Self-powered integrated micro LED transparent display chip and display device

Abstract

The utility model provides a self-powered integrated micro LED transparent display chip and a display device, in which a first semiconductor layer is covered on a transparent substrate; a first area and a second area are arranged on the first side of the first semiconductor layer away from the transparent substrate, a light-emitting layer, a second semiconductor layer, a transparent electrode layer, a hole transport layer, a perovskite absorption layer, an electron transport layer and a first electrode are stacked from the first area in a direction away from the first side, the second electrode covers the second area of ​​the first semiconductor layer, and the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode on the first area are isolated from the second electrode. The self-powered integrated micro LED transparent display chip of the utility model can achieve self-powering and high transparency.

Description

Technical Field

[0001] The utility model relates to the technical field of LEDs, and in particular to a self-powered integrated micro LED transparent display chip, and also to a display device using the self-powered integrated micro LED transparent display chip. Background Art

[0002] Micro LED has the typical characteristics of chip miniaturization, so it has the potential to realize transparent display. Currently, Micro LED transparent display is mainly packaged through glass substrate. Since transparent Micro LED display requires glass substrate and power supply system, it cannot achieve self-power supply, which has limitations in transparent display application scenarios of some outdoor portable devices.

[0003] Therefore, a better optimized Micro LED transparent display structure needs to be considered. Utility Model Content

[0004] The first object of the utility model is to provide a self-powered integrated micro LED transparent display chip that can achieve self-powering and high transparency.

[0005] The second object of the utility model is to provide a display device which can realize self-power supply and high transparency.

[0006] In order to achieve the above-mentioned first purpose, the self-powered integrated microLED transparent display chip provided by the utility model includes a transparent substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a transparent electrode layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a first electrode and a second electrode; the first semiconductor layer is covered on the transparent substrate; the first semiconductor layer is provided with a first region and a second region on a first side surface away from the transparent substrate, the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer and the electron transport layer and the first electrode are stacked in sequence from the first region along a direction away from the first side surface, the second electrode covers the second region of the first semiconductor layer, and the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer and the electron transport layer and the first electrode on the first region are all isolated from the second electrode.

[0007] As can be seen from the above scheme, the self-powered integrated micro LED transparent display chip of the utility model is provided with a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a transparent electrode layer, a hole transport layer, a perovskite absorption layer, and an electron transport layer on a transparent substrate, and uses the perovskite absorption layer to form a solar power supply to provide power to the LED to achieve self-powering. At the same time, the transparent substrate, the first semiconductor layer, the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, and the electron transport layer are all transparent, thereby achieving a high transparency effect. Moreover, the use of a transparent electrode layer can protect the second semiconductor layer, and at the same time, it is conducive to expanding the light-emitting angle and improving the light-emitting efficiency.

[0008] In a further scheme, the hole transport layer is a P-type hole transport layer, the electron transport layer is an N-type electron transport layer, the first semiconductor layer is an N-type gallium nitride layer, the light-emitting layer is a MOW multi-quantum well layer, and the second semiconductor layer is a P-type gallium nitride layer; the MOW multi-quantum well layer, the P-type gallium nitride layer, the transparent electrode layer, the P-type hole transport layer, the perovskite absorption layer, the N-type electron transport layer and the first electrode are stacked in sequence from the first region in a direction away from the first side.

[0009] In a further embodiment, the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode are all isolated from the second electrode by an isolation layer.

[0010] It can be seen that the second electrode is isolated from the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode through the isolation layer, which can achieve electrical isolation and avoid short circuit.

[0011] In a further embodiment, the isolation layer is made of a non-conductive dielectric material.

[0012] In a further embodiment, the transparent electrode layer is an indium tin oxide layer.

[0013] It can be seen that the use of the indium tin oxide layer as a transparent electrode layer can achieve ohmic contact and light transmission with the semiconductor material, thereby improving the conductive effect.

[0014] In a further embodiment, the first electrode is made of a material selected from the group consisting of copper, silver, gold and nickel; and / or the second electrode is made of a material selected from the group consisting of copper, silver, gold and nickel.

