Low leakage current cable and semiconductor test equipment
By setting the semiconductor layer and shielded wire in the semiconductor test cable, the problem of large leakage current of the existing cable is solved, and higher testing accuracy and convenient connection process are achieved.
Patent Information
- Application Number
- CN202421391846.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-18
- Publication Date
- 2025-04-22
- Estimated Expiration
- 2034-06-18
AI Technical Summary
The leakage current of existing semiconductor test cables is large, which affects the test accuracy and cannot meet the demand for low leakage current of high-frequency circuits.
A low leakage current cable is designed to reduce friction current and leakage current by covering the semiconductor layer outside the first and second insulating layers and providing shielding lines when the shielding layer is connected to the external line.
It effectively reduces the leakage current of low leakage current cables, improves testing accuracy, and simplifies the process of connecting cables to external circuits, improving the convenience of use.
Smart Images
Figure CN222785060U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of test cables, in particular to a low leakage current cable and semiconductor testing equipment. Background Art
[0002] As semiconductor testing requirements become increasingly demanding, the test accuracy requirements for semiconductor test systems are also increasing. In semiconductor test systems, a large number of low leakage current cables are required, but the leakage current of general cables is large, which affects the test accuracy. Utility Model Content
[0003] An object of the first aspect of the utility model is to provide a low leakage current cable to solve the technical problem in the prior art that the leakage current of the cable is large and affects the test accuracy.
[0004] A further object of the first aspect of the present invention is to improve the ease of use of the low leakage current cable.
[0005] A second aspect of the present invention aims to provide a semiconductor testing device comprising the low leakage current cable.
[0006] According to the purpose of the first aspect of the utility model, the utility model provides a low leakage current cable, comprising:
[0007] A first metal conductor and a second metal conductor arranged in parallel;
[0008] A first insulating layer, covering the outer side of the first metal conductor;
[0009] A second insulating layer, covering the outer side of the second metal conductor;
[0010] A semiconductor layer, covering the outer sides of the first insulating layer and the second insulating layer;
[0011] A shielding layer, covering the outer side of the semiconductor layer, wherein the shielding layer is connected to an external circuit;
[0012] The third insulating layer is coated on the outer side of the shielding layer.
[0013] Optionally, the thickness of the first insulating layer is in the range of 0.35 mm to 0.6 mm.
[0014] Optionally, the dielectric constant of the material used for the first insulating layer is any value less than 2.1Frequency 1e+6Hz.
[0015] Optionally, the thickness of the second insulating layer is any value between 0.35 mm and 0.6 mm.
[0016] Optionally, the dielectric constant of the material used for the second insulating layer is any value less than 2.1Frequency 1e+6Hz.
[0017] Optionally, the low leakage current cable further includes:
[0018] At least one shielding wire is disposed between the semiconductor layer and the shielding layer and / or between the shielding layer and the third insulating layer, and the shielding wire is connected to the shielding layer and to the external line.
[0019] Optionally, there is a gap between the first insulating layer and the second insulating layer, the semiconductor layer has at least one recessed portion recessed toward the gap, and the shielding line is located between the recessed portion and the shielding layer.
[0020] Optionally, the number of the recessed portions and the number of the shielding wires are two respectively, the two recessed portions are arranged opposite to each other, and one shielding wire is arranged at each recessed portion.
[0021] Optionally, the resistivity of the semiconductor material used for the semiconductor layer is any value in the range of 260 kΩ / m to 280 kΩ / m.
[0022] According to the purpose of the second aspect of the utility model, the utility model also provides a semiconductor testing device including the above-mentioned low leakage current cable.
