Image sensor and electronic device

Abstract

The utility model relates to an image sensor and electronic equipment, and belongs to the electronic and electrical field. The image sensor comprises a plurality of pixel circuits arranged in multiple rows and columns; the extension direction of the first row direction wires is consistent with the row direction of the plurality of pixel circuits, each pixel circuit is connected with one of the plurality of first row direction wires, and the number of the pixel circuits connected with each first row direction wire is not less than two; at least one reset voltage line; a plurality of reset switches, the first end of each reset switch is connected with one reset voltage line, and the second end of each reset switch is connected with one of the plurality of first row direction wires; and a plurality of reset signal lines, the control end of each reset switch is connected with one of the plurality of reset signal lines, and the reset switch is configured to open a current path between the first end and the second end when the level on the control end is an effective level. According to the invention, the imaging quality of the high-resolution CMOS image sensor can be improved.

Description

Technical Field

[0001] The present application relates to the field of electronic and electrical technology, and in particular to an image sensor and an electronic device. Background Art

[0002] At present, the mainstream image sensors are divided into two categories: Coupled Charge Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS). With the rapid development of CMOS large-scale integrated circuit (LSI) manufacturing technology, CMOS image sensors can be integrated with the functional circuits of the chip to realize intelligent CMOS image sensors. At the same time, the integration of CMOS image sensors has been greatly improved, and the number of pixels per unit area has increased exponentially. Therefore, compared with CCD, CMOS image sensors have better imaging performance.

[0003] With the demand for ultra-high-resolution image sensors in the consumer market and the trend of miniaturization of image sensors, coupled with the rapid development of semiconductor manufacturing process technology, the pixel unit of CMOS image sensors has reached the sub-micron level. The extremely compressed pixel unit seriously affects the size of the photodiode photosensitive area in the pixel unit, thereby affecting the full well capacity (Full Well Capacity) and fill factor (Fill Factor) of the pixel, causing the signal-to-noise ratio (SNR) and dynamic range (Dynamic Range) of the image sensor to deteriorate rapidly, seriously affecting the imaging quality.

[0004] The improvement technology for CMOS image sensors generally focuses on improving pixel sensitivity, optimizing photodiode shape, reducing floating diffusion capacitance or adopting back-illuminated process design to achieve the purpose of optimizing imaging effect. However, since improving pixel sensitivity is restricted by semiconductor materials, optimizing photodiode shape or reducing floating diffusion capacitance has limited improvement effect, and back-illuminated process is too complicated, has low yield rate and high cost, the above improvement methods all have certain limitations. Summary of the invention

[0005] The present application provides an image sensor and an electronic device, which can help improve the imaging quality of a high-resolution CMOS image sensor.

[0006] The present application provides an image sensor, the image sensor comprising:

[0007] A plurality of pixel circuits arranged in multiple rows and columns;

[0008] A plurality of first row-oriented routing lines, wherein the extending direction of the first row-oriented routing lines is consistent with the row direction of the plurality of pixel circuits, each of the pixel circuits is connected to one of the plurality of first row-oriented routing lines, and the number of the pixel circuits connected to each of the first row-oriented routing lines is not less than two;

[0009] at least one reset voltage line;

[0010] A plurality of reset switches, wherein a first end of each of the reset switches is connected to one of the reset voltage lines, and a second end of each of the reset switches is connected to one of the plurality of first row-oriented lines;

[0011] A plurality of reset signal lines, a control end of each of the reset switches is connected to one of the plurality of reset signal lines, and the reset switch is configured to open a current path between the first end and the second end when the level on the control end is a valid level.

[0012] In some possible implementations, each of the first row-oriented wirings is respectively connected to each of the pixel circuits in a row.

[0013] In some possible implementations, each of the first row-oriented wirings is connected to a plurality of consecutive columns of pixel circuits in a row of pixel circuits, and different reset switches of the connected pixel circuits located in the same row are connected to the same reset signal line.

[0014] In some possible implementations, the number of the pixel circuits connected to each of the first row lines is the same.

