Inflation pipeline, semiconductor equipment and inflation system

Abstract

The utility model provides an inflation pipeline, semiconductor equipment and an inflation system, the inflation pipeline is used for inflating the semiconductor equipment, and the first end of the inflation pipeline is provided with a first flange joint; wherein the first end of the inflation pipeline is used for being in flange connection with an internal gas storage container of the semiconductor equipment through the first flange joint, and the second end of the inflation pipeline is used for being connected with an external gas container in which electronic gas is stored; and the external gas container supplies the electronic gas to the internal gas storage container through the inflation pipeline. The fastening degree of the joint between the inflation pipeline and the internal gas storage container can be improved, and therefore the risk of gas leakage can be reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an inflation pipeline, a semiconductor device and an inflation system. Background Art

[0002] Semiconductor equipment can use corresponding electronic gases to implement corresponding semiconductor processes. For example, doping equipment can use doping gas to implement doping processes, ion implanters can use ion implantation gas to implement ion implantation processes, and ion etcher can use plasma etching gas to implement ion etching processes.

[0003] Since the electronic gas in the internal gas storage container (eg, ACC tank) of the semiconductor device is consumed, it is necessary to periodically replenish the electronic gas to the internal gas storage container of the semiconductor device.

[0004] In the related art, a gas filling pipeline is used to connect the internal gas storage container of the semiconductor device and the external gas container storing the electronic gas. However, since the gas filling pipeline and the internal gas storage container are connected by threads, there are problems such as gas leakage.

[0005] In view of the existence of the above technical problems, the present application provides a new inflation pipeline, semiconductor equipment and inflation system to at least partially solve the above problems. Utility Model Content

[0006] A series of simplified concepts are introduced in the utility model content section, which will be further described in detail in the detailed implementation section. The utility model content section of this application does not mean to attempt to define the key features and essential technical features of the technical solution claimed for protection, nor does it mean to attempt to determine the scope of protection of the technical solution claimed for protection.

[0007] In view of the existing problems, the present application provides an inflating pipeline, characterized in that the inflating pipeline is used to inflate semiconductor equipment, and the first end of the inflating pipeline has a first flange joint;

[0008] Among them, the first end of the filling pipeline is used to be flange-connected to the internal gas storage container of the semiconductor device through the first flange joint, and the second end of the filling pipeline is used to connect to an external gas container storing electronic gas, so that the external gas container supplies the electronic gas to the internal gas storage container through the filling pipeline.

[0009] In some embodiments of the present application, the inflation pipeline includes a first pipeline portion, a cavity portion, and a second pipeline portion which are connected in sequence, and the first flange joint is disposed on the first pipeline portion.

[0010] The inner diameter of the first pipeline portion and the inner diameter of the second pipeline portion are both smaller than the inner diameter of the cavity portion.

[0011] In some embodiments of the present application, a first switch valve is provided on the first pipeline portion or the second pipeline portion.

[0012] In some embodiments of the present application, a check valve is provided on the first pipeline portion or the second pipeline portion.

[0013] In some embodiments of the present application, a pressure gauge is provided on the cavity portion.

[0014] In some embodiments of the present application, a safety valve is provided on the cavity portion.

[0015] In some embodiments of the present application, a de-impurity / pressure relief pipeline is provided on the cavity portion, and a second switch valve is provided on the de-impurity / pressure relief pipeline.

[0016] According to another aspect of the present application, there is provided a semiconductor device, wherein a second flange joint is provided on an internal gas storage container of the semiconductor device;

[0017] The internal gas storage container is used to be flange-connected to a gas charging pipeline via the second flange joint, so as to supply electronic gas to the internal gas storage container via the gas charging pipeline.

[0018] In some embodiments of the present application, the semiconductor device includes a doping device, an ion implanter, or an ion etcher.

[0019] According to another aspect of the present application, an inflation system is provided, comprising the inflation pipeline described in any one of the above and the semiconductor device, wherein the inflation pipeline and the internal gas storage container of the semiconductor device are flange-connected via a first flange joint and a second flange joint.

