Hard short circuit protection switch circuit, battery and electronic equipment

Abstract

The utility model discloses a hard short circuit protection switch circuit, a battery and an electronic device, relates to the field of protection switches, and solves the problem that a protection switch cannot be timely switched off in case of short circuit. As the cathode of the second diode is directly connected to the load receiving end, the short-circuit current mainly flows into the load through the second diode, the second transistor enters a cut-off region due to reduction or interruption of the base current, the first transistor is further disconnected, and the short-circuit current is further ensured not to flow to the load through the second transistor. Through the mechanism, the circuit can automatically cut off a current path passing through the transistor when a short circuit occurs, and then current is provided for the load through the second diode. The transistor is protected, and damage caused by short-circuit current is avoided. And the output is directly turned off through hardware without the intervention of software, so that the protection response speed is high.

Description

Technical Field

[0001] The utility model relates to the field of protection switches, in particular to a hard short-circuit protection switch circuit, a battery and an electronic device. Background Art

[0002] In automotive electronic modules, the power supply and control of low-power loads require careful design to ensure that the quiescent current is reduced during sleep and to provide protection when the load is hard short-circuited. By adding a control switch, on the one hand, the quiescent current of the module can be reduced during sleep; on the other hand, when the load is hard short-circuited, the power output can be directly shut down, mainly through a fuse.

[0003] The main function of a fuse is to melt when the current is too large to protect the circuit from damage caused by overcurrent. For low-power loads, due to the small current, when the short-circuit time reaches the thermal stress threshold of the component (such as the temperature reaches a certain value), the component used for short-circuit protection will start to shut down the output. In this way, the short-circuit protection reacts slowly and requires a higher power from the component.

[0004] It can be seen that how to provide a hard short-circuit switch for a small power load and disconnect it in time when a short circuit occurs is a technical problem that needs to be solved urgently by people in this field. Utility Model Content

[0005] The utility model aims to provide a hard short circuit protection switch circuit, a battery and an electronic device, which can solve the problem that the protection switch cannot be disconnected in time when a short circuit occurs.

[0006] In order to solve the above technical problems, the utility model provides a hard short circuit protection switch circuit.

[0007] A first diode, a second diode, a first transistor, a second transistor, a first resistor, a second resistor, and a controller;

[0008] The output end of the controller is connected to the anode of the first diode and the anode of the second diode, the cathode of the first diode is connected to the control end of the second transistor and is grounded through the first resistor, and the second end of the second transistor is grounded; the first end of the second transistor is connected to the control end of the first transistor;

[0009] The power supply output end is connected to the first end of the first transistor; the second end of the first transistor is grounded through the second resistor and connected to the receiving end of the output load; the cathode of the second diode is connected to the receiving end of the output load.

[0010] As a preferred solution, the hard short circuit protection switch circuit further includes: a third resistor;

[0011] A second terminal of the second transistor is grounded through the third resistor.

[0012] As a preferred solution, the hard short circuit protection switch circuit further includes: a fourth resistor;

[0013] The output end of the controller is connected to the anode of the first diode and the anode of the second diode through the fourth resistor.

[0014] As a preferred solution, in the above-mentioned hard short-circuit protection switch circuit, the first diode and the second diode are rectifier diodes.

[0015] As a preferred solution, in the above hard short circuit protection switch circuit, the voltage drop of the first diode is equal to the voltage drop of the second diode.

[0016] As a preferred solution, in the above-mentioned hard short circuit protection switch circuit, the third resistor is an adjustable resistor.

[0017] As a preferred solution, in the above-mentioned hard short-circuit protection switch circuit, the hard short-circuit protection switch circuit is constructed by discrete components.

[0018] As a preferred solution, in the above-mentioned hard short-circuit protection switch circuit, the controller is a single-chip microcomputer.

[0019] In order to solve the above technical problems, the utility model also provides a battery, including the above hard short circuit protection switch circuit.

[0020] In order to solve the above technical problems, the utility model also provides an electronic device, comprising a plurality of hard short circuit protection switch circuits as described above.

