A bridge structure of surface acoustic wave filter

Abstract

The utility model relates to the field of semiconductor technology, and in particular to a bridge structure of a surface acoustic wave filter, comprising a bus bar, a bus bar thickening layer and a dielectric layer located between the bus bar and the bus bar thickening layer, the dielectric layer comprising a top surface, a bottom surface and a side surface connecting the top surface and the bottom surface, the side surface is provided with a receiving component for the bus bar thickening layer to extend into, the receiving component comprises a plurality of slots extending from the top surface to the bottom surface, and the utility model effectively increases the contact area between the dielectric layer and the bus bar thickening layer by arranging the receiving component on the side surface of the dielectric layer, thereby improving the electrical performance of the device and the reliability at the same time, and can effectively optimize the problem of loss of the bus bar thickening layer, reduce the coating time of the product, reduce the production cost of the product, and improve the reliability of the product and the product performance index.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a bridge structure of a surface acoustic wave filter. Background Art

[0002] The chip miniaturization of the surface acoustic wave filter is closely related to the realization of the bridge structure. In order to improve the reliability and electrical performance indicators of the surface acoustic wave filter bridge structure, the current mainstream implementation scheme is realized through simple graphics such as rectangular boundaries. The bridge structure is a dielectric layer, the lower part is a group of bus bars, and the upper part is a bus bar thickening layer, so as to achieve the isolation of the intersecting bus bar lines. The current mainstream bus bar thickening layer adopts an easy-to-peel vertically incident evaporative coating. The side wall of the bridge is prone to reliability problems and poor electrical performance indicators due to thin thickness. To improve this problem, the current mainstream method is to increase the coating thickness by a large proportion to make the side wall of the bridge thicker by the same proportion. Therefore, improving electrical performance indicators and reducing costs are urgent tasks. Summary of the invention

[0003] The utility model aims to solve the above-mentioned shortcomings in the prior art and proposes a bridge structure of a surface acoustic wave filter.

[0004] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0005] A bridging structure of a surface acoustic wave filter is designed, comprising a bus bar, a bus bar thickening layer and a dielectric layer located between the bus bar and the bus bar thickening layer, the dielectric layer comprising a top surface, a bottom surface and a side surface connecting the top surface and the bottom surface, the side surface is provided with a receiving component for the bus bar thickening layer to extend into, the receiving component comprising a plurality of slots extending from the top surface to the bottom surface.

[0006] Furthermore, the cross-section of the trough body is semicircular.

[0007] Furthermore, the diameter of the groove body is not less than 5um.

[0008] Furthermore, the cross section of the trough body is a regular polygon.

[0009] Furthermore, the vertical distance from the bottom of the trough body to the side surface is not less than 5um.

[0010] Furthermore, the cross section of the trough body is a semicircle and a regular polygon distributed at intervals.

[0011] Furthermore, the diameter of the semicircle is not less than 5um.

[0012] Furthermore, the vertical distance from the bottom of the regular polygon to the side surface is not less than 5um.

[0013] The utility model provides a bridge structure for a surface acoustic wave filter, which has the following beneficial effects:

[0014] The utility model arranges a containing component on the side of the dielectric layer, so that the contact area between the dielectric layer and the bus bar thickening layer is effectively increased, the electrical performance of the device is improved, and the reliability is improved at the same time. It can effectively optimize the problem of bus bar thickening layer loss, reduce the coating time of the product, reduce the production cost of the product, and improve the reliability and performance indicators of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the bridge structure of the surface acoustic wave filter;

[0016] Figure 2 A side view of a bridge structure for a surface acoustic wave filter;

[0017] Figure 3 is a schematic diagram of the dielectric layer structure;

[0018] Figure 4 It is a top view of the dielectric layer in the first embodiment of the utility model;

[0019] Figure 5 It is a top view of the dielectric layer in the second embodiment of the utility model;

[0020] Figure 6 It is a top view of the dielectric layer in the third embodiment of the utility model; DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0022] Embodiment 1, refer to Figure 1-4 A bridge structure of a surface acoustic wave filter includes a bus bar 1, a bus bar thickening layer 2, and a dielectric layer 3 located between the bus bar 1 and the bus bar thickening layer 2. The dielectric layer 3 includes a top surface 301, a bottom surface 302, and a side surface 303 connecting the top surface 301 and the bottom surface 302. The side surface 303 is provided with a receiving component 4 for the bus bar thickening layer 2 to extend into. The receiving component 4 includes a plurality of slots 401 extending from the top surface 301 to the bottom surface 302.

[0023] The utility model sets a receiving component 4 on the side 303 of the dielectric layer 3, so that the contact area between the dielectric layer 3 and the bus bar thickening layer 2 is effectively increased, the electrical performance of the device is improved, and the reliability is improved. It can effectively optimize the loss problem of the bus bar thickening layer 2, reduce the coating time of the product, reduce the production cost of the product, and improve the reliability and performance indicators of the product.