[0020] According to the gas charging pipeline, semiconductor device and gas charging system of the embodiment of the present application, the gas charging pipeline and the internal gas storage container of the semiconductor device are flange-connected through a flange joint, which can improve the tightness of the connection between the gas charging pipeline and the internal gas storage container compared to the threaded connection, thereby reducing the risk of gas leakage. In addition, the flange connection is more convenient to disassemble and assemble, which saves time and effort, is easy to tighten, and can be disassembled and assembled multiple times without damage. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The following drawings of the present application are used as a part of the present application for understanding the present application. The drawings show the embodiments of the present application and their descriptions, which are used to explain the principle of the present application.

[0022] Figure 1A schematic diagram showing a related art method of connecting an internal gas storage container of a semiconductor device and an external gas container storing electronic gas through a gas filling pipeline.

[0023] Figure 2 A schematic structural diagram of an inflation pipeline according to an embodiment of the present application is shown.

[0024] Figure 3 A schematic structural diagram of an internal gas storage container of a semiconductor device according to an embodiment of the present application is shown.

[0025] Figure 4 An exploded view of an inflation system according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0026] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present application. However, it is apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features well known in the art are not described.

[0027] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0028] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0029] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0030] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0031] In related technologies, such as Figure 1 As shown, a gas filling pipeline 110 is used to connect an internal gas storage container 120 of a semiconductor device and an external gas container 130 storing electronic gas. However, since the gas filling pipeline 110 and the internal gas storage container 120 are connected by a threaded connection, at least the following problems exist:

[0032] 1. The threaded connection between the inflation pipeline 110 and the internal gas storage container 120 cannot be tightened, resulting in air leakage;

[0033] 2. The pipe diameter of the threaded joint is large, and large-sized wrenches and other tools are required for disassembly and assembly. This is not only time-consuming and labor-intensive and difficult to tighten, but the threaded joint is also easily damaged due to frequent disassembly and assembly.

[0034] In order to solve at least one of the above-mentioned technical problems, the present application provides a gas filling pipeline, which is used to fill a semiconductor device, and the first end of the gas filling pipeline has a first flange joint; wherein the first end of the gas filling pipeline is used to be flange-connected to an internal gas storage container of the semiconductor device through the first flange joint, and the second end of the gas filling pipeline is used to connect to an external gas container storing electronic gas, so that the external gas container supplies the electronic gas to the internal gas storage container through the gas filling pipeline.

[0035] According to the gas charging pipeline of the present application, the gas charging pipeline is flange-connected to the internal gas storage container of the semiconductor device through the first flange joint, which can improve the tightness of the connection between the gas charging pipeline and the internal gas storage container compared to the threaded connection, thereby reducing the risk of gas leakage. In addition, the flange connection is more convenient to disassemble and assemble, which saves time and effort, is easy to tighten, and can be disassembled and assembled multiple times without damage.

[0036] In order to thoroughly understand the present application, detailed steps and structures will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0037] Reference below Figure 2 A gas charging line according to an embodiment of the present application is described. The gas charging line 210 is used to charge the semiconductor device, and the first end of the gas charging line 210 has a first flange joint 214; wherein the first end of the gas charging line 210 is used to be flange-connected to an internal gas storage container of the semiconductor device through the first flange joint 214, and the second end of the gas charging line 210 is used to be connected to an external gas container storing electronic gas, so that the external gas container supplies electronic gas to the internal gas storage container through the gas charging line 210.

[0038] In some embodiments, the semiconductor equipment may be a doping device, an ion implanter, an ion etcher, without limitation thereto.

[0039] In some embodiments, the external gas container may be a gas tank, a gas bottle, etc., which is not limited thereto.

