Single crystal metal wire preparation device

Abstract

A single crystal metal wire preparation device comprises a furnace body with a containing cavity, and a smelting crucible provided with a heater is arranged in the containing cavity; the extension pipe is vertically connected to the lower side of the smelting crucible, the upper end of the extension pipe communicates with the interior of the smelting crucible, and an outlet is formed in the lower end of the extension pipe; the cooling pipe is wound on the lower part of the extension pipe, and the cooling pipe is used for introducing cooling liquid to cool the lower part of the extension pipe; and the traction material receiving mechanism is used for downwards dragging the metal wires growing out of the outlet of the extension pipe. According to the scheme, a large cooling gradient is formed between the upper portion and the lower portion of the extension pipe, after metal raw material molten liquid in the smelting crucible downwards flows into the extension pipe, the metal raw material molten liquid is cooled and grows into a single crystal metal wire, and the single crystal metal wire is pulled out of an outlet of the extension pipe under the action of the traction material collecting mechanism and then wound; and the cooling growth process of the single crystal metal wire is mainly carried out in the extension pipe, so that the single crystal metal wire is not easy to break, the production and processing stability is good, and the yield is high.

Description

Technical Field

[0001] The utility model relates to the technical field of hot melt continuous casting processing equipment, in particular to a single crystal metal wire preparation device. Background Art

[0002] With the rapid development of semiconductor technology and integrated circuit technology, the demand for single crystal metal wires in the fields of electronic devices, high-fidelity audio equipment, and remote communications is increasing. Single crystal metal wires do not have "grain boundaries" between grains, so they have excellent comprehensive performance. For example, copper single crystals have excellent electrical and signal transmission properties, good plastic processing properties, and excellent corrosion resistance. Therefore, they are widely used in the preparation of ultra-fine bonding wires, high-fidelity cables, high-fidelity signal transmission lines, etc. in integrated circuits, and are essential components in high-end electronic devices.

[0003] Affected by the limitations of existing single crystal copper wire production equipment, the single crystal copper wire that can be processed currently is usually a single crystal copper rod with a wire diameter of 6 to 8 mm. When it is necessary to process a wire with a thinner wire diameter, wire breakage often occurs, resulting in a low yield. Utility Model Content

[0004] The utility model aims to provide a single crystal metal wire preparation device which is not easy to break during processing and production and has a high yield rate.

[0005] In order to solve the above problems, the utility model provides a single crystal metal wire preparation device, comprising a furnace body having a cavity, wherein the cavity is provided with:

[0006] A smelting crucible, wherein the smelting crucible is provided with a heater;

[0007] An extension tube, vertically connected to the lower side of the smelting crucible, the upper end of the extension tube is connected to the interior of the smelting crucible and the lower end is provided with an outlet;

[0008] A cooling pipe, wound around the lower part of the extension pipe, the cooling pipe is used to pass a cooling liquid to cool the lower part of the extension pipe;

[0009] The traction and receiving mechanism is located below the outlet of the extension tube and is used for pulling downward the metal wire growing out of the outlet of the extension tube.

[0010] Compared with the prior art, the above scheme connects the upper end of the extension tube to the interior of the melting crucible and winds a cooling tube around the lower part of the extension tube, thereby forming a larger cooling gradient between the upper and lower parts of the extension tube. When the molten metal raw material in the melting crucible flows downward into the extension tube, it is cooled and grown into a single crystal metal wire, and is pulled out from the outlet of the extension tube under the action of the traction and receiving mechanism, and then reeled up. Since the cooling and growth process of the single crystal metal wire mainly takes place inside the extension tube, it is not easy to be broken, and the production and processing stability is good, and the yield rate is high.

[0011] In an improved solution, the interior of the melting crucible is divided into an upper melting zone and a lower insulation zone, and the heater includes a heating coil, a heating resistor and a thermocouple. The heating coil is arranged in the melting zone, and the heating resistor and the thermocouple are both arranged in the insulation zone, so that the metal raw material in the melting zone can be efficiently heated and melted by the heating coil, and the temperature of the metal raw material molten liquid in the insulation zone can be accurately controlled by the heating resistor combined with the thermocouple.

