HVPE large-size gallium nitride wafer gallium boat reactor

Abstract

The utility model discloses an HVPE large-size gallium nitride wafer gallium boat reactor. The reactor comprises a gallium boat; a gallium reaction chamber; a main intake pipe; a secondary air inlet; the gas circulation openings are formed in the rest reaction chambers except the bottommost layer in the multi-layer reaction chamber; the gallium reaction outlet is formed in the bottom of the gallium reaction chamber; the mixing chamber is arranged in the gallium boat and located at the bottom of the gallium reaction chamber; the main reaction outlet is formed in the central area of the bottom of the mixing chamber; the auxiliary reaction outlet is formed in the edge area of the bottom of the mixing chamber; one end of the main gas outlet pipe is connected with the bottom of the mixing chamber to separate the main reaction outlet from the auxiliary reaction outlet, and the other end of the main gas outlet pipe is communicated with the center of the bottom of the gallium boat; and an auxiliary gas outlet pipe. The beneficial effects of the utility model are that the gas discharged by the main and auxiliary gas outlet pipes can be uniformly deposited on the surface of the substrate, and the growth size of the gallium nitride wafer can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium nitride production, in particular to an HVPE large-size gallium nitride wafer gallium boat reactor. Background Art

[0002] The main principle of HVPE nitride growth is: using metal gallium as the III-group gallium source, ammonia (NH3) as the V-group nitrogen source, and hydrogen chloride (HCl) as the reaction gas and carried by a carrier gas (hydrogen or nitrogen) through a gallium boat to react with the metal gallium in it to generate gallium chloride (GaCl), which reacts with NH3 above the substrate under the carrier gas (hydrogen or nitrogen) to generate GaN and is deposited on the substrate. The main chemical reactions are as follows:

[0003] 2HCl(g)+2Ga(l)=2GaCl(g)+H2(g)

[0004] GaCl(g)+NH3(g)=GaN(S)+HCl(g)+H2(g)

[0005] Wide bandgap semiconductor materials such as GaN, SiC, diamond and ZnO are called third-generation semiconductors, which have excellent properties such as higher breakdown voltage, smaller dielectric constant, higher saturated electron drift rate, better thermal conductivity, wider energy gap (Eg ≥ ​​2.3 eV), etc. Among them, GaN is very suitable for making high-frequency, high-power and high-density integrated electronic devices due to its more stable chemical properties, high temperature resistance and corrosion resistance.

[0006] Since the internal design of ordinary gallium boats generally has only three to five layers, they can only be used to grow five-inch and smaller wafers, and most of the outlet pipes are cylindrical tubes. Especially when growing on a vertical HVPE machine, the growth of large-size gallium nitride wafers cannot obtain normal and effective atmospheric epitaxial deposition, so this technical bottleneck needs to be broken through with innovation.

[0007] Chinese invention patent publication number CN117646192A discloses a HVPE equipment chamber for reducing parasitic deposition and improving ammonia uniformity, including a nozzle, a substrate located above the nozzle, a cyclone connected to the nozzle outlet end, and a quartz outer liner located outside the substrate and the cyclone; the cyclone is provided with three airflow passages, namely a first airflow passage for NH3 and separation gas to pass through, a second airflow passage for separation gas to pass through, and a third airflow passage for GaCl to pass through; a centrifugal device is provided in the first airflow passage, and when NH3 and separation gas pass through the first airflow passage, the centrifugal device causes NH3 and separation gas to rotate and centrifugally move, and the introduction of the centrifugal device will occupy the internal space of the gallium boat, and at the same time increase the manufacturing cost. Utility Model Content

[0008] The technical problem to be solved by the utility model is that the growth of existing vertical HVPE large-size gallium nitride wafers is not uniform enough, and for this purpose, a HVPE large-size gallium nitride wafer gallium boat reactor is provided.