[0015] In some possible implementations, at least one of the first row-oriented routing lines includes at least two routing segments, the first row-oriented routing line has different routing widths in different routing segments, and the routing width is positively correlated to the distance between the routing segment and the second end of the reset switch to which the first row-oriented routing line is connected.

[0016] In some possible implementations, the image sensor further includes a row driving circuit, the row driving circuit includes a plurality of reset signal output terminals, and the plurality of reset signal lines are connected to the plurality of reset signal output terminals one-to-one.

[0017] In some possible implementations, the image sensor includes a substrate, and the plurality of pixel circuits, the plurality of first row wirings, the at least one reset voltage line, the plurality of reset switches, and the plurality of reset signal lines are all arranged on the substrate.

[0018] In some possible implementations, the image sensor further includes a plurality of second row-oriented routing lines and a plurality of column-oriented routing lines, the second row-oriented routing lines are consistent with the extension direction of the first row-oriented routing lines, the extension direction of the column-oriented routing lines is consistent with the column direction of the plurality of pixel circuits, and each of the pixel circuits is respectively connected to one of the second row-oriented routing lines and one of the column-oriented routing lines; the pixel circuit includes a photosensitive element, a first capacitor, a first switching element, and a second switching element, the photosensitive signal output end of the photosensitive element is respectively connected to one of the first row-oriented routing lines, the first end of the first capacitor, and the control end of the first switching element, the second end of the first capacitor and the ground end of the photosensitive element are both connected to the ground end of the pixel circuit, the first end of the first switching element is connected to one of the reset voltage lines, the second end of the first switching element is connected to the first end of the second switching element, the control end of the second switching element is connected to one of the second row-oriented routing lines, and the second end of the second switching element is connected to one of the column-oriented routing lines, and the first switching element and the second switching element are both configured to open a current path between the first end and the second end when the level on the control end is a valid level.

[0019] In some possible implementations, the image sensor also includes a plurality of third row-oriented routing lines, the third row-oriented routing lines extending in the same direction as the first row-oriented routing lines, and each of the pixel circuits is connected to one of the third row-oriented routing lines; the pixel circuit also includes a third switching element spaced between the photosensitive element and the first capacitor, the first end of the third switching element being connected to a photosensitive signal output end of the photosensitive element, the control end of the third switching element being connected to one of the third row-oriented routing lines, the second end of the third switching element being respectively connected to one of the first row-oriented routing lines, the first end of the first capacitor, and the control end of the first switching element, and the third switching element being configured to open a current path between the first end and the second end when the level on the control end is a valid level.

[0020] The present application also provides an electronic device, which includes any one of the above-mentioned image sensors.

[0021] In the image sensor of the present application, each reset switch is connected to at least two pixel circuits through a first row-oriented wiring, so that the reset switch can simultaneously perform a reset operation for the at least two pixel circuits when the level on the control end is a valid level (that is, the voltage on the circuit node connected to the first row-oriented wiring inside the pixel circuit is reset to the voltage on the reset voltage line), so that each pixel circuit no longer needs to be separately provided with a reset switch, and each reset switch is used in common by the at least two connected pixel circuits; thus, compared with the solution of providing a reset switch in each pixel circuit, the embodiment of the present application can save the layout space of the reset switch inside the pixel area, so that the area occupied by the photosensitive element in the pixel area can be relatively increased, so that the parameters such as the fill factor (FF), full well capacity (FWC), dynamic range (DR), and signal-to-noise ratio (SNR) of the image sensor can be optimized, that is, it can help improve the imaging quality of high-resolution CMOS image sensors and help achieve ultra-high-resolution image sensors with higher imaging performance.

