough energy to break away from atoms. This ability allows them to move around the nanoparticles, creating a conduction band in which electrons can freely move through the material and conduct electricity. When these electrons fall back into the outer orbit (valence band) surrounding the atom, they emit light. The color of the light depends on the energy difference between the conduction band and the valence band. In the material, A field of science in which nanoscale semiconductor materials tightly confine electrons or electron holes. Quantum dots are sometimes called artificial atoms, emphasizing their strangeness. They have bound, discrete electronic states like naturally occurring atoms or molecules. The properties of quantum dots are between those of bulk semiconductors and discrete atoms or molecules. Their optoelectronic properties vary with size and shape. Larger quantum dots with diameters of 5–6 nanometers emit longer wavelengths, such as orange or red, while smaller quantum dots (2–3nm) emit shorter wavelengths, such as blue and green. The specific color and size depend on the exact composition of the QD.
[0031] The glue is the glue used for traditional film preparation and coating.
[0032] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.
Claims
1. A compressive composite quantum dot diffusion film, characterized in that: It comprises a PET substrate layer (1), wherein the thickness of the PET substrate layer (1) is 1 μm-3 μm; A light guide layer (2), wherein the light guide layer (2) is arranged on the upper side of the PET substrate layer (1); A diffusion portion, the diffusion portion being arranged on the upper side of the light guide layer (2); A pressure-resistant layer (8), the pressure-resistant layer (8) being arranged on the upper side of the diffusion portion; A plurality of pressure-resistant cavities (9), wherein the plurality of pressure-resistant cavities (9) are arranged in the pressure-resistant layer (8); A wear-resistant layer (10), wherein the wear-resistant layer (10) is arranged on the upper side of the pressure-resistant layer (8).
2. The pressure-resistant composite quantum dot diffusion film according to claim 1, characterized in that: The diffusion part comprises an A light diffusion layer (3), wherein the A light diffusion layer (3) is arranged on the upper side of the light guide layer (2), a quantum dot layer (4) is arranged on the upper side of the A light diffusion layer (3), a diffusion particle layer (5) is arranged on the upper side of the quantum dot layer (4), and a B light diffusion layer (6) is arranged on the upper side of the diffusion particle layer (5).
3. The pressure-resistant composite quantum dot diffusion film according to claim 2, characterized in that: A plurality of diffusion grooves (7) are provided on both the upper and lower sides of the quantum dot layer (4).
4. The pressure-resistant composite quantum dot diffusion film according to claim 2, characterized in that: The quantum dot layer (4) is composed of epoxy resin glue and a plurality of quantum dots, and the plurality of quantum dots are arranged inside the resin glue.
5. The pressure-resistant composite quantum dot diffusion film according to claim 1, characterized in that: A light-enhancing layer (11) is provided on the lower side of the PET substrate layer (1), and the thickness of the light-enhancing layer (11) is 1 μm-2.5 μm.
6. The pressure-resistant composite quantum dot diffusion film according to claim 5, characterized in that: A heat dissipation layer (12) is arranged on the lower side of the light-enhancing layer (11), and a mesh-shaped hollow structure is arranged inside the heat dissipation layer (12).
7. The pressure-resistant composite quantum dot diffusion film according to claim 6, characterized in that: An adhesive layer (13) is provided on the lower side of the heat dissipation layer (12), and a UV adhesive is provided on the lower surface of the adhesive layer (13).