[0023] The low leakage current cable of the utility model comprises a first metal conductor, a second metal conductor, a first insulating layer, a second insulating layer, a semiconductor layer, a shielding layer and a third insulating layer. The first metal conductor and the second metal conductor are arranged in parallel. The first insulating layer is coated on the outside of the first metal conductor, and the second insulating layer is coated on the outside of the second metal conductor. The semiconductor layer is coated on the outside of the first insulating layer and the second insulating layer. The shielding layer is coated on the outside of the semiconductor layer, and the shielding layer is connected to the external circuit. The third insulating layer is coated on the outside of the shielding layer. The above technical solution can reduce the friction current generated when the low leakage current cable vibrates by arranging the semiconductor layer to be coated on the outside of the first insulating layer and the second insulating layer, reduce the leakage current of the low leakage current cable, and help improve the test accuracy.
[0024] Furthermore, the low leakage current cable of the utility model includes at least one shielded wire, which is arranged between the semiconductor layer and the shielding layer and / or between the shielding layer and the third insulating layer. The shielded wire is connected to the shielding layer and to the external line. In this way, there is no need to directly connect the shielding layer to the external circuit, which reduces the difficulty of connecting the low leakage current cable to the external circuit and improves the convenience of using the low leakage current cable.
[0025] Based on the detailed description of the specific embodiments of the present invention in combination with the accompanying drawings below, those skilled in the art will become more aware of the above and other purposes, advantages and features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Hereinafter, some specific embodiments of the present invention will be described in detail in an exemplary and non-limiting manner with reference to the accompanying drawings. The same reference numerals in the accompanying drawings indicate the same or similar components or parts. It should be understood by those skilled in the art that these drawings are not necessarily drawn to scale. In the accompanying drawings:
[0027] Figure 1 is a schematic cross-sectional view of a low leakage current cable according to an embodiment of the utility model;
[0028] Figure 2 is a schematic structural diagram of a low leakage current cable according to an embodiment of the utility model;
[0029] Figure 3 yes Figure 2 Schematic enlargement of point A in the middle.
[0030] Description of reference numerals:
[0031] 100 - low leakage current cable, 10 - first metal conductor, 20 - second metal conductor, 30 - first insulating layer, 40 - second insulating layer, 50 - semiconductor layer, 51 - recessed portion, 60 - shielding layer, 70 - third insulating layer, 80 - shielding wire. DETAILED DESCRIPTION
[0032] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.
[0033] In the description of the present invention, it should be understood that the terms "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0034] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features, that is, include one or more of the features. In the description of the present utility model, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. When a feature "includes or contains" one or some of the features it covers, unless otherwise specifically described, this indicates that other features are not excluded and may further include other features.
[0035] Unless otherwise clearly defined and limited, the term "connection" and other terms should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. A person skilled in the art should be able to understand the specific meanings of the above terms in this utility model according to the specific circumstances.
[0036] Unless otherwise defined, all terms (including technical terms and scientific terms) used in the description of this embodiment have the same meanings as commonly understood by ordinary technicians in the technical field to which this application belongs.
[0037] In existing cables used for semiconductor testing, due to the unreasonable selection of shielding layer materials and cable structure, the leakage current of the cables is large, which affects the test accuracy and cannot meet the semiconductor's leakage current requirements of femtoamperes or below. In high-frequency circuits, large leakage currents will affect the accuracy of the test and reduce the precision and accuracy of semiconductor testing.
[0038] In view of the above problems, an embodiment of the utility model provides a low leakage current cable 100 that overcomes the above problems or at least partially solves the above problems, which can reduce the frictional charging of the low leakage current cable 100, reduce the leakage current of the low leakage current cable 100, and help improve the test accuracy.
[0039] Figure 1 is a schematic cross-sectional view of a low leakage current cable according to an embodiment of the utility model, Figure 2 is a schematic structural diagram of a low leakage current cable according to an embodiment of the utility model, Figure 3 yes Figure 2 A schematic enlarged view of the A in FIG. Figure 1-Figure 3As shown, the low leakage current cable 100 of the utility model comprises a first metal conductor 10, a second metal conductor 20, a first insulating layer 30, a second insulating layer 40, a semiconductor layer 50, a shielding layer 60 and a third insulating layer 70. The first metal conductor 10 and the second metal conductor 20 are arranged in parallel. The first insulating layer 30 is coated on the outside of the first metal conductor 10, and the second insulating layer 40 is coated on the outside of the second metal conductor 20.
