RF amplifier circuits, RF devices and electronic devices

Abstract

The present application relates to the field of semiconductor technology, and specifically, to a radio frequency amplifier circuit, a radio frequency device, and an electronic device. The radio frequency amplifier circuit includes at least: a chip body and a packaging substrate; an amplifier circuit body, which is arranged on the chip body, and the amplifier circuit body includes at least a group of characteristic capacitor components; a characteristic inductor component, which is wound by the packaging traces on the surface of the packaging substrate, and the characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit, the first end of the characteristic resonant circuit is electrically connected to the chip body, and the second end of the characteristic resonant circuit is grounded, the resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency. Provided is a radio frequency amplifier circuit with a low-cost filter, easy to integrate, and small area.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular, to a radio frequency amplification circuit, a radio frequency device and an electronic device. Background Art

[0002] RF chips are a type of chip that processes RF signals. There are many types of chips and they are widely used in the field of communications. They can receive, amplify, and convert RF signals, and they are the link between digital analog circuits and antennas. RF chips are used in almost all situations where wireless communication is used. Many RF chips, such as LNA (low noise amplifier) ​​and transceiver, will encounter interference from other RF bands when working. Therefore, how to resist interference has become a problem faced by these RF chips.

[0003] For example, the GPS LNA (Global Positioning System low noise amplifier) ​​used in mobile phones will face signal interference from other frequency bands in the mobile phone (such as 2.4G WiFi signals and 900M GSM signals) outside its own working frequency band (such as GPS L1 band). In order to improve the anti-interference ability, the existing GPS LNA usually adds a SAW filter in front of the chip to filter out interference outside the working frequency band.

[0004] Figure 1 This is a common filtering solution for GPS LNA. The BPF added in front of the LNA usually uses a SAW filter. The SAW filter has a good filtering effect, but the cost is high and it must be integrated outside the chip, which increases the chip size and is inconvenient to integrate some chips.

[0005] Therefore, there is an urgent need for a low-cost filtering and easily integrated radio frequency amplifier circuit. Summary of the invention

[0006] In order to solve the above technical problems, a radio frequency amplifier circuit, a radio frequency device and an electronic device are provided in the embodiments of the present application.

[0007] A first aspect of an embodiment of the present application provides a radio frequency amplification circuit, comprising at least:

[0008] Chip body and packaging substrate;

[0009] The amplifier circuit body is arranged on the chip body, and the amplifier circuit body includes at least one set of characteristic capacitor components.

[0010] A characteristic inductor component is formed by winding the packaging traces on the surface of the packaging substrate. The characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit. The first end of the characteristic resonant circuit is electrically connected to the chip body, and the second end of the characteristic resonant circuit is grounded. The resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency.

[0011] In an optional embodiment of the present application, the amplifier circuit body at least includes:

[0012] An input matching inductor component, wherein a first end of the input matching inductor component is used to receive a signal to be amplified;

[0013] An input DC blocking capacitor component, wherein a first end of the input DC blocking capacitor component is electrically connected to a second end of the input matching inductor component;

[0014] an amplifying transistor, wherein a gate of the amplifying transistor is electrically connected to the second end of the input DC blocking capacitor component, and a source of the amplifying transistor is grounded;

[0015] An output matching capacitor component, wherein a first end of the output matching capacitor component is electrically connected to the drain of the amplifying transistor, and a second end of the output matching capacitor component is used to output a signal amplified from the signal to be amplified.

[0016] In an optional embodiment of the present application, the amplifier transistor includes at least two first amplifier transistors and a second amplifier transistor connected in series, wherein:

[0017] The gate of the first amplifying transistor is electrically connected to the second end of the input DC blocking capacitor component, the source of the first amplifying transistor is grounded; the drain of the second amplifying transistor is electrically connected to the first end of the output matching capacitor component.

[0018] In an optional embodiment of the present application, the amplifier circuit body further includes:

[0019] An input matching capacitor component, wherein a first end of the input matching capacitor component is electrically connected to the input DC blocking capacitor component;

[0020] A source degeneration inductor component, wherein a first end of the source degeneration inductor component is electrically connected to a second end of the input matching capacitor component and a source of the amplifying transistor respectively, and a second end of the source degeneration inductor component is grounded.

[0021] In an optional embodiment of the present application, the characteristic resonant circuit at least includes:

[0022] a first characteristic resonant circuit, wherein a first end of the first characteristic resonant circuit is electrically connected to a first end of the input matching inductor component, and a second end of the first characteristic resonant circuit is grounded; and / or,

[0023] A second characteristic resonant circuit, wherein a first end of the second characteristic resonant circuit is electrically connected to a second end of the output matching capacitor component, and a second end of the second characteristic resonant circuit is grounded.