[0021] The hard short-circuit protection switch circuit provided by the utility model includes: a first diode, a second diode, a first transistor, a second transistor, a first resistor, a second resistor, and a controller; the output end of the controller is connected to the positive electrode of the first diode and the positive electrode of the second diode, the negative electrode of the first diode is connected to the control end of the second transistor and is grounded through the first resistor, and the second end of the second transistor is grounded; the first end of the second transistor is connected to the control end of the first transistor; the power supply output end is connected to the first end of the first transistor; the second end of the first transistor is grounded through the second resistor and is connected to the receiving end of the output load; the negative electrode of the second diode is connected to the receiving end of the output load. When the load is short-circuited (that is, the load impedance is close to 0), the load current increases sharply. Due to the increase in short-circuit current, the second diode begins to conduct. Since the negative electrode of the second diode is directly connected to the load receiving end, the short-circuit current mainly flows into the load through the second diode, thereby bypassing the second transistor. The second transistor enters the cut-off region due to the reduction or interruption of the base current, further ensuring that the short-circuit current will not flow to the load through it. Through the above mechanism, the circuit can automatically cut off the current path through the transistor when a short circuit occurs, and instead provide current to the load through the second diode. In this way, the transistor is protected from damage caused by short-circuit current. At the same time, since the short-circuit current mainly flows through the second diode, the load can still be powered to a certain extent. By directly shutting down the output through hardware, there is no need for software intervention, and there is no need to wait for the thermal effect of the fuse to accumulate and melt, and the protection response speed is fast.

[0022] In addition, the utility model also provides a battery and an electronic device, including the above-mentioned hard short-circuit protection switch circuit, and the effect is the same as above. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present utility model, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] FIG1 is a circuit diagram of a hard short circuit protection switch circuit provided in an embodiment of the present application. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of them. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the protection scope of the utility model.

[0026] The core of the utility model is to provide a hard short circuit protection switch circuit, a battery and an electronic device.

[0027] In order to enable those skilled in the art to better understand the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0028] In automotive electronic modules, for powering low-power loads, if high-side switch chips or separate fuses (fuses) are used to achieve hard short-circuit protection, high-side switch chips are usually used in high-current, high-voltage applications to provide precise current control and protection functions. For low-power loads (below 360mW), the complex functions and performance provided by such chips may far exceed actual needs. Since the current and voltage of low-power loads are low, such complex control and protection mechanisms are not required. Therefore, the use of high-side switch chips in this case is too complicated and expensive. The main function of the fuse is to blow when the current is too large to protect the circuit from damage by overcurrent. High-side switch chips: Such chips are usually more expensive because they integrate many advanced functions such as current detection, over-temperature protection, fault diagnosis, etc. For low-power loads, these additional functions may not be necessary, so the use of high-side switch chips will increase unnecessary costs. For low-power loads, due to the small current, the use of fuses may mean that a fuse with a very small rated current needs to be selected, which may cause the fuse to malfunction easily under normal operating conditions. In addition, the installation and replacement of fuses may also be more troublesome and expensive than using electronic switches. Individual fuses: While the price of the fuse itself may not be high, the overall cost may also increase when considering the cost of installation, replacement and possible repairs. In addition, if the fuse blows frequently, the labor and time cost of replacing the fuse also needs to be considered.

[0029] To solve the above problems, an embodiment of the present application provides a hard short circuit protection switch circuit, as shown in FIG1 , a first diode D1, a second diode D2, a first transistor Q1, a second transistor Q2, a first resistor R1, a second resistor R2, and a controller;

[0030] The output end of the controller is connected to the anode of the first diode D1 and the anode of the second diode D2; the cathode of the first diode D1 is connected to the control end of the second transistor Q2 and is grounded through the first resistor R1; the second end of the second transistor Q2 is grounded; the first end of the second transistor Q2 is connected to the control end of the first transistor Q1;

[0031] The power output end is connected to the first end of the first transistor Q1; the second end of the first transistor Q1 is grounded through the second resistor R2 and connected to the receiving end of the output load; the cathode of the second diode D2 is connected to the receiving end of the output load.

[0032] In this embodiment, the first transistor Q1 is an output transistor, which is used to directly control whether the power supply is output; the second transistor Q2 is a control transistor, which controls whether the first transistor Q1 is turned on, and the base current of the second transistor Q2 is kept constant.