[0022] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0024] Figure 1 is a structural block diagram of an image sensor provided by an embodiment of the present application;

[0025] Figure 2 is a circuit diagram of a pixel circuit of an image sensor provided by an embodiment of the present application;

[0026] Figure 3 yes Figure 2 A circuit timing diagram of the pixel circuit shown;

[0027] Figure 4 is a structural block diagram of another image sensor provided in an embodiment of the present application;

[0028] Figure 5 is a structural block diagram of another image sensor provided in an embodiment of the present application;

[0029] Figure 6 is a schematic diagram of the structure of a pixel circuit in a comparative example;

[0030] Figure 7 is a schematic structural diagram of a pixel circuit of an image sensor provided in an embodiment of the present application;

[0031] Figure 8is a schematic structural diagram of a pixel circuit of another image sensor provided in an embodiment of the present application;

[0032] Fig. 9 It is a structural block diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0033] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0034] The terms used in the embodiments of the present disclosure are only used to explain the embodiments of the present disclosure, and are not intended to limit the present disclosure. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limit, but indicate that there is at least one. Words such as "include" or "include" mean that the elements or objects appearing in front of "include" or "include" include the elements or objects listed after "include" or "include" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0035] Figure 1 is a structural block diagram of an image sensor provided by an embodiment of the present application. Figure 1 The image sensor comprises: a plurality of pixel circuits 11 arranged in a plurality of rows and columns, a plurality of first row-direction wirings G1, at least one reset voltage line VD, a plurality of reset switches 12, and a plurality of reset signal lines RST. The row direction of the plurality of pixel circuits 11 arranged in a plurality of rows and columns is a first direction X, the column direction is a second direction Y, the extension direction of the first row-direction wiring G1 is the first direction X, each pixel circuit 11 is connected to one of the plurality of first row-direction wirings G1, and the number of pixel circuits 11 connected to each first row-direction wiring G1 is not less than two; the first end ( Figure 1 The upper end of each reset switch 12 is connected to a reset voltage line VD. Figure 1 The right end in the middle) is connected to one of the plurality of first row-direction wirings G1, and the control end ( Figure 1The left end in the figure) is connected to one of the multiple reset signal lines RST, and the reset switch 12 is configured to open a current path between the first end and the second end when the level on the control end is a valid level.

[0036] It can be seen that in the above-mentioned image sensor, each reset switch 12 is connected to at least two pixel circuits 11 through a first row-oriented wiring G1, so that the reset switch 12 can simultaneously perform a reset operation for the at least two pixel circuits 11 when the level on the control end is a valid level (that is, the voltage on the circuit node connected to the first row-oriented wiring G1 inside the pixel circuit is reset to the voltage on the reset voltage line VD), so that each pixel circuit 11 no longer needs to be separately provided with a reset switch 12, and each reset switch 12 is used by the at least two connected pixel circuits 11; in this way, compared with the solution of providing a reset switch 12 in each pixel circuit 11, the embodiment of the present application can save the layout space of the reset switch inside the pixel area, so that the area occupied by the photosensitive element in the pixel area can be relatively increased, so that the parameters such as the fill factor (FF), full well capacity (FWC), dynamic range (DR), and signal-to-noise ratio (SNR) of the image sensor can be optimized, that is, it can help improve the imaging quality of the high-resolution CMOS image sensor and help achieve an ultra-high-resolution image sensor with higher imaging performance.

[0037] It should be noted that Figure 1 16 pixel circuits 11 in 4 rows and 4 columns, 4 first row wirings G1, one reset voltage line VD, 4 reset switches 12 and 4 reset signal lines RST are shown, but the number shown is only an example and illustration. The image sensor of the embodiment of the present application can have more pixel circuits 11, first row wirings G1, reset voltage lines VD reset switches 12 and reset signal lines RST according to application requirements.

[0038] It should also be noted that the pixel circuit refers to a circuit structure in an image sensor that is arranged in multiple rows and columns according to a pixel arrangement method (for example, a repeating unit corresponding to a pixel in the photosensitive area); since the basic function of the pixel circuit in the photosensitive area is to read the amount of light within the corresponding pixel area during the exposure time, the pixel circuit needs to be reset before each exposure, that is, the above-mentioned reset switch cooperates with the reset signal line to output a valid level in a timely manner to set the voltage of the corresponding internal node to the reset voltage provided by the reset voltage line, so as to eliminate the influence of the previous exposure on the current exposure as much as possible.

