A dry etching device
By designing a dry etching device and using a speed control plate and a speed control device to control the gas output, the problems of uneven etching and rate reduction caused by load effects in plasma etching are solved, and a more efficient and accurate etching effect is achieved.
Patent Information
- Application Number
- CN202421341226.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-13
- Publication Date
- 2025-04-01
- Estimated Expiration
- 2034-06-13
AI Technical Summary
During plasma etching, the load effect leads to a decrease in the etching rate or uneven etching, making it difficult to accurately control the etching effect.
A dry etching device is designed, including a closed reaction chamber and a gas source, the output port of the gas source is in communication with the reaction chamber, and a speed control plate and a speed control device are installed in the reaction chamber. The speed control device controls the opening and closing time of the air outlet through components such as the opening and closing door, vortex spring and electromagnetic coil, thereby adjusting the gas output time and speed, and realizing etching control at different locations.
By purifying gas, uniform gas distribution and precisely controlling the etching time, the etching quality is improved, the problems of uneven etching and reduced rate are solved, and a more accurate etching effect is achieved.
Smart Images
Figure CN222705441U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of chip production, and particularly relates to dry etching equipment. Background Art
[0002] Plasma etching is a commonly used method of dry etching. Plasma etching decomposes the injected gas into plasma, and then bombards the wafer to be etched with radio frequency, so that the thin film falls off to achieve the etching effect.
[0003] The load effect is one of the most common problems in etching, which mainly refers to the effect of reduced etching rate or uneven etching caused by insufficient reactive plasma during the etching process. The thickness of the film covered on the corresponding wafer is not necessarily uniform, and the required etching depth is different. The etching effect can be accurately controlled by controlling the amount of plasma and the etching rate. First, the uniformity of the gas in the etching chamber is improved, and then the reaction time is reduced in places where the required etching depth is shallower and the film is thinner, so as to improve the etching quality. Utility Model Content
[0004] In view of the problems mentioned in the background technology, the purpose of the present invention is to provide a dry etching device to solve the problems mentioned in the background technology.
[0005] The above technical objectives of the utility model are achieved through the following technical solutions:
[0006] A dry etching device comprises a closed reaction chamber and a gas source, wherein the output port of the gas source is connected to the reaction chamber, a speed regulating plate is installed in the reaction chamber, a plurality of gas outlets are provided on the speed regulating plate, and a speed regulating device for adjusting the gas outlet time of the gas outlet is correspondingly installed on the gas outlet; the speed regulating device comprises a switch door, which is installed on the speed regulating plate through a volute spring, an electromagnetic coil is also installed on the speed regulating plate on the other side of the switch door, and a magnet is installed on one end of the switch door close to the electromagnetic coil.
[0007] As a preferred technical solution, the speed regulating device also includes a mounting frame, and the two ends of the spiral spring are fixedly connected to the switch door and the mounting frame respectively.
[0008] As a preferred technical solution, the speed regulating device also includes a mounting frame, and the two ends of the spiral spring are fixedly connected to the switch door and the mounting frame respectively.
[0009] As a preferred technical solution, the spiral spring is always in a compressed state, and the end of the electromagnetic coil close to the magnet after being energized is the same-phase electrode as the magnet.
[0010] As an optimal technical solution, the switch door has an open state and a closed state. When the switch door is in the open state, the electromagnetic coil is energized, the magnet and the electromagnetic coil repel each other, and the deformation of the scroll spring increases; when the switch door is in the closed state, the electromagnetic coil is de-energized, the deformation of the scroll spring decreases, and the switch door blocks the air outlet.
[0011] As a preferred technical solution, the spiral spring is always in a stretched state, and the polarity of the end of the electromagnetic coil close to the switch door after power is turned on is different from that of the magnet.
[0012] As an optimal technical solution, the switch door has an open state and a closed state. When the switch door is in the open state, the electromagnetic coil is de-energized and the deformation of the scroll spring is reduced; when the switch door is in the closed state, the electromagnetic coil is energized, the magnet and the electromagnetic coil are attracted, the deformation of the scroll spring increases, and the switch door blocks the air outlet.
[0013] As a preferred technical solution, a purifier is further installed between the reaction chamber and the gas source, the air inlet of the purifier is connected to the air outlet of the gas source, and the air outlet of the purified gas is connected to the air inlet of the reaction chamber.
