Antireflection film

By alternately setting the structure of a high refractive index film layer and a dielectric material film layer on the aluminum alloy substrate, the problem of high reflectivity of aluminum alloy materials is solved, and the reflectivity is reduced to less than 4%, meeting the requirements of the etalon, and improving the bonding force between the film layer and the substrate.

CN222812957UActive Publication Date: 2025-04-29DONGGUAN YUTONG OPTICAL TECH
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Patent Information

Application Number
CN202421719404.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-18
Publication Date
2025-04-29
Estimated Expiration
2034-07-18

AI Technical Summary

Technical Problem

The high reflectivity of aluminum alloy materials leads to a decrease in the generation of stubborn light and measurement accuracy in optical systems, and an absorption film that can reduce the reflectivity is needed.

Method used

The film layer structure of 2 to 5 sets of alternately arranged high-refractive index film layers and dielectric material film layers is adopted. The first layer close to the surface of the substrate is a high-refractive index film layer, and the outermost layer close to the air interface is a dielectric material film layer, and the optical thicknesses between adjacent film layers are different.

Benefits of technology

The reflectivity of the aluminum alloy substrate is effectively reduced to less than 4%, meeting the requirements of etalons, and improving the bonding force between the film layer and the substrate, ensuring adhesion and reliability.

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Abstract

The utility model provides an antireflection film. The film layer structure of the antireflection film comprises 2-5 groups of high refractive index film layers and dielectric material film layers which are alternately arranged from the substrate to the outside; in the film layer structure, the first layer close to the surface of the substrate is a high-refractive-index film layer, and the outermost layer close to an air interface is a dielectric material film layer; and the optical thicknesses of the adjacent film layers are different. The antireflection film provided by the utility model has the advantages of simple structure, thin film thickness and few layers, and can reduce the reflectivity of the aluminum alloy substrate to below 4% to meet the requirement of an etalon.
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Description

Technical Field

[0001] The utility model belongs to the technical field of optical films, and in particular relates to an anti-reflection film. Background Art

[0002] Aluminum alloy refers to an alloy made of aluminum as the main component through alloy casting or continuous casting. It has excellent properties such as light weight, low density, and high strength, making it a widely used type of metal material on the market. Aluminum alloy has a wide range of uses. For example, it can be used to manufacture aviation equipment, ships, automobiles, machine tool metal parts, military equipment and engineering machinery, and can also be used to manufacture some daily necessities such as kitchen utensils, communication equipment, etc. Aluminum alloy materials themselves are light in weight, high in strength, and not easy to deform. Many standard tools of testing instruments are processed with aluminum alloy materials.

[0003] At present, the reflectivity of aluminum alloy materials is 80-91%. However, when the reflectivity of an etalon made of aluminum alloy materials is high, when light is incident on the surface of the etalon, the intensity of the reflected light is relatively high, which will cause two problems: first, the relatively high reflected light beam will cause stray light in the optical system; second, the relatively high reflectivity will cause interference between the reflected light beam and the incident light beam, which will lead to a decrease in measurement accuracy. Therefore, the use of etalons made of aluminum alloy materials requires low reflectivity. To meet this requirement, it is necessary to prepare an absorption film that reduces the reflectivity.

[0004] CN 207233746U discloses a solar cell anti-reflection film, which comprises a first film layer formed on a silicon wafer surface, a second film layer formed on the first film layer, and a third film layer formed on the second film layer, wherein the refractive index of the first film layer is 2.15-2.4, the refractive index of the third film layer is 1.9-2.15, and the refractive index of the third film layer is less than the refractive index of the first film layer, and the refractive index of the second film layer gradually decreases from the side where the first film layer is located to the side where the third film layer is located. The disclosed anti-reflection film reduces the emission phenomenon of light in the interface layer by setting the second film layer to a gradual refractive index, improves the utilization rate of incident light, and can improve the photoelectric conversion efficiency of the solar cell by more than 0.05%.