[0040] The semiconductor layer 50 is coated on the outside of the first insulating layer 30 and the second insulating layer 40 to reduce the friction current generated when the low leakage current cable 100 vibrates, so as to reduce the leakage current. The shielding layer 60 is coated on the outside of the semiconductor layer 50, and the shielding layer 60 is connected to the external line to shield the signal of the external electromagnetic field. The third insulating layer 70 is coated on the outside of the shielding layer 60 to prevent the shielding layer 60 from contacting the external environment.
[0041] Here, it can be understood that the first metal conductor 10 and the second metal conductor 20 are arranged in parallel and juxtaposed, and both the first metal conductor 10 and the second metal conductor 20 are used to transmit the test signal. The first insulating layer 30 and the second insulating layer 40 are respectively coated on the outside of the first metal conductor 10 and the second metal conductor 20, so that the currents between the first metal conductor 10 and the second metal conductor 20 will not interfere with each other, thereby avoiding signal interference.
[0042] The shielding layer 60 is coated on the outside of the semiconductor layer 50, and can isolate the signal to be tested from the outside world, shielding the interference from the outside world, thereby improving the precision and accuracy of the test. The shielding layer 60 is connected to the external circuit, and can form a good electrical connection to ensure the shielding effect.
[0043] In some embodiments, the shielding layer 60 is a woven metal conductor layer that can transmit shielded signals. The low leakage current cable 100 is welded to the external circuit through the shielding layer 60 to achieve equipotential wrapping. The shielding layer 60 can serve as an equipotential layer for the first metal conductor 10 and the second metal conductor 20. The shielding layer 60 covers the entire first insulating layer 30 and the second insulating layer 40, which can ensure that the potentials of the first metal conductor 10 and the second metal conductor 20 inside the low leakage current cable 100 are equal or similar, thereby reducing the potential difference, reducing the leakage current of the low leakage current cable 100, avoiding safety hazards, and improving the stability and reliability of signal transmission.
[0044] The semiconductor layer 50 is an insulating layer with good insulation performance. It can balance the electric field between the first metal conductor 10 and the second metal conductor 20, reduce the local electric field strength, avoid breakdown caused by excessive electric field strength, and effectively prevent current leakage and external factors from interfering with the cable.
[0045] During the use of the low leakage current cable 100 , it will be subjected to various tensile, compressive, bending and other stresses. The semiconductor layer 50 can play a stress buffering role, reducing the mechanical stress of the low leakage current cable 100 , thereby extending the service life of the low leakage current cable 100 .
[0046] The semiconductor layer 50 is in good contact with the first insulating layer 30, the second insulating layer 40 and the shielding layer 60 respectively, which can avoid local discharge, improve the safety and reliability of the low leakage current cable 100, balance the electric field, reduce discharge and loss, and reduce the generation of friction charges when the cable is bent.
[0047] The third insulating layer 70 is located at the outermost layer of the low leakage current cable 100 , and can protect the internal structure of the low leakage current cable 100 , prevent the shielding layer 60 from contacting external components, and maintain the insulation performance inside the low leakage current cable 100 .
[0048] The low leakage current cable 100 of the embodiment of the utility model can reduce the friction current of the low leakage current cable 100 and the leakage current of the low leakage current cable 100 by setting the semiconductor layer 50 to cover the outer sides of the first insulation layer 30 and the second insulation layer 40, which is beneficial to improve the test accuracy.
[0049] In one embodiment, the first metal conductor 10 is used to transmit a sense signal, the second metal conductor 20 is used to transmit a force signal, and the shielding layer 60 is used to transmit a guard signal. When sense is in effect, the first metal conductor 10 and the second metal conductor 20 transmit in opposite directions. Force is used as output and sense is used for detection. When sense is not in effect, only force transmits a signal. Force can be used as an input or output signal.