[0024] In an optional embodiment of the present application, the first end of the characteristic inductance component is electrically connected to the chip body, the second end of the characteristic inductance component is electrically connected to the characteristic capacitance component, and the characteristic capacitance component is grounded.

[0025] In an optional embodiment of the present application, the specific interference frequency and the resonance frequency are both specific frequency points.

[0026] In an optional embodiment of the present application, the chip body at least includes a radio frequency amplifier, and correspondingly,

[0027] The characteristic resonant circuit at least includes a first characteristic resonant circuit and a second characteristic resonant circuit; wherein the resonant frequency of the first characteristic resonant circuit is the second harmonic, and the resonant frequency of the second characteristic resonant circuit is the third harmonic.

[0028] In an optional embodiment of the present application, the specific interference frequency is a plurality of frequency points, and correspondingly,

[0029] There are multiple characteristic resonant circuits, which are respectively connected to the local input terminal and / or transmitting terminal of the chip; the resonant frequency points of the multiple characteristic resonant circuits correspond one-to-one to each frequency point in the specific interference frequency.

[0030] A second aspect of an embodiment of the present application provides a radio frequency device, including:

[0031] A radio frequency amplifier circuit as described in any one of the above items.

[0032] In an optional embodiment of the present application, the radio frequency device is a low noise amplifier chip or a radio frequency transceiver chip.

[0033] According to a third aspect of the embodiments of the present application, an electronic device is provided, comprising at least:

[0034] A radio frequency device as described above.

[0035] The radio frequency amplifier circuit provided in the embodiment of the present application at least includes: a chip body and a packaging substrate; an amplifier circuit body, which is arranged on the chip body, and the amplifier circuit body includes at least one group of characteristic capacitor components; a characteristic inductor component, which is formed by winding the packaging traces on the surface of the packaging substrate, the characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit, the first end of the characteristic resonant circuit is electrically connected to the chip body, the second end of the characteristic resonant circuit is grounded, the resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency, any functional capacitor in the chip body is used as a characteristic capacitor component, and the packaging traces on the surface of the packaging substrate of the radio frequency device or the chip body are wound to form a characteristic inductor component, the characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit, the first end of the characteristic resonant circuit is electrically connected to the chip body, the second end of the characteristic resonant circuit is grounded, the resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and a resonance to the ground is formed through the characteristic resonant circuit to form a number of frequency suppression points to filter out the specific interference frequency.

[0036] First, the embodiment of the present application directly uses any functional capacitor in the chip body as a characteristic capacitor component, and winds the package traces on the surface of the package substrate of the RF device or the chip body to form a characteristic inductor component, without the need for additional capacitors and inductors, and without the need for expensive SAW filters, which is lower than the traditional filtering cost;

[0037] In the second aspect, the embodiment of the present application winds the package traces on the surface of the package substrate of the chip body to form a characteristic inductor component, that is, the characteristic inductor component is the package trace, which is not affected by the volume of the resonant capacitor and inductor and is easy to integrate;

[0038] On the third aspect, since the inductor occupies a larger area than the capacitor, placing it on the chip die will greatly increase the area of ​​the chip, increasing the area and preparation cost. The capacitor area is relatively small and is difficult to manufacture on the packaging substrate. Therefore, the embodiment of the present application sets the characteristic capacitor component on the chip die to simplify the preparation process of the characteristic resonant circuit; in addition, the embodiment of the present application winds the packaging traces on the surface of the packaging substrate of the chip body to form a characteristic inductor component, which can reduce the chip packaging area and the area of ​​the chip that constitutes the RF amplifier circuit.

[0039] In summary, the embodiments of the present application provide a radio frequency amplifier circuit with a low-cost filter, easy integration, and a small area. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0041] Figure 1 This is a common filter circuit diagram for GPS LNA;

[0042] Figure 2 A circuit diagram of a radio frequency amplifier circuit provided in an embodiment of the present application;

[0043] Figure 3 A schematic diagram of the packaging and wiring of a radio frequency device provided in an embodiment of the present application;

[0044] Figure 4 The S parameter (Scattering Parameter) simulation effect diagram of the radio frequency device provided in the embodiment of the present application;

[0045] Figure 5 A circuit diagram of a radio frequency device provided in an embodiment of the present application;

[0046] Figure 6 A circuit diagram of a radio frequency device provided in an embodiment of the present application;

[0047] Figure 7 A circuit diagram of a radio frequency device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0048] In the process of realizing the present application, the applicant discovered that there is an urgent need for a low-cost filtering and easily integrated radio frequency amplification circuit.

