Temperature control device for N-type silicon wafer furnace tube

Abstract

The utility model relates to the technical field of silicon wafer furnace tubes, in particular to an N-type silicon wafer furnace tube temperature control device which comprises a furnace tube body, two fixing rods are fixedly connected to the inner wall of the furnace tube body, and the side walls of the two fixing rods are jointly connected with a bearing plate in a sliding mode. The temperature control mechanism comprises an annular groove formed in the inner wall of the furnace tube body, a circular ring is slidably connected to the inner wall of the annular groove, a plurality of thermocouples are fixedly connected to the inner side wall of the circular ring, and a first motor is fixedly connected to the side wall of the furnace tube body. According to the utility model, uniform heating and accurate temperature control can be carried out on the N-type silicon wafer, and the problems that in the prior art, the heating mode of a furnace tube is fixed, uniform heating cannot be carried out on the N-type silicon wafer, accurate temperature control cannot be realized, slurry on the surface of the N-type silicon wafer is heated unevenly during forming of the N-type silicon wafer, and the temperature of the N-type silicon wafer cannot be controlled accurately are solved. The phenomenon of powder falling of the slurry is easily caused, and the N-type silicon wafer cannot be effectively protected.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon wafer furnace tubes, in particular to an N-type silicon wafer furnace tube temperature control device. Background Art

[0002] N-type silicon wafer refers to silicon wafer material doped with a certain amount of heteroatoms, such as phosphorus, arsenic, etc., making it a negative semiconductor with a higher doping concentration.

[0003] During the manufacturing process of N-type silicon wafers, a layer of slurry needs to be applied to the outside of the N-type silicon wafer, and the slurry is dried to form the N-type silicon wafer. Generally, the ark carrying the N-type silicon wafer is placed in a furnace tube, and then the furnace tube is heated and gas is introduced to form the N-type silicon wafer. However, the current heating method of the inner furnace tube is fixed, and the N-type silicon wafer cannot be heated evenly, and thus precise temperature control cannot be achieved. As a result, when the N-type silicon wafer is formed, the slurry on the surface of the N-type silicon wafer is heated unevenly, which easily leads to the phenomenon of slurry powdering, and the N-type silicon wafer cannot be effectively protected. Utility Model Content

[0004] The utility model aims to solve the shortcomings in the prior art and proposes an N-type silicon wafer furnace tube temperature control device.

[0005] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0006] An N-type silicon wafer furnace tube temperature control device, comprising:

[0007] A furnace tube body, wherein the inner wall of the furnace tube body is fixedly connected to two fixing rods, and the side walls of the two fixing rods are slidably connected to a bearing plate;

[0008] A temperature control mechanism, the temperature control mechanism comprising an annular groove provided on the inner wall of the furnace tube body, a circular ring being slidably connected to the inner wall of the annular groove, a plurality of thermocouples being fixedly connected to the inner wall of the circular ring, a first motor being fixedly connected to the side wall of the furnace tube body, a movable end of the first motor being located inside the furnace tube body, a gear being fixedly connected to the movable end of the first motor, and a gear ring meshing with the gear being fixedly connected to the inner wall of the circular ring;

[0009] A base is provided with a moving mechanism for moving the bearing plate.

[0010] Preferably, a plurality of through slots are formed on the upper end of the carrying plate, and two inner walls opposite to the through slots are fixedly connected with a fixing plate.

[0011] Preferably, a temperature sensor is installed on the upper end of the carrier plate, and the temperature sensor and a plurality of thermocouples are electrically connected to an external power source via an electrical rotary joint.

[0012] Preferably, the moving mechanism includes a groove opened at the upper end of the base, the inner wall of the groove is slidably connected to a slider, the upper end of the slider is fixedly connected to an L-shaped rod, the side wall of the L-shaped rod away from the slider penetrates the inner wall of the furnace tube body and is fixedly connected to the side wall of the supporting plate, and the side wall of the L-shaped rod is sealed and slidably connected to the inner wall of the furnace tube body.

[0013] Preferably, a lead screw is fixedly connected to the inner wall of the groove, the side wall of the lead screw is threadedly connected to the side wall of the slider, the side wall of the base is fixedly connected to a second motor, and the movable end of the second motor is fixedly connected to one end of the lead screw.

[0014] Preferably, the side wall of the furnace tube body is rotatably connected to a cover door via a rotating shaft, the side wall of the cover door is connected to the side wall of the furnace tube body via a plurality of bolts, the side wall of the cover door is fixedly connected to an air intake pipe, and a manual regulating valve is installed on the air intake pipe.

