Perovskite film processing equipment

Abstract

The utility model discloses perovskite thin film processing equipment, which comprises a main chamber, a bearing table and a conveying device, and is characterized in that the main chamber at least comprises a first gas phase port and a second gas phase port, and the first gas phase port and the second gas phase port are used for providing at least two different substances for the main chamber; the bearing table is used for placing a sample, and the bearing table is arranged on one side opposite to at least one of the first gas phase opening and the second gas phase opening; the conveying device is connected with the bearing table and used for driving the bearing table to move in the main cavity. According to the perovskite thin film processing equipment, the crystal quality of the perovskite thin film can be improved, and the performance of a solar cell device is improved.

Description

Technical Field

[0001] The present application relates to the field of new energy technology, and in particular to a perovskite film processing device. Background Art

[0002] As an important technology in the field of new energy technology, solar cells have entered many fields such as industry, commerce, agriculture, communications, household appliances and public utilities from the military and aerospace fields. Perovskite solar cells are one of the most promising solar cells with development potential. They are high-efficiency, environmentally friendly and low-cost. Perovskite film is the key component that plays an energy conversion role in perovskite solar cells. The quality of the film restricts the photoelectric conversion efficiency of perovskite solar cells. However, the existing perovskite film crystals are of poor quality and are prone to defects, which leads to reduced performance of solar cell devices.

[0003] The above statements are only used to provide background information related to the present application and do not necessarily constitute prior art. Utility Model Content

[0004] The main technical problem solved by the present application is to provide a perovskite film processing device, which can improve the crystal quality of the perovskite film and improve the performance of solar cell devices.

[0005] In order to solve the above technical problems, the technical solution adopted in the present application is: to provide a perovskite thin film processing equipment, including a main chamber, a supporting platform and a conveying device, the main chamber includes at least a first gas phase port and a second gas phase port, the first gas phase port and the second gas phase port are used to provide at least two different substances to the main chamber; the supporting platform is used to place the sample, and the supporting platform is arranged on a side opposite to at least one of the first gas phase port or the second gas phase port; the conveying device is connected to the supporting platform, and is used to drive the supporting platform to move in the main chamber.

[0006] The perovskite film processing equipment of the present application has at least two gas phase ports. When processing the perovskite film, at least two different substances can be provided at the same time to act on the perovskite film at the same time, so as to improve the quality of the perovskite crystal and improve the performance of the solar cell device. Furthermore, the presence of the conveying device can drive the product to move in the main chamber, which is beneficial to the uniformity of the product reaction.

[0007] In one embodiment, the perovskite film processing equipment includes a passivation material atmosphere generating device and a solvent atmosphere generating device. The passivation material atmosphere generating device is connected to the first gas phase port for providing the passivation material to the main chamber; the solvent atmosphere generating device is connected to the second gas phase port for providing the solvent atmosphere to the main chamber. In this embodiment, the perovskite film processing equipment can be used as a perovskite film passivation device to perform passivation treatment on the perovskite film; during the passivation reaction, since the equipment has two gas phase ports, the passivation material and the solvent atmosphere can be provided to the main chamber at the same time. Through the above-mentioned settings, the passivation material can passivate the defects on the surface and inside of the perovskite film, and the presence of the solvent atmosphere can promote the recrystallization of the perovskite film, which is beneficial to optimize the crystallization process and improve the quality of the perovskite crystal.

[0008] In one embodiment, the perovskite film processing equipment includes a perovskite material generating device and a solvent atmosphere generating device, the perovskite material generating device is connected to the first gas phase port, and is used to provide the raw material of the perovskite material to the main chamber; the solvent atmosphere generating device is connected to the second gas phase port, and is used to provide the solvent atmosphere to the main chamber. In this embodiment, the perovskite film processing equipment can be used as a perovskite film preparation equipment to prepare the perovskite film; during the preparation process, because the equipment has two gas phase ports, the raw material of the perovskite material and the solvent atmosphere can be provided to the main chamber at the same time. Through the above-mentioned setting, the presence of the solvent atmosphere can promote the recrystallization of the perovskite film, which is beneficial to improve the quality of the perovskite film and can improve the photoelectric conversion efficiency of the solar cell device.

[0009] In one embodiment, the perovskite thin film processing equipment also includes a sampling transition chamber, which is connected to the main chamber, and the sampling transition chamber is separated from the main chamber by a sampling transition chamber door, and the sampling transition chamber is used to pre-treat the sample; the conveying device is also used to drive the carrier to move between the main chamber and the sampling transition chamber.

[0010] Through this setting, the sample can be pre-treated in the sample transition chamber, such as providing the sample with an atmosphere consistent with the atmosphere of the main chamber, which is conducive to maintaining the stability of the atmosphere of the main chamber, realizing continuous processing of perovskite films, and improving production efficiency.

[0011] In one embodiment, the perovskite thin film processing equipment also includes a sample-out transition chamber, which is connected to the main chamber and is separated from the main chamber by a sample-out transition chamber door; the conveying device is also used to drive the carrier to move between the main chamber and the sample-out transition chamber.

[0012] Through this setting, the samples that have completed the reaction can be transferred to the sample transition chamber in time, and post-processing such as cooling can be carried out in the sample transition chamber to free up the main chamber for the next wave of reaction, thereby realizing continuous processing of perovskite films and improving production efficiency.

[0013] In one embodiment, the perovskite film processing equipment further includes a ventilation device, which is connected to one or more of the main chamber, the sample inlet transition chamber, and the sample outlet transition chamber to perform atmosphere treatment on one or more of the main chamber, the sample inlet transition chamber, and the sample outlet transition chamber. The ventilation device can assist the first gas phase port and the second gas phase port in regulating the atmosphere of the main chamber, the sample inlet transition chamber, and the sample outlet transition chamber to improve work efficiency.