[0033] Specifically, it also includes: a fourth resistor R4; the output end of the controller is connected to the anode of the first diode and the anode of the second diode through the fourth resistor R4.

[0034] In this embodiment, the output end of the controller is connected to the anode of the first diode D1 and the anode of the second diode D2 through the fourth resistor R4. This means that the control signal will pass through the cathodes of the two diodes at the same time. The cathode of the first diode D1 is connected to the control end of the second transistor Q2, triggering the second transistor Q2. The output signal of the second transistor Q2 is transmitted to the control end of the first transistor Q1, further controlling the state of the first transistor Q1.

[0035] Specifically, a fifth resistor R5 is further included, and the fifth resistor R5 is connected to the first end and the control end of the first transistor Q1.

[0036] The power supply provides the working voltage to the first transistor Q1 through the fifth resistor R5. Since the first end of the first transistor Q1 is connected to the power output end, the second end thereof will flow through the second resistor R2 to the ground, and the first transistor Q1 drives the output load RL.

[0037] The cathode of the second diode D2 is connected to the output load RL, and is used to protect the output load RL and ensure that only forward current can reach the load.

[0038] Specifically, it also includes: a third resistor R3;

[0039] The second terminal of the second transistor is grounded through the third resistor R3.

[0040] The third resistor R3 is a driving capability adjustment resistor, and the driving capability of the circuit can be changed by changing the resistance value.

[0041] The first transistor Q1 is a PNP triode or a P-channel (positive channel) MOS tube (Metal-Oxide-Semiconductor Field-Effect Transistor). The second transistor Q2 is an NPN triode.

[0042] The first transistor Q1 is a PNP transistor or a P-channel MOS transistor, as long as the rated power of the selected MOS transistor can meet the load demand. The second transistor Q2 is an NPN transistor, which cannot be replaced by an N-channel (Negative channel) MOS transistor, because the fully turned-on voltage of the MOS transistor is high, and the voltage output by the microcontroller unit (MCU) is not enough to fully turn on the MOS transistor.

[0043] In order to better illustrate the control scheme of this embodiment, an actual application environment is used for illustration. In this embodiment, the load impedance adjustment description (the input voltage V1 remains unchanged at 12V) is as follows:

[0044] 1. Load impedance is within the normal range (400±10%Ω):

[0045] By configuring the control tube, the second transistor Q2 is made to work in the amplification region, and the output tube first transistor Q1 is made to work in the saturation region.

[0046] Configuration reason description:

[0047] The second transistor Q2 works in the amplification region:

[0048] On the one hand, under the same Ib2 (Ib represents the base current of the transistor, Ic represents the collector current of the transistor, Ie represents the emitter current of the transistor, and the subscripts 1 and 2 represent Q1 and Q2) current (from the output port of the MCU, i.e. V2), the second transistor Q2 can obtain a larger Ic2 current when it works in the amplification region than in the saturation region, that is, it can obtain a larger Ib1 current. Under the same tube voltage drop Uce1, a larger Ib1 current can obtain a larger Ic1 current. That is, when other conditions are the same, the second transistor Q2 working in the amplification region can improve the driving capability of the entire driving circuit.

[0049] On the other hand, when the vehicle power input (V1) changes, under the condition of negative feedback, only when the second transistor Q2 works in the amplification area can the Ic2 current not change with the change of V1, that is, a stable Ib1 current can be obtained. Under the condition of stable Ib1 current, for the same input voltage (V1) change, it will not cause excessive change in the saturation tube voltage drop of the output tube first transistor Q1.

[0050] The first transistor Q1 works in the saturation region:

[0051] On the one hand, the normal operation of the load generally requires a certain supply voltage range. If the voltage drop of the first transistor Q1 is too large (operating in the amplification region), the supply voltage requirement of the load cannot be met.

[0052] On the other hand, the operation of the first transistor Q1 in the amplification region will cause excessive reactive power loss, which not only wastes the battery energy but also generates heat itself, thereby reducing its service life.

