A reaction device and semiconductor heat treatment equipment

Abstract

The utility model relates to the technical field of semiconductor manufacturing equipment, and specifically provides a reaction device and semiconductor heat treatment equipment, which aims to solve the problem of uneven temperature field and gas flow field in the chamber structure of the existing vertical reactor. The reaction device of the utility model includes: a base and a first cover body and a second cover body arranged on the base; a first chamber for accommodating wafers to be processed is formed between the first cover body and the base; the second cover body is sleeved on the outside of the first cover body to form a second chamber between the first cover body, and the second chamber is connected to the first chamber; an air intake pipe is connected to the second chamber, and the process gas can enter the first chamber from the air intake pipe through the second chamber; and an exhaust pipe is connected to the first chamber to discharge the process gas in the first chamber. The reaction device can provide a larger mixing space for the process gas, reduce the influence of the process gas on the temperature uniformity, and thus improve the uniformity of the oxide film thickness.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing equipment, and specifically provides a reaction device and semiconductor heat treatment equipment. Background Art

[0002] With the rapid development of the integrated circuit manufacturing industry, new processes and materials continue to emerge, which also promotes the continuous updating of process equipment. Taking semiconductor heat treatment equipment such as vertical oxidation furnaces used for heat treatment such as oxidation, alloying, diffusion and annealing as an example, in order to ensure the realization of new processes and new materials, process indicators such as particle size control, film uniformity, metal content control, etc. are constantly improving with the update of process technology, and standard requirements are constantly improving.

[0003] In the related art, the vertical oxidation furnace usually adopts a chamber structure with single-side air intake to process wafers. Specifically, the chamber structure is located in the furnace cavity, and the chamber structure includes a reaction chamber and a guide pipe connected thereto, and the guide pipe is located on one side of the reaction chamber. The airflow first enters from the inlet end at the bottom of the guide pipe, and then enters the reaction chamber from the outlet end at the top of the guide pipe after passing through the guide pipe. This structure has two defects: First, since the gas in the reaction chamber usually needs to have a higher temperature, but the guide pipe is fed with room temperature gas, this will affect the uniformity of heat in the reaction chamber on this side of the guide channel, resulting in uneven temperature distribution on the wafer surface, which in turn affects the realization of the heat treatment process, such as affecting the uniformity of the film thickness on the entire surface of the wafer; second, when the mixed gas is introduced into the guide channel, due to the narrow space in the guide pipe, the airflow is difficult to fully mix, resulting in the uniformity of the airflow field being affected, and then affecting the uniformity of the film thickness.

[0004] In view of this, a new vertical oxidation furnace solution is needed in the art to solve the above problems. Utility Model Content

[0005] The utility model aims to solve the above technical problem, that is, to solve the problem of uneven temperature field and air flow field in the chamber structure of the existing vertical reaction furnace.

[0006] In a first aspect, the utility model provides a reaction device, comprising:

[0007] Base;

[0008] A first cover body is disposed on the base, and a first chamber for accommodating a wafer to be processed is formed between the first cover body and the base;

[0009] A second cover body, which is disposed on the base, the second cover body is sleeved on the outside of the first cover body, a second chamber is formed between the second cover body and the first cover body, and the second chamber is communicated with the first chamber;

[0010] an air inlet pipeline, which is in communication with the second chamber, and the process gas can enter the first chamber through the second chamber from the air inlet pipeline; and

[0011] An exhaust pipe is communicated with the first chamber to exhaust the process gas in the first chamber.

[0012] Optionally, the first cover body has a first end and a second end opposite to each other, the first end is provided with an air inlet hole, the air inlet hole connects the first chamber and the second chamber, and the air inlet duct is arranged close to the second end.

[0013] Optionally, there are multiple air inlet holes, and the multiple air inlet holes are arranged in an array at the first end.

[0014] Optionally, the exhaust duct is arranged close to the second end of the first cover body.

[0015] Optionally, the reaction device further comprises:

[0016] A reinforcing rib is connected between the first cover body and the second cover body.

[0017] Optionally, a plurality of the reinforcing ribs are provided, and the plurality of the reinforcing ribs are arranged at intervals along the circumferential direction of the outer surface of the first cover body.