[0014] In one embodiment, the main chamber further includes a third gas phase port, which is used to provide a third substance to the main chamber. The third gas phase port can provide more functional substances to the main chamber at the same time, which can improve the performance of the perovskite thin film processing equipment from more angles and enrich its functionality.

[0015] In one embodiment, the perovskite thin film processing equipment includes an inert gas generator, which is connected to the third gas phase port and is used to provide an inert gas to the main chamber. Through this arrangement, an inert gas can be provided to the main chamber to assist other gas phase substances (passivation materials, solvents, etc.) in forming a stable and uniform atmosphere environment, while also playing a role in regulating the pressure of the main chamber.

[0016] In one embodiment, the main chamber has a top surface and a bottom surface opposite to each other, the first gas phase port and the second gas phase port are arranged on the top surface, and the supporting platform is arranged on the bottom surface.

[0017] Through the above settings, when the equipment is working, the sample is placed at the bottom and the material from the gas phase port is placed at the top; this is conducive to the downward movement of the material from the gas phase port to better act on the product, thereby improving the quality of the processed product (perovskite film).

[0018] In one embodiment, the main chamber has a top surface and a bottom surface opposite to each other, the first gas phase port and the second gas phase port are arranged on the bottom surface, and the supporting platform is arranged on the top surface.

[0019] The above arrangement is conducive to the upward movement of substances from the gas phase port, which is conducive to improving the uniformity of the atmosphere substances, thereby improving the quality of the processed product (perovskite film).

[0020] In one embodiment, the carrier platform further includes a heating device, which is used to heat the sample on the carrier platform.

[0021] In one embodiment, the perovskite thin film processing equipment further includes a concentration detector, which is connected to the main chamber and is used to detect the concentration of the gas phase substance in the main chamber. The concentration detector can feedback the atmosphere concentration, thereby facilitating the control of the atmosphere environment.

[0022] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 A schematic diagram of the structure of a perovskite thin film processing device according to one or more embodiments of the present application;

[0025] Figure 2 A schematic diagram of the structure of a perovskite thin film processing device according to one or more embodiments of the present application;

[0026] Figure 3 A schematic diagram of a perovskite thin film processing device according to one or more embodiments of the present application;

[0027] Figure 4 A schematic diagram of the structure of a perovskite thin film processing device according to one or more embodiments of the present application;

[0028] Figure 5 for Figure 3 Schematic diagram of the cross-section structure on the CC plane;

[0029] Figure 6 A schematic diagram of a carrier and a sample according to one or more embodiments of the present application;

[0030] Figure 7 A schematic diagram of a support platform and a sample according to one or more embodiments of the present application.

[0031] In the attached figure:

[0032] 100. Perovskite film processing equipment; 10. Main chamber; 10a. Top surface; 10b. Bottom surface; 11. First gas phase port; 12. Second gas phase port; 13. Third gas phase port; 110. Passivation material atmosphere generating device; 111. Perovskite material generating device; 120. Solvent atmosphere generating device; 20. Carrying platform; 30. Conveying device; 40. Sample introduction transition chamber; 41. Sample introduction transition chamber door; 50. Sample exit transition chamber; 51. Sample exit transition chamber door; 60. Perovskite film assembly. DETAILED DESCRIPTION

[0033] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0035] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0036] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0037] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0038] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0039] Perovskite solar cells have become a promising solar cell and a research hotspot due to their outstanding advantages such as high photoelectric conversion efficiency, low cost, and simple production. Perovskite solar cells can be used in lunar rovers, satellite panels, various sensors, detectors, as well as in civilian products such as wearable electronics and automotive power supplies. Perovskite solar cells have become a power source for consumer products in many ways. With the continuous expansion of the application fields of perovskite solar cells and the flexible foldability of perovskite solar cells, the market demand is also constantly expanding.

[0040] In perovskite cells, perovskite films act as light absorption layers that can convert light energy into electrical energy. The quality of perovskite films significantly affects the photoelectric conversion efficiency of perovskite solar cells. High-quality perovskite films have low grain boundaries and defect densities, which can reduce non-radiative recombination of carriers, thereby improving the photoelectric conversion efficiency of perovskite solar cells.

[0041] At present, the preparation of perovskite thin films mainly adopts two methods: gas phase method and liquid phase method. The production cycle of the liquid phase method is fast, but the quality repeatability of the prepared perovskite thin film is low. Usually, the perovskite thin film needs to be surface treated to improve the quality of the film; the gas phase method has high repeatability but slow production cycle. The existing perovskite thin film preparation equipment and processing equipment have relatively single functions, which is not conducive to improving production efficiency.

[0042] In order to solve the above technical problems, the present application provides a perovskite film processing device. Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of a perovskite thin film processing device according to one or more embodiments of the present application. Figure 2 The schematic diagram of the structure of the perovskite thin film processing equipment of one or more embodiments of the present application. The perovskite thin film processing equipment 100 includes a main chamber 10, a carrier 20 and a conveying device 30. The main chamber 10 includes at least a first gas phase port 11 and a second gas phase port 12. The first gas phase port 11 and the second gas phase port 12 are used to provide at least two different substances to the main chamber 10; the carrier 20 is used to place the sample, and the carrier 20 is arranged opposite to at least one of the first gas phase port 11 or the second gas phase port 12; the conveying device 30 is connected to the carrier 20 and is used to drive the carrier 20 to move in the main chamber 10.

[0043] In the perovskite film processing equipment 100, the main chamber 10 is the main place where the perovskite film processing process occurs, and can provide a reaction environment for the perovskite film processing. The main chamber 10 includes at least a first gas phase port 11 and a second gas phase port 12, and the first gas phase port 11 and the second gas phase port 12 are used to provide at least two different substances to the main chamber 10. The substances include raw materials of perovskite materials, gas phase passivation materials, solvent gases, etc. Among them, the raw materials of perovskite materials are used for the preparation of perovskite, and the gas phase passivation materials and solvent gases are used for the surface treatment of perovskite. The setting of the two gas phase ports can provide at least two different gas phase substances at the same time when processing the perovskite film, so as to act on the perovskite film at the same time, which can improve the quality of perovskite crystals and improve the performance of solar cell devices.

