Flat packaging crimping type extraction electrode insulated gate bipolar transistor element

Abstract

The utility model belongs to the technical field of transistors, and particularly relates to a flat packaging crimping type extraction electrode insulated gate bipolar transistor element, which comprises a shell, a mounting hole is arranged in the shell, a chip mould frame is arranged in the mounting hole, a chip body is arranged at the top of the chip mould frame, a gate pole mould frame is arranged below the chip mould frame, and the gate pole mould frame is arranged below the chip mould frame. Through the arrangement of the connecting rods, the blocking pieces, the through grooves and the cavities, when elements in the equipment need to be replaced or maintained, the two connecting rods are pulled in the approaching direction at the same time, the connecting rods drive the clamping blocks and the sliding blocks to move, the sliding blocks extrude the springs on one sides, and when the clamping blocks move to the tail ends of the cavities and are attached to the inner walls of one sides of the cavities, the clamping blocks are clamped in the through grooves. The upper lead-out electrode plate can be taken down by pulling the upper lead-out electrode plate upwards, and related personnel can replace or maintain elements in the equipment, so that a traditional crimping mode is replaced, the upper lead-out electrode plate can be quickly disassembled and assembled, and the subsequent maintenance difficulty is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of transistors, in particular to a flat-plate package press-connection type lead-out electrode insulated gate bipolar transistor element. Background Art

[0002] Bipolar transistor is a current control device in which electrons and holes participate in conduction at the same time. Compared with field effect transistors, bipolar transistors have slow switching speed, small input impedance, and high power consumption. Bipolar transistors are small in size, light in weight, consume less power, have long life, and are highly reliable. They have been widely used in broadcasting, television, communications, radar, computers, automatic control devices, electronic instruments, household appliances and other fields, playing the roles of amplification, oscillation, and switching.

[0003] However, the existing bipolar transistors have an electrode plate and a shell that are pressed together for installation, which makes it inconvenient to disassemble them later, thereby increasing the difficulty of subsequent maintenance. At the same time, since an insulating sheet is installed between the tube core and the base plate, the thermal resistance between the element tube core and the base plate is increased, and the heat dissipation capacity of the element is reduced. Therefore, a flat-panel package press-fit electrode insulated gate bipolar transistor element is proposed. Utility Model Content

[0004] The utility model aims to solve the shortcomings in the prior art and proposes a flat-plate package press-connection type lead-out electrode insulated gate bipolar transistor element.

[0005] In order to achieve the above-mentioned purpose, the utility model adopts the following technical scheme: a flat-panel package press-fit lead-out electrode insulated gate bipolar transistor element, comprising a shell, a mounting hole is provided in the shell, a chip mold frame is provided in the mounting hole, a chip body is provided on the top of the chip mold frame, a gate mold frame is provided below the chip mold frame, a gate line is provided on the gate mold frame, and the gate line is connected to the gate circuit on the chip body, two connecting plates are provided on the top of the shell, a cavity is provided on the top of the connecting plate, a limiting groove is provided on the top of the cavity, an upper lead-out electrode plate is provided on the top of the connecting plate, the bottom of the upper lead-out electrode plate is abutted against the circuit port of the emitter on the chip body, two through grooves are provided on the upper lead-out electrode plate, a locking structure is provided in the through groove, a lower lead-out electrode plate is provided on the bottom of the gate mold frame, and the top of the lower lead-out electrode plate is abutted against the circuit port of the collector on the chip body.

[0006] As a further description of the above technical solution:

[0007] A plurality of heat sinks are fixedly arranged on the outside of the shell, and the plurality of heat sinks are arranged in a circular equidistant array.

[0008] As a further description of the above technical solution:

[0009] An upper annular plate is fixedly provided on the outer wall of the upper lead-out electrode plate, and the bottom of the upper annular plate is in contact with the top of the shell. A lower annular plate is fixedly provided on the outer wall of the lower lead-out electrode plate, and the top of the lower annular plate is in contact with the bottom of the shell.

[0010] As a further description of the above technical solution:

[0011] The locking structure includes two connecting rods movably connected to the through slots, a clamping block is fixedly provided at the bottom of the connecting rods, a blocking piece is fixedly provided on one side of the connecting rods, and the other side of the blocking piece is fixedly connected to an inner wall of one side of the through slot.

[0012] As a further description of the above technical solution:

[0013] Slide blocks are fixedly provided on the front and back sides of the connecting rod, slide grooves are provided on the front inner wall and the back inner wall of the through slot, the slide block and the slide grooves are movably connected, a spring is fixedly provided on one side of the slide block, and one end of the spring is fixedly connected to the inner wall of one side of the through slot.

[0014] As a further description of the above technical solution:

[0015] The thickness of the baffle is two millimeters and the baffle is made of rubber.

