Transmission feed network based on W wave band

Abstract

The utility model relates to a transmission feed network based on a W wave band, and belongs to the technical field of microwaves. Comprising a bottom metal substrate, a metal main cavity and an epoxy resin plate FR4 feed plate. The power amplifier chip is sintered on the bottom metal substrate and placed in the metal main cavity, and the epoxy resin board FR4 feed panel is located on the metal main cavity and feeds power to the power amplifier chip from top to bottom through fuzz button spring columns. On the basis of the W-band signal transmission requirement, the characteristic of vertical transmission of the fuzz button is combined, and the feed problem of the W-band power amplifier chip is solved by adopting a feed top-arranged mode. Meanwhile, the large-area metal substrate at the bottom is beneficial to heat dissipation of the power amplifier, and reliability is improved.

Description

Technical Field

[0001] The invention belongs to the field of microwave technology, and in particular relates to a W-band transmission feeding network. Background Art

[0002] As modern transceiver systems become more and more integrated, smaller in size, and more powerful in functionality, the product development cycle is constantly being compressed. Especially in the high frequency band, it is necessary to modularize standard circuits, improve product inheritability, and quickly respond to the overall needs of radar. For W-band power amplifier chips, the power added efficiency is generally low and the heat consumption is high. Therefore, it is necessary to focus on the W-band signal transmission form, active feed network, and device heat dissipation.

[0003] For W-band signal transmission, due to the high frequency band and short wavelength, very high requirements are placed on the processing accuracy and transmission loss of the transmission medium. The traditional Rogers5880 can no longer meet the signal transmission requirements, and a new transmission form needs to be sought to solve the transmission problem of W-band signals. At the same time, due to the high frequency band and short wavelength, new requirements are placed on the transmission cavity, and the cavity needs to be specially designed to avoid the resonance of the cavity affecting the transmission of the main signal.

[0004] For the feed network, the conventional practice is to use a powered insulator. The chip and feed network are located in the upper and lower layers of the cavity respectively. The upper layer is used for RF signal routing to complete the transmission function of high-frequency signals, and the lower layer is used for low-frequency and control signal routing to achieve power modulation and other functions such as bias required by the RF chip. However, this design often needs to avoid multiple signal holes, and the effective use area is very limited, resulting in tight device layout or even impossible to achieve. At the same time, for the transmission output of the component, heat consumption will become the main limiting factor due to the high power and low efficiency of the chip. Summary of the invention

[0005] The technical problems to be solved by the present invention are:

[0006] In order to solve the problems of limited effective use area and difficult layout caused by bottom feeding in the prior art, the present invention provides a W-band transmission feeding network for realizing W-band signal transmission and power amplifier chip feeding.

[0007] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0008] A W-band transmission feeding network, characterized by comprising a bottom metal substrate, a metal main cavity, and an epoxy resin board FR4 feeding board;

[0009] The power amplifier chip is sintered on the bottom metal substrate and placed in the metal main cavity. The epoxy resin board FR4 feeding board is located above the metal main cavity, and feeds the power amplifier chip from top to bottom through the feeding transmission device.

[0010] A further technical solution of the present invention is as follows: the feed transmission device comprises a wool button spring column, a PEEK glass insulator, and a Rogers5880 transition plate;

[0011] The PEEK glass insulator is located in the metal main cavity, and the PEEK glass insulator is wrapped with a button spring column, one end of the button spring column is connected to the epoxy resin board FR4 feed board, and the other end is connected to the input end of the Rogers5880 transition board;

[0012] The Rogers5880 transition board is bonded to the bottom metal substrate and placed in the metal main cavity, and the output end is connected to the power amplifier chip to feed the power amplifier chip.

[0013] A further technical solution of the present invention is as follows: one end of the button spring column passes through a via hole of the epoxy resin board FR4 feed board and is directly welded to the epoxy resin board FR4 feed board, and the other end is connected to the input end of the Rogers5880 transition board by crimping.

[0014] A further technical solution of the present invention is that the output end of the Rogers5880 transition board is connected to the power amplifier chip by bonding.

[0015] A further technical solution of the present invention is that there are multiple wool button spring columns with a hole diameter of 0.3 mm and a spacing of 0.9 mm.

