Photoelectric detector and photoelectric sensing system

Abstract

The utility model discloses a photoelectric detector and a photoelectric sensing system, the photoelectric detector comprises a substrate layer, one side of the substrate layer close to an n-type electrode layer is provided with first grooves corresponding to contact columns, and the first grooves are respectively embedded with the corresponding contact columns; one side of the light sensing layer is fixedly connected with the substrate layer, the other side of the light sensing layer is provided with a plurality of second grooves, the light sensing layer comprises a light sensing area and a non-light sensing area, the light sensing area is used for absorbing incident light, and the second grooves are used for refracting and scattering the incident light; the p-type electrode layer is arranged on one side, far away from the substrate layer, of the non-photoinduction area; according to the photoelectric detector provided by the utility model, the sensitivity of the photoelectric detector can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photoelectric detection, in particular to a photoelectric detector and a photoelectric sensing system. Background Art

[0002] Photodetectors convert light into electricity in optical communication systems. This is mainly based on the photovoltaic effect of photosensitive materials. The so-called photovoltaic effect refers to the phenomenon that light causes a potential difference between different parts of uneven semiconductors or semiconductors combined with metals. Photodetectors are usually composed of electrodes and photosensitive materials. The photosensitive materials receive photons to convert them into electrical signals, and transmit the electrical signals to the electric meter through the electrodes.

[0003] In the prior art, light-sensitive materials are usually made based on a conductive substrate. When an electrode is connected to the conductive substrate, the resistance between the light-sensitive material, the conductive substrate and the electrode is relatively large, which will result in low sensitivity of the photodetector. Utility Model Content

[0004] The following is a summary of the subject matter described in detail herein; this summary is not intended to limit the scope of the claims.

[0005] The utility model provides a photoelectric detector and a photoelectric sensing system, which can improve the sensitivity of the photoelectric detector.

[0006] To achieve the above-mentioned purpose, the first aspect of the utility model proposes a photodetector, comprising: an n-type electrode layer, a plurality of contact pillars are arranged on one side of the n-type electrode layer; a substrate layer, a first groove corresponding to each of the contact pillars is arranged on the side of the substrate layer close to the n-type electrode layer, and each of the first grooves is respectively embedded with the corresponding contact pillar; a photosensitive layer, one side of the photosensitive layer is fixedly connected to the substrate layer, and a plurality of second grooves are arranged on the other side of the photosensitive layer, the photosensitive layer includes a photosensitive area and a non-photosensitive area, the photosensitive area is used to absorb incident light, and the second grooves are used to refract and scatter incident light; a p-type electrode layer, arranged on the side of the non-photosensitive area away from the substrate layer.

[0007] In one embodiment, the light sensing layer is a vanadium oxide thermal sensitive semiconductor layer.

[0008] In one embodiment, bismuth quantum dots are disposed on a surface of the light sensing layer away from the substrate layer.

[0009] In one embodiment, the diameter of the bismuth quantum dots ranges from 1 nanometer to 10 nanometers.

[0010] In one embodiment, the cross section of the second groove is circular.

[0011] In one embodiment, a diameter of the second trench ranges from 10 nanometers to 5000 nanometers.

[0012] In one embodiment, a cross section of the second groove is a regular hexagon.

[0013] In one embodiment, the diameter of the inscribed circle of the second groove ranges from 10 nanometers to 5000 nanometers.

[0014] To achieve the above objectives, the second aspect of the present invention proposes a photoelectric sensing system, comprising: the photoelectric detector as described in the first aspect; an inductor, one end of which is connected to the n-type electrode layer, and the other end of which is connected to the p-type electrode layer.

[0015] In one embodiment, the photoelectric sensing system further includes: an execution device; and a control chip, wherein the electrical sensor and the execution device are electrically connected to the control chip respectively.

[0016] The embodiments of the present application include at least the following beneficial effects: by arranging a plurality of contact pillars on the n-type electrode layer and arranging corresponding first grooves on the substrate layer, each contact pillar is engaged with the corresponding first groove, so that the contact area between the n-type electrode layer and the substrate layer can be increased, thereby improving the efficiency of electrical signal transmission between the substrate layer and the n-type electrode layer, and the n-type electrode layer extends into the substrate layer through the contact pillars, reducing the distance between the n-type electrode layer and the photosensitive layer, and improving the efficiency of electrical signal transmission between the photosensitive layer, the substrate layer and the n-type electrode layer, thereby improving the sensitivity of the photodetector; by arranging a plurality of second grooves on the side of the photosensitive layer away from the substrate layer, the second grooves are used to refract and scatter incident light, and the second grooves can also increase the surface area of ​​the photosensitive layer, thereby also improving the sensitivity of the photodetector.