[0005] In summary, it is necessary to provide an anti-reflection film with fewer layers and thinner film layers to reduce the reflectivity to below 4% to meet product requirements. Utility Model Content

[0006] In view of the shortcomings of the prior art, the utility model aims to provide an anti-reflection film having a simple structure, thin film thickness, and few layers, and can reduce the reflectivity of the aluminum alloy substrate to below 4%, meeting the requirements of the etalon.

[0007] To achieve this purpose, the utility model adopts the following technical solutions:

[0008] The utility model provides an anti-reflection film, wherein the film layer structure of the anti-reflection film comprises, from a substrate outward, 2 to 5 groups of high refractive index film layers and dielectric material film layers which are alternately arranged;

[0009] In the film layer structure, the first layer close to the substrate surface is a high refractive index film layer, and the outermost layer close to the air interface is a dielectric material film layer;

[0010] The optical thickness between adjacent film layers is different.

[0011] In the present invention, the stacked high refractive index film layer and dielectric material film layer are a group, and the anti-reflection film includes 2 to 5 groups, for example, 2 groups, 3 groups, 4 groups or 5 groups, preferably 3 groups.

[0012] The anti-reflection film of the utility model is arranged in a manner that the film layer is arranged according to the optical thickness and the film layer material, the total number of film layers is small, the residual reflection is low, and the requirements of the aluminum alloy standard tool can be met;

[0013] More specifically, in the utility model, the high refractive index film layer is laminated to the substrate, thereby increasing the bonding force between the film layer and the substrate; and the dielectric material film layer is placed close to the air interface, which is beneficial to reducing the reflectivity.

[0014] As a preferred technical solution of the present invention, the high refractive index film layer includes a metal titanium layer.

[0015] Preferably, the thickness of the high refractive index film layer is ≤150nm, for example, it can be 150nm, 130nm, 110nm, 90nm, 70nm or 50nm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0016] As a preferred technical solution of the utility model, the dielectric material film layer includes SiO 2 layer.

[0017] Preferably, the thickness of the dielectric material film layer is 50-150 nm, for example, 50 nm, 70 nm, 90 nm, 110 nm, 130 nm or 150 nm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0018] As a preferred technical solution of the present invention, the thickness of the anti-reflection film is 290 to 530 nm, for example, it can be 290 nm, 350 nm, 400 nm, 450 nm, 500 nm or 530 nm, but is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable, preferably 404.87 nm.

[0019] As a preferred technical solution of the present invention, the substrate includes an aluminum alloy substrate.

[0020] Preferably, the optical thickness of the high refractive index film layer is 0.1-2, for example, 0.1, 0.3, 0.6, 0.9, 1.2, 1.5, 1.8 or 2, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0021] Preferably, the optical thickness of the first high refractive index film layer close to the substrate surface is 1.6 to 1.65, for example, it can be 1.6, 1.61, 1.62, 1.63, 1.64 or 1.65, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0022] Preferably, the optical thickness of the first high refractive index film layer close to the air interface is 0.1-0.15, for example, it can be 0.1, 0.11, 0.12, 0.13, 0.14 or 0.15, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0023] As a preferred technical solution of the present invention, the optical thickness of the dielectric material film layer is 0.9 to 1.1, for example, it can be 0.9, 0.95, 1.0, 1.05 or 1.1, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0024] Preferably, the optical thickness of the first dielectric material film layer close to the substrate surface is 0.95 to 1.0, for example, it can be 0.95, 0.96, 0.97, 0.98, 0.99 or 1.0, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0025] Preferably, the optical thickness of the first dielectric material film layer close to the air interface is 0.9 to 0.95, for example, it can be 0.9, 0.91, 0.92, 0.93, 0.94 or 0.95, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0026] Exemplarily, when the film layer structure of the anti-reflection film includes three groups of high refractive index film layers and dielectric material film layers arranged alternately from the substrate outward, the direction outward from the substrate includes a first high refractive index film layer, a first dielectric material film layer, a second high refractive index film layer, a second dielectric material film layer, a third high refractive index film layer and a third dielectric material film layer arranged in sequence;