[0014] As a preferred technical solution, a packing tower for uniform gas is installed in the reaction chamber, and the packing tower is located above the speed regulating plate.
[0015] Beneficial Effects
[0016] The device purifies and removes impurities before gas ionization to improve ionization quality; the gas in the reaction chamber is made more uniform by setting a packing tower to provide etching uniformity; a speed regulating plate and a speed regulating device are set so that the gas at different positions can be controlled to achieve a better etching effect.
[0017] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 This is a front view of a dry etching device proposed by the utility model;
[0019] Figure 2 A three-dimensional structural cross-sectional view of a speed regulating device and an air outlet of a dry etching device proposed by the utility model;
[0020] Figure 3 Based Figure 2 A magnified view of point A.
[0021] Figure numerals: 1, gas source; 2, purifier; 3, packing tower; 4, speed regulating plate; 41, air outlet; 42, switch door; 43, mounting groove; 44, electromagnetic coil; 45, magnet; 46, mounting frame; 47, scroll spring; 5, upper electrode; 6, lower electrode; 7, reaction chamber. DETAILED DESCRIPTION
[0022] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar symbols throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.
[0023] Example 1
[0024] refer to Figures 1 to 3 The dry etching device described in this embodiment includes a closed reaction chamber 7, a gas source 1 and a purifier 2, the output port of the gas source 1 is connected to the input port of the purifier 2, and the output port of the purifier 2 is connected to the reaction chamber 7.
[0025] A packing tower 3 for uniform gas is installed in the reaction chamber 7. A speed regulating plate 4 is installed in the reaction chamber 7 below the packing tower 3. The speed regulating plate 7 is provided with a plurality of gas outlet holes 41. A speed regulating device is correspondingly installed on the gas outlet holes 41. The speed regulating device includes a switch door 42. The switch door 42 is installed on the speed regulating plate 7 through a mounting frame 46. A volute spring 47 which is always in a compressed state is installed between the switch door 42 and the mounting frame 46. A mounting groove 43 is provided on the speed regulating plate 47 on the side of the gas outlet hole 41 away from the mounting frame 46. An electromagnetic coil 44 is installed in the mounting groove 43, and a magnet 45 is installed on the switch door 42. The end of the electromagnetic coil 44 close to the magnet 45 is the same phase electrode as the magnet 45. The switch door 42 has an open state and a closed state. When the switch door 42 is in the open state, the electromagnetic coil 44 is energized, the magnet 45 and the electromagnetic coil 44 repel each other, and the deformation of the volute spring 47 increases; when the switch door 42 is in the closed state, the electromagnetic coil 44 is de-energized, the deformation of the volute spring 47 decreases, and the switch door 42 blocks the air outlet 41.
[0026] Preferably, the speed regulating plate 4 is provided with a slot for accommodating the magnet 45 when the switch door 42 is closed.
[0027] An upper electrode 5 and a lower electrode 6 are also installed in the reaction chamber 7 . The upper electrode 5 and the lower electrode 6 are both located below the speed regulating plate 4 . The wafer to be etched is located below the upper electrode 5 and above the lower electrode 6 .
[0028] In summary, the gas in the gas source 1 is purified by the purifier 2 to remove excess impurities and improve the etching quality. After the gas enters the reaction chamber 7, the gas gradually diffuses from the place close to the gas outlet of the purifier 2 to the distance, so the gas concentration and flow rate at different positions are different. By setting the packing tower 3, the packing tower 3 has a porous structure to make the gas output uniform. The film thickness at different positions of the wafer after coating is different, and the depth of etching required at different positions is different. When the rate of plasma bombardment is the same, the required depth can be accurately etched by controlling the etching time at different positions.
[0029] In order to achieve the above purpose, the thickness of etching required at different positions is measured in advance, a speed regulating plate 4 is added, and then multiple groups of air outlets 41 are opened on the speed regulating plate 4. Under the condition of uniform gas flow rate at various positions, a more accurate etching effect can be obtained by controlling the etching time at different positions, that is, controlling the time of air outlet 41: when the etching depth is short, the air outlet time of air outlet 41 is shorter, and the switch door 42 is closed in advance. Under the normal etching state, all electromagnetic coils 44 are fully energized. At this time, the electromagnetic coils 44 and the magnets 45 repel each other with the same polarity, and the switch door 42 is opened. The electromagnetic coils 44 of the switch door 42 that needs to be closed in advance are de-energized, the electromagnetic coils 44 are demagnetized, and the switch door 42 is closed under the action of the volute spring 47.
