Hard support shield plate siliconizing reaction jig

Abstract

The utility model discloses a hard support shield plate siliconizing reaction jig which comprises a sagger, a blank groove used for containing a blank is formed in the sagger, a siliconizing groove is formed in the bottom of the blank groove, and air holes communicated with the blank groove are formed in the side wall of the sagger. A green body sample is placed in the green body groove and can be used for supporting the green body sample, the siliconizing groove is formed in the bottom of the green body groove to achieve siliconizing of the upper side and the lower side of the green body, the air holes are formed in the sagger to guarantee discharging of redundant silicon steam, and the problems that in the prior art, a siliconizing reaction jig supporting plate is prone to deformation, the siliconizing sample yield is low, and the product quality is poor are solved. And the utilization rate of silicon steam is insufficient.

Description

Technical Field

[0001] The utility model relates to the technical field of siliconizing reaction, in particular to a siliconizing reaction jig for a hard supporting shield. Background Art

[0002] Modern bulletproof materials are developing rapidly and are becoming more and more diverse. They have gradually evolved from simple defensive performance to functionality, flexibility and economy. The main goal of today's development is to achieve light weight, low cost, strong function and long service life of bulletproof materials. Ceramic bulletproof substrates can better meet these requirements. Ceramic bulletproof substrates are lighter in weight and have better mechanical properties than metal bulletproof substrates of the same volume.

[0003] Ceramic bulletproof inserts have the characteristics of light weight, high hardness and excellent comprehensive mechanical properties. Through the atmospheric siliconization process, ceramic inserts with excellent performance and stable structure can be prepared. Under the existing process conditions, it is difficult to have a high yield for the preparation of a whole bulletproof insert. This is because under the existing siliconization conditions, the silicon particles are placed directly on the graphite support, and then the blank is placed above the silicon particles. The silicon particles around the blank are less than the silicon particles in the middle, causing the sample to crack due to incomplete reaction. In addition, the existing process uses a single layer of siliconization. After the contact surface with the silicon particles reacts completely, the siliconization channel is blocked, so that the other side cannot react completely. And the graphite support is easy to deform and crack at high temperature, which leads to deformation of the sample. Then, during the reaction process, the single-layer graphite support cannot effectively gather silicon vapor for the reaction to continue, and some of the silicon vapor will be pumped away by the vacuum pump, causing waste. Again, the single-layer graphite support cannot effectively utilize the space in the height direction of the furnace, resulting in low production efficiency.

[0004] The existing shield production process includes several process steps such as raw material mixing, spray granulation, green body pressing, furnace loading and siliconization and later surface treatment. Raw material mixing is to put the various raw materials in the formula into the ball mill barrel in proportion for ball milling to make the materials uniform; spray granulate the evenly mixed slurry; put the spray granulated material into the mold, and use a press to press the material into a shield-shaped green body under a certain pressure; place the sample on a support plate that fits the sample perfectly, and heat it to 850℃-1000℃ under vacuum or inert gas protection conditions for degreasing reaction, so that the phenolic resin is completely cracked, the residual carbon remains in the green body, and other gases generated during cracking are released from the green body.

[0005] The degreased body is composed of carbon remaining from the high-temperature cracking of diamond and phenolic resin, and has pores of certain size and distribution. The silicon particles are evenly spread on the support plate, and then the degreased body is placed on the silicon particles. It is then placed in a vacuum sintering furnace and heated under vacuum conditions for siliconization reaction. Silicon reacts with free carbon in the body under high temperature conditions to generate SiC to fill the voids in the degreased body. Incompletely reacted silicon will also remain in the body to fill the body pores. The siliconization reaction of the degreased body is the most critical step in the successful preparation of the sample. The sample with complete siliconization reaction has high density, high volume density, low porosity, and good mechanical properties.

[0006] Figure 1 It is the shape of the blank after the cold pressing process. Figure 2 This is the assembly method of graphite support, silicon particles and pressed green body in the existing gas phase siliconization process. Silicon particles are spread on a graphite support plate of the same shape as the pressed green body, and then the pressed green body is placed on the silicon particles. As the temperature rises, the silicon particles turn into silicon vapor and enter the pores of the green body. This gas phase siliconization method has the following disadvantages:

[0007] 1. During the siliconizing reaction, the highest temperature of the furnace is between 1550℃ and 1650℃. At this time, the graphite support plates supported on both sides are prone to deformation and cracking under the action of high temperature, which leads to the inability to fully bear the weight of the siliconized blank, causing the siliconized blank to deform and crack, reducing the yield.

