Gigabit network port dual-channel ultra-low-capacitance anti-lightning stroke chip

Abstract

The utility model discloses a gigabit network port dual-channel ultra-low-capacitance anti-lightning stroke chip, and relates to the technical field of semiconductors. The capacity reduction chips are arranged on the silver paste solders on the inner sides of the second pin, the fourth pin, the sixth pin and the eighth pin of the metal lead frame, the electrostatic protection chips are arranged on the silver paste solders on the inner sides of the first pin, the third pin, the fifth pin and the seventh pin of the metal lead frame, and the metal balls are implanted into the electrostatic protection chips. The metal balls above the first pin, the third pin, the fifth pin and the seventh pin of the metal lead frame are electrically connected with the capacity reduction chips on the second pin, the fourth pin, the sixth pin and the eighth pin through metal wires respectively. The peripheries of the metal lead frame, the silver paste solder, the capacitance reducing chip, the electrostatic protection chip, the metal ball and the metal wire are half wrapped with epoxy resin to form a gigabit network port dual-channel ultra-low-capacitance anti-lightning stroke chip structure; the utility model has the advantages of simple wiring, reduced printed circuit board area and chip mounting frequency, reduced cost and wide application prospect, and meets the electrostatic protection requirements of novel electronic products.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a gigabit network port dual-channel ultra-low capacitance lightning protection chip. Background Art

[0002] At present, the implementation of 5G communication technology has promoted the upgrading of various electronic products. The internal and external communication channels of electronic products and their data transmission rates have been improved accordingly. Electronic products are becoming more and more miniaturized, more and more powerful, and the electromagnetic environment they are in is becoming more and more complex. The high-speed transmission signal end chip is easily interfered and damaged by static electricity. Therefore, it is particularly important to configure a considerable amount of electrostatic protection devices in a limited space. The existing technology uses single-channel electrostatic protection devices for electrostatic protection at the high-speed transmission signal end of electronic products. For example, a gigabit network port has four pairs of high-speed transmission signal lines, and an electrostatic protection device with the same number of signal channels is required. This has the following problems: it occupies a lot of printed circuit board area, the wiring is relatively complex, the number of patch times is high, and the cost is high. Based on this, there is an urgent need for a new type of gigabit network port dual-channel ultra-low capacitance lightning protection chip. Utility Model Content

[0003] In view of the deficiencies in the prior art, the purpose of the utility model is to provide a gigabit network port dual-channel ultra-low capacitance lightning protection chip with reasonable structural design, simpler wiring, reduced printed circuit board area and number of patch times, and reduced costs. It meets the electrostatic protection needs of current new electronic products and is easy to promote and use.

[0004] In order to achieve the above-mentioned purpose, the utility model is realized through the following technical scheme: a gigabit network port dual-channel ultra-low capacitance lightning strike resistance chip, including a metal lead frame, silver paste solder, a capacity reduction chip, an electrostatic protection chip, a metal ball, a metal wire and an epoxy resin, wherein silver paste solder is placed on the inner sides of pins 1 to 8 of the metal lead frame, wherein a capacity reduction chip is placed on the silver paste solder on the inner sides of pins 2, 4, 6 and 8, and an electrostatic protection chip is placed on the silver paste solder on the inner sides of pins 1, 3, 5 and 7, and a metal ball is implanted on each electrostatic protection chip; the metal lead frame The metal ball above pin 1 of the frame is electrically connected to the capacity reduction chip on pin 2 through a metal wire, the metal ball above pin 3 of the metal lead frame is electrically connected to the capacity reduction chip on pin 4 through a metal wire, the metal ball above pin 5 of the metal lead frame is electrically connected to the capacity reduction chip on pin 6 through a metal wire, and the metal ball above pin 7 of the metal lead frame is electrically connected to the capacity reduction chip on pin 8 through a metal wire; the periphery of the metal lead frame, silver paste solder, capacity reduction chip, electrostatic protection chip, metal ball, and metal wire is half-wrapped with epoxy resin to form a gigabit network port dual-channel ultra-low capacitance lightning protection chip structure.

[0005] Preferably, the metal ball is made of silver alloy wire or gold wire by sintering; the metal wire is one of silver alloy wire and gold wire.

[0006] The beneficial effects of the utility model are as follows: the wiring of the device is simpler, the area of ​​the printed circuit board and the number of patch times are effectively reduced, the cost is greatly reduced, the electrostatic protection requirements of the current new electronic products are met, the new electronic products are protected, and the application prospects are broad. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The utility model is described in detail below with reference to the accompanying drawings and specific implementation methods;

[0008] Figure 1 It is a structural schematic diagram of the utility model;

[0009] Figure 2 It is the internal circuit diagram of the utility model. DETAILED DESCRIPTION

[0010] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below in conjunction with specific implementation methods.

