Gas supply device for silicon dioxide low-temperature deposition

Abstract

The utility model discloses a gas supply device for low-temperature deposition of silicon dioxide, which belongs to the technical field of low-temperature deposition and comprises a gas pipe, and a plurality of first exhaust pipes, second exhaust pipes, third exhaust pipes and fourth exhaust pipes are fixed on the outer side of the gas pipe. Diffusion heads are fixed to the lower end of the first exhaust pipe and the lower ends of the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe correspondingly, a moving cylinder is further slidably connected to the outer side of the air pipe, two first supports are fixed to the outer side of the moving cylinder, and guide rods are slidably connected to the inner sides of the two first supports correspondingly. A second support is fixed to the upper end of the guide rod, one end of the second support is fixedly connected with the outer side of the air pipe, and a third support is further fixed to the outer side of the moving cylinder. According to the gas spraying device, the coverage range of gas spraying can be adjusted, so that the requirement for vapor deposition of a small number of substrates is met, and waste of gas is avoided.

Description

Technical Field

[0001] The utility model belongs to the technical field of low-temperature deposition, and more specifically, particularly relates to a gas supply device for low-temperature deposition of silicon dioxide. Background Art

[0002] Chemical vapor deposition refers to the process of introducing gaseous reactants containing thin film elements or vapor of liquid reactants and other gases required for the reaction into a reaction chamber, causing a chemical reaction on the surface of a substrate to form a thin film. In the existing gas supply device for low-temperature deposition of silicon dioxide, gas is ejected through a gas pipe and covers the substrate on the base plate, and a chemical reaction occurs on the surface of the substrate to form a silicon dioxide film. Since the ejection range cannot be adjusted, it is easy to cause gas waste when performing vapor deposition on a small amount of substrates. Therefore, a gas supply device for low-temperature deposition of silicon dioxide is proposed. Utility Model Content

[0003] In view of the deficiencies in the prior art, the utility model provides a gas supply device for low-temperature deposition of silicon dioxide, which can adjust the coverage range of the gas jet to solve the problem raised in the above background technology that the gas jet range cannot be adjusted, which easily causes gas waste when performing vapor deposition on a small amount of substrates.

[0004] To achieve the above purpose, the utility model is implemented through the following technical solutions: an air supply device for low-temperature deposition of silicon dioxide, comprising an air pipe, a plurality of first exhaust pipes, a second exhaust pipe, a third exhaust pipe and a fourth exhaust pipe are fixed to the outside of the air pipe, a diffusion head is fixed to the lower end of the first exhaust pipe and the lower ends of the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe, a moving cylinder is slidably connected to the outside of the air pipe, two first supports are fixed to the outside of the moving cylinder, guide rods are slidably connected to the inner sides of the two first supports, and a diffuser is fixed to the upper end of the guide rod. A second support, one end of the second support is fixedly connected to the outside of the trachea, a third support is also fixed to the outside of the movable cylinder, the inner side of the third support is slidably connected with a screw rod, the outer side of the screw rod is rotatably connected with a fourth support, one end of the fourth support is fixedly connected to the outside of the trachea, two connecting grooves are also provided on the outside of the trachea, the inner side of the connecting grooves is slidably connected with a connecting block, one side of the two connecting blocks are fixedly connected to the inner side of the movable cylinder, a movable cylinder is fixed between the two connecting blocks, and the outer side of the movable cylinder is slidably connected to the inner side of the trachea.

[0005] As a preferred technical solution of the present utility model, the lower end of the first exhaust pipe is on the same horizontal plane as the lower ends of the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe.

[0006] As a preferred technical solution of the present utility model, the first exhaust pipe is arranged in a concentric circle structure with the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe.

[0007] As a preferred technical solution of the utility model, the number of the first exhaust pipes is less than the number of the second exhaust pipes, the number of the second exhaust pipes is less than the number of the third exhaust pipes, and the number of the third exhaust pipes is less than the number of the fourth exhaust pipes.

[0008] As a preferred technical solution of the present utility model, the interior of the first exhaust pipe is connected to the interior of the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe, and the interior of the air pipe.

[0009] As a preferred technical solution of the present utility model, the heights of the upper ends of the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe are successively increased.

[0010] As a preferred technical solution of the utility model, the screw rod is parallel to the guide rod.