[0008] 2. Although the graphite support plate is coated with BN powder for protection during use, when it comes into contact with silicon vapor, the silicon vapor will enter the pores of the graphite support plate and react with the graphite. The amount of silicon particles is difficult to control, resulting in poor stability of the production process.

[0009] 3. When using the single-sided vapor phase siliconization process, it is easy to cause insufficient siliconization of the blank. The surface in contact with the silicon particles is completely siliconized, which blocks the siliconization channel. The surface that is not in contact with the silicon particles is not completely siliconized. The graphite support plate is an upward convex arc. When the silicon particles are assembled, the amount of silicon particles around the blank is less than that in the middle, which makes it difficult to fully react around the blank, resulting in cracks on the side of the sample and reducing the yield rate.

[0010] 4. As the furnace heats up, the reaction between carbon and silicon continues. After the carbon-silicon reaction is complete, the excess silicon will fill the interior of the sample. The process from melting to evaporation of silicon takes 5-8 hours. During this process, the silicon vapor will first contact the sample and then fill the entire furnace. The carbon-silicon reaction rate will slow down at the end of the reaction. The silicon vapor that does not react in time may be pumped away by the vacuum pump, causing damage to the vacuum pump system and waste of resources.

[0011] 5. When using support plates as siliconizing supports, they can only be placed in a single layer at the bottom of the furnace, wasting the space in the height direction of the furnace. Large crucibles need to be purchased to make use of the space at the height of the furnace. However, large crucibles are very heavy and may cause danger due to careless operation when loading the furnace, increasing production costs and risks to personnel.

[0012] In order to solve the problems in the above-mentioned gas phase siliconizing process, make the shield plate blank siliconized completely without deformation and cracking, increase the stability of the production process, reduce the consumption of graphite support parts and improve production efficiency, a shield plate siliconizing reaction fixture is proposed. Utility Model Content

[0013] In view of the deficiencies in the above-mentioned background technology, the utility model proposes a hard support shield plate siliconizing reaction fixture, which solves the problems in the prior art that the support plate of the siliconizing reaction fixture is easy to deform, the siliconizing sample yield is low, and the silicon vapor utilization rate is insufficient.

[0014] The technical solution of the utility model is implemented as follows: a hard support shield plate siliconizing reaction fixture comprises a sagger, a body groove for placing a body is provided in the sagger, a siliconizing groove is provided at the bottom of the body groove, and a vent hole connected to the body groove is provided on the side wall of the sagger.

[0015] Further preferably, the air holes include air hole 1 and air hole 2, and the air hole 1 and the air hole 2 are respectively arranged on the upper and lower sides of the sagger.

[0016] Further preferably, at least one pair of supporting columns is installed at the bottom of the sagger.

[0017] Further preferably, a detachable cover plate is provided on the sagger.

[0018] Further preferably, at least one air vent three is provided on the cover plate.

[0019] Further preferably, the air hole three is a strip-shaped hole.

[0020] Further preferably, the bottom of the blank groove is a concave curved surface corresponding to the shape of the blank.

[0021] Further preferably, the blank groove comprises a rectangular groove and a trapezoidal groove, the rectangular groove is connected to the trapezoidal groove, and a rounded transition is formed at the connection between the rectangular groove and the trapezoidal groove.

[0022] Further preferably, the distance between the side wall of the blank groove and the blank is 0.5-10 mm.

[0023] Further preferably, the siliconizing grooves include a plurality of uniformly arranged transverse grooves and a plurality of uniformly arranged vertical grooves, and the plurality of transverse grooves are connected to the plurality of vertical grooves and are grid-shaped grooves.

[0024] The beneficial effects of the utility model are:

[0025] 1. The green body sample is placed in the green body groove, which can be used to support the green body sample. A siliconizing groove is set at the bottom of the green body groove to realize siliconizing on both sides of the upper and lower sides of the green body. Air holes are set on the sagger to ensure the discharge of excess silicon vapor, which solves the problems of easy deformation of the support plate of the siliconizing reaction fixture, low yield of siliconizing samples, and insufficient utilization of silicon vapor in the prior art.

[0026] 2. The cover plate can increase the amount of silicon vapor around the green body sample, and some of the excess silicon vapor can be discharged from the vent hole after the reaction is completed. The siliconizing reaction fixtures can be stacked together to make full use of the furnace height. The existence of the cover plate and the column facilitates the placement of other reaction siliconizing fixtures, which can increase the loading capacity of the siliconizing reaction fixtures in the vacuum reactor furnace and improve production efficiency.