[0044] The carrier 20 is used to place the sample, which can be an intermediate semi-finished product of the perovskite film to be prepared, such as a substrate comprising a first electrode and a first charge transport layer; or a perovskite film to be surface treated and optimized. The size of the main chamber 10 and the carrier 20 can be adjusted according to the application scenario requirements, which is convenient for the processing of perovskite films of different sizes, and can be suitable for processing solar cell modules of different sizes. The carrier 20 is arranged on a side opposite to at least one of the first gas phase port 11 or the second gas phase port 12, which means that the side where the carrier 20 is located is opposite to the side where at least one of the first gas phase port 11 or the second gas phase port 12 is located, but in the vertical direction, it is not required that the carrier 20 is always directly opposite to at least one of the first gas phase port 11 or the second gas phase port 12. According to actual needs, the relative position of the carrier 20 and at least one of the first gas phase port 11 or the second gas phase port 12 in the vertical direction can be adjusted. When the carrier 20 is directly opposite to at least one of the first gas phase port 11 or the second gas phase port 12, a better deposition effect can be obtained, and the gas phase port is moved to a position directly opposite to the carrier 20 by the conveying device 30. The above arrangement is conducive to the deposition of the gas phase substance on the sample and improves the uniformity of the deposition of the gas phase substance.

[0045] The conveying device 30 is connected to the carrier 20, and is used to drive the carrier 20 to move in the main chamber 10. The conveying device 30 can be any structure that performs a conveying function, which is not limited here. In one embodiment, the conveying device 30 includes any one of a conveyor belt and a driving mechanism. The conveying device 30 can speed up the transfer of samples in the perovskite film processing equipment 100, and timely adjust the relative position relationship between the carrier 20 and the first gas phase port 11 and the second gas phase port 12 to meet different functional requirements, which is conducive to speeding up the production rhythm and improving production efficiency. For example, the conveying device 30 can convey the carrier 20 with the sample placed to a position directly opposite to the first gas phase port 11. It is conducive to reducing the distance that the gas phase material needs to move for deposition on the sample surface, thereby accelerating the processing efficiency of the perovskite film.

[0046] The treatment of the perovskite film includes the preparation of the perovskite film and the surface treatment of the perovskite film, and the surface treatment of the perovskite film includes the passivation of the perovskite film and the recrystallization optimization of the perovskite film. The perovskite film treatment device 100 provided in the present application can be used as a multifunctional device, and the application function can be switched as needed, and can be used as a surface treatment device for the perovskite film or as a preparation device for the perovskite film.

[0047] In one embodiment, the perovskite film processing device 100 is a surface treatment device for a perovskite film. In this embodiment, the perovskite film processing device 100 includes a passivation material atmosphere generating device 110 and a solvent atmosphere generating device 120. The passivation material atmosphere generating device 110 is connected to the first gas phase port 11 to provide the passivation material to the main chamber 10; the solvent atmosphere generating device 120 is connected to the second gas phase port 12 to provide the solvent atmosphere to the main chamber 10.

[0048] In one embodiment, the passivation material atmosphere generating device 110 can process the passivation material by heating to obtain a gaseous passivation material, and the gaseous passivation material can enter the main chamber 10 through the first gas phase port 11 and be deposited on the sample surface. Specifically, the passivation material atmosphere generating device 110 includes a heater, which can heat the solid passivation material to convert it into a gaseous state. The passivation material atmosphere generating device 110 can adapt to a variety of passivation materials and reduce the limitation of the solubility of the passivation material to meet the passivation requirements of different perovskite films. Because the heating process of the passivation material atmosphere generating device 110 may affect the reaction temperature environment of the main chamber, the heater of the passivation material atmosphere generating device 110 can be set on a side away from the main chamber.

[0049] In one embodiment, for the passivation material that is not easy to be transformed into a gas phase, the passivation material atmosphere generating device 110 can atomize the liquid passivation material into tiny droplets and then carry them into the main chamber 10 through a carrier gas.

[0050] In one embodiment, the solvent atmosphere generating device 120 can process the solvent by heating to obtain a gaseous solvent. The gaseous solvent can enter the main chamber 10 through the second gas phase port 12 to provide a solvent atmosphere to the main chamber 10 .

[0051] In the above embodiment, the perovskite film processing device 100 is used to perform surface treatment on the perovskite film. The main chamber 10 can provide a relatively stable reaction environment for the perovskite film processing, so that the passivation effect and optimization effect are better, and it has good repeatability and is suitable for large-scale application scenarios.

[0052] During the passivation reaction, because the device has two gas phase ports, the passivation material and solvent atmosphere can be provided to the main chamber at the same time. Through the above settings, the passivation material can passivate the defects on the surface and inside of the perovskite film, thereby reducing the non-radiative recombination of carriers; at the same time, the solvent atmosphere can promote the recrystallization of the surface and interface of the perovskite film, which is beneficial to increase the grain size, thereby optimizing the crystallization process and improving the quality of the perovskite crystal. Therefore, through the above settings, the photoelectric conversion efficiency of the solar cell device can be improved. The solvent atmosphere provided by the solvent atmosphere generating device 120 includes N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), γ-butyrolactone (GBL), N-methylpyrrolidone (NMP), isopropyl alcohol (IPA), etc.

[0053] In one embodiment, the perovskite film processing device 100 is a perovskite film preparation device. In this embodiment, the perovskite film processing device 100 includes a perovskite material generating device 111 and a solvent atmosphere generating device 120, the perovskite material generating device 111 is connected to the first gas phase port 11, and is used to provide the raw material of the perovskite material to the main chamber 10; the solvent atmosphere generating device 120 is connected to the second gas phase port 12, and is used to provide the solvent atmosphere to the main chamber 10.