[0016] The utility model has the following beneficial effects:

[0017] 1. Compared with the prior art, the flat-panel package crimped-type lead-out electrode insulated gate bipolar transistor element is provided with connecting rods, card blocks, sliders, springs, baffles, through grooves and cavities. When it is necessary to replace or repair the components inside the device, the two connecting rods are pulled in the direction close to each other at the same time, and the connecting rods drive the card blocks and sliders to move, and the sliders squeeze the springs on one side. When the card blocks move to the end of the cavity and the card blocks fit with the inner wall of one side of the cavity, the upper lead-out electrode plate is pulled upward to be removed, and relevant personnel can replace or repair the components inside the device, replacing the traditional crimping mode, and can realize the rapid disassembly and assembly of the upper lead-out electrode plate, reducing the difficulty of subsequent maintenance.

[0018] 2. Compared with the prior art, the flat-panel package press-fit lead-out electrode insulated gate bipolar transistor element connects the chip to the lower lead-out electrode plate and eliminates the insulating layer, thereby shortening the heat conduction path of the chip and reducing the heat conduction resistance. Secondly, the original single-sided bottom plate heat dissipation is changed to heat dissipation on both sides of the chip, further shortening the heat conduction path of the chip and increasing the heat dissipation area. Under the same working conditions, the junction temperature rise of the bipolar transistor element will be much lower and the safety of the element will be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the planar structure of the flat-plate package press-fit type lead-out electrode insulated gate bipolar transistor element proposed by the utility model;

[0020] Figure 2 It is a three-dimensional structural schematic diagram of the flat-plate package press-fit type lead-out electrode insulated gate bipolar transistor element proposed by the utility model;

[0021] Figure 3 It is a schematic diagram of the exploded structure of the flat-plate package press-fit type lead-out electrode insulated gate bipolar transistor element proposed by the utility model;

[0022] Figure 4 It is a schematic diagram of the separation of the upper lead-out electrode plate and the locking structure in the flat-plate package press-fit lead-out electrode insulated gate bipolar transistor element proposed by the utility model;

[0023] Figure 5 It is a schematic diagram of the enlarged structure of the A part of the flat-plate package press-fit type lead-out electrode insulated gate bipolar transistor element proposed by the utility model.

[0024] Legend:

[0025] 1. Chip body; 2. Chip mold frame; 3. Shell; 4. Mounting hole; 5. Upper lead electrode plate; 6. Gate mold frame; 7. Lower lead electrode plate; 8. Heat sink; 9. Upper annular plate; 10. Lower annular plate; 11. Connecting plate; 12. Cavity; 13. Limiting groove; 14. Through groove; 15. Locking structure; 151. Connecting rod; 152. Block; 153. Slider; 154. Spring; 155. Block. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] Reference Figures 1 to 5The utility model provides a flat-plate package crimping type lead-out electrode insulated gate bipolar transistor element: comprising a shell 3, a plurality of heat sinks 8 are fixedly arranged on the outside of the shell 3, the plurality of heat sinks 8 are in a circular equidistant array, the arrangement of the heat sink 8 can improve the heat dissipation of the shell 3, a mounting hole 4 is arranged in the shell 3, a chip mold frame 2 is arranged in the mounting hole 4, a chip body 1 is arranged on the top of the chip mold frame 2, a gate mold frame 6 is arranged below the chip mold frame 2, a gate line is arranged on the gate mold frame 6, and the gate line is connected to the gate circuit on the chip body 1, two connecting plates 11 are arranged on the top of the shell 3, a cavity 12 is arranged on the top of the connecting plate 11, a limiting groove 13 is arranged on the top of the cavity 12, an upper lead-out electrode plate 5 is arranged on the top of the connecting plate 11, the bottom of the upper lead-out electrode plate 5 is attached to the circuit port of the emitter on the chip body 1, and two through grooves 14 are arranged on the upper lead-out electrode plate 5;

[0028] Reference Figure 4 In order to achieve the purpose of quick disassembly, a locking structure 15 is provided in the through slot 14. The locking structure 15 includes two connecting rods 151 movably connected to the through slot 14. Slide blocks 153 are fixedly provided on the front and back sides of the connecting rod 151. Slide grooves are provided on the front inner wall and the back inner wall of the through slot 14. The slide blocks 153 are movably connected to the slide grooves. A spring 154 is fixedly provided on one side of the slide block 153. One end of the spring 154 is fixedly connected to the inner wall of one side of the through slot 14. A block 152 is fixedly provided at the bottom of the connecting rod 151. A baffle 155 is fixedly provided on one side of the connecting rod 151. The baffle 155 The other side of 55 is fixedly connected to the inner wall of one side of the through groove 14. The setting of the locking structure 15 can realize the rapid disassembly and assembly of the upper lead-out electrode plate 5, which is convenient for the subsequent maintenance of the internal components of the device. The bottom of the gate mold frame 6 is provided with a lower lead-out electrode plate 7, and the top of the lower lead-out electrode plate 7 is in contact with the circuit port of the collector on the chip body 1. An upper annular plate 9 is fixedly provided on the outer wall of the upper lead-out electrode plate 5, and the bottom of the upper annular plate 9 is in contact with the top of the shell 3. A lower annular plate 10 is fixedly provided on the outer wall of the lower lead-out electrode plate 7, and the top of the lower annular plate 10 is in contact with the bottom of the shell 3.