[0053] The second transistor Q2 works in the amplification region, and its base current is provided by the cathode of the first diode D1 and is grounded through the first resistor R1. The first transistor Q1 works in the saturation region, and its collector current is relatively large, so the output load RL obtains sufficient current. The voltage at point A (the connection point between the fourth resistor R4 and the first diode D1) is determined by the first diode D1 loop. At this time, the first diode D1 is forward-conducted to maintain a relatively stable voltage.

[0054] 2. The load impedance decreases from 400Ω to 43.022Ω (the last moment when the voltage UA at point A is determined by the diode D1 loop):

[0055] Explanation of the working state change of the second transistor Q2:

[0056] During this change, since the voltage (UA) at point A (A, B, C, D, E detection points in Figure 1, whose voltages are represented by UA, UB, UC, UD, UE) is determined by the D1 circuit and remains unchanged (4.88V), UB remains unchanged (4.38V), UE remains unchanged (3.73V), UD remains unchanged (11.2V), Ic2 remains unchanged (2.46mA), Ib2 remains unchanged (27.3μA), and the DC current gain hFE2 remains unchanged (90). During this process, the operating point of the second transistor Q2 of the triode is at a fixed position in the amplification area and remains unchanged.

[0057] Description of the working state change of the first transistor Q1:

[0058] During this change, since Ib1 remains unchanged (2.46mA), Ic1 increases (up to 147mA), and Uce1 increases, the DC current gain hFE1 increases (up to 60), and the output voltage decreases (down to 6.32V). During this process, the operating point of the first transistor Q1 of the triode moves from the saturation region to the amplification region.

[0059] The operating point of the second transistor Q2 remains unchanged because it operates in the amplification region and the change of the base current is mainly determined by the input signal rather than the load impedance.

[0060] The first transistor Q1 moves from the saturation region to the amplification region because as the load impedance decreases, the collector current increases, causing the collector-emitter voltage to rise, thereby entering the amplification region.

[0061] The voltage at point A is still determined by the first diode D1 loop at this stage, because the first diode D1 is still turned on. Since the working state of the first transistor Q1 changes, but the first diode D1 loop itself does not change, the voltage at point A does not change.

[0062] 3. The load impedance is 43.021Ω (the voltage UA at point A is determined by the diode D2 loop at the start time):

[0063] The working state of the second transistor Q2 is as follows:

[0064] UB (0.49V), UE (0.01V), UD (11.6V), Ic2 (8.22μA), Ib2 (0.11μA), DC current gain hFE2 (77). At this time, the second transistor Q2 works in the amplification region.

[0065] The working state of the first transistor Q1 is as follows:

[0066] UD (11.6V), UC (0.18V), Ic1 (205nA), Ib1 (8.22μA), DC current gain hFE1 (0.02). At this time, the first transistor Q1 works in the amplification region.

[0067] As the load impedance further decreases, the first transistor Q1 may gradually exit the amplification region, and the collector current decreases, causing the voltage at point A to begin to be affected by the loop of the second diode D2.

[0068] The second diode D2 begins to participate more in the circuit, and its cathode is connected to the receiving end of the output load RL, so that the current output by the controller begins to flow into the load through the second diode D2.

[0069] Both transistors may enter the amplification region because their base currents are controlled to a certain extent, but the specific working state also depends on the parameters of other components in the circuit and the specific value of the load impedance.

[0070] 4. Load impedance is 0Ω (hard short circuit):

[0071] At this time, almost all of the current (4.31 mA) output by the MCU flows into the load instead of the second transistor Q2 of the triode, so that the second transistor Q2 works in the cut-off region, and the first transistor Q1 also works in the cut-off region.

[0072] Almost all of the current output by the controller flows into the load through the second diode D2. Because the load impedance is 0 at this time, the current in the circuit is mainly limited by the impedance between the power supply and the load.

[0073] The second transistor Q2 enters the cut-off region due to the reduction or interruption of the base current.

[0074] The first transistor Q1 also enters the cut-off region due to the change of the base current.

[0075] In this case, the voltage at point A is mainly determined by the second diode D2 loop, because the first diode D1 loop no longer has a significant effect on the voltage at point A due to the cut-off of the first transistor Q1.

