Gallium oxide crystal growing device

Abstract

The utility model relates to the technical field of gallium oxide, and discloses a gallium oxide crystal growing device which comprises a processing furnace and a copper seat arranged in an inner cavity of the processing furnace. When a high-frequency electromagnetic field passes through the crucible, a strong magnetic field can be generated in the crucible, due to the existence of the magnetic field, a melt in the crucible is pushed away from the wall of the crucible under the action of a magnetic compression effect to form a suspension state, and the suspension state can prevent direct contact between the crucible and the melt, so that pollution of the crucible to crystals is avoided; cooling liquid in the water storage shell is conveyed into the water cooling copper pipe through the water conveying pipe by turning on the water pump, then the water cooling shell is attached to the gallium oxide shell layer, forced cooling is conducted through cooling water, a thin solidification shell is formed between melt and the crucible wall, however, the cooling liquid can be discharged into the water storage shell from the water discharging pipe on the other side, and cooling is conducted. And then the circulating liquid is secondarily cooled by the condenser pipe through the refrigerating device, so that the resource waste is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium oxide, in particular to a gallium oxide crystal growth device. Background Art

[0002] Gallium oxide is an excellent ultra-wide bandgap semiconductor material and an ideal material for manufacturing high-power electronic devices and solar-blind ultraviolet optoelectronic devices. It has broad application prospects and huge market potential in the fields of power devices and optoelectronic devices due to its superior physical properties, high thermal and chemical stability, low energy loss, good controllability and low cost.

[0003] There are many methods for growing gallium oxide crystals, among which the cold crucible method is a special method for growing crystals from a melt. It utilizes the principle of high-frequency electromagnetic field induction heating, and uses electromagnetic repulsion to keep the charge melt and the crucible in a non-contact suspension state, thereby achieving heating and insulation of the melt. Compared with other methods of growing crystals, it avoids direct contact between the crucible and the melt, thereby reducing the contamination of the crucible to the crystal. At the same time, forced cooling forms a thin solidified shell between the melt and the crucible wall. This solidified shell can block the reaction between the melt and the crucible, protecting the purity and quality of the crystal. Not only that, some cooling liquids are currently directly discharged after use, resulting in a waste of resources. Utility Model Content

[0004] The purpose of the utility model is to provide a gallium oxide crystal growth device to solve the problems raised in the above background technology.

[0005] To achieve the above-mentioned purpose, the utility model provides the following technical solution: a gallium oxide crystal growth device, including a processing furnace, and also including:

[0006] A copper seat is arranged in the inner cavity of the processing furnace, a gallium oxide shell layer is arranged on the top of the copper seat, a water cooling shell is arranged on the top of the copper seat, and a high-frequency induction coil is arranged between the water cooling shell and the gallium oxide shell layer;

[0007] A heating device body is arranged on the top of the copper seat, the inner cavity of the heating device body is provided with a heating tube, the inner cavity of the water-cooling shell is provided with a water-cooling copper tube, a drainage pipe is provided on one side of the bottom of the water-cooling shell, and a water pipe is provided on the other side of the bottom of the water-cooling shell, the bottom of the processing furnace is fixedly connected with a base, and the top of the copper seat is provided with a baffle.

[0008] Preferably, a water storage shell is provided on one side of the top of the base, and the top of the water storage shell is connected to a drain pipe.

[0009] Preferably, a water pump is fixedly connected to one side of the top of the base, one side of the water pump is connected to the water pipe, and the other side of the water pump is connected to the water storage shell.

[0010] Preferably, a refrigeration device is provided on one side of the inner cavity of the water storage shell, and a condenser is provided on one side of the refrigeration device.

[0011] Preferably, a hydraulic rod is fixedly connected to the top of the base, and the top of the hydraulic rod is mounted on the gallium oxide shell.

[0012] Preferably, an opening for loading melt and seed crystals is provided above the gallium oxide shell layer, and the bottom of the gallium oxide shell layer is funnel-shaped.

[0013] Preferably, a reinforcement block is fixedly connected to one side of the water storage shell, and the bottom of the reinforcement block is fixedly connected to the base.