[0050] The guard signal is an equipotential shielding signal of the sense signal and the force signal. The shielding layer 60 completely surrounds the first metal layer and the second metal layer to form an equipotential shielding ring to prevent leakage between different potential points.
[0051] In one embodiment, when force may need to transmit current signals and sense only transmits voltage signals, the diameter of the first metal conductor 10 is greater than the diameter of the second metal conductor 20. The first metal conductor 10 with a large diameter can reduce the resistance of the low leakage current cable 100. The internal resistance of the voltmeter is large, and the influence on the resistance of the second metal conductor 20 can be ignored. Therefore, the second metal conductor 20 can be set to a small diameter. The second metal conductor 20 with a small diameter can reduce the overall weight and cost of the low leakage current cable 100.
[0052] In other embodiments, the diameters of the first metal conductor 10 and the second metal conductor 20 may be the same, or the diameter of the first metal conductor 10 may be smaller than the diameter of the second metal conductor 20 , according to actual needs.
[0053] In some embodiments, the thickness of the first insulating layer 30 is in the range of 0.35 mm to 0.6 mm, for example, 0.35 mm, 0.4 mm, 0.5 mm, or 0.6 mm.
[0054] In some embodiments, the thickness of the second insulating layer 40 is any value between 0.35 mm and 0.6 mm, for example, 0.35 mm, 0.4 mm, 0.5 mm, or 0.6 mm.
[0055] The first insulating layer 30 can isolate the first metal conductor 10 from the external environment, preventing current loss on the first metal conductor 10. The second insulating layer 40 can isolate the second metal conductor 20 from the external environment, preventing current loss on the second metal conductor 20. Appropriate thickness of the first insulating layer 30 and the second insulating layer 40 can ensure that the low leakage current cable 100 can work normally for a long time and prevent damage from external interference and mechanical stress.
[0056] If the thickness of the first insulating layer 30 is too small, the first metal conductor 10 is easily disturbed by the outside world and easily corroded by external substances, resulting in aging and damage of the first insulating layer 30, which may cause short circuit and failure of the line, thereby affecting the safety of the low leakage current cable 100. If the thickness of the second insulating layer 40 is too small, the same applies to the first insulating layer 30.
[0057] If the thickness of the first insulating layer 30 is too large, the heat generated by the low leakage current cable 100 during long-term operation is difficult to dissipate, which may cause the temperature of the low leakage current cable 100 to continue to rise, shortening the service life of the low leakage current cable 100. When the thickness of the second insulating layer 40 is too large, the same applies to the first insulating layer 30.
[0058] Reasonable setting of the thickness of the first insulating layer 30 and the second insulating layer 40 can not only enable the first insulating layer 30 and the second insulating layer 40 to shield external interference, but also ensure normal heat dissipation of the low leakage current cable 100.
[0059] The dielectric constant reflects the ability of the medium to store electrical energy. Parasitic capacitance is a capacitance characteristic caused by the mutual capacitance between wirings. There is a direct positive correlation between the dielectric constant and parasitic capacitance of the low leakage current cable 100. The larger the dielectric constant, the larger the parasitic capacitance in the low leakage current cable 100. In materials with a larger dielectric constant, the electric field is more likely to store electrical energy in the medium, thereby increasing the possibility of parasitic capacitance.
[0060] In some embodiments, the dielectric constant of the material used for the first insulating layer 30 is any value less than 2.1Frequency 1e+6Hz, for example, 0.5Frequency 1e+6Hz, 1.0Frequency 1e+6Hz, 1.2Frequency 1e+6Hz, 1.4Frequency 1e+6Hz, 1.6Frequency 1e+6Hz, 1.8Frequency 1e+6Hz, 2.1Frequency 1e+6Hz.