[0076] In addition, it should be noted that the circuit solution provided in this embodiment maintains the stability of the output voltage when the power supply is unstable. Take the input voltage (taking the normal operating voltage range of 9V-16V as an example) as an example (the load impedance remains unchanged at 400Ω):

[0077] 1. The input voltage (V1) increases from 12V to 16V:

[0078] Explanation of the working state change of the second transistor Q2:

[0079] During this change, since the voltage at point A (UA) is determined by the D1 circuit and remains unchanged (4.88V), UB remains unchanged (4.38V), UE remains unchanged (3.73V), Ic2 remains unchanged (2.46mA), Ib2 remains unchanged (27.3μA), and the DC current gain hFE2 remains unchanged (90), but the tube voltage drop Uce2 continues to increase (up to 15.3V). During this process, the operating point of the second transistor Q2 of the triode moves rightward from the position corresponding to 12V in the amplification region along the specific output characteristic curve to the position corresponding to 16V.

[0080] Description of the working state change of the first transistor Q1:

[0081] During this change, since Ib1 remains unchanged (2.46mA), Ic1 increases (to 40.2mA), and Uce1 increases, the DC current gain hFE1 increases (to 16), and the output voltage increases (to 15.9V). During this process, the operating point of the first transistor Q1 of the triode moves from the position corresponding to 12V in the saturation region to the position corresponding to 16V along the specific output characteristic curve.

[0082] 2. Input voltage (V1) drops from 12V to 9V:

[0083] Explanation of the working state change of the second transistor Q2:

[0084] During this change, since the voltage at point A (UA) is determined by the D1 circuit and remains unchanged (4.88V), UB remains unchanged (4.38V), UE remains unchanged (3.73V), Ic2 remains unchanged (2.46mA), Ib2 remains unchanged (27.3μA), and the DC current gain hFE2 remains unchanged (90), but the tube voltage drop Uce2 continues to decrease (to 8.3V). During this process, the operating point of the second transistor Q2 moves leftward from the position corresponding to 12V in the amplification region along the specific output characteristic curve to the position corresponding to 9V.

[0085] Description of the working state change of the first transistor Q1:

[0086] During this change, since Ib1 remains unchanged (2.46mA), Ic1 becomes smaller and smaller (to 22.6mA), and Uce1 becomes smaller and smaller, the DC current gain hFE1 becomes smaller and smaller (to 9), and the output voltage becomes smaller and smaller (to 8.97V). During this process, the operating point of the first transistor Q1 of the triode moves down from the position corresponding to 12V to the position corresponding to 9V along the specific output characteristic curve in the saturation region.

[0087] When conducting an overcurrent test, the short-circuit current is usually set to 3 times the rated load current for the test. During a soft short circuit, the saturation tube voltage drop Uce1 of the first output tube transistor Q1 is 0.2V, and the current flowing through it is 90mA. At this time, the power consumed is 18mW, and its own power is relatively low. Therefore, the circuit has a lower rated power requirement for the output tube, saving costs.

[0088] The third resistor R3 is a driving capacity adjustment resistor. Changing the resistance value can change the driving capacity of the circuit. Because the rated power limit of the currently selected output tube first transistor Q1 (330mW), coupled with the design consideration of power derating (derating 80%), the power consumed by the first transistor Q1 during soft short circuit cannot exceed 264mW, that is, the tube voltage drop cannot exceed 0.2V, and the collector current Ic1 cannot exceed 145mA. Considering that the soft short circuit current is 3 times the rated current of the load during the overcurrent test, the rated current of the load cannot exceed 145 / 3=48mA. If the rated current of the load in the actual application exceeds 48mA, it is necessary to select the output tube first transistor Q1 with a larger rated power.

