T-type three-level module and energy storage converter

Abstract

The utility model discloses a T-type three-level module and an energy storage converter, and relates to the technical field of IGBTs. According to the utility model, the three first IGBT modules are arranged in parallel in the second direction, the three second IGBT modules are arranged in parallel in the second direction, and the capacitor bank, the three first IGBT modules and the three second IGBT modules are integrally symmetrical up and down; the current path distances from the positive row to the three first IGBT modules are basically the same, the current path distances from the negative row to the three first IGBT modules are basically the same, the current path distances from the three first IGBT modules to the output row are basically the same, the current path distances from the N row to the three second IGBT modules are basically the same, and the current path distances from the three second IGBT modules to the output row are basically the same. Therefore, the impedance of each current loop is basically the same, and the current of each loop of the T-type three-level module is more uniform.

Description

Technical Field

[0001] The utility model relates to the technical field of IGBT, in particular to a T-type three-level module and an energy storage converter. Background Art

[0002] The T-type three-level module can generate three different levels and is widely used in energy storage converters. At present, the layout of the IGBT modules in the T-type three-level module is unreasonable, and the path distances from the positive row of capacitors and the negative row of capacitors to each IGBT module are different, resulting in different impedances of each current loop, leading to uneven current flow in each loop. Utility Model Content

[0003] The utility model solves the technical problem of how to make the T-type three-level module more current-balanced by providing a T-type three-level module and an energy storage converter.

[0004] On the one hand, the utility model provides the following technical solutions:

[0005] A T-type three-level module comprises a capacitor bank, three first IGBT modules and three second IGBT modules;

[0006] The negative middle capacitor in the capacitor group, the positive middle capacitor in the capacitor group, the three first IGBT modules, and the three second IGBT modules are arranged in sequence in the first direction;

[0007] The three first IGBT modules are arranged in parallel in a second direction, and the three second IGBT modules are arranged in parallel in the second direction, and the second direction is perpendicular to the first direction;

[0008] The capacitor group, the three first IGBT modules, and the three second IGBT modules as a whole have a symmetry axis in the first direction;

[0009] The positive terminal and the negative terminal of the first IGBT module are both located at one end of the first IGBT module close to the capacitor group, the output terminal of the first IGBT module is located at one end of the first IGBT module close to the second IGBT module, the output terminal of the second IGBT module is located at one end of the second IGBT module close to the first IGBT module, and the N terminal of the second IGBT module is located at one end of the second IGBT module away from the first IGBT module;

[0010] The positive row of the positive middle capacitor is connected to the positive terminals of the three first IGBT modules, the negative row of the negative middle capacitor is connected to the negative terminals of the three first IGBT modules, the output terminals of the three first IGBT modules are connected to the output terminals of the three second IGBT modules through the output row, and the N row of the capacitor group is connected to the N terminal of the second IGBT module.

[0011] Optionally, the first IGBT module is an Infineon ME4 module.

[0012] Optionally, the second IGBT module is an Infineon common emitter module.

[0013] Optionally, a vertical groove is respectively formed at a position of the output row close to the middle first IGBT module among the three first IGBT modules and a position of the output row close to the middle second IGBT module among the three second IGBT modules, and a current equalizing row is connected between the two vertical grooves.

[0014] Optionally, the positive row, negative row, and N row of the capacitor group are arranged in sequence from inside to outside.

[0015] Optionally, the first IGBT module includes switch tubes T1 and T2, one end of the switch tube T1 is connected to the positive terminal of the first IGBT module, the other end of the switch tube T1 is connected to one end of the switch tube T2, the connection point of the switch tubes T1 and T2 is connected to the output terminal of the first IGBT module, and the other end of the switch tube T2 is connected to the negative terminal of the first IGBT module.

[0016] Optionally, the second IGBT module includes switch tubes T3 and T4, one end of the switch tube T3 is connected to the N terminal of the second IGBT module, the other end of the switch tube T3 is connected to one end of the switch tube T4, and the other end of the switch tube T4 is connected to the output terminal of the second IGBT module.