[0018] Optionally, the exhaust duct passes through the first cover body and the second cover body in sequence.

[0019] Optionally, central axes of the air intake duct and the exhaust duct are located in the same radial cross section of the first cover body; and / or orthographic projections of the air intake duct and the exhaust duct in the radial cross section of the first cover body do not overlap.

[0020] In a second aspect, the utility model provides a semiconductor heat treatment device, comprising:

[0021] The reaction device as described in any one of the first aspects;

[0022] A furnace body, which is arranged outside the reaction device;

[0023] A carrying device is arranged in the first chamber and is used for carrying the wafer to be processed.

[0024] Optionally, the semiconductor thermal processing equipment further comprises:

[0025] The heat preservation device is located in the first chamber and is arranged close to the base.

[0026] The reaction device provided by the utility model comprises two nested chambers, thereby forming an annular chamber for the process gas to flow and mix between the two chambers. Compared with the single-sided air intake method of the guide pipe, it has at least the following advantages: first, the space of the annular chamber is larger. When the process gas includes multiple gases, they can be fully mixed in the annular chamber, so the process gas can enter the first chamber with a more uniform air flow field; second, the annular chamber surrounds the first chamber, which can effectively avoid the influence of the process gas at room temperature on the temperature uniformity of the process gas in the first chamber, which helps to maintain the uniformity of the temperature field in the first chamber, thereby helping to ensure the uniformity and consistency of the oxide film on the surface of the wafer.

[0027] The semiconductor heat treatment equipment provided by the utility model also has the above-mentioned advantages because it includes the above-mentioned reaction chamber. Compared with existing semiconductor heat treatment equipment such as a vertical oxidation furnace, it can optimize the in-plane temperature field and airflow field of the wafer, thereby facilitating the formation of a high-quality thin film on the wafer surface to meet the process requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings, in which:

[0029] Figure 1 It is a schematic diagram of the main structure of the reaction device provided by the embodiment of the utility model;

[0030] Figure 2 It is a schematic diagram of the top view of the reaction device provided in an embodiment of the utility model;

[0031] Figure 3 It is a structural schematic diagram of a semiconductor heat treatment device provided by an embodiment of the utility model.

[0032] List of reference numerals:

[0033] 11-first cover body, 111-first chamber, 112-exhaust duct, 113-first end, 114-second end, 115-air inlet hole, 12-second cover body, 121-second chamber, 122-air inlet duct, 13-base, 14-reinforcement rib, 2-furnace body, 3-carrying device, 4-heat preservation device. DETAILED DESCRIPTION

[0034] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not used to limit the protection scope of the present invention. Those skilled in the art can make adjustments to them as needed to adapt to specific application scenarios.

[0035] It should be noted that in the description of the present invention, the terms "upper", "lower", "left", "right", "inner", "outer" and the like indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, which are only for the convenience of description, and do not indicate or imply that the relevant device or structure must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, ordinal numbers such as "first" and "second" are only used for description and distinction, and cannot be understood as indicating or implying relative importance or quantity.

[0036] In addition, it should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] In the field of semiconductor integrated circuit manufacturing, the heat treatment process mainly includes oxidation, alloying, impurity diffusion and annealing for crystal defect repair. The heat treatment equipment involved includes oxidation furnaces, rapid thermal processing (RTP) equipment, etc. Among them, according to the different placement methods of the heating furnace body, furnace tubes and wafer boats carrying wafers, the oxidation furnace can be divided into horizontal oxidation furnaces and vertical oxidation furnaces. In comparison, the vertical oxidation furnace has the characteristics of good intra-wafer uniformity, high degree of automation and stable system performance, so it has been widely used.

[0038] Normal pressure vertical oxidation furnace is mainly used for thermal oxidation film formation of semiconductors. In the film formation process, as a reaction device, the uniformity of the temperature field and airflow field in the reaction chamber of the furnace tube will affect the uniformity of the oxide film thickness. One of the factors that affect the uniformity of the temperature field and airflow field is whether the mechanical structure design of the furnace tube is reasonable.