[0027] 3. The mesh groove set under the green body groove can be used to place silicon particles to change the single-layer siliconization process into a double-layer process, avoiding the phenomenon of incomplete siliconization caused by blocking the siliconization channel after the single-layer reaction is complete. The green body groove of a certain depth can make the amount of silicon particles around the green body sample and the amount of silicon particles in the middle of the green body sample consistent during siliconization, so that the reaction around the green body sample is consistent with that in the middle. During the reaction process, the sagger as a whole is not easily deformed by temperature and can provide strong hard support. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present utility model, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 It is the shape of the blank after the cold pressing process.

[0030] Figure 2 The invention relates to an assembly method of a graphite support, silicon particles and a pressed green body in an existing gas phase siliconizing process.

[0031] Figure 3 It is a structural schematic diagram of the sagger of the utility model.

[0032] Figure 4 It is a structural schematic diagram of the cover plate of the utility model.

[0033] Figure 5 This is a schematic diagram of the coordination between the sagger and the cover plate.

[0034] In the figure: 1. sagger; 2. upper cover plate; 3. air vents; 4. columns; 5. blank groove; 6. mesh groove. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0036] like Figures 3-5 As shown, in Example 1, a hard support shield plate siliconizing reaction fixture comprises a sagger 1, a body groove 5 for placing a body is provided in the sagger 1, a siliconizing groove 6 is provided at the bottom of the body groove 5, and a vent hole connected to the body groove 5 is provided on the side wall of the sagger 1. The body sample is placed in the body groove 5, which can be used to support the body sample, and the siliconizing groove 6 is provided at the bottom of the body groove 5 to realize the siliconizing of the upper and lower sides of the body, and the vent hole is provided on the sagger 1 to ensure the discharge of excess silicon vapor, which solves the problems of easy deformation of the support plate of the siliconizing reaction fixture in the prior art, low yield of siliconized samples, and insufficient utilization of silicon vapor.

[0037] Specifically, the sagger 1 of the siliconizing reaction fixture is used to place the degreased green body during the sintering process. The green body groove 5 is completely consistent with the curvature of the green body sample, and the shield plate can be directly placed in the middle position when placing it. The mesh groove 6 is used to place silicon particles for siliconizing. After calculating the required amount of silicon particles, it is divided into two parts in proportion. One part is evenly sprinkled into the mesh groove 6 and the other part covers the green body sample to achieve double-layer siliconizing.

[0038] In the present embodiment, the air holes include air holes 1 3 and air holes 2 7, and the air holes 1 3 and air holes 2 7 are respectively arranged on the upper and lower sides of the sagger 1. At least one pair of columns 4 for support is installed at the bottom of the sagger 1. The columns 4 are four columns 4 evenly arranged at four corners, and the columns 4 are used for ventilation of the cover plate 2 on which the sagger 1 is stacked. A detachable cover plate 2 is provided on the sagger 1. The presence of the cover plate 2 and the columns 4 facilitates the placement of other reactive siliconizing jigs, which can increase the loading capacity of the siliconizing reaction jigs in the furnace of the vacuum reactor and improve production efficiency. At least one air hole 3 8 is provided on the cover plate 2, and the air hole 3 8 is a strip hole. The cover plate 2 can increase the amount of silicon vapor around the green body sample, and some excess silicon vapor can be discharged from the air holes after the reaction is completed. The siliconizing reaction jigs can be stacked together to make full use of the furnace height.

[0039] like Figures 3-5As shown, Example 2 is a siliconizing reaction jig for a hard support shield, wherein the bottom of the blank groove 5 is a concave curved surface corresponding to the shape of the blank. The blank groove 5 includes a rectangular groove and a trapezoidal groove, the rectangular groove is connected to the trapezoidal groove, and the rectangular groove and the trapezoidal groove are connected with a rounded transition at the connection. The distance between the side wall of the blank groove 5 and the blank is 0.5~10mm. Preferably, the distance between the blank groove 5 and the blank is 5mm. The siliconizing groove 6 includes a number of uniformly arranged transverse grooves and a number of uniformly arranged vertical grooves, and the number of transverse grooves are connected to the number of vertical grooves and are grid-like grooves. The bottom of the grid-like groove is a curved surface parallel to the concave curved surface, ensuring that the distance between the bottom of the grid-like groove and the bottom of the blank groove 5 is the same. The blank groove 5 arranged inside the sagger 1 can stably place the blank in the blank groove 5, and the mesh groove arranged below the blank groove 5 can place silicon particles to change the single-layer siliconizing process into a double-layer, avoiding the blocking of the siliconizing channel after the single-layer reaction is complete, resulting in incomplete siliconizing. The green body groove 5 of a certain depth can make the amount of silicon particles around the green body sample and the amount of silicon particles in the middle of the green body sample consistent during siliconization, so that the reaction around the green body sample is consistent with that in the middle. During the reaction process, the sagger 1 as a whole is not easily deformed by temperature and can provide strong hard support.