[0049] In view of the above problems, a radio frequency device and a radio frequency amplifier circuit are provided in the embodiments of the present application. In order to make the purpose, technical solution and advantages of the present application clearer, the following embodiments and the accompanying drawings further describe a radio frequency device and a radio frequency amplifier circuit of the present application in detail. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0050] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings). In the description of this application, it should be understood that the orientation or position relationship indicated by the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0051] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0052] See also Figure 2 An embodiment of the present application provides a radio frequency amplification circuit, comprising at least:

[0053] Chip body and packaging substrate;

[0054] The amplifier circuit body is arranged on the chip body, and the amplifier circuit body includes at least one set of characteristic capacitor components.

[0055] A characteristic inductor component is formed by winding the packaging traces on the surface of the packaging substrate. The characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit. The first end of the characteristic resonant circuit is electrically connected to the chip body, and the second end of the characteristic resonant circuit is grounded. The resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency.

[0056] The beneficial effects of the characteristic inductor component and the characteristic capacitor component, and the characteristic resonant circuit formed have been described in detail in the above embodiments, and will not be repeated here. The embodiment of the present application provides a radio frequency amplifier circuit with a low-cost filter, easy integration, and small area.

[0057] The radio frequency amplifier circuit provided in the embodiment of the present application at least includes: a chip body and a packaging substrate; an amplifier circuit body, which is arranged on the chip body, and the amplifier circuit body includes at least one group of characteristic capacitor components; a characteristic inductor component, which is formed by winding the packaging traces on the surface of the packaging substrate, the characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit, the first end of the characteristic resonant circuit is electrically connected to the chip body, the second end of the characteristic resonant circuit is grounded, the resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency, any functional capacitor in the chip body is used as a characteristic capacitor component, and the packaging traces on the surface of the packaging substrate of the radio frequency device or the chip body are wound to form a characteristic inductor component, the characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit, the first end of the characteristic resonant circuit is electrically connected to the chip body, the second end of the characteristic resonant circuit is grounded, the resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and a resonance to the ground is formed through the characteristic resonant circuit to form a number of frequency suppression points to filter out the specific interference frequency.

[0058] First, the embodiment of the present application directly uses any functional capacitor in the chip body as a characteristic capacitor component, and winds the package traces on the surface of the package substrate of the RF device or the chip body to form a characteristic inductor component, without the need for additional capacitors and inductors, and without the need for expensive SAW filters, which is lower than the traditional filtering cost;

[0059] In the second aspect, the embodiment of the present application winds the package traces on the surface of the package substrate of the chip body to form a characteristic inductor component, that is, the characteristic inductor component is the package trace, which is not affected by the volume of the resonant capacitor and inductor and is easy to integrate;

[0060] On the third aspect, since the inductor occupies a larger area than the capacitor, placing it on the chip die will greatly increase the area of ​​the chip, increasing the area and preparation cost. The capacitor area is relatively small and is difficult to manufacture on the packaging substrate. Therefore, the embodiment of the present application sets the characteristic capacitor component on the chip die to simplify the preparation process of the characteristic resonant circuit; in addition, the embodiment of the present application winds the packaging traces on the surface of the packaging substrate of the chip body to form a characteristic inductor component, which can reduce the chip packaging area and the area of ​​the chip that constitutes the RF amplifier circuit.

[0061] In summary, the embodiments of the present application provide a radio frequency amplifier circuit with a low-cost filter, easy integration, and a small area.

[0062] Please continue to see Figure 2 , is a schematic diagram of an exemplary LNA amplifier circuit ( Figure 2The chip only includes the RF core circuit part, and does not include auxiliary circuits such as biasing). The part circled by the dotted line is the device on the chip body, including: the first amplifier transistor FET1, the second amplifier transistor FET2, the source degeneration inductor component L2, the load inductor L4, the input DC blocking capacitor component C1, the input matching capacitor component C5, the output matching capacitor component C3, the input filter capacitor component C2, and the output filter capacitor component C4;

[0063] Outside the dotted box are characteristic inductor components wound on the package substrate, including: input matching inductor component L1, filter inductor components L3 and L5.