[0017] Other features and advantages of the utility model will be described in the following description, and partly become apparent from the description, or understood by practicing the utility model. The purpose and other advantages of the utility model can be realized and obtained by the structures specifically pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide a further understanding of the technical solution of the utility model and constitute a part of the specification. Together with the embodiments of the utility model, they are used to explain the technical solution of the utility model and do not constitute a limitation on the technical solution of the utility model.

[0019] Figure 1 A schematic diagram of an optional structure of a photoelectric detector provided in an embodiment of the utility model;

[0020] Figure 2Another optional structural schematic diagram of the photoelectric detector provided in the embodiment of the utility model. DETAILED DESCRIPTION

[0021] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0022] In the description of the present invention, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0023] In the description of the present utility model, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0024] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0025] At present, photosensitive materials are usually made based on conductive substrates. When the electrode is connected to the conductive substrate, the resistance between the photosensitive material, the conductive substrate and the electrode is large, which will lead to low sensitivity of the photodetector.

[0026] In view of the problem that the resistance between the photosensitive material, the conductive substrate and the electrode is large and the sensitivity of the photodetector is low, the utility model provides a photodetector and a photoelectric sensing system, the photodetector comprising: an n-type electrode layer, one side of the n-type electrode layer is provided with a plurality of contact pillars; a substrate layer, a side of the substrate layer close to the n-type electrode layer is provided with a first groove corresponding to each of the contact pillars, each of the first grooves is respectively embedded with the corresponding contact pillar; a photosensitive layer, one side of the photosensitive layer is fixedly connected to the substrate layer, and the other side of the photosensitive layer is provided with a plurality of second grooves, the photosensitive layer includes a photosensitive area and a non-photosensitive area, the photosensitive area is used to absorb incident light, and the second grooves are used to refract and scatter the incident light; a p-type electrode layer is provided in the non-photosensitive area away from the One side of the substrate layer; according to the solution provided by the embodiment of the utility model, by arranging a plurality of contact pillars on the n-type electrode layer and arranging a corresponding first groove on the substrate layer, each contact pillar is engaged with the corresponding first groove, the contact area between the n-type electrode layer and the substrate layer can be increased, thereby improving the efficiency of electrical signal transmission between the substrate layer and the n-type electrode layer, and the n-type electrode layer extends into the substrate layer through the contact pillars, reducing the distance between the n-type electrode layer and the photosensitive layer, and can improve the efficiency of electrical signal transmission between the photosensitive layer, the substrate layer and the n-type electrode layer, thereby improving the sensitivity of the photodetector; by arranging a plurality of second grooves on the side of the photosensitive layer away from the substrate layer, the second grooves are used to refract and scatter the incident light, and the second grooves can also increase the surface area of ​​the photosensitive layer, thereby also improving the sensitivity of the photodetector.

[0027] The following is a further description of the embodiments of the present invention in conjunction with the accompanying drawings.

[0028] Reference Figure 1 and Figure 2 , the utility model embodiment provides a photoelectric detector, including:

[0029] An n-type electrode layer 100 , wherein a plurality of contact pillars 110 are disposed on one side of the n-type electrode layer 100 ;

[0030] A substrate layer 200 , wherein a first groove 210 corresponding to each contact pillar 110 is disposed on one side of the substrate layer 200 close to the n-type electrode layer 100 , and each first groove 210 is respectively embedded with the corresponding contact pillar 110 ;

[0031] A light sensing layer 300, one side of the light sensing layer 300 is connected to the substrate layer 200, and the other side of the light sensing layer 300 is provided with a plurality of second grooves 310, the light sensing layer 300 includes a light sensing area and a non-light sensing area, the light sensing area is used to absorb incident light, and the second grooves 310 are used to refract and scatter the incident light;

[0032] The p-type electrode layer 400 is disposed on a side of the non-photosensitive region away from the substrate layer 200 .

[0033] Based on this, by setting a plurality of contact pillars 110 on the n-type electrode layer 100 and setting corresponding first grooves 210 on the substrate layer 200, each contact pillar 110 is engaged with the corresponding first groove 210, so that the contact area between the n-type electrode layer 100 and the substrate layer 200 can be increased, thereby improving the efficiency of electrical signal transmission between the substrate layer 200 and the n-type electrode layer 100, and the n-type electrode layer 100 extends into the substrate layer 200 through the contact pillars 110, reducing the distance between the n-type electrode layer 100 and the photosensitive layer 300, which can improve the efficiency of electrical signal transmission between the photosensitive layer 300, the substrate layer 200 and the n-type electrode layer 100, thereby improving the sensitivity of the photodetector; by setting a plurality of second grooves 310 on the side of the photosensitive layer 300 away from the substrate layer 200, the second grooves 310 are used to refract and scatter incident light, and the second grooves 310 can also increase the surface area of ​​the photosensitive layer 300, thereby also improving the sensitivity of the photodetector.

[0034] In a specific implementation, the n-type electrode layer 100 is specifically a gold electrode, and the p-type electrode layer 400 is specifically a gold electrode.