[0040] Taking the semiconductor device as a doping device as an example, the electronic gas stored in the external gas container can be a doping gas, such as AsH3 (arsine), PH3 (phosphine), GeH4 (germane), B2H6 (diborane), AsCl3 (arsenic trichloride), AsF3 (arsenic trifluoride), etc., without limitation. The external gas container is connected to the second end of the filling pipeline 210, and the first end of the filling pipeline 210 is flange-connected to the internal gas storage container of the doping device, so that the external gas container can provide the doping gas to the internal gas storage container of the doping device through the filling pipeline 210, so as to replenish the doping gas for the doping device.

[0041] Taking the semiconductor equipment as an ion implanter as an example, the electronic gas stored in the external gas container can be an ion implantation gas, such as AsF3 (arsenic trifluoride), PH3 (phosphine), BF3 (boron trifluoride), BCl3 (boron trichloride), SiF4 (silicon tetrafluoride), SF6 (sulfur hexafluoride), etc., without limitation. The external gas container is connected to the second end of the gas filling pipeline 210, and the first end of the gas filling pipeline 210 is flange-connected to the internal gas storage container of the ion implanter, so that the external gas container can provide ion implantation gas to the internal gas storage container of the ion implanter through the gas filling pipeline 210 to replenish the ion implantation gas for the ion implanter.

[0042] Taking the semiconductor equipment as an ion etcher as an example, the electronic gas stored in the external gas container can be a plasma etching gas, such as SiF4 (silicon tetrafluoride), CF4, C3F8, CHF3, C2F6, CClF3, SF6 (sulfur hexafluoride), etc., without limitation. The external gas container is connected to the second end of the gas filling pipeline 210, and the first end of the gas filling pipeline 210 is flange-connected to the internal gas storage container of the ion etcher, so that the external gas container can provide plasma etching gas to the internal gas storage container of the ion etcher through the gas filling pipeline 210, thereby replenishing the plasma etching gas for the ion etcher.

[0043] Of course, in addition to the examples mentioned above, the semiconductor device can also be any other suitable device. Accordingly, the external gas container can store electronic gas corresponding to the semiconductor device, and when the electronic gas in the internal gas storage container of the semiconductor device is insufficient, the semiconductor device can be replenished with gas through the filling pipeline 210 of this embodiment.

[0044] Based on this, the present application provides a gas charging pipeline 210 capable of charging semiconductor equipment. According to the gas charging pipeline 210 of the present application, the gas charging pipeline 210 is flange-connected to the internal gas storage container of the semiconductor equipment through the first flange joint 214. Compared with the threaded connection, the tightness of the connection between the gas charging pipeline 210 and the internal gas storage container can be improved, thereby reducing the risk of gas leakage. In addition, the flange connection is more convenient to disassemble and assemble, which saves time and effort, is easy to tighten, and can be disassembled and assembled multiple times without damage.

[0045] In some embodiments, Figure 2 As shown, the inflation pipeline 210 includes a first pipeline portion 211, a cavity portion 212 and a second pipeline portion 213 which are connected in sequence, and a first flange joint 214 is arranged on the first pipeline portion 211. The inner diameter of the first pipeline portion 211 and the inner diameter of the second pipeline portion 213 are both smaller than the inner diameter of the cavity portion 212.

[0046] Specifically, the first pipeline portion 211 is flange-connected to the internal gas storage container of the semiconductor device through the first flange joint 214, and the second pipeline portion 213 is connected to the external gas container storing electronic gas. The electronic gas stored in the external gas container can pass through the second pipeline portion 213, the cavity portion 212 and the first pipeline portion 211 in sequence, and then be supplied to the internal gas storage container of the semiconductor device to replenish the electronic gas for the semiconductor device.

[0047] In some embodiments, a first switch valve 215 is disposed on the first pipeline portion 211 or the second pipeline portion 213. Figure 2 As shown, the first switch valve 215 is arranged on the second pipeline portion 213. After the internal gas storage container of the semiconductor device is connected to the external gas container through the filling pipeline 210, the first switch valve 215 can be opened to allow the electronic gas in the external gas container to be supplied to the internal gas storage container of the semiconductor device through the filling pipeline 210; after the gas pressure in the internal gas storage container of the semiconductor device reaches a certain value, the first switch valve 215 can be closed to stop the external gas container from supplying gas to the internal gas storage container of the semiconductor device.