[0054] In one embodiment, the perovskite material generating device 111 can process the raw material of the perovskite material by heating to obtain the raw material of the gas phase perovskite material, and the raw material of the gas phase perovskite material can enter the main chamber 10 through the first gas phase port 11, and be deposited on the surface of the sample to form a perovskite layer. Specifically, the perovskite material generating device 111 includes a heater, which can heat the raw material of the solid or liquid perovskite material to convert it into a gaseous state. The perovskite material generating device 111 can be adapted to a variety of perovskite materials to meet the preparation requirements of different perovskite films. Because the heating process of the perovskite material generating device 111 may affect the reaction temperature environment of the main chamber, the heater of the perovskite material generating device 111 can be set on a side away from the main chamber.

[0055] In one embodiment, the perovskite material generating device 111 can also form tiny droplets from the precursor solution of the perovskite material, and enter the main chamber 10 through the first gas phase port 11 to be deposited on the sample surface to form a perovskite layer.

[0056] In one embodiment, the solvent atmosphere generating device 120 can process the solvent by heating to obtain a gaseous solvent. The gaseous solvent can enter the main chamber 10 through the second gas phase port 12 to provide a solvent atmosphere to the main chamber 10 .

[0057] In the above embodiment, the perovskite film processing device 100 is used to prepare and optimize the perovskite film. During the preparation process, because the device has two gas phase ports, the raw materials of the perovskite material and the solvent atmosphere can be provided to the main chamber at the same time. Through the above setting, the presence of the solvent atmosphere can promote the recrystallization of the perovskite film, which is beneficial to improve the quality of the perovskite film and can improve the photoelectric conversion efficiency of the solar cell device.

[0058] In one embodiment, the first gas phase port 11 and the second gas phase port 12 may work simultaneously to provide raw materials of the perovskite material and a solvent atmosphere to the main chamber at the same time. During the formation of the perovskite film, the auxiliary effect of the solvent molecules is utilized to promote the recrystallization of the perovskite film, thereby obtaining a higher quality perovskite film.

[0059] In another embodiment, the raw material of the perovskite material may be first provided to the main chamber 10 through the first gas phase port 11 to form a perovskite film on the sample, and then a solvent atmosphere may be provided to the main chamber 10 through the second gas phase port 12 to place the formed perovskite film in the solvent atmosphere. The solvent may promote the recrystallization of the perovskite film, thereby improving the quality of the perovskite film.

[0060] The main chamber 10 can provide a relatively stable reaction environment for the preparation of the perovskite film, so that the prepared perovskite film has a better optimization effect and good repeatability, and can be applied to large-scale application scenarios. At the same time, the production cycle of the perovskite film is faster, which is conducive to improving production efficiency.

[0061] In one embodiment, in the perovskite thin film processing device 100, a heating device is provided at the first gas phase port 11 and the second gas phase port 12, which is used to directly heat the passivation material, the raw material of the perovskite material and the solvent in the gas phase to enter the main chamber 10. At this time, the first gas phase port 11 and the second gas phase port 12 have the function of providing gas phase substances and atmosphere generation.

[0062] In one embodiment, see Figure 4 , Figure 4 The schematic diagram of the structure of the perovskite thin film processing device of one or more embodiments of the present application. In the perovskite thin film processing device 100, the main chamber 10 also includes a third gas phase port 13, and the third gas phase port 13 is used to provide a third substance to the main chamber 10. The setting of the third gas phase port can provide more functional substances to the main chamber at the same time, which can improve the performance of the perovskite thin film processing device from more angles and enrich its functionality.

[0063] In one embodiment, the third substance is any one of a passivation material, a solvent atmosphere, and a raw material of a perovskite material. According to different application requirements, the third substance may be the same as any one of the at least two different substances provided by the first gas phase port 11 and the second gas phase port 12, or may be different from both of the two different substances. In the same case, the rate at which the functional substance enters the main chamber 10 can be accelerated, the production rhythm can be accelerated, and the production efficiency can be improved; in different cases, two different passivation materials, or two different solvent atmospheres, or two different raw materials of perovskite materials can be provided to the main chamber 10, so as to improve the adaptability of the perovskite film processing equipment to the perovskite films with different requirements.

[0064] In one embodiment, the perovskite thin film processing device 100 includes an inert gas generator 130, which is connected to the third gas phase port 13 and is used to provide an inert gas to the main chamber 10. Through this arrangement, an inert gas can be provided to the main chamber 10. The inert gas has stable properties and can assist other gas phase substances (passivation materials, solvents, etc.) to form a stable and uniform atmosphere environment, while also playing a role in regulating the pressure of the main chamber.

[0065] In one embodiment, see Figure 2 In the perovskite thin film processing equipment 100, the main chamber 10 has a top surface 10a and a bottom surface 10b opposite to each other, the first gas phase port 11 and the second gas phase port 12 are arranged on the top surface 10a, and the supporting platform 20 is arranged on the bottom surface 10b.

[0066] Through the above setting, when the equipment is working, the sample to be processed is placed at the bottom and the material from the gas phase port is placed at the top; this is conducive to the downward movement of the material from the gas phase port to better act on the sample, thereby improving the quality of the processed sample (perovskite film).

[0067] In one embodiment, the first gas phase port 11 is used to provide the raw materials of the gas phase passivation material or the gas phase perovskite material to the main chamber 10. Most of these materials are directly transformed from the solid phase to the gas phase. Some molecules have a relatively large density and are relatively "heavy". After becoming gas phase molecules, they tend to fall. Therefore, when the first gas phase port 11 is arranged on the top surface 10a and the supporting platform 20 is arranged on the bottom surface 10b, the first gas phase port 11 and the supporting platform 20 are arranged relative to each other, which is conducive to the deposition of the passivation material or the perovskite material, thereby improving the quality of the perovskite film.

