High-voltage silicon stack rectifier bridge plate
By using semi-packaged silicon stack modules, exposed diode dies and technical means to design through trenches and parallel resistors in high-voltage rectifier units, the problems of heat dissipation, stress damage and creepage discharge in the overall package are solved, and higher reliability and stability of the rectifier bridge plate are achieved.
Patent Information
- Application Number
- CN202420554616.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-21
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2034-03-21
AI Technical Summary
The existing high-voltage rectifier units have problems such as poor heat dissipation effect, stress damage and creepage discharge in the overall package, resulting in unstable performance of the rectifier transformer.
A high-voltage silicon stack rectifier bridge is adopted. By using a semi-package form, the diode die is exposed, and a through-trough and a parallel resistor is designed in the bridge body to improve heat dissipation effect and voltage uniformity.
It improves the heat dissipation performance and reliability of the silicon stack module, extends the creepage distance, avoids stress damage, and enhances the stability and operating reliability of the rectifier bridge plate.
Smart Images
Figure CN222692115U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of rectifier bridge plates, in particular to a high-voltage silicon stack rectifier bridge plate. Background Art
[0002] The electrostatic precipitator is a flue gas purification system device used in coal-fired power plants. It is used to remove particulate smoke so that the exhaust flue gas meets national emission standards. The core working principle of the electrostatic precipitator is to use the electrostatic force generated by a high-voltage electric field, namely the Coulomb force, to separate dust particles from gas in the dust-laden airflow. The high-frequency power supply of the electrostatic precipitator is an important device for generating a high-voltage electric field.
[0003] The input power required by the electrostatic precipitator is a high-voltage DC power supply. Therefore, the high-frequency power supply of the electrostatic precipitator generally inputs a three-phase AC 380V power supply. After rectification and inversion, the output voltage is 72kV or 80kV DC high voltage after boosting and rectification by a step-up transformer. The rectifier transformer, as the core component of the high-frequency power supply, determines the overall performance of the power supply, and the performance of the high-power high-voltage rectifier unit inside the transformer directly determines the performance of the rectifier transformer.
[0004] Since the rectifier unit used in high-frequency power supply has high power, multiple diodes and multiple bridge groups are generally connected in series to meet the high power demand. However, the direct use of boards for series and parallel connection of components has a large number of exposed welding points, which is easy to cause creepage and tip discharge.
[0005] Some studies have adopted the form of packaging the series diodes as a whole, but the overall packaging will result in poor heat dissipation of the tube core, causing cracking and damage to the packaging module. In addition, the tube core may be partially damaged due to stress during the module packaging process, thereby reducing the reliability of the rectifier unit, causing damage to the rectifier unit and even causing the rectifier transformer to burn out. Utility Model Content
[0006] In order to improve the above-mentioned form of packaging the series diodes as a whole, the overall packaging will result in poor heat dissipation of the tube core, causing cracking and damage to the packaging module. In addition, the tube core may be partially damaged due to stress during the module packaging process, thereby reducing the reliability of the rectifier unit, causing damage to the rectifier unit and even causing the rectifier transformer to burn out. The utility model provides a high-voltage silicon stack rectifier bridge board.
[0007] The utility model provides a high-voltage silicon stack rectifier bridge board, which adopts the following technical solutions:
[0008] A high-voltage silicon stack rectifier bridge plate comprises a bridge plate body, wherein the bridge plate body is composed of two plates, namely, plate A and plate B, and silicon stack modules are arranged on the upper sides of the plates A and B.
[0009] Through the above technical scheme, it is easy to avoid damage to a single diode in the silicon stack module due to uneven pressure, which would cause a chain reaction leading to damage to the entire silicon stack module or even damage to the transformer. The bridge board body can reduce the resistance of the cooling medium in thermal convection and better take away the heat, thereby improving the heat dissipation effect, further improving the operating reliability and stability of the rectifier bridge board body, and at the same time exposing the diode core to achieve better heat dissipation effect of the main heat source of the diode, thereby improving the heat dissipation performance of the silicon stack module, further improving the reliability and stability of the silicon stack module, and at the same time exposing the diode core also effectively avoids damage to the diode caused by stress effect during overall packaging.