[0027] Preferably, the optical thickness of the first high refractive index film layer is 1.6 to 1.65, for example, 1.6, 1.61, 1.62, 1.63, 1.64 or 1.65, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0028] The optical thickness of the first dielectric material film layer is 0.95-1.0, for example, 0.95, 0.96, 0.97, 0.98, 0.99 or 1.0, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0029] The optical thickness of the second high refractive index film layer is 0.25 to 0.3, for example, 0.25, 0.26, 0.27, 0.28, 0.29 or 0.3, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0030] The optical thickness of the second dielectric material film layer is 1.05-1.1, for example, 1.05, 1.06, 1.07, 1.08, 1.09 or 1.1, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0031] The optical thickness of the third high refractive index film layer is 0.1-0.15, for example, it can be 0.1, 0.11, 0.12, 0.13, 0.14 or 0.15, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0032] The optical thickness of the third dielectric material film layer is 0.9-0.95, for example, 0.9, 0.91, 0.92, 0.93, 0.94 or 0.95, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0033] In the present invention, the method for preparing the anti-reflection film comprises the following steps:

[0034] (1) Pre-treating and heating the substrate in sequence;

[0035] (2) placing the substrate into a vacuum chamber, evacuating the vacuum chamber, and then pre-cleaning the substrate using an ion source;

[0036] (3) Alternately coating the pre-cleaned substrate obtained in step (2) with a high refractive index film material and a dielectric material film material, and then cooling the substrate to obtain the anti-reflection film.

[0037] Preferably, the pretreatment in step (1) comprises immersion washing, ultrasonic cleaning and drying treatment performed sequentially.

[0038] Preferably, the soaking includes immersion cleaning using a volatile detergent.

[0039] In the utility model, the purpose of the immersion is to remove the turning fluid and dirt on the surface of the substrate.

[0040] Preferably, the drying comprises hot air drying.

[0041] Preferably, the step (1) further includes performing an appearance inspection on the substrate before the heating treatment.

[0042] Preferably, the end point of the vacuuming in step (2) is when the vacuum degree reaches 2.0E-3Pa.

[0043] Preferably, the pre-cleaning time in step (2) is 50 to 70 seconds, for example, 50 seconds, 54 seconds, 58 seconds, 62 seconds, 66 seconds or 70 seconds, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0044] Preferably, the preparation process of the high refractive index film material in step (3) includes: pre-melting the high refractive index material under a vacuum state.

[0045] Preferably, the vacuum degree of the vacuum state is 5.0E-3Pa.

[0046] Preferably, the pre-melting includes: gradually increasing the electron gun beam current from 0 to 150mA, with a rise time of 10s and a holding time of 10s; then increasing the electron gun beam current from 150mA to 240mA, with a rise time of 10s and a holding time of 10s, and setting the spot scanning to Xs=65%, Ys=45%; then gradually reducing the electron gun beam current to 220mA, with a reduction time of 5s, and opening the baffle after a holding time of 5s, so that the material evaporates in the form of steam molecules, and the evaporation rate of the steam molecules is 1A / s.

[0047] Preferably, the ion source energy BV in the coating in step (3) ranges from 100 to 1500 V, for example, it can be 100 V, 500 V, 900 V, 1300 V or 1500 V, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0048] Preferably, the ion source BI current density in the coating in step (3) is 100-1800mA, for example, it can be 100mA, 500mA, 800mA, 1100mA, 1400mA or 1500mA, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0049] Preferably, the ion source ACC voltage in the coating in step (3) is 100-1000V, for example, 100V, 200V, 400V, 600V, 800V or 1000V, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0050] Preferably, the cooling treatment in step (3) is vacuum cooling.

[0051] Preferably, the vacuum cooling time is 1100-1300 s, for example, it can be 1100 s, 1140 s, 1180 s, 1220 s, 1260 s or 1300 s, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0052] The system refers to an equipment system, a device system or a production device.

