Multi-band broadband high-gain power amplifier module
By designing a multi-band broadband high-gain power amplifier module, using three-stage amplifier cascade and GaAs material inverter amplifier, the existing 8-40GHz power amplifier has been solved in China and the performance indicators have not been greatly improved, and a broadband coverage and high gain power amplifier module has been realized.
Patent Information
- Application Number
- CN202421388455.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-17
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2034-06-17
AI Technical Summary
There are few researches in the existing 8-40GHz power amplifiers in China, and they mostly use the frequency band splicing method, resulting in poor versatility and high cost, and no major improvements in the performance indicators in the short term.
A multi-band broadband high-gain power amplifier module is designed, using a three-stage amplifier circuit cascade, including an inverting amplifier and bias circuit made of GaAs material. The printed board is selected as a Rogers 5880 board, achieving broadband coverage and high gain of 8~40GHz.
It realizes a wide bandwidth, low noise figure, strong versatility and low cost power amplifier module, with the advantages of miniaturization, low cost and high reliability, with a gain of 33dB and an output power of 15.8dBm.
Smart Images

Figure CN222691700U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of power amplifiers, in particular to a multi-band broadband high-gain power amplifier module. Background Art
[0002] The development of modern communication technology has promoted the progress of wireless communication systems and equipment. Ultra-wideband wireless transceiver systems and military radars can cover multiple frequency bands and solve problems such as high equipment cost, high power consumption and compatibility. The power amplifier is the core of the RF transmitter, and its quality affects the transmission of the output signal and the overall reliability of the transmitter.
[0003] There is little research on 8-40GHz power amplifiers in China. Most of them use frequency division and splicing of multiple modules to achieve wide-band performance. With the development of domestic semiconductor devices, DC-40GHz power amplifier chips are gradually being localized, but the performance indicators have not been greatly improved in the short term. There are disadvantages such as poor versatility and high cost. Utility Model Content
[0004] The utility model provides a multi-band broadband high-gain power amplifier module, which has the characteristics of wide bandwidth, low noise coefficient, strong versatility, low cost and the like.
[0005] In order to achieve the purpose of the utility model, the technical solution adopted is: a multi-band broadband high-gain power amplifier module, including a power amplifier housing, an amplifier A1, an amplifier A2, a fixed attenuator A3, an amplifier A4 and a fixed attenuator A5, wherein the amplifier A1, the amplifier A2, the fixed attenuator A3, the amplifier A4 and the fixed attenuator A5 are all arranged on a printed board, the printed board is located in the power amplifier housing, the input of the amplifier A1 is connected to the output of the radio frequency signal of the signal source, the output of the amplifier A1 is connected to the input of the amplifier A2, the output of the amplifier A2 is connected to the input of the fixed attenuator A3, the input of the amplifier A4 is connected to the output of the fixed attenuator A3, the output of the amplifier A4 is connected to the input of the fixed attenuator A5, and the output of the fixed attenuator A5 is connected to the input of the radio frequency signal of the signal source.
[0006] As an optimization solution of the utility model, amplifier A1 is a power amplifier that amplifies the input signal power to at least -3.7dBm, amplifier A2 is a power amplifier that amplifies the input signal power to at least 9.3dBm, and amplifier A4 is a power amplifier that amplifies the input signal power to at least 15.8dBm.
[0007] As an optimization solution of the present utility model, amplifier A1, amplifier A2 and amplifier A4 are all amplifiers made of GaAs material.
[0008] As an optimization solution of the utility model, the high-gain power amplifier module also includes a bias circuit, which is arranged at the input end of amplifier A1, amplifier A2 and amplifier A4, and is used to provide a bias voltage for amplifier A1, amplifier A2 and amplifier A4.
[0009] As an optimized solution of the utility model, the bias circuit includes a voltage stabilizing module connected in series and a bypass capacitor connected in parallel.
[0010] As an optimization solution of the utility model, Rogers 5880 plate is selected as the printed circuit board.
[0011] As an optimization solution of the present utility model, amplifier A1, amplifier A2 and amplifier A4 are all inverting amplifiers.
[0012] The utility model has positive effects: 1) The utility model proposes a broadband power amplifier covering dual frequency bands, with a bandwidth of 8 to 40 GHz;
[0013] 2) The utility model adopts an integrated method, which has the characteristics of miniaturization and low cost;
[0014] 3) The utility model adopts a three-stage amplifier circuit cascade, and the power amplifier gain is 33dB, which has the characteristics of high gain and low loss while achieving wide bandwidth operation.
[0015] 4) The utility model has the advantages of simple structure, low cost and high reliability. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The utility model is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.