[0030] Example 2
[0031] As another embodiment, the spiral spring 47 is always in a stretched state. After being energized, the polarity of the end of the electromagnetic coil 44 close to the switch door 42 is different from that of the magnet 45. When the switch door 42 is in the open state, the electromagnetic coil 44 is de-energized and the deformation of the spiral spring 47 is reduced; when the switch door 42 is in the closed state, the electromagnetic coil 44 is energized, the magnet 45 and the electromagnetic coil 44 are attracted, the deformation of the spiral spring 47 is increased, and the switch door 42 blocks the air outlet 41.
[0032] Under normal etching conditions, all electromagnetic coils 44 are powered off, and the switch door 42 is opened under the contraction force of the spiral spring 47. The electromagnetic coil 44 of the switch door 42 that needs to be closed in advance is energized, the magnet 45 and the electromagnetic coil 44 are attracted, and the switch door 42 is automatically closed.
[0033] It should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0035] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0036] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0037] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.
Claims
1. A dry etching device, comprising a closed reaction chamber (7) and a gas source (1), wherein an output port of the gas source (1) is connected to the reaction chamber (7), characterized in that: A speed regulating plate (4) is installed in the reaction chamber (7). The speed regulating plate (4) is provided with a plurality of groups of gas outlet holes (41). The gas outlet holes (41) are correspondingly provided with speed regulating devices for regulating the gas outlet time of the gas outlet holes (41). The speed regulating device comprises a switch door (42). The switch door (42) is installed on the speed regulating plate (4) via a spiral spring (47). An electromagnetic coil (44) is also installed on the speed regulating plate (4) on the other side of the switch door (42). A magnet (45) is installed on one end of the switch door (42) close to the electromagnetic coil (44).
2. The dry etching equipment according to claim 1, characterized in that: The speed regulating device also includes a mounting frame (46), and two ends of the spiral spring (47) are respectively fixedly connected to the switch door (42) and the mounting frame (46).
3. The dry etching equipment according to claim 1, characterized in that: The speed regulating device also includes a mounting groove (43), and the electromagnetic coil (44) is mounted in the mounting groove (43).
4. The dry etching equipment according to claim 1, characterized in that: The spiral spring (47) is always in a compressed state, and the end of the electromagnetic coil (44) close to the magnet (45) after being energized is the same phase electrode as the magnet (45).
5. The dry etching equipment according to claim 4, characterized in that: The switch door (42) has an open state and a closed state. When the switch door (42) is in the open state, the electromagnetic coil (44) is energized, the magnet (45) and the electromagnetic coil (44) repel each other, and the spiral spring (47) increases in deformation. When the switch door (42) is in the closed state, the electromagnetic coil (44) is de-energized, the spiral spring (47) decreases in deformation, and the switch door (42) blocks the air outlet (41).
6. The dry etching equipment according to claim 1, characterized in that: The spiral spring (47) is always in a stretched state, and the polarity of the end of the electromagnetic coil (44) close to the switch door (42) after being energized is different from that of the magnet (45).
7. The dry etching equipment according to claim 6, characterized in that: The switch door (42) has an open state and a closed state. When the switch door (42) is in the open state, the electromagnetic coil (44) is powered off and the volute spring (47) is deformed to reduce. When the switch door (42) is in the closed state, the electromagnetic coil (44) is powered on, the magnet (45) and the electromagnetic coil (44) are attracted, the volute spring (47) is deformed to increase, and the switch door (42) blocks the air outlet (41).
8. The dry etching equipment according to claim 1, characterized in that: A purifier (2) is also installed between the reaction chamber (7) and the gas source (1); the gas inlet of the purifier (2) is connected to the gas outlet of the gas source (1), and the gas outlet of the purifier (2) is connected to the gas inlet of the reaction chamber (7).
9. The dry etching equipment according to claim 1, characterized in that: A packing tower (3) for uniform gas is installed in the reaction chamber (7), and the packing tower (3) is located above the speed regulating plate (4).