[0064] See also Figure 2 In an optional embodiment of the present application, the amplifier circuit body at least includes: an input matching inductor component L1, an input DC blocking capacitor component C1, an amplifier transistor and an output matching capacitor component C3;

[0065] The first end of the input matching inductor component L1 is used to receive the signal to be amplified and match the impedance;

[0066] The first end of the input DC isolation capacitor component C1 is electrically connected to the second end of the input matching inductor component L1 to isolate the DC current;

[0067] an amplifying transistor, wherein the gate of the amplifying transistor is electrically connected to the second end of the input DC blocking capacitor component C1, the drain of the amplifying transistor is electrically connected to the first end of the output matching capacitor component C3, and the source of the amplifying transistor is grounded;

[0068] The first end of the output matching capacitor component C3 is electrically connected to the drain of the amplifying transistor, and the second end of the output matching capacitor component C3 is used to output a signal amplified from the signal to be amplified.

[0069] In an optional embodiment of the present application, the amplifier transistor includes at least two first amplifier transistors FET1 and second amplifier transistors FET2 connected in series, and the amplifier circuit body includes at least: an input matching inductor component L1, an input DC blocking capacitor component C1, a first amplifier transistor FET1, a second amplifier transistor FET2 and an output matching capacitor component C3; and may also include: an input matching capacitor component C5 and a source degeneration inductor component L2, wherein:

[0070] The first end of the input matching inductor component L1 is used to receive the signal to be amplified and match the impedance;

[0071] The first end of the input DC isolation capacitor component C1 is electrically connected to the second end of the input matching inductor component L1 to isolate the DC current;

[0072] At least two first amplifying transistors FET1 and second amplifying transistors FET2 connected in series amplify the input signal, the gate of the first amplifying transistor FET1 is electrically connected to the second end of the input DC blocking capacitor component C1, and the source of the first amplifying transistor FET1 is grounded; the drain of the second amplifying transistor FET2 is electrically connected to the first end of the output matching capacitor component C3, the second end of the input DC blocking capacitor component C1 is electrically connected to the gate of the first amplifying transistor FET1, and the source of the first amplifying transistor FET1 is grounded;

[0073] The first end of the output matching capacitor component C3 is electrically connected to the drain of the second amplifying transistor FET2, and the second end of the output matching capacitor component C3 is used to output a signal amplified from the signal to be amplified.

[0074] The first end of the input matching capacitor component C5 is electrically connected to the input DC blocking capacitor component C1, and C5 is used for input matching;

[0075] A first end of the source degeneration inductor component L2 is electrically connected to a second end of the input matching capacitor component C5 and a source of the first amplifying transistor FET1, respectively, and a second end of the source degeneration inductor component L2 is grounded.

[0076] In an optional embodiment of the present application, the characteristic resonance circuit at least includes: a first characteristic resonance circuit and a second characteristic resonance circuit, wherein:

[0077] The first end of the first characteristic resonant circuit is electrically connected to the first end of the input matching inductor component L1, and the second end of the first characteristic resonant circuit is grounded; and / or,

[0078] A first end of the second characteristic resonant circuit is electrically connected to a second end of the output matching capacitor component C3, and a second end of the second characteristic resonant circuit is grounded.

[0079] Among them, the filter inductor component L3 and the input filter capacitor component C2 constitute a first characteristic resonant circuit. When the resonant frequency of the first characteristic resonant circuit is equal to the interference frequency, the interference signal will be released to the ground through the resonant path formed by the filter inductor component L3 and the input filter capacitor component C2, thereby suppressing the interference.

[0080] Similarly, the filter inductor component L5 and the output filter capacitor component C4 will also form a second characteristic resonant circuit. When the resonant frequency of the second characteristic resonant circuit is equal to the interference frequency, the interference signal will be released to the ground through the second resonant path formed by the filter inductor component L5 and the output filter capacitor component C4, thereby suppressing the interference.

[0081] See also Figure 3, the chip body includes at least one set of characteristic capacitor components; wherein the characteristic capacitor components are filter capacitors in the chip body;

[0082] The chip body refers to the bare die of the chip, on which various functional devices inside the chip are formed, such as matching circuits, transceiver circuits, etc. The functional capacitor refers to a capacitor on the bare die of the chip that has certain electrical properties and functions. It is an indispensable functional device for the normal operation of the chip and is a device that the chip itself has or is necessary. The filter capacitor can be an additional capacitor added to the chip body, or it can be a functional body capacitor that the chip body itself has and can be used. The embodiments of this application do not make any restrictions.

[0083] The characteristic inductor component is wound by the packaging trace on the surface of the packaging substrate. The characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit. The first end of the characteristic resonant circuit is electrically connected to the chip body, and the second end of the characteristic resonant circuit is grounded. The resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency.

