Chemical vapor deposition equipment
By installing cleaning brushes in the corners of the process chamber of the chemical vapor deposition equipment and spraying cleaning gases with the spray unit, the problem of residual film accumulation in the corner of the equipment is solved, achieving more efficient cleaning and normal operation of the equipment.
Patent Information
- Application Number
- CN202421788899.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-26
- Publication Date
- 2025-04-25
- Estimated Expiration
- 2034-07-26
AI Technical Summary
Since plasma gas cannot be completely covered in the four corners of the process chamber of the chemical vapor deposition equipment, there are dead corners during cleaning, resulting in residual film accumulation in the corners, affecting the normal operation of the equipment.
A chemical vapor deposition device is designed, including a spray unit and a carrier seat to be arranged at intervals in the Z direction, and is installed on the side wall in conjunction with a cleaning brush. The cleaning brush is used to push the residual film at the corner to the intermediate position on the upper surface of the carrier seat, and the spray unit sprays cleaning gas for centralized processing of the residual film.
It effectively avoids the accumulation of residual film in the corners of the process chamber, ensures the normal operation of the chemical vapor deposition equipment, and improves the cleaning efficiency of the equipment.
Smart Images
Figure CN222795721U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of chemical vapor phase, in particular to a chemical vapor phase deposition device. Background Art
[0002] Chemical vapor deposition is a technique for depositing a thin solid film on a substrate surface through a chemical reaction. This technique is widely used in the semiconductor industry to manufacture a variety of thin film materials such as metals, insulators, and semiconductors. Figure 1 Combination Figure 2 As shown, the chemical vapor deposition equipment includes a process chamber 001 and a susceptor 002 located inside the process chamber.
[0003] Among them, after multiple chemical vapor depositions, there will be residual film 003 on the inner surface of the process chamber, which needs to be etched and cleaned with cleaning gases such as plasma gas. However, the four corners of the process chamber 001 cannot be completely covered by plasma gas, resulting in dead corners when cleaning the process chamber 001. Therefore, a large amount of residual film 003 will accumulate in the four corners of the process chamber 001 after a period of time, which is not conducive to the normal operation of the chemical vapor deposition equipment.
[0004] Therefore, it is urgent to provide a chemical vapor deposition device to solve the above problems. Utility Model Content
[0005] The utility model aims to provide a chemical vapor deposition device, which can clean every corner of a chemical vapor deposition chamber, avoid the accumulation of a large amount of residual film, and ensure the normal operation of the chemical vapor deposition device.
[0006] In order to achieve the above objectives, the following technical solutions are provided:
[0007] Chemical vapor deposition equipment, including:
[0008] A chemical vapor deposition chamber having a rectangular accommodating cavity, wherein the chemical vapor deposition chamber is provided with an air inlet channel;
[0009] A spray unit is disposed in the chemical vapor deposition chamber, the inlet of the air inlet channel is connected to the air supply device, and the spray unit is connected to the outlet of the air inlet channel;
[0010] A support seat is arranged in the chemical vapor deposition chamber, and the support seat and the spray unit are spaced apart along the Z direction;
[0011] A cleaning unit is arranged on the side wall of the chemical vapor deposition chamber, and the cleaning unit includes a cleaning brush, and the cleaning brush is used to push the residual film at the corner of the chemical vapor deposition chamber to the middle position of the upper surface of the supporting seat.
[0012] As an optional solution for the chemical vapor deposition equipment, the cleaning unit includes a first rotating mechanism, and the first rotating mechanism is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber. One end of the cleaning brush is transmission-connected to the first rotating mechanism for making the cleaning brush swing within a plane parallel to the supporting seat.
[0013] As an optional solution for the chemical vapor deposition equipment, the cleaning unit includes a first telescopic mechanism and a second rotating mechanism. The first telescopic mechanism is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber. The second rotating mechanism is provided at the telescopic end of the first telescopic mechanism. One end of the cleaning brush is transmission-connected to the second rotating mechanism for making the cleaning brush swing within a plane parallel to the support seat.
[0014] As an optional solution for the chemical vapor deposition equipment, the cleaning unit includes a third rotating mechanism and a second telescopic mechanism. The third rotating mechanism is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber. The fixed end of the second telescopic mechanism is connected to the third rotating mechanism, and the telescopic end of the second telescopic mechanism is connected to the cleaning brush. The cleaning brush can swing within a plane parallel to the supporting seat.
[0015] As an optional solution for the chemical vapor deposition equipment, the cleaning unit includes a third telescopic mechanism, and the third telescopic mechanism is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber. The telescopic end of the third telescopic mechanism is connected to the cleaning brush to enable the cleaning brush to move in a straight line within a plane parallel to the supporting seat.