[0048] The first switch valve 215 may be a manual valve, an electric valve, etc., which is not limited.

[0049] In some embodiments, a check valve 216 is provided on the first pipeline portion 211 or the second pipeline portion 213. Figure 2 As shown, the check valve 216 is disposed on the second pipeline portion 213 and is located between the cavity portion 212 and the first switch valve 215 .

[0050] Figure 1In the process of the external gas container 130 charging the internal gas container 120 of the semiconductor device through the charging pipeline 110, there may be an accident that the electronic gas in the internal gas container 120 of the semiconductor device flows back into the external gas container 130. In this embodiment, by providing the check valve 216, it can be prevented that the electronic gas in the internal gas container of the semiconductor device flows back into the external gas container during the process of the external gas container charging the internal gas container of the semiconductor device through the charging pipeline 210.

[0051] In some embodiments, Figure 2 As shown, a pressure gauge 217 is provided on the cavity portion 212 .

[0052] Figure 1 In the embodiment, before the external gas container 130 inflates the internal gas storage container 120 of the semiconductor device through the gas charging line 110, the pressure holding test cannot be performed, and it is impossible to monitor whether there is a leak at the connection between the gas charging line 110 and the internal gas storage container 120. In this embodiment, by providing a pressure gauge 217 on the cavity portion 212, before the external gas container inflates the internal gas storage container of the semiconductor device through the gas charging line 210, the first switch valve 215 on the gas charging line 210 can be closed, and the third switch valve 222 on the internal gas storage container can be opened (the third switch valve 222 can refer to Figure 3 As shown), a pressure holding test can be performed. By observing the value changes of the pressure gauge 217, it can be determined whether there is a leak in the connection between the inflation pipeline 210 and the internal gas storage container.

[0053] in addition, Figure 1 In the process of the external gas container 130 charging the internal gas storage container 120 of the semiconductor device through the charging pipeline 110, the pressure of the internal gas storage container cannot be observed in real time due to the lack of a pressure gauge 217 on the charging pipeline 210, which easily leads to excessive pressure. In this embodiment, by providing a pressure gauge 217 on the cavity portion 212, the pressure of the internal gas storage container can be observed in real time through the pressure gauge 217 during the process of the external gas container charging the internal gas storage container of the semiconductor device through the charging pipeline 210, so that the charging of the internal gas storage container is stopped when the pressure of the internal gas storage container reaches a certain value, thereby avoiding excessive pressure.

[0054] In some embodiments, Figure 2As shown, a safety valve 218 is provided on the cavity portion 212. In this embodiment, by providing the safety valve 218 on the cavity portion 212, a corresponding safety pressure can be set through the safety valve 218, so that when the safety pressure is exceeded, the filling of the internal gas storage container is stopped in time to avoid excessive pressure. Among them, the safety pressure value on the safety valve 218 can be set according to actual conditions, and there is no limitation on this. Exemplarily, the safety pressure can be set to 90psi.

[0055] In some embodiments, Figure 2 As shown, the cavity 212 is provided with a cleaning / pressure relief pipeline 2191, and the cleaning / pressure relief pipeline 2191 is provided with a second switch valve 2192. The second switch valve 2192 can be a manual valve, an electric valve, etc., which is not limited.