[0016] A further technical solution of the present invention also includes a SiO2 dielectric substrate, which is located on the bottom metal substrate and placed in the metal main cavity, and is used for transmitting radio frequency signals between the power amplifier chip and the outside world.

[0017] A further technical solution of the present invention is as follows: a SiO2 microstrip probe is arranged on the SiO2 dielectric substrate, one end of the SiO2 microstrip probe is connected to the power amplifier chip, and the other end is connected to the microstrip-waveguide probe conversion structure.

[0018] A further technical solution of the present invention is that one end of the SiO2 microstrip probe is connected to the power amplifier chip by bonding.

[0019] A further technical solution of the present invention is that the microstrip-waveguide probe conversion structure comprises a plurality of microstrip lines, each of which has a different length and width, so as to achieve better matching with the output waveguide.

[0020] The beneficial effects of the present invention are:

[0021] The invention provides a W-band transmission feeding network, based on the W-band signal transmission requirements, combined with the characteristics of vertical transmission of the button, and adopts the feeding top-up method to solve the W-band power amplifier chip feeding problem. At the same time, the large-area metal substrate at the bottom is conducive to the heat dissipation of the power amplifier and improves reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings are only for the purpose of illustrating particular embodiments and are not to be considered limiting of the present invention. Like reference symbols denote like components throughout the drawings.

[0023] Figure 1 Schematic diagram of the overall structure of the feeding network based on W-band transmission.

[0024] Figure 2 Cross-sectional diagram of the feeding network based on W-band transmission.

[0025] Figure 3 SiO2 microstrip probe structure diagram.

[0026] 1-bottom metal substrate; 2-metal main cavity; 3-epoxy resin board FR4 feed board; 4-wool button spring column; 5-PEEK glass insulator; 6-Rogers5880 transition board; 7-SiO2 dielectric substrate. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0028] The present invention provides a W-band transmission feeding network, which is used for transmitting a DC feeding signal between upper and lower layers and realizes the feeding requirement for a W-band power amplifier chip.

[0029] like Figure 1-2 As shown, from bottom to top, it includes a bottom metal substrate 1, a metal main cavity 2, and an epoxy resin board FR4 feeding board 3.

[0030] The power amplifier chip is located on the bottom metal substrate 1, and the bottom metal substrate 1 is used for heat dissipation of the power amplifier chip. Rogers5880 transition boards 6 are arranged on both sides of the power amplifier chip, and the output end of the Rogers5880 transition board 6 is connected to the power amplifier chip by bonding.

[0031] A SiO2 dielectric substrate 7 is also provided on the bottom metal substrate 1. The SiO2 dielectric substrate 7 is located at the RF transmission end of the power amplifier chip. A SiO2 microstrip probe is provided on the SiO2 dielectric substrate 7. The SiO2 microstrip probe is connected to the RF transmission end of the power amplifier chip by gold wire bonding. The SiO2 dielectric substrate 7 is connected to the waveguide. In order to better transmit signals with the waveguide, the SiO2 microstrip probe is connected to the microstrip-waveguide probe conversion structure.

[0032] like Figure 3 The figure shows the structure of the microstrip-waveguide probe conversion structure, which includes the first transmission line, the second transmission line, and the third transmission line. The SiO2 microstrip probe is composed of multiple transmission lines, which are matched with the output waveguide to realize the feeding and transmission functions of the W-band signal. The dimensions of each transmission line are shown in Table 2.

[0033] The metal main cavity 2 adopts an anti-resonance design, and a PEEK glass insulator 5 is arranged in the metal main cavity 2. A button spring column 4 is wrapped in the PEEK glass insulator 5. One end of the button spring column 4 passes through a via hole of the epoxy resin board FR4 feed board 3 and is directly welded to the epoxy resin board FR4 feed board 4. The other end is connected to the input end of the Rogers5880 transition board 6 by crimping.

[0034] The dimensions of the individual components are as follows:

[0035] The length a of the metal main cavity 2 is 6.5 mm, the width b is 3.2 mm, and the height h is 2 mm;

[0036] The thickness of the epoxy resin board FR4 feed board 3 is 1 mm;

[0037] The hair button spring column 4 wrapped by the PEEK glass insulator 5 has a diameter of is 0.3mm, and the spacing d is 0.9mm;

[0038] The thickness of the Rogers5880 power transition board 6 is 0.254 mm and the dielectric constant is 2.2;

[0039] The W-band signal is transmitted using the SiO2 dielectric substrate 7, the conductor width w is 0.28 mm, the transmission cavity width a0 is 1 mm, and the height b0 is 0.8 mm.