[0053] Compared with the prior art, the beneficial effects of the utility model are:

[0054] (1) The anti-reflection film provided by the utility model has a simple structure, a thin film thickness, and a small number of layers, and can reduce the reflectivity of the aluminum alloy substrate to below 4%, meeting the requirements of the etalon;

[0055] (2) The high refractive index film layer and the dielectric material film layer in the anti-reflection film provided by the utility model have excellent bonding strength with the metal substrate, ensuring the requirements of adhesion and reliability;

[0056] (3) The preparation method of the anti-reflection film provided by the utility model is simple, easy to mass-produce, and suitable for industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1 A schematic diagram of the structure of the anti-reflection film provided in Example 1 of the utility model;

[0058] Figure 2 A schematic diagram of the structure of the anti-reflection film provided in Example 2 of the utility model;

[0059] Figure 3 A schematic diagram of the structure of an anti-reflection film provided in Example 3 of the utility model;

[0060] Figure 4 This is a measured reflectivity curve of the anti-reflection film provided in Example 1 of the utility model;

[0061] Among them: 1 is a substrate, 2 is a high refractive index film layer, and 3 is a dielectric material film layer. DETAILED DESCRIPTION

[0062] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0063] It should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0064] The technical solution of the utility model is further explained below with reference to the accompanying drawings and through specific implementation methods.

[0065] Example 1

[0066] This embodiment provides a Figure 1 The anti-reflection film shown, the film layer structure of the anti-reflection film includes, from the substrate 1 outwards: 3 groups of high refractive index film layers 2 and dielectric material film layers 3 arranged alternately;

[0067] In the film layer structure, the first layer close to the surface of the substrate 1 is a high refractive index film layer 2, and the outermost layer close to the air interface is a dielectric material film layer 3;

[0068] The optical thickness between adjacent film layers is different.

[0069] The high refractive index film layer 2 is a metal titanium layer; the dielectric material film layer 3 is SiO 2 layer; the substrate is an aluminum alloy substrate;

[0070] In the direction outward from the substrate, the anti-reflection film includes a first high refractive index film layer, a first dielectric material film layer, a second high refractive index film layer, a second dielectric material film layer, a third high refractive index film layer and a third dielectric material film layer which are stacked in sequence;

[0071] The thickness of the first high refractive index film layer is 116.18 nm, and the optical thickness is 1.62;

[0072] The thickness of the first dielectric material film layer is 85.48 nm, and the optical thickness is 0.98;

[0073] The thickness of the second high refractive index film layer is 19.84 nm, and the optical thickness is 0.28;

[0074] The thickness of the second dielectric material film layer is 94.08 nm, and the optical thickness is 1.08;

[0075] The thickness of the third high refractive index film layer is 9.92 nm, and the optical thickness is 0.14;

[0076] The thickness of the third dielectric material film layer is 79.37 nm, and the optical thickness is 0.91.

[0077] The measured reflectivity curve of the anti-reflection film provided in this embodiment is as follows: Figure 4 shown.

[0078] Example 2

[0079] This embodiment provides a Figure 2 The anti-reflection film shown, the film layer structure of the anti-reflection film includes, from the substrate 1 outwards: 4 groups of high refractive index film layers 2 and dielectric material film layers 3 arranged alternately;

[0080] In the film layer structure, the first layer close to the surface of the substrate 1 is a high refractive index film layer 2, and the outermost layer close to the air interface is a dielectric material film layer 3;

[0081] The optical thickness between adjacent film layers is different.

[0082] The high refractive index film layer 2 is a metal titanium layer; the dielectric material film layer 3 is SiO 2 layer; the substrate is an aluminum alloy substrate;

[0083] In the direction outward from the substrate, the anti-reflection film includes a first high refractive index film layer, a first dielectric material film layer, a second high refractive index film layer, a second dielectric material film layer, a third high refractive index film layer, a third dielectric material film layer, a fourth high refractive index film layer and a fourth dielectric material film layer which are stacked in sequence;

[0084] The thickness of the first high refractive index film layer is 113.34 nm, and the optical thickness is 1.60;

[0085] The thickness of the first dielectric material film layer is 82.86 nm, and the optical thickness is 0.95;

[0086] The thickness of the second high refractive index film layer is 36.84 nm, and the optical thickness is 0.52;

[0087] The thickness of the second dielectric material film layer is 88.97 nm, and the optical thickness is 1.02;

[0088] The thickness of the third high refractive index film layer is 24.79 nm, and the optical thickness is 0.35;

[0089] The thickness of the third dielectric material film layer is 95.94 nm, and the optical thickness is 1.1;

[0090] The thickness of the fourth high refractive index film layer is 7.08 nm, and the optical thickness is 0.10;

[0091] The thickness of the fourth dielectric material film layer is 78.5 nm, and the optical thickness is 0.90.