[0089] The hard short-circuit protection switch circuit provided by the embodiment of the present application includes: a first diode D1, a second diode D2, a first transistor Q1, a second transistor Q2, a first resistor R1, a second resistor R2, and a controller; the output end of the controller is connected to the positive electrode of the first diode and the positive electrode of the second diode, the negative electrode of the first diode is connected to the control end of the second transistor and is grounded through the first resistor R1, and the second end of the second transistor is grounded; the first end of the second transistor is connected to the control end of the first transistor; the power supply output end is connected to the first end of the first transistor; the second end of the first transistor is grounded through the second resistor R2 and is connected to the receiving end of the output load; the negative electrode of the second diode is connected to the receiving end of the output load. When the load is short-circuited (that is, the load impedance is close to 0), the load current increases sharply. Due to the increase in short-circuit current, the second diode begins to conduct. Since the negative electrode of the second diode is directly connected to the load receiving end, the short-circuit current mainly flows into the load through the second diode, thereby bypassing the second transistor. The second transistor enters the cut-off region due to the reduction or interruption of the base current, further ensuring that the short-circuit current does not flow to the load through it. Through the above mechanism, the circuit can automatically cut off the current path through the transistor when a short circuit occurs, and instead provide current to the load through the second diode. In this way, the transistor is protected and damage caused by the short-circuit current is avoided. At the same time, since the short-circuit current mainly flows through the second diode, the load can still be powered to a certain extent. The output is directly shut down by hardware without the need for software intervention, and the protection response speed is fast.

[0090] According to the above embodiment, this embodiment provides a preferred solution, wherein the first diode D1 and the second diode D2 are rectifier diodes.

[0091] According to the above embodiment, this embodiment provides a preferred solution, wherein the first diode D1 and the second diode D2 are diodes connected in anti-phase series in a diode assembly.

[0092] A two-in-one diode is selected so that the voltage drop consistency of the first diode D1 and the second diode D2 can be maintained.

[0093] Preferably, the hard short circuit protection switch circuit is constructed by discrete components. The entire circuit is constructed by discrete components, which can save more costs for products with multiple low-power loads.

[0094] The embodiment of the present application provides a battery, comprising the hard short circuit protection switch circuit mentioned above. The battery has a short circuit protection function.

[0095] Finally, an embodiment of the present application provides an electronic device, comprising a plurality of the above-mentioned hard short circuit protection switch circuits. The plurality of hard short circuit protection switch circuits can be configured with different parameters to adapt to different power loads.

[0096] The hard short-circuit protection switch circuit, battery and electronic device provided by the utility model are introduced in detail above. The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referenced to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the utility model, the utility model can also be improved and modified in a number of ways, and these improvements and modifications also fall within the scope of protection of the claims of the utility model.

[0097] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A hard short circuit protection switch circuit, characterized in that: include: A first diode, a second diode, a first transistor, a second transistor, a first resistor, a second resistor, and a controller; The output end of the controller is connected to the anode of the first diode and the anode of the second diode, the cathode of the first diode is connected to the control end of the second transistor and is grounded through the first resistor, and the second end of the second transistor is grounded; the first end of the second transistor is connected to the control end of the first transistor; The power supply output end is connected to the first end of the first transistor; the second end of the first transistor is grounded through the second resistor and connected to the receiving end of the output load; the cathode of the second diode is connected to the receiving end of the output load.

2. The hard short circuit protection switch circuit according to claim 1, characterized in that: Also includes: The third resistor; A second terminal of the second transistor is grounded through the third resistor.

3. The hard short circuit protection switch circuit according to claim 1, characterized in that: Also includes: a fourth resistor; The output end of the controller is connected to the anode of the first diode and the anode of the second diode through the fourth resistor.

4. The hard short circuit protection switch circuit according to claim 1, characterized in that: The first diode and the second diode are rectifier diodes.

5. The hard short circuit protection switch circuit according to claim 4, characterized in that: A voltage drop of the first diode is equal to a voltage drop of the second diode.

6. The hard short circuit protection switch circuit according to claim 2, characterized in that: The third resistor is an adjustable resistor.

7. The hard short circuit protection switch circuit according to claim 1, characterized in that: The hard short circuit protection switch circuit is constructed by discrete components.

8. The hard short circuit protection switch circuit according to any one of claims 1 to 7, characterized in that: The controller is a single chip microcomputer.

9. A battery, characterized in that: The invention comprises a hard short circuit protection switch circuit as claimed in any one of claims 1 to 8.

10. An electronic device, characterized in that: The invention comprises a plurality of hard short circuit protection switch circuits according to any one of claims 1 to 8.

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