[0011] The utility model provides a gas supply device for low-temperature deposition of silicon dioxide, which has the following beneficial effects:

[0012] 1. The gas supply device for low-temperature deposition of silicon dioxide sequentially isolates the fourth exhaust pipe, the third exhaust pipe and the second exhaust pipe. Since the second exhaust pipe, the third exhaust pipe and the fourth exhaust pipe are arranged in a concentric circle structure, the coverage of the gas jet is gradually reduced. Through the above process, the coverage of the gas jet can be adjusted to meet the needs of performing vapor deposition of a small amount of substrates and avoid gas waste.

[0013] 2. The gas supply device for low-temperature deposition of silicon dioxide has a reasonable and compact structure design and good use effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The utility model is a schematic diagram of the overall structure of a gas supply device for low-temperature deposition of silicon dioxide.

[0015] Figure 2 The utility model is a schematic diagram of the cross section and disassembled structure of a gas supply device for low-temperature deposition of silicon dioxide.

[0016] Figure 3 The utility model is a gas supply device for low temperature deposition of silicon dioxide Figure 2 A is an enlarged schematic diagram.

[0017] Figure 4 The utility model is a gas supply device for low temperature deposition of silicon dioxide Figure 2 The enlarged schematic diagram of point B in FIG.

[0018] In the figure: 1, air pipe; 2, first exhaust pipe; 3, second exhaust pipe; 4, third exhaust pipe; 5, fourth exhaust pipe; 6, diffusion head; 7, movable cylinder; 8, first support; 9, guide rod; 10, second support; 11, third support; 12, screw rod; 13, fourth support; 14, connecting groove; 15, connecting block; 16, movable cylinder. DETAILED DESCRIPTION

[0019] The following is a further detailed description of the implementation of the present invention in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but cannot be used to limit the scope of the present invention.

[0020] In the description of the present invention, unless otherwise specified, "multiple" means two or more; the terms "upper", "lower", "left", "right", "inner", "outer", "front end", "rear end", "head", "tail" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third" and the like are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0021] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0022] See also Figures 1 to 4The utility model provides a technical solution: a gas supply device for low-temperature deposition of silicon dioxide, comprising an air pipe 1, a plurality of first exhaust pipes 2, a second exhaust pipe 3, a third exhaust pipe 4 and a fourth exhaust pipe 5 are fixed on the outer side of the air pipe 1, a diffusion head 6 is fixed to the lower end of the first exhaust pipe 2 and the lower ends of the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5, a moving cylinder 7 is also slidably connected to the outer side of the air pipe 1, two first supports 8 are fixed to the outer side of the moving cylinder 7, the inner sides of the two first supports 8 are slidably connected to guide rods 9, a second support 10 is fixed to the upper end of the guide rod 9, one end of the second support 10 is fixedly connected to the outer side of the air pipe 1, a third support 11 is also fixed to the outer side of the moving cylinder 7, a screw rod 12 is slidably connected to the inner side of the third support 11, a fourth support 13 is rotatably connected to the outer side of the screw rod 12, one end of the fourth support 13 is fixedly connected to the outer side of the air pipe 1, and two connecting grooves 14 are also provided on the outer side of the air pipe 1. A connecting block 15 is slidably connected to the inner side of the connecting groove 14, one side of the two connecting blocks 15 is fixedly connected to the inner side of the moving cylinder 7, a movable cylinder 16 is fixed between the two connecting blocks 15, the outer side of the movable cylinder 16 is slidably connected to the inner side of the air pipe 1, the lower end of the first exhaust pipe 2 and the lower ends of the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are all on the same horizontal plane, the first exhaust pipe 2 and the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are arranged in a concentric circle structure, the number of the first exhaust pipe 2 is less than the number of the second exhaust pipe 3, the number of the second exhaust pipe 3 is less than the number of the third exhaust pipe 4, the number of the third exhaust pipe 4 is less than the number of the fourth exhaust pipe 5, the interior of the first exhaust pipe 2 and the interiors of the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are all connected to the interior of the air pipe 1, the upper ends of the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are successively increased in height, and the screw rod 12 is parallel to the guide rod 9;

[0023] The gas passes through the air pipe 1 and flows into the first exhaust pipe 2, the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5, so that the diffusion head 6 at the lower end of the first exhaust pipe 2, the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 is diffused, and the screw rod 12 is rotated by external power, and the screw rod 12 drives the movable cylinder 7 to move downward through the third support, and the movable cylinder 7 drives the movable cylinder 16 downward through the connecting block 15. Because the upper end heights of the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are successively increased, the passages between the fourth exhaust pipe 5, the third exhaust pipe 4 and the second exhaust pipe 3 and the air pipe 1 are successively blocked, thereby cutting off the fourth exhaust pipe 5, the third exhaust pipe 4 and the second exhaust pipe 3. Since the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are arranged in a concentric circle structure, the coverage range of the jet is gradually reduced. Through the above process, the coverage range of the jet can be adjusted, thereby meeting the needs of performing vapor deposition of a small amount of substrates and avoiding gas waste.