[0092] Example 3

[0093] This embodiment provides a Figure 3 The anti-reflection film shown, the film layer structure of the anti-reflection film includes, from the substrate 1 outwards: two groups of high refractive index film layers 2 and dielectric material film layers 3 arranged alternately;

[0094] In the film layer structure, the first layer close to the surface of the substrate 1 is a high refractive index film layer 2, and the outermost layer close to the air interface is a dielectric material film layer 3;

[0095] The optical thickness between adjacent film layers is different.

[0096] The high refractive index film layer 2 is a metal titanium layer; the dielectric material film layer 3 is SiO 2 layer; the substrate is an aluminum alloy substrate;

[0097] In the direction outward from the substrate, the anti-reflection film includes a first high refractive index film layer, a first dielectric material film layer, a second high refractive index film layer and a second dielectric material film layer which are stacked in sequence;

[0098] The thickness of the first high refractive index film layer is 116.89 nm, and the optical thickness is 1.65;

[0099] The thickness of the first dielectric material film layer is 87 nm, and the optical thickness is 1.0;

[0100] The thickness of the second high refractive index film layer is 10.63 nm, and the optical thickness is 0.15;

[0101] The thickness of the second dielectric material film layer is 82.86 nm, and the optical thickness is 0.95.

[0102] Example 4

[0103] This embodiment provides an anti-reflection film, which is different from the embodiment 1 only in that:

[0104] In this embodiment, the setting positions of the first high refractive index film layer and the third high refractive index film layer are swapped, that is, in the direction from the substrate to the outside, the anti-reflection film includes a third high refractive index film layer, a first dielectric material film layer, a second high refractive index film layer, a second dielectric material film layer, a first high refractive index film layer and a third dielectric material film layer which are stacked in sequence.

[0105] Comparative Example 1

[0106] This comparative example provides an anti-reflection film, which differs from Example 1 only in that:

[0107] In this comparative example, the thickness of all high refractive index film layers is set to 100 nm, and the optical thickness is set to 1.41.

[0108] Comparative Example 2

[0109] This comparative example provides an anti-reflection film, which differs from Example 1 only in that:

[0110] In this comparative example, the thickness of all dielectric material film layers is set to 100 nm, and the optical thickness is set to 1.15.

[0111] Comparative Example 3

[0112] This comparative example provides an anti-reflection film, which differs from Example 1 only in that:

[0113] In this comparative example, the high refractive index film layer is adjusted to TiO 2 layer.

[0114] Comparative Example 4

[0115] This comparative example provides an anti-reflection film, which differs from Example 1 only in that:

[0116] In this comparative example, the arrangement positions of the first high refractive index film layer and the first dielectric material film layer are swapped.

[0117] Comparative Example 5

[0118] This comparative example provides an anti-reflection film, which differs from Example 1 only in that:

[0119] In this comparative example, a metal titanium layer with a thickness of 50 nm and an optical thickness of 0.7 is disposed on the upper surface of the third dielectric material film layer.

[0120] Performance Test:

[0121] The anti-reflection films provided in the above embodiments and comparative examples were tested as follows:

[0122] Maximum reflectivity test: The reflectivity spectrum in the 400-880 nm band was obtained by using the MSP-100 spectrophotometer to observe the maximum reflectivity of the anti-reflection film. The results are shown in Table 1.