[0016] As an optional solution of the chemical vapor deposition equipment, the chemical vapor deposition chamber is provided with an exhaust channel, and the exhaust channel is communicated with the rectangular accommodating cavity.
[0017] As an optional solution of the chemical vapor deposition equipment, the spray unit includes a spray plate, and the spray plate is provided with an interface and a plurality of injection holes that are all connected to the interface, and the interface is connected to the air inlet channel.
[0018] As an optional solution of the chemical vapor deposition equipment, a first switch valve is arranged in the air inlet channel, and a second switch valve is arranged in the air exhaust channel.
[0019] As an optional solution for the chemical vapor deposition equipment, a first filter is provided in the air inlet passage, and a second filter is provided in the air outlet passage.
[0020] As an optional solution of the chemical vapor deposition equipment, the chemical vapor deposition equipment further includes an exhaust pump, and the exhaust pump is connected to the exhaust channel.
[0021] Compared with the prior art, the utility model has the following beneficial effects:
[0022] The chemical vapor deposition equipment provided by the utility model arranges the spray unit and the supporting seat in the chemical vapor deposition chamber at intervals along the Z direction, and the cleaning gas enters the chemical vapor deposition chamber through the air inlet channel and the spray unit. By installing a cleaning brush on the side wall of the chemical vapor deposition chamber for pushing the residual film at the corner of the chemical vapor deposition chamber to the supporting seat, the residual film at the corner can be concentrated to the middle position of the upper surface of the supporting seat. The cleaning gas is sprayed toward the supporting seat through the spray unit, which is convenient for centralized processing of the residual film, avoids the accumulation of a large amount of residual film, and ensures the normal operation of the chemical vapor deposition equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.
[0024] Figure 1 It is a schematic diagram of the internal structure of the chemical vapor deposition equipment in the background technology;
[0025] Figure 2 A top view of the interior of a chemical vapor deposition device in the background technology;
[0026] Figure 3 This is a schematic diagram of the internal structure of the chemical vapor deposition equipment in the embodiment of the utility model;
[0027] Figure 4 A top view of a spray unit in an embodiment of the utility model;
[0028] Figure 5 This is a schematic diagram of the structure of the first cleaning unit in the embodiment of the utility model;
[0029] Figure 6 This is a schematic diagram of the structure of the second cleaning unit in the embodiment of the utility model;
[0030] Figure 7 This is a schematic structural diagram of a third cleaning unit in an embodiment of the utility model;
[0031] Figure 8 It is a schematic structural diagram of the fourth cleaning unit in the embodiment of the utility model.
[0032] Reference numerals:
[0033] 001, process chamber; 002, base; 003, residual film;
[0034] 1. Chemical vapor deposition chamber; 2. Spray unit; 3. Support seat; 31. Heating module; 4. Cleaning unit; 5. Air pump; 6. Air supply device;
[0035] 11. rectangular accommodating chamber; 12. air inlet channel; 121. first switch valve; 122. first filter; 13. exhaust channel; 131. second switch valve; 132. second filter;
[0036] 21. spray plate; 211. spray hole;
[0037] 41. Cleaning brush; 42. First rotating mechanism; 43. First telescopic mechanism; 44. Second rotating mechanism; 45. Third rotating mechanism; 46. Second telescopic mechanism; 47. Third telescopic mechanism. DETAILED DESCRIPTION
[0038] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.
[0039] In the description of the present utility model, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use. They are only for the convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.
[0040] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0041] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.
[0042] In order to clean every corner of the chemical vapor deposition chamber, avoid the accumulation of a large amount of residual film, and ensure the normal operation of the chemical vapor deposition equipment, this embodiment provides a chemical vapor deposition equipment, which is combined with Figures 3 to 8 The specific contents of this embodiment are described in detail.
[0043] like Figure 3 As shown, the chemical vapor deposition equipment in this embodiment includes a chemical vapor deposition chamber 1 (also referred to as a process chamber), a spray unit 2, a support seat 3 and a cleaning unit 4. The chemical vapor deposition chamber 1 has a rectangular accommodating cavity 11, and an air inlet channel 12 is provided on the top wall of the chemical vapor deposition chamber 1. The spray unit 2 is arranged in the chemical vapor deposition chamber 1, the inlet of the air inlet channel 12 is connected to the air supply device 6, and the spray unit 2 is connected to the outlet of the air inlet channel 12. The support seat 3 is arranged in the chemical vapor deposition chamber 1, and the support seat 3 and the spray unit 2 are spaced apart in the Z direction. The cleaning unit 4 is arranged on the inner side wall of the rectangular accommodating cavity 11, and the cleaning unit 4 is located above the support seat 3. The cleaning unit 4 includes a cleaning brush 41, and the cleaning brush 41 is used to push the residual film 003 at the corner of the chemical vapor deposition chamber 1 to the middle position of the upper surface of the support seat 3.