[0012] In an improved solution, the heating coil is used to control the temperature of the smelting zone within a temperature range that fully melts the metal raw material, and the thermocouple is used to measure the temperature of the insulation zone and feedback-adjust the heating resistor so that the temperature of the insulation zone is controlled within the liquid temperature range of the metal raw material melt before single crystal growth.

[0013] In an improved solution, the flow rate of the cooling tube is controlled at 300-1000 mL / min, the coolant in the cooling tube is water and the water temperature is controlled at 20-30°C, thereby ensuring that a suitable cooling gradient is formed between the upper and lower parts of the extension tube, which is beneficial to the solidification growth and forming of single crystal copper.

[0014] In an improved solution, the cooling tube is arranged in a spiral shape, the vertical distance between the cooling tube is 30 to 40 mm, and the distance between the top end of the cooling tube and the upper end of the extension tube is 20 to 40 mm, thereby ensuring that a suitable cooling gradient is formed between the upper and lower parts of the extension tube, which is beneficial to the solidification growth and forming of single crystal copper.

[0015] In an improved solution, the melting crucible is integrally connected to the extension tube, so that the transition between the upper end of the extension tube and the melting crucible is smooth and the temperature difference is small.

[0016] In an improved solution, the lower side of the melting crucible is covered with a heat insulation plate, and the heat insulation plate is provided with an avoidance hole for the extension tube to pass through, so as to prevent the heat of the melting crucible from transferring downward to affect the extension tube.

[0017] In an improved scheme, the furnace body is provided with a vacuum pump and a gas filling tube, the vacuum pump is used to pump the cavity into a vacuum state, and the gas filling tube is used to fill the cavity with inert gas, so that after the cavity is pumped into a vacuum state by the vacuum pump, inert gas is filled into the cavity through the gas filling tube, thereby protecting the molten metal raw material in the melting crucible or the single crystal metal wire pulled out from the outlet of the extension tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the structure of a single crystal metal wire preparation device.

[0019] Description of reference numerals:

[0020] 1. Furnace body; 11. Vacuum pump; 12. Inflating pipe; 2. Melting crucible; 21. Melting area; 22. Insulation area; 3. Extension pipe; 4. Cooling pipe; 5. Traction and receiving mechanism; 6. Heat insulation board. DETAILED DESCRIPTION

[0021] It should be understood by those skilled in the art that the following embodiments are only used to explain the technical principles of the embodiments of the present application and are not intended to limit the protection scope of the embodiments of the present application. Those skilled in the art may make adjustments to them as needed to adapt to specific application scenarios.

[0022] In the description of the following embodiments, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of this application can be understood according to specific circumstances.

[0023] In the embodiments of the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0024] The present application is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0025] See also Figure 1The embodiment of the utility model provides a single crystal metal wire preparation device, comprising a furnace body 1 having a cavity, wherein the cavity is provided with:

[0026] A smelting crucible 2, wherein the smelting crucible 2 is provided with a heater;

[0027] An extension tube 3 is vertically connected to the lower side of the melting crucible 2, the upper end of the extension tube 3 is connected to the inside of the melting crucible 2 and the lower end is provided with an outlet;

[0028] A cooling pipe 4 is wound around the lower part of the extension pipe 3, and the cooling pipe 4 is used to pass a cooling liquid to cool the lower part of the extension pipe 3;

[0029] The traction and receiving mechanism 5 is located below the outlet of the extension tube 3 and is used for pulling the metal wire growing out of the outlet of the extension tube 3 downward.

[0030] The above scheme forms a large cooling gradient between the upper and lower parts of the extension tube 3 by connecting the upper end of the extension tube 3 to the inside of the melting crucible 2 and winding the cooling tube 4 around the lower part of the extension tube 3. When the molten metal raw material in the melting crucible 2 flows downward into the extension tube 3, it is cooled and grown into a single crystal metal wire, and is pulled out from the outlet of the extension tube 3 under the action of the traction and receiving mechanism 5, and then reeled up; and since the cooling and growth process of the single crystal metal wire is mainly inside the extension tube 3, it is not easy to be broken, and the production and processing stability is good, and the yield rate is high. According to actual tests, this embodiment can guarantee a high yield rate when processing single crystal metal wires with a wire diameter of 3 to 8 mm, and the quality is stable and reliable.