[0123] Table 1

[0124] Maximum reflectivity (420~680nm band) Maximum reflectivity (681~850nm band) Example 1 0.28% 3.23% Example 2 3.8% 0.997% Example 3 1.967% 1.64% Example 4 31.9% 37.23% Comparative Example 1 31.9% 37.73% Comparative Example 2 2.94% 1.02% Comparative Example 3 95.96% 81.3% Comparative Example 4 2.1% 3.8% Comparative Example 5 0.48% 5.28%

[0125] According to the data in Table 1, we can know the following points:

[0126] (1) Comprehensive analysis of Examples 1-3 shows that the anti-reflection film provided by the utility model can reduce the reflectivity in different bands to less than 4% under the premise of a small number of film layers, thus meeting the requirements of the etalon;

[0127] (2) Comprehensive analysis of Example 1 and Example 4 shows that when the optical thickness of the high refractive index film layer is not set according to the rule of gradually decreasing, the reflectivity will increase and cannot meet the requirements of the etalon;

[0128] (3) Comprehensive analysis of Example 1 and Comparative Examples 1-2 shows that setting different optical thicknesses between film layers is more conducive to reducing reflectivity;

[0129] (4) Comprehensive analysis of Example 1 and Comparative Example 3 shows that compared with TiO 2 Layer, the metal titanium layer used in the utility model can more effectively reduce the reflectivity;

[0130] (5) Comprehensive analysis of Example 1 and Comparative Examples 4-5 shows that the bonding force between the metal titanium layer and the aluminum alloy substrate is good, which can effectively ensure the adhesion and reliability requirements;

[0131] In addition, compared with the direct contact between the metal titanium layer and the air interface, SiO 2 The direct contact between the layer and the air interface is more conducive to reducing the reflectivity in the 681-850nm band to meet the requirements of the standard tool.

[0132] In summary, the anti-reflection film provided by the utility model has a simple structure, a thin film thickness, and a small number of layers, and can reduce the reflectivity of the aluminum alloy substrate to below 4%, meeting the requirements of the etalon.

[0133] The applicant declares that the above is only a specific implementation method of the present utility model, but the protection scope of the present utility model is not limited thereto. The technicians in the relevant technical field should understand that any changes or substitutions that can be easily thought of by the technicians in the relevant technical field within the technical scope disclosed in the present utility model fall within the protection scope and disclosure scope of the present utility model.

Claims

1. An anti-reflection film, characterized in that: The film layer structure of the anti-reflection film includes, from the substrate outward, 2 to 5 groups of high refractive index film layers and dielectric material film layers arranged alternately; In the film layer structure, the first layer close to the substrate surface is a high refractive index film layer, and the outermost layer close to the air interface is a dielectric material film layer; The optical thickness between adjacent film layers is different.

2. The anti-reflection film according to claim 1, characterized in that: The high refractive index film layer comprises a metal titanium layer; The thickness of the high refractive index film layer is ≤150nm.

3. The anti-reflection film according to claim 1, characterized in that: The dielectric material film layer includes a SiO2 layer.

4. The anti-reflection film according to claim 1, characterized in that: The thickness of the dielectric material film layer is 50-150 nm.

5. The anti-reflection film according to claim 1, characterized in that: The thickness of the anti-reflection film is 290-530 nm.

6. The anti-reflection film according to claim 1, characterized in that: The substrate includes an aluminum alloy substrate.

7. The anti-reflection film according to claim 1, characterized in that: The optical thickness of the high refractive index film layer is 0.1-2.

8. The anti-reflection film according to claim 7, characterized in that: The optical thickness of the first high refractive index film layer close to the substrate surface is 1.6 to 1.65; The optical thickness of the first high refractive index film layer close to the air interface is 0.1 to 0.

15.

9. The anti-reflection film according to claim 1, characterized in that: The optical thickness of the dielectric material film layer is 0.9 to 1.

1.

10. The anti-reflection film according to claim 9, characterized in that: The optical thickness of the first dielectric material film layer close to the substrate surface is 0.95-1.0; The optical thickness of the first dielectric material film layer close to the air interface is 0.9 to 0.95.

Citation Information

Patent Citations

  • Solar cell subtracts reflective film

    CN207233746U