[0061] In some embodiments, the dielectric constant of the material used for the second insulating layer 40 is any value less than 2.1Frequency 1e+6Hz, for example, 0.5Frequency 1e+6Hz, 1.0Frequency 1e+6Hz, 1.2Frequency 1e+6Hz, 1.4Frequency 1e+6Hz, 1.6Frequency 1e+6Hz, 1.8Frequency 1e+6Hz, 2.1Frequency 1e+6Hz.
[0062] The first insulating layer 30 and the second insulating layer 40 are made of materials with low dielectric constants, which can effectively reduce the parasitic capacitance of the low leakage current cable 100 and avoid interference of the parasitic capacitance on the test, thereby improving the electrical performance and signal transmission quality of the low leakage current cable 100 and ensuring that the low leakage current cable 100 can operate normally and be used safely.
[0063] In some embodiments, the low leakage current cable 100 further includes at least one shielding wire 80, which is disposed between the semiconductor layer 50 and the shielding layer 60 and / or between the shielding layer 60 and the third insulating layer 70, and is connected to the shielding layer 60 and to an external line.
[0064] In this way, the shielding layer 60 does not need to be directly connected to the external circuit, and the shielding wire 80 can be more conveniently connected to the external circuit than the shielding layer 60, which reduces the difficulty of connecting the low leakage current cable 100 to the external circuit and improves the convenience of using the low leakage current cable 100. The shielding signal in the shielding layer 60 is connected to the external circuit through the shielding wire 80, and the shielding signal is transmitted in the shielding layer 60 and the shielding wire 80, and the shielding wire 80 can enhance the shielding effect of the shielding layer 60.
[0065] In some embodiments, the position of the shielding wire 80 can be set according to actual needs. It can be set between the semiconductor layer 50 and the shielding layer 60, or between the shielding layer 60 and the third insulating layer 70, as long as the shielding wire 80 is connected to the shielding layer 60.
[0066] In some embodiments, there is a gap between the first insulating layer 30 and the second insulating layer 40, the semiconductor layer 50 has at least one recessed portion 51 recessed toward the gap, and the shielding line 80 is located between the recessed portion 51 and the shielding layer 60. The number of the recessed portions 51 can be set according to actual needs, for example, it can be 1, 2, 3, 4, or 5.
[0067] The first insulating layer 30 and the second insulating layer 40 are both covered by the semiconductor layer 50, and the first insulating layer 30 and the second insulating layer 40 are arranged side by side with a gap formed therebetween. The semiconductor layer 50 is recessed inward to form at least one recessed portion 51, and the recessed portion 51 is recessed toward the gap. The shielding wire 80 is located outside the recessed portion 51 and between the recessed portion 51 and the shielding layer 60. In this way, the shielding wire 80 will not make the surface of the low leakage current cable 100 locally uneven, and the surface of the low leakage current cable 100 can be ensured to be flat.
[0068] In some embodiments, the number of the recessed portions 51 and the number of the shielding wires 80 are two respectively, the two recessed portions 51 are arranged opposite to each other, and a shielding wire 80 is provided at each recessed portion 51. Here, the two recessed portions 51 are located on the perpendicular midline of the line connecting the center of the first metal conductor 10 and the center of the second metal conductor 20, which is conducive to maintaining the electric field balance inside the low leakage current cable 100 and improving the reliability and accuracy of the test of the low leakage current cable 100.
[0069] In some embodiments, the resistivity of the semiconductor material used in the semiconductor layer 50 is any value in the range of 260 kΩ / m to 280 kΩ / m. For example, it can be set to 260 kΩ / m, 265 kΩ / m, 270 kΩ / m, 275 kΩ / m, and 280 kΩ / m. Setting the resistivity of the semiconductor layer 50 within a reasonable range can ensure that the low leakage current cable 100 can efficiently and reliably transmit the test signal, and the semiconductor layer 50 can effectively balance the electric field and reduce the discharge and loss of the low leakage current cable 100.