[0029] Reference Figure 5 In order to achieve the purpose of dust blocking, the thickness of the baffle 155 is two millimeters. The baffle 155 is made of rubber and has stretchability. When the upper lead-out electrode plate 5 and the housing 3 are fixedly installed, the baffle 155 can cover the gap of the through groove 14 to prevent dust from entering.

[0030] Working principle: When the upper lead-out electrode plate 5 needs to be disassembled and the internal components of the device need to be maintained or replaced, the two connecting rods 151 are pulled towards each other at the same time, and the connecting rod 151 drives the block 152 and the slider 153 to move, and the slider 153 squeezes the spring 154 on one side. When the block 152 moves to the end of the cavity 12 and the block 152 fits with the inner wall of one side of the cavity 12, the upper lead-out electrode plate 5 is pulled upward to be removed, and the relevant personnel can replace or repair the components inside the device. Pull the two connecting rods 151 towards each other at the same time. When the connecting rod 151 fits with the inner wall of one side of the through groove 14, fit the upper lead-out electrode plate 5 with the top of the shell 3, and insert the two clamping blocks 152 into the two cavities 12. Then release the connecting rod 151, and the spring 154 pushes the slider 153, and the slider 153 drives the clamping block 152 to move through the connecting rod 151. When the connecting rod 151 is inserted into the limiting groove 13, the upper lead-out electrode plate 5 is installed, replacing the traditional crimping method, which is convenient for subsequent disassembly and maintenance.

[0031] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A flat-panel package press-fit type lead-out electrode insulated gate bipolar transistor element, comprising a housing (3), characterized in that: The housing (3) is provided with a mounting hole (4), the mounting hole (4) is provided with a chip mold frame (2), the top of the chip mold frame (2) is provided with a chip body (1), the bottom of the chip mold frame (2) is provided with a gate mold frame (6), the gate mold frame (6) is provided with a gate line, the gate line is connected to the gate circuit on the chip body (1), the top of the housing (3) is provided with two connecting plates (11), the top of the connecting plates (11) is provided with a cavity (12), the top of the cavity (12) A limiting groove (13) is provided, an upper lead-out electrode plate (5) is provided on the top of the connecting plate (11), the bottom of the upper lead-out electrode plate (5) is in contact with the circuit port of the emitter on the chip body (1), two through grooves (14) are provided on the upper lead-out electrode plate (5), a locking structure (15) is provided in the through grooves (14), a lower lead-out electrode plate (7) is provided on the bottom of the gate mold frame (6), the top of the lower lead-out electrode plate (7) is in contact with the circuit port of the collector on the chip body (1).

2. The flat-panel package press-fit type lead-out electrode insulated gate bipolar transistor device according to claim 1, characterized in that: A plurality of heat dissipation plates (8) are fixedly provided on the outside of the housing (3), and the plurality of heat dissipation plates (8) are arranged in a circular equidistant array.

3. The flat-panel package press-fit type lead-out electrode insulated gate bipolar transistor device according to claim 1, characterized in that: An upper annular plate (9) is fixedly provided on the outer wall of the upper lead-out electrode plate (5), and the bottom of the upper annular plate (9) is in contact with the top of the outer shell (3); a lower annular plate (10) is fixedly provided on the outer wall of the lower lead-out electrode plate (7), and the top of the lower annular plate (10) is in contact with the bottom of the outer shell (3).

4. The flat-panel package press-fit type lead-out electrode insulated gate bipolar transistor device according to claim 1, characterized in that: The locking structure (15) comprises two connecting rods (151) movably connected to the through slot (14); a clamping block (152) is fixedly provided at the bottom of the connecting rod (151); a blocking sheet (155) is fixedly provided on one side of the connecting rod (151); and the other side of the blocking sheet (155) is fixedly connected to an inner wall of one side of the through slot (14).

5. The flat-panel package press-fit type lead-out electrode insulated gate bipolar transistor device according to claim 4, characterized in that: A slider (153) is fixedly provided on the front and back sides of the connecting rod (151); a slide groove is provided on the front inner wall and the back inner wall of the through slot (14); the slider (153) and the slide groove are movably connected; a spring (154) is fixedly provided on one side of the slider (153); one end of the spring (154) is fixedly connected to the inner wall of one side of the through slot (14).

6. The flat-panel package press-fit type lead-out electrode insulated gate bipolar transistor device according to claim 4, characterized in that: The thickness of the blocking piece (155) is two millimeters, and the blocking piece (155) is made of rubber.

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