[0014] Compared with the prior art, the beneficial effects of the utility model are as follows:

[0015] In the utility model, in the gallium oxide shell layer of the cold crucible, the crucible is usually made of a conductive material. When a high-frequency electromagnetic field passes through the crucible, a strong magnetic field is generated in the crucible. Due to the existence of the magnetic field, the melt in the crucible is subjected to the effect of the magnetic compression effect and is pushed away from the crucible wall to form a suspended state. Such a suspended state can prevent the direct contact between the crucible and the melt, and avoid the crucible from polluting the crystal. At the same time, the cold crucible method also utilizes the forced cooling effect of water. By turning on the water pump, the cooling liquid in the water storage shell is transported to the water-cooled copper tube through the water delivery pipe, and then the water-cooled shell is attached to the gallium oxide shell layer, and forced cooling is performed by cooling water, so that a thin solidified shell is formed between the melt and the crucible wall. The composition of this solidified shell is similar to that of the melt, which can block the reaction between the melt and the crucible, and further protect the purity of the crystal. However, the cooling liquid will be discharged from the drain pipe on the other side to the water storage shell, and then the condenser tube is used to perform secondary cooling on the circulating liquid through the refrigeration device, thereby reducing resource waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of a gallium oxide crystal growth device provided by the utility model;

[0017] Figure 2 A schematic diagram of the top view structure provided by the utility model;

[0018] Figure 3 A schematic diagram of the water storage pipe structure provided by the utility model;

[0019] Figure 4 The utility model is a schematic diagram of the cross-sectional structure of a processing furnace.

[0020] In the figure: 1. processing furnace; 2. copper seat; 3. gallium oxide shell; 4. water-cooling shell; 5. baffle; 6. high-frequency induction coil; 7. heating device body; 71. heating tube; 8. water-cooling copper tube; 81. drainage pipe; 82. water pipe; 9. base; 10. water storage shell; 11. water pump; 12. refrigeration device; 121. condenser; 13. hydraulic rod; 14. reinforcement block. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0022] See also Figure 1-4 As shown, a gallium oxide crystal growth device includes a processing furnace 1, and also includes: a copper seat 2 in the inner cavity of the processing furnace 1, a gallium oxide shell 3 is arranged on the top of the copper seat 2, an opening for filling a melt and a seed crystal is arranged above the gallium oxide shell 3, and the opening is arranged to facilitate the injection of the melt and the seed crystal into the inner cavity of the gallium oxide shell 3, and the bottom of the gallium oxide shell 3 is funnel-shaped, a water cooling shell 4 is arranged on the top of the copper seat 2, and the gallium oxide shell 3 can be cooled by the arrangement of the water cooling shell 4, and a high-frequency induction coil 6 is arranged between the water cooling shell 4 and the gallium oxide shell 3;

[0023] A heating device body 7 is arranged on the top of the copper seat 2, and a heating tube 71 is arranged in the inner cavity of the heating device body 7. A water-cooled copper tube 8 is arranged in the inner cavity of the water-cooled shell 4. The water-cooled copper tube 8 can conduct away the heat diffused from the gallium oxide shell 3. The crystal can be grown by the pulling method or the descending method. During the descending method growth process, the position of the induction coil can remain unchanged, and the crucible gallium oxide shell 3 together with the water-cooled shell moves downward at a certain rate, thereby achieving solidification and crystallization. A drainage pipe 81 is arranged on one side of the bottom of the water-cooled shell 4, and a drain pipe 81 is arranged on the other side of the bottom of the water-cooled shell 4. A water pipe 82 is provided, the bottom of the processing furnace 1 is fixedly connected to a base 9, the top of the base 9 is fixedly connected to a hydraulic rod 13, the gallium oxide shell 3 can be moved downward from the heating zone by the hydraulic rod 13, after the crucible enters the gradient zone, the melt is directionally cooled, the part that first reaches a temperature below the melting point crystallizes, and is cooled with the continuous movement of the crucible, the crystallization interface directionally grows in the opposite direction to its movement, and the crystal growth process is continuously carried out, the top of the hydraulic rod 13 is installed with the gallium oxide shell 3, and the top of the copper seat 2 is provided with a baffle 5.