[0056] Figure 1 In the process, before the external gas container 130 inflates the internal gas storage container 120 of the semiconductor device through the gas filling pipeline 110, the air in the gas filling pipeline 110 cannot be removed, resulting in the air in the gas filling pipeline 110 entering the internal gas storage container 120 when the internal gas storage container 120 is inflated, thereby reducing the purity of the electronic gas in the internal gas storage container 120. In this embodiment, by providing a doping / pressure relief pipeline 2191 on the cavity portion 212, before the external gas container inflates the internal gas storage container of the semiconductor device through the inflation pipeline 210, the first switch valve 215 on the inflation pipeline 210 and the second switch valve 2192 on the doping / pressure relief pipeline 2191 can be opened, and the third switch valve 222 on the internal gas storage container can be closed. Then, electronic gas can be supplied to the inflation pipeline 210 through the external gas container, so that the air in the inflation pipeline 210 is discharged from the doping / pressure relief pipeline 2191; thereafter, the second switch valve 2192 on the doping / pressure relief pipeline 2191 is closed, and the third switch valve 222 on the internal gas storage container is opened, so that the external gas container can inflate the internal gas storage container of the semiconductor device through the inflation pipeline 210. Since the air in the gas filling pipeline 210 is removed in advance through the impurity removal / pressure relief pipeline 2191, it is possible to prevent the air in the gas filling pipeline 210 from affecting the purity of the electronic gas in the internal gas storage container.

[0057] in addition, Figure 1In the embodiment, after the external gas container 130 completes the filling of the internal gas storage container 120 of the semiconductor device through the filling pipeline 110, since the filling pipeline 110 also has a relatively high pressure at this time, there is a certain danger when removing the filling pipeline 110. In this embodiment, by providing the impurity removal / pressure relief pipeline 2191 on the cavity portion 212, after the external gas container completes the filling of the internal gas storage container of the semiconductor device through the filling pipeline 210, the first switch valve 215 on the filling pipeline 210 and the third switch valve 222 on the internal gas storage container can be closed, and the second switch valve 2192 on the impurity removal / pressure relief pipeline 2191 can be opened, so that the gas with a relatively high pressure in the filling pipeline 210 is discharged from the impurity removal / pressure relief pipeline 2191, so that the internal pressure of the filling pipeline 210 can be released, and the danger when removing the filling pipeline 210 is reduced.

[0058] According to another aspect of the present application, a semiconductor device is also provided. Figure 3 As shown, a second flange joint 221 is provided on the internal gas storage container 220 of the semiconductor device; wherein the internal gas storage container 220 is used to be flange-connected to the gas filling pipeline through the second flange joint 221 to supply electronic gas to the internal gas storage container 220 through the gas filling pipeline.

[0059] In some embodiments, the internal gas storage container 220 can be flange-connected to one end of the gas filling pipeline via a second flange joint 221, and the other end of the gas filling pipeline is connected to an external gas container storing electronic gas, so that the external gas container can provide electronic gas to the internal gas storage container 220 of the semiconductor device through the gas filling pipeline, thereby replenishing the electronic gas for the semiconductor device.

[0060] Among them, the semiconductor equipment can be a doping device, an ion implanter, an ion etcher, and reference can be made to the above description without limitation.

[0061] According to the semiconductor device of the present application, the internal gas storage container 220 of the semiconductor device is flange-connected to the gas charging pipeline through the second flange joint, which can improve the tightness of the connection between the gas charging pipeline and the internal gas storage container 220 compared to the threaded connection, thereby reducing the risk of gas leakage. In addition, the flange connection is more convenient to disassemble and assemble, which saves time and effort, is easy to tighten, and can be disassembled and assembled multiple times without damage.

[0062] In some embodiments, Figure 3 As shown, the internal gas storage container 220 of the semiconductor device is provided with a third switch valve 222. The third switch valve 222 can be a manual valve, an electric valve, etc., which is not limited.

[0063] According to another aspect of the present application, an inflation system is also provided. Figure 4As shown, the gas filling system includes a gas filling pipeline 210 and a semiconductor device 220, and the gas filling pipeline 210 and the internal gas storage container 220 of the semiconductor device are flange-connected through a first flange joint and a second flange joint.

[0064] Among them, the inflation pipeline can be implemented as the inflation pipeline mentioned above, and the semiconductor device can be implemented as the semiconductor device mentioned above. Please refer to the introduction above and will not repeat it here.

[0065] The first flange joint may be an O-RING flange joint, the second flange joint may be a KF50 quick-connect flange joint, or the first flange joint and the second flange joint may be any other suitable flange joints, which are not limited thereto.

[0066] In some embodiments, Figure 4 As shown, the gas filling system further includes an external gas container 230 storing electronic gas.