[0068] The second gas phase port 12 is used to provide a solvent atmosphere to the main chamber 10. The solvent atmosphere is easy to diffuse and easy to be evenly filled in the main chamber, which can improve the uniformity of the atmosphere and is conducive to improving the stability of the optimization effect of the perovskite film processing equipment 100. In addition, the solvent atmosphere can provide an environmental atmosphere for the perovskite film, so that the formed perovskite film is in the solvent atmosphere, and the perovskite film is promoted to recrystallize under the action of the solvent, thereby improving the quality of the perovskite film.

[0069] In one embodiment, the first gas phase port 11 is used to provide the raw material of the liquid phase passivation material or the liquid phase perovskite material to the main chamber 10. Some raw materials of the passivation material or the perovskite material are not easy to change into the gas phase state, so the raw material of the liquid phase passivation material or the liquid phase perovskite material can be provided by atomizing the precursor solution of the liquid passivation material or the perovskite material into tiny droplets and then carrying them into the main chamber 10 through the carrier gas. At this time, the first gas phase port 11 is arranged on the top surface 10a, and the supporting platform 20 is arranged on the bottom surface 10b, which is conducive to the sedimentation of the raw material of the liquid phase passivation material or the liquid phase perovskite material, and can improve the deposition efficiency.

[0070] In one embodiment, the perovskite thin film processing equipment 100 further includes a third gas phase port 13 , which is disposed on the bottom surface 10 b or the top surface 10 a , and may also be disposed on other sides of the main chamber 10 to meet different application requirements.

[0071] In one embodiment, see Figure 1 In the perovskite thin film processing equipment 100, the main chamber 10 has a top surface 10a and a bottom surface 10b opposite to each other, the first gas phase port 11 and the second gas phase port 12 are arranged on the bottom surface 10b, and the supporting platform 20 is arranged on the top surface 10a.

[0072] The above arrangement is conducive to the substances from the gas phase port filling the entire main chamber, which is conducive to improving the uniformity of the atmosphere substances, thereby improving the quality of the processed product (perovskite film).

[0073] In one embodiment, the perovskite thin film processing equipment 100 further includes a third gas phase port 13 , which is disposed on the bottom surface 10 b or the top surface 10 a , and may also be disposed on other sides of the main chamber 10 to meet different application requirements.

[0074] When there are three or more gas phase ports, they can work simultaneously, or some of the gas phase ports can be selectively started. For example, if the main chamber 10 is a vacuum environment, inert gas is not needed to balance the gas pressure; if the main chamber 10 requires a certain atmosphere range, inert gas can be introduced to balance the gas pressure; if the main chamber 10 needs to speed up the introduction rate of a certain gas in the first gas phase port 11 or the second gas phase port 12, the gas can be introduced to speed up the introduction rate; if the main chamber 10 needs other solvent atmospheres other than the solvent atmosphere provided by the second gas phase port 12, other solvent atmospheres can be introduced.

[0075] In one embodiment, see Figures 3 to 5 The perovskite thin film processing equipment 100 also includes a sample introduction transition chamber 40 . Figure 3 A schematic diagram of a perovskite thin film processing device according to one or more embodiments of the present application is shown. Figure 5 for Figure 3 The cross-sectional structure diagram on the CC plane. The sample introduction transition chamber 40 is connected to the main chamber 10, and the sample introduction transition chamber 40 is separated from the main chamber 10 by a sample introduction transition chamber door 41. The sample introduction transition chamber 40 is used to pre-treat the sample; the conveying device 30 is also used to drive the carrier 20 to move between the main chamber 10 and the sample introduction transition chamber 40.

[0076] The sample feeding transition chamber 40 is used to provide a sample storage space before the sample enters the main chamber 10, and to pre-treat the sample in the sample feeding transition chamber 40, such as providing the sample with an atmosphere consistent with the atmosphere of the main chamber 10, which is conducive to maintaining the stability of the atmosphere of the main chamber 10, achieving continuous processing of the perovskite film, and improving production efficiency. The sample feeding transition chamber 40 can hold multiple layers of samples, so that the perovskite film processing equipment 100 can batch process perovskite film samples, speed up production rhythm, and improve production efficiency.

[0077] In one embodiment, the perovskite thin film processing equipment 100 also includes a sample-out transition chamber 50, which is connected to the main chamber 10, and the sample-out transition chamber 50 is separated from the main chamber 10 by a sample-out transition chamber door 51; the conveying device 30 is also used to drive the carrier 20 to move between the main chamber 10 and the sample-out transition chamber 50.

[0078] The sample exit transition chamber 50 is used to provide sample storage space after the sample is processed in the main chamber 10, and to provide the sample with an atmosphere similar to or consistent with the atmosphere of the main chamber 10, which is conducive to maintaining the stability of the atmosphere of the main chamber 10, achieving continuous processing of the perovskite film, and improving production efficiency. The sample that has been reacted can be transferred to the sample exit transition chamber 50 in time, and post-processing such as cooling can be carried out in the sample exit transition chamber 50 to free up the main chamber 10 for the next wave of reaction, achieving continuous processing of the perovskite film, and improving production efficiency. The sample exit transition chamber 50 can also hold multiple layers of samples.

[0079] In one embodiment, the sample outlet transition chamber 50 has an independent vacuum device for providing a vacuum environment for the sample outlet transition chamber 50 to facilitate atmosphere control. Specifically, the vacuum device can be a vacuum pump for evacuating the sample outlet transition chamber 50 to a vacuum state; or it can be used to evacuate and ventilate the sample outlet transition chamber 50 when the sample outlet transition chamber 50 needs to change its atmosphere.

