Compact optical fiber coupling semiconductor device

Abstract

The utility model relates to a compact optical fiber coupling semiconductor device which comprises a shell provided with a containing groove, at least two rows of COS chips with different heights are installed in the containing groove, heat dissipation channels with different heights are arranged in the shell, and the heat dissipation channels are correspondingly arranged under the COS chips in each row. According to the utility model, the semiconductor laser system can realize super-power output, has the characteristics of compact and simple structure, good heat dissipation, good reliability and long service life, and is conveniently applied to a high-power fiber laser to be used as a pumping source.

Description

Technical Field

[0001] The present application relates to the technical field of optical fiber lasers, and in particular to a compact optical fiber-coupled semiconductor device. Background Art

[0002] Semiconductor multi-tube fiber-coupled lasers are often used as pump sources for high-power fiber lasers. In recent years, the power of fiber lasers has expanded to the 100,000-watt level, and the power and heat dissipation requirements for pump sources are becoming increasingly higher. The power of semiconductor pump sources has increased from tens of watts to 4,000 W, which poses greater challenges to the size and heat dissipation of semiconductor multi-tube fiber-coupled lasers.

[0003] High-power semiconductor multi-single-tube fiber-coupled lasers are composed of multiple single tubes that are focused into the optical fiber after fast and slow axis collimation, spatial beam combining, polarization beam combining, and wavelength beam combining. Each single-tube chip often uses COS (Chip on Substrate). After welding a single COS to a unit heat sink, it is installed on the bottom plate heat sink for heat dissipation. At present, the power of a single chip has reached 60W. Reasonable heat dissipation is conducive to extending the life of the semiconductor laser and ensuring the stability of the output power. With the development of single-tube chip technology in recent years, the power of a single single-tube chip has increased year by year, and the heat generated during operation is also increasing. In order to effectively ensure the life of high-power semiconductor lasers and the stability of the output power, a reasonable heat dissipation structure should be designed to ensure the heat dissipation of a single tube.

[0004] At present, semiconductor multi-single-tube fiber-coupled lasers mostly adopt a single-tube step arrangement. The COS of the step arrangement is not at the same distance from the bottom heat dissipation, and the heat dissipation of each chip is uneven. In addition, the heat dissipation at the bottom of the module is often dissipated by indirect water cooling, which will affect the life and power output of the single-tube chip, which will limit the acquisition of ultra-high power pump sources with higher power and smaller volume. Utility Model Content

[0005] The purpose of the present application is to provide a compact fiber-coupled semiconductor device, which enables the semiconductor laser system to achieve ultra-high power output, and has the characteristics of compact structure, simplicity, good heat dissipation, good reliability and long life, and is easy to be used as a pump source in high-power fiber lasers.

[0006] In order to achieve the above-mentioned purpose, the utility model provides a compact fiber-coupled semiconductor device, including a shell provided with a receiving groove, in which at least two rows of COS chips of different heights are installed, and heat dissipation channels of different heights are arranged inside the shell, and the heat dissipation channels are correspondingly arranged directly below each row of the COS chips.

[0007] In an optional embodiment, the heat dissipation channel includes a plurality of channels with different heights, and the welding positions of each row of the COS chips are spaced at the same height as each of the heat dissipation channels.

[0008] In an optional embodiment, a plurality of the heat dissipation channels are interconnected, and an extension direction of each of the heat dissipation channels is parallel to a direction in which each row of the COS chips is arranged in a row.

[0009] In an optional embodiment, a plurality of the COS chips in the same row are arranged at intervals, the adjacently arranged COS chips are arranged alternately in the row arrangement direction, and the laser emission direction of the COS chips in each row is the same.

[0010] In an optional embodiment, the groove cavity of the receiving groove is provided with steps, and the multiple rows of COS chips are respectively distributed on the steps in high and low positions.

[0011] In an optional embodiment, the COS chips are arranged in two rows, including a first arrangement chip and a second arrangement chip with high and low distributions, respectively. The two rows of COS chips are arranged on the same side of the receiving groove, and an optical component is arranged on the other side of the receiving groove. The first arrangement chip is installed on the step, and the second arrangement chip is installed on the bottom plane of the receiving groove.

[0012] In an optional embodiment, the optical component includes a first slow-axis collimator, a second slow-axis collimator, a first small reflector and a second small reflector arranged in rows, respectively, and the first slow-axis collimator and the second slow-axis collimator as well as the second slow-axis collimator and the second small reflector are distributed in high and low directions and are staggered in the layout direction.