[0035] In some embodiments of the present invention, the photosensitive layer 300 is a vanadium oxide thermal-sensitive semiconductor layer, and the photosensitive layer 300 is further doped with bismuth, magnesium and lithium elements.

[0036] It is understandable that bismuth has high conductivity and good thermoelectric properties, and can be used to detect light signals and convert them into electrical signals by doping bismuth in the photosensitive layer 300. In addition, bismuth also has high sensitivity and response speed, which can improve the sensitivity of the photodetector.

[0037] In addition, refer again Figure 1 and Figure 2 In some embodiments of the present invention, bismuth quantum dots 320 are disposed on the surface of the light sensing layer 300 away from the substrate layer 200 , and the diameter of the bismuth quantum dots 320 ranges from 1 nanometer to 10 nanometers.

[0038] It can be understood that bismuth quantum dots 320 have high-efficiency photoelectric conversion capabilities in photoelectric detection due to their unique electronic structure and high quantum yield. Bismuth quantum dots 320 can cover a wide band of near-infrared light, providing photodetectors with broadband spectral response capabilities. By introducing bismuth quantum dots 320, the response speed of the photodetector can also be improved. Moreover, by adjusting the size of bismuth quantum dots 320, its band gap and light absorption characteristics can be controlled, thereby achieving response to light of a specific wavelength.

[0039] In some embodiments of the present invention, the cross section of the second groove 310 is circular, and the diameter of the second groove 310 ranges from 10 nanometers to 5000 nanometers.

[0040] In addition, in some embodiments of the present invention, the cross-section of the second groove 310 may also be a regular hexagon, and the diameter of the inscribed circle of the second groove 310 ranges from 10 nanometers to 5000 nanometers.

[0041] It is understandable that by using gold elements to make the n-type electrode layer 100 and the p-type electrode layer 400, the resistance values ​​of the n-type electrode layer 100 and the p-type electrode layer 400 can be greatly reduced, thereby improving the sensitivity of the photodetector.

[0042] In addition, the utility model also proposes a photoelectric sensing system, comprising:

[0043] The photodetector as in the above embodiment;

[0044] An inductor, one end of the inductor is connected to the n-type electrode layer 100, and the other end of the inductor is connected to the p-type electrode layer;

[0045] Execution equipment;

[0046] The control chip, the electric sensor and the execution device are electrically connected to the control chip respectively.

[0047] It can be understood that the electric inductor can be one or a combination of an ammeter, a voltmeter and a power meter, and the electric inductor is used to obtain the electric energy information generated by the photodetector.

[0048] It is understandable that the specific implementation of the photoelectric sensing system is similar to the above-mentioned photoelectric sensor, and will not be described in detail here.

[0049] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the relevant technical field without departing from the purpose of the present invention.

Claims

1. A photoelectric detector, characterized in that: include: An n-type electrode layer, wherein a plurality of contact pillars are disposed on one side of the n-type electrode layer; A substrate layer, wherein a first groove corresponding to each of the contact pillars is provided on a side of the substrate layer close to the n-type electrode layer, and each of the first grooves is respectively embedded with the corresponding contact pillar; A photosensitive layer, one side of the photosensitive layer is fixedly connected to the substrate layer, and the other side of the photosensitive layer is provided with a plurality of second grooves, the photosensitive layer includes a photosensitive area and a non-photosensitive area, the photosensitive area is used to absorb incident light, and the second grooves are used to refract and scatter the incident light; The p-type electrode layer is arranged on a side of the non-photosensitive region away from the substrate layer.

2. The photodetector according to claim 1, characterized in that: The light-sensitive layer is a vanadium oxide thermal-sensitive semiconductor layer.

3. The photodetector according to claim 2, characterized in that: Bismuth quantum dots are arranged on a surface of the light sensing layer away from the substrate layer.

4. The photodetector according to claim 3, characterized in that: The diameter of the bismuth quantum dots ranges from 1 nanometer to 10 nanometers.

5. The photodetector according to claim 1, characterized in that: The cross section of the second groove is circular.

6. The photodetector according to claim 5, characterized in that: The diameter of the second groove ranges from 10 nanometers to 5000 nanometers.

7. The photodetector according to claim 1, characterized in that: The cross section of the second groove is a regular hexagon.

8. The photodetector according to claim 7, characterized in that: The diameter of the inscribed circle of the second groove ranges from 10 nanometers to 5000 nanometers.

9. A photoelectric sensing system, characterized in that: include: The photodetector according to any one of claims 1 to 8; An inductor, one end of which is connected to the n-type electrode layer, and the other end of which is connected to the p-type electrode layer.

10. The photoelectric sensing system according to claim 9, characterized in that: Also includes: Execution equipment; A control chip, wherein the electric inductor and the execution device are electrically connected to the control chip respectively.

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