[0080] Exemplarily, a working process of the perovskite thin film processing device 100 is:

[0081] The sample introduction transition chamber 40 stores sample 1 and sample 2, and maintains an atmosphere consistent with the main chamber 10. At this time, the sample introduction transition chamber door 41 is in a closed state, separating the sample introduction transition chamber 40 from the main chamber 10; next, sample 1 is placed on the carrier 20, the sample introduction transition chamber door 41 is opened, the conveying device 30 moves the carrier 20 carrying sample 1 to the main chamber 10, and the sample introduction transition chamber door 41 is closed; sample 1 is processed in the main chamber 10, and at this time, the sample introduction transition chamber door 41 and the sample output transition chamber door 51 are both in a closed state; after sample 1 is processed, the sample output transition chamber door 51 is opened, the conveying device 30 drives the carrier 20 carrying sample 1 to move to the sample output transition chamber 50, the sample output transition chamber door 51 is closed, and the sample output transition chamber 50 maintains an atmosphere consistent with the main chamber 10; next, sample 2 is placed on the carrier 20, and the above operations are repeated to complete the processing of sample 2. If there is a new sample 3 that needs to be processed, it can be pre-stored in the sample introduction transition chamber 40 during the sample 2 processing.

[0082] The atmosphere of the sample inlet transition chamber 40 and the sample outlet transition chamber 50 is consistent with that of the main chamber 10. When different samples are replaced, the atmosphere in the main chamber 10 can be maintained stable, thereby achieving continuous processing of samples, accelerating production rhythm, and improving production efficiency.

[0083] Furthermore, the atmosphere in the main chamber 10 is stable and uniform, which is beneficial to improving the accuracy of atmosphere control and improving the uniformity of perovskite film optimization and passivation effect.

[0084] Furthermore, the sample inlet transition chamber 40 can provide a pre-treatment space for the sample, including providing the sample with an atmosphere consistent with the atmosphere of the main chamber 10; the sample outlet transition chamber 50 can timely transfer the sample that has been reacted from the main chamber 10 to the sample outlet transition chamber 50, and perform post-treatment such as cooling to free up the main chamber 10 for the next wave of reaction. The provision of the sample inlet transition chamber 40 and the sample outlet transition chamber 50 is conducive to the continuous treatment of the perovskite film and improves production efficiency.

[0085] In one embodiment, the perovskite thin film processing equipment 100 also includes a ventilation device, which is connected to one or more of the main chamber 10, the sample introduction transition chamber 40, and the sample output transition chamber 50 to perform atmosphere treatment on one or more of the main chamber 10, the sample introduction transition chamber 40, and the sample output transition chamber 50.

[0086] The ventilation device may include multiple ventilation sub-devices, which are respectively connected to two or three of the main chamber 10, the sample injection transition chamber 40, and the sample output transition chamber 50, to independently control the exhaust and ventilation of the main chamber 10, the sample injection transition chamber 40, and the sample output transition chamber 50; it can also be connected to only one of the main chamber 10, the sample injection transition chamber 40, and the sample output transition chamber 50, as long as it can meet the application requirements.

[0087] In one embodiment, the ventilation device is a vacuum pump, which is used to provide a vacuum environment for one or more of the main chamber 10, the sample inlet transition chamber 40, and the sample outlet transition chamber 50 to assist in adjusting the atmosphere.

[0088] In one embodiment, the ventilation device is used to evacuate and ventilate one or more of the main chamber 10, the sample introduction transition chamber 40, and the sample output transition chamber 50 when one or more of the main chamber 10, the sample introduction transition chamber 40, and the sample output transition chamber 50 need to change the atmosphere.

[0089] The ventilation device can assist the first gas phase port and the second gas phase port in regulating the atmosphere of the main chamber, the sample inlet transition chamber, and the sample outlet transition chamber to improve work efficiency.

[0090] In one embodiment, the carrier 20 is adsorbed on the conveying device 30. Figure 5 The conveying device 30 passes through the main chamber 10, the sample feeding transition chamber 40 and the sample discharging transition chamber 50 of the perovskite thin film processing equipment 100, and can move the carrier 20 adsorbed on the conveying device 30 from the sample feeding transition chamber 40 to the main chamber 10, and then move from the main chamber 10 to the sample discharging transition chamber 50. The carrier 20 can be adsorbed on the conveying device 30 by mechanical vacuum adsorption, magnetic adsorption, mechanical fixation, etc.

[0091] like Figure 5 As shown, in one embodiment, the surface of the carrier 20 is a porous structure. The sample on the carrier 20 is adsorbed on the carrier 20 .

[0092] In one embodiment, the perovskite thin film processing equipment 100 further includes a concentration detector which is in communication with the main chamber 10 , and the concentration detector is used to detect the concentration of the gas phase substance in the main chamber 10 .

[0093] Specifically, the concentration detectors include: a passivation material atmosphere concentration detector, which is used to feedback the concentration of the passivation material atmosphere in the main chamber 10, thereby controlling the passivation material atmosphere concentration; a solvent atmosphere concentration detector, which is used to feedback the concentration of the solvent atmosphere in the main chamber 10, thereby controlling the solvent atmosphere concentration; a perovskite material concentration detector, which is used to feedback the concentration of the perovskite material in the main chamber 10; an inert gas concentration detector, which is used to feedback the concentration of the inert gas in the main chamber 10, thereby controlling the concentration of the inert gas in the main chamber 10 to adjust the atmosphere environment in the main chamber 10.

[0094] In one embodiment, the perovskite thin film processing apparatus 100 further includes a controller for adjusting the concentration of the gas phase substance.

[0095] Specifically, after receiving the concentration value fed back by the concentration detector, the controller adjusts the opening and closing and flow rate of the first gas phase port 11 , the second gas phase port 12 and the third gas phase port 13 according to the target concentration, thereby controlling the atmosphere in the main chamber 10 .

[0096] In one embodiment, the sample inlet transition chamber 40 and the sample outlet transition chamber 50 also include independent concentration detectors and controllers as described above, which are used to detect and control the concentration of gas-phase substances.