[0044] Exemplarily, the spray unit 2 is located directly above the support seat 3, and the gas sprayed by the spray unit 2 can directly act on the residual film 003 on the support seat 3. Optionally, the support seat 3 is provided with a heating module 31.
[0045] The chemical vapor deposition equipment provided in this embodiment arranges the spray unit 2 and the support seat 3 in the chemical vapor deposition chamber 1 at intervals along the Z direction, and the cleaning gas enters the chemical vapor deposition chamber 1 through the air inlet channel 12 and the spray unit 2 in sequence. By installing a cleaning brush 41 on the side wall of the chemical vapor deposition chamber 1 for pushing the residual film 003 at the corner of the chemical vapor deposition chamber 1 to the support seat 3, the residual film 003 at the corner can be concentrated to the middle position of the upper surface of the support seat 3, and the cleaning gas is sprayed toward the support seat 3 through the spray unit 2, which is convenient for centralized processing of the residual film 003, avoiding the accumulation of a large amount of residual film 003, and ensuring the normal operation of the chemical vapor deposition equipment.
[0046] Alternatively, if Figure 3 Combination Figure 5As shown, the cleaning unit 4 includes a first rotating mechanism 42. The first rotating mechanism 42 is arranged along the Z direction at the adjacent side walls at the corners of the chemical vapor deposition chamber 1. One end of the cleaning brush 41 is connected to the first rotating mechanism 42 in a transmission manner, so as to make the cleaning brush 41 swing within a plane parallel to the support seat 3, and the other end of the cleaning brush 41 can reach the corner where the residual film 003 is located. Two swinging cleaning brushes 41 are arranged at each corner of the chemical vapor deposition chamber 1, similar to the principle of a windshield wiper, to push the residual film 003 at the corner to the middle position of the upper surface of the support seat 3, so as to facilitate the reaction between the cleaning gas and the residual film 003.
[0047] like Figure 3 Combination Figure 6 As shown, the cleaning unit 4 includes a first telescopic mechanism 43 and a second rotating mechanism 44 arranged along the Z direction. The first telescopic mechanism 43 is arranged at the adjacent side walls at the corners of the chemical vapor deposition chamber 1. The second rotating mechanism 44 is arranged at the telescopic end of the first telescopic mechanism 43. One end of the cleaning brush 41 is connected to the second rotating mechanism 44 in a transmission manner, so as to make the cleaning brush 41 swing within a plane parallel to the supporting seat 3. By adding the first telescopic mechanism 43 and the second rotating mechanism 44, the cleaning brush 41 can not only swing and push the residual film 003 along an arc, but also push the residual film 003 along a straight line, thereby expanding the cleaning range of the cleaning brush 41.
[0048] like Figure 3 Combination Figure 7 As shown, the cleaning unit 4 includes a third rotating mechanism 45 and a second telescopic mechanism 46. The third rotating mechanism 45 is arranged at the adjacent side walls at the corners of the chemical vapor deposition chamber 1 along the Z direction. The fixed end of the second telescopic mechanism 46 is connected to the third rotating mechanism 45. The telescopic end of the second telescopic mechanism 46 is connected to the cleaning brush 41. The cleaning brush 41 can swing within a plane parallel to the support seat 3. By adding the third rotating mechanism 45, the cleaning brush 41 can be pushed along the arc. Since the second telescopic mechanism 46 is arranged between the third rotating mechanism 45 and the cleaning brush 41, the length of the second telescopic mechanism 46 can be adjusted according to actual conditions, so as to change the size of the cleaning area of the cleaning brush 41.
[0049] like Figure 3 Combination Figure 8 As shown, the cleaning unit 4 includes a third telescopic mechanism 47, and the third telescopic mechanism 47 is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber 1, and the telescopic end of the third telescopic mechanism 47 is connected to the cleaning brush 41, which is used to make the cleaning brush 41 move in a straight line within a plane parallel to the support seat 3. By adding the third telescopic mechanism 47, the cleaning brush 41 can push and clean the residual film 003 at the corner along the upper surface of the support seat 3, so as to facilitate the residual film 003 to be concentrated at the middle position of the upper surface of the support seat 3.
[0050] Furthermore, if Figure 3 As shown, an exhaust channel 13 is provided at the bottom of the chemical vapor deposition chamber 1 , and the exhaust channel 13 is connected to the rectangular accommodating cavity 11 , so as to quickly exhaust the remaining cleaning gas from the chemical vapor deposition chamber 1 .