[0084] The characteristic inductance component is wound by the packaging trace on the surface of the packaging substrate. The packaging trace refers to the interconnection wire introduced when the chip body or the chip die is packaged, and can be on the outer surface or inner surface of the chip substrate. The number of turns, cross-sectional area, material, etc. of the characteristic inductance component are not limited in the embodiments of the present application, and can be flexibly adjusted according to actual conditions. It should be explained that the characteristic inductance component and the characteristic capacitance component are electrically connected to form a characteristic resonant circuit, and the resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency. The specific interference frequency can be a specific frequency point, or it can be multiple frequency points or a narrower frequency band, which can be flexibly adjusted according to actual conditions.

[0085] The specific interference frequency may be, for example, a GSM interference signal near 900 MHz in a GPS LNA mobile phone application, a WiFi interference signal near 2.4 GHz, etc., which are not exhaustively listed here.

[0086] The resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency. The inductance value of the characteristic inductance component and the capacitance value of the characteristic capacitance component in the specific characteristic resonant circuit can be determined according to the following resonance formula (1):

[0087]

[0088] In formula (1), fn represents the resonant frequency or specific interference frequency (the two are the same) of the nth characteristic resonant circuit, Cn represents the capacitance value of the nth characteristic capacitance component, and Ln represents the inductance value of the nth characteristic inductance component.

[0089] In the embodiment of the present application, the filter capacitor in the chip body is used as a characteristic capacitor component, and the packaging traces on the surface of the packaging substrate of the chip body are wound to form a characteristic inductor component. The characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit. The first end of the characteristic resonant circuit is electrically connected to the chip body, and the second end of the characteristic resonant circuit is grounded. The resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency. A resonance to the ground is formed through the characteristic resonant circuit, and a number of frequency suppression points are formed to filter out the specific interference frequency.

[0090] First, the embodiment of the present application directly uses any functional capacitor in the chip body as a characteristic capacitor component, and winds the package traces on the surface of the package substrate of the chip body to form a characteristic inductor component, without the need to add additional capacitors and / or inductors, and without the need for expensive SAW filters, which is lower than the traditional filtering cost;

[0091] In the second aspect, the embodiment of the present application winds the package traces on the surface of the package substrate of the chip body to form a characteristic inductor component, that is, the characteristic inductor component is the package trace, which is not affected by the volume of the resonant capacitor and inductor and is easy to integrate;

[0092] On the third aspect, since the inductor occupies a larger area than the capacitor, placing it on the chip die will greatly increase the area of ​​the chip, increasing the area and preparation cost. The capacitor area is relatively small and is difficult to manufacture on the packaging substrate. Therefore, the embodiment of the present application sets the characteristic capacitor component on the chip die to simplify the preparation process of the characteristic resonant circuit; in addition, the embodiment of the present application winds the packaging traces on the surface of the packaging substrate of the chip body to form a characteristic inductor component, which can reduce the chip packaging area and the area of ​​the RF device.

[0093] In summary, the embodiments of the present application provide a radio frequency amplifier circuit with a low-cost filter, easy integration, and a small area.

[0094] See also Figure 3 , Figure 3The schematic diagram of the packaging and wiring of the radio frequency device including the radio frequency amplifier circuit provided in the embodiment of the present application, wherein the bare die of the chip body (i.e., the chip bare die) is placed in the center of the substrate, and the thick black lines represent the bonding wires punched on the chip body, which are used to fix the various functional modules in the chip body, such as: the ground terminal GND, the control terminal (enable terminal) EN, the power terminal VDD, the radio frequency input terminal RFIN, the radio frequency output terminal RFOUT, etc., which are not exhaustive here. The characteristic inductor component is formed on the packaging substrate by routing and winding, and then connected to the characteristic capacitor component on the chip body by wire bonding, so as to realize the integrated filtering function in a small packaging space, with higher integration and lower cost.

[0095] See also Figure 4 , Figure 4 Taking GPS LNA as an example, the RF device including the RF amplifier circuit provides the S parameter (Scattering Parameter) simulation effect diagram of GPS LNA.