[0024] A water storage shell 10 is provided on one side of the top of the base 9, and a reinforcement block 14 is fixedly connected to one side of the water storage shell 10. The fixed connection between the reinforcement block 14 and the base 9 plays a role in reinforcing the water storage shell 10. The bottom of the reinforcement block 14 is fixedly connected to the base 9, and the top of the water storage shell 10 is connected to the drain pipe 81. A water pump 11 is fixedly connected to one side of the top of the base 9, and one side of the water pump 11 is connected to the water pipe 82, and the other side of the water pump 11 is connected to the water storage shell 10. By turning on the water pump 11, the cooling liquid in the water storage shell 10 can be pumped into the water-cooled copper tube 8 through the water pipe 82, and the cooled liquid will be discharged into the water storage shell 10 through the drain pipe 81. At this time, the condenser 121 is used to re-cool the liquid for circulation through the refrigeration device 12. A refrigeration device 12 is provided on one side of the inner cavity of the water storage shell 10, and a condenser 121 is provided on one side of the refrigeration device 12.

[0025] Working principle: put the gallium oxide shell 3 filled with seed crystal and gallium oxide powder raw materials into the processing furnace 1, evacuate the furnace to 0.1Pa, fill with oxygen and argon, and maintain the pressure in the furnace at 0.5-3.5MPa; the formation of oxygen vacancies in the crystal can be effectively suppressed by controlling the oxygen atmosphere, and the crucible gallium oxide shell 3 is usually made of conductive material. When the high-frequency electromagnetic field passes through the crucible, a strong magnetic field will be generated in the crucible. Due to the existence of the magnetic field, the melt in the crucible is affected by the magnetic compression effect and is pushed away from the crucible wall to form a suspended state. Such a suspended state can prevent direct contact between the crucible and the melt, and avoid the crucible from contaminating the crystal. At the same time, the cold crucible method also utilizes the forced cooling effect of water. By turning on the water pump 11, the cooling liquid in the water storage shell 10 is transported to the water-cooled copper tube 8 through the water pipe 82, and then the water-cooled shell 4 is attached to the gallium oxide shell 3, and forced cooling is performed by cooling water, so that a thin solidified shell is formed between the melt and the crucible wall. The composition of this solidified shell is similar to that of the melt, which can block the reaction between the melt and the crucible and further protect the purity of the crystal. However, the cooling liquid will be discharged from the drain pipe 81 on the other side to the water storage shell 10, and then the condenser 121 will be used through the refrigeration device 12 to perform secondary cooling on the circulating liquid, thereby reducing resource waste.

[0026] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0027] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A gallium oxide crystal growth device, comprising a processing furnace (1), characterized in that: Also includes: A copper seat (2) is arranged in the inner cavity of a processing furnace (1), a gallium oxide shell layer (3) is arranged on the top of the copper seat (2), a water cooling shell (4) is arranged on the top of the copper seat (2), and a high-frequency induction coil (6) is arranged between the water cooling shell (4) and the gallium oxide shell layer (3); A heating device body (7) is arranged on the top of the copper seat (2), the inner cavity of the heating device body (7) is provided with a heating tube (71), the inner cavity of the water-cooling shell (4) is provided with a water-cooling copper tube (8), a drainage pipe (81) is arranged on one side of the bottom of the water-cooling shell (4), and a water supply pipe (82) is arranged on the other side of the bottom of the water-cooling shell (4), the bottom of the processing furnace (1) is fixedly connected to a base (9), and the top of the copper seat (2) is provided with a baffle (5).

2. The gallium oxide crystal growth device according to claim 1, characterized in that: A water storage shell (10) is provided on one side of the top of the base (9), and the top of the water storage shell (10) is connected to a drainage pipe (81).

3. The gallium oxide crystal growth device according to claim 2, characterized in that: A water pump (11) is fixedly connected to one side of the top of the base (9); one side of the water pump (11) is in communication with a water delivery pipe (82); and the other side of the water pump (11) is in communication with a water storage shell (10).

4. The gallium oxide crystal growth device according to claim 2, characterized in that: A refrigeration device (12) is provided on one side of the inner cavity of the water storage shell (10), and a condensation pipe (121) is provided on one side of the refrigeration device (12).

5. The gallium oxide crystal growth device according to claim 1, characterized in that: The top of the base (9) is fixedly connected to a hydraulic rod (13), and the top of the hydraulic rod (13) is mounted on the gallium oxide shell layer (3).

6. The gallium oxide crystal growth device according to claim 1, characterized in that: An opening for loading melt and seed crystals is provided above the gallium oxide shell layer (3), and the bottom of the gallium oxide shell layer (3) is funnel-shaped.

7. The gallium oxide crystal growth device according to claim 2, characterized in that: A reinforcement block (14) is fixedly connected to one side of the water storage shell (10), and the bottom of the reinforcement block (14) is fixedly connected to the base (9).

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