[0009] The technical solution of the utility model is: a HVPE large-size gallium nitride wafer gallium boat reactor, comprising: a gallium boat; a gallium reaction chamber, the gallium reaction chamber is arranged at the upper part of the gallium boat, and the gallium reaction chamber has a multi-layer reaction chamber in the vertical direction; a main air inlet pipe, one end of the main air inlet is connected to the top center of the gallium boat, and the other end passes through the center of the gallium reaction chamber; a secondary air inlet, there are two secondary air inlets, which are opened at the bottom of the gallium boat and symmetrically distributed on both sides of the main air inlet pipe; a gas flow port, the gas flow port is opened in the remaining reaction chambers except the bottom layer in the multi-layer reaction chamber ; a gallium reaction outlet, the gallium reaction outlet is opened at the bottom of the gallium reaction chamber; a mixing chamber, the mixing chamber is arranged inside the gallium boat and is located at the bottom of the gallium reaction chamber; a main reaction outlet, the main reaction outlet is opened in the bottom central area of ​​the mixing chamber; a secondary reaction outlet, the secondary reaction outlet is opened in the bottom edge area of ​​the mixing chamber; a main air outlet pipe, one end of the main air outlet pipe is connected to the bottom of the mixing chamber to separate the main reaction outlet and the secondary reaction outlet, and the other end is connected to the center of the bottom of the gallium boat; a secondary air outlet pipe, the bottom of the mixing chamber except the main air outlet pipe forms the secondary air outlet pipe.

[0010] In the above scheme, the diameter of the gallium reaction outlet is smaller than the diameter of the gas flow port.

[0011] The main air inlet pipe described in the above scheme is a quartz tube.

[0012] The main air outlet pipe described in the above scheme is a quartz tube.

[0013] The beneficial effect of the utility model is that the gases discharged from the main and auxiliary gas outlet pipes can be evenly deposited on the substrate surface, which can increase the growth size of the gallium nitride wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the utility model;

[0015] In the figure, 1, gallium boat, 2, gallium reaction chamber, 3, main air inlet pipe, 4, auxiliary air inlet, 5, gas flow port, 6, gallium reaction outlet, 7, mixing chamber, 8, main reaction outlet, 9, auxiliary reaction outlet, 10, main air outlet pipe, 11, auxiliary air outlet pipe. DETAILED DESCRIPTION

[0016] The technical scheme in the embodiment of the utility model is clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments of ordinary technicians in this field without creative work are within the protection scope of the utility model.

[0017] like Figure 1 As shown, the utility model comprises: a gallium boat 1; a gallium reaction chamber 2, the gallium reaction chamber is arranged at the upper part of the gallium boat, and the gallium reaction chamber has a plurality of reaction chambers in the vertical direction; a main air inlet pipe 3, one end of the main air inlet is connected to the top center of the gallium boat, and the other end passes through the center of the gallium reaction chamber; an auxiliary air inlet 4, there are two auxiliary air inlets, which are opened at the bottom of the gallium boat and symmetrically distributed on both sides of the main air inlet pipe; a gas flow port 5, the gas flow port is opened in the remaining reaction chambers except the bottom layer in the multi-layer reaction chamber; a gallium reaction outlet 6, the gallium reaction outlet 7 is connected to the gallium reaction chamber 8, and the gallium reaction outlet 9 is connected to the gallium reaction chamber 10; the gallium reaction outlet 10 is connected to the gallium reaction chamber 11; the gallium reaction outlet 11 is connected to the gallium reaction chamber 12; the gallium reaction outlet 12 is connected to the gallium reaction chamber 13; the gallium reaction outlet 13 is connected to the gallium reaction chamber 14; the gallium reaction outlet 14 is connected to the gallium reaction chamber 15; the gallium reaction outlet 15 is connected to the gallium reaction chamber 16; the gallium reaction outlet 16 is connected to the gallium reaction chamber 17; the gallium reaction outlet 18 is connected to the gallium reaction chamber 19; the gallium reaction outlet 19 is connected to the gallium reaction chamber 11 The outlet is opened at the bottom of the gallium reaction chamber; the mixing chamber 7 is arranged inside the gallium boat and located at the bottom of the gallium reaction chamber; the main reaction outlet 8 is opened in the bottom central area of ​​the mixing chamber; the secondary reaction outlet 9 is opened in the bottom edge area of ​​the mixing chamber; the main air outlet pipe 10, one end of the main air outlet pipe is connected to the bottom of the mixing chamber to separate the main reaction outlet and the secondary reaction outlet, and the other end is connected to the bottom center of the gallium boat; the secondary air outlet pipe 11, the bottom of the mixing chamber except the main air outlet pipe forms the secondary air outlet pipe.