[0039] Figure 2 is a circuit diagram of a pixel circuit of an image sensor provided by an embodiment of the present application. Figure 2The pixel circuit 11 includes a photosensitive element PD, a first capacitor C1, a first switch element M1, a second switch element M2 and a third switch element M3, wherein: the photosensitive signal output terminal ( Figure 2 The photosensitive element PD is taken as a photodiode as an example, and its photosensitive signal output end is the negative electrode of the photodiode) is connected to the first end of the third switch element M3, the control end of the third switch element is connected to a third row wiring G3, the second end of the third switch element M3 is respectively connected to a first row wiring G1, the first end of the first capacitor C1 and the control end of the first switch element M1, the second end of the first capacitor C1 and the ground end of the photosensitive element PD ( Figure 2 In the example, the photosensitive element PD is a photodiode, and its ground terminal is the positive electrode of the photodiode) is connected to the ground terminal of the pixel circuit 11, the first end of the first switch element M1 is connected to a reset voltage line VD, the second end of the first switch element M1 is connected to the first end of the second switch element M2, the control end of the second switch element M2 is connected to a second row wiring G2, and the second end of the second switch element M2 is connected to a column wiring D1. In addition, Figure 2 The reset switch 12 is illustrated as a reset switch element M0. The reset switch element M0, the first switch element M1, the second switch element M2 and the third switch element M3 are all configured to open a current path between the first terminal and the second terminal when the level on the control terminal is a valid level. Figure 2 Each switching element in the figure is exemplified by a transistor operating in a linear region or a saturation region when the gate voltage is a high level voltage.

[0040] Figure 3 yes Figure 2 The circuit timing diagram of the pixel circuit shown in FIG. Figure 2 and Figure 3, each photosensitive cycle includes a first stage T1, a second stage T2 and a third stage T3, wherein: in the first stage T1, the reset signal line RST is at a high level (effective level), thereby the reset switch element M0 is turned on, so that the level on the first row wiring G1 is the high level (effective level) provided by the reset voltage line VD, so that the first switch element is turned on, and at the same time, the second row wiring G2 is at a high level (effective level) and the third row wiring G3 is at a low level, so that the second switch element M2 is turned on and the third switch element M3 is turned off, and the voltage across the first capacitor C1 is reset to the difference between the high level voltage on the reset voltage line and the ground terminal voltage, and a high level voltage is output on the column wiring D1, and its voltage signal can be used as a reference signal for subsequent exposure signals. In the second stage T2, the reset signal line RST is at a low level, so that the reset switch element M0 is closed, and at the same time, the second row-direction routing line G2 is at a high level (effective level), and the third row-direction routing line G3 is at a low level, so that the third switch element M3 remains in a closed state, and the high level voltage on the first row-direction routing line G1 is maintained by the first capacitor C1, so that the first switch element M1 and the second switch element M2 are continuously turned on, and continue to provide the column-direction routing line D1 with a high level voltage that can be used as a reference signal. In the third stage T3, the third row-direction routing line G3 is turned to a high level (effective level) for a period of time, so that the third switch element M3 is turned on during this period, and the photosensitive signal output end of the photosensitive element PD outputs the photosensitive signal to the first capacitor C1 through the first end and the second end of the third switch element M3, and the voltage value of the photosensitive signal is used as the gate voltage of the first switch element M1 to control the current between the first end and the second end of the first switch element M1, so that the column-direction routing line D1 outputs a photosensitive reading signal associated with the photosensitive signal during this period. In this way, by continuously sampling the signal on the column wiring D1 in each photosensitive cycle, the reference signal can be read in the first stage T1 and the second stage T2, and the photosensitive reading signal can be read in the third stage T3. The exposure value of the photosensitive element PD can be calculated by taking the difference between the two.