[0096] Figure 4 In the figure, curve S21 (corresponding to the curve with S peak value of 21.7149dB) represents the power gain from input to output, curve S11 (corresponding to the curve with S peak value of -12.809dB) and curve S22 (corresponding to the curve with S peak value of -3.63933) respectively represent the input and output matching, and curve S12 (corresponding to the curve with S peak value of -41.8951dB) represents the reverse isolation of GPS LNA. After adopting the characteristic resonant circuit formed by electrically connecting the characteristic inductor component and the characteristic capacitor component provided in the embodiment of the present application, the gain curve S21 (corresponding to the curve with S peak value of 21.7149dB) will form two depressions near 900MHz and 2.4GHz. The relative gain at 900MHz can form a suppression effect of more than 40dB, and the suppression effect at 2.4GHz can form a suppression effect of more than 30dB. The suppression effect of specific interference frequency is obvious, which is basically the same as the interference filtering effect of traditional filters.

[0097] In an optional embodiment of the present application, Figure 5 As shown in the dotted boxes on the left and right, the first end of the characteristic inductance component is electrically connected to the chip body, for example, connected to the matching circuit in the chip body, and the second end of the characteristic inductance component is electrically connected to the characteristic capacitance component, and the characteristic capacitance component is grounded. The characteristic capacitance component is in the chip body, and the characteristic inductance component and the characteristic capacitance component can be multiple, respectively connected to form multiple groups of characteristic resonant circuits, respectively forming different suppression points to filter different specific interference frequencies. For example Figure 5Among them, C1, C2...Cn are characteristic capacitor components placed on the chip body, L1, L2...Ln are characteristic inductor components wound out of the chip body through the substrate wiring, one end of the characteristic capacitor component is connected to the ground, and the other end is connected to the external characteristic inductor component through the pad. It needs to be explained that Figure 5 It does not constitute a limitation on the number of the characteristic inductor components, characteristic capacitor components and the characteristic resonant circuits formed in the embodiments of the present application. The number can be one group or multiple groups, which can be flexibly adjusted according to actual conditions. It is mainly limited by the number of functional capacitors available in the chip body. The number of characteristic inductor components is limited by the basic winding amount of the package.

[0098] In an optional embodiment of the present application, except Figure 5 In addition to the characteristic resonant circuit connection method provided in Figure 6 The right dotted box in the figure provides another connection mode of the characteristic resonance circuit at the output end of the chip body. The first end of the characteristic capacitance components Co1, Co2...Con in the characteristic resonance circuit is electrically connected to the chip body, the first end of the characteristic inductance components Lo1, Lo2...Lon is electrically connected to the second end of the characteristic capacitance, and the second end of the characteristic inductance components is grounded. Of course, Figure 5 and Figure 6 All the connection methods of the characteristic resonant circuits are examples of the embodiments of the present application and do not constitute specific limitations on the connection methods of the characteristic resonant circuits. The characteristic resonant circuit only needs one end to be connected to the chip body and the other end to be grounded to achieve the purpose of current discharge.

[0099] In an optional embodiment of the present application, the specific interference frequency and the resonant frequency are both specific frequency points. That is, a set of characteristic resonant circuits corresponds to a specific frequency point, which is different from the frequency band, and only filters specific interference wave points, which is more targeted, simplifies the filtering structure to a certain extent, and saves costs while ensuring the filtering effect.

[0100] In an optional embodiment of the present application, the chip body at least includes a radio frequency amplifier, and correspondingly, the characteristic resonance circuit is connected to the transmitting end of the radio frequency amplifier. The characteristic resonance circuit includes a first characteristic resonance circuit and a second characteristic resonance circuit, wherein the resonance frequency of the first characteristic resonance circuit is the second harmonic, and the resonance frequency of the second characteristic resonance circuit is the third harmonic.

[0101] See also Figure 7 The chip body is a radio frequency amplifier, which needs to suppress the second and third harmonics of the power amplifier to reduce interference to other circuits. Figure 7Among them, Co1 and Co2 are characteristic capacitor components located on the RF amplifier chip body, Lo1 and Lo2 are characteristic inductor components wound on the package substrate, the first end of the characteristic inductor component is connected to the transmitting end of the RF amplifier, the second end of the characteristic inductor component is connected to the characteristic capacitor components Co1 and Co2 respectively, the first ends of the characteristic capacitor components Co1 and Co2 are electrically connected to the characteristic inductor components Lo1 and Lo2 respectively, and the second ends of the characteristic capacitor components Co1 and Co2 are grounded. When the operating frequency of the RF amplifier is 900MHz, the first characteristic capacitor component Co1 and the first characteristic inductor component Lo1 resonate at 1800MHz, and the second characteristic capacitor component Co2 and the second characteristic inductor component Lo2 resonate at 2700MHz, which can attenuate the second harmonic and third harmonic of the RF amplifier, play a filtering effect, and reduce the interference caused by the second harmonic and third harmonic to other circuits.