[0017] Figure 1 It is a schematic diagram of the overall structure of the utility model;
[0018] Figure 2 It is a gain distribution diagram of the utility model;
[0019] Figure 3 It is the input standing wave test curve diagram of the utility model;
[0020] Figure 4 This is the output standing wave test curve diagram of the utility model;
[0021] Figure 5 This is the insertion loss test curve of the utility model. DETAILED DESCRIPTION
[0022] like Figure 1As shown, the utility model discloses a multi-band broadband high-gain power amplifier module, including a power amplifier housing, an amplifier A1, an amplifier A2, a fixed attenuator A3, an amplifier A4 and a fixed attenuator A5, wherein the amplifier A1, the amplifier A2, the fixed attenuator A3, the amplifier A4 and the fixed attenuator A5 are all arranged on a printed board, the printed board is located in the power amplifier housing, the input of the amplifier A1 is connected to the output of the radio frequency signal of the signal source, the output of the amplifier A1 is connected to the input of the amplifier A2, the output of the amplifier A2 is connected to the input of the fixed attenuator A3, the input of the amplifier A4 is connected to the output of the fixed attenuator A3, the output of the amplifier A4 is connected to the input of the fixed attenuator A5, and the output of the fixed attenuator A5 is connected to the input of the radio frequency signal of the signal source. The high-gain power amplifier module also includes two radio frequency connectors, and the overall dimensions of the entire high-gain power amplifier module are: 60*47*15mm (excluding the connector size).
[0023] Amplifier A1 is a power amplifier that amplifies the input signal power to at least -3.7 dBm, amplifier A2 is a power amplifier that amplifies the input signal power to at least 9.3 dBm, and amplifier A4 is a power amplifier that amplifies the input signal power to at least 15.8 dBm.
[0024] Amplifier A1, amplifier A2 and amplifier A4 are all amplifiers made of GaAs (gallium arsenide). Amplifier A1 and amplifier A2 have noise coefficients less than 2.2, and amplifier A2 has a noise coefficient less than 4.
[0025] like Figure 2 As shown, the frequency range of amplifier A1 is DC to 40GHz. The frequency range of amplifier A2 is DC to 40GHz. The frequency range of amplifier A4 is 8 to 40GHz. The bare chip voltage regulator chip design can be placed nearby to reduce the voltage transmission drop, reduce the voltage ripple, and the space is compact, which is conducive to miniaturization. At the same time, two fixed attenuators are added to improve the inter-stage matching and adjust the link gain. Amplifier A1, amplifier A2 and amplifier A4 are all inverting amplifiers, which improve the overall gain of the high-gain power amplifier module.
[0026] Printed circuit boards generally choose boards with low dielectric loss and good heat dissipation characteristics. According to experience, Rogers 5880 boards with a thickness of 0.19mm are generally selected for frequencies between DC and 40GHz as the substrate for watt-level amplifiers to meet the required frequency band.
[0027] Under the 12V supply voltage, the chip is powered by the voltage regulator module. The power amplifier gain and insertion loss test results are as follows: Figure 3 , 4 As shown in 5, it can produce 33dB gain, the output power P-1 can reach 15.8dBm, and the input and output standing waves are ≤2.
[0028] The high-gain power amplifier module also includes a bias circuit, which is arranged at the input end of amplifier A1, amplifier A2 and amplifier A4, and is used to provide bias voltage for amplifier A1, amplifier A2 and amplifier A4. The bias circuit includes a voltage stabilizing module connected in series and a bypass capacitor connected in parallel. By setting the bias circuit, the high-gain power amplifier can work stably, decouple and filter, and filter out various high and low frequency signals, and also has the functions of isolation and energy storage.
[0029] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A multi-band broadband high-gain power amplifier module, characterized in that: The invention comprises a power amplifier housing, an amplifier A1, an amplifier A2, a fixed attenuator A3, an amplifier A4 and a fixed attenuator A5, wherein the amplifier A1, the amplifier A2, the fixed attenuator A3, the amplifier A4 and the fixed attenuator A5 are all arranged on a printed board, the printed board is located in the power amplifier housing, the input of the amplifier A1 is connected to the output of the radio frequency signal of the signal source, the output of the amplifier A1 is connected to the input of the amplifier A2, the output of the amplifier A2 is connected to the input of the fixed attenuator A3, the input of the amplifier A4 is connected to the output of the fixed attenuator A3, the output of the amplifier A4 is connected to the input of the fixed attenuator A5, and the output of the fixed attenuator A5 is connected to the input of the radio frequency signal of the signal source.
2. The multi-band broadband high-gain power amplifier module according to claim 1, characterized in that: Amplifier A1 is a power amplifier that amplifies the input signal power to at least -3.7 dBm, amplifier A2 is a power amplifier that amplifies the input signal power to at least 9.3 dBm, and amplifier A4 is a power amplifier that amplifies the input signal power to at least 15.8 dBm.
3. The multi-band broadband high-gain power amplifier module according to claim 2, characterized in that: The amplifier A1, the amplifier A2 and the amplifier A4 are all amplifiers made of GaAs material.
4. The multi-band broadband high-gain power amplifier module according to claim 3, characterized in that: The high-gain power amplifier module further includes a bias circuit, which is arranged at the input ends of the amplifier A1, the amplifier A2 and the amplifier A4, and is used to provide a bias voltage for the amplifier A1, the amplifier A2 and the amplifier A4.
5. The multi-band broadband high-gain power amplifier module according to claim 4, characterized in that: The bias circuit includes a voltage stabilizing module connected in series and a bypass capacitor connected in parallel.
6. The multi-band broadband high-gain power amplifier module according to claim 5, characterized in that: The printed circuit board is Rogers 5880 board.
7. The multi-band broadband high-gain power amplifier module according to claim 6, characterized in that: The amplifier A1, the amplifier A2 and the amplifier A4 are all inverting amplifiers.