[0097] In one embodiment, the carrier 20 further includes a heating device.

[0098] The heating device is used to heat the sample on the carrier 20. In the preparation of the perovskite film, the heating device is used to anneal the perovskite film formed by vapor deposition, which can improve the quality of the perovskite film and thus improve the photoelectric conversion efficiency of the solar cell device.

[0099] As described above, the perovskite film processing equipment 100 of the present application has multiple functions of perovskite film preparation, perovskite film passivation and perovskite film optimization. While preparing or passivating the perovskite film, it can further optimize the crystallization process, improve the quality of perovskite crystals, and improve the performance of solar cell devices, which is conducive to speeding up the production cycle and improving production efficiency.

[0100] In one embodiment, the perovskite film processing apparatus 100 is used to prepare a perovskite film. The first gas phase port 11 is connected to the perovskite material generating device 111 for providing the perovskite material to the main chamber 10, and the second gas phase port 12 is connected to the solvent atmosphere generating device 120 for providing the solvent atmosphere to the main chamber 10.

[0101] The working process of the perovskite thin film processing device 100 is as follows:

[0102] Prepare the main chamber 10 environment.

[0103] The sample to be processed enters the sample introduction transition chamber 40 , and is pre-processed in the sample introduction transition chamber 40 . For example, the atmosphere of the sample introduction transition chamber 40 is kept consistent with that of the main chamber 10 .

[0104] The first batch of samples is transferred into the main chamber 10. The perovskite material is delivered to the main chamber 10 through the first gas phase port 11 to be deposited on the sample surface to form a perovskite film; at the same time, the solvent atmosphere is delivered to the main chamber 10 through the second gas phase port 12 to promote the recrystallization of the perovskite film.

[0105] During the reaction process of the main chamber 10 , the environment of the sample outlet transition chamber 50 is prepared at the same time, for example, an inert gas is introduced into the sample outlet transition chamber 50 to balance the air pressure with that of the main chamber 10 .

[0106] The first batch of samples is transferred into the sample outlet transition chamber 50 .

[0107] The second batch of samples is transferred into the main chamber 10 and the subsequent steps of the first batch of samples are repeated to achieve batch processing of samples.

[0108] In one embodiment, the perovskite film processing apparatus 100 is used to passivate the perovskite film. The first gas phase port 11 is connected to the passivation material atmosphere generator 110 for providing the passivation material to the main chamber 10, and the second gas phase port 12 is connected to the solvent atmosphere generator 120 for providing the solvent atmosphere to the main chamber 10.

[0109] The working process of the perovskite thin film processing device 100 is as follows:

[0110] The environment of the main chamber 10 is prepared, specifically, the main chamber 10 is evacuated.

[0111] The sample to be processed enters the sampling transition chamber 40 , where it is pre-processed. For example, the sampling transition chamber 40 is evacuated to make the atmosphere of the sampling transition chamber 40 consistent with that of the main chamber 10 .

[0112] The first batch of samples is transferred into the main chamber 10. A gas phase passivation material is delivered to the main chamber 10 through the first gas phase port 11 to deposit on the sample surface to passivate the perovskite film; at the same time, a solvent atmosphere is delivered to the main chamber 10 through the second gas phase port 12 to promote the recrystallization of the perovskite film.

[0113] During the reaction process of the main chamber 10, the atmosphere of the sample inlet transition chamber 40 is regulated, and an inert gas is provided to make the gas pressure of the sample inlet transition chamber 40 consistent with that of the main chamber 10. During the reaction process of the main chamber 10, the environment of the sample outlet transition chamber 50 is prepared at the same time, for example, an inert gas is provided to make the gas pressure of the sample outlet transition chamber 50 consistent with that of the main chamber 10.

[0114] The first batch of samples is transferred into the sample outlet transition chamber 50 .

[0115] The atmosphere of the main chamber 10 and the sample introduction transition chamber 40 is maintained.

[0116] The second batch of samples is transferred into the main chamber 10 and the subsequent steps of the first batch of samples are repeated to achieve batch processing of samples.

[0117] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail with reference to the embodiments and the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0118] Embodiment 1:

[0119] (1) Monitoring the air tightness of the main chamber 10, the sample inlet transition chamber 40, and the sample outlet transition chamber 50;

[0120] (2) Several samples to be processed enter the sample transition chamber 40, the sample base size is 30cm×30cm, please refer to Figure 6 , Figure 6 is a schematic diagram of a carrier platform and a sample of one or more embodiments of the present application. The carrier platform and the sample of Embodiment 1 are as follows: Figure 6 As shown;

[0121] (3) The first sample is transferred into the main chamber 10;

[0122] (4) The gas phase passivation material phenylethylamine hydroiodide enters the main chamber 10 through the first gas phase port 11 and is deposited on the sample surface at a deposition rate lower than 0.05 nm / s. The sample stage temperature is 100° C. to passivate the perovskite film;

[0123] (5) The N,N-dimethylformamide solvent atmosphere enters the main chamber 10 through the second gas phase port 12, and the atmosphere concentration in the main chamber 10 is balanced at 0.2 g / m 3 , promoting the recrystallization of perovskite films;

[0124] (6) Inert gas is introduced into the sample inlet transition chamber 40 and the sample outlet transition chamber 50 to balance the gas pressure of the sample inlet transition chamber 40 and the sample outlet transition chamber 50 with that of the main chamber 10;

[0125] (7) The samples are processed sequentially, and the solvent atmosphere in the main chamber 10 can remain unchanged, which greatly speeds up the sample surface optimization cycle.