[0102] In an optional embodiment of the present application, the specific interference frequency is a plurality of frequency points, and correspondingly, the number of the characteristic resonant circuits is a plurality, and the resonant frequency points of the plurality of characteristic resonant circuits correspond one-to-one to each frequency point in the specific interference frequency, and are respectively connected to the local input terminal and / or transmitting terminal of the chip. Figure 5 It includes two sets of characteristic resonant circuits, which are respectively connected to the input and output ends of the chip body, forming different suppression points to filter different specific interference frequencies at the input and output ends, thereby improving the filtering performance and filtering effect.

[0103] In an optional embodiment of the present application, the chip body includes multiple radio frequency modes, and the chip body also includes a radio frequency mode coordinated control circuit to achieve the coordinated operation of the multiple radio frequency modes of the chip body, and the radio frequency mode coordinated control circuit includes: a first mode control circuit, a second mode control circuit and a radio frequency control module, wherein:

[0104] The first mode control circuit is used to generate and output a register control signal according to the received first RF control signal; the second mode control circuit at least includes: a register control module, which is used to select a third RF control signal corresponding to the received second RF control signal from a preconfigured mapping relationship under the control of the register control signal; and a RF control module, which is connected to the second mode control circuit signal and is used to control the switching of the RF path based on the third RF control signal.

[0105] The first mode control circuit at least includes: a first driving circuit and a first mode control device, the input end of the first driving circuit is used to receive the first RF control signal; a first mode control device, the input end of the first mode control device is connected to the output end signal of the first driving circuit, the output end of the first mode control device is connected to the control end signal of the register control module, and the first mode control device is used to output the register control signal based on the first RF control signal.

[0106] The second mode control circuit at least comprises:

[0107] a second driving circuit, wherein an input end of the second driving circuit is used to receive the second radio frequency control signal;

[0108] A register unit, connected to the output terminal signal of the analysis circuit;

[0109] A selector unit, wherein the input end of the selector unit is signal-connected to the output end of the register unit, the control end of the selector unit is signal-connected to the first mode control circuit, and the output end of the selector unit is signal-connected to the control end of the RF control module; the selector unit is used to read and write the target data in the register unit according to the address information to obtain the third RF control signal corresponding to the second RF control signal; wherein the address information refers to the address information of the third RF control signal corresponding to the second RF control signal.

[0110] A parsing circuit, wherein the input end of the parsing circuit is signal-connected to the output end of the second driving circuit, the output end of the parsing circuit is signal-connected to the input end of the register control module, and the parsing circuit is used to parse the second RF control signal to obtain the target data in the second RF control signal and the address information corresponding to the target data. The register unit includes at least 6 bits of storage containers.

[0111] The first driving circuit in the first mode control circuit includes at least two inverters electrically connected to each other; and / or, the second driving circuit in the second mode control circuit includes at least two inverters electrically connected to each other. The first RF control signal is a voltage control signal, and the second RF control signal is an SCLK signal and an SDATA signal. The first mode control circuit is a GPIO mode control circuit; and / or, the second mode control circuit is a MIPI mode control circuit.

[0112] The RF mode coordinated control circuit is integrated in the connector, and the integrator at least includes: a first RF control signal port and a second RF control signal port which are independent of each other and integrated in the same substrate.

[0113] An embodiment of the present application provides a radio frequency device, including: a radio frequency amplification circuit as described in any one of the above items.

[0114] The beneficial effects of the radio frequency amplification circuit have been described in detail in the above embodiments and will not be repeated here.

[0115] Based on the above description, the embodiment of the present application can provide a radio frequency device with lower cost, higher integration and smaller chip area.

[0116] In an optional embodiment of the present application, the radio frequency device is a low noise amplifier chip or a radio frequency transceiver chip.

[0117] LNA (low noise amplifier) ​​will face signal interference from other frequency bands in the mobile phone (such as 2.4G WiFi signal and 900M GSM signal) in addition to its own working frequency band (such as GPS L1 band). The specific interference frequency (2.4G and 900M) is fixed, so the characteristic resonant circuit formed by the characteristic capacitor component and the characteristic inductor component provided in the embodiment of the present application can be used to filter out the specific interference frequency, which has lower cost, higher integration and smaller chip area;

[0118] Similarly, the embodiments of the present application can provide a radio frequency transceiver chip with lower cost, higher integration and smaller chip area.

[0119] An embodiment of the present application provides an electronic device, comprising at least: the radio frequency device as described above.