[0040] The other structures are the same as those in Example 1.

[0041] Specifically, the sagger 1 has a body groove 5 on the bottom surface that is completely in line with the curvature of the body sample, a mesh groove 6 is provided below the body groove 5, a column 4 is provided at the bottom of the sagger 1, and a cover plate 2 is placed on the sagger 1. The sagger 1 is an integral hard support, which is stronger than a single-layer support plate. The body groove 5 is provided in the sagger 1, so that the thickness of the silicon particles around the body and the silicon particles in the middle can be kept consistent, so that the body sample is fully siliconized around and is not prone to cracking due to incomplete reaction; a mesh groove 6 is opened on the body groove 5, and a certain amount of silicon particles can be loaded into the mesh groove 6, and the amount of silicon is determined by the groove depth, and the groove depth can be customized. Then the body sample is placed in the sagger 1, and the silicon particles continue to be covered on the body sample. The double-layer siliconization can make up for the uneven siliconization of the upper and lower surfaces caused by the single-layer siliconization. The cover plate 2 is placed on the sagger 1. The existence of the cover plate 2 can increase the silicon vapor pressure around the blank during the siliconizing process, making the siliconizing reaction more complete. After the reaction is complete, it is also convenient for excess silicon vapor to be discharged from the vent hole 3. Another set of siliconizing reaction jigs can be placed on the cover plate 2. Stacking can increase the utilization of the height space of the vacuum furnace and increase production efficiency.

[0042] like Figures 3-5As shown in Example 3, a hard-support shield plate siliconizing reaction jig includes a sagger, the bottom surface of the inner part of the sagger is in contact with the curvature of the shield plate, and the outer bottom surface is provided with columns; the inside of the sagger is provided with a blank groove, the bottom of the blank groove is provided with a mesh groove, the mesh groove is convenient for placing silicon particles, and a fence is provided around it, the fence is provided with air holes, and the outside is provided with columns. A cover plate has openings on it, and the cover plate is provided with air holes. It can prevent the bulletproof plug from cracking and deforming due to problems with the support during the siliconizing process. The fence can make the amount of silicon particles around the blank consistent with that in the middle, and change the single-layer siliconizing to double-layer siliconizing, making up for the shortcomings of the single-layer siliconizing process. The same siliconizing reaction jig can be stacked together for use, which improves the utilization of the space in the height direction of the furnace.

[0043] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A siliconizing reaction jig for a hard support shield, characterized in that: The sagger (1) comprises a blank groove (5) for placing blanks, a siliconizing groove (6) is provided at the bottom of the blank groove (5), and a vent hole communicating with the blank groove (5) is provided on the side wall of the sagger (1).

2. The hard support shield plate siliconizing reaction jig according to claim 1, characterized in that: The air holes include air hole one (3) and air hole two (7), and the air hole one (3) and the air hole two (7) are respectively arranged on the upper and lower sides of the sagger (1).

3. The hard support shield plate siliconizing reaction jig according to claim 1 or 2, characterized in that: At least one pair of supporting columns (4) is installed at the bottom of the sagger (1).

4. The hard support shield plate siliconizing reaction jig according to claim 3, characterized in that: The sagger (1) is provided with a detachable cover plate (2).

5. The hard support shield plate siliconizing reaction jig according to claim 4, characterized in that: The cover plate (2) is provided with at least one air vent three (8).

6. The hard support shield plate siliconizing reaction jig according to claim 5, characterized in that: The ventilation hole three (8) is a strip-shaped hole.

7. The hard support shield plate siliconizing reaction fixture according to any one of claims 1, 2, 4 to 6, characterized in that: The bottom of the blank groove (5) is a concave curved surface corresponding to the shape of the blank.

8. The hard support shield plate siliconizing reaction jig according to claim 7, characterized in that: The blank groove (5) comprises a rectangular groove and a trapezoidal groove, the rectangular groove is connected to the trapezoidal groove, and a rounded transition is formed at the connection between the rectangular groove and the trapezoidal groove.

9. The siliconizing reaction jig for the hard support shield according to claim 8, characterized in that: The distance between the side wall of the green body groove (5) and the green body is 0.5-10 mm.

10. The hard support shield plate siliconizing reaction jig according to claim 9, characterized in that: The siliconizing grooves (6) comprise a plurality of evenly arranged transverse grooves and a plurality of evenly arranged vertical grooves, wherein the plurality of transverse grooves are connected to the plurality of vertical grooves and are grid-shaped grooves.

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