[0040] The W-band transmission feed network structure of the present invention adopts an assembly process of sintering first and then bonding. During the assembly, the power amplifier chip is first sintered on the bottom metal substrate 1, and the Rogers5880 transition plate 6 is bonded to the bottom metal substrate 1; the epoxy resin board FR4 feed plate 3 is bonded to the metal main cavity 2, and the button spring column 4 is sintered on the metal main cavity 2 with the PEEK glass insulator 5; one end of the button spring column 4 passes through the via hole of the epoxy resin board FR4 feed plate 3 and is directly welded on the epoxy resin board FR4 feed plate 4, and the other end is connected to the Rogers5880 transition plate 6 by crimping; the end of the Rogers5880 transition plate 6 is connected to the power amplifier chip by bonding. The power amplifier RF transmission end is connected to the SiO2 microstrip probe by gold wire bonding, and the microstrip-waveguide probe conversion structure realizes the feeding and transmission functions of the W-band signal.

[0041] The size of the W-band input and output waveguide ports of the present invention adopts a standard form of 2.54 mm×1.27 mm, and the UG387 flange is convenient for connection with a test system.

[0042] Table 1 Feed network recommended parameters

[0043] Unit: mm

[0044]

[0045] Table 2 Recommended parameters for SiO2 probe size

[0046] Unit: mm

[0047]

[0048] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should be included in the protection scope of the present invention.

Claims

1. A W-band transmission feeding network, characterized in that: It comprises a bottom metal substrate (1), a metal main cavity (2), and an epoxy resin board FR4 feed board (3); The power amplifier chip is sintered on the bottom metal substrate (1) and placed in the metal main cavity (2); the epoxy resin board FR4 feeding board (3) is located above the metal main cavity (2) and feeds power to the power amplifier chip from top to bottom through a feeding transmission device.

2. According to claim 1, a W-band transmission feeding network is characterized in that: The power feeding transmission device comprises a button spring column (4), a PEEK glass insulator (5), and a Rogers 5880 transition plate (6); The PEEK glass insulator (5) is located in the metal main cavity (2), and a button spring column (4) is wrapped in the PEEK glass insulator (5). One end of the button spring column (4) is connected to the epoxy resin board FR4 feed board (3), and the other end is connected to the input end of the Rogers5880 transition board (6); The Rogers 5880 transition plate (6) is bonded to the bottom metal substrate (1) and placed in the metal main cavity (2), and the output end is connected to the power amplifier chip to feed the power amplifier chip.

3. According to claim 2, a W-band transmission feeding network is characterized in that: One end of the button spring column (4) passes through a via hole of the epoxy resin board FR4 feed board (3) and is directly welded to the epoxy resin board FR4 feed board (3), and the other end is connected to the input end of the Rogers5880 transition board (6) by means of crimping.

4. According to claim 2, a W-band transmission feeding network is characterized in that: The output end of the Rogers 5880 transition board (6) is connected to the power amplifier chip by bonding.

5. According to the W-band transmission feeding network of claim 2, there are multiple hair button spring columns (4), with an aperture of 0.3 mm and a spacing of 0.9 mm.

6. According to claim 1, a W-band transmission feeding network is characterized in that: It also comprises a SiO2 dielectric substrate (7), which is located on the bottom metal substrate (1) and placed in the metal main cavity (2) and is used for transmitting radio frequency signals between the power amplifier chip and the outside world.

7. A W-band transmission feeding network according to claim 6, characterized in that: A SiO2 microstrip probe is provided on the SiO2 dielectric substrate (7); one end of the SiO2 microstrip probe is connected to the power amplifier chip, and the other end of the SiO2 microstrip probe is connected to the microstrip-waveguide probe conversion structure.

8. According to claim 7, a W-band transmission feeding network is characterized in that: One end of the SiO2 microstrip probe is connected to the power amplifier chip by bonding.

9. The W-band transmission feeding network according to claim 7, characterized in that: The microstrip-waveguide probe conversion structure includes multiple sections of microstrip lines, each section of which has a different length and width, so as to achieve better matching with the output waveguide.

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