[0013] In an optional embodiment, the first slow-axis collimator is mounted on a collimator base, the first small reflector is mounted on the step, and the second slow-axis collimator and the second small reflector are mounted on a bottom plane of the accommodating groove.

[0014] In an optional embodiment, the reflective mirror surfaces of the first small reflector and the second small reflector are both tilted upward, and the tilt elevation angles of all the small reflectors are the same.

[0015] In an optional embodiment, the optical component further includes a first large reflector and a second large reflector, each used to reflect the reflected light beam of the small reflector to the polarization combiner;

[0016] The first large reflector is provided singly, and the second large reflector comprises a primary large reflector and a secondary large reflector. The reflective mirror surface of the primary large reflector is tilted upward, and the reflective mirror surface of the secondary large reflector is tilted downward.

[0017] By installing at least two rows of COS chips of different heights in the housing groove, the compactness of the overall structure of the semiconductor laser can be enhanced. At the same time, the COS chip is directly mounted on the housing without indirect heat sink welding and without the need for installation through a unit heat sink.

[0018] Combined with the heat dissipation channels set inside the shell, and the heat dissipation channels are set directly under each row of COS chips, the cold medium input into the heat dissipation channels can directly dissipate the heat of the COS chips. Compared with the traditional heat sink structure, the heat dissipation effect of the COS chips can be greatly improved to ensure the stability of its operation.

[0019] Other features and advantages of the present application will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is a schematic diagram of the structure of a compact fiber-coupled semiconductor device in this application;

[0022] Figure 2 for Figure 1 A schematic diagram of a top view structure;

[0023] Figure 3 It is a structural schematic diagram of the tube shell;

[0024] Figure 4 It is a structural schematic diagram of the heat dissipation channel.

[0025] icon:

[0026] 1-housing; 11-accommodating groove; 12-stair step; 13-collimating mirror base;

[0027] 2- Heat dissipation channel;

[0028] 3-first array chip; 31-first slow axis collimator; 32-first small reflector; 33-first large reflector;

[0029] 4-second array chip; 41-second slow axis collimator; 42-second small reflector; 43-second large reflector; 43a-primary large reflector; 43b-secondary large reflector;

[0030] 5-Polarization combiner. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0032] In the description of this application, it should be noted that the terms "inside", "outside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed when in use, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0033] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0034] See also Figure 1-Figure 4 The compact fiber-coupled semiconductor device in the present application, specifically a semiconductor laser, mainly improves the compactness of the COS chip during arrangement by changing the mounting structure of the COS chip on the housing 1 .

[0035] Meanwhile, by directly welding the COS chip on the housing 1 and providing a heat dissipation channel 2 inside the housing 1 , the heat dissipation performance of the COS chip can be enhanced, forming a more reasonable heat dissipation structure of the COS chip.

[0036] The compact fiber-coupled semiconductor device of the utility model comprises a housing 1 provided with a receiving groove 11, wherein at least two rows of COS chips of different heights are installed in the receiving groove 11, and heat dissipation channels 2 of different heights are arranged inside the housing 1, and the heat dissipation channels 2 are correspondingly arranged directly below each row of the COS chips.

[0037] Specifically, the COS chip includes two rows, and the two rows of COS chips of different heights are directly mounted on the shell 1. The stepped steps 12 of the shell 1 are formed by machining the accommodating groove 11 of the shell 1. The stepped steps 12 are structures formed by machining the shell 1 body, which are essentially different from the existing traditional indirect heat sinks.

[0038] By arranging heat dissipation channels 2 of different heights inside the housing 1, the housing 1 can be optimized into a tube shell form, so that the COS chip can be directly welded on the tube shell.

[0039] By directly welding and mounting the COS chip on the tube shell, and arranging the heat dissipation channel 2 correspondingly directly below each row of COS chips, a structure for directly dissipating heat for the COS chip can be formed.

[0040] Compared with the existing heat sink plates and indirect heat sink plates, the configuration structure of the heat dissipation channel 2 in the present application can greatly improve the heat dissipation effect of the COS chip and ensure the effective formation of a reasonable heat dissipation structure.

[0041] Regarding the correspondence between the heat dissipation channel 2 and the COS chip, in one specific embodiment, the heat dissipation channel 2 includes multiple channels with different heights. Based on the setting of two rows of COS chips, in the specific structure, the heat dissipation channel 2 includes two channels with different heights, and the welding positions of the two rows of COS chips are the same as the height spacing of the two heat dissipation channels 2.