[0017] On the other hand, the utility model also provides the following technical solutions:

[0018] An energy storage converter comprises any one of the T-type three-level modules mentioned above.

[0019] One or more technical solutions provided by the utility model have at least the following technical effects or advantages:

[0020] In the utility model, since the three first IGBT modules are arranged in parallel in the second direction, and the three second IGBT modules are arranged in parallel in the second direction, the capacitor group, the three first IGBT modules, and the three second IGBT modules are symmetrical in the upper and lower parts, the current path distances from the positive row to the three first IGBT modules are basically the same, the current path distances from the negative row to the three first IGBT modules are basically the same, the current path distances from the three first IGBT modules to the output row are basically the same, the current path distances from the N row to the three second IGBT modules are basically the same, and the current path distances from the three second IGBT modules to the output row are basically the same, so the impedances of the current loops are basically the same, so that the currents of the various loops of the T-type three-level module are more evenly distributed. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 A schematic diagram of the structure of a T-type three-level module in an embodiment of the utility model;

[0023] Figure 2 This is another structural schematic diagram of a T-type three-level module in an embodiment of the utility model;

[0024] Figure 3 for Figure 2 Circuit diagram of the T-type three-level module.

[0025] Explanation of the reference numerals: 10 - positive row; 20 - negative row; 30 - N row; 40 - output row; 50 - current sharing row; 60 - first IGBT module; 70 - second IGBT module; 80 - vertical slot. DETAILED DESCRIPTION

[0026] The embodiment of the utility model solves the technical problem of how to make the T-type three-level module more current-balanced by providing a T-type three-level module and an energy storage converter.

[0027] In order to better understand the technical solution of the present invention, the technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0028] like Figure 1The figure shows an optional structure of a T-type three-level module, where N+ is the positive pole of the capacitor group, and N- is the negative pole of the capacitor group. There are three current paths: one is from N+ through the positive row of the capacitor group to the "+" terminal of the middle IGBT module, then to the output terminal "O" of the middle IGBT module, and finally to the current sharing row through the output row; the second is from N- through the negative row of the capacitor group to the "-" terminal of the middle IGBT module, then to the output terminal "O" of the middle IGBT module, and finally to the current sharing row through the output row; the third is from the N pole of the capacitor group through the N row of the capacitor group to the N terminal of the right IGBT module, then to the output terminal "O" of the right IGBT module, and finally to the current sharing row through the output row. It can be seen that the current path distances from the positive row to the "+" terminal of the three IGBT modules are different, and the current path distances from the negative row to the "-" terminal of the three IGBT modules are also different, resulting in different impedances of each current loop, resulting in uneven current flow in each loop.

[0029] like Figure 2 As shown, the T-type three-level module of the embodiment of the utility model includes a capacitor group, three first IGBT modules and three second IGBT modules; the negative middle capacitor in the capacitor group, the positive middle capacitor in the capacitor group, the three first IGBT modules and the three second IGBT modules are arranged in sequence in the first direction; the three first IGBT modules are arranged in parallel in the second direction, and the three second IGBT modules are arranged in parallel in the second direction, and the second direction is perpendicular to the first direction; the capacitor group, the three first IGBT modules and the three second IGBT modules have a symmetry axis in the first direction; the positive terminal and the negative terminal of the first IGBT module are both located near the electrode of the first IGBT module. At one end of the capacitor group, the output terminal of the first IGBT module is located at an end of the first IGBT module close to the second IGBT module, the output terminal of the second IGBT module is located at an end of the second IGBT module close to the first IGBT module, and the N terminal of the second IGBT module is located at an end of the second IGBT module away from the first IGBT module; the positive row of the positive middle capacitor is connected to the positive terminals of the three first IGBT modules, the negative row of the negative middle capacitor is connected to the negative terminals of the three first IGBT modules, the output terminals of the three first IGBT modules are connected to the output terminals of the three second IGBT modules through the output row, and the N row of the capacitor group is connected to the N terminal of the second IGBT module.