[0024] In an optional implementation of the present invention, the cross section of the tank body 401 is semicircular.

[0025] In an optional implementation of the present invention, the diameter of the groove body is not less than 5um.

[0026] Example 2, refer to Figure 1-3 as well as Figure 5 A bridge structure of a surface acoustic wave filter includes a bus bar 1, a bus bar thickening layer 2, and a dielectric layer 3 located between the bus bar 1 and the bus bar thickening layer 2. The dielectric layer 3 includes a top surface 301, a bottom surface 302, and a side surface 303 connecting the top surface 301 and the bottom surface 302. The side surface 303 is provided with a receiving component 4 for the bus bar thickening layer 2 to extend into. The receiving component 4 includes a plurality of slots 401 extending from the top surface 301 to the bottom surface 302.

[0027] The utility model sets a receiving component 4 on the side 303 of the dielectric layer 3, so that the contact area between the dielectric layer 3 and the bus bar thickening layer 2 is effectively increased, the electrical performance of the device is improved, and the reliability is improved. It can effectively optimize the loss problem of the bus bar thickening layer 2, reduce the coating time of the product, reduce the production cost of the product, and improve the reliability and performance indicators of the product.

[0028] In an optional implementation of the present invention, the cross section of the tank body 401 is a regular polygon.

[0029] In an optional implementation of the present invention, the vertical distance from the bottom of the groove body 401 to the side surface 303 is not less than 5 um.

[0030] Example 3, refer to Figure 1-3 as well as Figure 6 A bridge structure of a surface acoustic wave filter includes a bus bar 1, a bus bar thickening layer 2, and a dielectric layer 3 located between the bus bar 1 and the bus bar thickening layer 2. The dielectric layer 3 includes a top surface 301, a bottom surface 302, and a side surface 303 connecting the top surface 301 and the bottom surface 302. The side surface 303 is provided with a receiving component 4 for the bus bar thickening layer 2 to extend into. The receiving component 4 includes a plurality of slots 401 extending from the top surface 301 to the bottom surface 302.

[0031] The utility model sets a receiving component 4 on the side 303 of the dielectric layer 3, so that the contact area between the dielectric layer 3 and the bus bar thickening layer 2 is effectively increased, the electrical performance of the device is improved, and the reliability is improved. It can effectively optimize the loss problem of the bus bar thickening layer 2, reduce the coating time of the product, reduce the production cost of the product, and improve the reliability and performance indicators of the product.

[0032] In an optional implementation of the present invention, the cross section of the tank body 401 is a semicircle and a regular polygon that are spaced apart.

[0033] In an optional implementation of the present invention, the diameter of the semicircle is not less than 5 um, and the vertical distance from the bottom of the regular polygon to the side surface 303 is not less than 5 um.

[0034] The above are only preferred specific implementation methods of the utility model, but the protection scope of the utility model is not limited to this. Any technician familiar with the technical field within the technical scope disclosed by the utility model, who makes equivalent replacements or changes based on the technical scheme and utility model concept of the utility model, should be covered by the protection scope of the utility model.

Claims

1. A bridge structure of a surface acoustic wave filter, comprising a bus bar (1), a bus bar thickening layer (2), and a dielectric layer (3) located between the bus bar (1) and the bus bar thickening layer (2), wherein the dielectric layer (3) comprises a top surface (301), a bottom surface (302), and a side surface (303) connecting the top surface (301) and the bottom surface (302), characterized in that: The side surface (303) is provided with a receiving assembly (4) for the busbar thickening layer (2) to extend into, and the receiving assembly (4) comprises a plurality of slots (401) extending from the top surface (301) to the bottom surface (302).

2. The bridge structure of the surface acoustic wave filter according to claim 1, characterized in that: The cross section of the tank body (401) is semicircular.

3. The bridge structure of the surface acoustic wave filter according to claim 2, characterized in that: The diameter of the groove body (401) is not less than 5 um.

4. The bridge structure of the surface acoustic wave filter according to claim 1, characterized in that: The cross section of the tank body (401) is a regular polygon.

5. The bridge structure of the surface acoustic wave filter according to claim 4, characterized in that: The vertical distance from the bottom of the groove body (401) to the side surface (303) is not less than 5 um.

6. The bridge structure of the surface acoustic wave filter according to claim 1, characterized in that: The cross section of the trough body (401) is a semicircle and a regular polygon that are distributed at intervals.

7. The bridge structure of the surface acoustic wave filter according to claim 6, characterized in that: The diameter of the semicircle is not less than 5um.

8. The bridge structure of the surface acoustic wave filter according to claim 6, characterized in that: The vertical distance from the bottom of the regular polygon to the side surface (303) is not less than 5 um.

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