[0042] Through this arrangement, combined with direct welding of the COS chip on the tube shell, the heat dissipation effect of each COS chip in the semiconductor laser can be made the same, so that each COS chip can obtain the same uniform and equally effective heat dissipation, thereby achieving more reasonable heat dissipation, realizing good heat dissipation of the semiconductor laser as a whole, extending the service life of the laser, and ensuring the stable output of high-power semiconductor lasers.

[0043] Based on the setting of different heights of the heat dissipation channel 2 and promoting the flow of refrigerant in the heat dissipation channel 2, the two heat dissipation channels 2 are interconnected, and the extension direction of each heat dissipation channel 2 is parallel to the arrangement direction of each row of COS chips, so that the refrigerant medium flowing in the heat dissipation channel 2 can effectively dissipate the COS chips.

[0044] On the basis of setting two rows of COS chips with different heights, the laser emission direction of each row of COS chips is the same, so that multiple rows of COS chips are centrally placed to output light in the same direction.

[0045] With this arrangement, COS chips can be arranged in a concentrated row on one side of the receiving groove 11, and optical components for collimating and reflecting the output light beam can be arranged in a concentrated row on the other side of the receiving groove 11, which can help enhance the concentration and compactness of the COS chip arrangement.

[0046] In this embodiment, a plurality of COS chips in each row of COS chips are arranged at intervals, and adjacently arranged COS chips are arranged alternately in the row arrangement direction, so as to achieve a technical effect that the output light beams do not affect each other.

[0047] At the same time, in the staggered arrangement, the interval between COS chips in the same row only needs to be equal to the width of the COS chip itself, which can achieve a more compact arrangement of the COS chips.

[0048] The groove cavity of the receiving groove 11 is provided with a step 12, and multiple rows of COS chips are respectively distributed at different heights on the step 12. Based on the above-mentioned structure that the step 12 and the tube shell are processed as one piece, combined with the specific setting of two rows of COS chips in this embodiment, one row of COS chips is directly installed on the bottom of the receiving groove 11, and the other row of COS chips is installed on the machined step 12. When more than three rows of COS chips are provided, more steps 12 can be machined to meet the specific installation requirements of the COS chips, but it should be limited to the step 12 being part of the tube shell structure itself, which is conducive to uniform and equivalent heat dissipation of COS chips arranged at different heights directly through heat dissipation channels 2 at different heights.

[0049] Based on the above description, in order to more clearly illustrate the arrangement of the COS chips, the two rows of COS chips in this embodiment respectively include a first arrangement chip 3 and a second arrangement chip 4 with high and low distributions. The first arrangement chip 3 is welded on the step 12, and the second arrangement chip 4 is welded on the bottom plane of the accommodating groove in the tube shell.

[0050] Two rows of COS chips are arranged on the same side of the receiving groove 11 , and adjacent COS chips in the same row are located at the same height. No height step structure is set for COS chips in the same row. Two sets of optical components corresponding to the two rows of COS chips are arranged on the other side of the receiving groove 11 .

[0051] Furthermore, the two sets of optical components include a first slow-axis collimator mirror 31 , a second slow-axis collimator mirror 41 , a first small reflecting mirror 32 , and a second small reflecting mirror 42 , which are arranged in a row respectively.

[0052] It should be pointed out that the fast axis collimator is directly mounted on the side of the COS chip, and is not arranged in a row separately. The fast axis collimator is directly mounted following the COS chip.

[0053] The first slow axis collimator 31 and the first small reflector 32 correspond to the first array chip 3 and are both located at the high installation position, and the second slow axis collimator 41 and the second small reflector 42 correspond to the second array chip 4 and are both located at the low installation position.

[0054] Based on the above correspondence, combined with the spacing of multiple COS chips in each row, and the staggered arrangement of adjacently arranged COS chips in the row arrangement direction, correspondingly, the first slow-axis collimator 31 and the second slow-axis collimator 41 are distributed in high and low positions and staggered in the arrangement direction.

[0055] Likewise, the second slow-axis collimating mirror 41 and the second small reflecting mirror 42 are arranged in different heights and staggered in the layout direction.

[0056] Through the above correspondence, the lasers output by the two rows of COS chips can be collimated and reflected without affecting each other. At the same time, the module size can be effectively reduced, the space can be effectively utilized, the size of the semiconductor laser can be reduced, and the compactness of the structural layout can be guaranteed to the greatest extent.