[0031] It should also be noted that the traction and material receiving mechanism 5 referred to in this embodiment belongs to the prior art. As long as it can pull the metal wire growing from the outlet of the extension tube 3 downward, the specific structure will not be repeated.

[0032] The heating coil is used to control the temperature of the smelting zone 21 within the temperature range that fully melts the metal raw material. The thermocouple is used to measure the temperature of the insulation zone 22 and feedback-adjust the heating resistor so that the temperature of the insulation zone 22 is controlled within the liquid temperature range of the metal raw material before single crystal growth.

[0033] In this embodiment, the interior of the melting crucible 2 is divided into an upper melting zone 21 and a lower insulation zone 22. The heater includes a heating coil, a heating resistor and a thermocouple. The heating coil is arranged in the melting zone 21, and the heating resistor and the thermocouple are arranged in the insulation zone 22. The heating coil is used to control the temperature of the melting zone 21 within a temperature range that fully melts the metal raw material. The thermocouple is used to measure the temperature of the insulation zone 22 and feedback-adjust the heating resistor so that the temperature of the insulation zone 22 is controlled within the liquid temperature range of the metal raw material molten liquid before the single crystal growth.

[0034] The temperature of the smelting zone 21 and the temperature of the holding zone 22 can be set as needed. In this embodiment, a single crystal copper wire is to be prepared. After analysis and experiments, it is found that when the heating coil controls the temperature of the smelting zone 21 at 1140-1150°C and the thermocouple controls the temperature of the holding zone 22 at 1104-1110°C, the quality of the produced single crystal copper wire is relatively stable.

[0035] The flow rate of the cooling tube 4 is controlled at 300-1000 mL / min, the coolant in the cooling tube 4 is water and the water temperature is controlled at 20-30°C, thereby ensuring that a suitable cooling gradient is formed between the upper and lower parts of the extension tube 3, which is beneficial to the solidification growth of the single crystal copper.

[0036] Furthermore, the cooling tube 4 is arranged in a spiral shape, the vertical distance of the cooling tube 4 is 30 to 40 mm, and the distance between the top of the cooling tube 4 and the upper end of the extension tube 3 is 20 to 40 mm, thereby ensuring that a suitable cooling gradient is formed between the upper and lower parts of the extension tube 3, which is beneficial to the solidification growth and forming of the single crystal copper.

[0037] In this embodiment, the melting crucible 2 is connected to the extension tube 3 in an integrated manner, so that the transition between the upper end of the extension tube 3 and the melting crucible 2 is smooth and the temperature difference is small.

[0038] In this embodiment, the furnace body 1 is provided with a vacuum pump 11 and a gas filling pipe 12. The vacuum pump 11 is used to pump the cavity into a vacuum state, and the gas filling pipe 12 is used to fill the cavity with an inert gas. The inert gas is preferably argon. After the cavity is pumped into a vacuum state by the vacuum pump 11, the inert gas is filled into the cavity through the gas filling pipe 12 to protect the molten metal raw material in the melting crucible 2 or the single crystal metal wire pulled out from the outlet of the extension tube 3.

[0039] As an improvement to this embodiment, the lower side of the melting crucible 2 is covered with an insulation board 6 made of insulation material. The insulation board 6 is provided with an avoidance hole for the extension tube 3 to pass through, thereby preventing the heat of the melting crucible 2 from transferring downward to affect the extension tube 3.

[0040] The specific preparation process is:

[0041] 1. Lead wire: Connect one end of the single crystal copper wire rod to the traction and receiving mechanism 5, and the other end passes through the extension tube 3 from bottom to top and is inserted into the melting crucible 2 as the traction wire of the single crystal copper metal wire.