[0015] The utility model has the following beneficial effects:

[0016] By setting up a temperature control mechanism, the N-type silicon wafer can be evenly heated and the temperature can be accurately controlled, which avoids the problem that the heating method of the furnace tube in the prior art is fixed, the N-type silicon wafer cannot be evenly heated, and thus the temperature cannot be accurately controlled, resulting in uneven heating of the slurry on the surface of the N-type silicon wafer when the N-type silicon wafer is formed, which easily causes the slurry to fall off, and the N-type silicon wafer cannot be effectively protected. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the structure of an N-type silicon wafer furnace tube temperature control device proposed by the utility model;

[0018] Figure 2 for Figure 1 A vertical cross-sectional structural schematic diagram of ;

[0019] Figure 3 for Figure 1 Schematic diagram of the structure of the middle load-bearing plate;

[0020] Figure 4 for Figure 1 Schematic diagram of the rear view structure.

[0021] In the figure: 1. furnace tube body; 2. fixing rod; 3. bearing plate; 4. through groove; 5. fixing plate; 6. annular groove; 7. circular ring; 8. thermocouple; 9. temperature sensor; 10. first motor; 11. gear; 12. gear ring; 13. cover door; 14. bolt; 15. base; 16. groove; 17. slider; 18. lead screw; 19. L-shaped rod; 20. second motor; 21. air intake pipe. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0023] Reference Figure 1-4 A temperature control device for an N-type silicon wafer furnace tube comprises a furnace tube body 1, a side wall of the furnace tube body 1 being rotatably connected with a cover door 13 via a rotating shaft, the side wall of the cover door 13 being connected to the side wall of the furnace tube body 1 via a plurality of bolts 14, the side wall of the cover door 13 being fixedly connected with an air inlet pipe 21, a manual regulating valve being installed on the air inlet pipe 21, further, a sealing rubber pad being provided on the side wall of the cover door 13 to ensure the sealing between the furnace tube body 1 and the cover door 13 after the two are connected.

[0024] Two fixing rods 2 are fixedly connected to the inner wall of the furnace tube body 1, and the side walls of the two fixing rods 2 are slidably connected with a supporting plate 3. A plurality of through grooves 4 are opened on the upper end of the supporting plate 3, and two inner walls opposite to the through grooves 4 are fixedly connected with fixing plates 5, and the ark with N-type silicon wafers can be placed on the fixing plate 5.

[0025] The temperature control mechanism includes an annular groove 6 opened on the inner wall of the furnace tube body 1, a circular ring 7 is slidably connected to the inner wall of the annular groove 6, a plurality of thermocouples 8 are fixedly connected to the inner wall of the circular ring 7, a first motor 10 is fixedly connected to the side wall of the furnace tube body 1, the movable end of the first motor 10 is located inside the furnace tube body 1, a gear 11 is fixedly connected to the movable end of the first motor 10, and a gear ring 12 meshing with the gear 11 is fixedly connected to the inner wall of the circular ring 7.

[0026] A temperature sensor 9 is installed on the upper end of the supporting plate 3. The temperature sensor 9 and multiple thermocouples 8 are electrically connected to the external power supply through an electrical rotating joint. The electrical rotating joint is also called a slip ring, a conductive slip ring, a collector ring, etc. It is mainly used to solve the problem of high-precision instrument accessories that transmit power and data signals from a fixed structure to a rotating structure on a 360° unlimited continuous rotating mechanical equipment, ensuring that during the rotation of the ring 7, multiple thermocouples 8 can be powered stably.

[0027] Furthermore, the gear ring 12 is located between the side wall of the thermocouple 8 and the inner wall of the furnace tube body 1, so that when the gear 11 rotates, the gear ring 12 can rotate normally, and then the ring 7 drives the multiple thermocouples 8 to rotate, so that the N-type silicon wafer can be evenly heated;

[0028] And the temperature sensor 9 can sense the temperature in the furnace tube body 1, can control the heat generated by the thermocouple 8, and then control the temperature in the furnace tube body 1. This control method is a prior art and ensures the quality of N-type silicon wafer preparation;

[0029] Furthermore, through the above operation, it is avoided that the heating method of the furnace tube in the prior art is fixed, and the N-type silicon wafer cannot be heated evenly, and thus precise temperature control cannot be achieved, resulting in uneven heating of the slurry on the surface of the N-type silicon wafer when the N-type silicon wafer is formed, which easily causes the slurry to fall off, and the N-type silicon wafer cannot be effectively protected.

[0030] The base 15 is provided with a moving mechanism for moving the bearing plate 3, and the moving mechanism includes a groove 16 opened at the upper end of the base 15, and a slider 17 is slidably connected to the inner wall of the groove 16, and an L-shaped rod 19 is fixedly connected to the upper end of the slider 17. The side wall of the L-shaped rod 19 away from the slider 17 penetrates the inner wall of the furnace tube body 1 and is fixedly connected to the side wall of the bearing plate 3, and the side wall of the L-shaped rod 19 is sealed and slidably connected to the inner wall of the furnace tube body 1.

[0031] A lead screw 18 is fixedly connected to the inner wall of the groove 16 , and the side wall of the lead screw 18 is threadedly connected to the side wall of the slider 17 . A second motor 20 is fixedly connected to the side wall of the base 15 , and the movable end of the second motor 20 is fixedly connected to one end of the lead screw 18 .