[0024] Specific usage and function of this embodiment: In the utility model, the gas passes through the air pipe 1 and flows into the first exhaust pipe 2, the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5, so that the diffusion head 6 at the lower end of the first exhaust pipe 2, the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 is diffused, and the screw rod 12 is rotated by external power, and the screw rod 12 drives the moving cylinder 7 to move downward through the third support, and the moving cylinder 7 drives the movable cylinder 16 to move downward through the connecting block 15. Since the upper end heights of the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are successively increased, the passages between the fourth exhaust pipe 5, the third exhaust pipe 4 and the second exhaust pipe 3 and the air pipe 1 are blocked in turn, thereby cutting off the fourth exhaust pipe 5, the third exhaust pipe 4 and the second exhaust pipe 3. Since the second exhaust pipe 3, the third exhaust pipe 4 and the fourth exhaust pipe 5 are arranged in a concentric circle structure, the coverage of the jet is gradually reduced.

[0025] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A gas supply device for low-temperature deposition of silicon dioxide, comprising a gas pipe (1), characterized in that: A plurality of first exhaust pipes (2), a second exhaust pipe (3), a third exhaust pipe (4) and a fourth exhaust pipe (5) are fixed to the outside of the air pipe (1); a diffusion head (6) is fixed to the lower end of the first exhaust pipe (2) and the lower ends of the second exhaust pipe (3), the third exhaust pipe (4) and the fourth exhaust pipe (5); a moving cylinder (7) is also slidably connected to the outside of the air pipe (1); two first supports (8) are fixed to the outside of the moving cylinder (7); guide rods (9) are slidably connected to the inner sides of the two first supports (8); a second support (10) is fixed to the upper end of the guide rod (9); one end of the second support (10) is fixedly connected to the outside of the air pipe (1); A third support (11) is also fixed on the outer side of the movable cylinder (7), and a screw rod (12) is slidably connected to the inner side of the third support (11). The outer side of the screw rod (12) is rotatably connected to a fourth support (13), and one end of the fourth support (13) is fixedly connected to the outer side of the trachea (1). Two connecting grooves (14) are also provided on the outer side of the trachea (1), and a connecting block (15) is slidably connected to the inner side of the connecting groove (14). One side of the two connecting blocks (15) is fixedly connected to the inner side of the movable cylinder (7), and a movable cylinder (16) is fixed between the two connecting blocks (15), and the outer side of the movable cylinder (16) is slidably connected to the inner side of the trachea (1).

2. A gas supply device for low-temperature deposition of silicon dioxide according to claim 1, characterized in that: The lower end of the first exhaust pipe (2) is on the same horizontal plane as the lower ends of the second exhaust pipe (3), the third exhaust pipe (4) and the fourth exhaust pipe (5).

3. The gas supply device for low-temperature deposition of silicon dioxide according to claim 1, characterized in that: The first exhaust pipe (2) is arranged in a concentric circle structure with the second exhaust pipe (3), the third exhaust pipe (4) and the fourth exhaust pipe (5).

4. The gas supply device for low-temperature deposition of silicon dioxide according to claim 1, characterized in that: The number of the first exhaust pipes (2) is less than the number of the second exhaust pipes (3), the number of the second exhaust pipes (3) is less than the number of the third exhaust pipes (4), and the number of the third exhaust pipes (4) is less than the number of the fourth exhaust pipes (5).

5. The gas supply device for low-temperature deposition of silicon dioxide according to claim 1, characterized in that: The interior of the first exhaust pipe (2) and the interiors of the second exhaust pipe (3), the third exhaust pipe (4) and the fourth exhaust pipe (5) are all connected to the interior of the air pipe (1).

6. The gas supply device for low-temperature deposition of silicon dioxide according to claim 1, characterized in that: The heights of the upper ends of the second exhaust pipe (3), the third exhaust pipe (4) and the fourth exhaust pipe (5) increase successively.

7. The gas supply device for low-temperature deposition of silicon dioxide according to claim 1, characterized in that: The screw rod (12) is parallel to the guide rod (9).

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