[0070] The low leakage current cable 100 of the embodiment of the utility model can significantly reduce leakage current and parasitic capacitance by reasonably designing the internal structure and the materials between layers, so that the leakage current of the low leakage current cable 100 is lower than 1fA / m and the parasitic capacitance is lower than 10p, thereby improving the practicality of the low leakage current cable 100.
[0071] The utility model further provides a semiconductor testing device, which includes the above-mentioned low leakage current cable 100. The low leakage current cable 100 will not be described in detail here.
[0072] In the low leakage current cable 100 of the embodiment of the utility model, the first metal conductor 10 and the second metal conductor 20 are arranged in parallel. The first insulating layer 30 is coated on the outside of the first metal conductor 10, and the second insulating layer 40 is coated on the outside of the second metal conductor 20. The semiconductor layer 50 is coated on the outside of the first insulating layer 30 and the second insulating layer 40, and is used to reduce the friction current generated when the low leakage current cable 100 vibrates, so as to reduce the leakage current. The shielding layer 60 is coated on the outside of the semiconductor layer 50, and the shielding layer 60 is connected to the external line to shield the signal of the external electromagnetic field. The third insulating layer 70 is coated on the outside of the shielding layer 60 to prevent the shielding layer 60 from contacting the external environment. The above technical solution can reduce the friction current of the low leakage current cable 100 by setting the semiconductor layer 50 to be coated on the outside of the first insulating layer 30 and the second insulating layer 40, reduce the leakage current of the low leakage current cable 100, and is conducive to improving the test accuracy.
[0073] At this point, those skilled in the art should recognize that, although multiple exemplary embodiments of the present invention have been shown and described in detail herein, many other variations or modifications that conform to the principles of the present invention can still be directly determined or derived from the contents disclosed in the present invention without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be understood and recognized as covering all such other variations or modifications.
Claims
1. A low leakage current cable, characterized in that: include: A first metal conductor and a second metal conductor arranged in parallel; A first insulating layer, covering the outer side of the first metal conductor; A second insulating layer, covering the outer side of the second metal conductor; A semiconductor layer, covering the outer sides of the first insulating layer and the second insulating layer; A shielding layer, covering the outer side of the semiconductor layer, wherein the shielding layer is connected to an external circuit; The third insulating layer is coated on the outer side of the shielding layer.
2. The low leakage current cable according to claim 1, characterized in that: The thickness of the first insulating layer is in the range of 0.35 mm to 0.6 mm.
3. The low leakage current cable according to claim 2, characterized in that: The dielectric constant of the material used for the first insulating layer is any value less than 2.1Frequency 1e+6Hz.
4. The low leakage current cable according to claim 1, characterized in that: The thickness of the second insulating layer is in the range of 0.35 mm to 0.6 mm.
5. The low leakage current cable according to claim 4, characterized in that: The dielectric constant of the material used for the second insulating layer is any value less than 2.1Frequency 1e+6Hz.
6. The low leakage current cable according to claim 1, characterized in that: The low leakage current cable also includes: At least one shielding wire is disposed between the semiconductor layer and the shielding layer and / or between the shielding layer and the third insulating layer, and the shielding wire is connected to the shielding layer and to the external line.
7. The low leakage current cable according to claim 6, characterized in that: There is a gap between the first insulating layer and the second insulating layer, the semiconductor layer has at least one recessed portion recessed toward the gap, and the shielding line is located between the recessed portion and the shielding layer.
8. The low leakage current cable according to claim 7, characterized in that: The number of the recessed parts and the number of the shielding wires are two respectively, the two recessed parts are arranged opposite to each other, and one shielding wire is arranged at each recessed part.
9. The low leakage current cable according to claim 1, characterized in that: The resistivity of the semiconductor material used in the semiconductor layer is any value in the range of 260 kΩ / m to 280 kΩ / m.
10. A semiconductor testing device, characterized in that: The invention comprises the low leakage current cable as claimed in any one of claims 1 to 9.