[0018] The main air inlet is located vertically at the center of the gallium boat and extends along the axial direction of the gallium boat to the bottom of the gallium reaction chamber; the gas flow port at the top of the gallium reaction chamber is connected to the auxiliary air inlet, and Ga, N2, H2, HCL, and NH3 enter the gallium reaction chamber through the auxiliary air inlet, and the Ga source reacts with N2, H2, and HCL at high temperature by gasification. N2, H2, and HCL are introduced into the main air inlet pipe, and sometimes Si is also introduced. The ventilation volume ratio of the main air inlet pipe and the auxiliary air inlet is different, and the ventilation time is different, so the gasification reaction will be more uniform.

[0019] As a preferred example of the utility model, the gas flow openings of each layer are staggeredly distributed to facilitate sufficient flow of gas in the gallium reaction chamber.

[0020] The mixing chamber is mixed with HCl, H2, N2, and NH3 in different proportions and then exported to the main reaction outlet and the secondary reaction outlet. The main outlet pipe has a variety of styles, including oval tubes, rectangular tubes, special waist-shaped tubes and other large-mouth styles, which can match the area of ​​long and large-sized wafers. The secondary outlet pipe is formed on the periphery of the main outlet to divert part of the gas in the gasification reaction chamber. It can also effectively protect the central main outlet pipe, and the airflow will not be easily dispersed when discharged, so that the gas at the main and secondary outlets can be evenly deposited on the substrate surface.

[0021] When purging and cleaning the cavity, only the main air inlet pipe in the middle is opened, and the secondary air inlet is blocked to protect the gallium source from being purged.

Claims

1. A HVPE large-size gallium nitride wafer gallium boat reactor, characterized by: include: A gallium boat (1); a gallium reaction chamber (2), the gallium reaction chamber being arranged at the upper part of the gallium boat, the gallium reaction chamber having multiple layers of reaction chambers in the vertical direction; a main air inlet pipe (3), one end of the main air inlet pipe being connected to the center of the top of the gallium boat, and the other end passing through the center of the gallium reaction chamber; two auxiliary air inlets (4), the auxiliary air inlets being opened at the bottom of the gallium boat and symmetrically distributed on both sides of the main air inlet pipe; a gas flow port (5), the gas flow port being opened in the reaction chambers of the multiple layers except the bottom layer; a gallium reaction outlet (6), the gallium reaction outlet being opened at The invention relates to a gallium reaction chamber having a bottom; a mixing chamber (7), the mixing chamber being arranged inside the gallium boat and located at the bottom of the gallium reaction chamber; a main reaction outlet (8), the main reaction outlet being opened in the central area of ​​the bottom of the mixing chamber; a secondary reaction outlet (9), the secondary reaction outlet being opened in the edge area of ​​the bottom of the mixing chamber; a main gas outlet pipe (10), one end of the main gas outlet pipe being connected to the bottom of the mixing chamber to separate the main reaction outlet from the secondary reaction outlet, and the other end being connected to the central area of ​​the bottom of the gallium boat; and a secondary gas outlet pipe (11), the portion of the bottom of the mixing chamber other than the main gas outlet pipe forming the secondary gas outlet pipe.

2. The HVPE large-size gallium nitride wafer gallium boat reactor according to claim 1, characterized in that: The diameter of the gallium reaction outlet is smaller than the diameter of the gas flow port.

3. The HVPE large-size gallium nitride wafer gallium boat reactor according to claim 1, characterized in that: The main air inlet pipe is a quartz tube.

4. The HVPE large-size gallium nitride wafer gallium boat reactor according to claim 1, characterized in that: The main gas outlet pipe is a quartz tube.

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