[0057] Furthermore, a collimator base 13 is provided in the accommodating groove 11 for raising the height of the low-position slow-axis collimator. The first slow-axis collimator 31 is installed on the collimator base 13. At the bottom of the accommodating groove, in addition to the step 12 for installing the COS chip, there are also step 12 for raising the installation height of the small reflector. The first small reflector 32 is installed on the step 12.

[0058] From the perspective of low-position installation and to make the structure more compact, the second slow-axis collimator 41 and the second small reflector 42 are directly installed on the bottom plane of the receiving groove 11 .

[0059] Based on the stepless structure of adjacent COS chips in the same row, after the laser is output, the outgoing light of the COS chips in the same row can be reflected in a spatial beam arrangement by adjusting the pitch angle of the small reflector, which effectively reduces the weight of the module. Specifically, the reflective mirror surfaces of the first small reflector 32 and the second small reflector 42 are both tilted upward, and the tilt angles of all small reflectors are the same.

[0060] The mechanism for setting the mirror surface to tilt upward is that, due to the arrangement of the COS chips in rows at different distances and the same tilt angle of the mirror surface of the small reflector, an array of light beams that are parallel to each other but at different heights and transmitted at an angle will be formed in the height direction of the optical path transmission.

[0061] In addition, the spacing between adjacent light beams can be adjusted by adjusting the tilt angle.

[0062] Based on the distribution of the two rows of small reflectors, two groups of mutually parallel array light beams with different heights and inclined transmission can be formed, and then reflected by the large reflector and reflected to the deflection combiner to realize deflection beam combining.

[0063] From the perspective of the array light beam being reflected again, the optical component further includes a first large reflector 33 and a second large reflector 43 , which are respectively used to reflect the reflected light beams of the small reflectors to the polarization combiner 5 .

[0064] In the process of polarization beam combining, the light beams of the two rows of COS chips need to be incident at the same height. Combined with the difference in height between the first-arrangement chip 3 and the second-arrangement chip 4, and the matching setting of the corresponding optical components, since the first-arrangement chip 3 and its matching optical components are in a high position, the corresponding high-position reflection array light beam after passing through the first small reflector 32 can be directly reflected. Therefore, the first large reflector 33 only needs to be set as a large reflector for reflection and deflection.

[0065] Since the second array chip 4 and its matching optical components are in a low position, the low-position reflection array light beam after passing through the second small reflector 42 must first be lifted and reflected, and then pressed down and reflected to adjust it to the same height as the incident light beam of the first large reflector 33.

[0066] Based on this, the second large reflector 43 includes a primary large reflector 43a and a secondary large reflector 43b, wherein the reflector surface of the primary large reflector 43a is tilted upward, and the reflector surface of the secondary large reflector 43b is tilted downward. By adjusting the pitch angles of the reflector surfaces of the two large reflectors, the adjustment of the reflected array beam is achieved.

[0067] In the compact fiber-coupled semiconductor device of the utility model, the semiconductor single tube is packaged into a COS chip and then welded to the tube shell. The laser emitted by the first array chip 3 is collimated by the fast axis collimator and the first slow axis collimator 31, and then reflected by the first small reflector 32 to achieve the spatial arrangement and distribution of the light beams of the COS chips in the same row. Similarly, the laser emitted by the second array chip 4 is collimated by the fast axis collimator and the second slow axis collimator 41, and then reflected by the second small reflector 42 to achieve the spatial arrangement and distribution of the light beams of the COS chips in the same row.

[0068] After the spatially arranged light beam corresponding to the first arrangement chip 3 is reflected by the first large reflector 33 , the spatially arranged light beam is incident on the polarization combiner 5 parallel to the bottom wall of the tube shell.

[0069] By adjusting the pitch angles of the primary large reflector 43a and the secondary large reflector 43b, and the yaw direction of the second large reflector 43, the spatially arranged light beam corresponding to the second arrangement chip 4 is output parallel to the bottom wall of the tube shell and has the same height as the spatially arranged light beam corresponding to the first arrangement chip 3. Finally, two groups of arranged light beams with the same height are polarized and combined by the polarization combiner 5 and then focused by the focusing lens into the optical fiber.