[0030] Among them, based on Figure 2 , the first direction is Figure 2 The left and right directions of Figure 2The capacitor group includes 4 negative middle capacitors (N-capacitors) arranged in a "mouth" shape and 4 positive middle capacitors (N+capacitors) arranged vertically. The 4 negative middle capacitors, 4 positive middle capacitors, 3 first IGBT modules, and 3 second IGBT modules are arranged from left to right. The 3 first IGBT modules are arranged in parallel in the vertical direction, and the 3 second IGBT modules are arranged in parallel in the vertical direction. The capacitor group, the 3 first IGBT modules, and the 3 second IGBT modules are symmetrical in the upper and lower parts. The positive terminal, negative terminal, and output terminal of the first IGBT module are "+", "-", and "O", respectively, and the output terminal and N terminal of the second IGBT module are "O" and "N", respectively.

[0031] Figure 2 The circuit principle is as follows Figure 3 As shown, the first IGBT module includes switch tubes T1 and T2, one end of the switch tube T1 is connected to the positive terminal of the first IGBT module, the other end of the switch tube T1 is connected to one end of the switch tube T2, the connection point of the switch tubes T1 and T2 is connected to the output terminal of the first IGBT module, and the other end of the switch tube T2 is connected to the negative terminal of the first IGBT module. The second IGBT module includes switch tubes T3 and T4, one end of the switch tube T3 is connected to the N terminal of the second IGBT module, the other end of the switch tube T3 is connected to one end of the switch tube T4, and the other end of the switch tube T4 is connected to the output terminal of the second IGBT module.

[0032] Figure 2 The three current paths in the T-type three-level module are: from N+ through the positive row to the "+" terminal of the first IGBT module, then to the output terminal "O" of the first IGBT module, and finally to the output row; from N- through the negative row to the "-" terminal of the first IGBT module, then to the output terminal "O" of the first IGBT module, and finally to the output row; from the N pole of the capacitor group through the N row of the capacitor group to the N terminal of the second IGBT module, then to the output terminal "O" of the second IGBT module, and finally to the output row.

[0033] It can be understood that since the three first IGBT modules are arranged in parallel in the second direction and the three second IGBT modules are arranged in parallel in the second direction, the capacitor group, the three first IGBT modules and the three second IGBT modules are symmetrical in terms of top and bottom, the current path distances from the positive row to the three first IGBT modules are basically the same, the current path distances from the negative row to the three first IGBT modules are basically the same, the current path distances from the three first IGBT modules to the output row are basically the same, the current path distances from the N row to the three second IGBT modules are basically the same, and the current path distances from the three second IGBT modules to the output row are basically the same, so the impedances of each current loop are basically the same, making the current of each loop of the T-type three-level module more evenly distributed.

[0034] In the embodiment of the utility model, the first IGBT module with the "+" terminal and the "-" terminal on the left side has many models, for example, the first IGBT module can be an Infineon ME4 module. The second IGBT module can be an Infineon common emitter module.

[0035] in addition, Figure 1 In the T-type three-level module, the middle of the output row is also connected to a current-sharing bar as the total output. In this way, the distance between the two middle IGBT modules and the current-sharing bar is different from the distance between the upper and lower rows of IGBT modules and the current-sharing bar, that is, the impedance is different, resulting in uneven current. In order to make the output of the T-type three-level module more evenly distributed, such as Figure 2 As shown, in the T-type three-level module of the embodiment of the utility model, the output row close to the position of the middle first IGBT module among the three first IGBT modules and the output row close to the position of the middle second IGBT module among the three second IGBT modules are respectively provided with vertical grooves, and a current balancing bar is connected between the two vertical grooves. In this way, the impedance of the middle first IGBT module and the second IGBT module to the current balancing bar and the impedance of the first IGBT module and the second IGBT module in the upper and lower rows to the current balancing bar can be closer, so that the current of each loop is more evenly distributed.

