Plasma enhanced vapor deposition equipment

Abstract

The utility model discloses plasma enhanced vapor deposition equipment which comprises a reaction cavity and an outer vacuum cavity, and the reaction cavity is arranged in the outer vacuum cavity; the device further comprises a plasma generation assembly, a source gas inlet device, a gas diffusion cavity, a workpiece frame of a multi-layer structure, a heating device and a vacuum pump. The workpiece frame of a multi-layer structure is vertically and rotatably installed in the reaction cavity, the gas diffusion cavity is formed in the inner side wall of the reaction cavity, the height of the gas diffusion cavity is matched with the total height of an upper frame of the workpiece frame, and the face, opposite to the workpiece frame, of the gas diffusion cavity is provided with a diffusion plate with a plurality of air holes distributed longitudinally and transversely to form a gas diffusion opening of the gas diffusion cavity. Gas outlets of the plasma generation assembly and the source gas inlet device are communicated with the gas diffusion cavity, the heating device is arranged on the cavity wall of the reaction cavity, and the vacuum pump is connected with the reaction cavity and the outer vacuum cavity through pipelines. Compared with the prior art, vapor deposition equipment is applied to the field of optical coating, and high yield and large-scale equipment are realized.

Description

Technical Field

[0001] The utility model relates to plasma enhanced gas phase deposition equipment. Background Art

[0002] Plasma-enhanced vapor deposition equipment in the prior art is usually used in the semiconductor field. The workpieces of this equipment are supported on a single-layer platform, and the output is low. For example, a single furnace can only produce 5-6 4- to 6-inch wafers at a time. The applicant intends to study its application in optical coating, and then develop a large-scale plasma-enhanced vapor deposition equipment with high output. For example, the vapor deposition equipment developed by the utility model can coat 80-90 12-inch workpieces in a single furnace. Utility Model Content

[0003] The utility model aims to provide a large-scale plasma-enhanced vapor deposition device with high output for the field of optical coating.

[0004] The purpose of the utility model is achieved through the following technical solution: a plasma enhanced vapor deposition device, comprising a reaction chamber and an outer vacuum chamber, wherein the reaction chamber is arranged inside the outer vacuum chamber;

[0005] It also includes a plasma generating assembly, a source gas inlet device, a gas diffusion chamber, a multi-layered workpiece rack, a heating device and a vacuum pump;

[0006] The multi-layer workpiece rack is vertically and rotatably installed in the reaction chamber, the gas diffusion chamber is arranged on the inner side wall of the reaction chamber, and its height is adapted to the total height of the upper shelf of the workpiece rack. The side opposite to the workpiece rack is a diffusion plate with multiple air holes arranged vertically and horizontally, which constitutes the gas diffusion port of the gas diffusion chamber, the gas outlets of the plasma generating assembly and the source air inlet device both lead to the gas diffusion chamber, the heating device is arranged on the cavity wall of the reaction chamber, and the vacuum pump is connected to the reaction chamber and the outer vacuum chamber respectively through pipelines.

[0007] The vapor deposition equipment of the utility model has high output and large volume, and the process is difficult to achieve the same sealing level. Therefore, the utility model adopts a double-layer structure chamber, which is connected to a vacuum pump respectively, and uses this outer layer structure to better prevent impurity gas from entering the inner layer and process gas leakage, avoid pollution, ensure the product yield, and reduce manufacturing production costs.

[0008] As can be seen from the above, in order to achieve high production, the utility model adopts a multi-layer workpiece rack. In order to ensure the uniformity of the coating, the utility model adjusts the air intake method in the prior art, and sets a gas diffusion chamber that is highly adapted to the workpiece rack next to it. The gas outlets of the plasma generating assembly and the source air intake device are both connected to the gas diffusion chamber. The gas diffuses in the gas diffusion chamber, and after reaching the diffusion plate in front, part of it is rebounded (rebounded by the structure between the holes of the diffusion plate) and mixed with the gas in the rear before being output again, thereby improving the uniformity of the output gas. Moreover, the uniform distribution of the gas is also conducive to reducing the end flow effect of the gas, making it easier to be pumped away by the vacuum pump, thereby further ensuring the qualified rate of the product.

[0009] Preferably, during operation, the outer vacuum chamber is filled with an inert gas so that the gas pressure is higher than that of the reaction chamber, so as to better prevent leakage of process gas in the reaction chamber.