[0039] Existing vertical oxidation furnaces usually adopt a single-side air intake method. However, when air is taken in from one side through the guide pipe, on the one hand, the airflow will take away the heat on the air intake side of the chamber, causing uneven temperature inside the chamber; on the other hand, due to the limited space of the guide pipe, it is difficult for the process gas to be fully mixed, which will eventually affect the uniformity of the temperature field and the airflow field, and then affect the uniformity of the wafer film formation, which is mainly reflected in the poor thickness uniformity of the film.

[0040] Therefore, the utility model provides a reaction device, the mechanical structure of which is reasonably designed and can effectively improve the uniformity of the temperature field and the air flow field, thereby improving the uniformity of the oxide film on the surface of the wafer.

[0041] Specifically, if Figure 1 As shown, the reaction device includes a base 13 and a first cover body 11 and a second cover body 12 sealed and connected to the base 13. A first chamber 111 is formed in the first cover body 11. The first chamber 111 can also be understood as a process chamber, which can accommodate a wafer boat. The wafer boat is used to carry the wafer to be processed. The oxidation film forming process is mainly carried out in the first chamber 111. The second cover body 12 is sleeved outside the first cover body 11, and an annular second chamber 121 is formed between the two cover bodies. The second chamber 121 is connected to the first chamber 111 so that the process gas passes through the second chamber 121 and enters the first chamber 111.

[0042] Preferably, the first cover body 11 and the second cover body 12 adopt a cylindrical structure. The cylindrical structure can provide a relatively uniform channel in design, so that the process gas flows more smoothly in the first chamber 111 and the second chamber 121; more preferably, the central axes of the two covers coincide, that is, a circular chamber is formed between the two covers, which further makes the process gas flow more smoothly in the second chamber 121.

[0043] The air inlet pipe 122 is connected to the second chamber 121. The main function of the air inlet pipe 122 is to introduce process gas, such as process gas for thermal oxidation, into the reaction device. During the process of thermal oxidation, the process gas is continuously introduced into the second chamber 121 through the air inlet pipe 122. Therefore, relatively speaking, the pressure at the air inlet pipe 122 is higher, so that the process gas can enter the first chamber 111 through the second chamber 121.

[0044] Since the second chamber 121 surrounds the first chamber 111 in the form of an annular chamber structure, the annular chamber has a larger space compared to the single-sided air intake method of the guide pipe. When the process gas includes multiple gases, they can be fully mixed in the annular chamber, so the process gas can enter the first chamber 111 with a more uniform air flow field; the annular chamber surrounds the first chamber 111, which can avoid the influence of the normal temperature process gas on the uniformity of the gas temperature in the first chamber 111, which helps to maintain the uniformity of the temperature field in the first chamber 111, thereby helping to ensure the uniformity of the oxide film on the surface of the wafer and the quality of the oxide film.

[0045] In one embodiment, the base 13, the first cover 11 and the second cover 12 are all made of quartz material. The reaction device made of quartz can not only meet the high temperature requirements, but also significantly reduce impurity pollution, thereby improving product quality.

[0046] The exhaust pipe 112 is in communication with the first chamber 111, and is used to exhaust the process gas in the first chamber 111. This ensures the smoothness of the gas flow in the first chamber 111, thereby maintaining the normal progress of the reaction process.

[0047] Furthermore, the air intake duct 122 is disposed on the second cover body 12 and can be integrally formed with the second cover body 12. In this way, the sealing and stability of the connection between the air intake duct 122 and the second cover body 12 can be ensured.

[0048] Similarly, the exhaust duct 112 is disposed on the first cover body 11 and can also be integrally formed with the first cover body 11 .

[0049] In a preferred embodiment, the exhaust duct 112 passes through the first cover body 11 and the second cover body 12 in sequence, and an opening at one end of the exhaust duct 112 is disposed on the side wall of the first cover body 11 .

[0050] Specifically, if Figure 1 As shown, a through hole is provided on the second cover body 12, and the other end of the exhaust pipe 112 extends through the through hole to the outside of the second cover body 12. The exhaust pipe 112 and the second cover body 12 can be sealed by welding to prevent gas leakage.