[0015] It can be seen that the first electrode and the second electrode can be made of copper, silver, gold or nickel to improve the conductivity.

[0016] In a further embodiment, the transparent substrate includes one of a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate and a gallium oxide substrate.

[0017] It can be seen that sapphire substrates, silicon carbide substrates, gallium nitride substrates and gallium oxide substrates can be used as transparent substrates, which can facilitate the growth of GaN materials. At the same time, the transparent substrate can be retained to achieve transparency of the overall structure.

[0018] In order to achieve the above-mentioned second purpose, the utility model provides a display device, including a light-emitting unit array, which is provided with a plurality of self-powered integrated micro LED transparent display chips; the self-powered integrated micro LED transparent display chip includes a transparent substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a transparent electrode layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a first electrode and a second electrode; the first semiconductor layer is covered on the transparent substrate; the first semiconductor layer is provided with a first region and a second region on a first side of the first semiconductor layer away from the transparent substrate, the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer and the electron transport layer and the first electrode are stacked from the first region in a direction away from the first side, the second electrode covers the second region of the first semiconductor layer, and the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer and the electron transport layer on the first region and the first electrode are all isolated from the second electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic cross-sectional view of the structure of a self-powered integrated micro LED transparent display chip in an embodiment of the display device of the utility model.

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments. DETAILED DESCRIPTION

[0021] Display device embodiment:

[0022] In this embodiment, the display device includes a light-emitting unit array, and the light-emitting unit array is provided with a plurality of self-powered integrated micro LED transparent display chips.

[0023] like Figure 1As shown, the self-powered integrated micro LED transparent display chip includes a transparent substrate 1, a first semiconductor layer 2, a light-emitting layer 3, a second semiconductor layer 4, a transparent electrode layer 5, a hole transport layer 6, a perovskite absorption layer 7, an electron transport layer 8, a first electrode 9 and a second electrode 10. The first semiconductor layer 2 is covered on the transparent substrate 1, and the first semiconductor layer 2 is provided with a first region and a second region on the first side away from the transparent substrate 1. The light-emitting layer 3, the second semiconductor layer 4, the transparent electrode layer 5, the hole transport layer 6, the perovskite absorption layer 7 and the electron transport layer 8 and the first electrode 9 are stacked from the first region in a direction away from the first side. The second electrode 10 covers the second region of the first semiconductor layer 2, and the light-emitting layer 3, the second semiconductor layer 4, the transparent electrode layer 5, the hole transport layer 6, the perovskite absorption layer 7 and the electron transport layer 8 and the first electrode 9 on the first region are all isolated from the second electrode 10.

[0024] In this embodiment, the transparent substrate 1 includes one of a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate and a gallium oxide substrate. Using a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate and a gallium oxide substrate as the transparent substrate 1 can facilitate the growth of GaN materials, and at the same time, the transparent substrate 1 can be retained to achieve transparency of the overall structure.

[0025] The first semiconductor layer 2 is an N-type gallium nitride layer. The N-type gallium nitride layer is made of a known material, for example, epitaxially formed by doping silicon-doped gallium nitride material, thereby providing an N-type layer in the P-N junction of the LED.

[0026] The light emitting layer 3 is a MOW multi-quantum well layer, which adopts a well-known structure. For example, the MOW multi-quantum well layer adopts a quantum well-barrier structure with multiple repeating periods, thereby providing electron and hole recombination to realize the light emitting layer of the LED.

[0027] The second semiconductor layer 4 is a P-type gallium nitride layer. The P-type gallium nitride layer is made of a known material, for example, epitaxially formed by a magnesium-doped gallium nitride material, thereby providing a P-type layer in the P-N junction of the LED.

[0028] The transparent electrode layer 5 is an indium tin oxide layer. By using the indium tin oxide layer as the transparent electrode layer 5, ohmic contact and light transmission with the semiconductor material can be achieved, and the conductive effect can be improved. At the same time, the second semiconductor layer 4 can be protected, and it is beneficial to expand the light-emitting angle and improve the light extraction efficiency. In addition, the transparent electrode layer 5 serves as the anode of the perovskite solar cell and the anode of the LED light-emitting diode at the same time, thereby realizing the common anode connection of the perovskite solar cell and the LED light-emitting diode.