[0010] Preferably, the diffuser plate is installed in a detachable manner so that a diffuser plate with a suitable aperture can be replaced during production.

[0011] Preferably, the pipeline connecting the vacuum pump with the reaction chamber and the external vacuum chamber is controlled by a ball valve or a butterfly valve.

[0012] Preferably, the heating device is arranged on the outer wall of the reaction chamber.

[0013] Preferably, the gas extraction port of the reaction chamber is arranged on the opposite side of the gas diffusion chamber.

[0014] Preferably, the air holes of the diffusion plate are trumpet-shaped to increase the diffusion range and facilitate uniform distribution of the gas.

[0015] Beneficial effects:

[0016] In order to meet the needs of the optical coating field, the utility model provides a large-scale plasma-enhanced vapor deposition equipment with high output. In order to compensate for the influence of large-scale equipment on airtight performance, it adopts a vacuum cavity with an inner and outer double-layer structure, and is respectively connected to a vacuum pump for vacuuming, which can well prevent impurity gases from entering the reaction cavity and process gas leakage, avoid pollution, ensure the yield rate of products, and reduce manufacturing production costs; in order to increase the output, it adopts a multi-layer workpiece rack, and then arranges a gas diffusion cavity with a height adapted to the workpiece rack next to the workpiece rack, and allows the gas outlet ends of the plasma generating assembly and the source air inlet device to lead to the gas diffusion cavity, so that the gas on different layers of the workpiece rack is evenly distributed, while improving the output, ensuring the uniformity of the coating, and more uniform air intake can also improve the end flow effect of the gas, thereby further ensuring the qualified rate of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of a plasma enhanced vapor deposition device according to a preferred embodiment of the utility model;

[0018] Figure 2 yes Figure 1 A schematic diagram of a cross-sectional view of a gas diffusion chamber;

[0019] Figure 3 yes Figure 1 Schematic diagram of the structure of the diffuser plate. DETAILED DESCRIPTION

[0020] The utility model will be further described below in conjunction with the accompanying drawings and embodiments.

[0021] The vapor deposition equipment of this embodiment occupies an area of ​​about 20 square meters and can complete the coating of 80-90 12-inch workpieces at a time. Figure 1 As shown, the cavity is a double-layer structure, including a reaction cavity 2 and an outer vacuum cavity 1. The reaction cavity 2 is arranged inside the outer vacuum cavity 1. Both layers of the cavity are connected to the vacuum pump 11 through pipelines. 13 is an exhaust port for discharging excess gas atoms and molecules in the cavity. 10 is a butterfly valve for controlling the gas path.

[0022] As the equipment becomes larger, the process becomes more difficult to achieve the same sealing level. A double-layer cavity is used here, and the inner and outer layers are connected to the vacuum pump at the same time, which can better prevent impurity gases from entering the inner layer, ensure the yield of the coating, and reduce manufacturing production costs.

[0023] The above solution can also be improved as follows: during operation, inert gas is filled into the outer vacuum chamber 1 through the air inlet 14 to make its gas pressure higher than that of the reaction chamber 2. This solution can better prevent the leakage of process gas, especially toxic gas, in the reaction chamber 2.

[0024] like Figure 1 As shown, the vapor deposition equipment of this embodiment further includes a plasma generating component, a source gas inlet device 8 , a gas diffusion chamber 5 , a multi-layered workpiece rack 7 , and a heating device 12 .

[0025] The plasma assembly in this embodiment includes a plasma gas inlet device 9, an inductively coupled coil 4 and a plasma reaction chamber 3. The plasma gas inlet device 9 delivers corresponding gas to the plasma reaction chamber 3. The inductively coupled coil 4 is sleeved outside the plasma reaction chamber 3. After being connected to the matcher and the high-frequency power supply, a predetermined magnetic field area is generated when energized, so that the gas input into the plasma reaction chamber 3 is activated or excited to generate plasma under the action of the magnetic field and leads to the gas diffusion chamber 5. The gas outlet of the source gas inlet device 8 also leads to the gas diffusion chamber 5, such as Figure 1 shown.