[0051] In one embodiment, the first cover body 11 has a first end 113 and a second end 114 opposite to each other, the first end 113 being the top end of the first cover body 11 when in normal use, and the second end 114 being the bottom end of the first cover body 11 when in normal use. The first end 113 of the first cover body 11 is provided with an air inlet 115, and the air inlet 115 can connect the first chamber 111 and the second chamber 121, so that the process gas can enter the first chamber 111 from the second chamber 121 through the air inlet 115. Of course, the second chamber 121 can be connected to the first chamber 111 in various forms, such as through a pipe, a hole or other types of channel structures.

[0052] Further, the air inlet duct 122 is disposed close to the second end 114. That is, the air inlet hole 115 is disposed at the top end of the first cover body 11, and the air inlet duct 122 is close to the bottom end of the first cover body 11.

[0053] Figure 1 The direction indicated by the arrow is the flow direction of the process gas. Specifically, first, the process gas enters the second chamber 121 through the air inlet pipe 122 at the bottom, and then the process gas fully mixed in the second chamber 121 slowly flows from the top of the first cover 11 into the first chamber 111, and a thermal oxidation reaction is achieved in the chamber. Finally, after the thermal oxidation reaction, the process gas is discharged through the exhaust pipe 112, so that the wafer completes the oxidation film forming process in a stable airflow.

[0054] In the above process, since the second chamber 121 is an annular chamber, a larger flow space is provided for the process gas. When the process gas at room temperature enters the second chamber 121 at a higher temperature, the flow space helps to achieve uniform distribution of gas flow temperature and will not cause a large disturbance to the temperature in the first chamber 111. In particular, when the process gas is a mixed gas of multiple gases, the flow space also helps to achieve full mixing of the multiple gases, thereby promoting the uniformity of the process gas flow and ultimately improving the uniformity of the oxide film.

[0055] Furthermore, the annular chamber can also preheat the process gas before entering the first chamber 111, which helps to reduce the temperature gradient, thereby improving the uniformity of the temperature field in the first chamber 111 and achieving the purpose of improving the uniformity of the oxide film.

[0056] In addition, compared with the single-sided air intake method of the guide pipe, the air intake method through the annular chamber can slow down the speed of the process gas entering the first chamber 111, which is beneficial to the full mixing of multiple gases and the full progress of the thermal oxidation reaction.

[0057] In summary, by designing the gas flow channel into a double-layer cover surround type and adopting a structure in which the process gas flows in from the bottom and out from the top, the uniformity of the temperature field and air flow field of the process gas can be effectively improved, thereby improving the film formation quality and process stability.

[0058] In one embodiment, the exhaust pipe 112 is disposed near the second end 114 of the first housing 11, that is, the air inlet end is located at the top and the exhaust end is located at the bottom in the first chamber 111. Such a design helps to optimize processes such as thermal oxidation reactions.

[0059] Specifically, the air inlet is located at the top and the exhaust is set at the bottom, which can ensure that the process gas flows from the top to the bottom of the first chamber 111, so that the process gas in the process of high-temperature thermal oxidation can better cover the entire wafer surface and promote the full progress of the process such as oxidation reaction. At the same time, it also guarantees the residence time of the process gas in the first chamber 111 to a certain extent, so that the process gas can fully flow through the wafer and effectively discharge the waste gas and impurities generated by the thermal oxidation reaction. This design helps to improve the efficiency and stability of the thermal oxidation process and improve the quality of the oxide film.

[0060] In one embodiment, a plurality of air inlet holes 115 are provided, and the plurality of air inlet holes 115 are arranged in an array at the first end 113 of the first cover body 11. The array arrangement of the plurality of air inlet holes 115 helps to control the flow rate of the process gas and makes the process gas distribution more uniform during the oxidation process, thereby improving the oxidation uniformity of the wafer surface.

[0061] In a preferred embodiment, the plurality of air inlet holes 115 are evenly distributed on the top of the first cover body 11, for example, arranged in a shower shape. The shower-shaped arrangement allows the process gas to be evenly sprayed from the plurality of small holes, and the coverage area is wider, thereby ensuring that the entire wafer surface can be evenly oxidized, effectively improving the uniformity of the oxide film, and ensuring that an oxide layer with a relatively uniform thickness is formed on the wafer surface.