[0029] The hole transport layer 6 is a P-type hole transport layer, which is used to transport holes generated by the perovskite absorption layer 7 due to the photovoltaic effect to the transparent electrode layer 5 .

[0030] The perovskite absorption layer 7 absorbs sunlight through the photovoltaic effect and generates electron-hole pairs, thereby forming an electric potential difference to achieve photovoltaic power generation.

[0031] The electron transport layer 8 is an N-type electron transport layer, which is used to transport the electrons generated by the perovskite absorption layer 7 due to the photovoltaic effect to the first electrode.

[0032] The first electrode 9 is made of one of copper, silver, gold and nickel, and the second electrode 10 is made of one of copper, silver, gold and nickel. The first electrode 9 is connected to the second electrode 10 through a metal-semiconductor ohmic contact, and serves as the negative electrode of the perovskite solar cell. When the first electrode 9 is connected to the second electrode 10, a circuit closed-loop connection of the self-powered integrated micro LED transparent display chip can be realized, so that light can be emitted.

[0033] In this embodiment, the light-emitting layer 3, the second semiconductor layer 4, the transparent electrode layer 5, the hole transport layer 6, the perovskite absorption layer 7, the electron transport layer 8 and the first electrode 9 are all isolated from the second electrode 10 by the isolation layer 11. The isolation layer 11 is made of a non-conductive dielectric material. The non-conductive dielectric material can be made of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride and other materials. Preferably, the isolation layer 11 is made of silicon dioxide material.

[0034] Preferably, the thickness range of the N-type gallium nitride layer is 3um to 5um, the thickness range of the MOW multi-quantum well layer is 10nm to 500nm, the thickness range of the P-type gallium nitride layer is 50nm to 200nm, the thickness range of the transparent electrode layer 5 is 50nm to 200nm, the thickness range of the P-type hole transport layer is 50nm to 200nm, the thickness range of the perovskite absorption layer 7 is 50nm to 500nm, the thickness range of the N-type electron transport layer is 50nm to 200nm, the thickness range of the first electrode 9 is 50nm to 200nm, and the thickness range of the second electrode 10 is 50nm to 200nm.

[0035] When the self-powered integrated micro LED transparent display chip of this embodiment is manufactured, the LED epitaxial structure is first epitaxially grown on the transparent substrate 1 by the MOCVD method, that is, the first semiconductor layer 2, the light-emitting layer 3, and the second semiconductor layer 4 are grown. Then, the indium tin oxide layer is formed by coating the surface of the second semiconductor layer 4 by the PVD physical vapor deposition method. Then, a vacuum vapor evaporation method is used, and both an organic source and an inorganic source are provided to synthesize the perovskite component, thereby forming a perovskite solar cell, that is, a hole transport layer 6, a perovskite absorption layer 7, and an electron transport layer 8 are formed. Then, a semiconductor photolithography process is used, and ICP dry plasma coupled etching is used to etch from the electron transport layer 8 to the first semiconductor layer 2, exposing the second region of the first semiconductor layer 2. Then, an isolation layer 11 is formed on the surface of the second region of the first semiconductor layer 2 by PECVD plasma enhanced chemical vapor deposition. Next, the semiconductor photolithography process is used to etch away the redundant isolation layer 11 through ICP dry plasma coupled etching; then, an electrode layer is formed on the surface of the electron transport layer 8 and the surface of the first semiconductor layer 2 after the isolation layer 11 is removed through PVD method, such as Sputter magnetron sputtering, and finally, the redundant electrode layer is etched away through patterning to form the first electrode 9 and the second electrode 10. Thus, the production of the self-powered integrated micro LED transparent display chip is completed.

[0036] It should be noted that, although in this embodiment, the first semiconductor layer 2 is an N-type gallium nitride layer and the second semiconductor layer 4 is a P-type gallium nitride layer, the positions of the N-type gallium nitride layer and the P-type gallium nitride layer can also be interchanged, that is, when the first semiconductor layer 2 is a P-type gallium nitride layer, the second semiconductor layer 4 is an N-type gallium nitride layer. Correspondingly, the N-type electron transport layer and the P-type hole transport layer also need to change positions accordingly, that is, the hole transport layer 6 is an N-type electron transport layer, and the electron transport layer 8 is a P-type hole transport layer, so as to meet the requirements of the circuit loop.