[0041] Figure 4 is a structural block diagram of another image sensor provided by an embodiment of the present application. Figure 4 ,exist Figure 3On the basis of the circuit structure of the pixel circuit shown, the connection mode of each routing in the image sensor is configured as follows: the second row routing G2 and the third row routing G3 are extended in the same extension direction as the first row routing G1, and the column routing D1 is extended in the second direction Y (column direction of the pixel circuit 11), and each pixel circuit 11 is respectively connected to a second row routing G2, a third row routing G3 and a column routing D1. In this way, since each pixel circuit 11 in the same row is respectively connected to different column routings D1, even if the second row routing G2 provides a high level (effective level) to a row of pixel circuits 11 at the same time, the pixel circuits 11 in the row can also output a light-sensitive reading signal to the connected column routing D1, and the working timings of the pixel circuits 11 in the same row will not conflict with each other; different pixel circuits 11 in the same column of pixel circuits 11 are connected to different second row routings G2, so their third stages T3 can be staggered, so that the working timings of the pixel circuits 11 in the same column will not conflict with each other. Similarly, although the first ends of the first capacitors C1 in the pixel circuits 11 in the same row are connected to the same first row-oriented wiring G1, the reset switch 12 can remain in a closed state outside the first stage T1, so that the pixel circuits 11 outside the first stage T1 will not affect each other through the first row-oriented wiring G1; in addition, different pixel circuits 11 in the same column are connected to different first row-oriented wiring G1, so their first stages T1 can be staggered without affecting each other.

[0042] It can be seen that compared with the solution of separately setting a reset switch 12 in each pixel circuit 11, a row of pixel circuits 11 share a reset switch 12 through a row-direction wiring G1, which can save the layout space of the reset switch 12 inside the pixel area, so that the area occupied by the photosensitive element PD in the pixel area can be relatively increased, thereby optimizing the fill factor (FF), full well capacity (FWC), dynamic range (DR), signal-to-noise ratio (SNR) and other parameters of the image sensor, helping to improve the imaging quality of high-resolution CMOS image sensors and helping to achieve ultra-high-resolution image sensors with higher imaging performance.

[0043] It should be noted that the above-mentioned first capacitor C1 can be, for example, an equivalent capacitor of a floating diffusion region between a transistor of the third switch element M3 and a transistor of the first switch element M1. In addition to being a photodiode, the above-mentioned photosensitive element PD can also be, for example, a grating, a phototransistor, an avalanche photodiode, etc., and may not be limited thereto; the above-mentioned switching element can be realized by any component or circuit assembly having the above-mentioned switching function; the circuit structure of the above-mentioned pixel circuit can omit some components or add more components, such as omitting the third switch element M3 so that the photosensitive signal output end of the photosensitive element PD is directly connected to the first end of the first capacitor C1, the first row wiring G1 and the control end of the first switch element M1, or adding more transistors to realize the reading of the exposure value in a manner similar to the above-mentioned photosensitivity process, which can be realized by referring to the pixel circuit of the image sensor of the relevant technology, and will not be described one by one here.

[0044] Figure 5 is a structural block diagram of another image sensor provided in an embodiment of the present application. Figure 4 and Figure 5 It can be seen that Figure 4 Each first row-direction wiring G1 is connected to each of the pixel circuits 11 in a row, so that the number of reset switches can be saved to the maximum extent, which helps to increase the area of ​​the photosensitive element PD and also reduces the length of the reset signal line RST required to be set; and Figure 5 Each first row-directed wiring G1 is connected to a plurality of consecutive columns of pixel circuits 11 in a row of pixel circuits 11, and different reset switches 12 of the connected pixel circuits located in the same row are connected to the same reset signal line RST. Figure 4 For example, this can help alleviate the problem of uneven sensitivity between different pixels due to the first row line G1 being too long and the voltage drop being too large. In one example, the first half of the pixel circuits in each row of pixel circuits of the image sensor are connected to a first row line G1 and a reset switch, and the second half of the pixel circuits are connected to another first row line G1 and another reset switch, which helps to achieve a balance between the two implementations. Of course, the number of pixel circuits 11 connected to each first row line G1 can be set according to the actual size and application requirements (for example, a larger image sensor application Figure 5 The solution shown is for smaller image sensor applications Figure 4 The present application does not limit this.

[0045] In some possible implementations, the problem of uneven photosensitivity between different pixels can also be alleviated by increasing the routing width of the first row routing G1 by segmentation. For example, at least one first row routing G1 includes at least two routing sections, and the first row routing G1 has different routing widths in different routing sections, and the routing width is positively correlated to the distance between the routing section and the second end of the reset switch 12 to which the first row routing G1 is connected. In this way, the routing width of the routing section farther from the second end of the reset switch is larger, which can help slow down the resistance voltage drop on the first row routing G1, thereby alleviating the problem of uneven photosensitivity between different pixels.