[0010] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, the silicon stack module is composed of a plurality of diodes connected in series, and the diodes connected in series are arranged at an inclined angle of 15°.
[0011] Through the above technical solution, the diodes can be arranged vertically, the heat convection resistance can be reduced, and the heat dissipation performance of the bridge board can be improved.
[0012] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, a resistor is connected in parallel to the lower side of the diode.
[0013] The above technical solution facilitates better voltage balancing of the diodes, thus avoiding damage to a single diode due to uneven voltage, which would further damage the entire silicon stack module, or even the entire bridge board and transformer.
[0014] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, the core portion of the diode is exposed, two connecting leads are led out from the right end of the diode pin, and the two connecting leads are connected, and a connecting lead is led out from the left end of the diode pin.
[0015] Through the above technical solution, it is convenient to connect the silicon stack rectifier bridge board through connecting leads, thereby improving the fixing reliability and the convenience of pin casting.
[0016] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, through grooves are provided on both sides of the A plate and the B plate.
[0017] Through the above technical solution, different welding points can be easily isolated by the through grooves, and the creepage distance between different potential points can be further extended on the basis of the original reliable spacing, so that the reliability of the A plate and the B plate is further improved, especially when the transformer oil continues to age after long-term operation.
[0018] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, ten groups of silicon stack rectifier bridges are arranged on the upper sides of the A board and the B board, and each group of silicon stack rectifier bridges is connected in series.
[0019] Through the above technical solution, it is convenient to ensure the operating stability of the A board and the B board through ten groups of silicon stack rectifier bridges.
[0020] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, the outer side of the silicon stack rectifier bridge is wrapped with a silicone sleeve, and each group of ten groups of the silicon stack rectifier bridges is connected by four silicon stack modules.
[0021] Through the above technical solution, the silicone sleeve can protect and insulate the silicon stack rectifier bridge.
[0022] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, anti-skid pads are provided at the bottom of the A plate and the B plate, and the material of the anti-skid pads is hard rubber.
[0023] Through the above technical solution, the anti-skid pad made of hard rubber material can ensure the insulation of plate A and plate B and has strong anti-skid property.
[0024] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, a plurality of mounting through holes are provided on the tops of the A plate and the B plate.
[0025] Through the above technical solution, a plurality of mounting through holes can enable the A plate and the B plate to be aligned during installation, and the stability of the installation of the A plate and the B plate can be ensured by screws.
[0026] Optionally, in the above-mentioned high-voltage silicon stack rectifier bridge board, the pins of the diode and the resistor are encapsulated with epoxy resin.
[0027] Through the above technical solution, the high-voltage silicon stack module can have excellent physical, mechanical and electrical insulation properties.
[0028] In summary, the present invention has at least one of the following beneficial effects:
[0029] 1. The silicon stack module adopts a semi-encapsulation form, and the densely welded pins are encapsulated to avoid creepage and tip discharge caused by many exposed solder joints and small spacing, while also reducing the requirements for welding process. At the same time, the diode core is exposed to make the heat dissipation effect of the diode heat source better, improve the heat dissipation performance of the silicon stack module, and further improve the reliability and stability of the silicon stack module. The exposed diode core also effectively avoids diode damage caused by stress effect during overall packaging.
[0030] 2. Through grooves are opened between different welding points of the bridge plate body to further extend the creepage distance of different potential points on the basis of normal reliable spacing, reduce the possibility of creepage, and thus improve the reliability and stability of the plate operation.
[0031] 3. Through the silicon stack module, each diode is connected to a resistor in parallel to equalize the voltage of the diodes in the module, so that the voltage shared by each diode is more consistent, avoiding damage to a single diode in the silicon stack module due to uneven voltage, which may cause a chain reaction and lead to damage to the entire silicon stack module or even the transformer.