[0011] Reference Figure 1-2 , this specific implementation adopts the following technical scheme: a gigabit network port dual-channel ultra-low capacitance lightning protection chip, including a metal lead frame A, silver paste solder B, a capacity reduction chip C, an electrostatic protection chip D, a metal ball E, a metal wire F and an epoxy resin G, the inner sides of pins 1-8 of the metal lead frame A are respectively placed with silver paste solder B, wherein the silver paste solder B inside the 2nd, 4th, 6th and 8th pins are each provided with a capacity reduction chip C, the silver paste solder B inside the 1st, 3rd, 5th and 7th pins are each provided with an electrostatic protection chip D, and a metal ball E is implanted on each electrostatic protection chip D; the metal above pin 1 of the metal lead frame A is placed with a capacity reduction chip C, an electrostatic protection chip D, a metal ball E, a metal wire F and an epoxy resin G, wherein the silver paste solder B is placed on the inner sides of pins 2, 4, 6th and 8th pins, and the electrostatic protection chip D is each provided with a metal ball E, and ... electrostatic protection chip D, a metal ball E, a metal wire F and an epoxy resin G, wherein the silver paste solder B is placed The metal ball E is electrically connected to the capacity reduction chip C on pin 2 through the metal wire F, the metal ball E above the pin 3 of the metal lead frame A is electrically connected to the capacity reduction chip C on pin 4 through the metal wire F, the metal ball E above the pin 5 of the metal lead frame A is electrically connected to the capacity reduction chip C on pin 6 through the metal wire F, and the metal ball E above the pin 7 of the metal lead frame A is electrically connected to the capacity reduction chip C on pin 8 through the metal wire F; the metal lead frame A, silver paste solder B, capacity reduction chip C, electrostatic protection chip D, metal ball E, and metal wire F are half-wrapped with epoxy resin G to form a gigabit network port dual-channel ultra-low capacitance lightning protection chip structure.

[0012] It is worth noting that the metal ball E is made of silver alloy wire or gold wire by firing; the metal wire F is made of silver alloy wire or gold wire.

[0013] In this specific implementation, four capacity reduction chips C and four electrostatic protection chips D are connected to a specified circuit through a metal lead frame A, silver paste solder B, metal balls E, and metal wires F, and then half-wrapped with epoxy resin G to form two groups of arrays consisting of two electrostatic protection chips and two capacity reduction chips, thereby realizing bidirectional dual-channel ultra-low capacitance and high-power electrical characteristics.

[0014] This specific implementation is specially designed for the anti-static and lightning protection of gigabit network ports, which can reduce the area of ​​printed circuit boards and the number of patch times, and reduce costs. The device meets the current anti-static and lightning protection requirements of small electronic products and multi-channel gigabit network ports, and has broad market application prospects.

[0015] The above shows and describes the basic principle and main features of the utility model and the advantages of the utility model. Those skilled in the art should understand that the utility model is not limited by the above embodiments. The above embodiments and descriptions are only for explaining the principle of the utility model. Without departing from the spirit and scope of the utility model, the utility model may have various changes and improvements, which fall within the scope of the utility model to be protected. The scope of protection claimed by the utility model is defined by the attached claims and their equivalents.

Claims

1. A Gigabit Ethernet port dual-channel ultra-low capacitance lightning protection chip, characterized in that: The invention comprises a metal lead frame (A), silver paste solder (B), a capacity reduction chip (C), an electrostatic protection chip (D), a metal ball (E), a metal wire (F) and an epoxy resin (G). The silver paste solder (B) is placed on the inner sides of pins 1 to 8 of the metal lead frame (A), wherein a capacity reduction chip (C) is placed on the silver paste solder (B) on the inner sides of pins 2, 4, 6 and 8, and an electrostatic protection chip (D) is placed on the silver paste solder (B) on the inner sides of pins 1, 3, 5 and 7, and a metal ball (E) is implanted on each electrostatic protection chip (D); the metal ball (E) above pin 1 of the metal lead frame (A) is connected to the capacity reduction chip (C) on pin 2 through a metal wire (F). C), the metal ball (E) above the 3rd pin of the metal lead frame (A) is electrically connected to the capacity reduction chip (C) on the 4th pin through the metal wire (F), the metal ball (E) above the 5th pin of the metal lead frame (A) is electrically connected to the capacity reduction chip (C) on the 6th pin through the metal wire (F), and the metal ball (E) above the 7th pin of the metal lead frame (A) is electrically connected to the capacity reduction chip (C) on the 8th pin through the metal wire (F); the periphery of the metal lead frame (A), silver paste solder (B), capacity reduction chip (C), electrostatic protection chip (D), metal ball (E), and metal wire (F) is half-wrapped with epoxy resin (G) to form a gigabit network port dual-channel ultra-low capacitance lightning protection chip structure.

2. The Gigabit Ethernet port dual-channel ultra-low capacitance lightning protection chip according to claim 1, characterized in that: The metal ball (E) is a metal ball made by firing silver alloy wire or gold wire.

3. The Gigabit Ethernet port dual-channel ultra-low capacitance lightning protection chip according to claim 1, characterized in that: The metal wire (F) is a silver alloy wire or a gold wire.

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