[0062] In one embodiment, if Figure 1 and 2 As shown, the orthographic projections of the air intake duct 122 and the exhaust duct 112 in the radial cross section of the first housing 11 do not overlap, or in other words, the air intake duct 122 and the exhaust duct 112 are arranged at a certain angle along the radial direction of the first housing 11. Figure 2 In the structure shown, the angle between the air inlet duct 122 and the air outlet duct 112 along the radial direction of the first housing 11 is approximately 90 degrees.

[0063] In one embodiment, the central axes of the air intake duct 122 and the exhaust duct 112 are located in the same radial cross section of the first housing 11, or in other words, the air intake duct 122 and the exhaust duct 112 are at the same height in the axial direction of the first housing 11. This design can simplify the structure of the reaction device, and at the same time, by keeping the air intake duct 122 and the exhaust duct 112 at the same height, it can effectively avoid interference in the layout of the reaction device in a space-constrained device such as a vertical reactor, thereby facilitating its installation.

[0064] In one embodiment, the reaction device further includes a reinforcing rib 14 connected between the first cover body 11 and the second cover body 12. The reinforcing rib 14 forms a supporting structure between the first cover body 11 and the second cover body 12, which can enhance the overall stability and structural strength of the reaction device.

[0065] As mentioned above, the first cover body 11 and the second cover body 12 are preferably made of quartz material. Although the quartz material can effectively resist the thermal expansion and thermal stress caused by the high-temperature thermal oxidation reaction, combined with the design of the reinforcing ribs 14, the connection between the first cover body 11 and the second cover body 12 can be more firm, and the overall structure can be more stable and reliable, so as to more effectively resist the influence of internal pressure changes and the external environment.

[0066] In a preferred embodiment, a plurality of reinforcing ribs 14 are provided, and the plurality of reinforcing ribs 14 are arranged at intervals along the circumferential direction of the outer surface of the first cover body 11. Figure 2In the structure shown, four reinforcing ribs 14 are spaced and evenly arranged along the circumferential direction of the outer surface of the first cover body 11. It can be understood that the more reinforcing ribs 14 there are, the more conducive it is to improving the reliability of the connection between the first cover body 11 and the second cover body 12, but it will also hinder the flow of process gas in the second chamber 121 to a certain extent. Therefore, in specific practice, the number and arrangement of the reinforcing ribs 14 are based on the principle of not affecting the flow of process gas in the second chamber 121 as much as possible and taking into account the stability of the structure.

[0067] In one implementation, the plurality of reinforcing ribs 14 are spaced and arranged spirally along the circumferential direction of the outer surface of the first cover body 11. Specifically, the orthographic projections of the plurality of reinforcing ribs 14 on the radial cross section of the first cover body 11 are spaced and evenly arranged, and in the axial direction of the first cover body 11, the plurality of reinforcing ribs 14 are also spaced and evenly arranged.

[0068] In another implementation, the plurality of reinforcing ribs 14 are arranged in multiple rows, and the rows of reinforcing ribs 14 are arranged at intervals along the axial direction of the first cover body 11 , and the axial height of each row of reinforcing ribs 14 in the first cover body 11 is the same, and adjacent rows of reinforcing ribs 14 are staggered.

[0069] The spacing design between the plurality of reinforcing ribs 14 can enhance the stability and strength of the entire reaction device. Meanwhile, this design also helps to reduce the load of the reinforcing ribs 14 themselves and prolong the service life of the reaction device.

[0070] The utility model also provides a semiconductor heat treatment device, such as Figure 3 As shown, it comprises a furnace body 2, in which a furnace cavity with an open end is formed, and the reaction device as described above is at least partially arranged in the furnace cavity.

[0071] A heating device, such as a furnace wire, is provided on the furnace body 2. As the name implies, the heating device is used to heat and provide heat so that the reaction device is in a temperature environment required by the process.

[0072] Furthermore, the semiconductor heat treatment equipment also includes a carrier 3 for carrying the wafer to be processed, which is arranged in the first chamber 111. The carrier 3 can provide stable support and protection for the wafer to be processed to ensure that the wafer to be processed is not damaged or shifted during the manufacturing process. The carrier 3 can specifically be a wafer boat commonly used in existing semiconductor heat treatment equipment, such as a quartz boat.