[0070] The compact optical fiber coupled semiconductor device of the utility model has the following advantages:

[0071] 1. Good heat dissipation. The COS chip does not need an indirect heat sink and is directly welded on the welding area of ​​the tube shell. The first-arrangement chip and the second-arrangement chip are both flat and stepless structures with simple structures. A heat dissipation channel is set at the bottom of the COS chip. The heat dissipation of the semiconductor laser is achieved through multiple heat dissipation channels at the bottom of the tube shell, which can effectively achieve the heat dissipation of the COS chip.

[0072] 2. The compact structure is conducive to the arrangement of multiple single tubes and the stable output of high-power fiber-coupled modules. COS chips are distributed in multiple rows front and back, and the output light is placed in the same direction. The interval between COS chips in the same row only needs to be equal to the width of the COS chip itself, which can achieve a more compact arrangement of COS chips;

[0073] 3. It is conducive to reducing the volume of the module. The corresponding slow-axis collimator and small reflector inside the tube shell are arranged at intervals, which effectively reduces the volume of the module, can effectively utilize the space, and reduce the volume of the semiconductor laser;

[0074] 4. There is no step structure for adjacent COS chips in the same row. By adjusting the upward angle of the reflective mirror of the small reflector, the emitted light of the COS chips in the same row can be spatially combined and arranged, which effectively reduces the weight of the module.

[0075] 5. Reduce the insertion loss of the optical path and the number of lenses used. There is no need to add a height-raising prism. Only a large reflector is used to reflect two groups of spatially combined light beams with different heights, and the same height is incident on the polarization combiner to achieve polarization combining.

[0076] It should be noted that, in the absence of conflict, the features in the embodiments of this application may be combined with each other.

[0077] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A compact fiber-coupled semiconductor device, characterized in that: It comprises a shell with a receiving groove, in which at least two rows of COS chips with different heights are installed, and heat dissipation channels with different heights are arranged inside the shell, and the heat dissipation channels are correspondingly arranged directly below each row of COS chips.

2. The compact fiber-coupled semiconductor device according to claim 1, characterized in that: The heat dissipation channel includes a plurality of channels with different heights, and the welding positions of each row of the COS chips are spaced at the same height as each of the heat dissipation channels.

3. The compact fiber-coupled semiconductor device according to claim 2, characterized in that: The plurality of heat dissipation channels are interconnected, and the extending direction of each heat dissipation channel is parallel to the arrangement direction of each row of COS chips.

4. The compact fiber-coupled semiconductor device according to claim 1, characterized in that: A plurality of COS chips in the same row are arranged at intervals, and the adjacently arranged COS chips are arranged alternately in the row arrangement direction, and the laser emission direction of the COS chips in each row is the same.

5. The compact fiber-coupled semiconductor device according to claim 1, characterized in that: The groove cavity of the receiving groove is provided with steps, and the multiple rows of COS chips are respectively distributed in high and low positions on the steps.

6. The compact fiber-coupled semiconductor device according to claim 5, characterized in that: The COS chips are arranged in two rows, including a first arrangement chip and a second arrangement chip of high and low distribution respectively. The two rows of COS chips are arranged on the same side of the receiving groove. An optical component is arranged on the other side of the receiving groove. The first arrangement chip is installed on the step, and the second arrangement chip is installed on the bottom plane of the receiving groove.

7. The compact fiber-coupled semiconductor device according to claim 6, characterized in that: The optical component includes a first slow-axis collimator, a second slow-axis collimator, a first small reflector and a second small reflector arranged in rows respectively. The first slow-axis collimator and the second slow-axis collimator and the second slow-axis collimator and the second small reflector are distributed in high and low positions and are staggered in the layout direction.

8. The compact fiber-coupled semiconductor device according to claim 7, characterized in that: The first slow-axis collimator is mounted on a collimator base, the first small reflector is mounted on the step, and the second slow-axis collimator and the second small reflector are mounted on a bottom plane of the accommodating groove.

9. The compact fiber-coupled semiconductor device according to claim 7, characterized in that: The reflecting mirror surfaces of the first small reflecting mirror and the second small reflecting mirror are both tilted upward, and the tilting elevation angles of all the small reflecting mirrors are the same.

10. The compact fiber-coupled semiconductor device according to claim 7, characterized in that: The optical assembly further includes a first large reflector and a second large reflector, which are respectively used to reflect the reflected light beam of the small reflector to the polarization combiner; The first large reflector is provided singly, and the second large reflector comprises a primary large reflector and a secondary large reflector. The reflective mirror surface of the primary large reflector is tilted upward, and the reflective mirror surface of the secondary large reflector is tilted downward.

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