[0067] In this embodiment, the first end of the filling pipeline 210 and the internal gas storage container 220 of the semiconductor device can be flange-connected via a first flange joint and a second flange joint, and the second end of the filling pipeline 210 is connected to the external gas container 230. The external gas container 230 can provide electronic gas to the internal gas storage container 220 of the semiconductor device through the filling pipeline 210 to replenish the electronic gas for the semiconductor device.

[0068] In summary, according to the gas charging pipeline, semiconductor device and gas charging system of the embodiment of the present application, the gas charging pipeline and the internal gas storage container of the semiconductor device are flange-connected through a flange joint, which can improve the tightness of the connection between the gas charging pipeline and the internal gas storage container compared to the threaded connection, thereby reducing the risk of gas leakage. In addition, the flange connection is more convenient to disassemble and assemble, which saves time and effort, is easy to tighten, and can be disassembled and assembled multiple times without damage.

[0069] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely exemplary and are not intended to limit the scope of the present application to this. Those of ordinary skill in the art may make various changes and modifications therein without departing from the scope and spirit of the present application. All these changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0070] Similarly, it should be understood that in order to streamline the present application and help understand one or more of the various application aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, the method of the present application should not be interpreted as reflecting the following intention: the claimed application requires more features than the features clearly stated in each claim. More specifically, as reflected in the corresponding claims, the application point is that the corresponding technical problem can be solved with less than all the features of a single disclosed embodiment. Therefore, the claims following the specific embodiment are hereby explicitly incorporated into the specific embodiment, wherein each claim itself serves as a separate embodiment of the present application.

[0071] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0072] It should be noted that the above embodiments illustrate rather than limit the present application, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets should not be construed as a limitation to the claims. The use of the words first, second, and third, etc. does not indicate any order. These words may be interpreted as names.

Claims

1. An inflation pipeline, characterized in that: The gas charging pipeline is used to charge the semiconductor device, and the first end of the gas charging pipeline has a first flange joint; Among them, the first end of the filling pipeline is used to be flange-connected to the internal gas storage container of the semiconductor device through the first flange joint, and the second end of the filling pipeline is used to connect to an external gas container storing electronic gas, so that the external gas container supplies the electronic gas to the internal gas storage container through the filling pipeline.

2. The inflation pipeline according to claim 1, characterized in that: The inflation pipeline includes a first pipeline portion, a cavity portion, and a second pipeline portion which are connected in sequence, and the first flange joint is arranged on the first pipeline portion. The inner diameter of the first pipeline portion and the inner diameter of the second pipeline portion are both smaller than the inner diameter of the cavity portion.

3. The inflation pipeline according to claim 2, characterized in that: The first pipeline portion or the second pipeline portion is provided with a first switch valve.

4. The inflation pipeline according to claim 2, characterized in that: A check valve is provided on the first pipeline portion or the second pipeline portion.

5. The inflation pipeline according to claim 2, characterized in that: A pressure gauge is arranged on the cavity part.

6. The inflation pipeline according to claim 2, characterized in that: A safety valve is arranged on the cavity portion.

7. The inflation pipeline according to claim 2, characterized in that: The cavity portion is provided with a debris removal / pressure relief pipeline, and the debris removal / pressure relief pipeline is provided with a second switch valve.

8. A semiconductor device, characterized in that: A second flange joint is provided on the internal gas storage container of the semiconductor device; The internal gas storage container is used to be flange-connected to a gas charging pipeline via the second flange joint, so as to supply electronic gas to the internal gas storage container via the gas charging pipeline.

9. The semiconductor device according to claim 8, wherein: The semiconductor equipment includes a doping device, an ion implanter or an ion etcher.

10. An inflation system, characterized in that: It comprises a gas filling pipeline as described in any one of claims 1 to 7 and a semiconductor device as described in claim 8 or 9, wherein the gas filling pipeline and an internal gas storage container of the semiconductor device are flange-connected via a first flange joint and a second flange joint.

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