[0032] 4. By designing the placement direction of the silicon stack module and the silicon stack diode, the diode inclination angle is matched with the silicon stack module inclination angle, so that the diode is ensured to be in a vertical direction in the overall layout of the bridge board body. The bridge board body reduces the resistance of the cooling medium in thermal convection, better takes away the heat, improves the heat dissipation effect, and further improves the operating reliability and stability of the rectifier bridge board body. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] Figure 1 This is the overall front structural diagram of the silicon stack bridge plate;
[0034] Figure 2 This is the structure diagram of the silicon stack module before packaging;
[0035] Figure 3 This is the structural diagram of the silicon stack module after packaging;
[0036] Figure 4 This is the electrical schematic diagram of the bridge board;
[0037] Figure 5 This is the electrical schematic diagram of the silicon stack module.
[0038] In the figure: 1. Bridge board body; 2. A board; 3. B board; 301. Silicon stack rectifier bridge; 4. Silicon stack module; 401. Diode; 402. Resistor; 403. Connecting lead. DETAILED DESCRIPTION
[0039] The following is combined with Figure 1-5 The utility model is described in further detail.
[0040] Please refer to the attached figure in the instruction manual Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 The utility model provides an embodiment: a high-voltage silicon stack rectifier bridge board, including a bridge board body 1, the bridge board body 1 is composed of two plates, A plate 2 and B plate 3, and silicon stack modules 4 are arranged on the upper sides of A plate 2 and B plate 3.
[0041] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5The silicon stack module 4 is composed of a plurality of diodes 401 connected in series, and the diodes 401 connected in series are arranged at an angle of 15°. The diodes 401 are arranged in such a way that the diodes are in a vertical direction in the bridge board, thereby reducing the resistance of the cooling medium and improving the overall heat dissipation performance of the bridge board.
[0042] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 A resistor 402 is connected in parallel to the lower side of the diode 401, and the voltage can be distributed more evenly through the series resistor 402 to achieve better consistency, thereby avoiding damage to a single diode due to uneven voltage, which may lead to damage to the silicon stack module or even damage to the entire bridge board and transformer.
[0043] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 The core part of the diode 401 is exposed, two connecting leads 403 are led out from the right end of the pin of the diode 401, and the two connecting leads 403 are connected, and a connecting lead 403 is led out from the left end of the pin of the diode 401, and the silicon stack rectifier bridge board is conveniently connected through the connecting leads.
[0044] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 Through grooves are provided on both sides of the A plate 2 and the B plate 3. Different welding points are isolated by the through grooves, which can further extend the creepage distance between different potential points on the basis of the original reliable spacing, so that the reliability of the A plate 2 and the B plate 3 is further improved, especially when the transformer oil continues to age after long-term operation.
[0045] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 Ten groups of silicon stack rectifier bridges 301 are arranged on the upper side of the A plate 2 and the B plate 3, and each group of silicon stack rectifier bridges 301 is connected in series. The ten groups of silicon stack rectifier bridges 301 can ensure the operating stability of the A plate 2 and the B plate 3.
[0046] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5The outside of the silicon stack rectifier bridge 301 is wrapped with a silicone sleeve. Each of the ten groups of silicon stack rectifier bridges 301 is connected by four silicon stack modules 4. The silicone sleeve can protect the silicon stack rectifier bridge 301 and can insulate it.
[0047] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 The bottom of the A plate 2 and the B plate 3 are both provided with anti-skid pads, and the material of the anti-skid pads is hard rubber. The anti-skid pads made of hard rubber can ensure the insulation of the A plate 2 and the B plate 3 and have strong anti-skid properties.
[0048] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 A plurality of mounting through holes are provided on the top of the A plate 2 and the B plate 3. The plurality of mounting through holes can align the A plate 2 and the B plate 3 during installation, and can ensure the stability of the installation of the A plate 2 and the B plate 3 by screws.
[0049] See the attached drawings in the specification Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 The pins of the diode 401 and the resistor 402 are both encapsulated with epoxy resin. Epoxy resin has excellent physical, mechanical and electrical insulation properties and can be bonded to a wide variety of materials.