[0046] It should be noted that the circuit structures of the various parts of the above image sensor are merely examples, and the circuit structures of any one or more parts of the image sensor can be replaced by other circuit structures with the same functions. In addition, other circuit structures not shown may be included according to application requirements, and the embodiments of the present application are not limited to this. For example, in some possible implementations, the image sensor also includes a row drive circuit, a plurality of reset signal lines RST are connected one-to-one to a plurality of reset signal output terminals of the row drive circuit, a plurality of second row-direction wirings G2 are connected one-to-one to a plurality of selection signal output terminals of the row drive circuit, and a plurality of third row-direction wirings G3 are connected one-to-one to a plurality of exposure signal output terminals of the row drive circuit. In addition, the image sensor may also include one or more of a correlated double sampling circuit, an amplifier, a column driver, and an analog-to-digital converter, and may not be limited thereto, and will not be described one by one here.

[0047] In some possible implementations, the image sensor includes a substrate, on which structures such as a plurality of pixel circuits 11, a plurality of first row wirings G1, at least one reset voltage line VD, a plurality of reset switches 12, and a plurality of reset signal lines RST are arranged. Thus, any of the above-mentioned image sensors can be manufactured by, for example, film formation and patterning on the substrate through a semiconductor manufacturing process.

[0048] Figure 6 is a schematic diagram of the structure of a pixel circuit in a comparative example. Figure 6 As shown, if the reset switch is set in each pixel circuit, the reset signal line RST and the semiconductor structure thereunder (including two heavily doped N-type semiconductor regions n+) will occupy a large portion of the pixel area, so that the area of ​​the photosensitive element PD has to be reduced accordingly.

[0049] Figure 7 is a schematic diagram of a pixel circuit of an image sensor provided by an embodiment of the present application. Figure 6 and Figure 7 ,because Figure 7The reset switch is omitted, and there is no need to reserve the reset signal line RST and the setting area of ​​the semiconductor structure below it. Therefore, the photosensitive element PD can be relatively enlarged, so that the image sensor can have a larger fill factor (Fill Factor, in a basic pixel unit, the ratio of the photosensitive area of ​​the photodiode to the overall area of ​​the pixel unit), a larger full well capacity (Full Well Capacity, proportional to the equivalent capacitance of the photodiode, and a photodiode with a larger area can have a larger equivalent capacitance), a larger dynamic range (Dynamic Range, the ratio of the maximum observable light intensity of the image sensor to the minimum observable light intensity, a photodiode with a larger area can detect more light in a dim environment and is less likely to reach saturation in a bright environment) and a higher signal-to-noise ratio (Signal-to-Noise Ratio, the ratio of the signal power of the image sensor to the background noise signal power, a photodiode with a larger area can produce a higher power photosensitive signal, and thus a higher signal-to-noise ratio).

[0050] Figure 8 is a schematic diagram of the structure of another pixel circuit of an image sensor provided in an embodiment of the present application. Figure 6 and Figure 8 ,because Figure 7 The reset switch is omitted, and there is no need to reserve the reset signal line RST and the semiconductor structure below it. Therefore, the area of ​​the entire pixel can be reduced while keeping the area of ​​the photosensitive element unchanged, thereby achieving a higher pixel resolution (that is, more pixels are arranged in the same photosensitive area). Figure 7 and Figure 8 The arrangements can be combined with each other to achieve a balance between different aspects of performance according to the application requirements of the image sensor.

[0051] Fig. 9 is a structural block diagram of an electronic device provided in an embodiment of the present application. Fig. 9 The electronic device includes an image sensor 10, which may be any of the above-mentioned image sensors. The electronic device may be any device with a photosensitive or photographing function, such as a camera, a still camera, a video camera, a mobile phone, a tablet computer, a notebook, etc., and may also include a lens, a shutter, a power supply module, etc., which are used in conjunction with the image sensor, and the embodiment of the present application does not limit this.