[0037] It can be seen from the above scheme that the self-powered integrated micro LED transparent display chip of the utility model is provided with a first semiconductor layer 2, a light-emitting layer 3, a second semiconductor layer 4, a transparent electrode layer 5, a hole transport layer 6, a perovskite absorption layer 7, and an electron transport layer 8 on a transparent substrate 1, and the perovskite absorption layer 7 is used to form a solar power supply to provide power to the LED to achieve self-powering. At the same time, the transparent substrate 1, the first semiconductor layer 2, the light-emitting layer 3, the second semiconductor layer 4, the transparent electrode layer 5, the hole transport layer 6, the perovskite absorption layer 7, and the electron transport layer 8 are all transparent, thereby achieving a high transparency effect.

[0038] It should be noted that the above are only preferred embodiments of the present invention, but the design concept of the present invention is not limited thereto, and any non-substantial modifications made to the present invention using this concept also fall within the protection scope of the present invention.

Claims

1. A self-powered integrated micro LED transparent display chip, characterized in that: It includes a transparent substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a transparent electrode layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a first electrode and a second electrode; The first semiconductor layer covers the transparent substrate; The first semiconductor layer is provided with a first region and a second region on a first side away from the transparent substrate, the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode are stacked from the first region along a direction away from the first side, the second electrode covers the second region of the first semiconductor layer, and the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode on the first region are all isolated from the second electrode.

2. The self-powered integrated micro LED transparent display chip according to claim 1, characterized in that: The hole transport layer is a P-type hole transport layer, the electron transport layer is an N-type electron transport layer, the first semiconductor layer is an N-type gallium nitride layer, the light-emitting layer is a MOW multi-quantum well layer, and the second semiconductor layer is a P-type gallium nitride layer; The MOW multi-quantum well layer, the P-type gallium nitride layer, the transparent electrode layer, the P-type hole transport layer, the perovskite absorption layer, the N-type electron transport layer and the first electrode are stacked in sequence from the first region along a direction away from the first side surface.

3. The self-powered integrated micro LED transparent display chip according to claim 1, characterized in that: The light emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode are all isolated from the second electrode by an isolation layer.

4. The self-powered integrated micro LED transparent display chip according to claim 3, characterized in that: The isolation layer is made of non-conductive dielectric material.

5. The self-powered integrated micro LED transparent display chip according to any one of claims 1 to 4, characterized in that: The transparent electrode layer is an indium tin oxide layer.

6. The self-powered integrated micro LED transparent display chip according to any one of claims 1 to 4, characterized in that: The first electrode is made of a material selected from the group consisting of copper, silver, gold and nickel; and / or The second electrode is made of one of copper, silver, gold and nickel.

7. The self-powered integrated micro LED transparent display chip according to any one of claims 1 to 4, characterized in that: The transparent substrate includes one of a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate and a gallium oxide substrate.

8. A display device, comprising a light-emitting unit array, wherein the light-emitting unit array is provided with a plurality of self-powered integrated micro LED transparent display chips; characterized in that: The self-powered integrated micro LED transparent display chip includes a transparent substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a transparent electrode layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, a first electrode and a second electrode; The first semiconductor layer covers the transparent substrate; The first semiconductor layer is provided with a first region and a second region on a first side away from the transparent substrate, the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode are stacked from the first region along a direction away from the first side, the second electrode covers the second region of the first semiconductor layer, and the light-emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode on the first region are all isolated from the second electrode.

9. The display device according to claim 8, characterized in that: The light emitting layer, the second semiconductor layer, the transparent electrode layer, the hole transport layer, the perovskite absorption layer, the electron transport layer and the first electrode are all isolated from the second electrode by an isolation layer.

10. The display device according to claim 8 or 9, characterized in that: The transparent electrode layer is an indium tin oxide layer.

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