[0032] Furthermore, when the second motor 20 rotates clockwise or counterclockwise, the lead screw 18 can rotate clockwise or counterclockwise, thereby driving the L-shaped rod 19 to move leftward or rightward, so that the bearing plate 3 extends out of the furnace tube body 1 or enters the furnace tube body 1. Figure 2 .

[0033] When preparing N-type silicon wafers, the second motor 20 is driven to rotate clockwise, and then the lead screw 18 is rotated clockwise, so that the slider 17 drives the L-shaped rod 19 to move leftward, so that the carrying plate 3 is moved out of the furnace tube body 1, and then the staff can place the ark with the N-type silicon wafers on the two fixing plates 5 located in the through groove 4;

[0034] Then, the second motor 20 is driven to rotate counterclockwise, and then the lead screw 18 rotates counterclockwise, so that the slider 17 drives the L-shaped rod 19 to move rightward, so that the bearing plate 3 enters the furnace tube body 1;

[0035] Then rotate the cover door 13 so that the cover door 13 is connected to the furnace tube body 1 through a plurality of bolts 14;

[0036] Then, oxygen is supplied into the furnace tube body 1 through the air inlet pipe 21, and multiple thermocouples 8 are energized, and then the first motor 10 is driven to rotate, and then the gear 11 drives the ring 7 to rotate through the gear ring 12, so that multiple thermocouples 8 rotate, and the N-type silicon wafer can be evenly heated;

[0037] Furthermore, the temperature sensor 9 can sense the temperature inside the furnace tube body 1 and control the heat generated by the thermocouple 8, thereby controlling the temperature inside the furnace tube body 1 to ensure the quality of the N-type silicon wafer during preparation.

[0038] The above are only preferred specific implementation methods of the utility model, but the protection scope of the utility model is not limited to this. Any technician familiar with the technical field within the technical scope disclosed by the utility model, who makes equivalent replacements or changes based on the technical scheme and utility model concept of the utility model, should be covered by the protection scope of the utility model.

Claims

1. An N-type silicon wafer furnace tube temperature control device, characterized in that: include: A furnace tube body (1), wherein two fixing rods (2) are fixedly connected to the inner wall of the furnace tube body (1), and a bearing plate (3) is slidably connected to the side walls of the two fixing rods (2); A temperature control mechanism, the temperature control mechanism comprising an annular groove (6) formed on the inner wall of a furnace tube body (1), a circular ring (7) being slidably connected to the inner wall of the annular groove (6), a plurality of thermocouples (8) being fixedly connected to the inner wall of the circular ring (7), a first motor (10) being fixedly connected to the side wall of the furnace tube body (1), a movable end of the first motor (10) being located inside the furnace tube body (1), a gear (11) being fixedly connected to the movable end of the first motor (10), and a gear ring (12) meshing with the gear (11) being fixedly connected to the inner wall of the circular ring (7); A base (15) is provided on the base (15) with a moving mechanism for moving the carrying plate (3).

2. The N-type silicon wafer furnace tube temperature control device according to claim 1, characterized in that: A plurality of through slots (4) are provided at the upper end of the bearing plate (3), and two opposite inner walls of the through slots (4) are fixedly connected to a fixing plate (5).

3. The N-type silicon wafer furnace tube temperature control device according to claim 1, characterized in that: A temperature sensor (9) is installed on the upper end of the carrier plate (3); the temperature sensor (9) and a plurality of thermocouples (8) are electrically connected to an external power source via an electrical rotary joint.

4. The N-type silicon wafer furnace tube temperature control device according to claim 1, characterized in that: The moving mechanism comprises a groove (16) formed at the upper end of the base (15); a slider (17) is slidably connected to the inner wall of the groove (16); an L-shaped rod (19) is fixedly connected to the upper end of the slider (17); a side wall of the L-shaped rod (19) away from the slider (17) penetrates the inner wall of the furnace tube body (1) and is fixedly connected to the side wall of the bearing plate (3); and the side wall of the L-shaped rod (19) is sealed and slidably connected to the inner wall of the furnace tube body (1).

5. The N-type silicon wafer furnace tube temperature control device according to claim 4, characterized in that: A lead screw (18) is fixedly connected to the inner wall of the groove (16), and the side wall of the lead screw (18) is threadedly connected to the side wall of the slider (17). A second motor (20) is fixedly connected to the side wall of the base (15), and the movable end of the second motor (20) is fixedly connected to one end of the lead screw (18).

6. The N-type silicon wafer furnace tube temperature control device according to claim 1, characterized in that: The side wall of the furnace tube body (1) is rotatably connected to a cover door (13) via a rotating shaft; the side wall of the cover door (13) is connected to the side wall of the furnace tube body (1) via a plurality of bolts (14); the side wall of the cover door (13) is fixedly connected to an air intake pipe (21); and a manual regulating valve is installed on the air intake pipe (21).

Images