[0050] Working principle: When using the high-voltage silicon stack rectifier bridge board, a semi-encapsulation form is adopted through the silicon stack module 4. On the one hand, the densely welded pins are encapsulated to avoid creepage and tip discharge caused by the small spacing of exposed solder joints, while also reducing the requirements for welding process. On the other hand, the core of the diode 401 is exposed, so that the heat dissipation effect of the main heat source of the diode 401 is better, the heat dissipation performance of the silicon stack module 4 is improved, and the reliability and stability of the silicon stack module 4 are further improved. At the same time, the exposed core of the diode 401 also effectively avoids damage to the diode caused by stress effect during the overall packaging.
[0051] Through grooves are provided between different welding points of the bridge plate body 1, thereby further extending the creepage distance of different potential points on the basis of normal reliable spacing, reducing the possibility of creepage, and thus improving the reliability and stability of the plate operation.
[0052] In the utility model, the silicon stack module 4 uses each diode 401 to be connected in parallel with a resistor 402 to perform voltage equalization on the diodes 401 in the module, so that the voltage shared by each diode 401 is more consistent, thereby avoiding damage to a single diode 401 in the silicon stack module 4 due to uneven voltage, thereby causing a chain reaction that leads to damage to the entire silicon stack module 4 or even damage to the transformer.
[0053] The utility model comprehensively designs the placement direction of the silicon stack module 4 and the placement direction of the silicon stack diode 401, and matches the inclination angle of the diode 401 with the inclination angle of the silicon stack module 4, so that the diode 401 is ensured to be in a vertical direction in the overall layout of the bridge board body 1, thereby reducing the cooling medium resistance in heat convection through the bridge board body 1, better taking away heat, improving the heat dissipation effect, and further improving the operating reliability and stability of the rectifier bridge board body 1.
[0054] The above are all preferred embodiments of the present utility model, and are not intended to limit the protection scope of the present utility model. Therefore, any equivalent changes made based on the structure, shape, and principle of the present utility model should be included in the protection scope of the present utility model.
Claims
1. A high voltage silicon stack rectifier bridge board, comprising a bridge board body (1), characterized in that: The bridge plate body (1) is composed of two plate members, namely, a plate A (2) and a plate B (3), and silicon stack modules (4) are arranged on the upper sides of the plate A (2) and the plate B (3).
2. A high voltage silicon stack rectifier bridge board according to claim 1, characterized in that: The silicon stack module (4) is composed of a plurality of diodes (401) connected in series, and the diodes (401) connected in series are arranged at an inclined angle of 15°.
3. A high voltage silicon stack rectifier bridge board according to claim 2, characterized in that: A resistor (402) is connected in parallel to the lower side of the diode (401).
4. A high voltage silicon stack rectifier bridge board according to claim 3, characterized in that: The tube core portion of the diode (401) is exposed, two connecting leads (403) are led out from the right end of the tube pin of the diode (401), and the two connecting leads (403) are connected, and one connecting lead (403) is led out from the left end of the tube pin of the diode (401).
5. The high voltage silicon stack rectifier bridge board according to claim 1, characterized in that: Through grooves are provided on both sides of the A plate (2) and the B plate (3).
6. The high voltage silicon stack rectifier bridge board according to claim 1, characterized in that: Ten groups of silicon stack rectifier bridges (301) are arranged on the upper sides of the A plate (2) and the B plate (3), and each group of silicon stack rectifier bridges (301) is connected in series.
7. A high voltage silicon stack rectifier bridge board according to claim 6, characterized in that: The outer side of the silicon stack rectifier bridge (301) is wrapped with a silicone sleeve, and each of the ten groups of silicon stack rectifier bridges (301) is connected by four silicon stack modules (4).
8. The high voltage silicon stack rectifier bridge board according to claim 1, characterized in that: The bottoms of the A plate (2) and the B plate (3) are both provided with anti-skid pads, and the material of the anti-skid pads is hard rubber.
9. The high voltage silicon stack rectifier bridge board according to claim 1, characterized in that: The tops of the A plate (2) and the B plate (3) are each provided with a plurality of mounting through holes.
10. The high voltage silicon stack rectifier bridge board according to claim 2, characterized in that: The pins of the diode (401) and the resistor (402) are both packaged with epoxy resin.