[0026] The multi-layer workpiece rack 7 is vertically and rotatably installed in the reaction chamber 2, and the gas diffusion chamber 5 is arranged on the inner wall of the reaction chamber 2, and the height is adapted to the total height of the upper shelf of the workpiece rack 7. The side opposite to the workpiece rack 7 is a diffusion plate 6 with multiple air holes arranged vertically and horizontally, which constitutes the gas diffusion port of the gas diffusion chamber 5. The heating device 12 is arranged on the outer wall of the reaction chamber 2. The heating device 12 is used to ensure the process temperature. In this embodiment, heating tubes are used, which are arranged on 5 surfaces (except the bottom surface) of the outer wall of the reaction chamber, and the reaction chamber 2 can be quickly heated in a vacuum environment.

[0027] In order to meet the production demand, this embodiment adopts a multi-layer workpiece rack 7. In order to ensure the uniformity of the coating, this embodiment sets a gas diffusion chamber 5 that is highly adapted to the workpiece rack 7, and the gas outlets of the plasma generating assembly and the source gas inlet device 8 are both connected to the gas diffusion chamber 5. The gas diffuses in the gas diffusion chamber 5, and after reaching the diffusion plate 6 in front, part of it is rebounded and mixed with the gas in the rear before being output, thereby improving the uniformity of the output gas. Moreover, the uniform distribution of the gas is also conducive to reducing the end flow effect of the gas, making it easier to be pumped away by the vacuum pump, thereby further ensuring the qualified rate of the product.

[0028] It should be noted that Figure 1 The gas diffusion chamber 5 in the embodiment is designed on only one side, and in other embodiments, a double-sided design may also be adopted. The gas extraction port 13 of the reaction chamber 2 is preferably arranged on the opposite side of the gas diffusion chamber 5 .

[0029] Figure 2 It is a schematic cross-sectional view of the gas diffusion chamber 5. 51 and 52 are used to connect the plasma generating assembly and the source gas inlet device 8 respectively. Figure 3 Schematic diagram of the structure of the diffusion plate 6, which is detachably mounted by screws so that the corresponding aperture can be replaced according to needs. Figure 2 It can be seen that the air holes of the diffusion plate 6 of this embodiment are trumpet-shaped to increase the diffusion range and facilitate uniform distribution of the gas.

[0030] Finally, it should be pointed out that for ordinary technicians in this field, without departing from the concept of the utility model, the above-mentioned technical features can be deformed to form equivalent technical solutions, and these equivalent solutions should also fall within the protection scope of the utility model.

Claims

1. A plasma enhanced vapor deposition apparatus, characterized in that: It comprises a reaction chamber and an outer vacuum chamber, wherein the reaction chamber is arranged inside the outer vacuum chamber; It also includes a plasma generating assembly, a source gas inlet device, a gas diffusion chamber, a multi-layered workpiece rack, a heating device and a vacuum pump; The multi-layer workpiece rack is vertically and rotatably installed in the reaction chamber, the gas diffusion chamber is arranged on the inner side wall of the reaction chamber, and its height is adapted to the total height of the upper shelf of the workpiece rack. The side opposite to the workpiece rack is a diffusion plate with multiple air holes arranged vertically and horizontally, which constitutes the gas diffusion port of the gas diffusion chamber, the gas outlets of the plasma generating assembly and the source air inlet device both lead to the gas diffusion chamber, the heating device is arranged on the cavity wall of the reaction chamber, and the vacuum pump is connected to the reaction chamber and the outer vacuum chamber respectively through pipelines.

2. The vapor deposition apparatus according to claim 1, characterized in that: During operation, the outer vacuum chamber is filled with inert gas, so that the gas pressure is higher than that of the reaction chamber.

3. The vapor deposition device according to claim 1 or 2, characterized in that: The diffusion plate is installed in a detachable manner.

4. The vapor deposition apparatus according to claim 1 or 2, characterized in that: The pipeline connecting the vacuum pump with the reaction chamber and the external vacuum chamber is controlled by a ball valve or a butterfly valve.

5. The vapor deposition apparatus according to claim 1 or 2, characterized in that: The heating device is arranged on the outer wall of the reaction chamber.

6. The vapor deposition device according to claim 1 or 2, characterized in that: The gas extraction port of the reaction chamber is arranged on the opposite side of the gas diffusion chamber.

7. The vapor deposition apparatus according to claim 1 or 2, characterized in that: The air holes of the diffusion plate are in a trumpet shape.

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