[0051] Furthermore, if Figure 3 Combination Figure 4 As shown, the spray unit 2 includes a spray plate 21, on which an interface and a plurality of spray holes 211 are provided, each of which is connected to the interface, and the interface is connected to the air inlet channel 12. By evenly arranging the spray holes 211 at the bottom of the spray plate 21, it is convenient to evenly spray the cleaning gas.
[0052] Furthermore, if Figure 3 As shown, a first switch valve 121 is provided in the intake passage 12, and a second switch valve 131 is provided in the exhaust passage 13. By adding the first switch valve 121 and the second switch valve 131, it is convenient to control the opening or closing of the intake passage 12 and the exhaust passage 13.
[0053] Furthermore, a first filter 122 is provided in the air inlet passage 12, and a second filter 132 is provided in the air outlet passage 13. By adding the first filter 122 and the second filter 132, it is convenient to filter particles in the air and prevent particles from entering the chemical vapor deposition chamber 1.
[0054] Exemplarily, the chemical vapor deposition apparatus further includes an air pump 5, which is connected to the exhaust channel 13. By adding the air pump 5 to extract the gas in the exhaust channel 13, it is convenient to speed up the flow rate of the gas inside the chemical vapor deposition chamber 1 and speed up the elimination of the residual film 003.
[0055] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention is described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims
1. Chemical vapor deposition equipment, characterized in that include: The chemical vapor deposition chamber has a rectangular accommodating cavity and is provided with an air inlet channel. A spray unit is disposed in the chemical vapor deposition chamber, the inlet of the air inlet channel is connected to the air supply device, and the spray unit is connected to the outlet of the air inlet channel; A support seat is arranged in the chemical vapor deposition chamber, and the support seat and the spray unit are spaced apart along the Z direction; A cleaning unit is arranged on the side wall of the chemical vapor deposition chamber, and the cleaning unit includes a cleaning brush, and the cleaning brush is used to push the residual film at the corner of the chemical vapor deposition chamber to the middle position of the upper surface of the supporting seat.
2. The chemical vapor deposition equipment according to claim 1, characterized in that: The cleaning unit includes a first rotating mechanism, and the first rotating mechanism is arranged at the adjacent side walls at the corners of the chemical vapor deposition chamber. One end of the cleaning brush is transmission-connected to the first rotating mechanism to make the cleaning brush swing within a plane parallel to the supporting seat.
3. The chemical vapor deposition equipment according to claim 1, characterized in that: The cleaning unit includes a first telescopic mechanism and a second rotating mechanism. The first telescopic mechanism is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber. The second rotating mechanism is provided at the telescopic end of the first telescopic mechanism. One end of the cleaning brush is transmission-connected to the second rotating mechanism for making the cleaning brush swing within a plane parallel to the supporting seat.
4. The chemical vapor deposition equipment according to claim 1, characterized in that: The cleaning unit includes a third rotating mechanism and a second telescopic mechanism. The third rotating mechanism is provided at the adjacent side walls at the corners of the chemical vapor deposition chamber. The fixed end of the second telescopic mechanism is connected to the third rotating mechanism. The telescopic end of the second telescopic mechanism is connected to the cleaning brush. The cleaning brush can swing within a plane parallel to the supporting seat.
5. The chemical vapor deposition equipment according to claim 1, characterized in that: The cleaning unit includes a third telescopic mechanism, and the third telescopic mechanism is arranged at the adjacent side walls at the corners of the chemical vapor deposition chamber. The telescopic end of the third telescopic mechanism is connected to the cleaning brush to enable the cleaning brush to move in a straight line within a plane parallel to the supporting seat.
6. The chemical vapor deposition device according to any one of claims 1 to 5, characterized in that: The chemical vapor deposition chamber is provided with an exhaust channel, and the exhaust channel is communicated with the rectangular accommodating cavity.
7. The chemical vapor deposition equipment according to claim 6, characterized in that: The spray unit comprises a spray plate, on which an interface and a plurality of spray holes which are all in communication with the interface are arranged, and the interface is in communication with the air inlet passage.
8. The chemical vapor deposition equipment according to claim 6, characterized in that: A first switch valve is arranged in the intake passage, and a second switch valve is arranged in the exhaust passage.
9. The chemical vapor deposition equipment according to claim 6, characterized in that: A first filter is arranged in the air intake passage, and a second filter is arranged in the air exhaust passage.
10. The chemical vapor deposition equipment according to claim 6, characterized in that: The chemical vapor deposition equipment further includes an exhaust pump, which is communicated with the exhaust channel.