[0073] In one embodiment, the first chamber 111 further contains a heat preservation device 4, one end of which is connected to the carrying device 3, and the other end is connected to the base 13, and its functions are to support the carrying device 3 and to ensure that the carrying device 3 can be located in the middle area of ​​the first chamber 111, so as to ensure that the carrying device 3 can obtain a uniform and stable heating effect. In this embodiment, the heat preservation device 4 can be a heat preservation structure commonly used in current vertical oxidation furnaces.

[0074] Specifically, if Figure 3 As shown, since the air intake pipe 122 and the exhaust pipe 112 of the reaction device need to be connected to other components, part of the reaction device near the air intake pipe 122 and the exhaust pipe 112 is placed outside the furnace chamber. Therefore, the first chamber 111 loses more heat at this location, and the heat preservation device 4 can not only prevent the possibility of heat conduction to the lower environment (the area near the furnace mouth), thereby maintaining the stability and uniformity of the temperature of the reaction area near the carrier device 3, but also prevent the rapid loss of heat at the furnace mouth, reduce the temperature gradient, and thus improve the uniformity of the temperature in the area near the carrier device 3.

[0075] In general, the uniformity of the temperature field and the airflow field of the semiconductor heat treatment equipment using the reaction device provided by the embodiment of the utility model is improved, thereby improving the uniformity and quality of film formation of the semiconductor heat treatment equipment.

[0076] It should also be noted that the above embodiments all take the thermal oxidation process as an example to illustrate the characteristics and advantages of the above-mentioned reaction chamber and semiconductor heat treatment equipment, but it is not difficult for those skilled in the art to understand that the reaction chamber and semiconductor heat treatment equipment provided in this embodiment are used, because the uniformity of the temperature field and the air flow field is improved, it is also beneficial to improve the process stability of alloying, impurity diffusion and annealing.

[0077] So far, the technical solution of the present invention has been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

Claims

1. A reaction device, characterized in that: include: Base; A first cover body is disposed on the base, and a first chamber for accommodating a wafer to be processed is formed between the first cover body and the base; A second cover body, which is disposed on the base, and the second cover body is sleeved on the outside of the first cover body to form a second chamber between the second cover body and the first cover body, and the second chamber is communicated with the first chamber; an air inlet pipeline, which is in communication with the second chamber, and the process gas can enter the first chamber through the second chamber from the air inlet pipeline; and An exhaust pipe is communicated with the first chamber to exhaust the process gas in the first chamber.

2. The reaction device according to claim 1, characterized in that: The first cover body has a first end and a second end opposite to each other. The first end is provided with an air inlet hole, the air inlet hole communicates with the first chamber and the second chamber, and the air inlet duct is arranged close to the second end.

3. The reaction device according to claim 2, characterized in that: There are multiple air inlet holes, and the multiple air inlet holes are arranged in an array at the first end.

4. The reaction device according to claim 2, characterized in that: The exhaust duct is disposed close to the second end of the first cover body.

5. The reaction device according to claim 1, characterized in that: The reaction device also includes: A reinforcing rib is connected between the first cover body and the second cover body.

6. The reaction device according to claim 5, characterized in that: A plurality of reinforcing ribs are provided, and the plurality of reinforcing ribs are arranged at intervals along the circumferential direction of the outer surface of the first cover.

7. The reaction device according to claim 1 or 4, characterized in that: The exhaust duct passes through the first cover body and the second cover body in sequence.

8. The reaction device according to claim 1 or 4, characterized in that: Central axes of the air intake duct and the exhaust duct are located in the same radial cross section of the first cover body; and / or the orthographic projections of the air intake duct and the exhaust duct in the radial cross section of the first cover body do not overlap.

9. A semiconductor heat treatment device, characterized in that: include: The reaction device according to any one of claims 1 to 8; A furnace body, which is arranged outside the reaction device; A carrying device is arranged in the first chamber and is used for carrying the wafer to be processed.

10. The semiconductor heat treatment equipment according to claim 9, characterized in that: The semiconductor thermal processing equipment further comprises: The heat preservation device is located in the first chamber and is arranged close to the base.

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