[0036] in addition, Figure 1 The T-type three-level module also has the problem of high stray inductance, which leads to a large IGBT turn-off spike, a large turn-off loss and is prone to overvoltage faults. In order to reduce the stray inductance of the module and thus reduce the IGBT turn-off spike, in the embodiment of the utility model, the positive row, negative row and N row of the capacitor group are arranged from the inside to the outside, the positive row and negative row of the capacitor group are crimped together, and the N row is installed separately. In this way, by stacking the positive row, negative row and N row, the cross-overlap of the circuit is reduced, the stray inductance of the busbar can be reduced, and the IGBT turn-off spike can be reduced. In addition, from Figure 2 It can be seen that the distance from the negative center capacitor to the first IGBT module is farther than the distance from the positive center capacitor to the first IGBT module. In the same stacking case, the stray inductance of the negative row N is larger than the stray inductance of the positive row N. In the embodiment of the utility model, the positive row is arranged below the negative row, so that the negative row is only one piece of capacitor insulating paper away from the N row, while the positive row is two pieces of capacitor insulating paper away from the N row, which can ensure that the stray inductance of the N row negative row and the N row positive row are basically the same, ensuring the parameter symmetry of the "positive center" and "negative center" power circuits, and also improving the applicability of the drive circuit parameters.

[0037] The embodiment of the utility model further provides an energy storage converter, comprising any one of the above T-type three-level modules. The impedance of each current loop in the T-type three-level module of the energy storage converter is substantially the same, so that the current of each loop of the T-type three-level module is more evenly distributed.

[0038] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present invention.

[0039] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A T-type three-level module, characterized in that: It includes a capacitor bank, three first IGBT modules and three second IGBT modules; The negative middle capacitor in the capacitor group, the positive middle capacitor in the capacitor group, the three first IGBT modules, and the three second IGBT modules are arranged in sequence in the first direction; The three first IGBT modules are arranged in parallel in a second direction, and the three second IGBT modules are arranged in parallel in the second direction, and the second direction is perpendicular to the first direction; The capacitor group, the three first IGBT modules, and the three second IGBT modules as a whole have a symmetry axis in the first direction; The positive terminal and the negative terminal of the first IGBT module are both located at one end of the first IGBT module close to the capacitor group, the output terminal of the first IGBT module is located at one end of the first IGBT module close to the second IGBT module, the output terminal of the second IGBT module is located at one end of the second IGBT module close to the first IGBT module, and the N terminal of the second IGBT module is located at one end of the second IGBT module away from the first IGBT module; The positive row of the positive middle capacitor is connected to the positive terminals of the three first IGBT modules, the negative row of the negative middle capacitor is connected to the negative terminals of the three first IGBT modules, the output terminals of the three first IGBT modules are connected to the output terminals of the three second IGBT modules through the output row, and the N row of the capacitor group is connected to the N terminal of the second IGBT module.

2. The T-type three-level module according to claim 1, characterized in that: The first IGBT module is an Infineon ME4 module.

3. The T-type three-level module according to claim 1, characterized in that: The second IGBT module is an Infineon common emitter module.

4. The T-type three-level module according to claim 1, characterized in that: A vertical groove is respectively formed at a position of the output row close to the middle first IGBT module among the three first IGBT modules and a position of the output row close to the middle second IGBT module among the three second IGBT modules, and a current equalizing row is connected between the two vertical grooves.

5. The T-type three-level module according to claim 1, characterized in that: The positive row, negative row and N row of the capacitor group are arranged in sequence from the inside to the outside.

6. The T-type three-level module according to claim 1, characterized in that: The first IGBT module includes switch tubes T1 and T2, one end of the switch tube T1 is connected to the positive terminal of the first IGBT module, the other end of the switch tube T1 is connected to one end of the switch tube T2, the connection point of the switch tubes T1 and T2 is connected to the output terminal of the first IGBT module, and the other end of the switch tube T2 is connected to the negative terminal of the first IGBT module.

7. The T-type three-level module according to claim 1, characterized in that: The second IGBT module includes switch tubes T3 and T4. One end of the switch tube T3 is connected to the N terminal of the second IGBT module, the other end of the switch tube T3 is connected to one end of the switch tube T4, and the other end of the switch tube T4 is connected to the output terminal of the second IGBT module.

8. An energy storage converter, characterized in that: It comprises the T-type three-level module described in any one of claims 1-7.

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