[0126] Embodiment 2:

[0127] (1) Monitoring the air tightness of the main chamber 10, the sample inlet transition chamber 40, and the sample outlet transition chamber 50;

[0128] (2) Several samples to be processed enter the sample transition chamber 40, the sample base size is 30cm×30cm, please refer to Figure 6 , Figure 6 is a schematic diagram of a carrier platform and a sample of one or more embodiments of the present application, the carrier platform and the sample of Example 2 are as follows Figure 6 As shown;

[0129] (3) The main chamber 10, the sample inlet transition chamber 40 and the sample outlet transition chamber 50 are evacuated to a vacuum degree of less than 5×10 -4 Pa;

[0130] (4) The first sample is transferred into the main chamber 10;

[0131] (5) The N,N-dimethylformamide solvent atmosphere enters the main chamber 10 through the second gas phase port 12, and the atmosphere concentration in the main chamber 10 is balanced at 0.2 g / m 3 , the sample stage temperature was 100 °C to promote the recrystallization of the perovskite film, and the sample treatment time was 10 min;

[0132] (6) The samples are processed sequentially, and the solvent atmosphere in the main chamber 10 can remain unchanged, which greatly speeds up the sample surface optimization cycle.

[0133] Embodiment 3:

[0134] (1) Monitoring the air tightness of the main chamber 10, the sample inlet transition chamber 40, and the sample outlet transition chamber 50;

[0135] (2) Several samples to be processed enter the sample transition chamber 40. The sample base size is 2 cm×2 cm. 8×8 samples of 2 cm×2 cm are arranged on the carrier 20. Figure 7 , Figure 7 is a schematic diagram of a carrier platform and a sample of one or more embodiments of the present application. The carrier platform and the sample of Example 3 are as follows Figure 7 As shown;

[0136] (3) The first set of samples is transferred into the main chamber 10;

[0137] (4) The gas phase passivation material phenylethylamine hydroiodide enters the main chamber 10 through the first gas phase port 11 and is deposited on the sample surface at a deposition rate lower than 0.05 nm / s. The sample stage temperature is 100° C. to passivate the perovskite film;

[0138] (5) The N,N-dimethylformamide solvent atmosphere enters the main chamber 10 through the second gas phase port 12, and the atmosphere concentration in the main chamber 10 is balanced at 0.2 g / m 3 , promoting the recrystallization of perovskite films;

[0139] (6) Inert gas is introduced into the sample inlet transition chamber 40 and the sample outlet transition chamber 50 to balance the gas pressure of the sample inlet transition chamber 40 and the sample outlet transition chamber 50 with that of the main chamber 10;

[0140] (7) The samples are processed sequentially, and the solvent atmosphere in the main chamber 10 can remain unchanged, which greatly speeds up the sample surface optimization cycle.

[0141] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A perovskite thin film processing device, characterized in that: include: A main chamber, comprising at least a first gas phase port and a second gas phase port, wherein the first gas phase port and the second gas phase port are used to provide at least two different substances to the main chamber; A carrier, used for placing a sample, wherein the carrier is disposed on a side opposite to at least one of the first gas phase port or the second gas phase port; A conveying device is connected to the carrying platform and is used to drive the carrying platform to move in the main chamber.

2. The perovskite thin film processing equipment according to claim 1, characterized in that: include: a passivation material atmosphere generating device, connected to the first gas phase port, for providing the passivation material to the main chamber; A solvent atmosphere generating device is communicated with the second gas phase port and is used for providing a solvent atmosphere to the main chamber.

3. The perovskite thin film processing equipment according to claim 1, characterized in that: include: a perovskite material generating device, connected to the first gas phase port, for providing raw materials of the perovskite material to the main chamber; A solvent atmosphere generating device is communicated with the second gas phase port and is used for providing a solvent atmosphere to the main chamber.

4. The perovskite thin film processing equipment according to any one of claims 1 to 3, characterized in that: The perovskite film processing equipment also includes: A sample injection transition chamber is connected to the main chamber, the sample injection transition chamber is separated from the main chamber by a sample injection transition chamber door, and the sample injection transition chamber is used to pre-treat the sample; The conveying device is also used to drive the supporting platform to move between the main chamber and the sample introduction transition chamber.

5. The perovskite thin film processing equipment according to claim 4, characterized in that: The perovskite thin film processing equipment also includes: A sample outlet transition chamber is connected to the main chamber, the sample outlet transition chamber is separated from the main chamber by a sample outlet transition chamber door, and the sample outlet transition chamber is used for post-processing the sample; The conveying device is also used to drive the supporting platform to move between the main chamber and the sample outlet transition bin.

6. The perovskite thin film processing equipment according to claim 5, characterized in that: The perovskite thin film processing equipment also includes a ventilation device, which is connected to one or more of the main chamber, the sample introduction transition chamber, and the sample output transition chamber to perform atmosphere treatment on one or more of the main chamber, the sample introduction transition chamber, and the sample output transition chamber.

7. The perovskite thin film processing equipment according to claim 6, characterized in that: The main chamber further comprises a third gas phase port, and the third gas phase port is used to provide a third substance to the main chamber.

8. The perovskite thin film processing equipment according to claim 7, characterized in that: include: An inert gas generating device is communicated with the third gas phase port and is used for providing inert gas to the main chamber.

9. The perovskite thin film processing equipment according to any one of claims 1 to 3, characterized in that: The main chamber has a top surface and a bottom surface opposite to each other, the first gas phase port and the second gas phase port are arranged on the top surface, and the supporting platform is arranged on the bottom surface.

10. The perovskite thin film processing equipment according to any one of claims 1 to 3, characterized in that: The main chamber has a top surface and a bottom surface opposite to each other, the first gas phase port and the second gas phase port are arranged on the bottom surface, and the supporting platform is arranged on the top surface.

11. The perovskite thin film processing equipment according to any one of claims 1 to 3, characterized in that: The supporting platform further comprises a heating device.

12. The perovskite thin film processing equipment according to any one of claims 1 to 3, characterized in that: The perovskite film processing equipment also includes: A concentration detector is connected to the main chamber and is used to detect the concentration of the gas phase substance in the main chamber.

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