[0052] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the principles of the present application shall be included in the protection scope of the present application.

Claims

1. An image sensor, characterized in that: The image sensor comprises: A plurality of pixel circuits arranged in multiple rows and columns; A plurality of first row-oriented routing lines, wherein the extending direction of the first row-oriented routing lines is consistent with the row direction of the plurality of pixel circuits, each of the pixel circuits is connected to one of the plurality of first row-oriented routing lines, and the number of the pixel circuits connected to each of the first row-oriented routing lines is not less than two; at least one reset voltage line; A plurality of reset switches, wherein a first end of each of the reset switches is connected to one of the reset voltage lines, and a second end of each of the reset switches is connected to one of the plurality of first row-oriented lines; A plurality of reset signal lines, a control end of each of the reset switches is connected to one of the plurality of reset signal lines, and the reset switch is configured to open a current path between the first end and the second end when the level on the control end is a valid level.

2. The image sensor according to claim 1, characterized in that Each of the first row-oriented wirings is respectively connected to each of the pixel circuits in a row.

3. The image sensor according to claim 1, characterized in that Each of the first row-oriented wirings is connected to a plurality of consecutive columns of pixel circuits in a row of pixel circuits, and different reset switches of the connected pixel circuits located in the same row are connected to the same reset signal line.

4. The image sensor according to claim 3, characterized in that: The number of the pixel circuits connected to each of the first row wirings is the same.

5. The image sensor according to claim 1, characterized in that At least one of the first row-oriented routing lines includes at least two routing sections. The first row-oriented routing line has different routing widths in different routing sections, and the routing widths are positively correlated to the distance between the routing section and the second end of the reset switch connected to the first row-oriented routing line.

6. The image sensor according to claim 1, characterized in that: The image sensor further includes a row driving circuit, the row driving circuit includes a plurality of reset signal output terminals, and the plurality of reset signal lines are connected to the plurality of reset signal output terminals one by one.

7. The image sensor according to claim 1, characterized in that: The image sensor comprises a substrate, and the plurality of pixel circuits, the plurality of first row-direction wirings, the at least one reset voltage line, the plurality of reset switches and the plurality of reset signal lines are all arranged on the substrate.

8. The image sensor according to any one of claims 1 to 7, characterized in that: The image sensor further includes a plurality of second row-oriented wirings and a plurality of column-oriented wirings, wherein the second row-oriented wirings extend in the same direction as the first row-oriented wirings, and the column-oriented wirings extend in the same direction as the columns of the plurality of pixel circuits, and each of the pixel circuits is respectively connected to one of the second row-oriented wirings and one of the column-oriented wirings; The pixel circuit includes a photosensitive element, a first capacitor, a first switching element and a second switching element. The photosensitive signal output end of the photosensitive element is respectively connected to the first row wiring, the first end of the first capacitor and the control end of the first switching element. The second end of the first capacitor and the ground end of the photosensitive element are both connected to the ground end of the pixel circuit. The first end of the first switching element is connected to the reset voltage line, the second end of the first switching element is connected to the first end of the second switching element, the control end of the second switching element is connected to the second row wiring, and the second end of the second switching element is connected to the column wiring. The first switching element and the second switching element are both configured to open a current path between the first end and the second end when the level on the control end is a valid level.

9. The image sensor according to claim 8, characterized in that: The image sensor further includes a plurality of third row-oriented wirings, the third row-oriented wirings and the first row-oriented wirings extend in the same direction, and each of the pixel circuits is connected to one of the third row-oriented wirings; The pixel circuit also includes a third switching element spaced between the photosensitive element and the first capacitor, the first end of the third switching element is connected to the photosensitive signal output end of the photosensitive element, the control end of the third switching element is connected to one of the third row-direction traces, the second end of the third switching element is respectively connected to one of the first row-direction traces, the first end of the first capacitor and the control end of the first switching element, and the third switching element is configured to open a current path between the first end and the second end when the level on the control end is a valid level.

10. An electronic device, characterized in that: The electronic device comprises the image sensor according to any one of claims 1 to 9.

Images