[0120] The beneficial effects of the radio frequency device have been described in detail in the above embodiments and will not be repeated here.

[0121] Based on the above description, the embodiments of the present application can provide an electronic device with lower cost, higher integration and smaller chip area.

[0122] It should be understood that, although the various steps in the flow chart are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the figure may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these sub-steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0123] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0124] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A radio frequency amplifier circuit, characterized in that: At least: Chip body and packaging substrate; An amplifier circuit body, disposed on the chip body, wherein the amplifier circuit body includes at least one set of characteristic capacitor components; A characteristic inductor component is formed by winding the packaging traces on the surface of the packaging substrate. The characteristic inductor component and the characteristic capacitor component are electrically connected to form a characteristic resonant circuit. The first end of the characteristic resonant circuit is electrically connected to the chip body, and the second end of the characteristic resonant circuit is grounded. The resonant frequency of the characteristic resonant circuit is the same as the specific interference frequency, and the characteristic resonant circuit is used to filter the specific interference frequency.

2. The radio frequency amplifier circuit according to claim 1, characterized in that: The amplifier circuit body at least comprises: An input matching inductor component, wherein a first end of the input matching inductor component is used to receive a signal to be amplified; An input DC blocking capacitor component, wherein a first end of the input DC blocking capacitor component is electrically connected to a second end of the input matching inductor component; an amplifying transistor, wherein a gate of the amplifying transistor is electrically connected to the second end of the input DC blocking capacitor component, and a source of the amplifying transistor is grounded; An output matching capacitor component, wherein a first end of the output matching capacitor component is electrically connected to the drain of the amplifying transistor, and a second end of the output matching capacitor component is used to output a signal amplified from the signal to be amplified.

3. The radio frequency amplifier circuit according to claim 2, characterized in that: The amplifying transistor comprises at least two first amplifying transistors and a second amplifying transistor connected in series, wherein: The gate of the first amplifying transistor is electrically connected to the second end of the input DC blocking capacitor component, the source of the first amplifying transistor is grounded; the drain of the second amplifying transistor is electrically connected to the first end of the output matching capacitor component.

4. The radio frequency amplifier circuit according to claim 2, characterized in that: The amplifier circuit body also includes: An input matching capacitor component, wherein a first end of the input matching capacitor component is electrically connected to the input DC blocking capacitor component; A source degeneration inductor component, wherein a first end of the source degeneration inductor component is electrically connected to a second end of the input matching capacitor component and a source of the amplifying transistor respectively, and a second end of the source degeneration inductor component is grounded.

5. The radio frequency amplifier circuit according to claim 2, characterized in that: The characteristic resonant circuit comprises at least: a first characteristic resonant circuit, wherein a first end of the first characteristic resonant circuit is electrically connected to a first end of the input matching inductor component, and a second end of the first characteristic resonant circuit is grounded; and / or, A second characteristic resonant circuit, wherein a first end of the second characteristic resonant circuit is electrically connected to a second end of the output matching capacitor component, and a second end of the second characteristic resonant circuit is grounded.

6. The radio frequency amplifier circuit according to claim 1, characterized in that: The first end of the characteristic inductor component is electrically connected to the chip body, the second end of the characteristic inductor component is electrically connected to the characteristic capacitor component, and the characteristic capacitor component is grounded.

7. The radio frequency amplifier circuit according to claim 1, characterized in that: The specific interference frequency and the resonance frequency are both specific frequency points.

8. The radio frequency amplifier circuit according to claim 5, characterized in that: The chip body at least includes a radio frequency amplifier, and correspondingly, The characteristic resonant circuit at least includes a first characteristic resonant circuit and a second characteristic resonant circuit; wherein the resonant frequency of the first characteristic resonant circuit is the second harmonic, and the resonant frequency of the second characteristic resonant circuit is the third harmonic.

9. The radio frequency amplifier circuit according to claim 1, characterized in that: The specific interference frequency is a plurality of frequency points, correspondingly, There are multiple characteristic resonant circuits, which are respectively connected to the local input terminal and / or transmitting terminal of the chip; the resonant frequency points of the multiple characteristic resonant circuits correspond one-to-one to each frequency point in the specific interference frequency.

10. A radio frequency device, characterized in that: include: A radio frequency amplifier circuit as claimed in any one of claims 1 to 9.

11. The radio frequency device according to claim 10, characterized in that: The radio frequency device is a low noise amplifier chip or a radio frequency transceiver chip.

12. An electronic device, characterized in that: At least: The radio frequency device as claimed in claim 11.

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