[0042] 2. Operation: First, start the vacuum pump 11 to evacuate the cavity. When the vacuum degree reaches the required requirement, close the vacuum valve, open the gas charging pipe 12, and introduce argon gas into the cavity of the furnace body 1 through the gas charging pipe 12 to achieve the argon protection state in the furnace; start the heating coil and thermocouple of the furnace body 1, and after the temperature of the smelting zone 21 and the insulation zone 22 reaches the set value, keep warm for 2-3 hours, and then evacuate the cavity again with the vacuum valve to further purify the molten metal raw material, and then close the vacuum valve, and introduce argon gas into the cavity of the furnace body 1 through the gas charging pipe 12 again.

[0043] 3. Start the traction and receiving mechanism 5: When the temperature of the smelting zone 21 and the insulation zone 22 reaches the set value, start the traction and receiving mechanism 5 to start continuous casting at a continuous casting speed of 1-35 mm / min, and finally obtain a single crystal copper wire with stable and uniform surface quality and internal structure.

[0044] It should be noted that, in the description of the present application, the terms "inside", "outside", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. This is merely for the convenience of description and does not indicate or imply that the device or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present application. All directional indications (such as up, down, left, right, front, back, inside, and outside) are only used to explain the relative positional relationship, movement, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0045] In the description of the present application, the description with reference to the terms "one embodiment", "some embodiments", "in the present embodiment", "specific example", or "some examples" etc. means that the specific features, mechanisms, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, mechanisms, materials or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0046] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A single crystal metal wire preparation device, characterized in that: The invention comprises a furnace body (1) having a cavity, wherein the cavity is provided with: A smelting crucible (2), wherein the smelting crucible (2) is provided with a heater; An extension tube (3) is vertically connected to the lower side of the smelting crucible (2), the upper end of the extension tube (3) is connected to the interior of the smelting crucible (2) and the lower end is provided with an outlet; A cooling pipe (4) is wound around the lower part of the extension pipe (3), and the cooling pipe (4) is used to pass a cooling liquid to cool the lower part of the extension pipe (3); The pulling and collecting mechanism (5) is located below the outlet of the extension tube (3) and is used to pull the metal wire growing out of the outlet of the extension tube (3) downward.

2. The single crystal metal wire preparation device according to claim 1, characterized in that: The interior of the smelting crucible (2) is divided into an upper smelting zone (21) and a lower insulation zone (22); the heater comprises a heating coil, a heating resistor and a thermocouple; the heating coil is arranged in the smelting zone (21); and the heating resistor and the thermocouple are both arranged in the insulation zone (22).

3. The single crystal metal wire preparation device according to claim 2, characterized in that: The heating coil is used to control the temperature of the smelting zone (21) within a temperature range that allows the metal raw material to be fully melted, and the thermocouple is used to measure the temperature of the insulation zone (22) and feedback-adjust the heating resistor so that the temperature of the insulation zone (22) is controlled within the liquid temperature range of the metal raw material molten liquid before single crystal growth.

4. The single crystal metal wire preparation device according to claim 3, characterized in that: The flow rate of the cooling tube (4) is controlled at 300-1000 mL / min, the cooling liquid in the cooling tube (4) is water and the water temperature is controlled at 20-30°C.

5. The single crystal metal wire preparation device according to claim 4, characterized in that: The cooling pipe (4) is arranged in a spiral shape, the vertical distance of the cooling pipe (4) is 30 to 40 mm, and the distance between the top end of the cooling pipe (4) and the upper end of the extension pipe (3) is 20 to 40 mm.

6. The single crystal metal wire preparation device according to claim 1, characterized in that: The smelting crucible (2) is integrally connected to the extension tube (3).

7. The single crystal metal wire preparation device according to claim 1, characterized in that: The lower side of the smelting crucible (2) is covered with a heat insulation plate (6), and the heat insulation plate (6) is provided with an avoidance hole for the extension tube (3) to pass through.

8. A single crystal metal wire preparation device according to any one of claims 1 to 7, characterized in that: The furnace body (1) is provided with a vacuum pump (11) and a gas filling pipe (12); the vacuum pump (11) is used to draw the cavity into a vacuum state; the gas filling pipe (12) is used to fill the cavity with inert gas.

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